AU8392475A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- AU8392475A AU8392475A AU83924/75A AU8392475A AU8392475A AU 8392475 A AU8392475 A AU 8392475A AU 83924/75 A AU83924/75 A AU 83924/75A AU 8392475 A AU8392475 A AU 8392475A AU 8392475 A AU8392475 A AU 8392475A
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0664—Vertical bipolar transistor in combination with diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49877474A | 1974-08-19 | 1974-08-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
AU8392475A true AU8392475A (en) | 1977-02-17 |
Family
ID=23982440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU83924/75A Expired AU8392475A (en) | 1974-08-19 | 1975-08-13 | Semiconductor devices |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5145984A (en) |
AU (1) | AU8392475A (en) |
BE (1) | BE832491A (en) |
DE (1) | DE2535864A1 (en) |
FR (1) | FR2282721A1 (en) |
GB (1) | GB1502122A (en) |
IN (1) | IN141922B (en) |
NL (1) | NL7509804A (en) |
SE (1) | SE7509023L (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2023340B (en) * | 1978-06-01 | 1982-09-02 | Mitsubishi Electric Corp | Integrated circuits |
FR2458146A1 (en) * | 1979-05-29 | 1980-12-26 | Thomson Csf | INTEGRATED STRUCTURE COMPRISING A TRANSISTOR AND THREE ANTISATURATION DIODES |
FR2458904A1 (en) * | 1979-06-12 | 1981-01-02 | Thomson Csf | MONOLITHIC INTEGRATED CIRCUIT EQUIVALENT TO A TRANSISTOR ASSOCIATED WITH THREE ANTI-SATURATION DIODES |
JPS62214660A (en) * | 1986-03-17 | 1987-09-21 | Toshiba Corp | Semiconductor device |
JPH0531725Y2 (en) * | 1987-10-28 | 1993-08-16 | ||
FR2677171B1 (en) * | 1991-05-31 | 1994-01-28 | Sgs Thomson Microelectronics Sa | PREDETERMINED CURRENT GAIN TRANSISTOR IN A BIPOLAR INTEGRATED CIRCUIT. |
EP0632502B1 (en) * | 1993-06-28 | 1999-03-17 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Bipolar power transistor with high collector breakdown voltage and related manufacturing process |
US6566217B1 (en) | 1996-01-16 | 2003-05-20 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing process for semiconductor device |
KR100256169B1 (en) * | 1996-01-16 | 2000-05-15 | 다니구찌 이찌로오, 기타오카 다카시 | Semiconductor device and method for manufacturing the same |
-
1975
- 1975-07-11 IN IN1354/CAL/75A patent/IN141922B/en unknown
- 1975-08-12 JP JP50098444A patent/JPS5145984A/ja active Pending
- 1975-08-12 GB GB33548/75A patent/GB1502122A/en not_active Expired
- 1975-08-12 SE SE7509023A patent/SE7509023L/en unknown
- 1975-08-12 DE DE19752535864 patent/DE2535864A1/en active Pending
- 1975-08-13 AU AU83924/75A patent/AU8392475A/en not_active Expired
- 1975-08-14 BE BE7000690A patent/BE832491A/en unknown
- 1975-08-18 FR FR7525542A patent/FR2282721A1/en not_active Withdrawn
- 1975-08-18 NL NL7509804A patent/NL7509804A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPS5145984A (en) | 1976-04-19 |
FR2282721A1 (en) | 1976-03-19 |
DE2535864A1 (en) | 1976-03-04 |
IN141922B (en) | 1977-05-07 |
BE832491A (en) | 1975-12-01 |
SE7509023L (en) | 1976-02-20 |
GB1502122A (en) | 1978-02-22 |
NL7509804A (en) | 1976-02-23 |
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