JPS5247318A - Charge storage device - Google Patents
Charge storage deviceInfo
- Publication number
- JPS5247318A JPS5247318A JP51121214A JP12121476A JPS5247318A JP S5247318 A JPS5247318 A JP S5247318A JP 51121214 A JP51121214 A JP 51121214A JP 12121476 A JP12121476 A JP 12121476A JP S5247318 A JPS5247318 A JP S5247318A
- Authority
- JP
- Japan
- Prior art keywords
- storage device
- charge storage
- charge
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62075075A | 1975-10-08 | 1975-10-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5247318A true JPS5247318A (en) | 1977-04-15 |
JPS566629B2 JPS566629B2 (en) | 1981-02-12 |
Family
ID=24487240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51121214A Granted JPS5247318A (en) | 1975-10-08 | 1976-10-07 | Charge storage device |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5247318A (en) |
DE (1) | DE2644829A1 (en) |
FR (1) | FR2327644A1 (en) |
GB (1) | GB1554590A (en) |
NL (1) | NL7611106A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4228446A (en) * | 1979-05-10 | 1980-10-14 | Rca Corporation | Reduced blooming device having enhanced quantum efficiency |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3403284A (en) * | 1966-12-29 | 1968-09-24 | Bell Telephone Labor Inc | Target structure storage device using diode array |
FR1570707A (en) * | 1968-04-26 | 1969-06-13 | ||
AU1303470A (en) * | 1969-04-29 | 1971-09-30 | Rca Corporation | Charge storage device having a sensitivity enhancing layer containing a high concentration of non-mobile charge |
JPS5038450B1 (en) * | 1970-04-04 | 1975-12-10 | ||
JPS504485B1 (en) * | 1970-09-29 | 1975-02-20 | ||
US3755015A (en) * | 1971-12-10 | 1973-08-28 | Gen Electric | Anti-reflection coating for semiconductor diode array targets |
US3761762A (en) * | 1972-02-11 | 1973-09-25 | Rca Corp | Image intensifier camera tube having an improved electron bombardment induced conductivity camera tube target comprising a chromium buffer layer |
US3792197A (en) * | 1972-07-31 | 1974-02-12 | Bell Telephone Labor Inc | Solid-state diode array camera tube having electronic control of light sensitivity |
FR2230086A1 (en) * | 1973-05-14 | 1974-12-13 | Centre Nat Etd Spatiales | Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions |
-
1976
- 1976-09-28 GB GB4022876A patent/GB1554590A/en not_active Expired
- 1976-10-05 FR FR7629862A patent/FR2327644A1/en active Granted
- 1976-10-05 DE DE19762644829 patent/DE2644829A1/en not_active Withdrawn
- 1976-10-07 NL NL7611106A patent/NL7611106A/en not_active Application Discontinuation
- 1976-10-07 JP JP51121214A patent/JPS5247318A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS566629B2 (en) | 1981-02-12 |
DE2644829A1 (en) | 1977-04-21 |
GB1554590A (en) | 1979-10-24 |
FR2327644B1 (en) | 1982-07-16 |
NL7611106A (en) | 1977-04-13 |
FR2327644A1 (en) | 1977-05-06 |
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