JPS5278387A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5278387A JPS5278387A JP15566675A JP15566675A JPS5278387A JP S5278387 A JPS5278387 A JP S5278387A JP 15566675 A JP15566675 A JP 15566675A JP 15566675 A JP15566675 A JP 15566675A JP S5278387 A JPS5278387 A JP S5278387A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- electrode
- emitter
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To facilitate aligning in subsequent processes and make possible highly accurate and easy determination of the relative position of each electrode and each region by determining the position of each electrode window for collector, emitter, base first.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15566675A JPS5278387A (en) | 1975-12-24 | 1975-12-24 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15566675A JPS5278387A (en) | 1975-12-24 | 1975-12-24 | Production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5278387A true JPS5278387A (en) | 1977-07-01 |
JPS5524698B2 JPS5524698B2 (en) | 1980-07-01 |
Family
ID=15610925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15566675A Granted JPS5278387A (en) | 1975-12-24 | 1975-12-24 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5278387A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5310979A (en) * | 1976-07-16 | 1978-01-31 | Mitsubishi Electric Corp | Semiconductor device and its production |
JPS5571036A (en) * | 1978-11-13 | 1980-05-28 | Motorola Inc | Method of manufacturing integrated circuit |
JPS55125643A (en) * | 1979-03-20 | 1980-09-27 | Fujitsu Ltd | Production of semiconductor device |
JPS5837961A (en) * | 1981-08-08 | 1983-03-05 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | Method of producing monolithic integrated circuit with at least one bipolar planar transistor |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57172250U (en) * | 1981-04-25 | 1982-10-29 |
-
1975
- 1975-12-24 JP JP15566675A patent/JPS5278387A/en active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5310979A (en) * | 1976-07-16 | 1978-01-31 | Mitsubishi Electric Corp | Semiconductor device and its production |
JPS5571036A (en) * | 1978-11-13 | 1980-05-28 | Motorola Inc | Method of manufacturing integrated circuit |
JPH0252422B2 (en) * | 1978-11-13 | 1990-11-13 | Motorola Inc | |
JPS55125643A (en) * | 1979-03-20 | 1980-09-27 | Fujitsu Ltd | Production of semiconductor device |
JPS5852339B2 (en) * | 1979-03-20 | 1983-11-22 | 富士通株式会社 | Manufacturing method of semiconductor device |
JPS5837961A (en) * | 1981-08-08 | 1983-03-05 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | Method of producing monolithic integrated circuit with at least one bipolar planar transistor |
JPH0361337B2 (en) * | 1981-08-08 | 1991-09-19 | Itt |
Also Published As
Publication number | Publication date |
---|---|
JPS5524698B2 (en) | 1980-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51111072A (en) | Photo etching method | |
JPS5278387A (en) | Production of semiconductor device | |
JPS5255871A (en) | Production of semiconductor | |
JPS5240063A (en) | Lead frame | |
JPS5244569A (en) | Process for production of semiconductor element | |
JPS51123074A (en) | Production process of fet | |
JPS5232186A (en) | Spherical surface processing device | |
JPS5228868A (en) | Semiconductor device | |
JPS51135474A (en) | To analyze a semiconductor device | |
JPS5410682A (en) | Production of semiconductor elements | |
JPS5253667A (en) | Production of semiconductor device | |
JPS5279664A (en) | Forming method for electrodes of semiconductor devices | |
JPS5353255A (en) | Manufacture of semiconductor device | |
JPS51123557A (en) | Impurity concentration measurement mask of semiconductor base | |
JPS5267271A (en) | Formation of through-hole onto semiconductor substrate | |
JPS5353254A (en) | Semiconductor device | |
JPS5377168A (en) | Production of semiconductor device | |
JPS53145580A (en) | Pnp transistor | |
JPS51138166A (en) | Production method of semiconductor device | |
JPS51114083A (en) | Construction of a semiconductor device | |
JPS51114084A (en) | Semiconductor device | |
JPS51145273A (en) | Forming method of mesa groove of semiconductor device | |
JPS51123558A (en) | Manufacturing method of plate semiconductor | |
JPS51137382A (en) | Measuring method for junction point within semi conductor wafer | |
JPS51112292A (en) | Semiconductor device |