JPS5229180A - Vertical field effect semiconductive device - Google Patents

Vertical field effect semiconductive device

Info

Publication number
JPS5229180A
JPS5229180A JP10573975A JP10573975A JPS5229180A JP S5229180 A JPS5229180 A JP S5229180A JP 10573975 A JP10573975 A JP 10573975A JP 10573975 A JP10573975 A JP 10573975A JP S5229180 A JPS5229180 A JP S5229180A
Authority
JP
Japan
Prior art keywords
field effect
vertical field
semiconductive device
effect semiconductive
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10573975A
Other languages
Japanese (ja)
Inventor
Hajime Sawazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10573975A priority Critical patent/JPS5229180A/en
Publication of JPS5229180A publication Critical patent/JPS5229180A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To make a vertical FET, which has an enough safety voltage between the gate layer and the source layer, by supressing the spread of depletion layer on the surface side.
COPYRIGHT: (C)1977,JPO&Japio
JP10573975A 1975-09-01 1975-09-01 Vertical field effect semiconductive device Pending JPS5229180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10573975A JPS5229180A (en) 1975-09-01 1975-09-01 Vertical field effect semiconductive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10573975A JPS5229180A (en) 1975-09-01 1975-09-01 Vertical field effect semiconductive device

Publications (1)

Publication Number Publication Date
JPS5229180A true JPS5229180A (en) 1977-03-04

Family

ID=14415630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10573975A Pending JPS5229180A (en) 1975-09-01 1975-09-01 Vertical field effect semiconductive device

Country Status (1)

Country Link
JP (1) JPS5229180A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589374A (en) * 1981-07-08 1983-01-19 Mitsubishi Electric Corp Vertical type field effect transistor
US4514747A (en) * 1978-08-07 1985-04-30 Hitachi, Ltd. Field controlled thyristor with double-diffused source region

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514747A (en) * 1978-08-07 1985-04-30 Hitachi, Ltd. Field controlled thyristor with double-diffused source region
JPS589374A (en) * 1981-07-08 1983-01-19 Mitsubishi Electric Corp Vertical type field effect transistor

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