JPH11260560A - El element - Google Patents
El elementInfo
- Publication number
- JPH11260560A JPH11260560A JP10055317A JP5531798A JPH11260560A JP H11260560 A JPH11260560 A JP H11260560A JP 10055317 A JP10055317 A JP 10055317A JP 5531798 A JP5531798 A JP 5531798A JP H11260560 A JPH11260560 A JP H11260560A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- insulating layer
- light emitting
- thickness
- scanning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ドットマトリクス
方式のＥＬ（エレクトロルミネッセンス）素子に関す
る。[0001] 1. Field of the Invention [0002] The present invention relates to a dot matrix type EL (electroluminescence) element.
【０００２】[0002]
【従来の技術】一般に、ドットマトリクス方式のＥＬ素
子は、絶縁性基板上に、第１電極、第１絶縁層、発光
層、第２絶縁層、第２電極が順次積層されており、一方
の電極を走査電極、他方の電極を信号電極として表示を
行っている。ＥＬ素子の発光輝度が駆動周波数に比例し
て大きくなることは、一般的に知られていることである
が、ドットマトリクス方式のＥＬ素子においては、駆動
周波数は走査電極の本数によって決まってくる。そこ
で、高輝度のＥＬ素子を得るためには、通常、図３、図
４のように、見かけ上走査電極の本数を極力少なくする
構造がとられている。2. Description of the Related Art In general, a dot matrix type EL device has a first electrode, a first insulating layer, a light emitting layer, a second insulating layer, and a second electrode sequentially laminated on an insulating substrate. The display is performed using the electrodes as scanning electrodes and the other electrode as signal electrodes. It is generally known that the emission luminance of an EL element increases in proportion to the driving frequency. However, in a dot matrix type EL element, the driving frequency is determined by the number of scanning electrodes. Therefore, in order to obtain a high-luminance EL element, a structure is usually adopted in which the number of scanning electrodes is apparently reduced as much as possible, as shown in FIGS.
【０００３】図３のＥＬ素子２００では、基板２０３上
において走査電極２０１と信号電極２０２とが発光層
（図示せず）を挟んで直交するドットマトリクスを形成
している。そして、走査電極２０１を２分割し、走査電
極の配線抵抗を低くし、高い発光輝度を得ようとするも
のである。一方、図４のＥＬ素子３００では、基板３０
３上でドットマトリクスを形成する走査電極３０１と信
号電極３０２のうち走査電極３０１において、一本毎に
反対方向から電極取出しを行っており、駆動回路３０４
を複雑化することなく、高い発光輝度を得ようとするも
のである。In the EL element 200 shown in FIG. 3, a scanning electrode 201 and a signal electrode 202 form a dot matrix orthogonal to each other with a light emitting layer (not shown) interposed on a substrate 203. Then, the scanning electrode 201 is divided into two parts to reduce the wiring resistance of the scanning electrode and obtain a high light emission luminance. On the other hand, in the EL element 300 of FIG.
In the scanning electrode 301 and the signal electrode 302 which form a dot matrix on the scan electrode 3, the electrode is taken out from the opposite direction for each scanning electrode 301, and the driving circuit 304
Is intended to obtain a high light emission luminance without complicating.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記両
ＥＬ素子２００、３００においては、走査電極の取り出
し側に最も近い発光画素（ドット）Ａ１及びＢ１と、最
も遠い発光画素（ドット）Ａ２及びＢ２とには、配線抵
抗による配線遅延が生じ、走査電極２０１、３０１の取
出し側から遠くなればなるほど発光輝度が低くなるた
め、輝度むらが生じる。However, in the two EL elements 200 and 300, the light-emitting pixels (dots) A1 and B1 closest to the scanning electrode extraction side and the light-emitting pixels (dots) A2 and B2 farthest from the scanning electrode take-out side. In this case, a wiring delay occurs due to wiring resistance, and as the distance from the side from which the scanning electrodes 201 and 301 are taken out decreases, the emission luminance decreases, and thus luminance unevenness occurs.
【０００５】なお、図３のＥＬ素子２００においては、
走査電極２０１を２分割して走査電極の配線抵抗を低く
しようとしているが、やはり配線遅延は避けられない。
特に、ＥＬ素子を大面積にすればするほど、走査電極は
長くなるため、走査電極の配線抵抗は高くなり、上記輝
度むらは顕著となってくる。また、図３のＥＬ素子２０
０では、走査電極２０１を２分割しているため、駆動回
路２０４の構成が複雑となり、効率的ではない。[0005] In the EL device 200 shown in FIG.
Although the scanning electrode 201 is divided into two to reduce the wiring resistance of the scanning electrode, a wiring delay is still unavoidable.
In particular, the larger the EL element is, the longer the scanning electrode becomes, so that the wiring resistance of the scanning electrode becomes higher, and the above-mentioned luminance unevenness becomes remarkable. Also, the EL element 20 shown in FIG.
In the case of 0, since the scanning electrode 201 is divided into two, the configuration of the driving circuit 204 is complicated and inefficient.
【０００６】本発明は上記問題点に鑑みて、ドットマト
リクス方式のＥＬ素子において、輝度むらの発生を防止
することを目的とする。SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to prevent the occurrence of luminance unevenness in a dot matrix type EL element.
【０００７】[0007]
【課題を解決するための手段】上記輝度むらは、配線遅
延によって走査電極の取り出し側から遠い方の発光画素
にかけて、見かけ上、発光開始電圧が上昇するために発
生することに着目し、走査電極の取り出し側の発光画素
よりも遠い方の発光画素における発光開始電圧を下げる
ような素子構成とすることで、上記問題の解決を図っ
た。In view of the above-mentioned uneven brightness, attention is paid to the fact that the emission start voltage apparently rises due to a wiring delay to a light emitting pixel farther from the side from which the scanning electrode is taken out, and the scanning electrode is generated. The above problem was solved by adopting an element configuration in which the light emission starting voltage in the light emitting pixel farther than the light emitting pixel on the light extraction side was reduced.
【０００８】ここで、ＥＬ素子の発光開始電圧Ｖthは、
下記の数式１にて示される。Here, the light emission starting voltage Vth of the EL element is
It is shown by the following equation 1.
【０００９】[0009]
【数１】Ｖth＝Ｅａ×（ｔａ＋ｔｉ（εａ／εｉ）） ここで、Ｅａ：発光層のクランプ電界強度 ｔａ：発光層の膜厚 εａ：発光層の比誘電率 ｔｉ：絶縁層の膜厚 εｉ：絶縁層の比誘電率 従って、発光開始電圧は、発光層の膜厚、絶縁層の膜厚
によって変化させることができる。請求項１ないし請求
項３の発明は、発光開始電圧を変化させるために絶縁層
の膜厚を工夫したものである。Vth = Ea × (ta + ti (εa / εi)) where Ea: clamping electric field strength of the light emitting layer ta: film thickness of the light emitting layer εa: relative permittivity of the light emitting layer ti: film thickness of the insulating layer εi : Relative dielectric constant of insulating layer Accordingly, the light emission starting voltage can be changed by the thickness of the light emitting layer and the thickness of the insulating layer. In the inventions of claims 1 to 3, the thickness of the insulating layer is devised to change the light emission starting voltage.
【００１０】なお、発光開始電圧を変化させる方法とし
て発光層の膜厚を変化させることも考えられるが、本発
明では、発光層の膜厚を一定としている。この理由は、
発光層の膜厚は発光輝度に大きな影響を及ぼす（発光輝
度∝発光層膜厚）ため、発光層の膜厚を変化させると、
ますます輝度むらがひどくなってしまうからである。す
なわち、請求項１記載の発明では、絶縁性基板（１）上
に、第１電極（２）、第１絶縁層（３）、発光層
（４）、第２絶縁層（５）、第２電極（６）を順次積層
し、上記両電極のうち一方を走査電極（２）、他方を信
号電極（６）として構成するドットマトリクス方式のＥ
Ｌ素子において、上記両絶縁層のうち少なくとも一方の
絶縁層（３）の膜厚を、走査電極（２）の長手方向に、
電極取り出し側から順に薄くしたことを特徴としてい
る。As a method of changing the light emission starting voltage, it is conceivable to change the thickness of the light emitting layer. However, in the present invention, the thickness of the light emitting layer is fixed. The reason for this is
Since the thickness of the light emitting layer has a large effect on the light emission luminance (light emission luminance / light emitting layer thickness), when the film thickness of the light emitting layer is changed,
This is because the brightness unevenness becomes more and more severe. That is, according to the first aspect of the present invention, on the insulating substrate (1), the first electrode (2), the first insulating layer (3), the light emitting layer (4), the second insulating layer (5), The electrodes (6) are sequentially laminated, and one of the two electrodes is configured as a scanning electrode (2) and the other is configured as a signal electrode (6).
In the L element, the film thickness of at least one of the two insulating layers (3) is set in the longitudinal direction of the scan electrode (2).
It is characterized in that it is made thinner in order from the electrode extraction side.
【００１１】本発明では、走査電極（２）取り出し側か
ら遠い発光画素ほど絶縁層（３）の膜厚が薄いため、走
査電極（２）取り出し側から遠い発光画素の発光開始電
圧は、走査電極（２）取り出し側から近い発光画素の発
光開始電圧より低くなる。従って、配線遅延による見か
け上の発光開始電圧の上昇分を補うことができ、輝度む
らの発生を防止することができる。In the present invention, since the insulating layer (3) is thinner as the light emitting pixel is farther from the scanning electrode (2) take-out side, the light emission starting voltage of the light emitting pixel farther from the scan electrode (2) take-out side is (2) It becomes lower than the light emission start voltage of the light emitting pixel near the take-out side. Therefore, it is possible to compensate for an apparent increase in the light emission start voltage due to the wiring delay, and it is possible to prevent the occurrence of uneven brightness.
【００１２】なお、走査電極（２）の長手方向に電極取
り出し側から順に薄くなっているとは、連続的であって
も、段階的であってもよく、上記数式１等を考慮して設
計することができる。また、ドットマトリクス方式のＥ
Ｌ素子においては、走査電極と信号電極とが直交する領
域が発光画素（表示画素）として形成される。請求項２
記載の発明では、１つの発光画素内における上記両絶縁
層（３、５）の膜厚を同一としているから、発光画素内
の輝度むらもなくすことができる。特に、１つの発光画
素のサイズが大きくなった場合に有効である。The term "thin in order from the electrode extraction side in the longitudinal direction of the scanning electrode (2)" means that the scanning electrode (2) may be continuous or stepwise, and may be designed in consideration of the above equation (1). can do. In addition, dot matrix type E
In the L element, a region where the scanning electrode and the signal electrode are orthogonal to each other is formed as a light emitting pixel (display pixel). Claim 2
In the described invention, since the thicknesses of the two insulating layers (3, 5) in one light emitting pixel are the same, it is possible to eliminate uneven brightness in the light emitting pixel. In particular, this is effective when the size of one luminescent pixel is increased.
【００１３】請求項３では、第１電極と第２電極（２、
６）のうち、少なくとも走査電極（２）側が透明電極で
あることを特徴としており、金属電極に比べて抵抗の高
い透明電極でも輝度むらの生じることのない透明ＥＬ素
子を得ることができる。According to claim 3, the first electrode and the second electrode (2,
Of the above 6), at least the scanning electrode (2) side is characterized by being a transparent electrode, and a transparent EL element free from uneven brightness can be obtained even with a transparent electrode having a higher resistance than a metal electrode.
【００１４】[0014]
【発明の実施の形態】以下、本発明を図に示す実施形態
について説明する。 （第１実施形態）図１は、本発明の第１実施形態に係る
ＥＬ素子１００の縦断面を示した模式図である。本例で
は、ＥＬ素子１００は対角サイズが１０インチのものと
している。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing a first embodiment of the present invention. (First Embodiment) FIG. 1 is a schematic diagram showing a longitudinal section of an EL element 100 according to a first embodiment of the present invention. In this example, the EL element 100 has a diagonal size of 10 inches.
【００１５】ＥＬ素子１００は、絶縁性基板である透明
なガラス基板１上に、順次、以下の薄膜が積層形成され
ている。ここで、例えばＥＬ素子１００の光取出しは、
薄膜積層面と反対のガラス基板１の面の方向（図中の白
抜き矢印方向）に行われる。ガラス基板１上には、例え
ばＩＴＯ（インジウムチンオキサイド）からなる厚さ
（膜厚）６５０ｎｍの透明なストライプ状の第１電極
（走査電極）２が形成されている。そして、電極取出し
側の取り出し側部位２ａにて外部駆動回路７に電気的に
接続されている。In the EL element 100, the following thin films are sequentially formed on a transparent glass substrate 1, which is an insulating substrate. Here, for example, the light extraction of the EL element 100 is as follows.
The process is performed in the direction of the surface of the glass substrate 1 opposite to the thin film lamination surface (the direction of the white arrow in the figure). On the glass substrate 1, a transparent stripe-shaped first electrode (scanning electrode) 2 made of, for example, ITO (indium tin oxide) and having a thickness (film thickness) of 650 nm is formed. Then, it is electrically connected to the external drive circuit 7 at the extraction side portion 2a on the electrode extraction side.
【００１６】第１電極２の形成されたガラス基板１上に
おいて、第１電極２の上には例えば透明な酸化タンタル
（Ｔａ2 Ｏ5 ）を主成分とする第１絶縁層３が形成され
ている。そして、その厚さ（膜厚）は、第１電極２の取
り出し側部位２ａから、第１電極２の長手方向すなわち
反対側の部位２ｂに向かって、順に連続的に薄くなるよ
うに第１絶縁層３が形成されている。On the glass substrate 1 on which the first electrode 2 is formed, a first insulating layer 3 mainly composed of, for example, transparent tantalum oxide (Ta 2 O 5 ) is formed on the first electrode 2. I have. The thickness (film thickness) of the first insulating layer is set so as to be continuously reduced from the extraction side portion 2a of the first electrode 2 to the longitudinal direction of the first electrode 2, that is, the opposite side portion 2b. Layer 3 is formed.
【００１７】具体的には、例えば、上記取り出し側部位
２ａの厚さが５００ｎｍであり、上記反対側の部位２ｂ
の厚さが上記取り出し側部位２ａの厚さよりも数１０ｎ
ｍ〜１００ｎｍ薄くなるように形成されている。第１絶
縁層３の上には、発光層４が形成されている。発光層４
は、例えばマンガン（Ｍｎ）の添加された硫化亜鉛（Ｚ
ｎＳ）で厚さ９５０ｎｍ形成されている。発光層４の上
には、一様に第２絶縁層５が形成されている。第２絶縁
層５は、例えば光学的に透明な酸窒化珪素（ＳｉＯｘＮ
ｙ）から成り、厚さ１２０ｎｍで形成されている。そし
て、第２絶縁層５の上には、例えばＩＴＯからなる厚さ
６５０ｎｍのストライプ状の第２電極（信号電極）６が
形成されている。Specifically, for example, the thickness of the take-out side part 2a is 500 nm, and the thickness of the opposite side part 2b is 500 nm.
Is several tens of n thicker than the thickness of the extraction side portion 2a.
It is formed so as to be thin by m to 100 nm. The light emitting layer 4 is formed on the first insulating layer 3. Light emitting layer 4
Is, for example, zinc sulfide (Z) to which manganese (Mn) is added.
nS) and a thickness of 950 nm. On the light emitting layer 4, the second insulating layer 5 is formed uniformly. The second insulating layer 5 is made of, for example, optically transparent silicon oxynitride (SiOxN
y) and is formed with a thickness of 120 nm. A second electrode (signal electrode) 6 made of, for example, ITO and having a thickness of 650 nm is formed on the second insulating layer 5 in a stripe shape.
【００１８】ここで、第１電極２と第２電極６とは、従
来技術にて述べたようなストライプ電極が直交して構成
されるドットマトリクス電極を構成している。そして、
両電極２、６の直交する領域が表示画素としての発光画
素（発光ドット）として構成され、外部駆動回路７から
電圧印加されることで、発光画素にて発光する。なお、
各電極２、６はストライプの１本毎に外部駆動回路７
に、図示されてはいないが電気的に接続されている次
に、上述のＥＬ素子１００製造方法を以下に述べる。Here, the first electrode 2 and the second electrode 6 constitute a dot matrix electrode in which stripe electrodes are formed orthogonally as described in the prior art. And
A region orthogonal to the two electrodes 2 and 6 is configured as a light emitting pixel (light emitting dot) as a display pixel, and the light emitting pixel emits light when a voltage is applied from the external drive circuit 7. In addition,
Each of the electrodes 2 and 6 has an external drive circuit 7 for each stripe.
Next, a method of manufacturing the above-described EL element 100 will be described below.
【００１９】ガラス基板１上にＩＴＯを一様にＤＣ（直
流電圧）スパッタリングした後、ストライプ形状にエッ
チングして第１電極２を形成する。次に、Ｔａ2 Ｏ5 を
主成分とする第１絶縁層３をスパッタにより形成する。
本例では、アルゴン（Ａｒ）と酸素（Ｏ2 ）をスパッタ
ガスとしてガス圧０．６Ｐａに保持し、Ｔａ2 Ｏ5 を主
成分とする焼結ターゲットを用いて、高周波電力を２ｋ
Ｗから４ｋＷまで徐々に変化させて成膜した。After the ITO is uniformly DC (direct voltage) sputtered on the glass substrate 1, the first electrode 2 is formed by etching in a stripe shape. Next, the first insulating layer 3 mainly composed of Ta 2 O 5 is formed by sputtering.
In this example, argon (Ar) and oxygen (O 2 ) are maintained at a gas pressure of 0.6 Pa as a sputtering gas, and a high-frequency power of 2 k is applied by using a sintered target containing Ta 2 O 5 as a main component.
The film was formed while gradually changing from W to 4 kW.
【００２０】具体的には、基板搬送式のスパッタ装置を
用いて、基板を搬送させる際に、ガラス基板１の向きを
第１絶縁層３を薄くさせたい部分を、基板の進行方向に
対して先頭になるように設置し、基板搬送とともに高周
波電力を徐々に大きくして成膜した。第１絶縁層３の成
膜レートは高周波電力に比例して大きくなるため、高周
波電力の小さいときに成膜される部分の第１絶縁層３の
膜厚は薄くなり、高周波電力を大きいときに成膜される
部分の第１絶縁層３の膜厚は厚くなる。こうして、上記
連続的に薄くなった構造を有する第１絶縁層３を形成し
た。Specifically, when the substrate is transported by using a substrate transport type sputtering apparatus, the direction of the glass substrate 1 is set such that the portion of the first insulating layer 3 where the first insulating layer 3 is to be thinned is shifted with respect to the traveling direction of the substrate. The film was placed at the top, and the high-frequency power was gradually increased with the transfer of the substrate to form a film. Since the film formation rate of the first insulating layer 3 increases in proportion to the high-frequency power, the film thickness of the first insulating layer 3 at a portion where the high-frequency power is low becomes small, and when the high-frequency power is high. The film thickness of the first insulating layer 3 in the portion where the film is formed becomes large. Thus, the first insulating layer 3 having the above-mentioned continuously thinned structure was formed.
【００２１】続いて、第１絶縁層３上に、硫化亜鉛（Ｚ
ｎＳ）を母体材料とし、発光中心としてマンガン（Ｍ
ｎ）を添加したＺｎＳ：Ｍｎから成る発光層４を一様に
形成する。具体的には、ガラス基板１の温度を一定に保
持し、蒸着装置内を５×１０-4Ｐａ以下に維持し、堆積
速度０．１〜０．３ｎｍ／ｓｅｃの条件で電子ビーム蒸
着を行った。Subsequently, on the first insulating layer 3, zinc sulfide (Z
nS) as a base material, and manganese (M
The light emitting layer 4 made of ZnS: Mn to which n) is added is uniformly formed. Specifically, the temperature of the glass substrate 1 is kept constant, the inside of the vapor deposition device is maintained at 5 × 10 −4 Pa or less, and electron beam vapor deposition is performed at a deposition rate of 0.1 to 0.3 nm / sec. Was.
【００２２】この後、真空中４００〜６００℃で発光層
４の熱処理を行った。次に、発光層４の上に、ＳｉＯｘ
Ｎｙから成る第２絶縁層５をスパッタにより形成する。
具体的には、ガラス基板１の温度を３００℃に保持し、
スパッタ装置内にアルゴン（Ａｒ）と窒素（Ｎ2 ）と少
量の酸素（Ｏ2 ）の混合ガスを導入し、ガス圧を０．５
Ｐａに保持し、３ｋＷの高周波電力でシリコンをターゲ
ットとしてＳｉＯｘＮｙ膜を成膜した。Thereafter, the light-emitting layer 4 was subjected to a heat treatment at 400 to 600 ° C. in a vacuum. Next, on the light emitting layer 4, SiOx
A second insulating layer 5 made of Ny is formed by sputtering.
Specifically, the temperature of the glass substrate 1 is maintained at 300 ° C.
A mixed gas of argon (Ar), nitrogen (N 2 ) and a small amount of oxygen (O 2 ) was introduced into the sputtering apparatus, and the gas pressure was reduced to 0.5.
The pressure was kept at Pa, and a SiOxNy film was formed using silicon as a target at a high frequency power of 3 kW.
【００２３】次に、第２絶縁層上にＩＴＯを一様にＤＣ
スパッタリングした後、ストライプ形状にエッチングし
て第２電極６を形成した。ところで、本実施形態によれ
ば、第１電極（走査電極）２の取り出し側部位２ａから
遠い発光画素ほど第１絶縁層３の膜厚が薄いため、上記
取り出し側部位２ａから遠い発光画素の発光開始電圧
は、上記取り出し側部位２ａから近い発光画素の発光開
始電圧より低くなる。従って、配線遅延による見かけ上
の発光開始電圧の上昇分を補うことができる。Next, ITO is uniformly applied on the second insulating layer by DC.
After the sputtering, the second electrode 6 was formed by etching in a stripe shape. By the way, according to the present embodiment, since the thickness of the first insulating layer 3 is smaller as the light emitting pixel is farther from the extraction side portion 2a of the first electrode (scanning electrode) 2, the light emission of the light emitting pixel is farther from the extraction side portion 2a. The start voltage is lower than the light emission start voltage of the light emitting pixel near the take-out side portion 2a. Therefore, it is possible to compensate for the apparent increase in the light emission start voltage due to the wiring delay.
【００２４】また、本実施形態では、外部駆動回路７と
の接続も、通常のドットマトリクス方式のＥＬ素子と同
様の構成が適用できるので、複雑な回路構成は不要であ
る。従って、本実施形態のＥＬ素子１００によれば、効
率よく輝度むらの発生を防止することができる。さら
に、本実施形態では、第１電極と第２電極２、６を、金
属電極に比べて抵抗の高いＩＴＯを用いた透明電極とし
ているが、第１絶縁層３の配線遅延防止効果によって、
輝度むらの発生を防止した透明ＥＬ素子を得ることがで
きる。Further, in this embodiment, the connection to the external drive circuit 7 can be applied to the same configuration as that of a normal dot matrix type EL element, so that a complicated circuit configuration is unnecessary. Therefore, according to the EL element 100 of the present embodiment, it is possible to efficiently prevent the occurrence of uneven brightness. Furthermore, in the present embodiment, the first electrode and the second electrodes 2 and 6 are transparent electrodes using ITO having higher resistance than the metal electrode. However, the first insulating layer 3 has a wiring delay preventing effect.
It is possible to obtain a transparent EL element in which the occurrence of uneven brightness is prevented.
【００２５】（第２実施形態）図２は、本発明の第２実
施形態に係るＥＬ素子１００の縦断面を示した模式図で
ある。第１実施形態と異なる点は、第１絶縁層３が、第
１電極２の長手方向に、電極取り出し側部位２ａから反
対側の部位２ｂに向かって順に連続的に薄くなっている
のではなく、１つの発光画素内では第１絶縁層３の膜厚
が同一（均一）で、段階的に薄くなっている点である。(Second Embodiment) FIG. 2 is a schematic view showing a longitudinal section of an EL device 100 according to a second embodiment of the present invention. The difference from the first embodiment is that the first insulating layer 3 is not continuously thinned in the longitudinal direction of the first electrode 2 in order from the electrode extraction side portion 2a to the opposite portion 2b. The first point is that the thickness of the first insulating layer 3 is the same (uniform) in one luminescent pixel, and is gradually reduced.
【００２６】本実施形態によれば、１つの発光画素内に
おける両絶縁層３、５の膜厚を同一としているから、発
光画素内の輝度むらもなくすことができる。特に、１つ
の発光画素のサイズが大きくなった場合に有効である。 （他の実施形態）なお、上記各実施形態では、第１電極
２を走査電極とし、第１電極２の長手方向に第１絶縁層
３の膜厚を変化させたが、第２電極６を走査電極とし、
第２電極６の長手方向に第１絶縁層３の膜厚を変化させ
たものとしてもよい。According to the present embodiment, since the thicknesses of the insulating layers 3 and 5 in one luminescent pixel are the same, it is possible to eliminate uneven brightness in the luminescent pixel. In particular, this is effective when the size of one luminescent pixel is increased. (Other Embodiments) In each of the above embodiments, the first electrode 2 is used as a scanning electrode and the film thickness of the first insulating layer 3 is changed in the longitudinal direction of the first electrode 2. As a scanning electrode,
The thickness of the first insulating layer 3 may be changed in the longitudinal direction of the second electrode 6.
【００２７】また、上記各実施形態では、第１絶縁層３
の膜厚を変化させたが、光の取り出し側に応じて、第２
絶縁層５の膜厚、または、両絶縁層３、５の膜厚を変化
させたものとしてもよい。また、発光層４としてＺｎ
Ｓ：Ｍｎを用いたが、本発明は発光層の種類によって限
定されることはなく、ＺｎＳ：Ｔｂ、ＳｒＳ：Ｃｅ等他
の材料を用いてもよい。In each of the above embodiments, the first insulating layer 3
Was changed, but depending on the light extraction side, the second
The thickness of the insulating layer 5 or the thickness of both insulating layers 3 and 5 may be changed. Further, Zn as the light emitting layer 4
Although S: Mn was used, the present invention is not limited by the type of the light emitting layer, and other materials such as ZnS: Tb and SrS: Ce may be used.
【図１】本発明の第１実施形態に係るＥＬ素子の縦断面
を示した模式図である。FIG. 1 is a schematic view showing a longitudinal section of an EL element according to a first embodiment of the present invention.
【図２】本発明の第２実施形態に係るＥＬ素子の縦断面
を示した模式図である。FIG. 2 is a schematic diagram showing a vertical cross section of an EL element according to a second embodiment of the present invention.
【図３】従来のＥＬ素子の一例を示す模式図である。FIG. 3 is a schematic view showing an example of a conventional EL element.
【図４】従来のＥＬ素子の他の例を示す模式図である。FIG. 4 is a schematic view showing another example of a conventional EL element.
１…ガラス基板、２…第１電極、３…第１絶縁層、４…
発光層、５…第２絶縁層、６…第２電極。DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 2 ... 1st electrode, 3 ... 1st insulating layer, 4 ...
Light-emitting layer, 5 ... second insulating layer, 6 ... second electrode.
Claims (3)
（２）、第１絶縁層（３）、発光層（４）、第２絶縁層
（５）、第２電極（６）が順次積層され、前記第１及び
第２電極（２、６）のうち一方が走査電極（２）、他方
が信号電極（６）として構成されるドットマトリクス方
式のＥＬ素子において、 前記第１及び第２絶縁層（３、５）のうち少なくとも一
方の絶縁層（３）の膜厚が、前記走査電極（２）の長手
方向に、電極取り出し側から順に薄くなっていることを
特徴とするＥＬ素子。1. A first electrode (2), a first insulating layer (3), a light emitting layer (4), a second insulating layer (5), and a second electrode (6) are provided on an insulating substrate (1). A dot matrix type EL element which is sequentially laminated and one of the first and second electrodes (2, 6) is configured as a scanning electrode (2) and the other is configured as a signal electrode (6). An EL element characterized in that the thickness of at least one of the two insulating layers (3, 5) is gradually reduced in the longitudinal direction of the scanning electrode (2) from the electrode extraction side. .
厚は、前記走査電極（２）と前記信号電極（６）とが直
交することにより形成される発光画素のうち１つの前記
発光画素内では同一であることを特徴とする請求項１に
記載のＥＬ素子。2. The film thickness of the first and second insulating layers (3, 5) is one of luminescent pixels formed by the scanning electrode (2) and the signal electrode (6) being orthogonal to each other. 2. The EL device according to claim 1, wherein the light emitting pixels are the same in one of the light emitting pixels.
ち、少なくとも前記走査電極（２）側が透明電極である
ことを特徴とする請求項１または２に記載のＥＬ素子。3. The EL device according to claim 1, wherein at least the scanning electrode (2) side of the first and second electrodes (2, 6) is a transparent electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10055317A JPH11260560A (en) | 1998-03-06 | 1998-03-06 | El element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10055317A JPH11260560A (en) | 1998-03-06 | 1998-03-06 | El element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11260560A true JPH11260560A (en) | 1999-09-24 |
Family
ID=12995186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10055317A Pending JPH11260560A (en) | 1998-03-06 | 1998-03-06 | El element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11260560A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005034586A1 (en) * | 2003-10-02 | 2005-04-14 | Kabushiki Kaisha Toyota Jidoshokki | Electric field light emitting element |
| JP2007294441A (en) * | 2006-03-31 | 2007-11-08 | Fujifilm Corp | Functional element |
| WO2008072520A1 (en) * | 2006-12-15 | 2008-06-19 | Panasonic Corporation | Linear light-emitting device |
| JP2008166343A (en) * | 2006-12-27 | 2008-07-17 | Matsushita Electric Ind Co Ltd | Linear light-emitting device |
| JP2009048808A (en) * | 2007-08-15 | 2009-03-05 | Panasonic Electric Works Co Ltd | Light-emitting device |
| AT13715U1 (en) * | 2012-04-17 | 2014-07-15 | Tridonic Uk Ltd | Organic light emitting diode array and method of making an organic light emitting diode array |
| EP2893773A4 (en) * | 2012-09-04 | 2016-05-11 | Lg Electronics Inc | Display device using semiconductor light emitting device |
-
1998
- 1998-03-06 JP JP10055317A patent/JPH11260560A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005034586A1 (en) * | 2003-10-02 | 2005-04-14 | Kabushiki Kaisha Toyota Jidoshokki | Electric field light emitting element |
| JPWO2005034586A1 (en) * | 2003-10-02 | 2007-10-04 | 株式会社豊田自動織機 | Electroluminescent device |
| US7855506B2 (en) | 2003-10-02 | 2010-12-21 | Kabushiki Kaisha Toyota Jidoshokki | Electric field light emitting element |
| JP2007294441A (en) * | 2006-03-31 | 2007-11-08 | Fujifilm Corp | Functional element |
| WO2008072520A1 (en) * | 2006-12-15 | 2008-06-19 | Panasonic Corporation | Linear light-emitting device |
| JPWO2008072520A1 (en) * | 2006-12-15 | 2010-03-25 | パナソニック株式会社 | Linear light emitting device |
| JP2008166343A (en) * | 2006-12-27 | 2008-07-17 | Matsushita Electric Ind Co Ltd | Linear light-emitting device |
| JP2009048808A (en) * | 2007-08-15 | 2009-03-05 | Panasonic Electric Works Co Ltd | Light-emitting device |
| AT13715U1 (en) * | 2012-04-17 | 2014-07-15 | Tridonic Uk Ltd | Organic light emitting diode array and method of making an organic light emitting diode array |
| EP2893773A4 (en) * | 2012-09-04 | 2016-05-11 | Lg Electronics Inc | Display device using semiconductor light emitting device |
| US9711692B2 (en) | 2012-09-04 | 2017-07-18 | Lg Electronics Inc. | Display device using semiconductor light emitting devices having different structures |
| EP3789992A1 (en) * | 2012-09-04 | 2021-03-10 | LG Electronics Inc. | Display device using semiconductor light emitting devices |
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