JPS51142499A - Crystal growing method - Google Patents
Crystal growing methodInfo
- Publication number
- JPS51142499A JPS51142499A JP6653775A JP6653775A JPS51142499A JP S51142499 A JPS51142499 A JP S51142499A JP 6653775 A JP6653775 A JP 6653775A JP 6653775 A JP6653775 A JP 6653775A JP S51142499 A JPS51142499 A JP S51142499A
- Authority
- JP
- Japan
- Prior art keywords
- crystal growing
- growing method
- high efficiency
- smooth surface
- luminescent diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To grow GaP crystal which has smooth surface with low etch pits density and is high efficiency luminescent diode.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6653775A JPS51142499A (en) | 1975-06-04 | 1975-06-04 | Crystal growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6653775A JPS51142499A (en) | 1975-06-04 | 1975-06-04 | Crystal growing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51142499A true JPS51142499A (en) | 1976-12-08 |
Family
ID=13318734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6653775A Pending JPS51142499A (en) | 1975-06-04 | 1975-06-04 | Crystal growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51142499A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61251022A (en) * | 1985-04-27 | 1986-11-08 | Junichi Nishizawa | Liquid epitaxial growth process of compound semiconductor and equipment therefor |
-
1975
- 1975-06-04 JP JP6653775A patent/JPS51142499A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61251022A (en) * | 1985-04-27 | 1986-11-08 | Junichi Nishizawa | Liquid epitaxial growth process of compound semiconductor and equipment therefor |
JPH0564849B2 (en) * | 1985-04-27 | 1993-09-16 | Junichi Nishizawa |
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