JPH11335829A - Formation of thin film, and thin film - Google Patents
Formation of thin film, and thin filmInfo
- Publication number
- JPH11335829A JPH11335829A JP10142794A JP14279498A JPH11335829A JP H11335829 A JPH11335829 A JP H11335829A JP 10142794 A JP10142794 A JP 10142794A JP 14279498 A JP14279498 A JP 14279498A JP H11335829 A JPH11335829 A JP H11335829A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- substrate
- target
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、主に光学素子の表
面にコーティングされる光学薄膜、及びその作成方法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical thin film mainly coated on the surface of an optical element, and a method for producing the same.
【０００２】[0002]
【従来の技術】従来、光学薄膜をスパッタスパッタ法で
製作する際には、光学特性の経時安定性のために、基板
の膜を付ける面を、ターゲットのスパッタ面から法線を
引いた領域に入れていた。2. Description of the Related Art Conventionally, when an optical thin film is manufactured by a sputter sputtering method, a surface on which a substrate film is to be formed is placed in a region where a normal line is drawn from a sputtering surface of a target in order to stabilize optical characteristics with time. I was putting in.
【０００３】従来、光学特性の経時安定性を持つ光学薄
膜を形成する際、基板の薄膜を付ける面が蒸発源面から
法線を引いた領域に入らない部分を持つ場合は、本来の
スパッタ法とは別に、イオン銃にて加速粒子を生成させ
基板を叩いていたり、特開平０６−０４９６３７に見ら
れるように基板に荷電粒子を入射させていた。Conventionally, when forming an optical thin film having optical characteristic stability with time, if the surface of the substrate on which the thin film is applied has a portion which does not fall within a region drawn normal to the evaporation source surface, the original sputtering method is used. Separately, an ion gun is used to generate accelerated particles and strike the substrate, or charged particles are incident on the substrate as seen in JP-A-06-49637.
【０００４】従来、酸化物の光学薄膜を、スパッタ法で
製作する際に導入するガスの真空容器内の分圧は、酸素
またはアルゴンを導入する製法であった。しかし、この
製法を用いた場合、基板のターゲットのスパッタ面から
法線を引いた領域に入らない部分に成膜された膜は、光
学特性の経時変化があった。Heretofore, the partial pressure of the gas introduced into the optical thin film made of oxide by the sputtering method in the vacuum vessel has been a method of introducing oxygen or argon. However, when this manufacturing method is used, the optical characteristics of the film formed on a portion of the substrate that does not fall within a region drawn by a normal line from the sputtering surface of the target have changed with time.
【０００５】[0005]
【発明が解決しようとする課題】光学薄膜は、光学特性
の経時安定性が要求されるが、大気中に放置すると、大
気中の水分が経時的に膜中に取り込まれる、又は環境に
よっては膜中の水分が抜けていくことにより、屈折率が
変化し、光学特性が変わってしまう欠点があった。The optical thin film is required to have stability with time in optical characteristics. However, when left in the air, moisture in the air is taken into the film over time or, depending on the environment, the film may be thin. There is a defect that the refractive index changes and the optical characteristics change due to the removal of the water inside.
【０００６】それを補うための成膜方法として、従来、
光学薄膜をスパッタ法で製作する際には、光学特性の経
時安定性のために、基板の膜を付ける面を、ターゲット
のスパッタ面から法線を引いた領域に入れていた。しか
し、この方法では、膜を付ける面積の大きい基板や、大
量生産には不向きであった。また、別の方法で、従来、
光学特性の経時安定性を持つ光学薄膜を形成する際、基
板の薄膜を付ける面が蒸発源面から法線を引いた領域に
入らない部分を持つ場合は、イオン銃にて加速粒子を生
成させ基板を叩いていた。しかし、この方法では、イオ
ン銃とそのコントロールユニットなど、装置が複雑且
つ、高価なものになってしまっていた。Conventionally, as a film forming method for compensating for this,
When an optical thin film is manufactured by a sputtering method, the surface of a substrate on which a film is to be formed is placed in a region where a normal line is drawn from a sputtering surface of a target in order to stabilize optical characteristics over time. However, this method is not suitable for a substrate having a large area on which a film is to be formed or for mass production. Also, in another way,
When forming an optical thin film with stable optical characteristics over time, if the surface of the substrate on which the thin film is applied has a portion that does not fall within the area drawn by the normal from the evaporation source surface, accelerated particles are generated with an ion gun. I was hitting the board. However, in this method, devices such as an ion gun and its control unit are complicated and expensive.
【０００７】そこで本発明の目的は、スパッタ法にて経
時変化のない光学薄膜を提供することにある。Accordingly, an object of the present invention is to provide an optical thin film which does not change with time by a sputtering method.
【０００８】[0008]
【課題を解決するための手段】前記の目的は以下の手段
によって達成される。The above object is achieved by the following means.
【０００９】すなわち、本発明は、光学薄膜を形成する
スパッタ装置において、基板の薄膜を付ける面が、ター
ゲットのスパッタ面から法線を引いた領域に入らない部
分を持つことができる成膜装置において、成膜時に真空
容器内に導入するガスが少なくとも酸素とヘリウムの両
方を含むガスである薄膜作成法を提案するものであり、
真空容器内に導入するヘリウムの分圧が酸素の２．５倍
以上であることを含む。That is, the present invention relates to a sputtering apparatus for forming an optical thin film, wherein the surface of the substrate on which the thin film is applied can have a portion which does not enter a region drawn by a normal from the sputtering surface of the target. The present invention proposes a thin film forming method in which a gas introduced into a vacuum vessel during film formation is a gas containing at least both oxygen and helium,
This includes that the partial pressure of helium introduced into the vacuum vessel is at least 2.5 times that of oxygen.
【００１０】また本発明は前記の方法によって作成した
ことを特徴とする薄膜を提案するものであり、前記薄膜
は吸湿による経時変化がないこと、前記薄膜は特に主成
分が酸化物であること、前記薄膜は特にＳｉＯ2 が主成
分であること、前記薄膜は特に、Ａｌ2 Ｏ3 が主成分で
あること、前記薄膜は特に、Ｔａ2 Ｏ5 が主成分である
ことを含む。The present invention also proposes a thin film produced by the above method, wherein the thin film does not change with time due to moisture absorption, and the thin film is mainly composed of an oxide. The thin film mainly includes SiO 2 as a main component, the thin film particularly includes Al 2 O 3 as a main component, and the thin film particularly includes Ta 2 O 5 as a main component.
【００１１】基板の薄膜を付ける面が、ターゲットのス
パッタ面から法線を引いた領域に入らない部分を持つこ
とができる成膜装置において、まず、従来のＯ2 とＡｒ
を導入した成膜方法により、ＢＫ７基板上に成膜された
ＳｉＯ2 単層膜において、この膜表面を電子顕微鏡で撮
影した膜は、緻密さに欠ける膜であり、水分が浸透しや
すくなっている事が分かった。また、この膜の成膜直後
の真空漕からの反射光学特性の経時変化を図１に示す。In a film forming apparatus in which a surface of a substrate on which a thin film is applied can have a portion that does not enter a region drawn by a normal line from a sputtering surface of a target, a conventional O 2 and Ar
In the SiO 2 single-layer film formed on the BK7 substrate by the film forming method, the film obtained by photographing the surface of the film with an electron microscope is a film lacking in density, and the moisture easily penetrates. I knew it was there. FIG. 1 shows the change over time of the reflection optical characteristics from the vacuum chamber immediately after the formation of this film.
【００１２】次に本発明のＯ2 とＨｅを導入する成膜方
法により、ＢＫ７基板上に成膜されたＳｉＯ2 単層膜に
おいて、この膜表面を電子顕微鏡で撮影した膜は、緻密
で、表面が滑らかである事が分かった。また、この膜の
成膜直後の真空漕からの反射光学特性の経時変化を図２
に示す。Next, in the SiO 2 single-layer film formed on the BK7 substrate by the film-forming method of introducing O 2 and He of the present invention, the film surface of this film taken by an electron microscope is dense, It turned out that the surface was smooth. FIG. 2 shows the change over time of the reflection optical characteristics from the vacuum chamber immediately after the formation of this film.
Shown in
【００１３】以上の結果から本発明は、Ｈｅを導入する
ことにより、ターゲットのスパッタ面から法線を引いた
領域に入らない部分で付けた膜を、緻密で表面も滑らか
にし、経時変化しない膜をつくる作用がある。[0013] From the above results, the present invention makes it possible to introduce He into a film that is formed in a portion that does not enter a region drawn from the sputter surface of the target by a normal line, and that has a dense and smooth surface and does not change with time. Has the effect of producing
【００１４】[0014]
【発明の実施の形態】以下、本発明を実施例により具体
的に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described specifically with reference to examples.
【００１５】[0015]
【実施例】（実施例１）図３に光学薄膜を形成するスパ
ッタ装置において、基板の薄膜を付ける面が、ターゲッ
トのスパッタ面から法線を引いた領域に入らない部分を
持つことができる成膜装置の例を示す。(Embodiment 1) In the sputtering apparatus for forming an optical thin film shown in FIG. 3, the surface of the substrate on which the thin film is to be formed can have a portion which does not fall within a region drawn normal to the sputtering surface of the target. An example of a membrane device is shown.
【００１６】ターゲットより大きい基板に成膜する例で
ある。This is an example in which a film is formed on a substrate larger than a target.
【００１７】次に本実施例の光学薄膜およびその成膜方
法を説明する。まず、１×１０-4Ｐａ以下まで真空槽内
を排気する。その後、Ｏ2 ガス及びＨｅをガス導入口か
ら導入する。電源からの電力をターゲットに供給し、プ
ラズマを発生させる。このプラズマにより、ターゲット
成分がスパッタされ基板上に膜を形成する。Next, an optical thin film of this embodiment and a method of forming the same will be described. First, the inside of the vacuum chamber is evacuated to 1 × 10 −4 Pa or less. Thereafter, O 2 gas and He are introduced from the gas inlet. The power from the power supply is supplied to the target to generate plasma. The target component is sputtered by this plasma to form a film on the substrate.
【００１８】（実施例２）図４に光学薄膜を形成するス
パッタ装置において、基板の薄膜を付ける面が、ターゲ
ットのスパッタ面から法線を引いた領域に入らない部分
を持つことができる成膜装置の例を示す。(Embodiment 2) In the sputtering apparatus for forming an optical thin film shown in FIG. 4, the surface of the substrate on which the thin film is to be formed can have a portion that does not fall within a region drawn by a normal line from the sputtering surface of the target. An example of the device is shown.
【００１９】基板上に付く膜厚のむらをとるために、基
板をターゲットと並行には置いていない。The substrate is not placed in parallel with the target in order to make the film thickness uneven on the substrate.
【００２０】次に本実施例の光学薄膜およびその成膜方
法を説明する。まず、１×１０-4Ｐａ以下まで真空槽内
を排気する。その後、Ｏ2 をガス及びＨｅをガス導入口
導入する。電源からの電力をターゲットに供給し、プラ
ズマを発生させる。このプラズマにより、ターゲット成
分がスパッタされ基板上に膜を形成する。Next, an optical thin film of the present embodiment and a method of forming the optical thin film will be described. First, the inside of the vacuum chamber is evacuated to 1 × 10 −4 Pa or less. Thereafter, O 2 is introduced into the gas and He is introduced into the gas inlet. The power from the power supply is supplied to the target to generate plasma. The target component is sputtered by this plasma to form a film on the substrate.
【００２１】（実施例３）図５に光学薄膜を形成するス
パッタ装置において、基板の薄膜を付ける面が、ターゲ
ットのスパッタ面から法線を引いた領域に入らない部分
を持つことができる成膜装置の例を示す。(Embodiment 3) In the sputtering apparatus for forming an optical thin film shown in FIG. 5, the surface of the substrate on which the thin film is to be formed can have a portion that does not fall within a region drawn by a normal line from the sputtering surface of the target. An example of the device is shown.
【００２２】基板上に付く膜厚のむらをとるために、基
板をターゲットと並行には置いていない。また、大量に
成膜するため複数の基板を配置している。The substrate is not placed in parallel with the target in order to make the film thickness uneven on the substrate. Further, a plurality of substrates are arranged to form a large amount of films.
【００２３】次に本実施例の光学薄膜およびその成膜方
法を説明する。まず、１×１０-4Ｐａ以下まで真空槽内
を排気する。その後、Ｏ2 ガス及びＨｅをガス導入口か
ら導入する。電源からの電力をターゲットに供給し、プ
ラズマを発生させる。このプラズマにより、ターゲット
成分がスパッタされ基板上に膜を形成する。Next, the optical thin film of this embodiment and the method for forming the same will be described. First, the inside of the vacuum chamber is evacuated to 1 × 10 −4 Pa or less. Thereafter, O 2 gas and He are introduced from the gas inlet. The power from the power supply is supplied to the target to generate plasma. The target component is sputtered by this plasma to form a film on the substrate.
【００２４】（実施例４）図６に光学薄膜を形成するス
パッタ装置において、基板の薄膜を付ける面が、ターゲ
ットのスパッタ面から法線を引いた領域に入らない部分
を持つことができる成膜装置の例を示す。(Embodiment 4) In the sputtering apparatus for forming an optical thin film shown in FIG. 6, the surface of the substrate on which the thin film is to be formed can have a portion which does not fall within a region drawn by a normal line from the sputtering surface of the target. An example of the device is shown.
【００２５】ターゲットにはＳｉＯ2 を用い、電源には
ＲＦを用いた。基板にはＢＫ７の硝子を用いた。また、
基板上に付く膜厚のむらをとるために、基板をターゲッ
トと並行には置いていない。SiO 2 was used as a target, and RF was used as a power source. BK7 glass was used for the substrate. Also,
The substrate was not placed in parallel with the target to make the film thickness uneven on the substrate.
【００２６】次に本実施例の光学薄膜およびその成膜方
法を説明する。まず、１×１０-4Ｐａ以下まで真空槽内
を排気する。その後、Ｏ2 ガス及をガス導入口から５×
１０ -2Ｐａ程度導入する。また、同時にＨｅガスを導入
口７から５×１０-1Ｐａ程度導入する。電源からの電力
をターゲットに供給し、プラズマを発生させる。このプ
ラズマにより、ターゲット成分であるＳｉＯ2 がスパッ
タされ基板上に膜を形成する。この方法にて成膜された
ＳｉＯ2 を単層膜において、成膜直後の真空漕からの反
射光学特性の経時変化を図７に示す。図７より経時変化
のない膜ができたことがわかる。Next, the optical thin film of this embodiment and the method of forming the same
Explain the law. First, 1 × 10-FourIn vacuum chamber to below Pa
Exhaust. Then OTwo 5 × gas from gas inlet
10 -2About Pa is introduced. He gas is introduced at the same time.
Mouth 7 to 5 × 10-1About Pa is introduced. Power from power supply
Is supplied to the target to generate plasma. This
Due to plasma, target component SiOTwo Is
To form a film on the substrate. Film was formed by this method
SiOTwo In a single-layer film,
FIG. 7 shows changes over time in the projection optical characteristics. Change with time from Fig. 7
It can be seen that a film having no defects was formed.
【００２７】（実施例５）図８に光学薄膜を形成するス
パッタ装置において、基板の薄膜を付ける面が、ターゲ
ットのスパッタ面から法線を引いた領域に入らない部分
を持つことができる成膜装置の例を示す。(Embodiment 5) In the sputtering apparatus for forming an optical thin film shown in FIG. 8, the surface of the substrate on which the thin film is to be formed can have a portion which does not fall in a region drawn by a normal line from the sputtering surface of the target. An example of the device is shown.
【００２８】ターゲットにはＡｌを用い、電源にはＲＦ
を用いた。基板にはＢＫ７の硝子を用いた。また、基板
上に付く膜厚のむらをとるために、基板をターゲットと
並行には置いていない。Al is used for the target, and RF is used for the power source.
Was used. BK7 glass was used for the substrate. Further, the substrate is not placed in parallel with the target in order to make the film thickness uneven on the substrate.
【００２９】次に本実施例の光学薄膜およびその成膜方
法を説明する。まず、１×１０-4Ｐａ以下まで真空槽内
を排気する。その後、Ｏ2 ガス及をガス導入口から１×
１０ -1Ｐａ程度導入する。また、同時にＨｅガスを導入
口７から３×１０-1Ｐａ程度導入する。電源からの電力
をターゲットに供給し、プラズマを発生させる。このプ
ラズマにより、ターゲット成分であるＡｌがスパッタさ
れ酸素と反応し、基板上にＡｌ2 Ｏ3 膜を形成する。こ
の方法にて成膜されたＡｌ2 Ｏ3 単層膜において、成膜
直後の真空漕からの反射光学特性の経時変化を図９に示
す。図９より経時変化のない膜ができたことがわかる。Next, the optical thin film of this embodiment and the method of forming the same
Explain the law. First, 1 × 10-FourIn vacuum chamber to below Pa
Exhaust. Then OTwo 1x gas from gas inlet
10 -1About Pa is introduced. He gas is introduced at the same time.
3 × 10 from mouth 7-1About Pa is introduced. Power from power supply
Is supplied to the target to generate plasma. This
The target component Al was sputtered due to plasma.
Reacts with oxygen to form Al on the substrate.Two OThree Form a film. This
Al deposited by the method ofTwo OThree Film formation in single layer film
Fig. 9 shows the change over time in the reflection optical characteristics from the vacuum tank immediately after.
You. FIG. 9 shows that a film having no change with time was formed.
【００３０】[0030]
【発明の効果】本発明の薄膜作成装置及び薄膜作成方法
及び薄膜により以下の効果が得られた。 （１）ターゲットのスパッタ面に比べて大きな膜を付け
る面積を持つ基板に、経時変化がない膜を成膜できた。 （２）ターゲットのスパッタ面から法線を引いた領域か
らはみ出るほどの大量の基板に、経時変化がない膜を成
膜できた。 （３）基板と膜との密着性が良好である。 （４）膜厚制御性に優れるため、設計どおりの光学特性
が得られる。 （５）低温で成膜ができた。The following effects are obtained by the thin film forming apparatus, the thin film forming method and the thin film of the present invention. (1) A film having no change with time could be formed on a substrate having an area where a film larger than the sputtering surface of the target was applied. (2) A film having no change over time could be formed on a large amount of substrate that protruded from a region where the normal line was drawn from the sputtering surface of the target. (3) Good adhesion between the substrate and the film. (4) Because of excellent film thickness controllability, optical characteristics as designed can be obtained. (5) A film was formed at a low temperature.
【図１】基板の薄膜を付ける面が、ターゲットのスパッ
タ面から法線を引いた領域に入らない部分を持つことが
できる成膜装置において、従来のＯ2 とＡｒを導入した
成膜方法により、ＢＫ７基板上に成膜されたＳｉＯ2 単
層膜の反射光学特性の経時変化を示すグラフである。FIG. 1 shows a conventional film forming method in which O 2 and Ar are introduced in a film forming apparatus in which a surface of a substrate on which a thin film is applied can have a portion that does not enter a region drawn by a normal line from a sputtering surface of a target. 4 is a graph showing the change over time of the reflection optical characteristics of a SiO 2 single layer film formed on a BK7 substrate.
【図２】基板の薄膜を付ける面が、ターゲットのスパッ
タ面から法線を引いた領域に入らない部分を持つことが
できる成膜装置において、本発明のＯ2 とＨｅを導入す
る成膜方法により、ＢＫ７基板上に成膜されたＳｉＯ2
単層膜の反射光学特性の経時変化を示すグラフである。FIG. 2 is a film forming method of introducing O 2 and He according to the present invention in a film forming apparatus in which a surface of a substrate on which a thin film is applied can have a portion that does not enter a region drawn by a normal line from a sputtering surface of a target. SiO 2 deposited on BK7 substrate
5 is a graph showing the change over time of the reflection optical characteristics of a single-layer film.
【図３】実施例１記載の光学薄膜を形成するスパッタ装
置の例を示す。FIG. 3 shows an example of a sputtering apparatus for forming an optical thin film described in Example 1.
【図４】実施例２記載の光学薄膜を形成するスパッタ装
置の例を示す。FIG. 4 shows an example of a sputtering apparatus for forming an optical thin film described in Embodiment 2.
【図５】実施例３記載の光学薄膜を形成するスパッタ装
置の例を示す。FIG. 5 shows an example of a sputtering apparatus for forming an optical thin film described in Embodiment 3.
【図６】実施例４記載の光学薄膜を形成するスパッタ装
置の例を示す。FIG. 6 shows an example of a sputtering apparatus for forming an optical thin film described in Embodiment 4.
【図７】実施例４記載のＳｉＯ2 単層膜の反射光学特性
の経時変化を示すグラフである。FIG. 7 is a graph showing the change over time in the reflection optical characteristics of the SiO 2 single-layer film described in Example 4.
【図８】実施例５記載の光学薄膜を形成するスパッタ装
置の例を示す。FIG. 8 shows an example of a sputtering apparatus for forming an optical thin film described in Example 5.
【図９】実施例５記載のＳｉＯ2 単層膜の反射光学特性
の経時変化を示すグラフである。FIG. 9 is a graph showing the change over time in the reflection optical characteristics of the SiO 2 single-layer film described in Example 5.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 康之 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 枇榔 竜二 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yasuyuki Suzuki 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Ryuji Bilo 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inside the corporation
Claims (8)
板の薄膜を付ける面が、ターゲットのスパッタ面か法線
を引いた領域に入らない部分を持つことができる成膜装
置において、成膜時に真空容器内に導入するガスが少な
くとも酸素とヘリウムの両方を含むガスであることを特
徴とする薄膜作成法。1. A sputtering apparatus for forming an optical thin film, wherein the surface of the substrate on which the thin film is applied can have a portion that does not enter the sputtered surface of the target or a region drawn by a normal line. A thin film forming method, wherein the gas introduced into the vacuum vessel is a gas containing at least both oxygen and helium.
導入するヘリウムの分圧が酸素の２．５倍以上である請
求項１に記載の薄膜作成法。2. The method according to claim 1, wherein the partial pressure of helium introduced into the vacuum vessel is at least 2.5 times that of oxygen.
たことを特徴とする薄膜。3. A thin film produced by the method according to claim 1.
求項３に記載の薄膜。4. The thin film according to claim 3, wherein the thin film does not change with time due to moisture absorption.
記載の薄膜。5. The thin film according to claim 3, wherein the main component is an oxide.
る請求項３に記載の薄膜。6. The thin film according to claim 3, wherein the thin film is mainly composed of SiO 2 .
あるとする請求項３に記載の薄膜。7. The thin film according to claim 3 , wherein the thin film is mainly composed of Al 2 O 3 .
ある請求項３に記載の薄膜。8. The thin film according to claim 3, wherein the thin film is mainly composed of Ta 2 O 5 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10142794A JPH11335829A (en) | 1998-05-25 | 1998-05-25 | Formation of thin film, and thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10142794A JPH11335829A (en) | 1998-05-25 | 1998-05-25 | Formation of thin film, and thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11335829A true JPH11335829A (en) | 1999-12-07 |
Family
ID=15323778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10142794A Pending JPH11335829A (en) | 1998-05-25 | 1998-05-25 | Formation of thin film, and thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11335829A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006067583A1 (en) * | 2004-12-22 | 2006-06-29 | Alcantara S.P.A. | A procedure to make leather-like sheet |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5550462A (en) * | 1978-10-07 | 1980-04-12 | Toko Inc | Preparation of zinc oxide thin film |
| JPH06272037A (en) * | 1991-06-21 | 1994-09-27 | Tonen Corp | Formation of thin film and apparatus therefor |
| JPH0770749A (en) * | 1993-09-03 | 1995-03-14 | Canon Inc | Formation of thin film and device therefor |
| JPH0925571A (en) * | 1995-07-06 | 1997-01-28 | Canon Inc | Film formation of oxide thin film |
-
1998
- 1998-05-25 JP JP10142794A patent/JPH11335829A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5550462A (en) * | 1978-10-07 | 1980-04-12 | Toko Inc | Preparation of zinc oxide thin film |
| JPH06272037A (en) * | 1991-06-21 | 1994-09-27 | Tonen Corp | Formation of thin film and apparatus therefor |
| JPH0770749A (en) * | 1993-09-03 | 1995-03-14 | Canon Inc | Formation of thin film and device therefor |
| JPH0925571A (en) * | 1995-07-06 | 1997-01-28 | Canon Inc | Film formation of oxide thin film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006067583A1 (en) * | 2004-12-22 | 2006-06-29 | Alcantara S.P.A. | A procedure to make leather-like sheet |
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