JPS5229180A - Vertical field effect semiconductive device - Google Patents
Vertical field effect semiconductive deviceInfo
- Publication number
- JPS5229180A JPS5229180A JP10573975A JP10573975A JPS5229180A JP S5229180 A JPS5229180 A JP S5229180A JP 10573975 A JP10573975 A JP 10573975A JP 10573975 A JP10573975 A JP 10573975A JP S5229180 A JPS5229180 A JP S5229180A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- vertical field
- semiconductive device
- effect semiconductive
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To make a vertical FET, which has an enough safety voltage between the gate layer and the source layer, by supressing the spread of depletion layer on the surface side.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10573975A JPS5229180A (en) | 1975-09-01 | 1975-09-01 | Vertical field effect semiconductive device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10573975A JPS5229180A (en) | 1975-09-01 | 1975-09-01 | Vertical field effect semiconductive device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5229180A true JPS5229180A (en) | 1977-03-04 |
Family
ID=14415630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10573975A Pending JPS5229180A (en) | 1975-09-01 | 1975-09-01 | Vertical field effect semiconductive device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5229180A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS589374A (en) * | 1981-07-08 | 1983-01-19 | Mitsubishi Electric Corp | Vertical type field effect transistor |
US4514747A (en) * | 1978-08-07 | 1985-04-30 | Hitachi, Ltd. | Field controlled thyristor with double-diffused source region |
-
1975
- 1975-09-01 JP JP10573975A patent/JPS5229180A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4514747A (en) * | 1978-08-07 | 1985-04-30 | Hitachi, Ltd. | Field controlled thyristor with double-diffused source region |
JPS589374A (en) * | 1981-07-08 | 1983-01-19 | Mitsubishi Electric Corp | Vertical type field effect transistor |
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