JPS51137393A - Manufacturing method for semiconductor light emitting device - Google Patents

Manufacturing method for semiconductor light emitting device

Info

Publication number
JPS51137393A
JPS51137393A JP6165775A JP6165775A JPS51137393A JP S51137393 A JPS51137393 A JP S51137393A JP 6165775 A JP6165775 A JP 6165775A JP 6165775 A JP6165775 A JP 6165775A JP S51137393 A JPS51137393 A JP S51137393A
Authority
JP
Japan
Prior art keywords
manufacturing
light emitting
emitting device
semiconductor light
semiconductor base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6165775A
Other languages
Japanese (ja)
Inventor
Toshio Sogo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6165775A priority Critical patent/JPS51137393A/en
Publication of JPS51137393A publication Critical patent/JPS51137393A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Abstract

PURPOSE: Manufacturing method for a light emitting device being able to use the semiconductor base surface as 100π reflecting surface and to form ohmic electrodes very easily.
COPYRIGHT: (C)1976,JPO&Japio
JP6165775A 1975-05-22 1975-05-22 Manufacturing method for semiconductor light emitting device Pending JPS51137393A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6165775A JPS51137393A (en) 1975-05-22 1975-05-22 Manufacturing method for semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6165775A JPS51137393A (en) 1975-05-22 1975-05-22 Manufacturing method for semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS51137393A true JPS51137393A (en) 1976-11-27

Family

ID=13177503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6165775A Pending JPS51137393A (en) 1975-05-22 1975-05-22 Manufacturing method for semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS51137393A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833882A (en) * 1981-08-21 1983-02-28 Mitsubishi Electric Corp Manufacture of light emitting diode
JPH0239578A (en) * 1988-07-29 1990-02-08 Kyocera Corp Light emitting element
WO2001091196A1 (en) * 2000-05-23 2001-11-29 Toyoda Gosei Co., Ltd. Group iii nitride compound semiconductor light-emitting device and method for producing the same
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6617668B1 (en) 1999-05-21 2003-09-09 Toyoda Gosei Co., Ltd. Methods and devices using group III nitride compound semiconductor
US6645295B1 (en) 1999-05-10 2003-11-11 Toyoda Gosei Co., Ltd. Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
US6830948B2 (en) 1999-12-24 2004-12-14 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
US6844246B2 (en) 2001-03-22 2005-01-18 Toyoda Gosei Co., Ltd. Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it
US6855620B2 (en) 2000-04-28 2005-02-15 Toyoda Gosei Co., Ltd. Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices
US6861305B2 (en) 2000-03-31 2005-03-01 Toyoda Gosei Co., Ltd. Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
US6860943B2 (en) 2001-10-12 2005-03-01 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor
US6960485B2 (en) 2000-03-31 2005-11-01 Toyoda Gosei Co., Ltd. Light-emitting device using a group III nitride compound semiconductor and a method of manufacture
US6967122B2 (en) 2000-03-14 2005-11-22 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor and method for manufacturing the same
US6979584B2 (en) 1999-12-24 2005-12-27 Toyoda Gosei Co, Ltd. Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
US7052979B2 (en) 2001-02-14 2006-05-30 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
JP2006253724A (en) * 2006-06-07 2006-09-21 Toyoda Gosei Co Ltd Iii-group nitride compound semiconductor light emitting element
US7141444B2 (en) 2000-03-14 2006-11-28 Toyoda Gosei Co., Ltd. Production method of III nitride compound semiconductor and III nitride compound semiconductor element
US7619261B2 (en) 2000-08-07 2009-11-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833882A (en) * 1981-08-21 1983-02-28 Mitsubishi Electric Corp Manufacture of light emitting diode
JPH0239578A (en) * 1988-07-29 1990-02-08 Kyocera Corp Light emitting element
US6645295B1 (en) 1999-05-10 2003-11-11 Toyoda Gosei Co., Ltd. Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
US6881651B2 (en) 1999-05-21 2005-04-19 Toyoda Gosei Co., Ltd. Methods and devices using group III nitride compound semiconductor
US6617668B1 (en) 1999-05-21 2003-09-09 Toyoda Gosei Co., Ltd. Methods and devices using group III nitride compound semiconductor
US7176497B2 (en) 1999-07-27 2007-02-13 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor
US6930329B2 (en) 1999-07-27 2005-08-16 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6818926B2 (en) 1999-07-27 2004-11-16 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6835966B2 (en) 1999-07-27 2004-12-28 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6893945B2 (en) 1999-07-27 2005-05-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride group compound semiconductor
US6830948B2 (en) 1999-12-24 2004-12-14 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
US7560725B2 (en) 1999-12-24 2009-07-14 Toyoda Gosei Co., Ltd. Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
US6979584B2 (en) 1999-12-24 2005-12-27 Toyoda Gosei Co, Ltd. Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
US7141444B2 (en) 2000-03-14 2006-11-28 Toyoda Gosei Co., Ltd. Production method of III nitride compound semiconductor and III nitride compound semiconductor element
US7462867B2 (en) 2000-03-14 2008-12-09 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor devices and method for fabricating the same
US6967122B2 (en) 2000-03-14 2005-11-22 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor and method for manufacturing the same
US6861305B2 (en) 2000-03-31 2005-03-01 Toyoda Gosei Co., Ltd. Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
US7491984B2 (en) 2000-03-31 2009-02-17 Toyoda Gosei Co., Ltd. Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
US6960485B2 (en) 2000-03-31 2005-11-01 Toyoda Gosei Co., Ltd. Light-emitting device using a group III nitride compound semiconductor and a method of manufacture
US6855620B2 (en) 2000-04-28 2005-02-15 Toyoda Gosei Co., Ltd. Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices
US6861281B2 (en) 2000-05-23 2005-03-01 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light-emitting device and method for producing the same
JP2001332762A (en) * 2000-05-23 2001-11-30 Toyoda Gosei Co Ltd Iii nitride compound semiconductor light emitting device and its manufacturing method
WO2001091196A1 (en) * 2000-05-23 2001-11-29 Toyoda Gosei Co., Ltd. Group iii nitride compound semiconductor light-emitting device and method for producing the same
US7619261B2 (en) 2000-08-07 2009-11-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US7052979B2 (en) 2001-02-14 2006-05-30 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
US6844246B2 (en) 2001-03-22 2005-01-18 Toyoda Gosei Co., Ltd. Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it
US6860943B2 (en) 2001-10-12 2005-03-01 Toyoda Gosei Co., Ltd. Method for producing group III nitride compound semiconductor
JP2006253724A (en) * 2006-06-07 2006-09-21 Toyoda Gosei Co Ltd Iii-group nitride compound semiconductor light emitting element

Similar Documents

Publication Publication Date Title
JPS51137393A (en) Manufacturing method for semiconductor light emitting device
JPS51127971A (en) Automatic fuel supply device
JPS5228281A (en) Light emitting semiconductor device
JPS5211784A (en) Photo semiconductor device
JPS51118395A (en) Semiconductor emitting unit and manufacturing process
JPS5318967A (en) Wafer sucking jig
JPS5227540A (en) Constant-voltage supply circuit
JPS51149781A (en) Device for mounting semiconductor laserelement
JPS51134566A (en) Semiconductor unit manufacturing process
JPS51116490A (en) Pipe notching device
JPS546789A (en) Semiconductor light emitting device
JPS5218173A (en) Soldering method of semiconductor element
JPS5376692A (en) Semiconductor light emitting device
JPS5294070A (en) Process for preparing semi-conductor
JPS5223282A (en) Method of manufacturing semiconductor device
JPS51131277A (en) Semi-conductor unit manufacturing process
JPS5276872A (en) Cutting method of semiconductor wafer
JPS5210676A (en) Semiconductor device
JPS539117A (en) Micro-fiche holder
JPS5223704A (en) Lighting device of large diameter pump
JPS51146781A (en) Lighting fixture
JPS51135193A (en) Lighting equipment
JPS51142795A (en) Grinding device
JPS52135692A (en) Light emitting diode device
JPS51141952A (en) Nut retaining device