JPH11260993A - Copper alloy lead material for semiconductor device with excellent solder heat-resistant peeling property - Google Patents
Copper alloy lead material for semiconductor device with excellent solder heat-resistant peeling propertyInfo
- Publication number
- JPH11260993A JPH11260993A JP10061126A JP6112698A JPH11260993A JP H11260993 A JPH11260993 A JP H11260993A JP 10061126 A JP10061126 A JP 10061126A JP 6112698 A JP6112698 A JP 6112698A JP H11260993 A JPH11260993 A JP H11260993A
- Authority
- JP
- Japan
- Prior art keywords
- copper alloy
- layer
- solder
- alloy lead
- lead material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半田耐熱剥離性に
優れる半導体装置用Ｃｕ−Ｂｅ系銅合金リード材に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Cu-Be-based copper alloy lead material for a semiconductor device having excellent resistance to soldering heat peeling.
【０００２】[0002]
【従来の技術】半導体装置は、例えば、図１に示すよう
な、リードフレーム１のダイパッド２に搭載した半導体
素子３とインナーリード４とがボンディングワイヤ５で
接続され、半導体素子３部分が樹脂６で封止されたもの
で、樹脂６から露出したアウターリード７の先端部分が
プリント配線基板８などに半田９により接合される。し
かし、この半田接合部には、半田接合時の加熱または使
用時の発熱により、アウターリードと半田との間にＣｕ
とＳｎの相互拡散反応が起きてＣｕ−Ｓｎ金属間化合物
層が形成され、これが成長するにつれて前記金属間化合
物層とアウターリードとの界面にカーケンダル効果によ
る空孔が発生し、その結果、半田接合強度が低下し、更
には界面剥離が起きるという問題がある。2. Description of the Related Art In a semiconductor device, for example, as shown in FIG. 1, a semiconductor element 3 mounted on a die pad 2 of a lead frame 1 and an inner lead 4 are connected by a bonding wire 5, and a portion of the semiconductor element 3 is formed of a resin 6 The tip of the outer lead 7 exposed from the resin 6 is joined to the printed wiring board 8 or the like by solder 9. However, due to heating during soldering or heat during use, a Cu
And Sn interdiffusion reaction occurs to form a Cu-Sn intermetallic compound layer, and as this grows, vacancies are generated at the interface between the intermetallic compound layer and the outer lead, resulting in solder bonding. There is a problem that the strength is reduced, and further, interfacial peeling occurs.
【０００３】ところで、近年の電子機器の小型化・高機
能化に伴って半導体装置には小型化、薄型化、耐熱性が
要求され、そのため前記半導体装置を構成するリードフ
レームなどの銅合金リード材には強度と耐熱性の向上が
求められるようになった。そして、前記諸特性を満足す
る材料として、ばね性に優れ端子材などに使用されてい
るＣｕ−Ｂｅ系銅合金（Ｃ１７２００合金など）が挙げ
られる。In recent years, as electronic devices have become smaller and more sophisticated, semiconductor devices have been required to be smaller, thinner, and more heat-resistant. Therefore, copper alloy lead materials such as lead frames constituting the semiconductor devices have been required. Have been required to have improved strength and heat resistance. As a material satisfying the above-mentioned various characteristics, a Cu-Be-based copper alloy (e.g., C17200 alloy) which has excellent spring properties and is used for a terminal material or the like is given.
【０００４】[0004]
【発明が解決しようとする課題】しかし、前記Ｃｕ−Ｂ
ｅ系銅合金は、前述のカーケンダル効果による空孔の発
生が特に多く、このため半田接合強度や半田耐熱剥離性
に著しく劣り、半導体装置用リード材に使用するには接
続信頼性の点で不適当とされている。そこで、本発明者
等は、Ｃｕ−Ｂｅ系銅合金リード材の半田接合強度およ
び半田耐熱剥離性の改善について研究し、Ｃｕ−Ｂｅ系
銅合金リード基材の表面にＺｎ層を形成することにより
半田耐熱剥離性などが改善されることを知見し、さらに
研究を進めて本発明を完成させるに至った。本発明は、
半田耐熱剥離性などに優れるＣｕ−Ｂｅ系銅合金リード
材の提供を目的とする。However, the aforementioned Cu-B
The e-based copper alloy has particularly large voids due to the Kirkendall effect described above, and therefore has remarkably poor solder joint strength and solder heat-peelability, and is inferior in connection reliability when used as a lead material for semiconductor devices. Appropriate. Therefore, the present inventors have studied the improvement of the solder bonding strength and the soldering heat-peelability of the Cu-Be-based copper alloy lead material, and by forming a Zn layer on the surface of the Cu-Be-based copper alloy lead substrate. The inventors have found that the soldering heat-peelability and the like are improved, and have further studied to complete the present invention. The present invention
It is an object of the present invention to provide a Cu-Be-based copper alloy lead material excellent in solder heat resistance and the like.
【０００５】[0005]
【課題を解決するための手段】請求項１記載の発明は、
Ｂｅを０．２〜３．０重量％（以下、％と略記）含有
し、残部がＣｕと不可避不純物からなる銅合金リード基
材の少なくとも半田接合される部分にＺｎ層またはＺｎ
を１０％以上含む銅合金層が０．２〜５μｍの厚さに形
成されていることを特徴とする半田耐熱剥離性に優れる
半導体装置用銅合金リード材である。According to the first aspect of the present invention,
Be containing 0.2 to 3.0% by weight of Be (hereinafter abbreviated as%), and a Zn layer or Zn on at least a portion of the copper alloy lead base material to be soldered, the remainder being made of Cu and inevitable impurities.
Is formed in a thickness of 0.2 to 5 [mu] m, which is excellent in soldering heat-peeling resistance.
【０００６】請求項２記載の発明は、Ｂｅを０．２〜
３．０重量％（以下、％と略記）含有し、さらに副成分
としてＮｉ、Ｃｏ、Ｆｅ、Ｓｉ、Ｐｂ、Ａｌ、Ｚｒ、Ｍ
ｇ、Ａｇ、Ｔｅのうちの１種または２種以上を合計で
０．００１〜５．０％含有し、残部がＣｕと不可避不純
物からなる銅合金リード基材の少なくとも半田接合され
る部分にＺｎ層またはＺｎを１０％以上含む銅合金層が
０．２〜５μｍの厚さに形成されていることを特徴とす
る半田耐熱剥離性に優れる半導体装置用銅合金リード材
である。According to a second aspect of the present invention, Be is set to 0.2 to 0.2.
3.0% by weight (hereinafter abbreviated as%), and further contain Ni, Co, Fe, Si, Pb, Al, Zr, and M as subcomponents.
g, Ag, and / or Te in a total of 0.001 to 5.0%, and a balance of at least a portion of the copper alloy lead base material including Cu and unavoidable impurities to be solder-bonded. A copper alloy lead material for a semiconductor device excellent in soldering heat-peeling resistance, characterized in that a layer or a copper alloy layer containing 10% or more of Zn is formed in a thickness of 0.2 to 5 μm.
【０００７】[0007]
【発明の実施の形態】請求項１記載の発明の銅合金リー
ド材は、強度、ばね性、耐熱性などに優れるＣｕ−Ｂｅ
合金を基材とし、その表面にＺｎ層またはＺｎを１０％
以上含む銅合金層（以下、前記２層をＺｎ富化層と総称
する）を形成することにより、半田耐熱剥離性などを改
善したものである。前記Ｃｕ−Ｂｅ合金基材のＢｅの含
有量を０．２〜３．０％に規定する理由は０．２％未満
では、前記強度、ばね性、耐熱性などの特性が十分に得
られず、３．０％を超えると加工性が悪化するためであ
る。BEST MODE FOR CARRYING OUT THE INVENTION The copper alloy lead material according to the first aspect of the present invention is Cu-Be having excellent strength, spring property, heat resistance and the like.
Alloy base material, Zn layer or Zn on surface 10%
By forming a copper alloy layer containing the above (hereinafter, the two layers are collectively referred to as a Zn-enriched layer), the solder heat resistance peeling property and the like are improved. The reason for specifying the content of Be in the Cu-Be alloy base material in the range of 0.2 to 3.0% is that if the content is less than 0.2%, the properties such as the strength, spring property, and heat resistance cannot be sufficiently obtained. If the content exceeds 3.0%, the workability deteriorates.
【０００８】請求項２記載の発明の銅合金リード材は、
前記Ｃｕ−Ｂｅ合金に副成分として、Ｎｉ、Ｃｏ、Ｆ
ｅ、Ｓｉ、Ｐｂ、Ａｌ、Ｚｒ、Ｍｇ、Ａｇ、Ｔｅのうち
の１種または２種以上を含有させた合金を基材とするも
ので、前記副成分は強度と耐熱性の向上に寄与する。中
でもＮｉとＣｏはＢｅと化合して析出し前記強度と耐熱
性向上に著しく寄与する。前記副成分の合計含有量を
０．００１〜５．０％に規定する理由は、０．００１％
未満ではその効果が十分に得られず、５．０％を超える
と導電率と加工性が低下するためである。[0008] The copper alloy lead material of the invention according to claim 2 is:
Ni, Co, F as sub-components in the Cu-Be alloy
The base material is an alloy containing one or more of e, Si, Pb, Al, Zr, Mg, Ag, and Te, and the subcomponent contributes to improvement in strength and heat resistance. . Among them, Ni and Co are combined with Be and precipitated to significantly contribute to the improvement of the strength and heat resistance. The reason for defining the total content of the subcomponents as 0.001 to 5.0% is 0.001%
If the amount is less than 50%, the effect cannot be sufficiently obtained.
【０００９】本発明において、銅合金リード材の半田耐
熱剥離性などが前記Ｚｎ富化層により改善される理由
は、前記Ｚｎ富化層は、銅合金リード材の半田接合部に
起きるＣｕとＳｎの相互拡散を抑えてＣｕ−Ｓｎ金属間
化合物層の成長を抑制し、半田接合部に発生する空孔を
低減させるためである。In the present invention, the reason why the Zn-enriched layer improves the solder heat-peeling resistance of the copper alloy lead material is that the Zn-enriched layer is formed of Cu and Sn generated at the solder joint of the copper alloy lead material. This is for suppressing the interdiffusion of Cu and suppressing the growth of the Cu-Sn intermetallic compound layer and reducing the vacancies generated in the solder joint.
【００１０】本発明において、Ｚｎ富化層におけるＺｎ
含有率を１０％以上に規定する理由は、１０％未満では
前記ＣｕとＳｎの相互拡散防止効果が十分に得られない
ためである。Ｚｎ富化層におけるＺｎの含有率は２０％
以上が特に望ましい。また前記Ｚｎ富化層の厚さを０．
２〜５μｍに規定する理由は、０．２μｍ未満ではその
ＣｕとＳｎの相互拡散防止効果が十分に得られず、５μ
ｍを超えると前記効果が飽和し不経済なためである。Ｚ
ｎ富化層の厚さは０．３〜３μｍが特に望ましい。In the present invention, Zn in the Zn-enriched layer
The reason for setting the content to 10% or more is that if it is less than 10%, the effect of preventing the mutual diffusion of Cu and Sn cannot be sufficiently obtained. Zn content in the Zn-enriched layer is 20%
The above is particularly desirable. Further, the thickness of the Zn-enriched layer is set to 0.1.
The reason for defining the thickness to be 2 to 5 μm is that if the thickness is less than 0.2 μm, the effect of preventing mutual diffusion of Cu and Sn cannot be sufficiently obtained.
If m exceeds m, the effect is saturated and uneconomical. Z
The thickness of the n-enriched layer is particularly preferably from 0.3 to 3 μm.
【００１１】本発明において、Ｚｎ富化層はＣｕ−Ｂｅ
系銅合金リード材の全面に形成しても良いが、プリント
配線基板などと半田接合される部分にのみ形成すると極
めて経済的である。前記銅合金リード材にＺｎ層を形成
する方法はめっきまたは蒸着により行う。Ｃｕ−Ｚｎ合
金層の形成はＣｕ−Ｚｎ合金をめっきするか、またはＺ
ｎをめっきまたは蒸着させたのち加熱してＺｎを基材に
拡散させて行う。本発明で対象とする半田は、Ｐｂ−Ｓ
ｎ系合金、Ｐｂ−Ｓｎ−Ｓｂ系合金などＳｎを含有する
半田である。[0011] In the present invention, the Zn-enriched layer is made of Cu-Be.
Although it may be formed on the entire surface of the copper alloy lead material, it is extremely economical to form it only on a portion to be soldered to a printed wiring board or the like. The method of forming the Zn layer on the copper alloy lead material is performed by plating or vapor deposition. The Cu—Zn alloy layer is formed by plating a Cu—Zn alloy or
n is plated or vapor-deposited and then heated to diffuse Zn into the substrate. The solder targeted in the present invention is Pb-S
It is a solder containing Sn such as an n-based alloy or a Pb-Sn-Sb-based alloy.
【００１２】[0012]
ＺｎＳＯ4 ・７Ｈ2 Ｏ：２５０ｇ／リットル、Ｎａ2 Ｓ
Ｏ4 ：１００ｇ／リットル。 〔めっき条件〕 浴温度：５０℃、電流密度：８Ａ／ｄｍ2 、ｐＨ：１．
２。 ZnSO 4 · 7H 2 O: 250g / l, Na 2 S
O 4 : 100 g / liter. [Plating conditions] Bath temperature: 50 ° C, current density: 8 A / dm 2 , pH: 1.
2.
【００１３】（実施例２）実施例１のＺｎめっき後の合
金板に下記条件で加熱拡散処理を施して銅合金リード材
を製造した。 〔加熱拡散処理条件〕 雰囲気：Ａｒガス、加熱温度：４５０℃、加熱時間：１
０分。Example 2 A copper alloy lead material was manufactured by subjecting the alloy plate of Example 1 to a Zn-plated alloy plate under heat diffusion treatment under the following conditions. [Heating diffusion treatment conditions] Atmosphere: Ar gas, Heating temperature: 450 ° C, Heating time: 1
0 minutes.
【００１４】（実施例３）厚さ０．２ｍｍのＣｕ−1.9%
Ｂｅ−0.5%Ｎｉ合金板の表面に、Ｚｎを２５〜７５％含
むＣｕ−Ｚｎ合金を、下表に示す組成のめっき浴を用
い、下記めっき条件でめっきして銅合金リード材を製造
した。 〔めっき条件〕 浴温度：３５℃、電流密度：０．８Ａ／ｄｍ2 、ｐＨ：
１１．５。(Example 3) Cu-1.9% 0.2 mm thick
A Cu-Zn alloy containing 25 to 75% of Zn was plated on the surface of a Be-0.5% Ni alloy plate using a plating bath having a composition shown in the following table under the following plating conditions to produce a copper alloy lead material. [Plating conditions] Bath temperature: 35 ° C, current density: 0.8 A / dm 2 , pH:
11.5.
【００１５】（比較例１）Ｚｎのめっき厚さを０．１μ
ｍとした他は、実施例１と同じ方法により銅合金リード
材を製造した。(Comparative Example 1) The plating thickness of Zn was 0.1 μm.
A copper alloy lead material was manufactured in the same manner as in Example 1 except that m was used.
【００１６】（比較例２）厚さ０．２ｍｍのＣｕ−1.9%
Ｂｅ−0.5%Ｎｉ合金板の表面に、Ｃｕ−５％Ｚｎ合金を
下表に示す組成のめっき浴を用い、下記めっき条件でめ
っきして銅合金リード材を製造した。〔めっき浴組成〕 〔めっき条件〕 浴温度：３５℃、電流密度：０．８Ａ／ｄｍ2 、ｐＨ：
１１．５。Comparative Example 2 Cu-1.9% 0.2 mm thick
A copper alloy lead material was manufactured by plating a Cu-5% Zn alloy on the surface of a Be-0.5% Ni alloy plate using a plating bath having a composition shown in the following table under the following plating conditions. (Plating bath composition) [Plating conditions] Bath temperature: 35 ° C, current density: 0.8 A / dm 2 , pH:
11.5.
【００１７】実施例１〜３、比較例１、２で得られた各
々の銅合金リード材からサンプル板を切出し、このサン
プル板の表面に、図２に示すように、銅線10を共晶半田
（Ｐｂ−６３％Ｓｎ合金）９で接合して試験片11を作製
し、これを大気中１５０℃で１０００時間保持（劣化処
理）したのち、この試験片11のサンプル板12と銅線10を
把持して引張って半田接合部13の接合強度を測定した。
半田接合部13は直径６ｍｍの円形とした。Ｚｎ富化層を
形成しない厚さ０．２ｍｍのＣｕ−1.9%Ｂｅ−0.5%Ｎｉ
合金板（従来材）についても同様にして半田接合強度を
測定した。結果を表１に示す。半田接合強度は、劣化処
理後の強度ｎと劣化処理前の強度ｍの比（ｎ／ｍ）の百
分率（半田接合強度残存率）で表した。A sample plate was cut out from each of the copper alloy lead materials obtained in Examples 1 to 3 and Comparative Examples 1 and 2, and a copper wire 10 was eutectically formed on the surface of the sample plate as shown in FIG. A test piece 11 was prepared by bonding with a solder (Pb-63% Sn alloy) 9 and held in the air at 150 ° C. for 1000 hours (deterioration treatment), and then a sample plate 12 of the test piece 11 and a copper wire 10 were prepared. Was gripped and pulled to measure the joint strength of the solder joint 13.
The solder joint 13 was a circle having a diameter of 6 mm. 0.2 mm thick Cu-1.9% Be-0.5% Ni without forming Zn-enriched layer
The solder joint strength of the alloy plate (conventional material) was measured in the same manner. Table 1 shows the results. The solder joint strength was expressed as a percentage (residual solder joint strength) of the ratio (n / m) of the strength n after the deterioration treatment and the strength m before the deterioration treatment.
【００１８】[0018]
【表１】 （注）Ｚｎ富化層の厚さ※はＺｎ濃度１０％以上の厚さである。[Table 1] (Note) The thickness * of the Zn-enriched layer is a thickness with a Zn concentration of 10% or more.
【００１９】表１より明らかなように、本発明例のNo.1
〜7 は、いずれも、半田接合強度残存率が２７％以上で
従来材に較べて格段に優れており、半導体装置用リード
材として十分使用できるものである。他方、比較例のN
o.8はＺｎ富化層の厚さが薄いため、No.9はＺｎ富化層
のＺｎ含有率が小さいため、いずれも半田接合強度残存
率が低かった。なお、本発明例のリード材については劣
化処理を更に長期間行ったが、半田接合部で剥離が起き
るようなことはなく、半田耐熱剥離性にも優れることが
確認された。As is clear from Table 1, No. 1 of the present invention example
In each of Examples No. to No. 7, the residual ratio of solder joint strength is 27% or more, which is far superior to conventional materials, and can be sufficiently used as lead materials for semiconductor devices. On the other hand, N of the comparative example
No. 8 had a small thickness of the Zn-enriched layer, and No. 9 had a low residual ratio of solder joint strength because of a small Zn content of the Zn-enriched layer. The lead material of the example of the present invention was subjected to a deterioration treatment for a longer period of time. However, it was confirmed that peeling did not occur at the solder joint portion, and that the solder material was excellent in heat resistance peeling resistance.
【００２０】（実施例４）基板に、厚さ０．２ｍｍのＣ
ｕ−0.2 〜3.0%Ｂｅ合金板を用いた他は、実施例１と同
じ方法により銅合金リード材を製造した。得られた銅合
金リード材について、実施例１と同じ方法により半田接
合強度を測定した。結果を表２に示す。(Embodiment 4) A 0.2 mm thick C
A copper alloy lead material was manufactured in the same manner as in Example 1 except that a u-0.2 to 3.0% Be alloy plate was used. The solder joint strength of the obtained copper alloy lead material was measured by the same method as in Example 1. Table 2 shows the results.
【００２１】[0021]
【表２】 [Table 2]
【００２２】表２より明らかなように、本発明例の No.
11〜14は、いずれも、半田接合強度残存率が３３％以上
で従来材 (表１のNo.10)に較べて格段に優れており、半
導体装置用リード材として十分使用できるものである。As is evident from Table 2, No. 1
All of Nos. 11 to 14 have a residual ratio of solder joint strength of 33% or more, which is far superior to conventional materials (No. 10 in Table 1), and can be sufficiently used as lead materials for semiconductor devices.
【００２３】[0023]
【発明の効果】以上に述べたように、本発明の銅合金リ
ード材は、強度、ばね性、耐熱性などに優れるＣｕ−Ｂ
ｅ系銅合金を基材とし、その表面にＺｎ富化層を形成し
たもので、前記Ｚｎ富化層は、銅合金リード材の半田接
合部に起きるＣｕとＳｎの相互拡散を抑えてＣｕ−Ｓｎ
金属間化合物層の成長を抑制するので、半田接合部に発
生する空孔が低減して半田耐熱剥離性などが改善され
る。依って工業上顕著な効果を奏する。As described above, the copper alloy lead material according to the present invention is excellent in strength, spring property, heat resistance and the like.
An e-based copper alloy is used as a base material, and a Zn-enriched layer is formed on the surface thereof. The Zn-enriched layer suppresses the interdiffusion of Cu and Sn occurring at the solder joint of the copper alloy lead material, thereby reducing Cu- Sn
Since the growth of the intermetallic compound layer is suppressed, vacancies generated in the solder joints are reduced, and the solder heat resistance and the like are improved. Therefore, there is an industrially significant effect.
【図１】半導体装置の説明図である。FIG. 1 is an explanatory diagram of a semiconductor device.
【図２】半田接合部の接合強度を測定する方法の説明図
である。FIG. 2 is an explanatory diagram of a method for measuring a bonding strength of a solder bonding portion.
１ リードフレーム ２ ダイパッド ３ 半導体素子 ４ インナーリード ５ ボンディングワイヤ ６ 樹脂 ７ アウターリード ８ プリント配線基板 ９ 半田 10 銅線 11 試験片 12 サンプル板 13 半田接合部 DESCRIPTION OF SYMBOLS 1 Lead frame 2 Die pad 3 Semiconductor element 4 Inner lead 5 Bonding wire 6 Resin 7 Outer lead 8 Printed wiring board 9 Solder 10 Copper wire 11 Test piece 12 Sample plate 13 Solder joint
Claims (2)
と略記）含有し、残部がＣｕと不可避不純物からなる銅
合金リード基材の少なくとも半田接合される部分にＺｎ
層またはＺｎを１０％以上含む銅合金層が０．２〜５μ
ｍの厚さに形成されていることを特徴とする半田耐熱剥
離性に優れる半導体装置用銅合金リード材。1. An amount of Be of 0.2 to 3.0% by weight (hereinafter referred to as%
Abbreviated as above), and Zn is added to at least a portion of the copper alloy lead base material to be solder-bonded, the balance being Cu and unavoidable impurities.
Layer or copper alloy layer containing 10% or more of Zn is 0.2 to 5 μm
A copper alloy lead material for a semiconductor device, which is formed with a thickness of m, and has excellent solder heat-peeling resistance.
と略記）含有し、さらに副成分としてＮｉ、Ｃｏ、Ｆ
ｅ、Ｓｉ、Ｐｂ、Ａｌ、Ｚｒ、Ｍｇ、Ａｇ、Ｔｅのうち
の１種または２種以上を合計で０．００１〜５．０％含
有し、残部がＣｕと不可避不純物からなる銅合金リード
基材の少なくとも半田接合される部分にＺｎ層またはＺ
ｎを１０％以上含む銅合金層が０．２〜５μｍの厚さに
形成されていることを特徴とする半田耐熱剥離性に優れ
る半導体装置用銅合金リード材。2. Be is 0.2 to 3.0% by weight (hereinafter referred to as%).
Abbreviated as Ni), Co, and F as accessory components.
e, Si, Pb, Al, Zr, Mg, Ag, and a copper alloy lead base containing 0.001 to 5.0% in total of one or more of them, and the balance being Cu and unavoidable impurities. Zn layer or Z
A copper alloy lead material for a semiconductor device excellent in soldering heat-peeling resistance, wherein a copper alloy layer containing 10% or more of n is formed in a thickness of 0.2 to 5 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10061126A JPH11260993A (en) | 1998-03-12 | 1998-03-12 | Copper alloy lead material for semiconductor device with excellent solder heat-resistant peeling property |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10061126A JPH11260993A (en) | 1998-03-12 | 1998-03-12 | Copper alloy lead material for semiconductor device with excellent solder heat-resistant peeling property |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11260993A true JPH11260993A (en) | 1999-09-24 |
Family
ID=13162091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10061126A Pending JPH11260993A (en) | 1998-03-12 | 1998-03-12 | Copper alloy lead material for semiconductor device with excellent solder heat-resistant peeling property |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11260993A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011519180A (en) * | 2008-04-29 | 2011-06-30 | イルジン カッパー ホイル カンパニー リミテッド | Metal frame for electronic parts |
| WO2018161380A1 (en) * | 2017-03-09 | 2018-09-13 | 苏州金江铜业有限公司 | Tellurium-beryllium-copper alloy and preparation method thereof |
| CN111057886A (en) * | 2019-10-29 | 2020-04-24 | 宁夏中色新材料有限公司 | Preparation method of beryllium copper casting roll sleeve and beryllium copper casting roll sleeve |
-
1998
- 1998-03-12 JP JP10061126A patent/JPH11260993A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011519180A (en) * | 2008-04-29 | 2011-06-30 | イルジン カッパー ホイル カンパニー リミテッド | Metal frame for electronic parts |
| WO2018161380A1 (en) * | 2017-03-09 | 2018-09-13 | 苏州金江铜业有限公司 | Tellurium-beryllium-copper alloy and preparation method thereof |
| CN111057886A (en) * | 2019-10-29 | 2020-04-24 | 宁夏中色新材料有限公司 | Preparation method of beryllium copper casting roll sleeve and beryllium copper casting roll sleeve |
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