JPS51142499A - Crystal growing method - Google Patents

Crystal growing method

Info

Publication number
JPS51142499A
JPS51142499A JP6653775A JP6653775A JPS51142499A JP S51142499 A JPS51142499 A JP S51142499A JP 6653775 A JP6653775 A JP 6653775A JP 6653775 A JP6653775 A JP 6653775A JP S51142499 A JPS51142499 A JP S51142499A
Authority
JP
Japan
Prior art keywords
crystal growing
growing method
high efficiency
smooth surface
luminescent diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6653775A
Other languages
Japanese (ja)
Inventor
Takashi Kajimura
Masahiko Kogirima
Motonao Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6653775A priority Critical patent/JPS51142499A/en
Publication of JPS51142499A publication Critical patent/JPS51142499A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To grow GaP crystal which has smooth surface with low etch pits density and is high efficiency luminescent diode.
COPYRIGHT: (C)1976,JPO&Japio
JP6653775A 1975-06-04 1975-06-04 Crystal growing method Pending JPS51142499A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6653775A JPS51142499A (en) 1975-06-04 1975-06-04 Crystal growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6653775A JPS51142499A (en) 1975-06-04 1975-06-04 Crystal growing method

Publications (1)

Publication Number Publication Date
JPS51142499A true JPS51142499A (en) 1976-12-08

Family

ID=13318734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6653775A Pending JPS51142499A (en) 1975-06-04 1975-06-04 Crystal growing method

Country Status (1)

Country Link
JP (1) JPS51142499A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251022A (en) * 1985-04-27 1986-11-08 Junichi Nishizawa Liquid epitaxial growth process of compound semiconductor and equipment therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251022A (en) * 1985-04-27 1986-11-08 Junichi Nishizawa Liquid epitaxial growth process of compound semiconductor and equipment therefor
JPH0564849B2 (en) * 1985-04-27 1993-09-16 Junichi Nishizawa

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