JPS51138177A - Semi-conductor device - Google Patents

Semi-conductor device

Info

Publication number
JPS51138177A
JPS51138177A JP6237875A JP6237875A JPS51138177A JP S51138177 A JPS51138177 A JP S51138177A JP 6237875 A JP6237875 A JP 6237875A JP 6237875 A JP6237875 A JP 6237875A JP S51138177 A JPS51138177 A JP S51138177A
Authority
JP
Japan
Prior art keywords
semi
conductor device
bewteen
junction
interval
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6237875A
Other languages
Japanese (ja)
Other versions
JPS584467B2 (en
Inventor
Yahei Takase
Toshiyuki Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50062378A priority Critical patent/JPS584467B2/en
Publication of JPS51138177A publication Critical patent/JPS51138177A/en
Publication of JPS584467B2 publication Critical patent/JPS584467B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To prevent destruction of a device due to initial ON current by making the junction bewteen an auxiliary emitter layer and a cathode base layer as well as the interval between gate electrodes partially different so that the ratio of the minimum value thereof to the maximum value may be within a predetermined domain.
JP50062378A 1975-05-23 1975-05-23 Hand tie souchi Expired JPS584467B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50062378A JPS584467B2 (en) 1975-05-23 1975-05-23 Hand tie souchi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50062378A JPS584467B2 (en) 1975-05-23 1975-05-23 Hand tie souchi

Publications (2)

Publication Number Publication Date
JPS51138177A true JPS51138177A (en) 1976-11-29
JPS584467B2 JPS584467B2 (en) 1983-01-26

Family

ID=13198382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50062378A Expired JPS584467B2 (en) 1975-05-23 1975-05-23 Hand tie souchi

Country Status (1)

Country Link
JP (1) JPS584467B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0669659A2 (en) * 1994-02-24 1995-08-30 Mitsubishi Denki Kabushiki Kaisha Thyristor and method of fabricating the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4971877A (en) * 1972-09-25 1974-07-11
JPS49115279A (en) * 1973-03-01 1974-11-02
JPS5057583A (en) * 1973-09-13 1975-05-20

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4971877A (en) * 1972-09-25 1974-07-11
JPS49115279A (en) * 1973-03-01 1974-11-02
JPS5057583A (en) * 1973-09-13 1975-05-20

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0669659A2 (en) * 1994-02-24 1995-08-30 Mitsubishi Denki Kabushiki Kaisha Thyristor and method of fabricating the same
EP0669659A3 (en) * 1994-02-24 1999-05-26 Mitsubishi Denki Kabushiki Kaisha Thyristor and method of fabricating the same

Also Published As

Publication number Publication date
JPS584467B2 (en) 1983-01-26

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