FR2230086A1 - Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions - Google Patents
Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ionsInfo
- Publication number
- FR2230086A1 FR2230086A1 FR7317345A FR7317345A FR2230086A1 FR 2230086 A1 FR2230086 A1 FR 2230086A1 FR 7317345 A FR7317345 A FR 7317345A FR 7317345 A FR7317345 A FR 7317345A FR 2230086 A1 FR2230086 A1 FR 2230086A1
- Authority
- FR
- France
- Prior art keywords
- obtd
- substrate
- high efficiency
- type
- solar cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 6
- 150000002500 ions Chemical class 0.000 title abstract 3
- 239000000377 silicon dioxide Substances 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 238000001429 visible spectrum Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the metal-insulator-semiconductor type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
A cell with its absorption band in the visible spectrum, comprising a p- or n- doped substrate contg., on the window side, a grid of the opposite type, i.e. n- or p-, and covered with a transparent dielectric. The transparent dielectric is charged to a small part of its total height by trapped ions which are positive or negative when the substrate is p- or n- type respectively, the ion-density being sufficient to cause an inversion at the substrate surface. The pref. substrate is Si, which, if p-type, is covered with SiO2 doped with e.g. Mg++, Ca++, Zn++; if the Si is n-type, the SiO2 is doped with Br-, Cl-, OH- or I-. The advantage, esp. for space-vehicles, is the min. efficiency of 17%, as compared with the low efficiency of 7-11% obtd. from known cells.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7317345A FR2230086A1 (en) | 1973-05-14 | 1973-05-14 | Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7317345A FR2230086A1 (en) | 1973-05-14 | 1973-05-14 | Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2230086A1 true FR2230086A1 (en) | 1974-12-13 |
FR2230086B1 FR2230086B1 (en) | 1977-04-29 |
Family
ID=9119276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7317345A Granted FR2230086A1 (en) | 1973-05-14 | 1973-05-14 | Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2230086A1 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2644829A1 (en) * | 1975-10-08 | 1977-04-21 | Rca Corp | SEMI-CONDUCTOR ADAPTER |
US4070689A (en) * | 1975-12-31 | 1978-01-24 | Motorola Inc. | Semiconductor solar energy device |
EP0009125A1 (en) * | 1978-09-19 | 1980-04-02 | Siemens Aktiengesellschaft | Semiconductor component with passivating protection layer |
DE2846096A1 (en) * | 1978-10-23 | 1980-04-24 | Rudolf Dipl Phys Dr Hezel | Solar cell with double insulating layer - of silicon oxide produced at low temp. and different insulant to decouple fixed surface charge |
FR2440081A1 (en) * | 1978-10-23 | 1980-05-23 | Hezel Rudolf | SOLAR CELL IN SEMICONDUCTOR MATERIAL |
US4404422A (en) * | 1980-09-26 | 1983-09-13 | Unisearch Limited | High efficiency solar cell structure |
WO1994028589A1 (en) * | 1993-06-01 | 1994-12-08 | Electric Power Research Institute | Advanced solar cell |
EP3583630A4 (en) * | 2017-02-15 | 2020-12-30 | ElFys Oy | Semiconductor structures and manufacturing the same |
-
1973
- 1973-05-14 FR FR7317345A patent/FR2230086A1/en active Granted
Non-Patent Citations (1)
Title |
---|
NEANT * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2644829A1 (en) * | 1975-10-08 | 1977-04-21 | Rca Corp | SEMI-CONDUCTOR ADAPTER |
US4070689A (en) * | 1975-12-31 | 1978-01-24 | Motorola Inc. | Semiconductor solar energy device |
EP0009125A1 (en) * | 1978-09-19 | 1980-04-02 | Siemens Aktiengesellschaft | Semiconductor component with passivating protection layer |
DE2846096A1 (en) * | 1978-10-23 | 1980-04-24 | Rudolf Dipl Phys Dr Hezel | Solar cell with double insulating layer - of silicon oxide produced at low temp. and different insulant to decouple fixed surface charge |
FR2440081A1 (en) * | 1978-10-23 | 1980-05-23 | Hezel Rudolf | SOLAR CELL IN SEMICONDUCTOR MATERIAL |
US4404422A (en) * | 1980-09-26 | 1983-09-13 | Unisearch Limited | High efficiency solar cell structure |
WO1994028589A1 (en) * | 1993-06-01 | 1994-12-08 | Electric Power Research Institute | Advanced solar cell |
EP3583630A4 (en) * | 2017-02-15 | 2020-12-30 | ElFys Oy | Semiconductor structures and manufacturing the same |
US10950737B2 (en) | 2017-02-15 | 2021-03-16 | Elfys Oy | Semiconductor structures and manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
FR2230086B1 (en) | 1977-04-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |