JPH1146086A - Electromagnetic wave shielding film - Google Patents
Electromagnetic wave shielding filmInfo
- Publication number
- JPH1146086A JPH1146086A JP19956097A JP19956097A JPH1146086A JP H1146086 A JPH1146086 A JP H1146086A JP 19956097 A JP19956097 A JP 19956097A JP 19956097 A JP19956097 A JP 19956097A JP H1146086 A JPH1146086 A JP H1146086A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- electromagnetic wave
- wave shielding
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、ＯＡ機器のディ
スプレイやテレビ画面、シールドルームの覗き窓や建て
屋の窓など、透明性かつ電磁波シールド特性が要求され
る部材に施される電磁波シールド膜に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electromagnetic wave shielding film applied to a member requiring transparency and electromagnetic wave shielding characteristics, such as a display of an OA equipment, a television screen, a peep window of a shield room, and a window of a building. .
【０００２】[0002]
【従来の技術】近年、電磁波が人体に与える悪影響が懸
念されており、電磁波防止の処理が必要になっている。
特に透明性が必要な部分の電磁波シールドには、十分な
透明性と高いシールド特性が望まれている。2. Description of the Related Art In recent years, there has been a concern about the adverse effects of electromagnetic waves on the human body, and it is necessary to take measures to prevent electromagnetic waves.
In particular, a sufficient transparency and a high shielding property are desired for an electromagnetic wave shield in a portion requiring transparency.
【０００３】従来より、電気・電子機器には種々の電磁
波シールドが施されてきた。パソコンや携帯電話などの
プラスチック筐体などには、導電性金属を混入したり、
導電性塗料を塗布したり、湿式メッキ・真空蒸着より金
属薄膜をコーティングする方法でシールド特性をもたせ
ていた。例えば、シールドルームや電磁波防止ビルに使
用される透明な窓は、金属の薄いメッシュシートを２枚
のガラス板で挟み込んでシールド特性を得ていた。しか
し、２枚のガラス板を使用するので板厚が厚く施工性が
悪かったり、高価であった。Conventionally, various electromagnetic wave shields have been applied to electric and electronic devices. Mixing conductive metals in plastic housings such as personal computers and mobile phones,
Shielding properties have been provided by applying a conductive paint or coating a metal thin film by wet plating or vacuum evaporation. For example, a transparent window used in a shield room or an electromagnetic wave prevention building has a shielding property by sandwiching a thin metal mesh sheet between two glass plates. However, since two glass plates are used, the thickness is large, the workability is poor, and the cost is high.
【０００４】これを解決するものとして、ＩＴＯ膜など
透明導電膜を透明な部材表面にコーティングすることも
なされているが、金属並の導電性がはないためにシール
ド特性が不十分であった。また、金属をメッキや蒸着な
どで薄くコーティングすることもなされているが、やは
りシールド効果が低く、また膜厚が薄いために耐候性や
耐食性などに問題があった。In order to solve this problem, a transparent conductive film such as an ITO film is coated on the surface of a transparent member. However, since the conductive material is not as conductive as metal, the shielding properties are insufficient. In addition, metal is thinly coated by plating, vapor deposition, or the like, but also has a low shielding effect, and has a problem in weather resistance and corrosion resistance due to its thin film thickness.
【０００５】[0005]
【発明が解決しようとする課題】そこで本発明は、金属
膜あるいは合金膜と透明導電性インクを積層することに
より、シールド特性に優れ、且つ透明性に優れた電磁波
シールド膜を安価に提供することを目的とする。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a low-cost electromagnetic wave shielding film having excellent shielding characteristics and excellent transparency by laminating a metal film or an alloy film and a transparent conductive ink. With the goal.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
の本発明の電磁波シールド膜は、透明性を有する部材上
に形成された電磁波シールド膜であって、第１層は金属
膜または合金膜であり、第２層はＩＴＯ膜であることを
特徴とする。According to the present invention, there is provided an electromagnetic wave shielding film formed on a transparent member, wherein the first layer is a metal film or an alloy film. Wherein the second layer is an ITO film.
【０００７】第１層の金属膜または合金膜は乾式法によ
り形成することができ、また、第２層のＩＴＯ膜はイン
ク法により形成することができる。The first layer metal film or alloy film can be formed by a dry method, and the second layer ITO film can be formed by an ink method.
【０００８】また、本発明の他の電磁波シールド膜は、
上記構成で更に、第１層の金属膜または合金膜の膜厚が
０．０１〜０．０５μｍであり、かつ、該第１層の透過
率が２０％以上であることを特徴とする。Further, another electromagnetic wave shielding film of the present invention comprises:
The above structure is further characterized in that the thickness of the metal film or the alloy film of the first layer is 0.01 to 0.05 μm, and the transmittance of the first layer is 20% or more.
【０００９】また、本発明の他の電磁波シールド膜は、
上記いずれかの構成で更に、第２層のＩＴＯ膜の膜厚が
０．０７〜０．６０μｍであることを特徴とする。Further, another electromagnetic wave shielding film of the present invention comprises:
In any one of the above structures, the thickness of the second-layer ITO film is 0.07 to 0.60 μm.
【００１０】[0010]
【発明の実施の形態】本発明に用いられる部材は、透明
性を有したガラス、アクリル樹脂などで、例えばパソコ
ンのディスプレイやテレビ画面、シールドルームの覗き
窓や、建て屋の窓などに使用されているものなどがあ
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The members used in the present invention are made of transparent glass, acrylic resin or the like, and are used, for example, in personal computer displays, television screens, peep windows in shield rooms, and windows in buildings. There are things that are.
【００１１】第１層の金属膜または合金膜は、導電性の
あるものであれば良いが、比抵抗が高いものはシールド
特性が低いので、Ａｌ、Ｃｕ、Ａｇ、Ａｕなどの金属膜
またはこれらを含む合金膜が好ましい。また、耐食性や
機械的特性の面から、Ｎｉ、Ｃｒ、Ｔｉなどの金属膜ま
たはこれらを含む合金膜も好ましい。The metal film or alloy film of the first layer may be any film having conductivity, but a film having a high specific resistance has a low shielding property, so that a metal film such as Al, Cu, Ag, Au or the like may be used. Is preferable. Further, from the viewpoint of corrosion resistance and mechanical properties, a metal film of Ni, Cr, Ti or the like or an alloy film containing these is also preferable.
【００１２】膜厚はシールド特性と透明性に影響し、膜
厚が厚くなるほどシールド特性は高くなるが透明性は低
下する。そこで、第１層の膜厚は０．０１〜０．０５μ
ｍが望ましい。膜厚が０．０１μｍ以下ではシールド特
性が不十分であり、逆に０．０５μｍを超えて厚くなる
と透過率が２０％以下となり、透明性が不十分になるか
らである。The film thickness affects the shielding characteristics and transparency. As the film thickness increases, the shielding characteristics increase but the transparency decreases. Therefore, the thickness of the first layer is 0.01 to 0.05 μm.
m is desirable. If the film thickness is less than 0.01 μm, the shielding properties are insufficient. Conversely, if the film thickness exceeds 0.05 μm, the transmittance becomes 20% or less and the transparency becomes insufficient.
【００１３】第１層は、乾式法、例えば、真空蒸着法、
イオンプレーティング法、スパッタ法などのＰＶＤ法で
形成することが好ましい。湿式メッキ法などに比べ、乾
式法で形成された被膜は高純度化されるので、薄い被膜
でも十分なシールド効果が得られるからである。また、
特にＰＶＤ法では、前処理として不活性ガスによるボン
バード処理がコーティングと連続してできるため、基板
表面を荒らすことなく、高い密着力を得ることができ
る。The first layer is formed by a dry method, for example, a vacuum evaporation method,
It is preferably formed by a PVD method such as an ion plating method and a sputtering method. This is because a film formed by a dry method is highly purified as compared with a wet plating method or the like, so that a sufficient shielding effect can be obtained even with a thin film. Also,
In particular, in the PVD method, since a bombardment treatment with an inert gas can be performed as a pretreatment continuously with the coating, a high adhesion can be obtained without roughening the substrate surface.
【００１４】第１層だけでは耐候性や耐食性、機械的特
性の面で不十分である。また、より高いシールド特性を
得るために、第２層にＩＴＯ膜をインク法により形成す
る。ＩＴＯ膜は透明導電膜で、インク法以外にスパッタ
法によっても形成が可能であるが、コスト面でインク法
が有利である。The first layer alone is insufficient in terms of weather resistance, corrosion resistance and mechanical properties. Further, in order to obtain higher shielding characteristics, an ITO film is formed on the second layer by an ink method. The ITO film is a transparent conductive film and can be formed by a sputtering method other than the ink method, but the ink method is advantageous in terms of cost.
【００１５】第２層のＩＴＯ膜は、例えば、粒径５０ｎ
ｍ以下の粒子を粒子体積分率で５０％以上含み、膜体積
に対するＩＴＯ粒子の体積が３５〜７６％である被膜と
すればよい。平均粒径が５０ｎｍを超えると透明性が悪
くなるが、５０ｎｍ以下の粒子が５０％以上占める膜で
あれば高い透明性が得られる。また、膜体積に対するＩ
ＴＯ粒子が３５％以下では十分な導電度が得られない。The ITO film of the second layer has, for example, a particle size of 50 n.
m or less in terms of a particle volume fraction, and the volume of the ITO particles with respect to the film volume is 35 to 76%. If the average particle size exceeds 50 nm, the transparency deteriorates. However, if the film occupies 50% or more of particles having a size of 50 nm or less, high transparency can be obtained. Also, I to the film volume
If the TO particles content is 35% or less, sufficient conductivity cannot be obtained.
【００１６】さらに第２層のＩＴＯ膜の膜厚は、０．０
７〜０．６０μｍが望ましい。０．０７μｍ未満では十
分な導電度が得られず、０．６０μｍを超えて厚くなる
と透過率が低下するからである。Further, the thickness of the second ITO film is 0.0
7 to 0.60 μm is desirable. If the thickness is less than 0.07 μm, sufficient conductivity cannot be obtained, and if the thickness exceeds 0.60 μm, the transmittance decreases.
【００１７】第２層は好ましくはインク法で形成され
る。ここで「インク法」とは、ＩＴＯ微粒子を含有する
ＩＴＯインクを用いた膜形成法であるが、インク法であ
れば、ディップ法、スプレー法、スピン法その他公知の
いずれの塗布方法でも良い。The second layer is preferably formed by an ink method. Here, the "ink method" is a film forming method using an ITO ink containing ITO fine particles, but any known coating method such as a dipping method, a spray method, a spin method and the like may be used as long as the ink method is used.
【００１８】[0018]
【実施例】以下に実施例を示し、本発明をより詳しく説
明する。 実施例１ ・・・ １５０×１５０×４ｍｍのソーダガ
ラス基板をエタノールで超音波洗浄し、電子ビーム方式
のイオンプレーティング装置（神港精機製ＡＩＦ−８５
０ＳＢ）に該ガラス基板を設置し、真空度２×１０-5Ｔ
ｏｒｒまで排気した。その後、Ａｒガスを０．０３Ｔｏ
ｒｒまで導入し、対抗電極に−８００Ｖを印加し、グロ
ー放電中に基板表面を１０分間曝した。引き続き、ペレ
ット上のＣｕを電子ビームで溶解・蒸発させ、５秒間成
膜した。得られた被膜の膜厚は蛍光Ｘ線にて測定したと
ころ、０．０１８μｍであり、外観はハーフミラー状で
あった。The present invention will be described in more detail with reference to the following examples. Example 1 A 150 × 150 × 4 mm soda glass substrate was ultrasonically cleaned with ethanol, and an electron beam ion plating apparatus (AIF-85 manufactured by Shinko Seiki Co., Ltd.)
0SB) and place the glass substrate at a vacuum of 2 × 10 −5 T
evacuated to orr. After that, Ar gas is supplied to 0.03 To.
rr, and -800 V was applied to the counter electrode, and the substrate surface was exposed for 10 minutes during glow discharge. Subsequently, Cu on the pellet was dissolved and evaporated by an electron beam, and a film was formed for 5 seconds. The thickness of the obtained coating film was 0.018 μm as measured by X-ray fluorescence, and the appearance was a half mirror shape.
【００１９】次に、ＩＴＯ膜をインク法で成膜した。Ｉ
ＴＯインクは、平均粒径２５．３ｎｍの住友金属鉱山
（株）製のＩＴＯ粉（ＩＴＯ−ＵＦＰ）を１５ｇ、Ｎ−
メチル−２−ピロリドン（ＮＭＰ）を２０ｇ、ＮＮ‘ジ
メチルフォルムアミド（ＤＭＦ）を７ｇ及び４ヒドロキ
シーメチル−２ペンタノン（ジアセトンアルコール）７
０ｇを混合し、この溶液を直径５ｍｍのジルコニアボー
ルを用いて３６時間ボールミル混合して作製した。一
方、多摩化学工業製エチルシリケート４０を１．５ｇ、
ジアセトンアルコール１６ｇ、蒸留水１．５ｇの混合溶
液を撹拌しながら、５％塩酸水溶液３ｇ、ジアセトンア
ルコール２ｇ、蒸留水２．４ｇの混合溶液を滴下して、
エチルシリケート溶液を調製した。これらの２液を混合
し、１５０ｒｐｍに回転させたＣｕを蒸着したガラス基
板上に滴下して塗布した。ガラス基板は予め５０℃に予
熱しておいた。スピンコート後、１７０℃で１０分間乾
燥した。Next, an ITO film was formed by an ink method. I
As the TO ink, 15 g of ITO powder (ITO-UFP) manufactured by Sumitomo Metal Mining Co., Ltd. having an average particle diameter of 25.3 nm, and N-
20 g of methyl-2-pyrrolidone (NMP), 7 g of NN ′ dimethylformamide (DMF) and 7 g of 4-hydroxy-methyl-2-pentanone (diacetone alcohol)
0 g was mixed, and this solution was ball-mixed for 36 hours using zirconia balls having a diameter of 5 mm to prepare a solution. On the other hand, 1.5 g of ethyl silicate 40 manufactured by Tama Chemical Industry,
While stirring a mixed solution of 16 g of diacetone alcohol and 1.5 g of distilled water, a mixed solution of 3 g of a 5% hydrochloric acid aqueous solution, 2 g of diacetone alcohol and 2.4 g of distilled water was added dropwise.
An ethyl silicate solution was prepared. These two liquids were mixed and applied dropwise onto a glass substrate on which Cu rotated at 150 rpm was deposited. The glass substrate was preheated to 50 ° C. in advance. After spin coating, drying was performed at 170 ° C. for 10 minutes.
【００２０】得られたＩＴＯ膜の膜厚は表面粗さ計で段
差を測定し求めたところ、０．１３μｍであった。ま
た、透過電子顕微鏡（ＴＥＭ）で膜断面を観察し、ＩＴ
Ｏ微粒子の体積率が５８％、そのうち粒径が５０ｎｍ以
下のＩＴＯ微粒子の粒子体積分率が８７％であることを
確認した。The thickness of the obtained ITO film was 0.13 μm as measured by measuring the level difference with a surface roughness meter. Also, the cross section of the film was observed with a transmission electron microscope (TEM),
It was confirmed that the volume fraction of O fine particles was 58%, of which the particle volume fraction of ITO fine particles having a particle size of 50 nm or less was 87%.
【００２１】上記の方法で作製された被膜の可視光域
（波長４００〜９００ｎｍ）における全透過率を日立
（株）製分光光度計（Ｕ−４０００）で測定したとこ
ろ、４２％以上であった。また、電磁波シールド特性を
ダブルＴＥＭセル法で測定したところ、表１に示す結果
となった。The total transmittance in the visible light range (wavelength 400 to 900 nm) of the coating film produced by the above method was measured by a spectrophotometer (U-4000, manufactured by Hitachi, Ltd.) and found to be 42% or more. . When the electromagnetic wave shielding characteristics were measured by the double TEM cell method, the results shown in Table 1 were obtained.
【００２２】[0022]
【表１】 [Table 1]
【００２３】次に、耐食性を評価するために塩水噴霧試
験を１６時間実施した。試験後、剥離やクラックなどの
外観変化は見られず、また電磁波シールド特性もほとん
ど変化していなかった。Next, a salt spray test was conducted for 16 hours to evaluate corrosion resistance. After the test, no change in appearance such as peeling or cracking was observed, and the electromagnetic wave shielding characteristics were hardly changed.
【００２４】実施例２ ・・・ 第１層目にＮｉをイオ
ンプレーティング法で０．０３２μｍ成膜し、第２層目
を形成するＩＴＯインクに平均粒径１９．０μｍの粉を
用いた以外は実施例１同様に処理を行った。Example 2 Except that a Ni film was formed on the first layer by 0.032 μm by an ion plating method, and a powder having an average particle diameter of 19.0 μm was used for the ITO ink for forming the second layer. Was performed in the same manner as in Example 1.
【００２５】その結果、透過率が２８％以上で、電磁波
シールド特性は表２に示す結果となった。As a result, when the transmittance was 28% or more, the electromagnetic wave shielding characteristics were as shown in Table 2.
【００２６】[0026]
【表２】 [Table 2]
【００２７】塩水噴霧試験後、剥離やクラックなどの外
観変化は見られず、また電磁波シールド特性もほとんど
変化していなかった。After the salt spray test, no change in appearance such as peeling or cracking was observed, and the electromagnetic wave shielding characteristics were hardly changed.
【００２８】比較例１ ・・・ ガラス基板上にＩＴＯ
膜だけを実施例１同様に成膜した。その結果、透過率は
８９．６％と高い値を示したが、電磁波シールド特性は
表３に示す通りで、本発明で実施した例に比べ低い値で
あった。Comparative Example 1: ITO on glass substrate
Only the film was formed as in Example 1. As a result, the transmittance showed a high value of 89.6%, but the electromagnetic wave shielding properties were as shown in Table 3, which was lower than the example implemented in the present invention.
【００２９】[0029]
【表３】 [Table 3]
【００３０】比較例２ ・・・ ガラス基板上にＣｕ膜
だけを実施例１同様に成膜した。その結果、透過率およ
び電磁波シールド特性は実施例１同等であったが、塩水
噴霧試験後、被膜が全面剥離していた。Comparative Example 2 A Cu film alone was formed on a glass substrate in the same manner as in Example 1. As a result, the transmittance and the electromagnetic wave shielding characteristics were the same as those in Example 1, but the coating was completely peeled off after the salt spray test.
【００３１】比較例３ ・・・ Ｎｉを０．１μｍ成膜
した以外は実施例２同様に成膜した。その結果、透過率
が１０％以下で、ほとんど透明性を有していなかった。Comparative Example 3 A film was formed in the same manner as in Example 2 except that Ni was formed in a thickness of 0.1 μm. As a result, the transmittance was 10% or less, and there was almost no transparency.
【００３２】[0032]
【発明の効果】本発明の電磁波シールド膜は、シールド
特性に優れた金属膜または合金膜と透明導電膜であるＩ
ＴＯ膜を積層することにより、透明性に優れ、且つシー
ルド特性に優れた部材を得ることができる。また、第２
層目に形成したＩＴＯ膜によって耐食性および耐候性も
優れる。The electromagnetic wave shielding film of the present invention is a metal film or alloy film having excellent shielding properties and a transparent conductive film.
By laminating the TO film, a member having excellent transparency and excellent shielding properties can be obtained. Also, the second
Corrosion resistance and weather resistance are also excellent due to the ITO film formed in the layer.
Claims (4)
波シールド膜であって、第１層は金属膜または合金膜で
あり、第２層はＩＴＯ膜であることを特徴とする電磁波
シールド膜。An electromagnetic wave shielding film formed on a transparent member, wherein the first layer is a metal film or an alloy film, and the second layer is an ITO film. .
波シールド膜であって、第１層は乾式法により形成され
た金属膜または合金膜であり、第２層はインク法により
形成されたＩＴＯ膜であることを特徴とする電磁波シー
ルド膜。2. An electromagnetic wave shielding film formed on a transparent member, wherein the first layer is a metal film or an alloy film formed by a dry method, and the second layer is formed by an ink method. An electromagnetic wave shielding film, which is an ITO film.
０．０１〜０．０５μｍであり、かつ、該第１層の透過
率が２０％以上である、請求項１または請求項２に記載
の電磁波シールド膜。3. The metal film or the alloy film of the first layer has a thickness of 0.01 to 0.05 μm, and the transmittance of the first layer is 20% or more. 3. The electromagnetic wave shielding film according to 2.
０．６０μｍである請求項１〜請求項３いずれかに記載
の電磁波シールド膜。4. The film thickness of the second ITO film is 0.07 to 0.07.
The electromagnetic wave shielding film according to claim 1, wherein the thickness is 0.60 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19956097A JPH1146086A (en) | 1997-07-25 | 1997-07-25 | Electromagnetic wave shielding film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19956097A JPH1146086A (en) | 1997-07-25 | 1997-07-25 | Electromagnetic wave shielding film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1146086A true JPH1146086A (en) | 1999-02-16 |
Family
ID=16409865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19956097A Pending JPH1146086A (en) | 1997-07-25 | 1997-07-25 | Electromagnetic wave shielding film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1146086A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160289816A1 (en) * | 2013-03-21 | 2016-10-06 | Noritake Co., Limited | Electromagnetic shield |
-
1997
- 1997-07-25 JP JP19956097A patent/JPH1146086A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160289816A1 (en) * | 2013-03-21 | 2016-10-06 | Noritake Co., Limited | Electromagnetic shield |
| US10655209B2 (en) * | 2013-03-21 | 2020-05-19 | Noritake Co., Limited | Electromagnetic shield |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6282142B2 (en) | Infrared reflective substrate and manufacturing method thereof | |
| US6673142B2 (en) | Transparent conductive layered structure and method of producing the same, and transparent coat layer forming coating liquid used in the method of producing the same, and display device to which transparent conductive layered structure is applied | |
| TWI239938B (en) | Conductive transparent layers and method for their production | |
| WO1991002102A1 (en) | Film based on silicon dioxide and production thereof | |
| EP1020890A1 (en) | Transparent conductive layered structure and method of producing the same, and coating liquid for forming transparent conductive layer used in production of transparent conductive layered structure and method of producing the same | |
| US20100171406A1 (en) | Electroconductive laminate | |
| JP2008227352A (en) | Electromagnetic wave shielding sheet, method for manufacturing the same, and filter for plasma display panel | |
| JP4035934B2 (en) | Transparent conductive substrate, method for producing the same, coating solution for forming transparent conductive layer used for production of transparent conductive substrate, and method for producing the same | |
| JP4411672B2 (en) | Coating liquid for forming transparent conductive layer and method for producing the same | |
| EP1079413B1 (en) | Transparent conductive layered structure and method of producing the same, coating liquid useful therefor, and display that uses transparent conductive layered structure | |
| JP2003133787A (en) | Substrate with electromagnetic wave shielding film | |
| TWI295233B (en) | Laminate and uses thereof | |
| JP2008041765A (en) | Electromagnetic wave shielding/light transmitting window material, and its production process | |
| JPH1146086A (en) | Electromagnetic wave shielding film | |
| JP2002129259A (en) | Highly heat-resistant reflection film and laminated body, reflection plate for liquid crystal display element and glass as building material using the film | |
| JP2001047549A (en) | Transparent conductive film | |
| JPH02271697A (en) | Electrostatic and electromagnetic wave shielding material | |
| JP2001052529A (en) | Transparent conductive thin film laminate | |
| JPH0955175A (en) | Cathode-ray tube with transparent conductive film | |
| JPH1146087A (en) | Electromagnetic wave shielding film | |
| JP3975310B2 (en) | Transparent conductive substrate, method for producing the same, and display device to which the substrate is applied | |
| JP2004128220A (en) | Substrate with electromagnetic wave shield film | |
| JP2001279304A (en) | Chain-shaped metallic colloid dispersed liquid and its production method | |
| JP4325201B2 (en) | Transparent conductive layer forming coating liquid and transparent conductive film | |
| JP3750461B2 (en) | Transparent conductive layer forming coating liquid, transparent conductive layer and transparent conductive substrate |