JPH11349927A - Composition for polishing and polishing using the same - Google Patents
Composition for polishing and polishing using the sameInfo
- Publication number
- JPH11349927A JPH11349927A JP15591098A JP15591098A JPH11349927A JP H11349927 A JPH11349927 A JP H11349927A JP 15591098 A JP15591098 A JP 15591098A JP 15591098 A JP15591098 A JP 15591098A JP H11349927 A JPH11349927 A JP H11349927A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- composition
- pad
- manganese oxide
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は研磨剤として用いら
れる研磨用組成物に係り、特に、半導体装置の製造工程
において基板の外表面を平坦化するための化学機械研磨
に用いる研磨用組成物及びそれを用いた研磨方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing composition used as an abrasive, and more particularly to a polishing composition used for chemical mechanical polishing for flattening an outer surface of a substrate in a semiconductor device manufacturing process. The present invention relates to a polishing method using the same.
【０００２】[0002]
【従来の技術】近年、半導体装置の構造はますます複雑
化しており、これに伴い配線の多層化が進んでいる。配
線を多層化すると上層のパターンほど凹凸が大きくな
り、ステップカバレジの不足による断線等の不良が起こ
り易くなる。また、ＮＡの大きな光学系ではパターン全
体を結像することが困難になる。2. Description of the Related Art In recent years, the structure of a semiconductor device has become more and more complicated, and accordingly, multilayer wiring has been developed. When the wiring is multi-layered, the upper and lower patterns have larger irregularities, and defects such as disconnection due to insufficient step coverage are more likely to occur. In an optical system having a large NA, it is difficult to form an image of the entire pattern.
【０００３】そこで、多層配線の層間絶縁膜を平坦化す
る検討が行われ、なかでも化学機械研磨法（ＣＭＰ）は
広い面積を平坦化できることから注目され、盛んに研究
が行われている。[0003] Therefore, studies have been made on flattening an interlayer insulating film of a multilayer wiring. Among them, a chemical mechanical polishing (CMP) method has been attracting attention because it can flatten a large area, and has been actively studied.
【０００４】従来の化学機械研磨法による層間絶縁膜の
平坦化研磨は、シリカ、酸化セリウム等を水に分散させ
た研磨剤を用い、図７に示すような装置を用いて行われ
る。図７において、６０１は被研磨体としてのウエハ
で、研磨面を下にして自転、公転及び左右前後に揺動す
るウエハ支持体６０２に取り付けられている。６０３は
研磨剤を滴下するための研磨剤供給管である。６０４は
研磨パッドで、回転するパッド支持体６０５に取り付け
られている。[0004] The flattening and polishing of the interlayer insulating film by the conventional chemical mechanical polishing method is performed by using an abrasive in which silica, cerium oxide or the like is dispersed in water and using an apparatus as shown in FIG. In FIG. 7, reference numeral 601 denotes a wafer as an object to be polished, which is attached to a wafer support 602 that rotates, revolves, and swings right and left and back and forth with the polishing surface down. 603 is an abrasive supply pipe for dropping the abrasive. A polishing pad 604 is attached to a rotating pad support 605.
【０００５】研磨剤は供給管６０３を通って研磨パッド
６０４上に滴下され、ウエハ６０１とパッド６０４の相
対的な動きにより、滴下した研磨剤はウエハ６０１とパ
ッド６０４間に送り込まれ、ウエハ６０１の層間絶縁膜
がパッド６０４との摺擦により研磨される。The abrasive is dropped on the polishing pad 604 through the supply pipe 603, and the dropped abrasive is sent between the wafer 601 and the pad 604 by the relative movement of the wafer 601 and the pad 604, and the abrasive 601 is removed. The interlayer insulating film is polished by rubbing with the pad 604.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、この従
来の研磨方法は、ウエハ表面全体に均一に研磨剤を供給
することが困難で、研磨均一性に乏しいものであった。However, in this conventional polishing method, it is difficult to uniformly supply the polishing agent to the entire wafer surface, and the polishing uniformity is poor.
【０００７】そこで、この問題を解決する方法として、
研磨パッドに穴を開け、研磨用組成物をこの穴から加圧
供給する方法を検討した。しかし、ウエハ面への研磨用
組成物の供給均一性は向上したものの、得られる研磨均
一性は十分でなく、再現性も不十分であった。別の方法
として研磨パッドに格子状の溝を形成してみたが、これ
でも研磨均一性、再現性は不充分であった。Therefore, as a method for solving this problem,
A method of forming a hole in the polishing pad and supplying the polishing composition with pressure from the hole was studied. However, although the supply uniformity of the polishing composition to the wafer surface was improved, the obtained polishing uniformity was not sufficient, and the reproducibility was also insufficient. As another method, a grid-like groove was formed in the polishing pad, but the polishing uniformity and reproducibility were still insufficient.
【０００８】又、研磨剤として、酸化マンガンを水に分
散させた研磨用組成物を用いて研磨を行う場合、研磨特
性が時間とともに劣悪になることがあった。特に、これ
は研磨砥粒となる酸化マンガン粒子の分散性の悪化即ち
凝集により、粒径分布の経時的変化量が大きくなる為で
ある。When polishing is performed using a polishing composition in which manganese oxide is dispersed in water as a polishing agent, polishing characteristics may deteriorate with time. In particular, this is because the change over time in the particle size distribution becomes large due to the deterioration of the dispersibility, that is, the aggregation of the manganese oxide particles serving as the abrasive grains.
【０００９】酸化マンガン粒子は、酸化シリコンや酸化
セリウムに比べて、分散性が劣り、極端な場合には、１
〜２時間で完全に沈殿することもあった。[0009] Manganese oxide particles are inferior in dispersibility to silicon oxide and cerium oxide.
In some cases, complete precipitation occurred in ~ 2 hours.
【００１０】本発明は、研磨速度、研磨均一性及び研磨
安定性に優れた化学機械研磨を実現できる研磨用組成物
及びそれを用いた研磨方法を提供することを目的とす
る。An object of the present invention is to provide a polishing composition capable of realizing chemical mechanical polishing excellent in polishing rate, polishing uniformity and polishing stability, and a polishing method using the same.
【００１１】[0011]
【課題を解決するための手段】本発明の研磨用組成物
は、酸化マンガンの粒子とイソプロピルアルコールを含
むことを特徴とする。The polishing composition of the present invention comprises manganese oxide particles and isopropyl alcohol.
【００１２】[0012]
【発明の実施の形態】本発明の研磨用組成物は、研磨砥
粒となる酸化マンガン（ＭｎxＯx+1：ｘは自然数）と、
イソプロピルアルコールを含む組成物であり、これを研
磨剤として用いることにより、研磨速度、研磨均一性、
研磨安定性が向上する。BEST MODE FOR CARRYING OUT THE INVENTION The polishing composition of the present invention comprises manganese oxide (Mn x O x +1 : x is a natural number) serving as polishing abrasive grains.
A composition containing isopropyl alcohol, by using this as a polishing agent, polishing rate, polishing uniformity,
Polishing stability is improved.
【００１３】本発明に用いられる酸化マンガンとして
は、二酸化マンガン（ＭｎＯ2 ）及び／又は三酸化二マ
ンガン（Ｍｎ2 Ｏ3 ）が好適に用いられる。特に、前者
はタングステン（Ｗ）、アルミニウム（Ａｌ）、銅（Ｃ
ｕ）等の金属の研磨に好適であり、後者は酸化シリコン
等の絶縁体の研磨に好適である。As the manganese oxide used in the present invention, manganese dioxide (MnO 2 ) and / or dimanganese trioxide (Mn 2 O 3 ) are preferably used. In particular, the former is tungsten (W), aluminum (Al), copper (C
It is suitable for polishing metals such as u), and the latter is suitable for polishing insulators such as silicon oxide.
【００１４】本発明においては、酸化マンガンの一次粒
子径がメジアン径で１０ｎｍ乃至１．０μｍ、より好ま
しくは２００ｎｍ乃至３００ｎｍのものが好適に用いら
れるが、研磨の際には、それらが複数個凝集した状態で
用いることもある。In the present invention, manganese oxide having a median primary particle diameter of 10 nm to 1.0 μm, more preferably 200 nm to 300 nm, is suitably used. It may be used in a state where it has been done.
【００１５】そして、酸化マンガンをイソプロピルアル
コール（ＩＰＡ）からなる分散媒又はＩＰＡと水とを含
む分散媒中に分散させる。Then, the manganese oxide is dispersed in a dispersion medium composed of isopropyl alcohol (IPA) or a dispersion medium containing IPA and water.
【００１６】ＩＰＡと水とを含む分散媒におけるＩＰＡ
濃度は５重量％以上、より好ましくは５重量％〜９８重
量％にすることが好ましい。IPA in a dispersion medium containing IPA and water
The concentration is preferably 5% by weight or more, more preferably 5% to 98% by weight.
【００１７】本発明の組成物は、ｐＨが６．５乃至７．
５程度の中性付近で使用することができ、これは研磨剤
の取り扱いを容易にする。勿論、水酸化カリウム等のア
ルカリ性添加剤を加えてアルカリ性をｐＨ９．０〜１０
程度に強めてもよい。The composition of the present invention has a pH of 6.5 to 7.
It can be used at around 5 neutrals, which facilitates handling of the abrasive. Of course, an alkalinity additive such as potassium hydroxide is added to adjust the alkalinity to pH 9.0 to 10.
It may be strengthened to the extent.
【００１８】図１は本発明によるＩＰＡを添加した水に
酸化マンガンを分散させ充分にかく拌した後、１０分経
過した時の酸化マンガン粒子の粒子径分布を示すグラフ
である。粒子は０．１μｍ径から１．５μｍ径の間に分
布しており、メジアン径は０．３７４μｍである。この
組成物では酸化マンガン粒子は大部分が一次粒子残りが
二次粒子になっているものと考えられる。FIG. 1 is a graph showing the particle size distribution of manganese oxide particles 10 minutes after manganese oxide was dispersed in water to which IPA according to the present invention was added and sufficiently stirred. The particles are distributed between 0.1 μm and 1.5 μm in diameter, with a median diameter of 0.374 μm. In this composition, it is considered that the majority of the manganese oxide particles are primary particles and the remainder is secondary particles.
【００１９】図２はＩＰＡを添加する前のＩＰＡを含ま
ない水中に酸化マンガン粒子を分散させ充分にかく拌し
た後、１０分経過した時の酸化マンガン粒子の粒子径分
布を示す。粒子は１μｍから１３μｍの間に分布してお
り、メジアン径は４．１７μｍである。FIG. 2 shows the particle size distribution of the manganese oxide particles 10 minutes after the manganese oxide particles were dispersed and thoroughly stirred in IPA-free water before the addition of IPA. The particles are distributed between 1 μm and 13 μm, with a median diameter of 4.17 μm.
【００２０】このように、ＩＰＡを添加することによ
り、研磨砥粒となる酸化マンガン粒子の分散性が良くな
る。As described above, by adding IPA, the dispersibility of manganese oxide particles serving as polishing abrasive grains is improved.
【００２１】勿論より大きなメジアン径に凝集している
酸化マンガン分散液にＩＰＡを添加することにより、図
２のような分布の状態にすることも可能である。Of course, the distribution as shown in FIG. 2 can be obtained by adding IPA to the manganese oxide dispersion liquid having a larger median diameter.
【００２２】本発明の組成物中に分散している酸化マン
ガン粒子の粒径は、メジアン径で１０ｎｍ乃至３００μ
ｍ、より好ましくは１００ｎｍ乃至１００μｍ、最適に
は２００ｎｍ乃至５μｍである。粒径が１０ｎｍよりも
小さいと研磨速度が低下し、一方、１００μｍを超える
と研磨均一性が低下するとともに、表面がダメージを受
ける場合がある。とりわけ、一次粒子径がメジアン径で
２００ｎｍ〜３００ｎｍの酸化マンガンを用い、二次粒
子径が５μｍを越えないような状態がよい。The manganese oxide particles dispersed in the composition of the present invention have a median diameter of 10 nm to 300 μm.
m, more preferably 100 nm to 100 μm, and most preferably 200 nm to 5 μm. If the particle size is smaller than 10 nm, the polishing rate decreases, while if it exceeds 100 μm, the polishing uniformity decreases and the surface may be damaged. In particular, a state in which manganese oxide having a primary particle diameter of 200 to 300 nm in median diameter is used, and a secondary particle diameter does not exceed 5 μm is preferable.
【００２３】また、研磨砥粒の組成物中の含有量は５重
量％以上が好ましい。５重量％より少ないと研磨速度が
遅くなる。より好ましくは５重量％以上３０重量％以下
である。The content of the abrasive grains in the composition is preferably at least 5% by weight. If it is less than 5% by weight, the polishing rate will be low. More preferably, the content is 5% by weight or more and 30% by weight or less.
【００２４】本発明の研磨用組成物の製造方法として
は、ＭｎＯ2 を粉砕してＭｎＯ2 粒子を得る方法或いは
ＭｎＯ2 を焼成しＭｎ2 Ｏ3 にした後、粉砕してＭｎ2
Ｏ3 粒子を得る方法により酸化マンガン粒子を用意す
る。[0024] As a method for producing the polishing composition of the present invention, after the by pulverizing MnO 2 by firing method or MnO 2 to obtain the MnO 2 particles Mn 2 O 3, by grinding Mn 2
Manganese oxide particles are prepared by a method for obtaining O 3 particles.
【００２５】これをＩＰＡ又はＩＰＡ水溶液に分散させ
る。或いは酸化マンガン粒子を純水中に分散させた後Ｉ
ＰＡを添加してもよい。水に酸化マンガンを分散させた
ものは、ナノビクス研磨材（ＮＡＮＯＢＩＸ）として、
三井金属鉱業（株）より入手できるので、これにＩＰＡ
を添加してもよい。This is dispersed in IPA or an IPA aqueous solution. Alternatively, after dispersing the manganese oxide particles in pure water,
PA may be added. Manganese oxide dispersed in water is used as a nanobics abrasive (NANOBIX)
Available from Mitsui Mining & Smelting Co., Ltd.
May be added.
【００２６】以上のとおり、ＩＰＡ又はそれを含む分散
媒中に、酸化マンガン粒子を分散させた研磨用組成物
は、酸化マンガン粒子が凝集し難くなる。よって、長時
間研磨をくり返し行っても研磨レートの変化量を小さく
抑えられる。As described above, in the polishing composition in which manganese oxide particles are dispersed in IPA or a dispersion medium containing the same, manganese oxide particles are less likely to aggregate. Therefore, even if polishing is repeated for a long time, the amount of change in the polishing rate can be kept small.
【００２７】本発明によれば、研磨用組成物にイソプロ
ピルアルコールを配合することにより、研磨砥粒を研磨
パット面に拡げ、研磨均一性を向上させる効果もある。According to the present invention, the addition of isopropyl alcohol to the polishing composition also has the effect of spreading polishing abrasive grains on the polishing pad surface and improving polishing uniformity.
【００２８】この理由は、現在のところ明かではない
が、次のように考えられる。即ち、ＩＰＡを配合しない
研磨用組成物を用いると、研磨パッドの研磨剤組成物供
給口又は溝付近での研磨が進み、研磨の均一性が低下す
る。これは、研磨パッドと研磨砥粒との摩擦により粒子
は帯電し、帯電した研磨砥粒が研磨パッドの研磨剤組成
物供給口又は溝付近に吸着してしまうためと考えられ
る。これに対して、ＩＰＡを加えると、研磨砥粒の帯電
が抑えられ、あるいは研磨パッドと研磨砥粒の帯電が同
一符号となるため、上記供給口への砥粒の吸着が抑えら
れるため研磨均一性が向上する。The reason for this is not clear at present, but is considered as follows. That is, when a polishing composition containing no IPA is used, polishing near the polishing composition supply port or groove of the polishing pad proceeds, and the polishing uniformity decreases. This is considered to be because the particles are charged by friction between the polishing pad and the polishing abrasive grains, and the charged polishing abrasive grains are adsorbed to the vicinity of the abrasive composition supply port or groove of the polishing pad. On the other hand, when IPA is added, the charging of the polishing abrasive grains is suppressed, or the charging of the polishing pad and the polishing abrasive grains has the same sign. The performance is improved.
【００２９】さらに、ＩＰＡを加えることにより、研磨
砥粒がウエハに付着しにくく、研磨後の洗浄が容易にな
る。また、ＩＰＡの液膜がウエハ上に形成され、いわゆ
るマランゴニ効果によりウエハを洗浄な状態で乾燥する
ことが容易になる。Further, the addition of IPA makes it difficult for abrasive grains to adhere to the wafer, and facilitates cleaning after polishing. Further, a liquid film of IPA is formed on the wafer, and the so-called Marangoni effect makes it easy to dry the wafer in a clean state.
【００３０】また、本発明の研磨用組成物は脱気するの
が好ましい。研磨処理条件によっては、研磨処理中に空
気を巻き込んだり、ガスを発生する場合があり、これに
研磨均一性を低下させる原因となる。従って、組成物中
の空気等の溶存ガスを予め脱気しておくことにより、た
とえガスが発生等してもガスを溶かすことができるた
め、研磨均一性の低下を抑えることができる。脱気の方
法としては、容器内部を気体のみ透過させる膜で仕切
り、一方の部屋に研磨用組成物を流し、他方の部屋を真
空引きする方法が好適に用いられる。脱気後の溶存ガス
量としてはｐｐｂレベルのものが好ましい。The polishing composition of the present invention is preferably degassed. Depending on the polishing process conditions, air may be entrained or a gas may be generated during the polishing process, which may lower the polishing uniformity. Therefore, by previously degassing a dissolved gas such as air in the composition, even if a gas is generated, the gas can be dissolved, so that a decrease in polishing uniformity can be suppressed. As a method of degassing, a method of partitioning the inside of the container with a membrane that allows only gas to permeate, flowing a polishing composition into one room, and evacuating the other room is preferably used. The dissolved gas amount after degassing is preferably at the ppb level.
【００３１】本発明の研磨用組成物は、層間絶縁膜以外
に、例えばトレンチに埋め込んだポリシリコン、その他
の金属配線等に好適に適用される。さらに、半導体表面
の研磨だけでなく、種々の材料の精密研磨に用いること
ができるのはもとよりである。The polishing composition of the present invention is suitably applied to, for example, polysilicon or other metal wiring buried in a trench other than the interlayer insulating film. Further, it can be used not only for polishing the semiconductor surface but also for precision polishing of various materials.
【００３２】なお、本発明において、用途によっては、
界面活性剤を１００ｐｐｍ程度加えてもよい。In the present invention, depending on the use,
A surfactant may be added in an amount of about 100 ppm.
【００３３】次に、本発明の研磨用組成物を用いた被研
磨体の研磨方法を以下に示す。Next, a method for polishing an object to be polished using the polishing composition of the present invention will be described below.
【００３４】図３は、本発明の研磨用組成物が好適に適
用される研磨装置の一例である。FIG. 3 shows an example of a polishing apparatus to which the polishing composition of the present invention is suitably applied.
【００３５】図において、Ｗは、被研磨体であり、それ
は例えば、層間絶縁膜が形成されたＳｉウエハである。
ウエハＷは、回転可能な支持体２上に固定されている。
３は中空の回転軸であり、先端の回転する研磨ヘッド１
の下面に研磨パッド４が取り付けられている。パッド４
には、格子状の溝又は図２に示すような組成物供給用の
複数の穴５が設けられている。研磨用組成物は回転軸３
の内部を通り、パッド４に形成された穴５を介してウエ
ハＷの被研磨面とパッド５の表面との間に供給される。In the figure, W is a body to be polished, which is, for example, a Si wafer on which an interlayer insulating film is formed.
The wafer W is fixed on a rotatable support 2.
Reference numeral 3 denotes a hollow rotating shaft, and the polishing head 1 having a rotating tip.
A polishing pad 4 is attached to the lower surface of the polishing pad. Pad 4
Are provided with a plurality of holes 5 for supplying a composition as shown in FIG. Polishing composition is rotating shaft 3
Is supplied between the surface to be polished of the wafer W and the surface of the pad 5 through the hole 5 formed in the pad 4.
【００３６】図３が示すように、ウエハＷよりも大きく
ウエハの直径の２倍より小さい径の研磨パッド４を用い
ており、しかも、研磨用組成物をパッド内部より加圧供
給することにより、パッド４とウエハＷとの間に均一に
組成物を供給できるよう構成されている。又、ウエハの
一部分のみを研磨する為にヘッド１とパッド４をウエハ
よりも小径にすることもできる。As shown in FIG. 3, the polishing pad 4 having a diameter larger than the wafer W and smaller than twice the diameter of the wafer is used, and the polishing composition is supplied under pressure from the inside of the pad. It is configured such that the composition can be uniformly supplied between the pad 4 and the wafer W. The head 1 and the pad 4 can be made smaller in diameter than the wafer in order to polish only a part of the wafer.
【００３７】また、支持体２とウエハＷとの間に裏面パ
ッド等のクッション材（不図示）を貼りつけ、この裏面
パッドによりウエハＷに均一な加圧力を与えてもよい。Further, a cushion material (not shown) such as a back pad may be attached between the support 2 and the wafer W, and a uniform pressing force may be applied to the wafer W by the back pad.
【００３８】ウエハＷの外表面の研磨は、研磨用組成物
を一定圧力でパッド４とウエハＷの間に供給しながら、
パッド４を自公転させ、かつ水平方向に揺動させること
により行う。なお、パッド４に形成される穴の直径は、
０．５〜２．５ｍｍが好適であり、小さい穴を多数設け
るほうが均一性は向上する。The outer surface of the wafer W is polished by supplying the polishing composition between the pad 4 and the wafer W at a constant pressure.
This is performed by causing the pad 4 to revolve and swing in the horizontal direction. The diameter of the hole formed in the pad 4 is
The thickness is preferably 0.5 to 2.5 mm, and the uniformity is improved by providing a large number of small holes.
【００３９】研磨用組成物の供給量は、８インチウエハ
の場合、５０〜１０００ｍｌ／分である。供給圧力は１
０〜２００ｇ／ｃｍ2 程度である。The supply amount of the polishing composition is 50 to 1000 ml / min for an 8-inch wafer. Supply pressure is 1
It is about 0 to 200 g / cm 2 .
【００４０】また、ウエハＷの周縁を囲むように、ウエ
ハＷの被研磨面とほぼ面一となるダミー板を設けてもよ
い。これにより、研磨パッド４の一部がウエハＷの外に
でた場合でも、パッド４は傾くことはなく、ウエハＷの
外周を過度に研磨することがなくなる。Further, a dummy plate which is substantially flush with the surface to be polished of the wafer W may be provided so as to surround the periphery of the wafer W. Accordingly, even when a part of the polishing pad 4 is out of the wafer W, the pad 4 does not tilt and the outer periphery of the wafer W is not excessively polished.
【００４１】研磨パッド４の材質としては、本発明の研
磨用組成物を用いれば帯電を抑えることができるため、
特にこだわらない。よって、周知のポリウレタン、不織
布等が用いられる。As the material of the polishing pad 4, if the polishing composition of the present invention is used, charging can be suppressed.
I am not particular about it. Therefore, well-known polyurethane, nonwoven fabric, and the like are used.
【００４２】以上の研磨方法を用いることにより、本発
明の研磨用組成物が有する高い研磨均一性及び研磨速度
と相まって、半導体表面の平坦化等極めて高い精度が要
求される研磨が可能となる。By using the above-mentioned polishing method, it becomes possible to perform polishing requiring extremely high precision such as flattening of the semiconductor surface, in addition to the high polishing uniformity and the polishing rate of the polishing composition of the present invention.
【００４３】[0043]
【実施例】以下、実施例を挙げて本発明を詳細に説明す
る。研磨装置としては、図３に示した装置のヘッド１を
ウエハＷより小径（研磨面積が約４ｃｍ2）のものに付
け換えた装置を用いた。The present invention will be described below in detail with reference to examples. The polishing apparatus, using the apparatus smaller diameter than the wafer W to the head 1 of the apparatus shown (polishing area of about 4 cm 2) was changed with the ones in Figure 3.
【００４４】被研磨物として、熱酸化膜を７８０ｎｍ形
成した６インチシリコンウエハを用い、パッドの押し圧
力を５００ｇ／ｃｍ2 、自転数を５００ｒｐｍ、公転数
４９９ｒｐｍ、研磨用組成物の供給量を５０ｃｃ／分と
した。[0044] As an object to be polished, using a 6-inch silicon wafer was 780nm form a thermal oxide film, the pressing force 500 g / cm 2 of the pad, 500 rpm and rotation number, revolution number 499Rpm, the supply amount of the polishing composition 50cc / Min.
【００４５】パッド４は、ポリウレタンを主成分とする
直径６０ｍｍの市販のパッド（ロデール社製ＩＣ−１０
００）で、これに、２ｍｍφの穴を複数あけたものを用
いた。The pad 4 is a commercially available pad mainly composed of polyurethane and having a diameter of 60 mm (Rodell IC-10).
00), a plurality of holes each having a diameter of 2 mm were used.
【００４６】また、研磨用組成物としては、一次粒子径
が２００ｎｍ〜３００ｎｍメジアン径のＭｎ2 Ｏ3 を１
２重量％の含有量にて、水及びＩＰＡからなる液に分散
したものを用いた。As the polishing composition, Mn 2 O 3 having a primary particle diameter of 200 nm to 300 nm and a median diameter of 1 is used.
What was dispersed in a liquid composed of water and IPA at a content of 2% by weight was used.
【００４７】ＩＰＡを５０ｗｔ％を配合した本実施例の
組成物を用いて研磨した結果を各々図５に示す。８００
分研磨を続けても研磨レートは２００ｎｍ／分以上に保
つことができた。条件を更に最適化すれば、バラツキは
更に抑えられるであろう。これに対して無ＩＰＡ組成物
即ちＩＰＡフリーの研磨用組成物の場合は、バラツキも
大きく、研磨レートもすぐに低下してしまう。バラツキ
は図５の２倍以上となり傾きもより左下がりになる。FIG. 5 shows the results of polishing using the composition of this example in which IPA was blended at 50 wt%. 800
The polishing rate could be maintained at 200 nm / min or more even if the minute polishing was continued. If the conditions are further optimized, the variation will be further suppressed. On the other hand, in the case of a non-IPA composition, that is, an IPA-free polishing composition, the dispersion is large and the polishing rate is immediately lowered. The variation is more than twice as large as that in FIG.
【００４８】又、研磨量は穴の位置に対応して多く、Ｉ
ＰＡフリーの場合においては、それが顕著となることが
分かった。即ち、ＩＰＡを加えることにより、研磨の均
一性が向上することが分かった。The polishing amount is large in accordance with the position of the hole.
In the case of PA-free, it was found that it became remarkable. That is, it was found that the addition of IPA improved the polishing uniformity.
【００４９】この理由を調べるため、研磨を行った直後
のパッドと研磨用組成物の帯電電荷を表面電位計を用い
て測定した。To investigate the reason, the charged charges of the pad and the polishing composition immediately after polishing were measured using a surface voltmeter.
【００５０】ＩＰＡフリーの組成物では、パッドと組成
物は異符号に帯電しているのに対し、ＩＰＡを含む本実
施例の研磨用組成物の場合は、帯電符号は同じであり、
かつ電荷量も少ないものとなっている。このことから、
ＩＰＡフリーの組成物では、研磨剤がパッドに不均一に
吸着されて均一性にばらつきが生じるが、ＩＰＡを加え
ることにより吸着が抑制され、その結果、パッドとウエ
ハの接触面全体に研磨砥粒が供給されて研磨均一性、研
磨速度が向上するものと考えられる。In the case of the IPA-free composition, the pad and the composition are charged with different signs, whereas in the case of the polishing composition of this embodiment containing IPA, the charge sign is the same.
In addition, the charge amount is small. From this,
In the IPA-free composition, the polishing agent is non-uniformly adsorbed on the pad, causing a variation in uniformity. However, the addition of the IPA suppresses the adsorption, and as a result, the abrasive grains are applied to the entire contact surface between the pad and the wafer. Is supplied to improve polishing uniformity and polishing rate.
【００５１】次に、種々の割合でＩＰＡを配合した組成
物を用いて１分間研磨したときの、パッド面積の平均研
磨レートを図６に示す。Next, FIG. 6 shows the average polishing rate of the pad area when polishing was performed for 1 minute using compositions containing IPA at various ratios.
【００５２】図から明らかなように、ＩＰＡを加えるこ
とにより研磨速度は向上し、特に、５重量％以上の範囲
では、極めて高い研磨速度が得られることが分かった。As is clear from the figure, the polishing rate was improved by adding IPA, and it was found that an extremely high polishing rate could be obtained especially in the range of 5% by weight or more.
【００５３】以上から、本発明の研磨用組成物を用いる
ことにより、高い研磨均一性及び速度が得られることが
分かる。From the above, it can be seen that high polishing uniformity and high polishing speed can be obtained by using the polishing composition of the present invention.
【００５４】[0054]
【発明の効果】本発明により、即ち、研磨用組成物を酸
化マンガン粒子、イソプロピルアルコールで構成するこ
とにより、極めて高い研磨均一性、研磨速度及び研磨安
定性を達成可能な化学機械研磨法を提供することができ
る。According to the present invention, that is, a chemical mechanical polishing method capable of achieving extremely high polishing uniformity, polishing speed and polishing stability by providing a polishing composition comprising manganese oxide particles and isopropyl alcohol. can do.
【図１】本発明の研磨用組成物における酸化マンガン粒
子の粒子径分布の一例を示す図である。FIG. 1 is a diagram showing an example of a particle size distribution of manganese oxide particles in a polishing composition of the present invention.
【図２】研磨用組成物における酸化マンガン粒子の粒子
径分布の一例を示す図である。FIG. 2 is a view showing an example of a particle size distribution of manganese oxide particles in a polishing composition.
【図３】本発明に用いられる研磨装置の模式図である。FIG. 3 is a schematic view of a polishing apparatus used in the present invention.
【図４】本発明に用いられる研磨パッドの表面を示す図
である。FIG. 4 is a diagram showing a surface of a polishing pad used in the present invention.
【図５】本発明の研磨方法による研磨レートの経時変化
を示す図である。FIG. 5 is a diagram showing a change over time in a polishing rate by the polishing method of the present invention.
【図６】本発明の研磨方法による研磨レートのＩＰＡ濃
度依存性を示す図である。FIG. 6 is a graph showing the dependence of the polishing rate on the IPA concentration by the polishing method of the present invention.
【図７】化学機械研磨装置を示す概念図である。FIG. 7 is a conceptual diagram showing a chemical mechanical polishing apparatus.
１ 研磨ヘッド ２ 支持体 ３ 中空の回転体 ４ 研磨パッド ５ 孔 DESCRIPTION OF SYMBOLS 1 Polishing head 2 Support 3 Hollow rotating body 4 Polishing pad 5 Hole
Claims (8)
コールを含むことを特徴とする研磨用組成物。1. A polishing composition comprising manganese oxide particles and isopropyl alcohol.
０ｎｍ乃至３００μｍである請求項１記載の研磨用組成
物。2. The manganese oxide particles have a median diameter of 1
2. The polishing composition according to claim 1, which has a thickness of 0 nm to 300 μm.
ン径は２００ｎｍ乃至３００ｎｍであり、二次粒子のメ
ジアン径が５μｍ以下である請求項１記載の研磨用組成
物。3. The polishing composition according to claim 1, wherein the primary particles of the manganese oxide particles have a median diameter of 200 nm to 300 nm, and the secondary particles have a median diameter of 5 μm or less.
である請求項１記載の研磨用組成物。4. The polishing composition according to claim 1, wherein the manganese oxide has a particle concentration of 5% by weight or more.
の含有量が５重量％以上である請求項１記載の研磨用組
成物。5. The polishing composition according to claim 1, further comprising water, wherein the content of isopropyl alcohol is 5% by weight or more.
ッドとを用いて被研磨体を研磨する研磨方法。6. A polishing method for polishing an object to be polished using the polishing composition according to claim 1 and a polishing pad.
給する為の開孔及び／又は溝を有する請求項６に記載の
研磨方法。7. The polishing method according to claim 6, wherein the polishing pad has openings and / or grooves for supplying the polishing composition.
研磨体の被研磨面の面積の４倍より小さい請求項６記載
の研磨方法。8. The polishing method according to claim 6, wherein the size of the polishing surface of the polishing pad is smaller than four times the area of the surface to be polished of the object to be polished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15591098A JPH11349927A (en) | 1998-06-04 | 1998-06-04 | Composition for polishing and polishing using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15591098A JPH11349927A (en) | 1998-06-04 | 1998-06-04 | Composition for polishing and polishing using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11349927A true JPH11349927A (en) | 1999-12-21 |
Family
ID=15616192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15591098A Withdrawn JPH11349927A (en) | 1998-06-04 | 1998-06-04 | Composition for polishing and polishing using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11349927A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8702826B2 (en) | 2012-06-14 | 2014-04-22 | Fujitsu Limited | Abrasive agent, method for producing abrasive agents, and electronic device |
-
1998
- 1998-06-04 JP JP15591098A patent/JPH11349927A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8702826B2 (en) | 2012-06-14 | 2014-04-22 | Fujitsu Limited | Abrasive agent, method for producing abrasive agents, and electronic device |
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