JPS5210672A - Semi-conductor device - Google Patents
Semi-conductor deviceInfo
- Publication number
- JPS5210672A JPS5210672A JP8685075A JP8685075A JPS5210672A JP S5210672 A JPS5210672 A JP S5210672A JP 8685075 A JP8685075 A JP 8685075A JP 8685075 A JP8685075 A JP 8685075A JP S5210672 A JPS5210672 A JP S5210672A
- Authority
- JP
- Japan
- Prior art keywords
- conductor device
- semi
- metal
- elctrode
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:A metal with high melting point, having low sheet resistance which is used for the elctrode of the metal film gate or metal for wiring, etc., to obtain a temperature-proof oxidized semi-conductor device such as MOSFET which has high-speed action.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8685075A JPS5210672A (en) | 1975-07-15 | 1975-07-15 | Semi-conductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8685075A JPS5210672A (en) | 1975-07-15 | 1975-07-15 | Semi-conductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5210672A true JPS5210672A (en) | 1977-01-27 |
Family
ID=13898276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8685075A Pending JPS5210672A (en) | 1975-07-15 | 1975-07-15 | Semi-conductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5210672A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56165338A (en) * | 1980-05-23 | 1981-12-18 | Nec Corp | Semiconductor device and manufacture thereof |
JPS5736393U (en) * | 1980-08-11 | 1982-02-25 | ||
JPS5737856A (en) * | 1980-08-20 | 1982-03-02 | Fujitsu Ltd | Semiconductor device |
JPS58161344A (en) * | 1982-03-19 | 1983-09-24 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
US4712291A (en) * | 1985-06-06 | 1987-12-15 | The United States Of America As Represented By The Secretary Of The Air Force | Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs |
JPS6419721A (en) * | 1988-03-25 | 1989-01-23 | Seiko Epson Corp | Integrated circuit |
JPS6419720A (en) * | 1988-03-25 | 1989-01-23 | Seiko Epson Corp | Integrated circuit |
US5559351A (en) * | 1993-07-13 | 1996-09-24 | Nippon Steel Corporation | Semiconductor element having Cr in silicon dioxide |
US6638816B2 (en) | 2000-03-29 | 2003-10-28 | Nec Electronics Corporation | Integrated circuit device with MIM capacitance circuit and method of manufacturing the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49110276A (en) * | 1973-02-21 | 1974-10-21 |
-
1975
- 1975-07-15 JP JP8685075A patent/JPS5210672A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49110276A (en) * | 1973-02-21 | 1974-10-21 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56165338A (en) * | 1980-05-23 | 1981-12-18 | Nec Corp | Semiconductor device and manufacture thereof |
JPS639658B2 (en) * | 1980-05-23 | 1988-03-01 | Nippon Electric Co | |
JPS5736393U (en) * | 1980-08-11 | 1982-02-25 | ||
JPS6024959Y2 (en) * | 1980-08-11 | 1985-07-26 | 株式会社クボタ | movable vane pump |
JPS5737856A (en) * | 1980-08-20 | 1982-03-02 | Fujitsu Ltd | Semiconductor device |
JPS58161344A (en) * | 1982-03-19 | 1983-09-24 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH041497B2 (en) * | 1982-03-19 | 1992-01-13 | Oki Electric Ind Co Ltd | |
US4712291A (en) * | 1985-06-06 | 1987-12-15 | The United States Of America As Represented By The Secretary Of The Air Force | Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs |
JPS6419721A (en) * | 1988-03-25 | 1989-01-23 | Seiko Epson Corp | Integrated circuit |
JPS6419720A (en) * | 1988-03-25 | 1989-01-23 | Seiko Epson Corp | Integrated circuit |
US5559351A (en) * | 1993-07-13 | 1996-09-24 | Nippon Steel Corporation | Semiconductor element having Cr in silicon dioxide |
US6638816B2 (en) | 2000-03-29 | 2003-10-28 | Nec Electronics Corporation | Integrated circuit device with MIM capacitance circuit and method of manufacturing the same |
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