JPS5135829B2 - - Google Patents

Info

Publication number
JPS5135829B2
JPS5135829B2 JP48116714A JP11671473A JPS5135829B2 JP S5135829 B2 JPS5135829 B2 JP S5135829B2 JP 48116714 A JP48116714 A JP 48116714A JP 11671473 A JP11671473 A JP 11671473A JP S5135829 B2 JPS5135829 B2 JP S5135829B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48116714A
Other versions
JPS4982275A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4982275A publication Critical patent/JPS4982275A/ja
Publication of JPS5135829B2 publication Critical patent/JPS5135829B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/073—Hollow body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S264/00—Plastic and nonmetallic article shaping or treating: processes
    • Y10S264/57—Processes of forming layered products

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP48116714A 1972-10-31 1973-10-17 Expired JPS5135829B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2253411A DE2253411C3 (de) 1972-10-31 1972-10-31 Verfahren zum Herstellen von aus Halbleitermaterial bestehenden, direkt beheizbaren Hohlkörpern für Diffusionszwecke

Publications (2)

Publication Number Publication Date
JPS4982275A JPS4982275A (ja) 1974-08-08
JPS5135829B2 true JPS5135829B2 (ja) 1976-10-05

Family

ID=5860540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48116714A Expired JPS5135829B2 (ja) 1972-10-31 1973-10-17

Country Status (9)

Country Link
US (1) US3899557A (ja)
JP (1) JPS5135829B2 (ja)
BE (1) BE806822A (ja)
DE (1) DE2253411C3 (ja)
FR (1) FR2204459B1 (ja)
GB (1) GB1406956A (ja)
IT (1) IT998996B (ja)
NL (1) NL7311932A (ja)
SE (1) SE396700B (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2554399C3 (de) * 1975-12-03 1979-09-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von aus Silicium oder Siliciumcarbid bestehenden, direkt-beheizbaren Rohren
DE2618398C3 (de) * 1976-04-27 1978-10-19 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur kontinuierlichen Herstellung von Siliciumstäben oder -rohren
US4253863A (en) * 1977-06-07 1981-03-03 International Telephone And Telegraph Corporation Apparatus for mass producing fiber optic preforms and optic fibers
US4276072A (en) * 1977-06-07 1981-06-30 International Telephone And Telegraph Corporation Optical fiber fabrication
DE2843261C2 (de) * 1978-10-04 1983-07-28 Heraeus Quarzschmelze Gmbh, 6450 Hanau Verfahren zum Wärmebehandeln von Halbleiterbauelementen
JPS5842126B2 (ja) * 1980-10-31 1983-09-17 鐘淵化学工業株式会社 アモルファスシリコンの製造方法
US4981102A (en) * 1984-04-12 1991-01-01 Ethyl Corporation Chemical vapor deposition reactor and process
DE3544812A1 (de) * 1985-12-18 1987-06-25 Heraeus Schott Quarzschmelze Doppelwand-quarzglasrohr fuer die durchfuehrung halbleitertechnologischer prozesse
US5466480A (en) * 1993-11-12 1995-11-14 University Of Florida Method for making an NMR coil
US6464912B1 (en) 1999-01-06 2002-10-15 Cvd, Incorporated Method for producing near-net shape free standing articles by chemical vapor deposition
DE102007041803A1 (de) * 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab
DE102016222945A1 (de) * 2016-11-21 2018-05-24 Volkswagen Aktiengesellschaft Anordnung von zylinderförmigen Bauteilen in einer Beschichtungskammer zur Beschichtung der Innenflächen der zylinderförmigen Bauteile mittels Gasphasenabscheidung und Verfahren zur Beschichtung der Innenflächen von zylinderförmigen Bauteilen

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3438810A (en) * 1966-04-04 1969-04-15 Motorola Inc Method of making silicon
DE2117933A1 (de) * 1971-04-14 1972-10-19 Siemens Ag Verfahren zum Herstellen von Hohlkörpern aus Halbleitermaterial von beliebiger Länge

Also Published As

Publication number Publication date
IT998996B (it) 1976-02-20
NL7311932A (ja) 1974-05-02
FR2204459B1 (ja) 1977-03-11
US3899557A (en) 1975-08-12
FR2204459A1 (ja) 1974-05-24
BE806822A (fr) 1974-02-15
DE2253411A1 (de) 1974-05-02
DE2253411B2 (de) 1977-10-06
SE396700B (sv) 1977-10-03
DE2253411C3 (de) 1978-06-08
JPS4982275A (ja) 1974-08-08
GB1406956A (en) 1975-10-01

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