AU8392475A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
AU8392475A
AU8392475A AU83924/75A AU8392475A AU8392475A AU 8392475 A AU8392475 A AU 8392475A AU 83924/75 A AU83924/75 A AU 83924/75A AU 8392475 A AU8392475 A AU 8392475A AU 8392475 A AU8392475 A AU 8392475A
Authority
AU
Australia
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU83924/75A
Inventor
Carl Franklin Wheatley Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of AU8392475A publication Critical patent/AU8392475A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004Base region of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0664Vertical bipolar transistor in combination with diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
AU83924/75A 1974-08-19 1975-08-13 Semiconductor devices Expired AU8392475A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49877474A 1974-08-19 1974-08-19

Publications (1)

Publication Number Publication Date
AU8392475A true AU8392475A (en) 1977-02-17

Family

ID=23982440

Family Applications (1)

Application Number Title Priority Date Filing Date
AU83924/75A Expired AU8392475A (en) 1974-08-19 1975-08-13 Semiconductor devices

Country Status (9)

Country Link
JP (1) JPS5145984A (en)
AU (1) AU8392475A (en)
BE (1) BE832491A (en)
DE (1) DE2535864A1 (en)
FR (1) FR2282721A1 (en)
GB (1) GB1502122A (en)
IN (1) IN141922B (en)
NL (1) NL7509804A (en)
SE (1) SE7509023L (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2023340B (en) * 1978-06-01 1982-09-02 Mitsubishi Electric Corp Integrated circuits
FR2458146A1 (en) * 1979-05-29 1980-12-26 Thomson Csf INTEGRATED STRUCTURE COMPRISING A TRANSISTOR AND THREE ANTISATURATION DIODES
FR2458904A1 (en) * 1979-06-12 1981-01-02 Thomson Csf MONOLITHIC INTEGRATED CIRCUIT EQUIVALENT TO A TRANSISTOR ASSOCIATED WITH THREE ANTI-SATURATION DIODES
JPS62214660A (en) * 1986-03-17 1987-09-21 Toshiba Corp Semiconductor device
JPH0531725Y2 (en) * 1987-10-28 1993-08-16
FR2677171B1 (en) * 1991-05-31 1994-01-28 Sgs Thomson Microelectronics Sa PREDETERMINED CURRENT GAIN TRANSISTOR IN A BIPOLAR INTEGRATED CIRCUIT.
EP0632502B1 (en) * 1993-06-28 1999-03-17 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Bipolar power transistor with high collector breakdown voltage and related manufacturing process
US6566217B1 (en) 1996-01-16 2003-05-20 Mitsubishi Denki Kabushiki Kaisha Manufacturing process for semiconductor device
KR100256169B1 (en) * 1996-01-16 2000-05-15 다니구찌 이찌로오, 기타오카 다카시 Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
JPS5145984A (en) 1976-04-19
FR2282721A1 (en) 1976-03-19
DE2535864A1 (en) 1976-03-04
IN141922B (en) 1977-05-07
BE832491A (en) 1975-12-01
SE7509023L (en) 1976-02-20
GB1502122A (en) 1978-02-22
NL7509804A (en) 1976-02-23

Similar Documents

Publication Publication Date Title
JPS54122985A (en) Semiconductor
GB1542651A (en) Semiconductor devices
YU40887B (en) Claning device
GR58532B (en) Device
AU7731575A (en) Heterojunction devices
ZA766145B (en) Semiconductor devices
GB1548877A (en) Semiconductor devices
GB1506560A (en) Device
JPS57136344A (en) Device used for producing semiconductor device
GB1552161A (en) Semiconductor devices
HK18081A (en) Semiconductor switch
AU6912674A (en) Semiconductor devices
AU8392475A (en) Semiconductor devices
CA1025560A (en) Semiconductor device
GB1550834A (en) Semiconductor devices
GB1525122A (en) Semiconductor mounts
JPS5141961A (en) Handotai shusekikairosochoriidofureemu
IL46896A0 (en) Semiconductive device
YU37019B (en) Air-regenerating device
AU7882575A (en) Valve devices
CA1016664A (en) Semiconductor device
JPS5118856A (en) Maikuroha ic yokibanno seizohoho
JPS5157461A (en) Saabisuerianai gaino hanteihyojihoshiki
JPS5130203A (en) Koon koatsunoheriumugasuokanetsugentosuru suijokikaishitsuki
IL47059A0 (en) Semiconductor devices