JPS4915988B1 - - Google Patents

Info

Publication number
JPS4915988B1
JPS4915988B1 JP3770A JP3770A JPS4915988B1 JP S4915988 B1 JPS4915988 B1 JP S4915988B1 JP 3770 A JP3770 A JP 3770A JP 3770 A JP3770 A JP 3770A JP S4915988 B1 JPS4915988 B1 JP S4915988B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3770A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4915988B1 publication Critical patent/JPS4915988B1/ja
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/02Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material to surfaces by single means not covered by groups B05C1/00 - B05C7/00, whether or not also using other means
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/06Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063Sliding boat system
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02625Liquid deposition using melted materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP3770A 1968-12-31 1970-01-05 Pending JPS4915988B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR182980 1968-12-31

Publications (1)

Publication Number Publication Date
JPS4915988B1 true JPS4915988B1 (de) 1974-04-18

Family

ID=8659864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3770A Pending JPS4915988B1 (de) 1968-12-31 1970-01-05

Country Status (6)

Country Link
JP (1) JPS4915988B1 (de)
BE (1) BE743828A (de)
DE (1) DE2000096C3 (de)
FR (1) FR1600341A (de)
GB (1) GB1299610A (de)
NL (1) NL159813B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7117428A (de) * 1970-12-23 1972-06-27
JPS5342230B2 (de) * 1972-10-19 1978-11-09
JPS49102652U (de) * 1972-12-22 1974-09-04
JPS5056873A (de) * 1973-09-14 1975-05-17
DE3036643C2 (de) * 1980-09-29 1984-09-20 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur Flüssigphasen-Epitaxie

Also Published As

Publication number Publication date
DE2000096B2 (de) 1977-09-15
NL159813B (nl) 1979-03-15
DE2000096A1 (de) 1970-07-23
BE743828A (de) 1970-06-29
FR1600341A (de) 1970-07-20
GB1299610A (en) 1972-12-13
DE2000096C3 (de) 1978-05-18
NL6919464A (de) 1970-07-02

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