JPH11512886A - 自己整列的に部分的に深く拡散したエミッタの太陽電池 - Google Patents
自己整列的に部分的に深く拡散したエミッタの太陽電池Info
- Publication number
- JPH11512886A JPH11512886A JP9514376A JP51437697A JPH11512886A JP H11512886 A JPH11512886 A JP H11512886A JP 9514376 A JP9514376 A JP 9514376A JP 51437697 A JP51437697 A JP 51437697A JP H11512886 A JPH11512886 A JP H11512886A
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- Prior art keywords
- emitter
- region
- aluminum
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 87
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 60
- 239000010703 silicon Substances 0.000 claims abstract description 60
- 238000002161 passivation Methods 0.000 claims abstract description 37
- 238000010438 heat treatment Methods 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 229910052709 silver Inorganic materials 0.000 claims abstract description 23
- 239000004332 silver Substances 0.000 claims abstract description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 87
- 239000002019 doping agent Substances 0.000 claims description 67
- 239000000463 material Substances 0.000 claims description 66
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 14
- 230000003667 anti-reflective effect Effects 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 56
- 229910052751 metal Inorganic materials 0.000 abstract description 35
- 239000002184 metal Substances 0.000 abstract description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 22
- 238000007650 screen-printing Methods 0.000 abstract description 12
- 239000006117 anti-reflective coating Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 90
- 210000004027 cell Anatomy 0.000 description 80
- 230000008569 process Effects 0.000 description 29
- 230000006798 recombination Effects 0.000 description 23
- 238000005215 recombination Methods 0.000 description 23
- 239000011521 glass Substances 0.000 description 14
- 230000008901 benefit Effects 0.000 description 8
- 229910000838 Al alloy Inorganic materials 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 5
- 238000005247 gettering Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910000676 Si alloy Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 241001676573 Minium Species 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- WTDRDQBEARUVNC-LURJTMIESA-N L-DOPA Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C(O)=C1 WTDRDQBEARUVNC-LURJTMIESA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.太陽電池であって、 第1の表面と第2の表面とを有する半導体基板と、 前記第1の表面および第2の表面のうちの一方に、比較的低いドーパント濃度 で比較的浅い深さに形成された第1の複数のエミッタ領域と、第1の表面および 第2の表面のうちの前記一方に、前記第1の複数の領域よりも比較的高いドーパ ント濃度で前記第1の複数の領域よりもかなり深い深さまで形成された第2の複 数のエミッタ領域とを備え、前記第1の複数の領域と第2の複数の領域が交互に 配置され、前記太陽電池がさらに、 表面電界を与えるために前記第1の表面および第2の表面のうちの前記他方に 形成されたドーパント領域と、 前記ドーパント領域上に形成されたオーミック接点と、 前記第2の複数のエミッタ領域上に形成されたアルミニウムを含む第1のパタ ーン化オーミック電極層とを備えることを特徴とする太陽電池。 2.前記半導体基板がn型ドープ・シリコンを備えることを特徴とする請求項1 に記載の発明。 3.前記第1の複数のエミッタ領域がホウ素などのp型ドーパント材料を使用し て形成されることを特徴とする請求項1に記載の発明。 4.前記ドーパント材料がホウ素であることを特徴とする請求項3に記載の発明 。 5.前記第2の複数のエミッタ領域がp+型ドーパント材料で形成されることを 特徴とする請求項1に記載の発明。 6.前記ドーパント材料がアルミニウムであることを特徴とする請求項5に記載 の発明。 7.前記ドーパント材料がアルミニウムとシリコンの合金であることを特徴とす る請求項5に記載の発明。 8.前記ドーパント領域がn+型ドーパント材料を使用して形成されることを特 徴とする請求項1に記載の発明。 9.前記ドーパント材料がリンであることを特徴とする請求項8に記載の発明。 10.前記第1の複数のエミッタ領域の深さは好ましくは約0.2μm以下であ ることを特徴とする請求項1に記載の発明。 11.前記第1の複数のエミッタ領域の濃度が約5×1018cm-3以下であるこ とを特徴とする請求項1に記載の発明。 12.前記第2の複数のエミッタ領域の最小深さは約2μmであることを特徴と する請求項1に記載の発明。 13.前記第2の複数のエミッタ領域の濃度が約1×1019cm-3以上であるこ とを特徴とする請求項1に記載の発明。 14.前記オーミック抵抗が銀で形成されることを特徴とする請求項1に記載の 発明。 15.さらに、前記第1のパターン化オーミック電極層上に、はんだ付け可能な オーミック材料の第2のパターン化層を含むことを特徴とする請求項1に記載の 発明。 16.前記はんだ付け可能な材料が銀であることを特徴とする請求項15に記載 の発明。 17.さらに、前記第1の表面および第2の表面のうちの前記一方上の、前記第 1のパターン化オーミック接触層の接点間の領域に形成されたパッシベーション 層を含むことを特徴とする請求項1に記載の発明。 18.さらに、前記パッシベーション層上に形成された反射防止層を含むことを 特徴とする請求項17に記載の発明。 19.自己整列局部深拡散エミッタを有する太陽電池を製造する方法であって、 (a)第1の表面と第2の表面とを有する半導体基板を用意するステップと、 (b)前記第1の表面および第2の表面のうちの一方に第1の導電型の比較的 浅いエミッタ領域を形成するステップと、 (c)前記第1の表面および第2の表面のうちの他方に第2の導電型の比較的 浅い電界領域を形成するステップと、 (d)前記第1の表面および第2の表面のうちの前記一方上にアルミニウムを 含むパターン化層を設けるステップと、 (e)前記基板を加熱し、前記基板の前記パターン化層の下の領域に前記第1 の導電型の複数の比較的深いエミッタ領域を形成するステップと、 (f)前記第1の表面および第2の表面のうちの前記他方とのオーミック接点 を設けるステップとを含む方法。 20.前記比較的浅いエミッタ領域がp+型ドーパント材料を使用して形成され ることを特徴とする請求項19に記載の方法。 21.前記比較的浅い電界領域がn+型ドーパント材料を使用して形成されるこ とを特徴とする請求項19に記載の方法。 22.さらに、アルミニウムを含む前記パターン化層上にオーミック・パターン 化層を付与するステップを含むことを特徴とする請求項19に記載の方法。 23.さらに、前記第1および第2の表面のうちの前記一方の、前記パターン化 層で覆われていない領域にパッシベーション層を形成するステップを含むことを 特徴とする請求項19に記載の方法。 24.さらに、前記パッシベーション層上に反射防止材料層を形成するステップ を含むことを特徴とする請求項19に記載の方法。 25.前記形成ステップ(b)が、深さが約0.2μm以下であるエミッタ領域 を設けるように行われることを特徴とする請求項19に記載の方法。 26.前記形成ステップ(b)が、ドーパント濃度が約5×1018cm-3以下で あるエミッタ領域を設けるように行われることを特徴とする請求項19に記載の 方法。 27.前記加熱ステップ(e)が、最小深さが約2μmであるエミッタ領域を設 けるように行われることを特徴とする請求項19に記載の方法。 28.前記加熱ステップ(e)が、ドーパント濃度が約1×1019cm-3以下で ある比較的深いエミッタ領域を設けるように行われることを特徴とする請求項1 9に記載の方法。 29.前記形成ステップ(d)が純粋なアルミニウムを用いて行われることを特 徴とする請求項19に記載の方法。 30.前記形成ステップ(d)が、アルミニウムとシリコンの混合物を使用して 行われることを特徴とする請求項19に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US483395P | 1995-10-05 | 1995-10-05 | |
US60/004,833 | 1995-10-05 | ||
PCT/US1996/015755 WO1997013280A1 (en) | 1995-10-05 | 1996-10-01 | Self-aligned locally deep- diffused emitter solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11512886A true JPH11512886A (ja) | 1999-11-02 |
Family
ID=21712748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9514376A Withdrawn JPH11512886A (ja) | 1995-10-05 | 1996-10-01 | 自己整列的に部分的に深く拡散したエミッタの太陽電池 |
Country Status (10)
Country | Link |
---|---|
US (1) | US5928438A (ja) |
EP (1) | EP0853822A4 (ja) |
JP (1) | JPH11512886A (ja) |
KR (1) | KR19990063990A (ja) |
CN (1) | CN1155107C (ja) |
AU (1) | AU701213B2 (ja) |
BR (1) | BR9610739A (ja) |
CA (1) | CA2232857C (ja) |
TW (1) | TW332345B (ja) |
WO (1) | WO1997013280A1 (ja) |
Cited By (6)
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JP2010123859A (ja) * | 2008-11-21 | 2010-06-03 | Kyocera Corp | 太陽電池素子および太陽電池素子の製造方法 |
JPWO2009110403A1 (ja) * | 2008-03-07 | 2011-07-14 | 国立大学法人東北大学 | 光電変換素子構造及び太陽電池 |
WO2012036146A1 (ja) * | 2010-09-13 | 2012-03-22 | 株式会社アルバック | 結晶太陽電池及びその製造方法 |
WO2012077568A1 (ja) * | 2010-12-06 | 2012-06-14 | 信越化学工業株式会社 | 太陽電池及び太陽電池モジュール |
JP2015130406A (ja) * | 2014-01-07 | 2015-07-16 | 三菱電機株式会社 | 光起電力装置およびその製造方法、光起電力モジュール |
US9887312B2 (en) | 2010-12-06 | 2018-02-06 | Shin-Etsu Chemical Co., Ltd. | Solar cell and solar-cell module |
Families Citing this family (137)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3722326B2 (ja) * | 1996-12-20 | 2005-11-30 | 三菱電機株式会社 | 太陽電池の製造方法 |
US6180869B1 (en) | 1997-05-06 | 2001-01-30 | Ebara Solar, Inc. | Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
US6339013B1 (en) | 1997-05-13 | 2002-01-15 | The Board Of Trustees Of The University Of Arkansas | Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells |
AU749022B2 (en) * | 1998-06-29 | 2002-06-13 | Unisearch Limited | A self aligning method for forming a selective emitter and metallization in a solar cell |
AUPP437598A0 (en) * | 1998-06-29 | 1998-07-23 | Unisearch Limited | A self aligning method for forming a selective emitter and metallization in a solar cell |
US6262359B1 (en) | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
TW419833B (en) * | 1999-07-23 | 2001-01-21 | Ind Tech Res Inst | Manufacturing method of solar cell |
TW419834B (en) * | 1999-09-01 | 2001-01-21 | Opto Tech Corp | Photovoltaic generator |
US6482261B2 (en) | 2000-12-29 | 2002-11-19 | Ebara Solar, Inc. | Magnetic field furnace |
KR100366349B1 (ko) * | 2001-01-03 | 2002-12-31 | 삼성에스디아이 주식회사 | 태양 전지 및 그의 제조 방법 |
KR100420030B1 (ko) * | 2001-04-23 | 2004-02-25 | 삼성에스디아이 주식회사 | 태양 전지의 제조 방법 |
US7709921B2 (en) | 2008-08-27 | 2010-05-04 | Udt Sensors, Inc. | Photodiode and photodiode array with improved performance characteristics |
US8120023B2 (en) | 2006-06-05 | 2012-02-21 | Udt Sensors, Inc. | Low crosstalk, front-side illuminated, back-side contact photodiode array |
US7655999B2 (en) | 2006-09-15 | 2010-02-02 | Udt Sensors, Inc. | High density photodiodes |
US7279731B1 (en) * | 2006-05-15 | 2007-10-09 | Udt Sensors, Inc. | Edge illuminated photodiodes |
US8686529B2 (en) * | 2010-01-19 | 2014-04-01 | Osi Optoelectronics, Inc. | Wavelength sensitive sensor photodiodes |
US7880258B2 (en) * | 2003-05-05 | 2011-02-01 | Udt Sensors, Inc. | Thin wafer detectors with improved radiation damage and crosstalk characteristics |
US8164151B2 (en) * | 2007-05-07 | 2012-04-24 | Osi Optoelectronics, Inc. | Thin active layer fishbone photodiode and method of manufacturing the same |
US7656001B2 (en) * | 2006-11-01 | 2010-02-02 | Udt Sensors, Inc. | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays |
US7576369B2 (en) | 2005-10-25 | 2009-08-18 | Udt Sensors, Inc. | Deep diffused thin photodiodes |
US8035183B2 (en) * | 2003-05-05 | 2011-10-11 | Udt Sensors, Inc. | Photodiodes with PN junction on both front and back sides |
US8519503B2 (en) * | 2006-06-05 | 2013-08-27 | Osi Optoelectronics, Inc. | High speed backside illuminated, front side contact photodiode array |
US7057254B2 (en) * | 2003-05-05 | 2006-06-06 | Udt Sensors, Inc. | Front illuminated back side contact thin wafer detectors |
US7256470B2 (en) * | 2005-03-16 | 2007-08-14 | Udt Sensors, Inc. | Photodiode with controlled current leakage |
US7170001B2 (en) * | 2003-06-26 | 2007-01-30 | Advent Solar, Inc. | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
US7649141B2 (en) * | 2003-06-30 | 2010-01-19 | Advent Solar, Inc. | Emitter wrap-through back contact solar cells on thin silicon wafers |
US7285720B2 (en) * | 2003-07-21 | 2007-10-23 | The Boeing Company, Inc. | Solar cell with high-temperature front electrical contact, and its fabrication |
US20050189015A1 (en) * | 2003-10-30 | 2005-09-01 | Ajeet Rohatgi | Silicon solar cells and methods of fabrication |
JP4549655B2 (ja) * | 2003-11-18 | 2010-09-22 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 機能性塗料 |
US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
US7144751B2 (en) * | 2004-02-05 | 2006-12-05 | Advent Solar, Inc. | Back-contact solar cells and methods for fabrication |
US7335555B2 (en) * | 2004-02-05 | 2008-02-26 | Advent Solar, Inc. | Buried-contact solar cells with self-doping contacts |
DE102004050269A1 (de) * | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
US8420435B2 (en) * | 2009-05-05 | 2013-04-16 | Solexel, Inc. | Ion implantation fabrication process for thin-film crystalline silicon solar cells |
US8637340B2 (en) | 2004-11-30 | 2014-01-28 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
US8399331B2 (en) | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
US20090107545A1 (en) * | 2006-10-09 | 2009-04-30 | Soltaix, Inc. | Template for pyramidal three-dimensional thin-film solar cell manufacturing and methods of use |
US7790574B2 (en) | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
EP1732142A1 (en) * | 2005-06-09 | 2006-12-13 | Shell Solar GmbH | Si solar cell and its manufacturing method |
CN101305471B (zh) * | 2005-11-02 | 2010-09-08 | 森托塞姆光伏股份有限公司 | 用于制造太阳能电池上的抗反射覆层的方法 |
US8076570B2 (en) | 2006-03-20 | 2011-12-13 | Ferro Corporation | Aluminum-boron solar cell contacts |
US8575474B2 (en) * | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
US20080145633A1 (en) * | 2006-06-19 | 2008-06-19 | Cabot Corporation | Photovoltaic conductive features and processes for forming same |
TWI487124B (zh) * | 2006-08-25 | 2015-06-01 | Sanyo Electric Co | 太陽電池模組及太陽電池模組的製造方法 |
US8168465B2 (en) | 2008-11-13 | 2012-05-01 | Solexel, Inc. | Three-dimensional semiconductor template for making high efficiency thin-film solar cells |
US20100304521A1 (en) * | 2006-10-09 | 2010-12-02 | Solexel, Inc. | Shadow Mask Methods For Manufacturing Three-Dimensional Thin-Film Solar Cells |
US8293558B2 (en) * | 2006-10-09 | 2012-10-23 | Solexel, Inc. | Method for releasing a thin-film substrate |
US8193076B2 (en) | 2006-10-09 | 2012-06-05 | Solexel, Inc. | Method for releasing a thin semiconductor substrate from a reusable template |
US20080264477A1 (en) * | 2006-10-09 | 2008-10-30 | Soltaix, Inc. | Methods for manufacturing three-dimensional thin-film solar cells |
US7999174B2 (en) | 2006-10-09 | 2011-08-16 | Solexel, Inc. | Solar module structures and assembly methods for three-dimensional thin-film solar cells |
US8035028B2 (en) * | 2006-10-09 | 2011-10-11 | Solexel, Inc. | Pyramidal three-dimensional thin-film solar cells |
US9178092B2 (en) | 2006-11-01 | 2015-11-03 | Osi Optoelectronics, Inc. | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays |
CA2568136C (en) * | 2006-11-30 | 2008-07-29 | Tenxc Wireless Inc. | Butler matrix implementation |
US20080216887A1 (en) * | 2006-12-22 | 2008-09-11 | Advent Solar, Inc. | Interconnect Technologies for Back Contact Solar Cells and Modules |
KR101346896B1 (ko) * | 2007-03-26 | 2013-12-31 | 엘지전자 주식회사 | Ibc형 태양전지의 제조방법 및 ibc형 태양전지 |
KR101623597B1 (ko) * | 2007-04-25 | 2016-05-23 | 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 | 은과 니켈 또는 은과 니켈 합금을 포함하는 후막 컨덕터 조성물 및 이로부터 제조된 태양 전지 |
DE602008003218D1 (de) * | 2007-05-07 | 2010-12-09 | Georgia Tech Res Inst | Herstellung eines hochwertigen rückseitigen kontakts mit lokaler rückseitiger siebdruckfläche |
WO2009026240A1 (en) * | 2007-08-17 | 2009-02-26 | Solexel, Inc. | Methods for liquid transfer coating of three-dimensional substrates |
US8309844B2 (en) * | 2007-08-29 | 2012-11-13 | Ferro Corporation | Thick film pastes for fire through applications in solar cells |
US9455362B2 (en) * | 2007-10-06 | 2016-09-27 | Solexel, Inc. | Laser irradiation aluminum doping for monocrystalline silicon substrates |
WO2009064870A2 (en) * | 2007-11-13 | 2009-05-22 | Advent Solar, Inc. | Selective emitter and texture processes for back contact solar cells |
US20100053802A1 (en) * | 2008-08-27 | 2010-03-04 | Masaki Yamashita | Low Power Disk-Drive Motor Driver |
US20090223549A1 (en) * | 2008-03-10 | 2009-09-10 | Calisolar, Inc. | solar cell and fabrication method using crystalline silicon based on lower grade feedstock materials |
US20090239363A1 (en) * | 2008-03-24 | 2009-09-24 | Honeywell International, Inc. | Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes |
DE102008017647A1 (de) | 2008-04-04 | 2009-10-29 | Centrotherm Photovoltaics Technology Gmbh | Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung |
DE102008019402A1 (de) | 2008-04-14 | 2009-10-15 | Gebr. Schmid Gmbh & Co. | Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat |
EP2289110A2 (en) * | 2008-04-29 | 2011-03-02 | Applied Materials, Inc. | Photovoltaic modules manufactured using monolithic module assembly techniques |
US20090286349A1 (en) * | 2008-05-13 | 2009-11-19 | Georgia Tech Research Corporation | Solar cell spin-on based process for simultaneous diffusion and passivation |
US20100144080A1 (en) * | 2008-06-02 | 2010-06-10 | Solexel, Inc. | Method and apparatus to transfer coat uneven surface |
DE102008027851A1 (de) | 2008-06-11 | 2009-12-24 | Centrotherm Photovoltaics Technology Gmbh | Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung |
US20100035422A1 (en) * | 2008-08-06 | 2010-02-11 | Honeywell International, Inc. | Methods for forming doped regions in a semiconductor material |
KR101135337B1 (ko) * | 2008-08-07 | 2012-04-17 | 교토 에렉스 가부시키가이샤 | 태양전지소자의 전극형성용 도전성 페이스트, 태양전지소자 및 그 태양전지소자의 제조방법 |
US7897434B2 (en) * | 2008-08-12 | 2011-03-01 | International Business Machines Corporation | Methods of fabricating solar cell chips |
US8053867B2 (en) * | 2008-08-20 | 2011-11-08 | Honeywell International Inc. | Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants |
JP2012503314A (ja) * | 2008-09-15 | 2012-02-02 | オーエスアイ.オプトエレクトロニクス.インコーポレイテッド | 浅いn+層を有する薄い能動層フィッシュボーン・フォトダイオードとその製造方法 |
US7951696B2 (en) * | 2008-09-30 | 2011-05-31 | Honeywell International Inc. | Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes |
KR100997669B1 (ko) | 2008-11-04 | 2010-12-02 | 엘지전자 주식회사 | 스크린 인쇄법을 이용한 실리콘 태양전지 및 그 제조방법 |
US8288195B2 (en) * | 2008-11-13 | 2012-10-16 | Solexel, Inc. | Method for fabricating a three-dimensional thin-film semiconductor substrate from a template |
WO2010063003A1 (en) * | 2008-11-26 | 2010-06-03 | Solexel, Inc. | Truncated pyramid structures for see-through solar cells |
US8518170B2 (en) * | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
US9076642B2 (en) | 2009-01-15 | 2015-07-07 | Solexel, Inc. | High-Throughput batch porous silicon manufacturing equipment design and processing methods |
US8999058B2 (en) | 2009-05-05 | 2015-04-07 | Solexel, Inc. | High-productivity porous semiconductor manufacturing equipment |
US8926803B2 (en) * | 2009-01-15 | 2015-01-06 | Solexel, Inc. | Porous silicon electro-etching system and method |
US8906218B2 (en) | 2010-05-05 | 2014-12-09 | Solexel, Inc. | Apparatus and methods for uniformly forming porous semiconductor on a substrate |
MY162405A (en) * | 2009-02-06 | 2017-06-15 | Solexel Inc | Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template |
US8828517B2 (en) | 2009-03-23 | 2014-09-09 | Solexel, Inc. | Structure and method for improving solar cell efficiency and mechanical strength |
EP2419306B1 (en) * | 2009-04-14 | 2016-03-30 | Solexel, Inc. | High efficiency epitaxial chemical vapor deposition (cvd) reactor |
US9099584B2 (en) * | 2009-04-24 | 2015-08-04 | Solexel, Inc. | Integrated three-dimensional and planar metallization structure for thin film solar cells |
US9318644B2 (en) | 2009-05-05 | 2016-04-19 | Solexel, Inc. | Ion implantation and annealing for thin film crystalline solar cells |
US8399909B2 (en) | 2009-05-12 | 2013-03-19 | Osi Optoelectronics, Inc. | Tetra-lateral position sensing detector |
US8445314B2 (en) * | 2009-05-22 | 2013-05-21 | Solexel, Inc. | Method of creating reusable template for detachable thin film substrate |
US8551866B2 (en) * | 2009-05-29 | 2013-10-08 | Solexel, Inc. | Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing |
KR101225978B1 (ko) * | 2009-06-25 | 2013-01-24 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
US8324089B2 (en) * | 2009-07-23 | 2012-12-04 | Honeywell International Inc. | Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions |
CA2780913A1 (en) * | 2009-11-18 | 2011-05-26 | B-Solar Ltd. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
KR101146733B1 (ko) * | 2009-12-07 | 2012-05-17 | 엘지전자 주식회사 | 태양 전지 |
EP2510552A4 (en) | 2009-12-09 | 2014-11-05 | Solexel Inc | HIGHLY EFFICIENT PHOTOVOLTAIC BACK CONTACT STRUCTURES FOR SOLAR CELLS AND METHOD OF MANUFACTURING THEM BY USING SEMICONDUCTOR WAFERS |
KR101038967B1 (ko) * | 2009-12-21 | 2011-06-07 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
CN102844883B (zh) | 2010-02-12 | 2016-01-20 | 速力斯公司 | 用于制造光电池和微电子器件的半导体衬底的双面可重复使用的模板 |
KR101046219B1 (ko) * | 2010-04-02 | 2011-07-04 | 엘지전자 주식회사 | 선택적 에미터를 갖는 태양전지 |
US8859889B2 (en) | 2010-04-20 | 2014-10-14 | Kyocera Corporation | Solar cell elements and solar cell module using same |
KR101369282B1 (ko) | 2010-06-09 | 2014-03-04 | 솔렉셀, 인크. | 고생산성 박막 증착 방법 및 시스템 |
EP2398071B1 (en) | 2010-06-17 | 2013-01-16 | Imec | Method for forming a doped region in a semiconductor layer of a substrate and use of such method |
KR101203623B1 (ko) * | 2010-06-18 | 2012-11-21 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
WO2011162406A1 (ja) * | 2010-06-25 | 2011-12-29 | 京セラ株式会社 | 太陽電池素子およびその製造方法ならびに太陽電池モジュール |
WO2013055307A2 (en) | 2010-08-05 | 2013-04-18 | Solexel, Inc. | Backplane reinforcement and interconnects for solar cells |
KR101135584B1 (ko) * | 2010-08-13 | 2012-04-17 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
KR101196793B1 (ko) | 2010-08-25 | 2012-11-05 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
CN101950780B (zh) * | 2010-09-09 | 2012-08-08 | 百力达太阳能股份有限公司 | 选择性发射极太阳电池的制备方法 |
US9368655B2 (en) | 2010-12-27 | 2016-06-14 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
TWI493740B (zh) * | 2010-12-31 | 2015-07-21 | Motech Ind Inc | 太陽能電池結構與其製造方法 |
US20120174975A1 (en) * | 2011-01-10 | 2012-07-12 | Shin Myungjun | Solar cell and method for manufacturing the same |
US20140102523A1 (en) * | 2011-04-07 | 2014-04-17 | Newsouth Innovations Pty Limited | Hybrid solar cell contact |
EP2710639A4 (en) | 2011-05-20 | 2015-11-25 | Solexel Inc | SELF-ACTIVATED FRONT SURFACE POLARIZATION FOR A SOLAR CELL |
KR101258938B1 (ko) | 2011-07-25 | 2013-05-07 | 엘지전자 주식회사 | 태양 전지 |
US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
US8975170B2 (en) | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
US9583651B2 (en) | 2011-12-26 | 2017-02-28 | Solexel, Inc. | Systems and methods for enhanced light trapping in solar cells |
CN104040701B (zh) * | 2012-01-06 | 2018-01-26 | 日立化成株式会社 | 带钝化膜的半导体基板及其制造方法、以及太阳能电池元件及其制造方法 |
KR101315407B1 (ko) * | 2012-06-04 | 2013-10-07 | 한화케미칼 주식회사 | 에미터 랩 스루 태양 전지 및 이의 제조 방법 |
US9379258B2 (en) | 2012-11-05 | 2016-06-28 | Solexel, Inc. | Fabrication methods for monolithically isled back contact back junction solar cells |
NL2010116C2 (en) | 2013-01-11 | 2014-07-15 | Stichting Energie | Method of providing a boron doped region in a substrate and a solar cell using such a substrate. |
US8735204B1 (en) | 2013-01-17 | 2014-05-27 | Alliance For Sustainable Energy, Llc | Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication |
US8912615B2 (en) | 2013-01-24 | 2014-12-16 | Osi Optoelectronics, Inc. | Shallow junction photodiode for detecting short wavelength light |
US20140238478A1 (en) * | 2013-02-28 | 2014-08-28 | Suniva, Inc. | Back junction solar cell with enhanced emitter layer |
US8895416B2 (en) | 2013-03-11 | 2014-11-25 | Alliance For Sustainable Energy, Llc | Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material |
US9577134B2 (en) * | 2013-12-09 | 2017-02-21 | Sunpower Corporation | Solar cell emitter region fabrication using self-aligned implant and cap |
CN103956410A (zh) * | 2014-05-09 | 2014-07-30 | 苏州阿特斯阳光电力科技有限公司 | 一种n型背结太阳能电池的制备方法 |
CN104393095B (zh) * | 2014-09-25 | 2016-09-07 | 锦州华昌光伏科技有限公司 | n型硅太阳电池、其制备方法及铝蒸发扩散装置 |
TWI615987B (zh) * | 2015-12-16 | 2018-02-21 | 茂迪股份有限公司 | 太陽能電池及其製造方法 |
CN106328731A (zh) * | 2016-11-08 | 2017-01-11 | 刘锋 | 一种高转换效率的太阳能电池 |
TWI688109B (zh) * | 2018-10-26 | 2020-03-11 | 財團法人工業技術研究院 | 太陽能電池 |
CN109888058B (zh) * | 2019-03-04 | 2021-01-22 | 浙江正泰太阳能科技有限公司 | 一种太阳能电池及其制造方法 |
CN113206169A (zh) * | 2021-04-18 | 2021-08-03 | 安徽华晟新能源科技有限公司 | 一种铝吸杂方法和铝吸杂设备 |
CN116799080A (zh) * | 2021-04-26 | 2023-09-22 | 浙江晶科能源有限公司 | 光伏电池及其制作方法、光伏组件 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2841860A (en) * | 1952-08-08 | 1958-07-08 | Sylvania Electric Prod | Semiconductor devices and methods |
US2854363A (en) * | 1953-04-02 | 1958-09-30 | Int Standard Electric Corp | Method of producing semiconductor crystals containing p-n junctions |
NL270665A (ja) * | 1960-10-31 | 1900-01-01 | ||
US4070689A (en) * | 1975-12-31 | 1978-01-24 | Motorola Inc. | Semiconductor solar energy device |
DE2914506A1 (de) * | 1979-04-10 | 1980-10-16 | Siemens Ag | Verfahren zum herstellen von grossflaechigen, plattenfoermigen siliziumkristallen mit kolumnarstruktur |
DE3049376A1 (de) * | 1980-12-29 | 1982-07-29 | Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen | Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze |
JPS57132372A (en) * | 1981-02-09 | 1982-08-16 | Univ Tohoku | Manufacture of p-n junction type thin silicon band |
FR2505556B1 (fr) * | 1981-05-11 | 1986-07-25 | Labo Electronique Physique | Procede de fabrication de cellules solaires en silicium et cellules solaires ainsi obtenues |
JPS6215864A (ja) * | 1985-07-15 | 1987-01-24 | Hitachi Ltd | 太陽電池の製造方法 |
US4665277A (en) * | 1986-03-11 | 1987-05-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Floating emitter solar cell |
US4703553A (en) * | 1986-06-16 | 1987-11-03 | Spectrolab, Inc. | Drive through doping process for manufacturing low back surface recombination solar cells |
US5156978A (en) * | 1988-11-15 | 1992-10-20 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
-
1996
- 1996-10-01 CA CA002232857A patent/CA2232857C/en not_active Expired - Lifetime
- 1996-10-01 AU AU72039/96A patent/AU701213B2/en not_active Expired
- 1996-10-01 CN CNB96197446XA patent/CN1155107C/zh not_active Expired - Lifetime
- 1996-10-01 BR BR9610739A patent/BR9610739A/pt not_active IP Right Cessation
- 1996-10-01 EP EP96933220A patent/EP0853822A4/en not_active Withdrawn
- 1996-10-01 JP JP9514376A patent/JPH11512886A/ja not_active Withdrawn
- 1996-10-01 KR KR1019980702465A patent/KR19990063990A/ko not_active Application Discontinuation
- 1996-10-01 WO PCT/US1996/015755 patent/WO1997013280A1/en not_active Application Discontinuation
- 1996-10-04 US US08/726,279 patent/US5928438A/en not_active Expired - Lifetime
- 1996-10-15 TW TW085112578A patent/TW332345B/zh active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPWO2009110403A1 (ja) * | 2008-03-07 | 2011-07-14 | 国立大学法人東北大学 | 光電変換素子構造及び太陽電池 |
JP2010123859A (ja) * | 2008-11-21 | 2010-06-03 | Kyocera Corp | 太陽電池素子および太陽電池素子の製造方法 |
WO2012036146A1 (ja) * | 2010-09-13 | 2012-03-22 | 株式会社アルバック | 結晶太陽電池及びその製造方法 |
JP2012060080A (ja) * | 2010-09-13 | 2012-03-22 | Ulvac Japan Ltd | 結晶太陽電池及びその製造方法 |
WO2012077568A1 (ja) * | 2010-12-06 | 2012-06-14 | 信越化学工業株式会社 | 太陽電池及び太陽電池モジュール |
JP5626361B2 (ja) * | 2010-12-06 | 2014-11-19 | 信越化学工業株式会社 | 太陽電池及び太陽電池モジュール、並びに太陽電池の製造方法 |
US9224888B2 (en) | 2010-12-06 | 2015-12-29 | Shin-Etsu Chemical Co., Ltd. | Solar cell and solar-cell module |
US9887312B2 (en) | 2010-12-06 | 2018-02-06 | Shin-Etsu Chemical Co., Ltd. | Solar cell and solar-cell module |
JP2015130406A (ja) * | 2014-01-07 | 2015-07-16 | 三菱電機株式会社 | 光起電力装置およびその製造方法、光起電力モジュール |
Also Published As
Publication number | Publication date |
---|---|
EP0853822A1 (en) | 1998-07-22 |
EP0853822A4 (en) | 1999-08-18 |
CA2232857A1 (en) | 1997-04-10 |
CN1198841A (zh) | 1998-11-11 |
MX9802174A (es) | 1998-08-30 |
CN1155107C (zh) | 2004-06-23 |
WO1997013280A1 (en) | 1997-04-10 |
AU7203996A (en) | 1997-04-28 |
KR19990063990A (ko) | 1999-07-26 |
TW332345B (en) | 1998-05-21 |
BR9610739A (pt) | 1999-07-13 |
US5928438A (en) | 1999-07-27 |
CA2232857C (en) | 2003-05-13 |
AU701213B2 (en) | 1999-01-21 |
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