Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP11097775ApriorityCriticalpatent/JPS5235981A/en
Publication of JPS5235981ApublicationCriticalpatent/JPS5235981A/en
PURPOSE: To make samller the distance of diffused and buried layer formed on the semiconductor device by using composite films with different etching characteristics.
COPYRIGHT: (C)1977,JPO&Japio
JP11097775A1975-09-161975-09-16Manufacturing method of semiconductor device
PendingJPS5235981A
(en)