JPS5145984A - - Google Patents
Info
- Publication number
- JPS5145984A JPS5145984A JP50098444A JP9844475A JPS5145984A JP S5145984 A JPS5145984 A JP S5145984A JP 50098444 A JP50098444 A JP 50098444A JP 9844475 A JP9844475 A JP 9844475A JP S5145984 A JPS5145984 A JP S5145984A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0664—Vertical bipolar transistor in combination with diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49877474A | 1974-08-19 | 1974-08-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5145984A true JPS5145984A (xx) | 1976-04-19 |
Family
ID=23982440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50098444A Pending JPS5145984A (xx) | 1974-08-19 | 1975-08-12 |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5145984A (xx) |
AU (1) | AU8392475A (xx) |
BE (1) | BE832491A (xx) |
DE (1) | DE2535864A1 (xx) |
FR (1) | FR2282721A1 (xx) |
GB (1) | GB1502122A (xx) |
IN (1) | IN141922B (xx) |
NL (1) | NL7509804A (xx) |
SE (1) | SE7509023L (xx) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0531725Y2 (xx) * | 1987-10-28 | 1993-08-16 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2023340B (en) * | 1978-06-01 | 1982-09-02 | Mitsubishi Electric Corp | Integrated circuits |
FR2458146A1 (fr) * | 1979-05-29 | 1980-12-26 | Thomson Csf | Structure integree comportant un transistor et trois diodes antisaturation |
FR2458904A1 (fr) * | 1979-06-12 | 1981-01-02 | Thomson Csf | Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation |
JPS62214660A (ja) * | 1986-03-17 | 1987-09-21 | Toshiba Corp | 半導体装置 |
FR2677171B1 (fr) * | 1991-05-31 | 1994-01-28 | Sgs Thomson Microelectronics Sa | Transistor de gain en courant predetermine dans un circuit integre bipolaire. |
EP0632502B1 (en) * | 1993-06-28 | 1999-03-17 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Bipolar power transistor with high collector breakdown voltage and related manufacturing process |
KR100256169B1 (ko) * | 1996-01-16 | 2000-05-15 | 다니구찌 이찌로오, 기타오카 다카시 | 반도체 장치 및 그 제조방법 |
US6566217B1 (en) | 1996-01-16 | 2003-05-20 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing process for semiconductor device |
-
1975
- 1975-07-11 IN IN1354/CAL/75A patent/IN141922B/en unknown
- 1975-08-12 JP JP50098444A patent/JPS5145984A/ja active Pending
- 1975-08-12 DE DE19752535864 patent/DE2535864A1/de active Pending
- 1975-08-12 GB GB33548/75A patent/GB1502122A/en not_active Expired
- 1975-08-12 SE SE7509023A patent/SE7509023L/xx unknown
- 1975-08-13 AU AU83924/75A patent/AU8392475A/en not_active Expired
- 1975-08-14 BE BE7000690A patent/BE832491A/xx unknown
- 1975-08-18 FR FR7525542A patent/FR2282721A1/fr not_active Withdrawn
- 1975-08-18 NL NL7509804A patent/NL7509804A/xx not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0531725Y2 (xx) * | 1987-10-28 | 1993-08-16 |
Also Published As
Publication number | Publication date |
---|---|
AU8392475A (en) | 1977-02-17 |
BE832491A (nl) | 1975-12-01 |
GB1502122A (en) | 1978-02-22 |
NL7509804A (nl) | 1976-02-23 |
FR2282721A1 (fr) | 1976-03-19 |
IN141922B (xx) | 1977-05-07 |
DE2535864A1 (de) | 1976-03-04 |
SE7509023L (sv) | 1976-02-20 |