JPH1174187A - Substrate thermal treatment method and apparatus - Google Patents
Substrate thermal treatment method and apparatusInfo
- Publication number
- JPH1174187A JPH1174187A JP24782397A JP24782397A JPH1174187A JP H1174187 A JPH1174187 A JP H1174187A JP 24782397 A JP24782397 A JP 24782397A JP 24782397 A JP24782397 A JP 24782397A JP H1174187 A JPH1174187 A JP H1174187A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heating
- heating plate
- heat treatment
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Crystal (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体ウエハ、
液晶表示装置用あるいはフォトマスク用のガラス基板な
どの基板の表面にフォトレジスト等の塗布液を塗布した
後に基板を加熱処理したり、化学増幅型レジストが塗布
された基板を露光後にベーク処理したりする場合などに
適用される基板加熱処理方法、ならびに、その方法の実
施に使用される基板加熱処理装置に関する。[0001] The present invention relates to a semiconductor wafer,
After applying a coating liquid such as a photoresist to the surface of a substrate such as a glass substrate for a liquid crystal display device or a photomask, the substrate is subjected to a heat treatment, or a substrate coated with a chemically amplified resist is baked after exposure. The present invention relates to a substrate heat treatment method applied to a case where the method is performed, and a substrate heat treatment apparatus used for performing the method.
【０００２】[0002]
【従来の技術】基板の表面にフォトレジスト等の塗布液
を塗布した後に基板を加熱処理したり、化学増幅型レジ
ストが塗布された基板を露光後ベーク（ＰＥＢ）処理し
たりする場合などには、加熱板（ホットプレート）を備
えた基板加熱処理装置が使用され、所定の加熱処理温度
に加熱された加熱板上に基板を直接に載置しあるいは加
熱板上に基板を僅かに浮かせた状態で支持して、加熱板
からの熱伝導により基板を所定の加熱処理温度に加熱す
るようにしている。この基板加熱処理装置においては、
基板を所定の加熱処理温度で加熱処理するために、加熱
板の内部に配置された測温抵抗体で加熱板の温度を測定
し、その測定値に基づいて加熱板に内蔵されたヒータを
ＰＩＤ制御することにより、加熱板の温度を常に所定の
加熱処理温度に保持するようにしている。2. Description of the Related Art When a coating solution such as a photoresist is applied to the surface of a substrate and then the substrate is subjected to a heat treatment, or a substrate coated with a chemically amplified resist is subjected to a post-exposure bake (PEB) treatment. A substrate heat treatment apparatus equipped with a heating plate (hot plate) is used, and the substrate is directly placed on the heating plate heated to a predetermined heating processing temperature or the substrate is slightly floated on the heating plate. , And the substrate is heated to a predetermined heat treatment temperature by heat conduction from the heating plate. In this substrate heating apparatus,
In order to heat the substrate at a predetermined heating temperature, the temperature of the heating plate is measured by a resistance temperature detector disposed inside the heating plate, and the heater built in the heating plate is set to PID based on the measured value. By controlling, the temperature of the heating plate is always kept at a predetermined heating processing temperature.
【０００３】ところが、基板を加熱板上へ搬入して載置
した時には、所定の加熱処理温度、例えば１２０℃に保
たれた加熱板が常温（２０℃程度）の基板に熱を吸収さ
れて、一時的に加熱板の温度が大きく低下する。このよ
うな加熱板の急峻な温度低下を即座に補償するように温
度制御が行われると、ヒータから加熱板に熱を与え過ぎ
てしまうことになり、加熱板の温度がオーバーシュート
を起こして、基板を加熱し過ぎてしまう。そこで、従来
は、図５に加熱板および基板のそれぞれの温度変化の様
子を示すように、加熱板の温度（その変化の状態を曲線
Ａで示す）が一時的に大きく低下しても、オーバーシュ
ートすることなく加熱板が１２０℃の温度に緩やかに到
達するように、ＰＩＤの値を変化させることにより対応
していた。図５において、曲線Ｂが基板の温度変化の状
態を示し、ｔａが、基板を加熱板上に搬入して載置した
時点を、ｔｂが、加熱板および基板のそれぞれの温度が
所定の加熱処理温度（１２０℃）に到達した時点をそれ
ぞれ示す。However, when the substrate is carried in and placed on the heating plate, the heating plate kept at a predetermined heat treatment temperature, for example, 120 ° C., absorbs heat by the substrate at normal temperature (about 20 ° C.). Temporarily the temperature of the heating plate drops significantly. If temperature control is performed so as to immediately compensate for such a steep temperature drop of the heating plate, the heater will overheat the heating plate, causing the temperature of the heating plate to overshoot, The substrate is overheated. Conventionally, as shown in FIG. 5, the temperature change of the heating plate and the substrate is shown in FIG. This was dealt with by changing the value of PID so that the heating plate slowly reached the temperature of 120 ° C. without shooting. In FIG. 5, a curve B indicates a state of the temperature change of the substrate, ta indicates a point in time when the substrate is carried in and placed on the heating plate, and tb indicates a temperature at which the respective temperatures of the heating plate and the substrate are the predetermined heat treatment. The time when the temperature (120 ° C.) is reached is shown.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
ように、加熱板の温度がオーバーシュートを起こさない
ようにＰＩＤの値を変化させる方法では、加熱板上に基
板を載置した時点ｔａから基板の温度が所定の加熱処理
温度（１２０℃）に到達した時点ｔｂまでの時間Ｔabが
長くかかってしまう。また、加熱処理温度の設定を変更
したときにも、加熱板の温度が変更後の加熱処理温度に
到達するまでの時間が長くかかってしまう。この結果、
装置のスループットが低下することとなる。However, in the conventional method of changing the value of PID so that the temperature of the heating plate does not cause overshoot, the substrate is placed on the heating plate from the point in time ta when the substrate is placed on the heating plate. The time Tab until the temperature reaches a predetermined heat treatment temperature (120 ° C.) tb takes a long time. Further, even when the setting of the heating temperature is changed, it takes a long time until the temperature of the heating plate reaches the changed heating temperature. As a result,
This will reduce the throughput of the device.
【０００５】また、加熱板の温度が所定の加熱処理温度
に緩やかに到達するようにＰＩＤの値を調節すると、複
数枚の基板を連続して加熱処理する場合に、基板の加熱
処理温度が安定するまでに数枚の基板の加熱処理が行わ
れる必要がある。このため、基板の熱処理履歴に各基板
間で差を生じる、といった問題点がある。If the value of the PID is adjusted so that the temperature of the heating plate gradually reaches a predetermined heating temperature, the heating temperature of the substrate becomes stable when a plurality of substrates are continuously heated. It is necessary to heat-treat several substrates before the heat treatment. For this reason, there is a problem that a difference occurs between the substrates in the heat treatment history of the substrates.
【０００６】この発明は、以上のような事情に鑑みてな
されたものであり、加熱板上に基板を搬入して載置した
後基板の温度が所定の加熱処理温度に到達するまでの時
間が短縮され、また、加熱処理温度の設定を変更したと
きに、加熱板の温度が変更後の加熱処理温度に到達する
までの時間が短縮されて、装置のスループットを向上さ
せることができ、また、複数枚の基板を連続して加熱処
理したときに、各基板間で熱処理履歴に差を生じない
で、各基板間で加熱処理品質がばらつくことなく均一な
加熱処理を行うことができる基板加熱処理方法を提供す
ること、ならびに、その方法を好適に実施することがで
きる基板加熱処理装置を提供することを目的とする。[0006] The present invention has been made in view of the above circumstances, and it takes time until the temperature of the substrate reaches a predetermined heat treatment temperature after the substrate is loaded and placed on the heating plate. When the setting of the heat treatment temperature is changed, the time required for the temperature of the heating plate to reach the changed heat treatment temperature is shortened, and the throughput of the apparatus can be improved. When a plurality of substrates are successively heat-treated, there is no difference in the heat treatment history between the substrates, and a substrate heat treatment that can perform a uniform heat treatment without varying the heat treatment quality between the substrates. It is an object of the present invention to provide a method and a substrate heat treatment apparatus capable of suitably performing the method.
【０００７】[0007]
【課題を解決するための手段】請求項１に係る発明は、
所定の加熱処理温度に加熱された加熱板上へ基板を搬入
し、加熱板の上面に基板を接触または近接させて一定時
間保持して、基板を加熱処理した後、加熱板上から基板
を搬出し、この熱処理サイクルを繰り返す基板加熱処理
方法において、前記熱処理サイクル内において、前記加
熱板を固定出力で加熱する状態と自動温度調節して加熱
する状態とを切り換えることを特徴とする。The invention according to claim 1 is
The substrate is carried into the heating plate heated to a predetermined heating temperature, the substrate is brought into contact with or close to the upper surface of the heating plate, held for a certain period of time, the substrate is heated, and then the substrate is unloaded from the heating plate. In the substrate heat treatment method in which this heat treatment cycle is repeated, a state in which the heating plate is heated with a fixed output and a state in which the heating plate is heated with automatic temperature adjustment are switched in the heat treatment cycle.
【０００８】請求項２に係る発明は、請求項１記載の方
法において、加熱板の上面に基板を接触または近接させ
た時点で自動温度調節加熱状態から固定出力加熱状態へ
切り換え、その切換え時点から所定時間経過後に固定出
力加熱状態から自動温度調節加熱状態へ切り換えて、そ
の自動温度調節加熱状態を、基板が加熱処理された後加
熱板上から搬出され次に加熱処理すべき基板が加熱板上
へ搬入されて加熱板の上面に接触または近接させられる
まで継続させることを特徴とする。According to a second aspect of the present invention, in the method according to the first aspect, the automatic temperature control heating state is switched to the fixed output heating state when the substrate is brought into contact with or close to the upper surface of the heating plate. After a predetermined time has elapsed, the state is switched from the fixed output heating state to the automatic temperature control heating state, and the automatic temperature control heating state is carried out from the heating plate after the substrate is subjected to the heat treatment, and the substrate to be subjected to the next heat treatment is placed on the heating plate. And is continued until it is brought into contact with or brought close to the upper surface of the heating plate.
【０００９】請求項３に係る発明は、請求項１または請
求項２記載の方法において、加熱板の自動温度調節をＰ
ＩＤ制御により行うことを特徴とする。According to a third aspect of the present invention, in the method according to the first or second aspect, the automatic temperature control of the heating plate is controlled by P.
It is characterized by performing by ID control.
【００１０】請求項４に係る発明は、上面に基板を接触
または近接させて載置し基板を加熱する加熱板と、この
加熱板を加熱する加熱手段と、この加熱手段を駆動制御
して前記加熱板を所定の加熱処理温度に調節する自動温
度調節手段と、基板を、前記加熱板の上面から上方へ離
間した位置と加熱板の上面に接触または近接した位置と
の間で昇降させる基板昇降手段とを備えた基板加熱処理
装置において、前記加熱手段を固定出力で駆動させて前
記加熱板を前記所定の加熱処理温度より高い温度に加熱
する固定出力駆動手段と、前記自動温度調節手段による
前記加熱手段の駆動制御と前記固定出力駆動手段による
加熱手段の駆動制御とを択一的に切り換える切換え手段
と、この切換え手段を作動させる作動手段とを設けたこ
とを特徴とする。According to a fourth aspect of the present invention, there is provided a heating plate for heating a substrate by placing the substrate on or close to the upper surface thereof, heating the heating plate, and controlling the driving of the heating unit. Automatic temperature adjusting means for adjusting the heating plate to a predetermined heat treatment temperature, and a substrate elevating device for elevating the substrate between a position separated upward from the upper surface of the heating plate and a position in contact with or close to the upper surface of the heating plate. Means for heating the heating plate to a temperature higher than the predetermined heating processing temperature by driving the heating means at a fixed output, and Switching means for selectively switching between driving control of the heating means and driving control of the heating means by the fixed output driving means, and operating means for operating the switching means are provided.
【００１１】請求項５に係る発明は、請求項４記載の装
置において、加熱板の上面に基板を接触または近接させ
た時点で作動手段により切換え手段を作動させて自動温
度調節手段による加熱手段の駆動制御から固定出力駆動
手段による加熱手段の駆動制御へ切り換え、その切換え
時点から所定時間経過後に作動手段により切換え手段を
作動させて固定出力駆動手段による加熱手段の駆動制御
から自動温度調節手段による加熱手段の駆動制御へ切り
換えて、その自動温度調節手段による加熱手段の駆動制
御を、基板が加熱処理された後加熱板上から搬出され次
に加熱処理すべき基板が加熱板上へ搬入されて加熱板の
上面に接触または近接させられるまで継続させることを
特徴とする。According to a fifth aspect of the present invention, in the apparatus according to the fourth aspect, the switching means is operated by the operating means when the substrate is brought into contact with or close to the upper surface of the heating plate, and the heating means is controlled by the automatic temperature adjusting means. The drive control is switched from the drive control to the drive control of the heating means by the fixed output drive means, and after a lapse of a predetermined time from the switching time, the switching means is operated by the operating means, and the drive control of the heating means by the fixed output drive means is changed to the heating by the automatic temperature control means. The driving control of the heating means by the automatic temperature control means is switched to the driving control of the heating means, and after the substrate is subjected to the heat treatment, the substrate is carried out from the heating plate, and then the substrate to be subjected to the heating treatment is carried into the heating plate and heated. It is characterized in that it is continued until it is brought into contact with or close to the upper surface of the plate.
【００１２】請求項６に係る発明は、請求項４または請
求項５記載の装置において、自動温度調節手段による加
熱手段の駆動制御がＰＩＤ制御であることを特徴とす
る。According to a sixth aspect of the present invention, in the device according to the fourth or fifth aspect, the driving control of the heating means by the automatic temperature control means is PID control.
【００１３】請求項１に係る発明の基板加熱処理方法で
は、加熱板を固定出力で加熱する状態と自動温度調節し
て加熱する状態とが適宜切り換えられるので、基板を加
熱板上へ搬入した時に基板が加熱板から吸収する熱量に
見合う程度の熱を、固定出力による加熱によって加熱板
に与えておくことにより、一時的に加熱板の温度が大き
く低下することを防止することが可能になる。したがっ
て、自動温度調節へ切り換えて加熱板を加熱しても、加
熱板に熱を与え過ぎてしまってオーバーシュートを起こ
す、といったことが無くなる。このため、加熱板の温度
が所定の加熱処理温度に緩やかに到達する、といったよ
うな自動温度調節を行わなくてもよいので、加熱板上に
基板を載置してから基板の温度が所定の加熱処理温度に
到達するまでの時間が長くかかったり、加熱処理温度の
設定を変更したときに加熱板の温度が変更後の加熱処理
温度に到達するまでの時間が長くかかったりすることを
無くすことができる。また、複数枚の基板を連続して加
熱処理する場合に、基板の加熱処理温度が安定するまで
に数枚の基板の加熱処理を要する、といったことも無
く、すべての基板を同一の加熱処理温度で加熱処理する
ことができる。In the substrate heating method according to the first aspect of the present invention, a state in which the heating plate is heated with a fixed output and a state in which the heating plate is heated with automatic temperature adjustment are appropriately switched. By applying heat to the heating plate by heating with a fixed output to an extent corresponding to the amount of heat absorbed by the substrate from the heating plate, it is possible to prevent the temperature of the heating plate from temporarily dropping significantly. Therefore, even if the heating plate is heated by switching to the automatic temperature control, overheating is not applied to the heating plate and overshooting does not occur. For this reason, it is not necessary to perform automatic temperature adjustment such that the temperature of the heating plate gradually reaches a predetermined heat treatment temperature, so that the temperature of the substrate is reduced to a predetermined value after the substrate is placed on the heating plate. Eliminate the problem that it takes a long time to reach the heating temperature or that the temperature of the heating plate reaches the changed heating temperature when the setting of the heating temperature is changed Can be. In addition, when heating a plurality of substrates continuously, it is not necessary to heat several substrates until the heating temperature of the substrates is stabilized. For heat treatment.
【００１４】請求項２に係る発明の基板加熱処理方法で
は、基板が加熱板上へ搬入されて加熱板の上面に接触ま
たは近接した時点で自動温度調節加熱状態から固定出力
加熱状態へ切り換えられ、その切換え時点から所定時間
経過後に固定出力加熱状態から自動温度調節加熱状態へ
切り換えられ、その自動温度調節加熱状態が、基板が加
熱処理された後加熱板上から搬出され次に加熱処理すべ
き基板が加熱板上へ搬入されて加熱板の上面に接触また
は近接するまで継続されるので、何らかの原因により、
基板が加熱処理されて加熱板上から搬出されてから次の
基板が加熱板上へ搬入されるまでの時間がばらつくよう
なことがあっても、すべての基板で熱処理履歴が同一に
なる。In the substrate heating method according to the second aspect of the present invention, when the substrate is carried into the heating plate and comes into contact with or approaches the upper surface of the heating plate, the substrate is switched from the automatic temperature control heating state to the fixed output heating state, After a lapse of a predetermined time from the switching point, the fixed output heating state is switched to the automatic temperature control heating state, and the automatic temperature control heating state is carried out from the heating plate after the substrate is subjected to the heat treatment, and the substrate to be subjected to the next heat treatment is performed. Is carried on the heating plate and is continued until it comes into contact with or approaches the upper surface of the heating plate.
Even if the time from when the substrate is heated and unloaded from the heating plate to when the next substrate is loaded onto the heating plate varies, the heat treatment history is the same for all substrates.
【００１５】請求項３に係る発明の基板加熱処理方法で
は、加熱処理された基板が加熱板上から搬出されて次に
加熱処理すべき基板が加熱板上へ搬入されるまでの期間
を含めて、加熱板の温度を所定の加熱処理温度に精度良
く維持することができる。In the substrate heat treatment method according to the third aspect of the present invention, the substrate heat treatment method includes a period from when the heat-treated substrate is carried out from the heating plate to when the next substrate to be heat-treated is carried into the heating plate. In addition, the temperature of the heating plate can be accurately maintained at a predetermined heat treatment temperature.
【００１６】請求項４に係る発明の装置を使用して基板
の加熱処理を行うときは、固定出力駆動手段により加熱
手段を固定出力で駆動制御させて加熱板を所定の加熱処
理温度より高い温度に加熱する状態と、自動温度調節手
段により加熱手段を駆動制御して加熱板を所定の加熱処
理温度に調節する状態とが、作動手段によって切換え手
段を作動させることにより適宜切り換えられるので、基
板を加熱板上へ搬入した時に基板が加熱板から吸収する
熱量に見合う程度の熱を、固定出力による加熱によって
加熱板に与えておくことにより、一時的に加熱板の温度
が大きく低下することを防止することが可能になる。し
たがって、自動温度調節へ切り換えて加熱板を加熱して
も、加熱板に熱を与え過ぎてしまってオーバーシュート
を起こす、といったことが無くなる。このため、加熱板
の温度が所定の加熱処理温度に緩やかに到達する、とい
ったような自動温度調節を行わなくてもよいので、加熱
板上に基板を載置してから基板の温度が所定の加熱処理
温度に到達するまでの時間が長くかかったり、加熱処理
温度の設定を変更したときに加熱板の温度が変更後の加
熱処理温度に到達するまでの時間が長くかかったりする
ことを無くすことができる。また、複数枚の基板を連続
して加熱処理する場合に、基板の加熱処理温度が安定す
るまでに数枚の基板の加熱処理を要する、といったこと
も無く、すべての基板を同一の加熱処理温度で加熱処理
することができる。When the substrate is heated using the apparatus according to the fourth aspect, the heating means is driven and controlled by the fixed output driving means at a fixed output so that the heating plate is heated to a temperature higher than a predetermined heating processing temperature. The state in which heating is performed by the automatic temperature control means and the state in which the heating means is driven and controlled by the automatic temperature control means to adjust the heating plate to a predetermined heat treatment temperature can be appropriately switched by operating the switching means by the operating means. Prevents a significant drop in the temperature of the heating plate temporarily by applying heat to the heating plate by heating with a fixed output that is commensurate with the amount of heat absorbed by the substrate from the heating plate when transported onto the heating plate It becomes possible to do. Therefore, even if the heating plate is heated by switching to the automatic temperature control, overheating is not applied to the heating plate and overshooting does not occur. For this reason, it is not necessary to perform automatic temperature adjustment such that the temperature of the heating plate gradually reaches a predetermined heat treatment temperature, so that the temperature of the substrate is reduced to a predetermined value after the substrate is placed on the heating plate. Eliminate the problem that it takes a long time to reach the heating temperature or that the temperature of the heating plate reaches the changed heating temperature when the setting of the heating temperature is changed Can be. In addition, when heating a plurality of substrates continuously, it is not necessary to heat several substrates until the heating temperature of the substrates is stabilized. For heat treatment.
【００１７】請求項５に係る発明の基板加熱処理装置を
使用するときは、基板が加熱板上へ搬入されて加熱板の
上面に接触または近接した時点で、作動手段により切換
え手段を作動させて自動温度調節手段による加熱手段の
駆動制御から固定出力駆動手段による加熱手段の駆動制
御へ切り換えられ、その切換え時点から所定時間経過後
に、作動手段により切換え手段を作動させて固定出力駆
動手段による加熱手段の駆動制御から自動温度調節手段
による加熱手段の駆動制御へ切り換えられ、その自動温
度調節手段による加熱手段の駆動制御が、基板が加熱処
理された後加熱板上から搬出され次に加熱処理すべき基
板が加熱板上へ搬入されて加熱板の上面に接触または近
接するまで継続されるので、何らかの原因により、基板
が加熱処理されて加熱板上から搬出されてから次の基板
が加熱板上へ搬入されるまでの時間がばらつくようなこ
とがあっても、すべての基板で熱処理履歴が同一にな
る。When the substrate heating apparatus according to the fifth aspect of the present invention is used, the switching means is operated by the operating means when the substrate is carried into the heating plate and comes into contact with or close to the upper surface of the heating plate. The drive control of the heating means by the automatic temperature control means is switched to the drive control of the heating means by the fixed output drive means, and after a lapse of a predetermined time from the switching point, the switching means is operated by the operating means, and the heating means by the fixed output drive means From the drive control of the heating means to the drive control of the heating means by the automatic temperature control means, and the drive control of the heating means by the automatic temperature control means is carried out from the heating plate after the substrate is subjected to the heat treatment, and then the heat treatment is to be performed. Since the substrate is carried into the heating plate and continues until the substrate comes into contact with or approaches the upper surface of the heating plate, the substrate is subjected to heat treatment for some reason. Even when the next substrate after being unloaded from the heat plate such variation time to be carried onto the heat plate, the heat treatment history are the same on all substrates.
【００１８】請求項６に係る発明の基板加熱処理装置を
使用するときは、加熱処理された基板が加熱板上から搬
出されて次に加熱処理すべき基板が加熱板上へ搬入され
るまでの期間を含めて、加熱板の温度が所定の加熱処理
温度に精度良く維持される。When the substrate heat treatment apparatus of the invention according to claim 6 is used, the heat-treated substrate is unloaded from the heating plate until the substrate to be heated next is loaded onto the heating plate. Including the period, the temperature of the heating plate is accurately maintained at a predetermined heat treatment temperature.
【００１９】[0019]
【発明の実施の形態】以下、この発明の好適な実施形態
について図１ないし図４を参照しながら説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will be described below with reference to FIGS.
【００２０】図１および図２は、この発明に係る基板加
熱処理方法を実施するのに使用される基板加熱処理装置
の構成の１例を示し、図１は要部の概略正面図、図２は
回路構成図である。FIGS. 1 and 2 show an example of the configuration of a substrate heating apparatus used to carry out the substrate heating method according to the present invention. FIG. Is a circuit configuration diagram.
【００２１】この加熱処理装置は、表面に塗布液、例え
ばフォトレジストが塗布された基板Ｗを直接に、あるい
は、微小突起を基板Ｗの下面との間に介在させるなどし
て僅かな間隔を設けて載置する加熱板（ホットプレー
ト）１０を有している。加熱板１０には、ヒータ（図１
には図示せず）が内蔵されており、また、加熱板１０の
温度を測定するための温度センサ１２が内設されてい
る。また、加熱板１０には、複数個、例えば３個の貫通
孔１４が穿設されており、その貫通孔１４にリフトピン
１６がそれぞれ上下方向に摺動自在に挿通されている。
３本のリフトピン１６は、昇降板１８の上面に固着され
ており、昇降板１８は、それを上下方向へ往復移動させ
る駆動機構、図示例ではエアーシリンダ２０に連結され
ている。そして、図１の（ａ）に示すように、エアーシ
リンダ２０によって昇降板１８を上昇させることによ
り、３本のリフトピン１６を加熱板１０の上面より突出
させて、３本のリフトピン１６によって基板Ｗを、加熱
板１０の上面から離間させた状態で支持するようになっ
ている。また、３本のリフトピン１６によって基板Ｗを
支持した状態で、図１の（ｂ）に示すように、エアーシ
リンダ２０によって昇降板１８を下降させることによ
り、３本のリフトピン１６を加熱板１０の上面より下方
へ引き入れ、これに伴って基板Ｗがリフトピン１６上か
ら加熱板１０の上面へ移載されるようになっている。昇
降板１８の移動ストロークの下端に対応する位置には、
昇降板１８が最下位置へ移動して基板Ｗがリフトピン１
６上から加熱板１０の上面へ移載されたことを検知する
位置センサ２２が設けられている。これらのリフトピン
１６の昇降動作は、装置外への基板Ｗの搬出および装置
内への基板Ｗの搬入に際して行われる。また、図示して
いないが、加熱板１０の上方には、それを覆うようにベ
ークカバーが配設されている。In this heat treatment apparatus, the substrate W coated with a coating liquid, for example, a photoresist on the surface is provided directly, or a small projection is provided between the substrate W and the lower surface of the substrate W to provide a slight gap. And a heating plate (hot plate) 10 to be placed. The heating plate 10 includes a heater (FIG. 1).
(Not shown) is built in, and a temperature sensor 12 for measuring the temperature of the heating plate 10 is provided inside. Further, a plurality of, for example, three through holes 14 are formed in the heating plate 10, and lift pins 16 are slidably inserted in the through holes 14 in the vertical direction.
The three lift pins 16 are fixed to the upper surface of an elevating plate 18, and the elevating plate 18 is connected to a drive mechanism for moving the elevating plate 18 up and down, in the illustrated example, an air cylinder 20. Then, as shown in FIG. 1A, the lift plate 18 is raised by the air cylinder 20 so that the three lift pins 16 protrude from the upper surface of the heating plate 10, and the substrate W is moved by the three lift pins 16. Are supported while being separated from the upper surface of the heating plate 10. Further, in a state where the substrate W is supported by the three lift pins 16, as shown in FIG. 1B, the three lift pins 16 are lowered by the air cylinder 20 so that the three lift pins 16 The substrate W is drawn downward from the upper surface, and accordingly, the substrate W is transferred from above the lift pins 16 to the upper surface of the heating plate 10. At a position corresponding to the lower end of the movement stroke of the lifting plate 18,
The elevating plate 18 moves to the lowermost position and the substrate W
6 is provided with a position sensor 22 for detecting the transfer from the top to the upper surface of the heating plate 10. The lifting and lowering operations of the lift pins 16 are performed when the substrate W is carried out of the apparatus and when the substrate W is carried in the apparatus. Although not shown, a bake cover is provided above the heating plate 10 so as to cover the same.
【００２２】加熱板１０に内蔵されたヒータ２４は、図
２に示すように、電源２６に接続され、ヒータ２４およ
び電源２６に対しそれぞれ直列に第１サイリスタ２８お
よび第２サイリスタ３０が接続されており、両サイリス
タ２８は並列に設置されている。第１サイリスタ２８に
はＰＩＤコントローラ３２が接続され、ＰＩＤコントロ
ーラ３２には、加熱板１０に設置された温度センサ１２
が接続されている。このＰＩＤコントローラ３２によ
り、基板Ｗの加熱処理温度として設定された設定温度、
例えば１２０℃と温度センサ１２によって検出された加
熱板１０の実際の温度との差に基づいて、その差を無く
すようにヒータ２４への出力がＰＩＤ制御される。ま
た、第２サイリスタ３０には、互いに直列に位置センサ
２２の接点２２ａ、タイマー３４およびタイマー接点３
４ａが接続されている。そして、位置センサ２２がオン
された時点、すなわち、図１の（ｂ）に示すように基板
Ｗがリフトピン１４上から加熱板１０の上面へ移載され
た時点で、それまでＰＩＤコントローラ３２によりヒー
タ２４への出力を制御していた状態から固定の最大出力
でヒータ２４を駆動制御する状態へ切り換わり、その切
換え時点からタイマー３４に設定された設定時間が経過
した後に、再びＰＩＤコントローラ３２によりヒータ２
４への出力を制御する状態へ切り換わるようになってい
る。As shown in FIG. 2, the heater 24 incorporated in the heating plate 10 is connected to a power supply 26, and a first thyristor 28 and a second thyristor 30 are connected in series to the heater 24 and the power supply 26, respectively. The two thyristors 28 are installed in parallel. A PID controller 32 is connected to the first thyristor 28, and the PID controller 32 has a temperature sensor 12 mounted on the heating plate 10.
Is connected. A set temperature set by the PID controller 32 as a heat treatment temperature of the substrate W;
For example, based on the difference between 120 ° C. and the actual temperature of the heating plate 10 detected by the temperature sensor 12, the output to the heater 24 is subjected to PID control so as to eliminate the difference. The second thyristor 30 has a contact 22a of the position sensor 22, a timer 34 and a timer contact 3
4a is connected. When the position sensor 22 is turned on, that is, when the substrate W is transferred from above the lift pins 14 to the upper surface of the heating plate 10 as shown in FIG. The state of controlling the output to the heater 24 is switched to a state in which the heater 24 is driven and controlled at a fixed maximum output, and after the set time set in the timer 34 has elapsed from the time of the switching, the heater is again controlled by the PID controller 32. 2
4 is switched to a state in which the output to the control unit 4 is controlled.
【００２３】なお、図２に示したような回路構成の代わ
りに、マイクロコンピュータを用いて、同様のシーケン
ス動作を行わせるようにしてもよい。Note that a similar sequence operation may be performed using a microcomputer instead of the circuit configuration shown in FIG.
【００２４】次に、上記構成の基板加熱処理装置を使用
して基板を加熱処理する動作を、図３に示したフローチ
ャートに基づいて説明する。Next, the operation of heating a substrate using the substrate heating apparatus having the above-described structure will be described with reference to the flowchart shown in FIG.
【００２５】この基板加熱処理装置による複数枚の基板
の加熱処理を開始して、未だ装置内に基板が存在してい
ない状態では、加熱板１０の温度は、ＰＩＤコントロー
ラ３２によりヒータ２４への出力がＰＩＤ制御されて、
設定された基板の加熱処理温度、例えば１２０℃に維持
されている（ステップＳ１）。そして、装置内へ基板Ｗ
が搬入され（ステップＳ２）、図１の（ａ）に示すよう
に、リフトピン１６が上昇してリフトピン１６上に基板
Ｗが支持された後、リフトピン１６が下降することによ
り、図１の（ｂ）に示すように、基板Ｗがリフトピン１
６上から加熱板１０の上面へ移載される（ステップＳ３
−１）。これと同時に、基板Ｗが加熱板１０上に載置さ
れたことが位置センサ２２によって検知され、位置セン
サ２２の接点２２ａが閉じて、タイマー３４が作動し、
タイマー接点３４ａが閉じて、第２サイリスタ３０がオ
ン状態へ切り換えられる。これにより、それまでＰＩＤ
コントローラ３２によりヒータ２４への出力をＰＩＤ制
御していた状態から固定の最大出力でヒータ２４を駆動
制御する状態へと切り換わる（ステップＳ３−２）。そ
して、固定の最大出力でヒータ２４が駆動されることに
より、加熱板１０の温度が設定温度（１２０℃）以上に
上昇する（ステップＳ４）。この際、加熱板１０上に載
置された基板Ｗも、加熱板１０からの熱伝導によって温
度が次第に上昇する。When heating of a plurality of substrates is started by the substrate heating apparatus, and no substrates are present in the apparatus, the temperature of the heating plate 10 is output to the heater 24 by the PID controller 32. Is PID controlled,
The heating temperature of the set substrate is maintained at, for example, 120 ° C. (step S1). Then, the substrate W is inserted into the apparatus.
Is loaded (step S2), and as shown in FIG. 1A, the lift pins 16 are lifted and the substrate W is supported on the lift pins 16, and then the lift pins 16 are lowered, whereby (b) in FIG. As shown in FIG.
6 to the upper surface of the heating plate 10 (step S3).
-1). At the same time, the position sensor 22 detects that the substrate W is placed on the heating plate 10, closes the contact 22a of the position sensor 22, activates the timer 34,
The timer contact 34a is closed, and the second thyristor 30 is turned on. By this, until then PID
The controller 32 switches from the state in which the output to the heater 24 is PID controlled to the state in which the heater 24 is drive-controlled at a fixed maximum output (step S3-2). Then, by driving the heater 24 at the fixed maximum output, the temperature of the heating plate 10 rises above the set temperature (120 ° C.) (step S4). At this time, the temperature of the substrate W placed on the heating plate 10 also gradually increases due to heat conduction from the heating plate 10.
【００２６】タイマー３４が作動してから、すなわち、
ヒータ２４への出力がＰＩＤ制御から出力固定制御へと
切り換わった時点から、タイマー３４に設定された設定
時間が経過すると、タイマー接点３４ａが開いて、第２
サイリスタ３０がオンからオフへ切り換わる。これによ
り、固定の最大出力でヒータ２４を駆動していた状態か
ら再びＰＩＤコントローラ３２によりヒータ２４への出
力を制御する状態へと切り換わる（ステップＳ５）。こ
の時、加熱板１０の温度は設定温度（１２０℃）以上と
なっているため、ＰＩＤ制御に切り換わることにより、
加熱板１０の温度が設定温度に向かって低下する（ステ
ップＳ６）。この間も、加熱板１０上の基板Ｗの温度
は、加熱板１０から基板Ｗへの熱伝導により設定温度に
向かって上昇する。そして、ＰＩＤ制御によって加熱板
１０の温度が設定温度に調節され、また、基板Ｗの温度
が所定の加熱処理温度（１２０℃）に到達する（ステッ
プＳ７）。以後、加熱板１０の温度はＰＩＤ制御によっ
て設定温度に保持され、基板Ｗは１２０℃の温度で加熱
処理される（ステップＳ８）。After the timer 34 has been activated,
When the set time set in the timer 34 elapses from the time when the output to the heater 24 is switched from the PID control to the fixed output control, the timer contact 34a opens and the second
The thyristor 30 switches from on to off. As a result, the state where the heater 24 is driven with the fixed maximum output is switched again to the state where the output to the heater 24 is controlled by the PID controller 32 (step S5). At this time, since the temperature of the heating plate 10 is equal to or higher than the set temperature (120 ° C.), by switching to the PID control,
The temperature of the heating plate 10 decreases toward the set temperature (Step S6). Also during this time, the temperature of the substrate W on the heating plate 10 increases toward the set temperature due to heat conduction from the heating plate 10 to the substrate W. Then, the temperature of the heating plate 10 is adjusted to the set temperature by the PID control, and the temperature of the substrate W reaches a predetermined heating processing temperature (120 ° C.) (Step S7). Thereafter, the temperature of the heating plate 10 is maintained at the set temperature by the PID control, and the substrate W is heated at a temperature of 120 ° C. (Step S8).
【００２７】基板Ｗの加熱処理が終了すると、リフトピ
ン１６が上昇して、基板Ｗは、加熱板１０上からリフト
ピン１６上へ移し替えられ、加熱板１０の上面から離間
させられて装置内から搬出される（ステップＳ９）。そ
して、次に加熱処理すべき基板Ｗが装置内へ搬入されて
（ステップＳ２）、上記したステップＳ３−１、３−２
からステップＳ９までの操作が繰り返され、すべての基
板の加熱処理が終了すると（ステップＳ１０）、一連の
処理が終了する。When the heating process of the substrate W is completed, the lift pins 16 are raised, the substrate W is transferred from the heating plate 10 to the lift pins 16, separated from the upper surface of the heating plate 10, and carried out of the apparatus. Is performed (step S9). Then, the substrate W to be heated next is carried into the apparatus (step S2), and the above-described steps S3-1 and S2-2 are performed.
The operation from step S9 to step S9 is repeated, and when the heating processing of all the substrates is completed (step S10), a series of processing ends.
【００２８】以上のような基板の加熱処理動作における
加熱板１０の温度変化および基板Ｗの温度変化の様子を
図４に示す。図４において、曲線Ｉが加熱板１０の温度
変化の状態を示し、曲線IIが基板Ｗの温度変化の状態を
示す。また、ｔ１は、基板Ｗが加熱板１０上に載置され
て、ＰＩＤコントローラ３２によりヒータ２４への出力
がＰＩＤ制御されていた状態から固定の最大出力でヒー
タ２４が駆動される状態へと切り換わった時点（ステッ
プＳ３−１およびＳ３−２）を示し、ｔ２は、固定の最
大出力でヒータ２４が駆動されていた状態から再びＰＩ
Ｄコントローラ３２によりヒータ２４への出力が制御さ
れる状態へと切り換わった時点（ステップＳ５）を示し
ている。また、ｔ３は、基板Ｗの温度が所定の加熱処理
温度（１２０℃）に到達した時点（ステップＳ７）を示
している。そして、Ｔ13は、加熱板１０上に基板Ｗが載
置された時点ｔ１から基板Ｗの温度が所定の加熱処理温
度に到達した時点ｔ３までの時間であり、この到達時間
Ｔ13は、従来の加熱処理方法によった場合の到達時間Ｔ
ab（図５参照）に比べて短くなる。また、図４におい
て、Ｃで示した範囲は、ＰＩＤコントローラ３２により
ヒータ２４への出力がＰＩＤ制御されている時間帯を示
し、Ｆで示した範囲は、固定の最大出力でヒータ２４が
駆動制御されている時間帯を示している。FIG. 4 shows how the temperature of the heating plate 10 and the temperature of the substrate W change in the above-described substrate heating operation. In FIG. 4, a curve I indicates a state of a temperature change of the heating plate 10, and a curve II indicates a state of a temperature change of the substrate W. Further, at time t1, the state in which the substrate W is placed on the heating plate 10 and the output to the heater 24 is controlled by the PID controller 32 from the PID control is switched to a state in which the heater 24 is driven at a fixed maximum output. The time (steps S3-1 and S3-2) at which the heater 24 has been driven is switched from the state in which the heater 24 was driven at the fixed maximum output to the time PI.
The timing at which the output to the heater 24 is controlled by the D controller 32 (step S5) is shown. Further, t3 indicates a time point (step S7) when the temperature of the substrate W reaches a predetermined heat treatment temperature (120 ° C.). Then, T 13 is the time from time t1 when the substrate W is placed on the heating plate 10 until time t3 the temperature of the substrate W has reached a predetermined heat treatment temperature, the arrival time T 13 is conventionally Time T when using the heat treatment method
ab (see FIG. 5). In FIG. 4, a range indicated by C indicates a time period during which the output to the heater 24 is PID-controlled by the PID controller 32, and a range indicated by F indicates that the heater 24 is controlled by the heater 24 at a fixed maximum output. Shows the time zone that is being used.
【００２９】固定の最大出力でヒータ２４を駆動する時
間としてタイマー３４に設定する設定時間は、装置内へ
搬入されて加熱板１０上に載置された直後の基板Ｗ、例
えば２０℃の基板Ｗを所定の加熱処理温度（１２０℃）
まで上昇させる際に加熱板１０から基板Ｗによって吸収
される熱量を算出して、その熱量に見合う分だけ加熱板
１０に熱量を与えることができる時間とすればよい。The set time set in the timer 34 as the time for driving the heater 24 at a fixed maximum output is the substrate W immediately after being carried into the apparatus and placed on the heating plate 10, for example, the substrate W at 20 ° C. At a predetermined heat treatment temperature (120 ° C)
The amount of heat absorbed by the substrate W from the heating plate 10 when the heating plate 10 is raised to the maximum may be calculated, and the heat amount may be given to the heating plate 10 by an amount corresponding to the amount of heat.
【００３０】なお、上記した実施形態では、装置内へ搬
入された基板Ｗが加熱板１０上に載置された時点で、Ｐ
ＩＤコントローラ３２によりヒータ２４への出力をＰＩ
Ｄ制御していた状態から固定の最大出力でヒータ２４を
駆動制御する状態へ切り換えるようにし、その時点から
所定時間が経過した後に、再びＰＩＤコントローラ３２
によりヒータ２４への出力を制御する状態へ切り換える
ようにシーケンス制御するようにしたが、別のシーケン
スにより、例えば、基板Ｗの加熱処理が終了してリフト
ピンを上昇させるタイミングで、ＰＩＤコントローラ３
２によるヒータ２４のＰＩＤ制御状態から固定の最大出
力でヒータ２４を駆動制御する状態へ切り換えるように
して、加熱板１０上に載置された直後の基板Ｗによって
加熱板１０から吸収される熱量に見合う分だけ加熱板１
０に熱量を予め与え、加熱板を設定温度（１２０℃）以
上の温度に上昇させておき、ＰＩＤ制御から出力固定制
御への切換え時点から基板の入替え時間に相当する時間
が経過した後に、再びＰＩＤコントローラ３２によりヒ
ータ２４への出力を制御する状態へ切り換え、そのタイ
ミングで次の基板Ｗが加熱板１０上に載置されて、次の
基板Ｗの昇温が開始されるようにしてもよい。In the above embodiment, when the substrate W loaded into the apparatus is placed on the heating plate 10,
The output to the heater 24 by the ID controller 32 is PI
D control is switched to a state in which the heater 24 is driven and controlled at a fixed maximum output. After a predetermined time has elapsed from that point, the PID controller 32 is switched again.
Is controlled to switch to a state in which the output to the heater 24 is controlled by the PID controller 3 in another sequence, for example, at the timing when the heating process of the substrate W is completed and the lift pins are raised.
2 is switched from the PID control state of the heater 24 to the state in which the heater 24 is driven and controlled at a fixed maximum output, so that the amount of heat absorbed from the heating plate 10 by the substrate W immediately after being placed on the heating plate 10 is reduced. Heating plate 1
0 is given in advance, the temperature of the heating plate is raised to a temperature equal to or higher than the set temperature (120 ° C.). The PID controller 32 may switch to a state in which the output to the heater 24 is controlled, and at that timing, the next substrate W may be placed on the heating plate 10 and the temperature of the next substrate W may be increased. .
【００３１】[0031]
【発明の効果】請求項１に係る発明の基板加熱処理方法
によると、基板が搬入されて加熱板上に載置された後基
板の温度が所定の加熱処理温度に到達するまでの時間が
短縮され、また、加熱処理温度の設定を変更したとき
に、加熱板の温度が変更後の加熱処理温度に到達するま
での時間が短縮されるので、装置のスループットを向上
させることができ、また、複数枚の基板を連続して加熱
処理したときに、各基板間で熱処理履歴に差を生じない
で、各基板間で加熱処理品質がばらつくことがないの
で、複数枚の基板を均一に加熱処理することができる。According to the substrate heat treatment method of the first aspect of the present invention, the time required for the substrate temperature to reach the predetermined heat treatment temperature after the substrate is carried in and placed on the heating plate is reduced. In addition, when the setting of the heat treatment temperature is changed, the time until the temperature of the heating plate reaches the changed heat treatment temperature is reduced, so that the throughput of the apparatus can be improved, When a plurality of substrates are continuously heated, there is no difference in the heat treatment history between the substrates, and the quality of the heat treatment does not vary between the substrates. can do.
【００３２】請求項２に係る発明の基板加熱処理方法で
は、何らかの原因により、基板が加熱処理されて加熱板
上から搬出されてから次の基板が加熱板上へ搬入される
までの時間がばらつくようなことがあっても、すべての
基板で熱処理履歴が同一になり、複数枚の基板を均一に
加熱処理することが可能となる。In the substrate heat treatment method according to the second aspect of the present invention, the time from when the substrate is heated and unloaded from the heating plate to when the next substrate is loaded onto the heating plate varies for some reason. Even in such a case, the heat treatment history becomes the same for all the substrates, and a plurality of substrates can be uniformly heat-treated.
【００３２】請求項３に係る発明の基板加熱処理方法で
は、加熱処理された基板が加熱板上から搬出されて次に
加熱処理すべき基板が加熱板上へ搬入されるまでの期間
を含めて、加熱板の温度を所定の加熱処理温度に精度良
く維持することができるので、基板の加熱処理品質を向
上させることができる。In the substrate heat treatment method according to the third aspect of the present invention, the heat treatment includes a period from when the heat-treated substrate is unloaded from the heating plate to when the next substrate to be heat-treated is loaded onto the heating plate. Since the temperature of the heating plate can be accurately maintained at a predetermined temperature, the quality of the substrate heat treatment can be improved.
【００３３】請求項４に係る発明の基板加熱処理装置を
使用すると、請求項１に係る発明の基板加熱処理方法を
好適に実施することができて、スループットを向上させ
ることができ、また、複数枚の基板を連続して加熱処理
したときに、複数枚の基板を均一に加熱処理することが
できる。When the substrate heating apparatus according to the fourth aspect of the present invention is used, the substrate heating processing method according to the first aspect of the present invention can be suitably performed, thereby improving the throughput. When a plurality of substrates are continuously subjected to heat treatment, a plurality of substrates can be uniformly subjected to heat treatment.
【００３４】請求項５に係る発明の基板加熱処理装置を
使用すると、請求項２に係る発明の基板加熱処理方法を
好適に実施することができ、何らかの原因により、基板
が加熱処理されて加熱板上から搬出されてから次の基板
が加熱板上へ搬入されるまでの時間がばらつくようなこ
とがあっても、複数枚の基板を均一に加熱処理すること
が可能となる。By using the substrate heat treatment apparatus according to the fifth aspect of the present invention, the substrate heat treatment method according to the second aspect of the present invention can be suitably carried out. Even if the time from when the substrate is unloaded from above to when the next substrate is loaded onto the heating plate varies, it is possible to heat the plurality of substrates uniformly.
【００３５】請求項６に係る発明の基板加熱処理装置を
使用すると、請求項３に係る発明の基板加熱処理方法を
好適に実施することができて、基板の加熱処理品質を向
上させることができる。By using the substrate heat treatment apparatus according to the sixth aspect of the present invention, the substrate heat treatment method according to the third aspect of the invention can be suitably performed, and the quality of the substrate heat treatment can be improved. .
【図１】この発明に係る基板加熱処理方法を実施するの
に使用される基板加熱処理装置の構成の１例を示す要部
の概略正面図である。FIG. 1 is a schematic front view of a main part showing an example of a configuration of a substrate heating apparatus used to carry out a substrate heating processing method according to the present invention.
【図２】図１に示した装置の回路構成図である。FIG. 2 is a circuit configuration diagram of the device shown in FIG.
【図３】図１および図２に示した構成の基板加熱処理装
置を使用して基板を加熱処理する動作を説明するための
フローチャートである。FIG. 3 is a flowchart for explaining an operation of heating a substrate using the substrate heating apparatus having the configuration shown in FIGS. 1 and 2;
【図４】図１および図２に示した構成の基板加熱処理装
置による基板の加熱処理動作における加熱板の温度変化
および基板の温度変化の様子を示す図である。FIG. 4 is a diagram showing a state of a temperature change of a heating plate and a temperature change of a substrate in a substrate heating processing operation by the substrate heating processing apparatus having the configuration shown in FIGS. 1 and 2;
【図５】従来の方法によって基板を加熱処理したときの
加熱板および基板のそれぞれの温度変化の様子を示す図
である。FIG. 5 is a view showing a state of a temperature change of each of a heating plate and a substrate when a substrate is subjected to a heat treatment by a conventional method.
１０ 加熱板（ホットプレート） １２ 温度センサ １４ 加熱板の貫通孔 １６ リフトピン １８ 昇降板 ２０ エアーシリンダ ２２ 位置センサ ２２ａ 位置センサの接点 ２４ ヒータ ２６ 電源 ２８、３０ サイリスタ ３２ ＰＩＤコントローラ ３４ タイマー ３４ａ タイマー接点 Ｗ 基板 Reference Signs List 10 heating plate (hot plate) 12 temperature sensor 14 through hole of heating plate 16 lift pin 18 lifting plate 20 air cylinder 22 position sensor 22a contact of position sensor 24 heater 26 power supply 28, 30 thyristor 32 PID controller 34 timer 34a timer contact W substrate
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 21/324 Ｈ０１Ｌ 21/324 Ｔ ──────────────────────────────────────────────────の Continued on front page (51) Int.Cl. 6 Identification code FI H01L 21/324 H01L 21/324 T
Claims (6)
上へ基板を搬入し、加熱板の上面に基板を接触または近
接させて一定時間保持して、基板を加熱処理した後、加
熱板上から基板を搬出し、この熱処理サイクルを繰り返
す基板加熱処理方法において、 前記熱処理サイクル内において、前記加熱板を固定出力
で加熱する状態と自動温度調節して加熱する状態とを切
り換えることを特徴とする基板加熱処理方法。A substrate is carried into a heating plate heated to a predetermined heat treatment temperature, the substrate is kept in contact with or close to the upper surface of the heating plate for a predetermined time, and after heating the substrate, the heating plate is heated. In the substrate heat treatment method in which the substrate is carried out from above and the heat treatment cycle is repeated, in the heat treatment cycle, a state in which the heating plate is heated at a fixed output and a state in which the heating plate is heated by automatic temperature adjustment are switched. Substrate heat treatment method.
せた時点で自動温度調節加熱状態から固定出力加熱状態
へ切り換え、その切換え時点から所定時間経過後に固定
出力加熱状態から自動温度調節加熱状態へ切り換えて、
その自動温度調節加熱状態を、基板が加熱処理された後
加熱板上から搬出され次に加熱処理すべき基板が加熱板
上へ搬入されて加熱板の上面に接触または近接させられ
るまで継続させる請求項１記載の基板加熱処理方法。2. When the substrate is brought into contact with or close to the upper surface of the heating plate, the state is switched from the automatic temperature control heating state to the fixed output heating state, and after a lapse of a predetermined time from the switching point, the fixed output heating state is switched to the automatic temperature control heating state. Switch to
The automatic temperature control heating state is continued until the substrate is heated and then unloaded from the heating plate and then the substrate to be heated is loaded onto the heating plate and brought into contact with or close to the upper surface of the heating plate. Item 2. The substrate heating treatment method according to Item 1.
り行われる請求項１または請求項２記載の基板加熱処理
方法。3. The substrate heating method according to claim 1, wherein the automatic temperature adjustment of the heating plate is performed by PID control.
し、基板を加熱する加熱板と、 この加熱板を加熱する加熱手段と、 この加熱手段を駆動制御して前記加熱板を所定の加熱処
理温度に調節する自動温度調節手段と、 基板を、前記加熱板の上面から上方へ離間した位置と加
熱板の上面に接触または近接した位置との間で昇降させ
る基板昇降手段とを備えた基板加熱処理装置において、 前記加熱手段を固定出力で駆動させて前記加熱板を前記
所定の加熱処理温度より高い温度に加熱する固定出力駆
動手段と、 前記自動温度調節手段による前記加熱手段の駆動制御と
前記固定出力駆動手段による加熱手段の駆動制御とを択
一的に切り換える切換え手段と、 この切換え手段を作動させる作動手段とを設けたことを
特徴とする基板加熱処理装置。4. A heating plate for heating the substrate by placing the substrate on or in contact with the upper surface, heating means for heating the heating plate, and controlling the heating means to drive the heating plate to a predetermined position. Automatic temperature control means for adjusting the temperature of the heat treatment; and substrate elevating means for elevating the substrate between a position separated upward from the upper surface of the heating plate and a position in contact with or close to the upper surface of the heating plate. In the substrate heating apparatus, a fixed output driving unit that drives the heating unit with a fixed output to heat the heating plate to a temperature higher than the predetermined heating processing temperature; and a drive control of the heating unit by the automatic temperature adjustment unit. A substrate heating processing apparatus, comprising: switching means for selectively switching between driving control of the heating means by the fixed output driving means; and operating means for operating the switching means.
せた時点で作動手段により切換え手段を作動させて自動
温度調節手段による加熱手段の駆動制御から固定出力駆
動手段による加熱手段の駆動制御へ切り換え、その切換
え時点から所定時間経過後に作動手段により切換え手段
を作動させて固定出力駆動手段による加熱手段の駆動制
御から自動温度調節手段による加熱手段の駆動制御へ切
り換えて、その自動温度調節手段による加熱手段の駆動
制御を、基板が加熱処理された後加熱板上から搬出され
次に加熱処理すべき基板が加熱板上へ搬入されて加熱板
の上面に接触または近接させられるまで継続させる請求
項４記載の基板加熱処理装置。5. When the substrate is brought into contact with or close to the upper surface of the heating plate, the switching means is operated by the operating means to change the driving control of the heating means by the automatic temperature adjusting means to the driving control of the heating means by the fixed output driving means. The switching means is operated by the operating means after a lapse of a predetermined time from the switching time, and the driving control of the heating means by the fixed output driving means is switched to the driving control of the heating means by the automatic temperature adjusting means. The driving control of the heating means is continued until the substrate to be heated is carried out from the heating plate after the substrate is subjected to the heat treatment and then the substrate to be subjected to the heat treatment is carried into the heating plate and brought into contact with or close to the upper surface of the heating plate. 5. The substrate heating apparatus according to 4.
制御がＰＩＤ制御である請求項４または請求項５記載の
基板加熱処理装置。6. The substrate heating apparatus according to claim 4, wherein the drive control of the heating means by the automatic temperature adjustment means is PID control.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24782397A JP3933765B2 (en) | 1997-08-27 | 1997-08-27 | Substrate heat treatment method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24782397A JP3933765B2 (en) | 1997-08-27 | 1997-08-27 | Substrate heat treatment method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1174187A true JPH1174187A (en) | 1999-03-16 |
| JP3933765B2 JP3933765B2 (en) | 2007-06-20 |
Family
ID=17169203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24782397A Expired - Fee Related JP3933765B2 (en) | 1997-08-27 | 1997-08-27 | Substrate heat treatment method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3933765B2 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6780795B2 (en) | 2002-03-20 | 2004-08-24 | Tokyo Electron Limited | Heat treatment apparatus for preventing an initial temperature drop when consecutively processing a plurality of objects |
| KR100451282B1 (en) * | 2001-12-22 | 2004-10-06 | 동부전자 주식회사 | Heater System for Wafer |
| US7151239B2 (en) | 2004-05-24 | 2006-12-19 | Tokyo Electron Limited | Heat treating apparatus and heat treating method |
| US7241633B2 (en) | 2003-06-16 | 2007-07-10 | Tokyo Electron Limited | Heat treatment apparatus and heat treatment method |
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| JP2008135738A (en) * | 2007-10-31 | 2008-06-12 | Hitachi Kokusai Electric Inc | Control method for semiconductor manufacturing equipment, and manufacturing equipment of semiconductor |
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| JP2011124353A (en) * | 2009-12-10 | 2011-06-23 | Tokyo Electron Ltd | Processing method of substrate, program, computer storage medium, and substrate processing system |
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1997
- 1997-08-27 JP JP24782397A patent/JP3933765B2/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100451282B1 (en) * | 2001-12-22 | 2004-10-06 | 동부전자 주식회사 | Heater System for Wafer |
| US6780795B2 (en) | 2002-03-20 | 2004-08-24 | Tokyo Electron Limited | Heat treatment apparatus for preventing an initial temperature drop when consecutively processing a plurality of objects |
| DE102004029102B4 (en) * | 2003-06-16 | 2013-07-18 | Tokyo Electron Ltd. | Substrate processing device and substrate processing method |
| US7241633B2 (en) | 2003-06-16 | 2007-07-10 | Tokyo Electron Limited | Heat treatment apparatus and heat treatment method |
| US7151239B2 (en) | 2004-05-24 | 2006-12-19 | Tokyo Electron Limited | Heat treating apparatus and heat treating method |
| JP2007234645A (en) * | 2006-02-27 | 2007-09-13 | Tokyo Seimitsu Co Ltd | Prober temperature controller and control method |
| KR100842027B1 (en) | 2007-07-24 | 2008-06-27 | 세메스 주식회사 | Aligning apparatus and method for aligning a wafer using the same |
| JP2008135738A (en) * | 2007-10-31 | 2008-06-12 | Hitachi Kokusai Electric Inc | Control method for semiconductor manufacturing equipment, and manufacturing equipment of semiconductor |
| JP2011124353A (en) * | 2009-12-10 | 2011-06-23 | Tokyo Electron Ltd | Processing method of substrate, program, computer storage medium, and substrate processing system |
| JP2011222834A (en) * | 2010-04-12 | 2011-11-04 | Hoya Corp | Baking apparatus, method for forming resist pattern, method for manufacturing photo mask, and method for manufacturing mold for nanoimprint |
| CN106773654A (en) * | 2016-12-12 | 2017-05-31 | 中南大学 | A kind of Fractional Order PID Controller parameter optimization setting method |
| CN106773654B (en) * | 2016-12-12 | 2019-10-29 | 中南大学 | A kind of Fractional Order PID Controller parameter optimization setting method |
| CN107966886A (en) * | 2018-01-19 | 2018-04-27 | 京东方科技集团股份有限公司 | A kind of heating unit and lithographic equipment |
| CN111383960A (en) * | 2018-12-28 | 2020-07-07 | 细美事有限公司 | Apparatus and method for processing substrate |
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