JPS5244188A - Semiconductor integrated circuit and process for production of the sam e - Google Patents
Semiconductor integrated circuit and process for production of the sam eInfo
- Publication number
- JPS5244188A JPS5244188A JP11977175A JP11977175A JPS5244188A JP S5244188 A JPS5244188 A JP S5244188A JP 11977175 A JP11977175 A JP 11977175A JP 11977175 A JP11977175 A JP 11977175A JP S5244188 A JPS5244188 A JP S5244188A
- Authority
- JP
- Japan
- Prior art keywords
- sam
- production
- integrated circuit
- semiconductor integrated
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000006735 deficit Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To simultaneously form an n-channel MOSFET and bipolar transistor on one substrate by using anisotropic etching, and prevent impairment of their characteristics.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11977175A JPS5244188A (en) | 1975-10-06 | 1975-10-06 | Semiconductor integrated circuit and process for production of the sam e |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11977175A JPS5244188A (en) | 1975-10-06 | 1975-10-06 | Semiconductor integrated circuit and process for production of the sam e |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5244188A true JPS5244188A (en) | 1977-04-06 |
Family
ID=14769787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11977175A Pending JPS5244188A (en) | 1975-10-06 | 1975-10-06 | Semiconductor integrated circuit and process for production of the sam e |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5244188A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53143183A (en) * | 1977-05-20 | 1978-12-13 | Hitachi Ltd | Semicondutor integrated circuit device and production of the same |
JPS564269A (en) * | 1979-06-25 | 1981-01-17 | Hitachi Ltd | Bipolar cmos semiconductor device and manufacture thereof |
JPS6363478A (en) * | 1986-09-03 | 1988-03-19 | 株式会社タツノ・メカトロニクス | Balling area |
JPH04117975A (en) * | 1990-09-06 | 1992-04-17 | Tele Syst:Yugen | Bowling alley management system |
-
1975
- 1975-10-06 JP JP11977175A patent/JPS5244188A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53143183A (en) * | 1977-05-20 | 1978-12-13 | Hitachi Ltd | Semicondutor integrated circuit device and production of the same |
JPS564269A (en) * | 1979-06-25 | 1981-01-17 | Hitachi Ltd | Bipolar cmos semiconductor device and manufacture thereof |
JPS6363478A (en) * | 1986-09-03 | 1988-03-19 | 株式会社タツノ・メカトロニクス | Balling area |
JPH04117975A (en) * | 1990-09-06 | 1992-04-17 | Tele Syst:Yugen | Bowling alley management system |
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