JPS5169369A - - Google Patents
Info
- Publication number
- JPS5169369A JPS5169369A JP50123885A JP12388575A JPS5169369A JP S5169369 A JPS5169369 A JP S5169369A JP 50123885 A JP50123885 A JP 50123885A JP 12388575 A JP12388575 A JP 12388575A JP S5169369 A JPS5169369 A JP S5169369A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Structural Engineering (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7435151A FR2288392A1 (fr) | 1974-10-18 | 1974-10-18 | Procede de realisation de dispositifs semiconducteurs |
FR7435152A FR2288138A1 (fr) | 1974-10-18 | 1974-10-18 | Procede d'attaque de l'alumine |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5169369A true JPS5169369A (ja) | 1976-06-15 |
JPS5640492B2 JPS5640492B2 (ja) | 1981-09-21 |
Family
ID=26218562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12388575A Expired JPS5640492B2 (ja) | 1974-10-18 | 1975-10-16 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5640492B2 (ja) |
BR (1) | BR7506737A (ja) |
DE (1) | DE2546316C2 (ja) |
GB (1) | GB1526425A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59184532A (ja) * | 1983-04-05 | 1984-10-19 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
WO2019151090A1 (ja) * | 2018-01-30 | 2019-08-08 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置およびエッチング液 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3048083C2 (de) * | 1980-12-19 | 1983-09-29 | Ludwig 8900 Augsburg Fahrmbacher-Lutz | Verfahren zur chemischen Entfernung von Oxidschichten von Gegenständen aus Titan oder Titanlegierungen |
WO1999046811A1 (de) * | 1998-03-10 | 1999-09-16 | Scacco Electronics Consulting | Selektives ätzen von siliciumnitrid mit einem nasschemischen ver fahren |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4941716A (ja) * | 1972-08-25 | 1974-04-19 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2828193A (en) * | 1954-08-09 | 1958-03-25 | Turco Products Inc | Method for rejuvenation of aluminum treating solutions |
-
1975
- 1975-10-15 BR BR7506737*A patent/BR7506737A/pt unknown
- 1975-10-15 GB GB42222/75A patent/GB1526425A/en not_active Expired
- 1975-10-16 DE DE2546316A patent/DE2546316C2/de not_active Expired
- 1975-10-16 JP JP12388575A patent/JPS5640492B2/ja not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4941716A (ja) * | 1972-08-25 | 1974-04-19 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59184532A (ja) * | 1983-04-05 | 1984-10-19 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
WO2019151090A1 (ja) * | 2018-01-30 | 2019-08-08 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置およびエッチング液 |
JPWO2019151090A1 (ja) * | 2018-01-30 | 2021-01-07 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置およびエッチング液 |
US11306249B2 (en) | 2018-01-30 | 2022-04-19 | Tokyo Electron Limited | Substrate processing method, substrate processing device and etching liquid |
Also Published As
Publication number | Publication date |
---|---|
BR7506737A (pt) | 1976-08-17 |
GB1526425A (en) | 1978-09-27 |
DE2546316A1 (de) | 1976-04-22 |
DE2546316C2 (de) | 1982-11-11 |
JPS5640492B2 (ja) | 1981-09-21 |