JPS50134573A - - Google Patents
Info
- Publication number
- JPS50134573A JPS50134573A JP3770975A JP3770975A JPS50134573A JP S50134573 A JPS50134573 A JP S50134573A JP 3770975 A JP3770975 A JP 3770975A JP 3770975 A JP3770975 A JP 3770975A JP S50134573 A JPS50134573 A JP S50134573A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2415717A DE2415717A1 (de) | 1974-04-01 | 1974-04-01 | Verfahren zum gezielten einbringen von dotierungsmaterial in einen halbleiterkristallstab |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS50134573A true JPS50134573A (ja) | 1975-10-24 |
Family
ID=5911818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3770975A Pending JPS50134573A (ja) | 1974-04-01 | 1975-03-28 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS50134573A (ja) |
| DE (1) | DE2415717A1 (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2623350A1 (de) * | 1976-05-25 | 1977-12-08 | Wacker Chemitronic | Verfahren zur bestimmung des wirksamen dotierstoffgehaltes von wasserstoff fuer die halbleiterherstellung |
| DE2624756A1 (de) * | 1976-06-02 | 1977-12-15 | Siemens Ag | Verfahren zum herstellen von aus silicium oder siliciumcarbid bestehenden, direkt beheizbaren rohren |
| IE56157B1 (en) * | 1983-01-14 | 1991-05-08 | Westinghouse Electric Corp | Method of controlled,uniform doping of floating zone silicon |
| AU5966600A (en) * | 1999-07-19 | 2001-02-05 | Topsil Semiconductor Materials A/S | Method and apparatus for production of a doped feed rod by ion implantation |
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1974
- 1974-04-01 DE DE2415717A patent/DE2415717A1/de not_active Withdrawn
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1975
- 1975-03-28 JP JP3770975A patent/JPS50134573A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2415717A1 (de) | 1975-10-16 |