JPS59134821A - Method and device for manufacturing thin film - Google Patents
Method and device for manufacturing thin filmInfo
- Publication number
- JPS59134821A JPS59134821A JP723583A JP723583A JPS59134821A JP S59134821 A JPS59134821 A JP S59134821A JP 723583 A JP723583 A JP 723583A JP 723583 A JP723583 A JP 723583A JP S59134821 A JPS59134821 A JP S59134821A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- thin film
- vapor deposition
- melting point
- high melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は薄膜の製造方法疎び製造装置に関し、特に内部
応力をコントロールした薄膜や高融点物質を所要量含有
可能な薄膜の製造方法及び製造装置に関するものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method and apparatus for manufacturing a thin film, and more particularly to a method and apparatus for manufacturing a thin film with controlled internal stress and a thin film that can contain a required amount of a high melting point substance.
一般に半導体装置の製造等において基板上に薄膜を形成
する場合、従来からＣＶＤ法、蒸着法或いはスパッタ法
が用いられており、これらの各方法の中からその都度最
適なものを選んで薄膜を形成している。ところで、この
ようにして形成した薄膜には内部応力が存在することが
明らかにされている。この内部応力は薄膜の形成法、形
成条件。Generally, when forming a thin film on a substrate in the manufacture of semiconductor devices, etc., CVD, vapor deposition, or sputtering methods have traditionally been used, and the most suitable method is selected from each of these methods to form a thin film. are doing. By the way, it has been revealed that internal stress exists in the thin film formed in this manner. This internal stress depends on the thin film formation method and formation conditions.
材料によって異なり、例えば蒸着法によって形成された
薄膜は引張応力を有し、スパッタ法によるものは圧縮応
力を有すると一般に言われている。It is generally said that thin films formed by vapor deposition have tensile stress and those formed by sputtering have compressive stress, depending on the material.
このため、半導体装置を形成する薄膜にも内部応力が存
在することは否定できず、この内部応力によっ又素子特
性へ悪影響を及ぼし、或いは薄剥れが生じることがある
。特に近年の半導体装置は高集積化、高速化に伴なって
膜厚が増々薄くなる傾向にあり、前述した不具合が更に
顕著になることから内部応力の低減は一層重要なものと
なっている。しかしながら、前述した各膜形成方法では
この内部応力の問題を解決できないのが実情であり、今
後の線順となっている。Therefore, it cannot be denied that internal stress exists in the thin film forming the semiconductor device, and this internal stress may also have an adverse effect on device characteristics or may cause peeling. Particularly in recent years, the film thickness of semiconductor devices tends to become thinner and thinner as they become more highly integrated and operate at higher speeds, and the above-mentioned problems become more pronounced, making it even more important to reduce internal stress. However, the reality is that the above-mentioned film forming methods cannot solve the problem of internal stress, and this is the way forward.
したかつ（本発明の目的は薄膜の内部応力を所望に応じ
て低減する等のコントロールを行なうことができ、また
必要に応じて扁融点物質を含有させることのできる薄膜
製造方法及び製造装置を提供することにある。(An object of the present invention is to provide a thin film manufacturing method and manufacturing apparatus that can control the internal stress of a thin film such as reducing it as desired, and can also contain a low melting point substance as necessary. It's about doing.
この目的を達成するために本発明方法は蒸着法とスパッ
タ法の２つを同時に用いて薄膜を形成するようにしたも
のである。In order to achieve this object, the method of the present invention uses both vapor deposition and sputtering methods simultaneously to form a thin film.
また本発明装置は１つのチャンバ内に蒸着装置とスパッ
タ装置を一体的に組込んでこれらを同時に作動させ得る
ようにしたものである。Furthermore, the apparatus of the present invention incorporates a vapor deposition apparatus and a sputtering apparatus into one chamber so that they can be operated simultaneously.
以下、本発明を図面に基づいて説明する。Hereinafter, the present invention will be explained based on the drawings.
本発明者の検討によれば１．薄膜か内部応力を有する原
因として種々のものが考えられるが、そのひとつに薄膜
の密度に関係するものがある。例えば、Ｎｉの蒸着薄膜
は数百度で加熱焼鈍しをすることにより内部応力が増大
する。これは加熱焼鈍により格子欠陥等が消滅して体積
が減少するためである。したがって、このことから薄膜
の密度を変化させることにより内部応力を変化すること
が考えられ、例えば膜形成時に膜の密度を高くすれば圧
縮応力が、逆に密度を低くすれば引張応力が夫々得られ
ることになる。本発明はこの点に注目して膜形成時に薄
膜の密度を変化させるようにしたもので、具体的には蒸
着法とスパッタ法を同時作動させるものである。According to the inventor's study, 1. There are various possible reasons why a thin film has internal stress, one of which is related to the density of the thin film. For example, internal stress increases when a deposited Ni film is annealed at several hundred degrees. This is because heat annealing eliminates lattice defects and reduces the volume. Therefore, it is possible to change the internal stress by changing the density of the thin film.For example, if the density of the film is increased during film formation, the compressive stress will be increased, and if the density is decreased, the tensile stress will be increased. It will be done. The present invention focuses on this point and changes the density of the thin film during film formation. Specifically, the vapor deposition method and the sputtering method are operated simultaneously.
以下、本発明の一実施例を図面に基づいて説明する。Hereinafter, one embodiment of the present invention will be described based on the drawings.
図は薄膜製造装置の一実施例を示し、一つのチャンバと
して構成された膜形成槽１内に蒸着装置２とスパッタ装
置３を内装している。蒸着装置２は電子ビーム蒸着を行
なう電子銃４と、蒸着源５とを備え、電子銃４から放出
された電子により蒸着源５の材料を基板支持６上に載置
した基板７上に堆積して膜を形成する。スパッタ装置３
はイオンビームスパッタ部８と、スパッタ源９とを有し
、イオンビームスパッタ部８から加速されて放出された
イオンをスパッタ源９に衝突させ、そのとき出るスバ、
７タ粒子を一前記基板７に堆積させる。前記イオンビー
ムスパッタ部８は、ガス導入口１０を有するイオン源１
１と、これに連なる加速部１２とからなり、ガス導入口
１０かも導入した例えばＡｒ等の希ガスをイオン源１１
においてイオン化し、このイオンを加速部１２において
加速して放出させることができる。なお、前記膜形成槽
１内の排気は排気口１３を通して、例えば拡散ポンプ。The figure shows an embodiment of a thin film manufacturing apparatus, in which a vapor deposition apparatus 2 and a sputtering apparatus 3 are installed in a film forming tank 1 configured as one chamber. The evaporation apparatus 2 includes an electron gun 4 for performing electron beam evaporation and a evaporation source 5, and uses electrons emitted from the electron gun 4 to deposit material from the evaporation source 5 onto a substrate 7 placed on a substrate support 6. to form a film. Sputtering device 3
has an ion beam sputtering section 8 and a sputtering source 9, and causes ions accelerated and emitted from the ion beam sputtering section 8 to collide with the sputtering source 9, and the soot produced at that time,
7 particles are deposited on the substrate 7. The ion beam sputtering section 8 includes an ion source 1 having a gas inlet 10.
1 and an accelerating section 12 connected to the ion source 11.
The ions can be ionized in the acceleration section 12 and then accelerated and released. The interior of the film forming tank 1 is exhausted through an exhaust port 13, for example, by a diffusion pump.
ロータリポンプ等で排出する。Discharge using a rotary pump, etc.
したがって以上の構成によれば、膜形成槽１内の真空度
を１０ ’Ｔｏｒｒ以下に設定した上で蒸着装置２とス
パッタ装置３を作動させて膜形成を行なえばよい。この
場合、蒸着装置２は真空度の条件を満足しているが、ス
パッタ装置３は通常１０−１〜１０ Ｔｏｒｒの真空
度が条件であるため両装置を同時に作動する場合に問題
が生じるように思われる。しかしながら、本例のスパッ
タ装置３ではイオンビームスパッタ部８内で加速された
イオンを生成する構成としているため、真空度条件を１
０−’Ｔｏｒｒにまで下げることが可能となり、蒸着装
置２と同一槽内で作動させることができるのである。Therefore, according to the above configuration, film formation can be performed by setting the degree of vacuum in the film forming tank 1 to 10' Torr or less and then operating the vapor deposition device 2 and the sputtering device 3. In this case, the vapor deposition device 2 satisfies the vacuum condition, but the sputtering device 3 usually requires a vacuum degree of 10-1 to 10 Torr, so problems may occur if both devices are operated at the same time. Seem. However, since the sputtering apparatus 3 of this example is configured to generate accelerated ions within the ion beam sputtering section 8, the degree of vacuum condition is set to 1.
It becomes possible to lower the pressure to 0-' Torr, and it can be operated in the same tank as the vapor deposition apparatus 2.
このようにして蒸着装置２とスパッタ装置３とを同時作
動させて基板７上に膜を形成することにより、形成され
る薄膜は蒸着による堆積とスパッタによる堆積とで構成
されることになる。そして、各堆積による密度が異なる
ために、これらの堆積比を変えることにより所望の密度
（平均密度）を得ることができ、したがって薄膜の内部
応力を任意にコントロールすることができるのである。By forming a film on the substrate 7 by operating the evaporation device 2 and the sputtering device 3 simultaneously in this way, the formed thin film is composed of deposition by evaporation and deposition by sputtering. Since the density due to each deposition is different, a desired density (average density) can be obtained by changing the deposition ratio, and therefore the internal stress of the thin film can be arbitrarily controlled.
なお、前記構成におけるスパッタ装置３は、スパッタに
特有なプラズマが膜形成槽１内に発生することがないた
めプラズマによる膜への影響も防ぐことができる。In addition, in the sputtering apparatus 3 having the above configuration, plasma peculiar to sputtering is not generated in the film forming bath 1, so that the influence of the plasma on the film can also be prevented.
ここで、前記蒸着源５とスパッタ源９とは同一のターゲ
ットとして構成してもよい。一方、蒸着装置２やスパッ
タ装置３は夫々複数個づつ設けるようにしてもよい。Here, the vapor deposition source 5 and the sputtering source 9 may be configured as the same target. On the other hand, a plurality of vapor deposition devices 2 and a plurality of sputtering devices 3 may be provided.
更に、スパッタ法は蒸着法等に比較して容易に高融点物
質及びその化合物の薄膜形成ができるので、スパッタ源
９に高融点物質をセントしてスパッタと蒸着を同時に行
なうことにより、基板７上に高融点物質を含む薄膜の形
成を行なうことができる。高融点物質の含有社はスパッ
タガスの流量或いはガスイオンの加速電圧を変えてスパ
ッタ比を変えることにより容易に行なうことができる。Furthermore, since the sputtering method can form a thin film of high melting point substances and their compounds more easily than vapor deposition methods etc., by placing the high melting point substance in the sputtering source 9 and performing sputtering and vapor deposition simultaneously, A thin film containing a high melting point substance can be formed. Inclusion of a high melting point substance can be easily achieved by changing the sputtering ratio by changing the flow rate of the sputtering gas or the accelerating voltage of gas ions.
以上のように本発明の薄膜製造方法によれば、蒸着法と
スパッタ法の２つを同時に用いて薄膜を形成しているの
で、薄膜の密度を所望の値にして薄膜の内部応力を任意
にコントロールすることができ、かつ必要に応じて高融
点物質を含有した薄膜を形成することができる。As described above, according to the thin film manufacturing method of the present invention, since the thin film is formed using both the vapor deposition method and the sputtering method at the same time, the internal stress of the thin film can be adjusted to a desired value by adjusting the density of the thin film to a desired value. This can be controlled and, if necessary, a thin film containing a high melting point substance can be formed.
また、本発明の薄膜製造装置は１つの槽内に蒸着装置と
スパッタ装置を一体的に組込んでこれらを同時に作動さ
せ得るようにしているので、前記した所望密度の薄膜や
高融点物質を含有した薄膜を極めて容易に形成すること
力１できるのである。Furthermore, since the thin film manufacturing apparatus of the present invention integrates a vapor deposition apparatus and a sputtering apparatus in one tank so that they can be operated simultaneously, the thin film manufacturing apparatus of the present invention can contain a thin film of the desired density and a high melting point substance. Therefore, it is possible to form a thin film extremely easily.
図は本発明の一実施例の全体構成図である。
１・・・膜形成槽、２・・蒸着装置、３・・・スノくツ
タ装置、４・・・電子銃、５・・・蒸着源、７・・・基
板、８・・・イオンビームスノ（ツタ部、９・・・スノ
くツタ源、１１・・イオン源、１２・・・加速部。The figure is an overall configuration diagram of an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Film formation tank, 2... Evaporation device, 3... Snow vine device, 4... Electron gun, 5... Vapor deposition source, 7... Substrate, 8... Ion beam snow (Ivy part, 9...Snow ivy source, 11...Ion source, 12...Acceleration part.
Claims (1)
時に用いて薄膜を形成することを特徴とする薄膜の製造
方法。 ２、蒸着法とスパッタ法の各膜堆積比を変化させて膜密
度をコントロールする特許請求の範囲第１項記載の薄膜
の製造方法。 ３、スパッタ法で高融点物質を用いて膜形成してなる特
許請求の範囲第２項記載の薄膜の製造方法。 ４、薄膜の形成を行なう膜製造装置において、１つの膜
形成用の槽内に蒸着装置とスパッタ装置を一体的に内装
しかつこれらを同時に作動し得るよう構成したことを特
徴とする薄膜の製造装置。 ５、スパッタ装置は希ガスをイオン化するイオン源と、
このイオンを加速して放出する加速部とを有するイオン
ビームスパッタ部を備えてなる特許請求の範囲第４項記
載の薄膜の製造装置。 ６、槽内の真空度を１０−’Ｔｏｒｒ以下に設定してな
る特許請求の範囲第５項記載の薄膜の製造装置。[Claims] 1. A method for manufacturing a thin film, characterized in that the thin film is formed by simultaneously using two methods: vapor deposition and sputtering. 2. The thin film manufacturing method according to claim 1, wherein the film density is controlled by changing the film deposition ratio of the vapor deposition method and the sputtering method. 3. A method for producing a thin film according to claim 2, which is formed by sputtering using a high melting point substance. 4. A film manufacturing apparatus for forming a thin film, characterized in that a vapor deposition device and a sputtering device are integrated in one film forming tank, and are configured to operate simultaneously. Device. 5. The sputtering device includes an ion source that ionizes the rare gas,
5. The thin film manufacturing apparatus according to claim 4, comprising an ion beam sputtering section having an acceleration section that accelerates and releases the ions. 6. The thin film manufacturing apparatus according to claim 5, wherein the degree of vacuum in the tank is set to 10-' Torr or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP723583A JPS59134821A (en) | 1983-01-21 | 1983-01-21 | Method and device for manufacturing thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP723583A JPS59134821A (en) | 1983-01-21 | 1983-01-21 | Method and device for manufacturing thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59134821A true JPS59134821A (en) | 1984-08-02 |
Family
ID=11660326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP723583A Pending JPS59134821A (en) | 1983-01-21 | 1983-01-21 | Method and device for manufacturing thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59134821A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6017070A (en) * | 1983-07-11 | 1985-01-28 | Nippon Telegr & Teleph Corp <Ntt> | Method and device for forming thin film |
| JP2020031095A (en) * | 2018-08-21 | 2020-02-27 | 株式会社東芝 | Semiconductor device |
-
1983
- 1983-01-21 JP JP723583A patent/JPS59134821A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6017070A (en) * | 1983-07-11 | 1985-01-28 | Nippon Telegr & Teleph Corp <Ntt> | Method and device for forming thin film |
| JPH048506B2 (en) * | 1983-07-11 | 1992-02-17 | ||
| JP2020031095A (en) * | 2018-08-21 | 2020-02-27 | 株式会社東芝 | Semiconductor device |
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