JPS4915988B1 - - Google Patents
Info
- Publication number
- JPS4915988B1 JPS4915988B1 JP3770A JP3770A JPS4915988B1 JP S4915988 B1 JPS4915988 B1 JP S4915988B1 JP 3770 A JP3770 A JP 3770A JP 3770 A JP3770 A JP 3770A JP S4915988 B1 JPS4915988 B1 JP S4915988B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/02—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material to surfaces by single means not covered by groups B05C1/00 - B05C7/00, whether or not also using other means
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR182980 | 1968-12-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4915988B1 true JPS4915988B1 (ja) | 1974-04-18 |
Family
ID=8659864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3770A Pending JPS4915988B1 (ja) | 1968-12-31 | 1970-01-05 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS4915988B1 (ja) |
BE (1) | BE743828A (ja) |
DE (1) | DE2000096C3 (ja) |
FR (1) | FR1600341A (ja) |
GB (1) | GB1299610A (ja) |
NL (1) | NL159813B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7117428A (ja) * | 1970-12-23 | 1972-06-27 | ||
JPS5342230B2 (ja) * | 1972-10-19 | 1978-11-09 | ||
JPS49102652U (ja) * | 1972-12-22 | 1974-09-04 | ||
JPS5056873A (ja) * | 1973-09-14 | 1975-05-17 | ||
DE3036643C2 (de) * | 1980-09-29 | 1984-09-20 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zur Flüssigphasen-Epitaxie |
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1968
- 1968-12-31 FR FR1600341D patent/FR1600341A/fr not_active Expired
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1969
- 1969-12-25 NL NL6919464A patent/NL159813B/xx not_active IP Right Cessation
- 1969-12-29 BE BE743828D patent/BE743828A/xx not_active IP Right Cessation
- 1969-12-30 GB GB6324769A patent/GB1299610A/en not_active Expired
-
1970
- 1970-01-02 DE DE19702000096 patent/DE2000096C3/de not_active Expired
- 1970-01-05 JP JP3770A patent/JPS4915988B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE2000096B2 (de) | 1977-09-15 |
NL159813B (nl) | 1979-03-15 |
DE2000096A1 (de) | 1970-07-23 |
BE743828A (ja) | 1970-06-29 |
FR1600341A (ja) | 1970-07-20 |
GB1299610A (en) | 1972-12-13 |
DE2000096C3 (de) | 1978-05-18 |
NL6919464A (ja) | 1970-07-02 |