JP2000033552A - Abrasive cloth and semiconductor device manufacturing method using the abrasive cloth - Google Patents
Abrasive cloth and semiconductor device manufacturing method using the abrasive clothInfo
- Publication number
- JP2000033552A JP2000033552A JP11811399A JP11811399A JP2000033552A JP 2000033552 A JP2000033552 A JP 2000033552A JP 11811399 A JP11811399 A JP 11811399A JP 11811399 A JP11811399 A JP 11811399A JP 2000033552 A JP2000033552 A JP 2000033552A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing cloth
- base material
- polished
- fine particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、化学的機械研磨
（ＣＭＰ）に用いられる研磨布及びこの研磨布を用いた
半導体装置の製造方法に関する。The present invention relates to a polishing cloth used for chemical mechanical polishing (CMP) and a method for manufacturing a semiconductor device using the polishing cloth.
【０００２】[0002]
【従来の技術】現在、絶縁材又は配線材等の研磨を行
い、その表面を平坦化する化学的機械研磨（ＣＭＰ）法
が注目されている。研磨に用いられる研磨布には、大き
く分けて２種類ある。一つはポリテックス（Ｐｏｌｉｔ
ｅｘ）（Ｒｏｄｅｌ社製）に代表されるもので、パッド
コンディショニング処理（ドレッシング）が必要のない
ものである。2. Description of the Related Art At present, a chemical mechanical polishing (CMP) method for polishing an insulating material or a wiring material and flattening the surface thereof has attracted attention. There are roughly two types of polishing cloths used for polishing. One is Polytex
ex) (manufactured by Rodel) and does not require pad conditioning processing (dressing).
【０００３】ポリテックスは、たこつぼが並んだような
断面構造のため、研磨の際使用されるスラリー（水、Ｓ
ｉＯ２、Ａｌ２０３、薬品（酸化剤）等）の保持性が非
常に優れている。又、その表面は非常にしなやかであ
り、研磨後に被研磨材の表面に鋭い傷（スクラッチ）を
つけることもない。[0003] Polytex has a cross-sectional structure in which takotsutsu are lined up.
It has excellent retention of iO2, Al203, chemicals (oxidizing agent, etc.). In addition, the surface is very supple, and the surface of the material to be polished does not have sharp scratches after polishing.
【０００４】しかしながら、この研磨布の圧縮弾性率
は、１０ＭＰａにも満たないので非常に軟らかい。その
為、ポリテックスを被研磨材の平坦化工程に使用した場
合、研磨速度は非常に遅く、又平坦化性が劣るという問
題があった。However, the compression elastic modulus of this polishing cloth is very soft because it is less than 10 MPa. Therefore, when polytex is used in the step of flattening the material to be polished, there has been a problem that the polishing rate is very slow and the flatness is poor.
【０００５】また、もう一つは、ＩＣ−１０００（Ｒｏ
ｄｅｌ社製）に代表される布である。ＩＣ−１０００の
内部には気泡が形成され、その圧縮弾性率は約２００Ｍ
Ｐａとポリテックスに比べてかなり硬いものである。Another is IC-1000 (Ro).
del.). Bubbles are formed inside the IC-1000, and its compression modulus is about 200M.
It is considerably harder than Pa and Polytex.
【０００６】通常、ＩＣ−１０００の研磨布は、ダイヤ
モンドコンディショニングプレートを用い、パッドコン
ディショニング処理を半導体装置にあっては被研磨剤と
してのウェハを１枚毎に研磨し、ＩＣ−１０００の研磨
布の表面層を掻きむしって軟らかい層を形成する。Normally, the polishing cloth of the IC-1000 uses a diamond conditioning plate, and in the case of a semiconductor device, a pad as a polishing agent is polished one by one using a diamond conditioning plate. Scratch the surface layer to form a soft layer.
【０００７】これは、コンディショニング処理を行わな
いと、表面層が硬くスラリーの保持する割合が少なくな
るので研磨速度が極端に遅くなるのでこれを防ぐためで
ある。This is because if the conditioning treatment is not performed, the polishing rate becomes extremely slow because the surface layer is hard and the ratio of holding the slurry is low, so that this is prevented.
【０００８】一方、ＩＣ−１０００の研磨布の寿命は、
コンディショニング処理の回数によって決まってしま
う。コンディショニング処理によって表面層が掻きむし
られるからである。On the other hand, the life of the polishing cloth of IC-1000 is as follows.
It is determined by the number of conditioning processes. This is because the surface layer is scraped off by the conditioning treatment.
【０００９】ちなみに、被研磨材としてのウェハ１００
０枚をコンディショニング処理した後には、処理前の状
態に比べて、研磨布の表面層が約８５０μｍ失われる。
寿命を長くするため、研磨布の表面層の掻きむしられる
量を少なくするようにコンディショニング条件を和らげ
た場合、研磨速度が遅くなったり安定しなかったりす
る。Incidentally, the wafer 100 as a material to be polished is
After the conditioning processing of 0 sheets, the surface layer of the polishing pad is lost by about 850 μm as compared with the state before the processing.
If the conditioning conditions are relaxed so as to reduce the amount of the surface layer of the polishing cloth scraped to prolong the life, the polishing rate becomes slow or unstable.
【００１０】また、コンディショニング直後の研磨布の
表面には、数１０μｍ程度の厚さの軟らかい層（圧縮弾
性率１０ＭＰａ以下）が形成されており、この軟らかい
層が平坦性を阻害する。On the surface of the polishing pad immediately after conditioning, a soft layer (compression elastic modulus of 10 MPa or less) having a thickness of about several tens of micrometers is formed, and this soft layer impairs flatness.
【００１１】更に、この軟らかい層は、研磨の進行と共
に、圧縮され硬くなってゆく。そのため、研磨開始直後
には被研磨材の表面層には、スクラッチの発生が少ない
が、長時間研磨を続けて研磨布が圧縮されて硬くなると
被研磨材の表層面に発生するスクラッチが大きくなる。Further, this soft layer is compressed and hardened as the polishing proceeds. Therefore, immediately after the start of polishing, the surface layer of the material to be polished is less likely to generate scratches. .
【００１２】上述したように、ポリテックスに代表され
る研磨布は、その表面層である軟らかい層が形成される
ため、被研磨材の表面層に生ずるスクラッチは少ないが
研磨速度及び平坦性が劣るという問題があった。As described above, a polishing cloth typified by polytex has a soft layer which is a surface layer formed thereon, and therefore, the scratch generated on the surface layer of the material to be polished is small, but the polishing rate and flatness are poor. There was a problem.
【００１３】また、ＩＣ−１０００に代表される研磨布
は、コンディショニング処理を行わないと研磨時間が長
くなるにつれて、被研磨材の表面層にスクラッチが多く
発生するという問題があった。Further, a polishing cloth typified by IC-1000 has a problem that if a conditioning process is not performed, as the polishing time becomes longer, more scratches are generated on the surface layer of the material to be polished.
【００１４】逆にコンディショニングを行うと、研磨布
の表面は、掻きむしられて厚さが薄くなるので、寿命が
短かくなるいという問題もあった。Conversely, if the conditioning is performed, the surface of the polishing pad is scraped and the thickness thereof becomes thin, so that there is also a problem that the life is shortened.
【００１５】更に、上述した従来の研磨布を用いて半導
体装置の、例えば埋め込み配線（ダマシン配線）形成の
ための研磨をする際に、オーバーポリシング（Over Pol
ishing）によってディッシング（Dishing）やシンニン
グ（Thinning）が生ずる。Further, when polishing the semiconductor device using the above-described conventional polishing cloth, for example, for forming an embedded wiring (damascene wiring), over polishing (Over Polling) is performed.
Ising causes dishing and thinning.
【００１６】これは、リソグラフィ行程において上層に
形成された配線をショートさせたり、配線の長さがうね
りの上で長くなり高抵抗となってしまうなどの欠点をも
たらす。This causes a drawback that the wiring formed in the upper layer is short-circuited in the lithography process, or the wiring becomes long due to the undulation, resulting in high resistance.
【００１７】[0017]
【発明が解決しようとする課題】本発明の目的は、上述
した従来の研磨布が指摘されていた欠点を解消し、被研
磨材に対する平坦化性能が高く、安定した研磨速度が得
られ、被研磨材表面におけるスクラッチの発生の抑制を
図り得る研磨布及びこの研磨布を用いた半導体装置の製
造方法を提供するにある。SUMMARY OF THE INVENTION It is an object of the present invention to overcome the above-mentioned drawbacks of the conventional polishing cloth, to provide a high leveling performance for a material to be polished and to obtain a stable polishing rate. An object of the present invention is to provide a polishing cloth capable of suppressing generation of scratches on a polishing material surface and a method for manufacturing a semiconductor device using the polishing cloth.
【００１８】[0018]
【課題を解決するための手段】本発明は、上記目的を達
成するため、以下のように構成されている。SUMMARY OF THE INVENTION The present invention is configured as follows to achieve the above object.
【００１９】本発明の研磨布（請求項１）は、表面でス
ラリーを保持し、且つ被研磨材の表面を機械的に研磨す
る母材と、この母材中に分散され、溶媒に対して可溶で
ある微粒子と、より構成されていることを特徴とする。The polishing cloth of the present invention (Claim 1) comprises a base material for holding a slurry on the surface and mechanically polishing the surface of the material to be polished, a base material dispersed in the base material, and And soluble fine particles.
【００２０】このとき、前記母材（請求項２）は、その
表面に前記微粒子が前記溶媒に溶けて形成された凹部を
有することを特徴としている。At this time, the base material (Claim 2) is characterized in that the surface thereof has a concave portion formed by dissolving the fine particles in the solvent.
【００２１】前記微粒子（請求項３）は、その表面に、
前記溶媒に対して不溶であるコーティング層を形成す
る。前記母材内部で複数の微粒子が接触し、接触する全
ての微粒子が溶け、表面から内部に向け大きな凹部を形
成し、内部まで軟らかくしてしまうのを防ぐことができ
る。The fine particles (Claim 3) have, on the surface thereof,
A coating layer that is insoluble in the solvent is formed. It is possible to prevent a plurality of fine particles from contacting inside the base material, dissolve all the fine particles in contact, form a large concave portion from the surface toward the inside, and prevent the inside from becoming soft.
【００２２】このとき、前記母材（請求項４）は、内部
に空孔が存在しない。被研磨材の表面が研磨されたとき
の平坦性を確保するための硬さを保持するためである。At this time, the base material (Claim 4) has no pores inside. This is to maintain the hardness for ensuring the flatness when the surface of the material to be polished is polished.
【００２３】前記母材の表面に保持されるスラリー（請
求項５）は、水、ＳｉＯ２、Ａｌ２Ｏ３、薬品（酸化
剤）のいずれか一つであることが好ましい。The slurry held on the surface of the base material (claim 5) is preferably one of water, SiO 2 , Al 2 O 3 , and a chemical (oxidizing agent).
【００２４】又、前記微粒子（請求項６）は、研磨速度
を速めるのに好ましくはその粒径が５乃至３０μｍであ
る。The fine particles (claim 6) preferably have a particle size of 5 to 30 μm in order to increase the polishing rate.
【００２５】本発明の研磨布（請求項７）は、溶媒に対
して可溶である微粒子と、 内部に前記微粒子が分散さ
れ、表面にスラリーを保持し、且つ被研磨材の表面が機
械的に研磨されている際、前記微粒子が前記溶媒に溶け
て前記表面に凹部を形成する母材と、より成る。この場
合、研磨中に前記母材の表面層が少しづつ減ってゆきな
がら前記微粒子が露出し、前記スラリーによって、前記
微粒子が溶けてしまい、新たな凹部が表面層に形成され
る。The polishing cloth according to the present invention is characterized in that fine particles soluble in a solvent and the fine particles are dispersed therein, the slurry is held on the surface, and the surface of the material to be polished is mechanical. A base material that forms the concave portion on the surface by dissolving the fine particles in the solvent when being polished. In this case, the fine particles are exposed while the surface layer of the base material is gradually reduced during polishing, and the fine particles are melted by the slurry, so that new concave portions are formed in the surface layer.
【００２６】このときの前記微粒子（請求項８）は、そ
の表面に、前記溶媒に対して不溶であるコーティング層
を形成する。前記母材内部で複数の微粒子が接触し、接
触する全ての微粒子が溶け、表面から内部に向け大きな
凹部を形成し、内部まで軟らかくしてしまうのを防ぐた
めである。At this time, the fine particles (claim 8) form on the surface thereof a coating layer insoluble in the solvent. This is for preventing a plurality of fine particles from contacting inside the base material, dissolving all the fine particles in contact, forming a large concave portion from the surface toward the inside, and softening the inside.
【００２７】このとき、前記母材（請求項９）は、内部
に空孔が存在しない。被研磨材の表面が研磨されたとき
の平坦性を確保するための硬さを保持するためである。At this time, the base material (Claim 9) has no pores inside. This is to maintain the hardness for ensuring the flatness when the surface of the material to be polished is polished.
【００２８】前記母材の表面に保持されるスラリー（請
求項１０）は、水、ＳｉＯ２、Ａｌ ２Ｏ３、薬品（酸化
剤）のいずれか一つであることが好ましい。The slurry (contract) held on the surface of the base material
Claim 10) relates to water, SiO2, Al 2O3, Chemicals (oxidation
Agent) is preferred.
【００２９】又、前記微粒子（請求項１１）は、研磨速
度を速めるのに好ましくはその粒径が５乃至３０μｍで
ある。The fine particles (claim 11) preferably have a particle size of 5 to 30 μm in order to increase the polishing rate.
【００３０】又、この発明の研磨布を用いた半導体装置
の製造方法（請求項１２）は、基板上に絶縁膜を形成し
た後、前記絶縁膜を通して前記基板に配線溝を設ける工
程と、前記基板及び前記配線溝上に金属配線層を設ける
工程と、 前記配線溝中に前記金属配線を埋設する工程
と、表面でスラリーを保持し、且つ被研磨材の表面を機
械的に研磨する母材と、前記母材中に分散され、溶媒に
対して可溶である微粒子とより成る研磨布によって、前
記配線溝中に埋設された前記金属配線の不要部分を研磨
し除去し、前記金属配線の表面を平坦化する工程と、を
含む。Also, a method of manufacturing a semiconductor device using a polishing cloth according to the present invention (claim 12) includes, after forming an insulating film on a substrate, providing a wiring groove in the substrate through the insulating film. A step of providing a metal wiring layer on the substrate and the wiring groove; a step of burying the metal wiring in the wiring groove; and a base material for holding the slurry on the surface and mechanically polishing the surface of the material to be polished. An unnecessary portion of the metal wiring buried in the wiring groove is polished and removed by a polishing cloth comprising fine particles dispersed in the base material and soluble in a solvent, and a surface of the metal wiring is removed. And flattening.
【００３１】このとき、前記金属配線は、主成分がＡｌ
（請求項１３）であり、主成分がＣｕ（請求項１４）で
あり、又は、主成分がＷ（請求項１５）である。At this time, the main component of the metal wiring is Al.
(Claim 13), and the main component is Cu (claim 14), or the main component is W (claim 15).
【００３２】更に、この発明の研磨布を用いた半導体の
製造方法（請求項１６）は、基板に溝を設ける工程と、
前記基板上に酸化膜を設け、前記溝内に前記酸化膜を埋
設する工程と、表面でスラリーを保持し、且つ被研磨材
の表面を機械的に研磨する母材と、前記母材中に分散さ
れ、溶媒に対して可溶である微粒子とより成る研磨布に
よって、前記配線溝中に埋設された酸化膜の不要部分を
研磨し除去し、前記酸化膜の表面を平坦化する工程と；
を含む。Further, in the method of manufacturing a semiconductor using the polishing cloth according to the present invention (claim 16), a step of providing a groove in the substrate;
A step of providing an oxide film on the substrate, embedding the oxide film in the groove, holding a slurry on the surface, and mechanically polishing the surface of the material to be polished; Polishing and removing unnecessary portions of the oxide film buried in the wiring grooves with a polishing cloth made of fine particles dispersed and soluble in a solvent, and planarizing the surface of the oxide film;
including.
【００３３】このとき、前記酸化膜（請求項１７）は、
好ましくはＳｉＯ２である。At this time, the oxide film (Claim 17) is
Preferably, it is SiO 2 .
【００３４】[0034]
【発明の実施の形態】本発明の実施形態を説明する前
に、性能上、理想的な研磨布の構成について図１３を参
照して説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Before describing an embodiment of the present invention, a configuration of an ideal polishing pad in terms of performance will be described with reference to FIG.
【００３５】安定した研磨速度、被研磨材の表面の高い
平坦化性能、及びスクラッチ発生の抑制及び長寿命の条
件を満足させるには、図１３に示すような研磨布が考え
られる。In order to satisfy the conditions of a stable polishing rate, high flatness of the surface of the material to be polished, suppression of scratch generation and long life, a polishing cloth as shown in FIG. 13 can be considered.
【００３６】内層５１は、平坦化性を確保するために硬
い方がよい。表面層５２は、スクラッチの発生を低減さ
せるために、軟らかいことが好ましい。ただし、軟らか
い表面層５２は、平坦化性の悪化を防ぐため、極薄い方
が好ましい。また、表面層５２は、スラリーを保持する
ために、適度の表面積を有している方がよい。It is preferable that the inner layer 51 is hard in order to secure flatness. The surface layer 52 is preferably soft in order to reduce the occurrence of scratches. However, it is preferable that the soft surface layer 52 be extremely thin in order to prevent deterioration in flatness. The surface layer 52 preferably has an appropriate surface area to hold the slurry.
【００３７】本発明の研磨布は、上記した条件を全て兼
ね備えている。研磨布の内部は、母材中に微粒子が分散
されているので、硬い構成となっている。また、従来の
研磨布ＩＣ−１０００のように空孔が存在しないので硬
くなっている。The polishing cloth of the present invention has all of the above conditions. The inside of the polishing cloth has a hard structure because fine particles are dispersed in the base material. Also, unlike the conventional polishing pad IC-1000, there are no holes, so that the polishing pad is hard.
【００３８】また、研磨布の表面層は、表面に露出した
水溶性の微粒子が溶媒に溶けて凹部が形成されている
為、表面に凹凸が形成されて表面層が広くなり、スラリ
ーの保持性が良い。In addition, since the surface layer of the polishing cloth has concave portions formed by dissolving the water-soluble fine particles exposed on the surface in the solvent, the surface layer becomes uneven due to the unevenness formed on the surface, and the slurry retainability is improved. Is good.
【００３９】また、表面に凹凸が形成されると、内部に
比べて軟らかくなるので、スクラッチの発生が抑制され
る。Further, if the surface has irregularities, it becomes softer than the inside, so that the occurrence of scratches is suppressed.
【００４０】又、本発明の他の実施形態であるが、前記
微粒子の表面をコーティングすると、複数の微粒子同士
が接触していても、接触していた微粒子が全て溶けるこ
とがない。In another embodiment of the present invention, when the surface of the fine particles is coated, even if a plurality of fine particles are in contact with each other, all of the fine particles in contact are not dissolved.
【００４１】接触する全ての微粒子が溶けると大きな凹
部が形成されて内部の層まで軟らかくなってしまうが、
表面をコーティングすることによって、溶媒に溶けるの
は、表面に露出した微粒子だけであり、接触する全ての
微粒子が溶けることがないので大きな凹部が形成される
ことがない。When all the contacting fine particles are dissolved, a large concave portion is formed and the inner layer is softened.
By coating the surface, only the fine particles exposed on the surface are dissolved in the solvent, and since all the contacting fine particles are not dissolved, no large concave portion is formed.
【００４２】前記溶媒が、水またはスラリーであると、
研磨工程の際に表面が削られても、新たに露出した微粒
子が、水またはスラリーにとけ出すので、研磨中の性能
の劣化が少ない。When the solvent is water or slurry,
Even if the surface is shaved during the polishing step, newly exposed fine particles dissolve in water or slurry, so that the performance during polishing is less deteriorated.
【００４３】また、微粒子の粒径が５乃至３０μｍの場
合、研磨速度が速い。When the particle size of the fine particles is 5 to 30 μm, the polishing rate is high.
【００４４】より具体的に、本発明の実施の形態を図１
以降の図面を参照して説明する。More specifically, the embodiment of the present invention is shown in FIG.
This will be described with reference to the following drawings.
【００４５】［第１の実施形態］図２は、本発明の第１
の実施形態に係わるＣＭＰ用研磨布の構成を示す断面図
である。この研磨布１０は、例えばポリスチレンからな
る母材１１中に、２５ｗｔ％程度に例えばセルロースか
らなる水溶性フィラー１２が分散混入されている。[First Embodiment] FIG. 2 shows a first embodiment of the present invention.
It is sectional drawing which shows the structure of the polishing pad for CMP which concerns on embodiment. The polishing pad 10 has a base material 11 made of, for example, polystyrene and a water-soluble filler 12 made of, for example, cellulose dispersed therein at about 25 wt%.
【００４６】母材１１は硬く、水溶性フィラー１２は、
固体であるため圧縮されにくいため、研磨布１０の圧縮
弾性率は、１０ＧＰａ以上である。The base material 11 is hard, and the water-soluble filler 12 is
The compression elastic modulus of the polishing pad 10 is 10 GPa or more because it is hard to be compressed because it is solid.
【００４７】研磨布１０の表面に水溶性フィラー１２が
露出すると、水に対して溶けてしまうので、凹部が形成
されて表面積が大きくなる。表面積が大きくなると、軟
らかくなるので、研磨の際に被研磨材の表面にスクラッ
チが形成されず、且つスラリーの保持性が良くなる。When the water-soluble filler 12 is exposed on the surface of the polishing cloth 10, it is dissolved in water, so that a concave portion is formed and the surface area becomes large. When the surface area is increased, the surface is softened, so that no scratch is formed on the surface of the material to be polished at the time of polishing and the slurry retainability is improved.
【００４８】また、この軟らかい表面層は、水溶性フィ
ラーの粒径及び混入率を制御することによって、表面に
形成される凹部の密度及びその厚さが変化するので、そ
の厚さを容易に制御することが可能である。従って、水
溶性フィラーの粒径及び混入率の制御によって、表面層
の柔らかさ及びその厚さを制御することが容易にでき
る。Further, the density and thickness of the concave portions formed on the surface of the soft surface layer can be easily controlled by controlling the particle size and the mixing ratio of the water-soluble filler. It is possible to Therefore, the softness of the surface layer and the thickness thereof can be easily controlled by controlling the particle size and the mixing ratio of the water-soluble filler.
【００４９】研磨布１０、並びに従来の代表的な研磨布
であるポリテックス及びＩＣ−１０００を用いて、０．
５％のＣｕを含むＡｌ材の研磨を行った場合の研磨速度
及びスクラッチ発生の有無を表１に示す。Using a polishing cloth 10 and a conventional typical polishing cloth, Polytex and IC-1000, the polishing cloth is set at 0.1.
Table 1 shows the polishing rate and the presence / absence of scratches when the Al material containing 5% Cu was polished.
【００５０】[0050]
【表１】 [Table 1]
【００５１】従来の研磨布ＩＣ−１０００の場合、コン
ディショニング処理を行わないと、研磨速度が６０ｎｍ
／ｍｉｎであり、コンディショニング処理を行った場合
の研磨速度２１０ｎｍ／ｍｉｎに比べて極端に遅くなっ
ている。In the case of the conventional polishing cloth IC-1000, if the conditioning process is not performed, the polishing speed is 60 nm.
/ Min, which is extremely lower than the polishing rate of 210 nm / min when the conditioning process is performed.
【００５２】コンディショニング処理を行わない研磨速
度が遅いのは、研磨布の表面層でスラリーの保持が行わ
れていないためだと考えられる。It is considered that the reason why the polishing rate without the conditioning treatment is low is that the slurry is not held on the surface layer of the polishing pad.
【００５３】それに対し、本実施形態の研磨布は、コン
ディショニング処理を行わなくても２０５ｎｍ／ｍｉｎ
と大きな研磨速度が得られた。これは、研磨布表面に露
出した水溶性フィラーが水（スラリー）に溶け、水溶性
フィラーの存在していた領域が凹部となって表面積が大
きくなるため、スラリーの保持性が良くなるためであ
る。On the other hand, the polishing pad of the present embodiment is 205 nm / min without performing the conditioning process.
And a large polishing rate were obtained. This is because the water-soluble filler exposed on the polishing cloth surface dissolves in water (slurry), and the area where the water-soluble filler was present becomes a concave portion to increase the surface area, thereby improving the slurry retention. .
【００５４】コンディショニング処理を行わない研磨速
度が遅いのは、表面層でスラリーの保持が行われていな
いためだと考えられる。It is considered that the reason why the polishing rate without the conditioning treatment is low is that the slurry is not held in the surface layer.
【００５５】それに対し、本実施形態の研磨布は、コン
ディショニング処理を行わなくても２０５ｎｍ／ｍｉｎ
と大きな研磨速度が得られた。これは、研磨布表面に露
出した水溶性フィラーが水（スラリー）に溶け、水溶性
フィラーの存在していた領域が凹部となって表面積が大
きくなるため、スラリーの保持性が良くなるためであ
る。On the other hand, the polishing pad of the present embodiment is 205 nm / min without performing the conditioning process.
And a large polishing rate were obtained. This is because the water-soluble filler exposed on the polishing cloth surface dissolves in water (slurry), and the area where the water-soluble filler was present becomes a concave portion to increase the surface area, thereby improving the slurry retention. .
【００５６】コンディショニング処理を行わない研磨速
度が遅いのは、表面層でスラリーの保持が行われていな
いためだと考えられる。It is considered that the reason why the polishing rate without the conditioning treatment is low is that the slurry is not held in the surface layer.
【００５７】それに対し、本実施形態の研磨布は、コン
ディショニング処理を行わなくても２０５ｎｍ／ｍｉｎ
と大きな研磨速度が得られた。これは、研磨布表面に露
出した水溶性フィラーが水（スラリー）に溶け、水溶性
フィラーの存在していた領域が凹部となって表面積が大
きくなるため、スラリーの保持性が良くなるためであ
る。On the other hand, the polishing pad according to the present embodiment has a thickness of 205 nm / min without performing the conditioning process.
And a large polishing rate were obtained. This is because the water-soluble filler exposed on the polishing cloth surface dissolves in water (slurry), and the area where the water-soluble filler was present becomes a concave portion to increase the surface area, thereby improving the slurry retention. .
【００５８】コンディショニング処理を行わない研磨速
度が遅いのは、研磨布の表面層でスラリーの保持が行わ
れていないためだと考えられる。It is considered that the reason why the polishing rate without the conditioning treatment is low is that the slurry is not held on the surface layer of the polishing pad.
【００５９】それに対し、本実施形態の研磨布は、コン
ディショニング処理を行わなくても２０５ｎｍ／ｍｉｎ
と大きな研磨速度が得られた。これは、研磨布表面に露
出した水溶性フィラーが水（スラリー）に溶け、水溶性
フィラーの存在していた領域が凹部となって表面積が大
きくなるため、スラリーの保持性が良くなるためであ
る。On the other hand, the polishing pad of the present embodiment is 205 nm / min without performing the conditioning process.
And a large polishing rate were obtained. This is because the water-soluble filler exposed on the polishing cloth surface dissolves in water (slurry), and the area where the water-soluble filler was present becomes a concave portion to increase the surface area, thereby improving the slurry retention. .
【００６０】また、本実施形態の研磨布は、研磨速度が
安定して得られていた。これは、研磨中に母材１１の表
面層が少しずつすり減ってゆきながら、水溶性フィラー
１２が露出し、スラリーによって水溶性フィラー１２が
溶けてしまい、新たな凹部が形成されるためである。Further, the polishing cloth of this embodiment was obtained with a stable polishing rate. This is because the water-soluble filler 12 is exposed while the surface layer of the base material 11 gradually wears during polishing, and the water-soluble filler 12 is melted by the slurry, so that a new concave portion is formed.
【００６１】また、研磨布１０のコンディショニングを
行いながら使用した場合、コンディショニングを行わな
いものや、ポリテックスや従来の研磨布ＩＣ−１０００
に比べて非常に大きな、３１０ｎｍ／ｍｉｎの研磨速度
が得られた。When the polishing pad 10 is used while being conditioned, it may be used without conditioning, or may be made of Polytex or a conventional polishing pad IC-1000.
, A polishing rate of 310 nm / min, which was much higher than that of
【００６２】また、被研磨材としての図３に示す試料を
用いて、ディッシング量の評価を行った。前記試料は、
Ｓｉ基板２１上に凹凸を有するシリコン酸化膜２２が形
成され、このシリコン酸化膜２２の全面にＡｌ膜２３が
堆積されている。The dishing amount was evaluated using the sample shown in FIG. 3 as the material to be polished. The sample is
A silicon oxide film 22 having irregularities is formed on a Si substrate 21, and an Al film 23 is deposited on the entire surface of the silicon oxide film 22.
【００６３】なお、Ａｌ膜２３の膜厚は８００ｎｍ、シ
リコン酸化膜２２の膜厚は、７００ｎｍ、シリコン酸化
膜２２に形成された凹部の高さは４００ｎｍである。ま
た、凹部の幅Ａと、凹部の配置間隔Ｂの関係が、Ａ／
（Ａ＋Ｂ）が０．７になるようにしつつ、凹部の幅Ａを
１０μｍと１００μｍの場合で評価を行った。The thickness of the Al film 23 is 800 nm, the thickness of the silicon oxide film 22 is 700 nm, and the height of the recess formed in the silicon oxide film 22 is 400 nm. The relationship between the width A of the concave portion and the interval B between the concave portions is A /
The evaluation was performed when the width A of the concave portion was 10 μm and 100 μm while (A + B) was 0.7.
【００６４】なお、Ａｌ膜２３が研磨され、表面が２３
ｂまで研磨された際のディッシング量で評価を行った。The Al film 23 is polished and the surface is
The evaluation was performed based on the dishing amount when polishing was performed to b.
【００６５】ディッシング量の評価結果を表２に示す。Table 2 shows the evaluation results of the dishing amount.
【００６６】[0066]
【表２】 [Table 2]
【００６７】非常に軟らかい研磨布であるポリテックス
を用いて研磨を行った場合のディッシング量は、１０ｎ
ｍの配線間隔でも１６０ｎｍあり、１００ｎｍの配線間
隔Ａでは３５０ｎｍ以上もあった。The dishing amount when polishing is performed using Polytex which is a very soft polishing cloth is 10 n
The wiring spacing of m was 160 nm, and the wiring spacing A of 100 nm was 350 nm or more.
【００６８】また、コンディショニングが行われた従来
の研磨布ＩＣ−１０００を用いて研磨を行った場合のデ
ィッシング量は、８０ｎｍ（Ａ＝１０μｍ），２１０ｎ
ｍ（Ａ＝１００μｍ）であり、ポリテックスを用いた場
合よりは改善されているが、やはり非常に大きい値であ
る。The dishing amount when polishing is performed using the conventional polishing cloth IC-1000 which has been conditioned is 80 nm (A = 10 μm), 210 n
m (A = 100 μm), which is an improvement over the case where polytex is used, but still a very large value.
【００６９】コンディショニングによりＩＣ−１０００
の表面層には軟らかい層が形成されて研磨の際に被研磨
材の表面層における平坦化性に悪影響を及ぼすため、コ
ンディショニングを行わないで研磨を行ったほうが、デ
ィッシング量が小さくなると考えられる。IC-1000 by conditioning
Since a soft layer is formed on the surface layer of (1) and adversely affects the flatness of the surface layer of the material to be polished during polishing, it is considered that the amount of dishing is reduced by performing polishing without performing conditioning.
【００７０】ところが、結果は逆で、コンディショニン
グを行わずに研磨を行った場合のディッシング量は、２
００ｎｍ（Ａ＝１０μｍ），２５０ｎｍ（Ａ＝１００μ
ｍ）であり、コンディショニングを行った場合よりも悪
くなっている。However, the result is opposite, and the dishing amount when polishing is performed without performing conditioning is 2
00 nm (A = 10 μm), 250 nm (A = 100 μm)
m), which is worse than when conditioning is performed.
【００７１】これは、コンディショニングを行わない
と、Ａｌの表面に深い傷（＞２００ｎｍ）がつき、傷が
拡大する形でＡｌの浸食が進むためである。This is because, if the conditioning is not performed, a deep flaw (> 200 nm) is formed on the surface of Al, and the erosion of Al proceeds in a form in which the flaw is enlarged.
【００７２】これらの結果に対し、コンディショニング
が行われていない本発明の上記実施形態の研磨布１０を
用いて研磨を行った場合のディッシング量は、間隔Ａが
１０μｍのもので８ｎｍ、間隔Ａが１００μｍのもので
４０ｎｍであり、ディッシングが著しく改善されてい
る。In contrast to these results, the dishing amount when the polishing was performed using the polishing cloth 10 of the above embodiment of the present invention in which the conditioning was not performed was 8 nm when the interval A was 10 μm and the dishing amount was 8 nm. The thickness is 100 nm, which is 40 nm, and the dishing is remarkably improved.
【００７３】母材自体の圧縮弾性率が１０ＧＰａと非常
に硬いこと、また表面層の軟らかい層が、被研磨材表面
にスクラッチを生じさせず、且つ母材表面がスラリーを
十分に保持し、この表面層の軟らかい層の厚さが、非常
に薄くなるよう制御されていることのためディッシング
の改善がなされた。The base material itself has a very high compression modulus of 10 GPa, and the soft surface layer does not cause scratches on the surface of the material to be polished, and the surface of the base material sufficiently holds the slurry. The dishing was improved because the thickness of the soft layer of the surface layer was controlled to be very thin.
【００７４】また、コンディショニング処理が行われた
研磨布１０を用いて研磨した場合のディッシング量は、
２０ｎｍ（Ａ＝１０μｍ），８０ｎｍ（Ａ＝１００μ
ｍ）であった。The dishing amount when polishing is performed using the polishing pad 10 which has been subjected to the conditioning process is as follows:
20 nm (A = 10 μm), 80 nm (A = 100 μm)
m).
【００７５】ディッシング量が悪化したのは、コンディ
ショニングにより、研磨布の表面の軟らかい層がより軟
らかくなった為か、軟らかい層が厚くなった為、若しく
はその両方のためである。The reason why the dishing amount was deteriorated is that the soft layer on the surface of the polishing pad became softer due to the conditioning, or the soft layer became thicker, or both.
【００７６】次に、水溶性フィラー１２の粒径を変えて
Ａｌ膜に対する研磨速度の評価を行った。なお、全ての
粒径で水溶性フィラーの濃度を２５ｗｔ％に固定して研
磨布を製造した。その結果を表３に示す。Next, the polishing rate for the Al film was evaluated by changing the particle size of the water-soluble filler 12. In addition, the polishing pad was manufactured by fixing the concentration of the water-soluble filler at 25 wt% at all particle diameters. Table 3 shows the results.
【００７７】[0077]
【表３】 [Table 3]
【００７８】表３から、水溶性フィラー１２の粒径に応
じて研磨速度が変化していることが確認された。粒径が
１μｍの場合、被研磨材であるＡｌ膜の表面に多数のス
クラッチが発生していた。From Table 3, it was confirmed that the polishing rate changed according to the particle size of the water-soluble filler 12. When the particle size was 1 μm, a large number of scratches were generated on the surface of the Al film as the material to be polished.
【００７９】これは、研磨布の粒径が小さすぎるため、
研磨布の表面に形成される凹凸が微細すぎて、表面に軟
らかな層が形成されなかったのと同時に、スラリーの保
持が困難であったためである。This is because the particle size of the polishing cloth is too small.
This is because the unevenness formed on the surface of the polishing cloth was too fine, so that a soft layer was not formed on the surface, and at the same time, it was difficult to hold the slurry.
【００８０】一方、粒径が５０μｍ及び１００μｍの場
合、研磨速度が遅くなっている。これは、凹凸が大きす
ぎたためと考えられる。以上の結果から、水溶性フィラ
ーの粒径は、５乃至３０μｍ程度が好ましいと言える。On the other hand, when the particle size is 50 μm or 100 μm, the polishing rate is low. This is probably because the irregularities were too large. From the above results, it can be said that the particle size of the water-soluble filler is preferably about 5 to 30 μm.
【００８１】以上説明したように、本実施形態の研磨布
は、凹凸が形成され軟らかい表面層と、母材及び固体の
水溶性フィラーからなる硬い内部層とから構成されてい
るので、理想的な研磨布にほぼ等しくなる。As described above, the polishing cloth of the present embodiment is composed of the soft surface layer having irregularities formed thereon and the hard inner layer composed of the base material and the solid water-soluble filler. It is almost equal to polishing cloth.
【００８２】従って、研磨布の凹凸のある軟らかい表面
層によって、研磨速度の向上及び被研磨材の表面層に生
ずるスクラッチの形成が抑制されると共に、研磨布の内
部の硬い層によって平坦化の向上を図ることができる。Therefore, the polishing surface is improved by the soft surface layer having the unevenness of the polishing pad, and the formation of scratches generated in the surface layer of the material to be polished is suppressed, and the flattening is improved by the hard layer inside the polishing pad. Can be achieved.
【００８３】また、本発明の研磨布は、母材の表面層が
削れても新しい、水溶性フィラーが露出して水又はスラ
リーに溶け出すので、常に表面層に軟らかい層が存在す
るので、安定した研磨速度を得ることができる。In addition, the polishing pad of the present invention has a stable surface layer since a new water-soluble filler is exposed and is dissolved in water or slurry even if the surface layer of the base material is shaved. It is possible to obtain a reduced polishing rate.
【００８４】また、軟らかい表面層が自動的に形成され
るので、コンディショニング処理をほとんど必要としな
いので、研磨布の寿命が長くなる。Further, since a soft surface layer is automatically formed, a conditioning treatment is hardly required, and the life of the polishing pad is prolonged.
【００８５】（第２実施形態）図４は、本発明の第２実
施形態に係わる研磨布の構成を示す断面図である。(Second Embodiment) FIG. 4 is a sectional view showing the structure of a polishing pad according to a second embodiment of the present invention.
【００８６】なお、図４において、図２と同一なものに
は同一符号を付し、その詳細な説明を省略する。In FIG. 4, the same components as those in FIG. 2 are denoted by the same reference numerals, and detailed description thereof will be omitted.
【００８７】本実施形態の特徴は、水溶性フィラー１２
の表面が、水（スラリー）に対して不溶性の材料からな
るコーティング層３１でコーティングされていることで
ある。This embodiment is characterized in that the water-soluble filler 12
Is coated with a coating layer 31 made of a material insoluble in water (slurry).
【００８８】水溶性フィラーを多量に母材中に混入させ
た場合、水溶性フィラー同士が接触する確率が高くな
る。複数の水溶性フィラー同士が接触した状態で、水に
つけると、図５に示すように、深い凹部４１が形成され
てしまう。When a large amount of the water-soluble filler is mixed into the base material, the probability that the water-soluble filler contacts each other increases. When immersed in water in a state where a plurality of water-soluble fillers are in contact with each other, a deep concave portion 41 is formed as shown in FIG.
【００８９】しかし、本実施形態のように、コーティン
グ層でコーティングすることで、接触している水溶性フ
ィラー１２が、全て溶けることがない。従って、母材内
の奥深くまで凹部が形成されることによる、弾性率の低
下を防ぐことができる。However, by coating with the coating layer as in the present embodiment, the water-soluble fillers 12 in contact with each other are not completely dissolved. Therefore, it is possible to prevent the elastic modulus from being lowered due to the concave portion being formed deep inside the base material.
【００９０】なお、本発明は、上記実施形態に限定され
るものではない。例えば、上記実施形態では、母材とし
てポリスチレンを、また水溶性フィラーとしてセルロー
スを例として挙げたが、他の材料を用いることができ
る。The present invention is not limited to the above embodiment. For example, in the above embodiment, polystyrene was used as the base material and cellulose was used as the water-soluble filler, but other materials can be used.
【００９１】また、固体の水溶性フィラーの代わりに、
液体を母材中に分散混入させても良い。液体は、固体に
比べて軟らかいが、気体に比べれば十分硬いので、水溶
性フィラーの替わりに用いることができる。もちろん、
表面に露出した液体は流れ出るので、液体が存在してい
た領域に凹部が形成され、固体の水溶性フィラーと同様
の効果を持つ。Also, instead of a solid water-soluble filler,
A liquid may be dispersed and mixed in the base material. Liquids are softer than solids but sufficiently harder than gases, and can be used instead of water-soluble fillers. of course,
Since the liquid exposed on the surface flows out, a concave portion is formed in a region where the liquid was present, and has the same effect as a solid water-soluble filler.
【００９２】また、母材中に混入される微粒子として
は、水溶性だけでなく、他の溶媒に対して溶けるような
もので有ればよい。研磨処理を行う前に、研磨布の表面
に微粒子を溶かし得る溶媒を浴びせることによって微粒
子を溶かし凹部を形成すればよい。The fine particles to be mixed into the base material may be not only water-soluble but also soluble in other solvents. Before performing the polishing treatment, the surface of the polishing pad may be bathed with a solvent capable of dissolving the fine particles, thereby dissolving the fine particles and forming the concave portions.
【００９３】次に、上記研磨布を用いて、配線溝を有す
るダマシン配線構造の半導体装置を製造する方法の実施
態様について説明する。Next, an embodiment of a method for manufacturing a semiconductor device having a damascene wiring structure having a wiring groove using the above-mentioned polishing cloth will be described.
【００９４】図６は、ＳｉＯ２基板１に設けられた配線
溝２中にＡｌ配線３を埋め込むダマシン配線構造の部分
的な断面図を示している。FIG. 6 is a partial cross-sectional view of a damascene wiring structure in which an Al wiring 3 is buried in a wiring groove 2 provided in a SiO 2 substrate 1.
【００９５】配線溝２の深さは、４，０００Å（オング
ストローム）、幅は、１００μm、及び研磨前における
Ａｌ配線３のＡｌ層の厚さを８，０００Å（オングスト
ローム）とする。The depth of the wiring groove 2 is 4,000 ° (angstrom), the width is 100 μm, and the thickness of the Al layer of the Al wiring 3 before polishing is 8,000 ° (angstrom).
【００９６】このような構造で、配線溝２にＡｌ配線３
を埋め込み、上方からＡｌ配線３の表面を研磨布で研磨
したとき、ＳｉＯ２基板１の表面以下の溝内にまでオー
バーポリシング（Over Polishing）してしまい、いわゆ
るデッシング（Dishing）又は シニング（Thinning）
が生じてしまう。With such a structure, the Al wiring 3 is formed in the wiring groove 2.
When the surface of the Al wiring 3 is polished from above with a polishing cloth, overpolishing is performed to a groove below the surface of the SiO 2 substrate 1, so-called dishing or thinning.
Will occur.
【００９７】この実施態様において、荷重３００g/ｃｍ
2 、テーブル及びキャリアの回転数５０rpmで平坦性の
評価を行った。その結果、配線溝２に埋め込まれたＡｌ
配線３上のスクラッチは、ＫＬＡで評価を行ったとこ
ろ、従来の研磨布ＩＣ−１０００では、４２，３２８個
／Wafer、観察された。In this embodiment, a load of 300 g / cm
2. The flatness was evaluated at a rotation speed of the table and the carrier of 50 rpm. As a result, the Al embedded in the wiring groove 2
When the scratches on the wiring 3 were evaluated by KLA, 42,328 pieces / Wafer were observed in the conventional polishing pad IC-1000.
【００９８】これに対し、本発明の研磨布は、３２０個
の／Waferのスクラッチが観察されたに過ぎなかった。
本発明の研磨布において、デッ
シング（Dishing）の発生が従来の研磨布と比較して格
段に改善されたことを図７に示す。On the other hand, in the polishing cloth of the present invention, only 320 scratches of / Wafer were observed.
FIG. 7 shows that the occurrence of dishing in the polishing cloth of the present invention has been remarkably improved as compared with the conventional polishing cloth.
【００９９】従来の研磨布ＩＣ−１０００を用いてＡｌ
配線３を研磨したときに発生するデッシング（Dishin
g）の数は、点線で示すようにオーバーポリシング（Ove
r Polishing）が溝の深さの６０％に至ると３５００Dis
hing（Å）を越えてしまう。[0099] Using a conventional polishing cloth IC-1000,
Deshing generated when the wiring 3 is polished (Dishin
g) is over-polishing (Ove
r Polishing) reaches 3500Dis when it reaches 60% of the groove depth.
hing (Å).
【０１００】これに対して本発明の内部に分散された微
粒子を含む研磨布は、Ａｌ２Ｏ３を３ｗｔ％、（Ｎ
Ｈ４）２Ｓ２Ｏ８を１ｗｔ％、及びベンズトリアゾール
を０．０２％としたスラリーを表面に保持させたものを
採用して、Ａｌ配線３の表面を研磨したとき、発生する
デッシング（Dishing) の数は、実線で示すようにオー
バポリシングス（Over Polishing）が溝の深さの６０％
に達したときであっても、殆ど増加しない。On the other hand, the polishing pad of the present invention containing fine particles dispersed therein contained 3 wt% of Al 2 O 3 and (N
Dishing that occurs when the surface of the Al wiring 3 is polished by using a slurry in which a slurry containing H 4 ) 2 S 2 O 8 at 1 wt% and benzotriazole at 0.02% is held on the surface. ) Indicates that the over polishing is 60% of the groove depth as shown by the solid line.
Does not increase substantially even when
【０１０１】このことは、Ａｌ配線３の品質、特性が向
上したことを意味し配線形成が良好に行われたと言え
る。This means that the quality and characteristics of the Al wiring 3 have been improved, and it can be said that the wiring has been formed favorably.
【０１０２】図８は、ＳｉＯ２基板１に設けられた配線
溝２中にＣｕ配線4を埋め込むダマシン配線構造の部分
的な断面図を示している。FIG. 8 is a partial cross-sectional view of a damascene wiring structure in which a Cu wiring 4 is buried in a wiring groove 2 provided in a SiO 2 substrate 1.
【０１０３】配線溝２の深さは、４，０００Å（オング
ストローム）、幅は、１００μm、及び研磨前における
Ｃｕ配線４のＣｕ層の厚さを８，０００Å（オングスト
ローム）とする。The depth of the wiring groove 2 is 4,000 ° (angstrom), the width is 100 μm, and the thickness of the Cu layer of the Cu wiring 4 before polishing is 8,000 ° (angstrom).
【０１０４】本発明の研磨布において、デッシング（Di
shing)の発生が従来の研磨布と比較して格段に改善され
たことを図９に示す。In the polishing cloth of the present invention, the dishing (Di
FIG. 9 shows that occurrence of shing) was remarkably improved as compared with the conventional polishing cloth.
【０１０５】従来の研磨布ＩＣ−１０００を用いてＣｕ
配線4を研磨したときに発生するデッシング（Dishing)
の数は、点線で示すようにオーバポリシング（Over Pol
ishing）が溝の深さの６０％に至ると３５００Dishing
（Å）の近傍に達する。Using a conventional polishing cloth IC-1000, Cu
Dishing that occurs when the wiring 4 is polished
The overpolishing (Over Poling)
3500Dishing when the ishing reaches 60% of the groove depth
(近 傍).
【０１０６】これに対して、本発明の実施態様の、内部
に分散された微粒子を含む研磨布は、Ａｌ２Ｏ３を１ｗ
ｔ％、（ＮＨ４）２Ｓ２Ｏ８を１ｗｔ％ 及びベンズト
リアゾールを０．０５％としたスラリーを表面に保持さ
せたものを採用して、Ｃｕ配線4の表面を研磨したと
き、発生するデッシング（Dishing) の数は、実線で示
すようにオーバポリシング（Over Polishing）が溝の深
さの６０％に達したときであっても、僅かしか増加しな
い。On the other hand, the polishing pad according to the embodiment of the present invention containing fine particles dispersed therein contained Al 2 O 3 for 1 watt.
This is generated when the surface of the Cu wiring 4 is polished by using a slurry having a slurry containing t%, (NH 4 ) 2 S 2 O 8 1 wt% and benzotriazole 0.05% on the surface. As shown by the solid line, the number of dishing increases only slightly even when the over polishing reaches 60% of the groove depth.
【０１０７】図１０は、ＳｉＯ２基板１に設けられた配
線溝２中にＷ配線層５を埋め込むダマシン配線構造の部
分的な断面図を示している。FIG. 10 is a partial cross-sectional view of a damascene wiring structure in which a W wiring layer 5 is buried in a wiring groove 2 provided in a SiO 2 substrate 1.
【０１０８】配線溝２の深さは、４，０００Å（オング
ストローム）、幅は、１００μm、及び研磨前における
Ｗ配線層５のＷ層の厚さを８，０００Å（オングストロ
ーム）とする。The depth of the wiring groove 2 is 4,000 ° (angstrom), the width is 100 μm, and the thickness of the W layer of the W wiring layer 5 before polishing is 8,000 ° (angstrom).
【０１０９】本発明の研磨布において、デッシング（Di
shing)の発生が従来の研磨布と比較して格段に改善され
たことを図１１に示す。In the polishing cloth of the present invention, the dishing (Di
FIG. 11 shows that the occurrence of shing) was remarkably improved as compared with the conventional polishing cloth.
【０１１０】従来の研磨布ＩＣ−１０００を用いてＷ配
線５を研磨したときに発生するデッシング（Dishing)の
数は、点線で示すようにオーバポリシング（Over Polis
hing）が溝の深さの６０％に至ると３５００Dishing ／
Åを越える。The number of dishings that occur when the W wiring 5 is polished using the conventional polishing cloth IC-1000 is determined by overpolishing as shown by a dotted line.
hing) reaches 3500 Dishing /
Go over Å.
【０１１１】これに対して本発明の内部に分散された微
粒子を含む研磨布は、Ａｌ２Ｏ３を３ｗｔ％、Ｆｅ（Ｎ
Ｏ３）３を５ｗｔ％ としたスラリーを表面に保持させ
たものを採用して、Ｗ配線５の表面を研磨したとき、発
生するデッシング（Dishing)の数は、実線で示すように
オーバポリシング（Over Polishing）が溝の深さの６０
％に達したときであっても、僅かしか増加しない。On the other hand, the polishing pad of the present invention containing fine particles dispersed therein contained 3 wt% of Al 2 O 3 and Fe (N
When the surface of the W wiring 5 is polished by using a slurry having 5 wt% of O 3 ) 3 held on the surface thereof, the number of dishings generated when the surface of the W wiring 5 is polished is indicated by overpolishing (solid line). Over Polishing) has a groove depth of 60
Even when it reaches%, it increases only slightly.
【０１１２】次に、本発明の他の実施態様として、図１
２に示すように、Ｓｉ基板１上の厚さ１４，０００Å
（オングストローム）の酸化膜６を、深さ７，０００Å
（オングストローム）、幅が、１００μmの配線溝２内
に埋設し、本発明の研磨布で酸化膜６を上面から研磨す
る。このときのスラリーは、Cabot社製ＳＣ−１を純水
で３倍希釈したものを用いる。Next, as another embodiment of the present invention, FIG.
As shown in FIG. 2, a thickness of 14,000 基板
(Angstrom) oxide film 6 with a depth of 7,000 mm
(Angstrom), buried in the wiring groove 2 having a width of 100 μm, and the oxide film 6 is polished from the upper surface with the polishing cloth of the present invention. At this time, a slurry obtained by diluting SC-1 manufactured by Cabot three times with pure water is used.
【０１１３】その結果、図１３に示すように、従来の研
磨布ＩＣ−１０００と本発明の研磨布とを比較したと
き、同一のオキサイド・リムーバル（Oxide Removal）
量Å（オングストローム）を得るのに、リメイニング・
ステップ（RemainingStep）量Å（オングストローム）
は、本発明の研磨布の方がより理想的曲線に近付いてい
ることが分かる。As a result, as shown in FIG. 13, when the conventional polishing cloth IC-1000 was compared with the polishing cloth of the present invention, the same oxide removal (Oxide Removal) was observed.
To get the quantity Å (angstrom),
Step (RemainingStep) amountÅ (Angstrom)
Indicates that the polishing cloth of the present invention is closer to the ideal curve.
【０１１４】それによって、本発明の研磨布を用いて酸
化膜の表面を研磨することによって、ばらつきのない平
坦化が実現できる。Thus, by polishing the surface of the oxide film using the polishing cloth of the present invention, it is possible to realize flatness without variation.
【０１１５】その他、本発明は、その要旨を逸脱しない
範囲で、種々変形して実施することが可能である。The present invention can be variously modified and implemented without departing from the gist thereof.
【０１１６】[0116]
【発明の効果】以上説明したように本発明の研磨布によ
れば、被研磨材の表面を機械的に研磨するための母材中
に、溶媒に対して可溶である微粒子を分散混入すること
によって、特に、研磨中に前記微粒子が前記溶媒に溶け
て、研磨布の表面に凹部を形成するので、被研磨材の表
面層上において、高い平坦化性能，安定した研磨速度が
得られ、被研磨材の表面でのスクラッチの発生を抑制で
きる。As described above, according to the polishing cloth of the present invention, fine particles that are soluble in a solvent are dispersed and mixed in a base material for mechanically polishing the surface of a material to be polished. In particular, since the fine particles dissolve in the solvent during polishing and form recesses on the surface of the polishing cloth, high flattening performance and a stable polishing rate can be obtained on the surface layer of the workpiece. Generation of scratches on the surface of the material to be polished can be suppressed.
【０１１７】又、基板上に配線溝を設け、この配線溝中
に金属配線を埋め込み、前記金属配線の不要部分を、母
材中に溶媒に対して可溶である微粒子を分散混入して構
成した研磨布で研磨し除去することにより、前記金属配
線（特にダマシン配線）のクオリティを高めることがで
きる。A wiring groove is provided on a substrate, a metal wiring is buried in the wiring groove, and unnecessary portions of the metal wiring are formed by dispersing and mixing fine particles soluble in a solvent in a base material. The quality of the metal wiring (particularly, damascene wiring) can be improved by polishing and removing with a polishing pad that has been made.
【０１１８】更に、この発明の研磨布を用いた半導体の
製造方法は、配線溝中に金属配線に替え酸化膜を埋設し
た場合でも、本発明の研磨布で研磨することにより、前
記酸化膜の表面を良好に平坦化できる。Further, in the method of manufacturing a semiconductor using the polishing cloth of the present invention, even when an oxide film is buried in the wiring groove in place of the metal wiring, the oxide film is polished by the polishing cloth of the present invention. The surface can be satisfactorily flattened.
【図１】理想的な研磨布の構成を示す模式図。FIG. 1 is a schematic diagram showing a configuration of an ideal polishing cloth.
【図２】本発明の第１実施形態に係わる研磨布の構成を
示す部分的断面図。FIG. 2 is a partial cross-sectional view showing a configuration of the polishing pad according to the first embodiment of the present invention.
【図３】研磨布の評価に用いた被研磨体の構成を部分的
に示す断面図。FIG. 3 is a cross-sectional view partially showing the configuration of a polishing object used for evaluating a polishing cloth.
【図４】本発明の第２の実施形態に係わる研磨布の構成
を示す部分的断面図。FIG. 4 is a partial cross-sectional view showing a configuration of a polishing pad according to a second embodiment of the present invention.
【図５】研磨布の微粒子同士が接触することによって生
ずる問題点を説明するための研磨布の断面図。FIG. 5 is a cross-sectional view of the polishing cloth for explaining a problem caused by contact of fine particles of the polishing cloth.
【図６】本発明の研磨布を用いて研磨される埋め込み配
線（ダマシン配線）構造の金属配線がAl である場合の
半導体装置の形成過程を示す要部断面図。FIG. 6 is an essential part cross sectional view showing the process of forming the semiconductor device in the case where the metal wiring of the embedded wiring (damascene wiring) structure to be polished by using the polishing cloth of the present invention is Al.
【図７】本発明の研磨布を用いて図５に示す金属配線Al
を研磨したときのデッシング（Dishing)の発生を従来例
と比較したときの図。7 shows a metal wiring Al shown in FIG. 5 using the polishing cloth of the present invention.
FIG. 11 is a diagram when the occurrence of dishing when polishing is compared with a conventional example.
【図８】本発明の研磨布を用いて研磨される埋め込み配
線（ダマシン配線）構造の金属配線がCu である場合の
半導体装置の形成過程を示す要部断面図。FIG. 8 is a fragmentary cross-sectional view showing the process of forming a semiconductor device in the case where the metal wiring of the embedded wiring (damascene wiring) structure polished using the polishing cloth of the present invention is Cu.
【図９】本発明の研磨布を用いて図７に示す金属配線Cu
を研磨したときのデッシング（Dishing)の発生を従来例
と比較したときの図。9 shows a metal wiring Cu shown in FIG. 7 using the polishing cloth of the present invention.
FIG. 11 is a diagram when the occurrence of dishing when polishing is compared with a conventional example.
【図１０】本発明の研磨布を用いて研磨される埋め込み
配線（ダマシン配線）構造の金属配線がW である場合の
半導体装置の形成過程を示す要部断面図。FIG. 10 is an essential part cross sectional view showing the forming process of the semiconductor device in the case where the metal wiring of the embedded wiring (damascene wiring) structure polished by using the polishing cloth of the present invention is W 2;
【図１１】本発明の研磨布を用いて図９に示す金属配線
Wを研磨したときのデッシング（Dishing)の発生を従来
例と比較したときの図。FIG. 11 shows a metal wiring shown in FIG. 9 using the polishing cloth of the present invention.
FIG. 9 is a diagram when the occurrence of dishing when W is polished is compared with a conventional example.
【図１２】本発明の半導体装置の製造方法に係る応用例
を示し、基板に設けられた溝中に埋め込まれた酸化膜を
本発明の研磨布を用いて研磨する半導体装置の形成過程
を示す要部断面図。FIG. 12 illustrates an application example according to the method of manufacturing a semiconductor device of the present invention, and illustrates a process of forming a semiconductor device in which an oxide film embedded in a groove provided in a substrate is polished using the polishing cloth of the present invention. FIG.
【図１３】本発明の研磨布を用いて図１０に示す酸化膜
を研磨したときの同一リメイニングステップ（Remainin
g step）/Åにおいてオキサイド・リムーバル（Oxide R
emoval）の値が従来例と比較して改善されたことを示す
図。FIG. 13 shows the same re-maining step (Remainin) when polishing the oxide film shown in FIG. 10 using the polishing cloth of the present invention.
g step) / Oxide removal at Å
The figure which shows that the value of (emoval) improved compared with the conventional example.
１０…研磨布 １１…母材 １２…水溶性フィラー（微粒子） ３１…コーティング層 １…ＳｉＯ２ 基板 ２…配線溝 ３…金属配線Ａｌ ４…金属配線Ｃｕ ５…金属配線Ｗ ６…酸化膜10 ... polishing cloth 11 ... matrix 12 ... water-soluble filler (fine particles) 31 ... coating layer 1 ... SiO 2 substrate 2 ... wiring groove 3 ... metal wiring Al 4 ... metal wiring Cu 5 ... metal wiring W 6 ... oxide film
Claims (17)
の表面を機械的に研磨する母材と；前記母材中に分散さ
れ、溶媒に対して可溶である微粒子と；より成ることを
特徴とする研磨布。1. A base material for holding a slurry on a surface and mechanically polishing the surface of a substrate to be processed; and fine particles dispersed in the base material and soluble in a solvent. A polishing cloth characterized by the above.
溶媒に溶けて形成された凹部を有することを特徴とする
請求項１に記載の研磨布。2. The polishing cloth according to claim 1, wherein said base material has a concave portion formed on said surface by dissolving said fine particles in said solvent.
て不溶であるコーティング層が形成されていることを特
徴とする請求項１に記載の研磨布。3. The polishing cloth according to claim 1, wherein the fine particles have a coating layer formed on a surface thereof, which is insoluble in the solvent.
を特徴とする請求項１に記載の研磨布。4. The polishing cloth according to claim 1, wherein said base material has no pores therein.
３、薬品（酸化剤）のいずれか一つであることを特徴と
する請求項１に記載の研磨布。5. The method according to claim 1, wherein the slurry is water, SiO 2 , Al 2 O.
3. The polishing cloth according to claim 1, wherein the polishing cloth is any one of a chemical (oxidizing agent).
であることを特徴とする請求項１に記載の研磨布。6. The fine particles have a particle size of 5 to 30 μm.
The polishing cloth according to claim 1, wherein:
前記微粒子が分散され、表面にスラリーを保持し、且つ
被研磨材の表面が機械的に研磨されている際、前記微粒
子が前記溶媒に溶けて前記表面に凹部を形成する母材
と；より成る研磨布。7. A fine particle which is soluble in a solvent; wherein said fine particle is dispersed therein, holds a slurry on the surface, and when the surface of the material to be polished is mechanically polished, A base material that dissolves in the solvent to form a concave portion on the surface.
して不溶であるコーティング層が形成されていることを
特徴とする請求項７に記載の研磨布。8. The polishing cloth according to claim 7, wherein a coating layer insoluble in said solvent is formed on a surface of said fine particles.
を特徴とする請求項７に記載の研磨布。9. A polishing cloth according to claim 7, wherein said base material has no pores therein.
Ｏ３、薬品（酸化剤）のいずれか一つであることを特徴
とする請求項７記載の研磨布。10. The slurry comprises water, SiO 2 , Al 2
O 3, chemical polishing cloth according to claim 7, characterized in that any one of (oxidizing agent).
ｍであることを特徴とする請求項７に記載の研磨布。11. The fine particles have a particle size of 5 to 30 μm.
The polishing cloth according to claim 7, wherein m is m.
膜を通して前記基板に配線溝を設ける工程と；前記基板
及び前記配線溝上に金属配線層を設ける工程と;前記配
線溝中に前記金属配線を埋設する工程と；表面でスラリ
ーを保持し、且つ被研磨材の表面を機械的に研磨する母
材と、前記母材中に分散され、溶媒に対して可溶である
微粒子とより成る研磨布によって、前記配線溝中に埋設
された金属配線の不要部分を研磨し除去し、前記金属配
線の表面を平坦化する工程と；を含むことを特徴とする
研磨布を用いた半導体装置の製造方法 。12. After forming an insulating film on the substrate, providing a wiring groove in the substrate through the insulating film; providing a metal wiring layer on the substrate and the wiring groove; Embedding a metal wiring; and a base material for holding a slurry on the surface and mechanically polishing the surface of the material to be polished, and fine particles dispersed in the base material and soluble in a solvent. Polishing and removing unnecessary portions of the metal wiring buried in the wiring grooves by using the polishing cloth, and flattening the surface of the metal wiring. Manufacturing method.
とを特徴とする請求項１２記載の研磨布を用いた半導体
装置の製造方法。13. The method for manufacturing a semiconductor device using a polishing cloth according to claim 12, wherein said metal wiring is mainly composed of Al.
とを特徴とする請求項１２記載の研磨布を用いた半導体
装置の製造方法。14. The method according to claim 12, wherein a main component of the metal wiring is Cu.
を特徴とする請求項１２記載の研磨布を用いた半導体装
置の製造方法。15. The method according to claim 12, wherein a main component of said metal wiring is W.
酸化膜を設け、前記溝内に前記酸化膜を埋設する工程
と；表面でスラリーを保持し、且つ被研磨材の表面を機
械的に研磨する母材と、前記母材中に分散され、溶媒に
対して可溶である微粒子とより成る研磨布によって、前
記配線溝中に埋設された酸化膜の不要部分を研磨し除去
し、前記酸化膜の表面を平坦化する工程と；を含むこと
を特徴とする研磨布を用いた半導体装置の製造方法 。16. A step of providing a groove in a substrate; a step of providing an oxide film on the substrate and embedding the oxide film in the groove; holding a slurry on the surface and mechanically polishing the surface of the material to be polished. An unnecessary portion of the oxide film embedded in the wiring groove is polished and removed by a polishing cloth comprising a base material to be polished and fine particles dispersed in the base material and soluble in a solvent. Flattening the surface of the oxide film. A method of manufacturing a semiconductor device using a polishing cloth, the method comprising:
徴とする請求項１６記載の研磨布を用いた半導体装置の
製造方法。17. The method for manufacturing a semiconductor device using a polishing cloth according to claim 16, wherein said oxide film is SiO 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11811399A JP3668046B2 (en) | 1998-05-11 | 1999-04-26 | Polishing cloth and method for manufacturing semiconductor device using the polishing cloth |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12744198 | 1998-05-11 | ||
| JP10-127441 | 1998-05-11 | ||
| JP11811399A JP3668046B2 (en) | 1998-05-11 | 1999-04-26 | Polishing cloth and method for manufacturing semiconductor device using the polishing cloth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000033552A true JP2000033552A (en) | 2000-02-02 |
| JP3668046B2 JP3668046B2 (en) | 2005-07-06 |
Family
ID=26456105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11811399A Expired - Fee Related JP3668046B2 (en) | 1998-05-11 | 1999-04-26 | Polishing cloth and method for manufacturing semiconductor device using the polishing cloth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3668046B2 (en) |
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