JPH11288965A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPH11288965A
JPH11288965A JP10108624A JP10862498A JPH11288965A JP H11288965 A JPH11288965 A JP H11288965A JP 10108624 A JP10108624 A JP 10108624A JP 10862498 A JP10862498 A JP 10862498A JP H11288965 A JPH11288965 A JP H11288965A
Authority
JP
Japan
Prior art keywords
bonding
wire
ball
semiconductor device
bonding wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10108624A
Other languages
Japanese (ja)
Other versions
JP3127881B2 (en
Inventor
Tomoko Takizawa
朋子 滝澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP10108624A priority Critical patent/JP3127881B2/en
Publication of JPH11288965A publication Critical patent/JPH11288965A/en
Application granted granted Critical
Publication of JP3127881B2 publication Critical patent/JP3127881B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/4851—Morphology of the connecting portion, e.g. grain size distribution
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01033—Arsenic [As]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To control the internal crystal structure of a bonding initial ball by setting spark conditions to a specified value when forming the initial ball at the tip of a wire. SOLUTION: Immediately prior to bonding in a wire-bonding process, a spark is applied to the tip of a wire by a spark rod, thus melting and recrystallizing the wire and forming an initial ball. In this case, when a wire-bonding device with a spark generator is used in sparking, crystal structure for constituting the initial ball, especially the diameter of a crystal particle 2, can be deliberately changed by changing the spark power and spark time. For example, when a bonding device manufactured is used, for example, by Kaijo Company and bonding a wire the that contains 99.99% or higher Au and whose diameter is 30 μm, the spark time is so that the value that is less than 2 msec.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体装置及びそ
の製造方法に関し、特に半導体素子の実装に用いるワイ
ヤーボンディングの方法、及びワイヤーボンディングさ
れた半導体装置及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a wire bonding method used for mounting a semiconductor element, and a wire-bonded semiconductor device and a method of manufacturing the same.

【０００２】[0002]

【従来の技術】通常、ＬＳＩ等の半導体素子は、パッケ
ージ等の半導体素子を収納する容器に実装され、半導体
素子上のボンディングパッドとパッケージ上のボンディ
ングパッドをボンディングワイヤーにより接続して用い
られる。2. Description of the Related Art Normally, a semiconductor element such as an LSI is mounted on a container for accommodating a semiconductor element such as a package, and a bonding pad on the semiconductor element is connected to a bonding pad on the package by a bonding wire.

【０００３】ワイヤーボンディングの方法として、ボー
ルボンディング方法を用いる場合は、ワイヤーの先端を
放電または水素火炎によりボールを形成し、そのボール
に圧力または超音波を印可することにより、ボンディン
グパッドに接続する。In the case of using a ball bonding method as a wire bonding method, a ball is formed at the tip of the wire by discharge or hydrogen flame, and the ball is applied with pressure or ultrasonic waves to be connected to a bonding pad.

【０００４】[0004]

【発明が解決しようとする課題】しかし、従来のボール
ボンディング方法においては、ワイヤーの先端に形成さ
れたイニシャルボールを半導体素子上のボンディングパ
ッドに接合する際、そのボールに印可された圧力または
超音波による衝撃により、半導体素子のメタライズ部、
あるいはパッシベーション部等に損傷を与え、ボンディ
ングパッドの内部破壊によるボンディング不良を引き起
こす要因となるという問題が生じていた。However, in the conventional ball bonding method, when the initial ball formed at the tip of the wire is bonded to the bonding pad on the semiconductor element, the pressure or ultrasonic wave applied to the ball is bonded. Metallized part of the semiconductor device,
Alternatively, there has been a problem that a passivation portion or the like is damaged, which causes a bonding failure due to internal destruction of a bonding pad.

【０００５】なお、ボンディング不良を防ぐ方法とし
て、たとえば、特開昭６３−７８５４１号公報には、接
合直前にボールをレーザーを用いて加熱する方法が開示
されており、また特開平４−６８７７７号公報には、銅
を用いたボールボンディングに関して、接合後のボール
形状を限定する記載がある。As a method for preventing the bonding failure, for example, Japanese Patent Application Laid-Open No. 63-78541 discloses a method of heating a ball using a laser immediately before bonding. In the gazette, there is a description regarding the ball bonding using copper that limits the ball shape after bonding.

【０００６】本発明は、上記問題点に鑑みてなされたも
のであって、その主たる目的は、ボールに印可された圧
力または超音波による衝撃により、半導体素子のメタラ
イズ部、あるいはパッシベーション部等に損傷を与える
ことのないボンディング方法を提供することにある。The present invention has been made in view of the above problems, and a main object of the present invention is to damage a metallized portion or a passivation portion of a semiconductor element by a pressure applied to a ball or an impact by ultrasonic waves. It is another object of the present invention to provide a bonding method that does not give a problem.

【０００７】[0007]

【課題を解決するための手段】前記目的を達成するた
め、本発明に係る半導体装置の製造方法は、その概要を
述べれば、ワイヤーボンディング工程において、ワイヤ
ーの先端にイニシャルボールを形成する際、スパークタ
イム、スパーク電流またはスパークパワー等のスパーク
条件を、所定の値に設定することにより、ボンディング
イニシャルボールの内部結晶構造を制御することを特徴
とするものであり、より詳細には、下記記載の特徴を有
する。In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention is summarized as follows. By setting spark conditions such as time, spark current or spark power to a predetermined value, the internal crystal structure of the bonding initial ball is controlled, and in more detail, the following features Having.

【０００８】ボンディングワイヤー先端部をボール形状
に放電加工するに際して、所定の放電電流、放電パワー
で、放電時間を所定時間内として前記ボールを形成する
ことにより、前記ボールの単位面積あたりの結晶粒の数
を小としてなるボンディングワイヤーを、ボンディング
パッドと接合することである。When the tip of the bonding wire is subjected to electric discharge machining into a ball shape, the ball is formed with a predetermined discharge current and discharge power and a discharge time within a predetermined time, thereby forming crystal grains per unit area of the ball. Bonding a bonding wire having a small number to a bonding pad.

【０００９】また、本発明の製造方法は、前記ボンディ
ングワイヤー先端部に形成される前記ボールの理論硬度
を所定値以下となるように、前記単位面積あたりの結晶
粒の数が定められることである。Further, in the manufacturing method according to the present invention, the number of crystal grains per unit area is determined so that the theoretical hardness of the ball formed at the tip of the bonding wire becomes a predetermined value or less. .

【００１０】更に、本発明の装置は、半導体素子を搭載
する基板上のボンディングパッドと、パッケージ上のパ
ッドをボンディングワイヤーにより接続してなる半導体
装置において、表面にボンディングパッドを有する基板
と、前記ボンディングワイヤーはその先端部が放電加工
によりボール形状とされ、前記ボールは、その理論硬度
が所定値以下となるような単位面積あたりの結晶粒の数
を有することである。Further, according to the present invention, there is provided a semiconductor device comprising a bonding pad on a substrate on which a semiconductor element is mounted and a pad on a package connected by a bonding wire. The tip of the wire is formed into a ball shape by electric discharge machining, and the ball has a number of crystal grains per unit area such that the theoretical hardness is equal to or less than a predetermined value.

【００１１】以下、本発明の実施の形態及びその具体例
を例示する実施例に即して詳細に説明する。Hereinafter, the present invention will be described in detail with reference to examples illustrating embodiments of the present invention and specific examples thereof.

【００１２】[0012]

【発明の実施の形態】本発明に係る半導体装置の製造方
法は、その好ましい一実施の形態において、半導体素子
と半導体素子を収納するパッケージをボンディングワイ
ヤーで接続する半導体装置の製造方法において、ワイヤ
ー（図１の３）の先端にイニシャルボール（図２の１）
を形成するに際し、イニシャルボール中心の断面におい
て観察される単位面積あたりの結晶粒（図３の２）の数
が１３．８×１０-3／μｍ2以下になるようなスパーク
条件でボンディングを行う。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In a preferred embodiment of the method for manufacturing a semiconductor device according to the present invention, a method for manufacturing a semiconductor device in which a semiconductor element and a package accommodating the semiconductor element are connected by a bonding wire. An initial ball (1 in FIG. 2) is attached to the tip of 3) in FIG.
When bonding is performed, bonding is performed under spark conditions such that the number of crystal grains (2 in FIG. 3) per unit area observed in the cross section at the center of the initial ball is 13.8 × 10 −3 / μm 2 or less. .

【００１３】[0013]

【実施例】上記した本発明の実施の形態についてさらに
詳細に説明すべく、本発明の実施例について図面を参照
して以下に説明する。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing an embodiment of the present invention;

【００１４】［実施例１］まず、本発明の第１の実施例
を、図１乃至図３を用いて説明する。図１乃至図２は、
本発明のワイヤーボンディング装置の一実施例を説明す
るための図であり、図３は、図２のＡ−Ａ′断面を示し
た断面図である。[Embodiment 1] First, a first embodiment of the present invention will be described with reference to FIGS. 1 and 2
FIG. 3 is a view for explaining an embodiment of the wire bonding apparatus of the present invention, and FIG. 3 is a cross-sectional view showing a cross section taken along line AA ′ of FIG.

【００１５】図１乃至図２を参照すると、ワイヤーボン
ディング工程において、ボンディング直前に、ワイヤー
３の先端にスパークロッド４によりスパークをかけて、
ワイヤー３の融解及び再結晶を行い、イニシャルボール
１を形成する。Referring to FIGS. 1 and 2, in a wire bonding step, a spark rod 4 is used to apply a spark to the tip of a wire 3 immediately before bonding.
The initial ball 1 is formed by melting and recrystallizing the wire 3.

【００１６】ここで、スパークを行う際に、スパークジ
ェネレータを付属しているワイヤーボンディング装置を
用いる場合は、スパークパワー及びスパークタイムを変
更することによって、イニシャルボール１を構成する結
晶の構造、特に結晶粒２の径を意図的に変化させること
ができる。Here, when a wire bonding apparatus provided with a spark generator is used to perform sparking, the structure of the crystal constituting the initial ball 1, especially the crystal, is changed by changing the spark power and the spark time. The diameter of the grain 2 can be intentionally changed.

【００１７】また、スパークジェネレータを付属してい
ないワイヤーボンディング装置を用いる場合は、スパー
クパワー及びスパークタイムに準ずるスパーク条件を変
更することによって、同様にイニシャルボール１を構成
する結晶の構造、特に結晶粒２の径を意図的に変化させ
ることができる。When a wire bonding apparatus not provided with a spark generator is used, by changing the spark conditions according to the spark power and the spark time, the structure of the crystal constituting the initial ball 1 is also reduced. 2 can be intentionally changed.

【００１８】詳細に説明すると、スパークによりイニシ
ャルボール１を形成する際して、例えば、（株）カイジ
ョー社製のボンディング装置（型名ＦＢ−１１８Ａ）を
用い、Ａｕを９９．９９％以上含む直径３０μｍのワイ
ヤーをボンディングする場合には、スパークタイムを２
ｍｓｅｃ．よりも短く、あるいはスパークタイムに準ず
るスパーク条件をスパークタイムが２ｍｓｅｃ．よりも
短くなるように設定する。More specifically, when the initial ball 1 is formed by sparking, for example, a bonding apparatus (model name: FB-118A) manufactured by Kaijo Co., Ltd. is used, and a diameter containing 99.99% or more of Au is used. When bonding a 30 μm wire, the spark time should be 2
msec. Is shorter than or equal to the spark time, the spark time is set to 2 msec. Set to be shorter than

【００１９】他の装置を用いる場合や、径や材質が異な
るワイヤーを使用する場合は、イニシャルボール１を構
成する結晶の構造、特に結晶粒２の径が同等になるよう
にスパークタイムを設定すればよい。When another apparatus is used or when wires having different diameters or materials are used, the spark time is set so that the crystal structure constituting the initial ball 1, particularly the diameter of the crystal grains 2, becomes equal. I just need.

【００２０】ここで、結晶粒の再結晶処理をする際、時
間をかけて再結晶させる程、再結晶後の粒度は細かくな
り、反対に、再結晶処理の時間が短い程、大きな結晶粒
を得ることができることは公知であり、本実施例では、
再結晶処理の時間を短くして、イニシャルボール１を構
成している結晶粒２の径を大きくさせる。Here, when recrystallizing a crystal grain, the longer the recrystallization takes time, the finer the grain size after recrystallization, and conversely, the shorter the recrystallization time, the larger the crystal grain. It is known that they can be obtained, and in this example,
The time of the recrystallization treatment is shortened, and the diameter of the crystal grains 2 constituting the initial ball 1 is increased.

【００２１】再結晶処理の時間による結晶粒の形状を図
３及び図４を用いて模式的に説明すると、従来のスパー
ク条件で形成されたイニシャルボール１は、図４に示す
ように、イニシャルボール１を構成している結晶粒２が
小さくなるが、本実施例のように、２ｍｓｅｃ．よりも
短いスパークタイムで再結晶させたイニシャルボール１
では、図３に示すように、イニシャルボール１を構成し
ている結晶粒２を大きくすることができる。The shape of the crystal grains depending on the time of the recrystallization treatment will be schematically described with reference to FIGS. 3 and 4. The initial ball 1 formed under the conventional spark condition is, as shown in FIG. 1 is small, but as in the present embodiment, the crystal grains 2 are 2 msec. Initial ball 1 recrystallized with shorter spark time
Then, as shown in FIG. 3, the crystal grains 2 constituting the initial ball 1 can be enlarged.

【００２２】ここで、結晶粒の大きさと強度との関係を
述べると、Ｈａｌｌ−Ｐｅｔｃｈの関係式より、強度は
粒径の平方根に反比例することが知られている。Here, regarding the relationship between the size of crystal grains and the strength, it is known from the Hall-Petch relation that the strength is inversely proportional to the square root of the grain size.

【００２３】従って、イニシャルボール１を構成してい
る結晶粒２の径が大きい程、すなわち結晶粒の密度が小
さい程、イニシャルボール１自体の理論硬度は低下し、
イニシャルボール１がボンディングパッドへ与える衝撃
荷重は低くすることができる。Therefore, as the diameter of the crystal grains 2 constituting the initial ball 1 increases, that is, as the density of the crystal grains decreases, the theoretical hardness of the initial ball 1 itself decreases,
The impact load applied to the bonding pad by the initial ball 1 can be reduced.

【００２４】これにより、衝撃荷重によるメタライズ
部、あるいはパッシベーション部等に発生するボンディ
ングパッド内部破壊を防止することができ、ボンディン
グ不良を低減させることが可能となる。As a result, it is possible to prevent internal destruction of the bonding pad which occurs in a metallized portion or a passivation portion due to an impact load, and it is possible to reduce bonding defects.

【００２５】本実施例において、ワイヤーの材質はＡｕ
を９９．９９％以上含んでいるワイヤーについて述べた
が、ワイヤーはＡｕに限定されるものではなく、Ａｕに
Ｐｄ等の金属を１％程度含んでいる合金ワイヤーでも良
い。In this embodiment, the material of the wire is Au.
Has been described for wires containing 99.99% or more, but the wires are not limited to Au, and may be alloy wires containing about 1% of a metal such as Pd in Au.

【００２６】［実施例２］次に、本発明の第２の実施例
について説明する。[Embodiment 2] Next, a second embodiment of the present invention will be described.

【００２７】ワイヤーボンディング工程において、Ａｕ
を９９．９９％以上含んでいる材質のワイヤーを使用す
る際、イニシャルボール１を作製する際に、スパークタ
イムを短めに、及び、スパーク電流あるいはスパークパ
ワーを高めに設定し、図３に示すように、イニシャルボ
ール１の中心部断面において観察される単位面積あたり
の結晶粒２の数を１３．８×１０-3／μｍ2以下にす
る。In the wire bonding step, Au
When a wire made of a material containing 99.99% or more of the above is used, when the initial ball 1 is manufactured, the spark time is set shorter and the spark current or spark power is set higher, as shown in FIG. Next, the number of crystal grains 2 per unit area observed in the cross section at the center of the initial ball 1 is set to 13.8 × 10 −3 / μm 2 or less.

【００２８】単位面積あたりの結晶粒２の数が１３．８
×１０-3／μｍ2以下になることにより、結晶粒２の径
は、従来のスパーク条件で形成されたイニシャルボール
１を構成する結晶粒２よりも大きくなる為、イニシャル
ボール１自体の理論硬度は低下する。この時、イニシャ
ルボール１がボンディングパッドへ与える衝撃荷重は低
くなる為、メタライズ部、あるいはパッシベーション部
等に発生するボンディングパッド内部破壊によるボンデ
ィング不良を低減させることが可能となる。The number of crystal grains 2 per unit area is 13.8
Since the diameter of the crystal grains 2 becomes larger than the crystal grains 2 constituting the initial ball 1 formed under the conventional spark condition when the diameter is less than × 10 −3 / μm 2 , the theoretical hardness of the initial ball 1 itself is reduced. Drops. At this time, since the impact load applied to the bonding pad by the initial ball 1 is reduced, it is possible to reduce the bonding failure due to the internal destruction of the bonding pad generated in the metallized portion or the passivation portion.

【００２９】[0029]

【発明の効果】以上説明したように、本発明によれば、
イニシャルボール１の硬度を制御することができる為、
ボンディング工程において発生する、メタライズ部、あ
るいはパッシベーション部等に発生するボンディングパ
ッド内部破壊によるボンディング不良を低減させること
ができ、製品歩留まり、信頼性を特段に向上する、とい
う効果を奏する。As described above, according to the present invention,
Since the hardness of the initial ball 1 can be controlled,
It is possible to reduce bonding defects due to internal destruction of a bonding pad which occurs in a metallized portion or a passivation portion in a bonding step, and has an effect of improving product yield and reliability particularly.

【００３０】その理由は次の通りである。すなわち、ワ
イヤーの先端が放電時の電流によって融解／且つ再結晶
することによって形成されるイニシャルボールは、ワイ
ヤーの先端に与えるスパークタイム及びスパークパワー
によって、イニシャルボールを構成する結晶の構造は変
化する。The reason is as follows. That is, in the initial ball formed by melting / recrystallizing the tip of the wire by the electric current at the time of discharge, the structure of the crystal constituting the initial ball changes depending on the spark time and the spark power given to the tip of the wire.

【００３１】これまでに行った実験から、スパーク電流
あるいはスパークパワーが高い程、また、スパークタイ
ムが短い程、イニシャルボールを構成する結晶粒の径は
大きくなることがわかっている。From the experiments performed so far, it is known that the larger the spark current or spark power and the shorter the spark time, the larger the diameter of the crystal grains constituting the initial ball.

【００３２】強度は粒径の平方根に反比例するという公
知の事実から、イニシャルボールを構成する結晶粒の径
が大きい程、イニシャルボール自体の理論硬度は低下
し、イニシャルボールがボンディングパッドへ与える衝
撃荷重は小さくなる。From the known fact that the strength is inversely proportional to the square root of the particle diameter, as the diameter of the crystal grains constituting the initial ball increases, the theoretical hardness of the initial ball itself decreases, and the impact load applied to the bonding pad by the initial ball is increased. Becomes smaller.

【００３３】従って、衝撃荷重によるメタライズ部、あ
るいはパッシベーション部等に発生するボンディングパ
ッド内部破壊を防止することができ、ボンディング不良
を低減することができるからである。Therefore, it is possible to prevent the internal destruction of the bonding pad which occurs in the metallized portion or the passivation portion due to the impact load, and to reduce the bonding failure.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１及び第２の実施例に係る半導体装
置の構成を説明するための側面図である。FIG. 1 is a side view illustrating a configuration of a semiconductor device according to first and second embodiments of the present invention.

【図２】本発明の第１及び第２の実施例に係る半導体装
置の構成を示した側面図である。FIG. 2 is a side view showing the configuration of the semiconductor device according to the first and second embodiments of the present invention.

【図３】本発明の第１及び第２の実施例に係るイニシャ
ルボールの断面を示す図であり、図２のＡ−Ａ′線の断
面図である。FIG. 3 is a view showing a cross section of an initial ball according to the first and second embodiments of the present invention, and is a cross-sectional view taken along line AA ′ of FIG. 2;

【図４】従来の半導体装置のイニシャルボールの断面を
示す図であり、図２のＡ−Ａ′線の断面図である。4 is a diagram showing a cross section of an initial ball of a conventional semiconductor device, and is a cross section taken along line AA 'of FIG.

【符号の説明】[Explanation of symbols]

１ イニシャルボール ２ 結晶粒 ３ ワイヤー ４ スパークロッド DESCRIPTION OF SYMBOLS 1 Initial ball 2 Crystal grain 3 Wire 4 Spark rod

Claims (11)

【特許請求の範囲】[Claims] 【請求項１】ボンディングワイヤー先端部をボール形状
に放電加工するに際して、所定の放電電流、放電パワー
で、放電時間を所定時間内として前記ボールを形成する
ことにより、前記ボールの単位面積あたりの結晶粒の数
を小としてなるボンディングワイヤーを、ボンディング
パッドと接合する、ことを特徴とする半導体装置の製造
方法。1. The method of claim 1, wherein when the tip of the bonding wire is subjected to electric discharge machining into a ball shape, the ball is formed with a predetermined discharge current and discharge power and a discharge time within a predetermined time, thereby forming a crystal per unit area of the ball. A method for manufacturing a semiconductor device, comprising: bonding a bonding wire having a small number of grains to a bonding pad. 【請求項２】前記ボンディングワイヤー先端部に形成さ
れる前記ボールの理論硬度を所定値以下となるように、
前記単位面積あたりの結晶粒の数が定められる、ことを
特徴とする請求項１記載の半導体装置の製造方法。2. The method according to claim 1, wherein the ball formed at the tip of the bonding wire has a theoretical hardness of a predetermined value or less.
2. The method according to claim 1, wherein the number of crystal grains per unit area is determined. 【請求項３】前記ボンディングワイヤーの先端部に形成
される前記ボールの中心断面における単位面積あたりの
結晶粒の数を所定値以下とする、ことを特徴とする請求
項１記載の半導体装置の製造方法。3. The manufacturing of a semiconductor device according to claim 1, wherein the number of crystal grains per unit area in a central cross section of the ball formed at the tip of the bonding wire is equal to or less than a predetermined value. Method. 【請求項４】前記ボールの中心断面における単位面積あ
たりの結晶粒の数を１３．８×１０-3／μｍ2以下とす
る、ことを特徴とする請求項３記載の半導体装置の製造
方法。4. The method of manufacturing a semiconductor device according to claim 3, wherein the number of crystal grains per unit area in the central cross section of the ball is 13.8 × 10 −3 / μm 2 or less. 【請求項５】前記ボンディングワイヤーがＡｕを主成分
とするワイヤーよりなることを特徴とする請求項１乃至
４のいずれか一に記載の半導体装置の製造方法。5. The method of manufacturing a semiconductor device according to claim 1, wherein said bonding wire comprises a wire containing Au as a main component. 【請求項６】前記ボンディングワイヤーがＡｕを主成分
とし、Ｐｄを含むワイヤーよりなることを特徴とする請
求項１乃至４のいずれか一に記載の半導体装置の製造方
法。6. The method for manufacturing a semiconductor device according to claim 1, wherein said bonding wire is made of a wire containing Au as a main component and containing Pd. 【請求項７】半導体素子を搭載する基板上のボンディン
グパッドと、パッケージ上のパッドをボンディングワイ
ヤーにより接続してなる半導体装置において、表面にボ
ンディングパッドを有する基板と、前記ボンディングワ
イヤーはその先端部が放電加工によりボール形状とさ
れ、前記ボールは、その理論硬度が所定値以下となるよ
うな単位面積あたりの結晶粒の数を有する、ことを特徴
とする半導体装置。7. A semiconductor device comprising a bonding pad on a substrate on which a semiconductor element is mounted and a pad on a package connected by a bonding wire. A semiconductor device having a ball shape formed by electric discharge machining, wherein the ball has a number of crystal grains per unit area such that a theoretical hardness thereof is equal to or less than a predetermined value. 【請求項８】前記ボンディングワイヤーがＡｕを主成分
とするワイヤーよりなることを特徴とする請求項７に記
載の半導体装置。8. The semiconductor device according to claim 7, wherein said bonding wire is made of a wire containing Au as a main component. 【請求項９】前記ボンディングワイヤーがＡｕを主成分
とし、Ｐｄを含むワイヤーよりなることを特徴とする請
求項７に記載の半導体装置。9. The semiconductor device according to claim 7, wherein said bonding wire is made of a wire containing Au as a main component and containing Pd. 【請求項１０】ボンディングパッドに接合されるボンデ
ィングワイヤーであって、その先端部に形成されるボー
ルの理論硬度が所定値以下となるような単位面積あたり
の結晶粒の数を有する、ことを特徴とするボンディング
ワイヤー。10. A bonding wire to be bonded to a bonding pad, wherein the bonding wire has a number of crystal grains per unit area such that a theoretical hardness of a ball formed at a tip portion thereof is equal to or less than a predetermined value. And bonding wire. 【請求項１１】前記ボールが、所定の放電電流、放電パ
ワーで、放電時間を所定時間内とする放電条件にて形成
され、前記ボールの中心断面における単位面積あたりの
結晶粒の数が１３．８×１０-3／μｍ2以下となること
を特徴とする請求項１０記載のボンディングワイヤー。11. The ball is formed under a predetermined discharge current and a predetermined discharge power under a discharge condition in which a discharge time is within a predetermined time, and the number of crystal grains per unit area in a central cross section of the ball is 13. The bonding wire according to claim 10, wherein the bonding wire is 8 × 10 −3 / μm 2 or less.
JP10108624A 1998-04-03 1998-04-03 Semiconductor device and manufacturing method thereof Expired - Fee Related JP3127881B2 (en)

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JP10108624A JP3127881B2 (en) 1998-04-03 1998-04-03 Semiconductor device and manufacturing method thereof

Publications (2)

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JPH11288965A true JPH11288965A (en) 1999-10-19
JP3127881B2 JP3127881B2 (en) 2001-01-29

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268771A (en) * 2004-02-20 2005-09-29 Nippon Steel Corp Gold bonding wire for semiconductor device and its method of connection
JP2006332152A (en) * 2005-05-24 2006-12-07 Matsushita Electric Works Ltd Method of packaging semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268771A (en) * 2004-02-20 2005-09-29 Nippon Steel Corp Gold bonding wire for semiconductor device and its method of connection
JP2006332152A (en) * 2005-05-24 2006-12-07 Matsushita Electric Works Ltd Method of packaging semiconductor device

Also Published As

Publication number Publication date
JP3127881B2 (en) 2001-01-29

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