JPS62145695A - Thin film electroluminescence device - Google Patents
Thin film electroluminescence deviceInfo
- Publication number
- JPS62145695A JPS62145695A JP60286128A JP28612885A JPS62145695A JP S62145695 A JPS62145695 A JP S62145695A JP 60286128 A JP60286128 A JP 60286128A JP 28612885 A JP28612885 A JP 28612885A JP S62145695 A JPS62145695 A JP S62145695A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- luminescent
- film layer
- light
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 66
- 238000005401 electroluminescence Methods 0.000 title description 2
- 239000010408 film Substances 0.000 description 12
- 238000007740 vapor deposition Methods 0.000 description 10
- 239000008188 pellet Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 101100348958 Caenorhabditis elegans smf-3 gene Proteins 0.000 description 1
- 229910021175 SmF3 Inorganic materials 0.000 description 1
- 229910004299 TbF3 Inorganic materials 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229940110676 inzo Drugs 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、交流電圧を印加することによって高輝度に発
光が得られる薄膜エレクトロルミネセンス素子の改良に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement in a thin film electroluminescent device that can emit light with high brightness by applying an alternating current voltage.
薄膜エレクトロルミネセンス（以後ＥＬと記す）素子は
、発光センター（中心）を形成する活性物質としてＭｎ
、Ｃｕ、ＴｂＦ３等の不純物をドープしたＺ ｎ Ｓ
％ Ｚ ｎ Ｓ ｅ等からなる半導体発光層に、交流電
界を印加してＥＬ全発光得るものである。この場合、高
輝度発光を得るために発光層の膜ＥＬ素子が一般的に知
られている。この薄膜Ｅ■７素子の一例として、ＺｎＳ
中に発光中心としてＭｎをドープした薄膜ＥＬ素子の基
本構造を第５図に示す。A thin film electroluminescent (hereinafter referred to as EL) device uses Mn as the active material forming the luminescent center.
ZnS doped with impurities such as , Cu, and TbF3
% Zn Se etc., an alternating current electric field is applied to the semiconductor light emitting layer to obtain full EL light emission. In this case, in order to obtain high-intensity light emission, a film EL element having a light emitting layer is generally known. As an example of this thin film E7 element, ZnS
FIG. 5 shows the basic structure of a thin film EL device doped with Mn as a luminescent center.
第５図に基いて薄膜ＥＬ素子の構造を説明すると、ガラ
ス基板１上にＩｎｚ Ｏ：ｌ 、Ｓ ｎ０２等の透明電
極２と、さらにその上に積層してＹｚＯａ、Ｓ ｉ３
Ｎ４ 、Ａ１２０３ 、ＴｉＯ□等からなる第１の誘電
体層３とがスパッタ又は電子ビーム蒸着法等により重畳
形成される。第１の誘電体層３上には、Ｍｎを含むＺｎ
Ｓの焼結ペレットを電子ビーム蒸着することにより、Ｚ
ｎＳ発光層４が形成される。この時、蒸着ペレットであ
るＺｎＳｉＭｎ焼結ペレットには、活性物質となって発
光中心を形成するＭｎが所定の濃度となるようにペレッ
トが製作される。ＺｎＳ発光体層４上には、さらに第１
誘電体層３と同様の材質から成る第２の誘電体層５が積
層される。最後に第２の誘電体層５の上にＡ１等からな
る背面電極６が蒸着成形される。必要に応じて背面電極
６は、パターンニングされる。この薄膜ＥＬ素子は、透
明電極２と背面電極６の間に交流電源７が接続される。The structure of a thin film EL element will be explained based on FIG. 5. A transparent electrode 2 made of InzO:l, Sn02, etc. is placed on a glass substrate 1, and YzOa, Si3, etc. are layered on top of the transparent electrode 2.
A first dielectric layer 3 made of N4, A1203, TiO□, etc. is formed in an overlapping manner by sputtering, electron beam evaporation, or the like. On the first dielectric layer 3, there is Zn containing Mn.
By electron beam evaporation of sintered S pellets, Z
An nS light emitting layer 4 is formed. At this time, the ZnSiMn sintered pellets, which are vapor-deposited pellets, are manufactured so that Mn, which becomes an active substance and forms luminescent centers, has a predetermined concentration. On the ZnS light emitter layer 4, there is further a first layer.
A second dielectric layer 5 made of the same material as dielectric layer 3 is laminated. Finally, a back electrode 6 made of A1 or the like is deposited on the second dielectric layer 5. The back electrode 6 is patterned if necessary. In this thin film EL element, an AC power source 7 is connected between the transparent electrode 2 and the back electrode 6.
透明電極２と背面電極６の間に交流電圧を印加するとＺ
ｎＳ発光層４の両側の誘電体層３．５間に上記交流電圧
が誘起されることになり、従ってＺｎＳ発光層４内に発
生した電界によって伝専帯に励起されかつ加速されて充
分なエネルギーを得た電子が、直接Ｍｎ発光センターを
励起し、励起されたＭｎ発光センターが基底状態に戻る
際にオレンジ色に発光を行う。即ち高電界で加速された
電子がＺｎＳ発光層４中の発光センターであるＺｎサイ
トに入ったＭｎ原子の電子を励起し、基底状態に落ちる
時、約５８００人をピークに幅広い波長領域で強い発光
を行う。When an AC voltage is applied between the transparent electrode 2 and the back electrode 6, Z
The alternating current voltage is induced between the dielectric layers 3.5 on both sides of the nS light emitting layer 4, and therefore, the electric field generated in the ZnS light emitting layer 4 excites and accelerates the transmission to generate sufficient energy. The obtained electrons directly excite the Mn luminescent center, and when the excited Mn luminescent center returns to the ground state, it emits orange light. In other words, electrons accelerated in a high electric field excite the electrons of the Mn atoms that have entered the Zn site, which is the luminescent center in the ZnS luminescent layer 4, and when they fall to the ground state, strong light is emitted in a wide wavelength range with a peak of about 5,800 N. I do.
・上記の如く構造を有した薄膜ＥＬ素子は、平面薄型デ
ィスプレイデバイスとして文字及び図形を含むコンピュ
ータの出力表示端末機器その他種々の表示装置に文字、
記号、静止画像、動画像等の表示手段として利用するこ
とができる。表示装置として用いられる薄膜ＥＬ素子に
おいては、透明電極２及び背面電極６が帯状に形成され
、互いに直交する様に配列されたマトリックス電極構造
が採用されており、透明電極２と背面電極６が平面図的
に見て交叉した位置が表示画面の１画素に相当する。・The thin film EL element having the above structure can be used as a flat thin display device to display characters and figures in computer output display terminal equipment and other various display devices.
It can be used as a means of displaying symbols, still images, moving images, etc. In a thin film EL element used as a display device, a matrix electrode structure is adopted in which the transparent electrode 2 and the back electrode 6 are formed in a band shape and are arranged perpendicularly to each other, and the transparent electrode 2 and the back electrode 6 are formed in a flat surface. Diagrammatically, the crossing position corresponds to one pixel on the display screen.
薄膜ＥＬ素子を使用した表示装置は、従来のブラウン管
（ＣＲＴ）と比較して動作電圧が低く、同じ平面型ディ
スブレスデバイスであるプラズマディスプレイパネル（
ＰＤＰ）と比較すれば重量や強度面で優れており、液晶
（ＬＣＤ）に比較して動作可能温度範囲が広く、応答速
度が速い等の多くの利点を有している。また純固体マト
リックス型パネルであるため動作寿命が長いという優れ
た特徴を有している。Display devices using thin-film EL elements have lower operating voltages than conventional cathode ray tubes (CRTs), and are similar to plasma display panels (which are flat diskless devices).
It is superior in terms of weight and strength when compared to a PDP (PDP), and has many advantages such as a wider operating temperature range and faster response speed than a liquid crystal display (LCD). Furthermore, since it is a pure solid matrix type panel, it has an excellent feature of long operating life.
しかしながら発光体薄膜層は現在の技術水準では、蒸着
やスパッタ等の手段で成膜されるのが一般的であるが、
蒸着やスパッタの手段では一般に結晶性は悪（、厚みが
薄い場合にはこの傾向が著しい。このため、上記結晶性
の悪い部分は発光センターを励起するための電子の加速
が充分に行われず、発光センターの活性が低（、更に非
発光性欠陥が多い等の理由によりＥＬ発光の効率が悪い
。However, at the current state of the art, the light emitting thin film layer is generally formed by means such as vapor deposition or sputtering.
Vapor deposition and sputtering methods generally have poor crystallinity (this tendency is more pronounced when the thickness is thin).For this reason, electrons are not sufficiently accelerated to excite the luminescent centers in the areas with poor crystallinity. The efficiency of EL emission is low due to low activity of the luminescent center (and many non-luminescent defects).
このことは一般に非結晶性や多結晶質の基板上に発光層
材料であるＺｎＳやＺｎ５ｅ等を積層するために生じる
現象である。This phenomenon generally occurs when a light emitting layer material such as ZnS or Zn5e is laminated on an amorphous or polycrystalline substrate.
また発光中心濃度は、発光輝度と密接な関係にあり、発
光中心濃度が増大するにつれて発光輝度は増大し、最適
濃度を経た後に逆に減少する。Furthermore, the luminescent center concentration has a close relationship with the luminescent brightness; as the luminescent center concentration increases, the luminescent brightness increases, and conversely decreases after reaching the optimum concentration.
これらの関係について、本発明者等が行った実験結果の
一例を第２図に示す。横軸は赤色を呈する発光中心であ
るＳｍＦ３の添加量を重量％で示しである。発光層の母
材料はＺｎＳである。縦軸には、ＺｎＳ （１１１）面
の半値幅２θ、単位膜厚当りのＸ線強度１ｚ＋／ｄ、最
高輝度Ｂｍａ ｘがとっである。FIG. 2 shows an example of the results of an experiment conducted by the inventors regarding these relationships. The horizontal axis shows the added amount of SmF3, which is a luminescent center that exhibits red color, in weight %. The base material of the light emitting layer is ZnS. The vertical axis shows the half width 2θ of the ZnS (111) plane, the X-ray intensity per unit film thickness 1z+/d, and the maximum brightness Bmax.
この第２図かられかるように、発光中心濃度がＱ、 ｌ
ｗ ｔ％から１９ｗｔ％の範囲で増大するにつれて、
単位膜厚当りのＸ線強度１ｚ＋／ｄは減少し、半値幅２
θは増大する。このことは発光層ＺｎＳの結晶性が著し
く低下していることを示している。As can be seen from Fig. 2, the luminescent center concentration is Q, l
As increasing from wt% to 19wt%,
The X-ray intensity 1z+/d per unit film thickness decreases, and the half-width 2
θ increases. This indicates that the crystallinity of the light emitting layer ZnS is significantly reduced.
一方最高輝度は１ｗｔ％付近にあり、その近傍では発光
輝度３ｍａｘは小さい。このことは、最適な発光中心濃
度は１ｗｔ％以上にある可能性があるにもかかわらず、
通常の成膜手段では発光中心（２度が１ｗｔ％以上に増
大すると結晶性が低下するため高輝度が得られないとい
うことを示唆している。On the other hand, the maximum brightness is around 1 wt%, and the emission brightness 3max is small in that vicinity. This means that although the optimal luminescent center concentration may be 1 wt% or more,
This suggests that when the luminescent center (2 degrees) increases to 1 wt % or more, high brightness cannot be obtained by ordinary film forming means because the crystallinity decreases.
そこで本発明は、従来の成膜方法では得られない結晶性
の良好な発光体薄膜を有し、より高輝度な輝度特性をも
つ薄膜ＥＬ素子の提供を目的とする。Therefore, an object of the present invention is to provide a thin film EL element that has a luminescent thin film with good crystallinity that cannot be obtained by conventional film forming methods, and has higher luminance characteristics.
ｃ問題点を解決するための手段〕
そこで本発明は、上記目的を達成するために少なくとも
一方が透明電極である一対の電極と、該電極の間に設け
られた発光体薄膜層と、前記一対の電極のうち少なくと
も一方と前記発光体薄膜層との間に介在する誘電体ｇＨ
ｋｉとを存する薄膜エレクトロルミネセンス素子におい
て、；ｉ？７記発先発光体薄膜層前記発光体薄膜層中に
含まれる発光中心のン農度が、前記誘電体涌→層との界
面部から前記発光体層）成層の中心部に向かって濃くな
る濃度勾配をもって形成されているという技術手段を採
用する。c. Means for Solving Problems] To achieve the above object, the present invention provides a pair of electrodes, at least one of which is a transparent electrode, a light-emitting thin film layer provided between the electrodes, and a light emitting thin film layer provided between the electrodes. a dielectric material gH interposed between at least one of the electrodes and the light emitting thin film layer;
In a thin film electroluminescent device having ki ;i? 7. Emitter thin film layer The intensity of the luminescent center contained in the light emitter thin film layer increases from the interface between the dielectric layer and the light emitter layer to the center of the stratification. A technical means is adopted in which it is formed with a concentration gradient.
以下本発明を図示の実施例に基づいて説明する。 The present invention will be explained below based on illustrated embodiments.
第１図中において第５図と同一符号は同一内容を示し、
説明を省略する。In Figure 1, the same symbols as in Figure 5 indicate the same contents,
The explanation will be omitted.
本第１実施例の特徴は、第１の誘電体層３を形成した後
に、発光中心を含まない第１の発光体薄膜層４ａを形成
し、この第１の発光体薄膜層４ａの上に、高い最高輝度
が得られる濃度に設定された発光中心を含む第２の発光
体薄膜層４ｂを形成した点である。The feature of the first embodiment is that after forming the first dielectric layer 3, a first light-emitting thin film layer 4a which does not include a luminescent center is formed, and on this first light-emitting thin film layer 4a, , the second light-emitting thin film layer 4b containing luminescent centers set to a concentration that provides high maximum brightness is formed.
このような構造にすることより、第１の誘電体層３との
境界部分には、発光中心が含まれていないため、非常に
規則正しい良好な結晶性が得られる。しかも第１の発光
体薄膜層４ａの上に形成される第２の発光体薄膜層４ｂ
は、第１の発光体薄膜層４ａと同じ母材（例えばＺｎ５
）であるため、発光中心の濃度にあまり影響を受けるこ
となく、良好な結晶性を保って形成できる。したがって
第２の発光体薄膜層４ｂ中に含まれる発光中心の濃度は
、第２図に示す濃度と最高輝度との関係から、最も高い
最高輝度が得られる濃度に設定することが可能となる。With such a structure, the boundary with the first dielectric layer 3 does not contain a luminescent center, so that very regular and good crystallinity can be obtained. Moreover, a second light emitting thin film layer 4b is formed on the first light emitting thin film layer 4a.
is made of the same base material as the first light emitting thin film layer 4a (for example, Zn5
), it can be formed while maintaining good crystallinity without being affected much by the concentration of the luminescent center. Therefore, the concentration of the luminescent center contained in the second luminescent thin film layer 4b can be set to a concentration that provides the highest maximum brightness from the relationship between the concentration and the maximum brightness shown in FIG.
次に、上記第１および第２の発光体薄膜層の形成方法に
ついて説明する。まずガラス基板１上に透明電極２、第
１の誘電体層３を順に通常の方法で成膜する。第１およ
び第２の発光体薄膜［４ａ。Next, a method for forming the first and second light emitting thin film layers will be described. First, a transparent electrode 2 and a first dielectric layer 3 are sequentially formed on a glass substrate 1 by a conventional method. First and second luminescent thin films [4a.
４ｂは、蒸着又はスパッタあるいはＣＶＤで成膜可能で
ある。4b can be formed by vapor deposition, sputtering, or CVD.
例えば蒸着やスパッタを例にとれば発光中心を全（含ま
ない蒸着ペレット又はスパッタリングターゲットを使用
して成膜した後、発光中心を所定のンＱ度だけ含んだ蒸
着ペレット又はスパッタリングターゲットを使用して成
膜する。あるいは発光中心を全く含まない蒸着ペレット
又はスパッタリングターゲットと発光中心のみの蒸着ベ
レット又はスパッタリングターゲットを別々に、又は同
時に成膜することによっても可能である。この場合、第
２の発光体薄膜層の濃度は以下に列挙する方法によって
決められる。まず、スパック法は、発光体ターゲットと
発光中心のターゲットを別々にスパッタし、その投入パ
ワーの比でもって制御する。For example, in the case of vapor deposition and sputtering, a film is formed using a vapor deposition pellet or sputtering target that does not contain all luminescent centers, and then a vapor deposition pellet or sputtering target that contains the luminescent center by a predetermined number of degrees is used. Alternatively, it is also possible to deposit a vapor deposition pellet or sputtering target that does not contain any luminescent centers and a vapor deposition pellet or sputtering target that contains only luminescent centers separately or simultaneously.In this case, the second luminescent material The concentration of the thin film layer is determined by the method listed below. First, in the sputtering method, a luminescent target and a luminescent center target are separately sputtered, and the sputtering is controlled by the ratio of the input powers.
また、蒸着法の場合は、発光体蒸着ペレットと発光中心
蒸着ペレッ、トを別々に蒸着し、その投入パワーの比で
もって制御する。また、ＣＶＤ法の場合は、発光体薄膜
を形成する材料ガスと発光中心を形成する材料ガスの化
学反応で成膜し、その供給量の比でもって制御する。In the case of the vapor deposition method, the phosphor vapor-deposited pellets and the luminescent center vapor-deposited pellets are separately vapor-deposited and controlled by the ratio of their input powers. Furthermore, in the case of the CVD method, the film is formed by a chemical reaction between a material gas for forming the light-emitting thin film and a material gas for forming the luminescent center, and the film is controlled by the ratio of the supply amounts.
ここで、発光中心濃度の厚さ方向の濃度分布を第３図に
示す。曲線Ｓ１は従来技術による発光中心濃度分布で、
発光体薄膜層の全膜厚に対して一定である。曲線Ｓ２は
所定の膜厚まで発光中心を全く含まない発光体薄膜層４
ａを成膜した後、所定の発光中心濃度をもつ発光体薄膜
層４ｂを成膜する場合である。また曲線Ｓ３は所定の膜
厚まで発光中心を全く含まない発光体薄膜層４ａを成膜
した後、所定の発光中心濃度になるまで徐々に発光中心
濃度を増大させた発光体薄膜層４ｂを成膜させた場合で
ある。Here, the concentration distribution of the luminescent center concentration in the thickness direction is shown in FIG. Curve S1 is the emission center concentration distribution according to the conventional technology,
It is constant over the entire thickness of the light emitter thin film layer. Curve S2 represents the luminescent thin film layer 4 that does not contain any luminescent centers up to a predetermined film thickness.
This is a case where, after forming a film, a light emitting thin film layer 4b having a predetermined luminescent center concentration is formed. Curve S3 indicates that after forming a phosphor thin film layer 4a that does not contain any luminescent centers to a predetermined thickness, a phosphor thin film layer 4b is formed in which the luminescent center concentration is gradually increased until a predetermined luminescent center concentration is reached. This is the case when a film is formed.
曲線ｓＩ、３２の場合はいずれも発光中心をもつ第２の
発光体薄膜層４ｂを成膜する前に発光中心を全く含まな
い第１の発光体薄膜層４ａを成膜するため、発光中心を
もつ発光体薄膜層４ｂの結晶性は、上述したようにＣの
場合に比べて向上する。In the case of curves sI and 32, the first luminescent thin film layer 4a which does not contain any luminescent center is formed before forming the second luminescent thin film layer 4b which has a luminescent center, so the luminescent center is As described above, the crystallinity of the light-emitting thin film layer 4b is improved compared to the case of C.
第１図に示す構造の薄膜ＥＬ素子の輝度特性の代表例を
第４図に示す。図中においてＴ、、Ｔ、。FIG. 4 shows a typical example of the brightness characteristics of the thin film EL element having the structure shown in FIG. In the figure, T,,T,.
Ｔ３の記号は、第４図のＳｌ 、ｓｚ、ｓ、の構造前に
て成膜している。発光体薄膜層のうち、発光中心を含ま
ない第１の発光体薄膜層４ａはＺｎＳを１０００人、発
光中心を含む第２の発光体薄膜層４ｂはＺｎＳ：ＴｂＦ
、を６０００人の厚さに蒸着にて成膜している。発光中
心濃度は５ｗｔ％とした。The symbol T3 indicates that the film is formed before the structures Sl, sz, and s in FIG. Among the light emitting thin film layers, the first light emitting thin film layer 4a that does not contain a luminescent center is made of ZnS, and the second light emitting thin film layer 4b that includes a luminescent center is made of ZnS:TbF.
, was deposited by vapor deposition to a thickness of 6000 mm. The luminescent center concentration was 5 wt%.
この第５図から明らかなように、発光中心を含まない第
１の発光体薄膜層を成膜した後、発光中心を含む第２の
発光体薄膜層を成膜したＴｚ 、Ｔ：＋の場合は、初め
から発光中心を含む発光体薄膜層を成膜したＣの場合に
比べて、結晶性が向上したため、輝度は増大し、発光開
始のしきい値電圧は低下している。As is clear from FIG. 5, in the case of Tz, T:+, the first luminescent thin film layer not containing the luminescent center is deposited, and then the second luminescent thin film layer containing the luminescent center is deposited. Compared to the case of C, in which a light-emitting thin film layer containing a light-emitting center was formed from the beginning, the crystallinity was improved, so the brightness was increased and the threshold voltage for starting light emission was lowered.
本発明による薄膜ＥＬ素子は上述の二重絶縁構を持つ構
造を有する薄膜ＥＬ素子にも適用できることは言うまで
もない。It goes without saying that the thin film EL device according to the present invention can also be applied to the thin film EL device having the double insulation structure described above.
以上述べたように、本発明によれば、誘電体→離層との
境界部分の発光体薄膜層の発光中心の濃度は中心部より
非常に低くできる構造であるため、発光体薄膜層全体の
結晶性を良好に保つことができる。しかも、良好な結晶
性を保ちつつ発光体薄膜層の中心部の濃度は、前記境界
部より濃くできるため、従来に比べて最高輝度を非常に
向上させることができるという効果がある。As described above, according to the present invention, the concentration of the luminescent center of the luminescent thin film layer at the boundary between the dielectric and the delamination layer can be much lower than that at the center, so that Good crystallinity can be maintained. Moreover, since the concentration at the center of the light-emitting thin film layer can be higher than that at the boundary while maintaining good crystallinity, there is an effect that the maximum brightness can be greatly improved compared to the conventional method.
第１図は、本発明の薄膜エレクト、ロルミネセンス素子
の構成図、第２図は、発光中心濃度に対する半値幅、Ｘ
線強度、輝度の関係を表わす実験グラフ、第３図は、本
発明による発光体薄膜層の発光中心濃度分布を与える説
明図、第４図は、本発明による薄膜ＥＬ素子の電圧に対
する輝度特性図、第５図は、従来の薄膜エレクトロルミ
ネセンス素子である。
まない第１の発光体薄膜層、４ｂ・・・発光中心を含む
第２の発光体薄膜層、６・・・背面電極。
代理人弁理士 岡 部 隆
α １［Ｉ
Ｓジ３メ１／！（−片）
’；−ｉ ２ Ｅｊ
・：”、 ３ ｖFIG. 1 is a block diagram of the thin film electroluminescence device of the present invention, and FIG. 2 is a diagram showing the half-width and X
An experimental graph showing the relationship between line intensity and brightness, FIG. 3 is an explanatory diagram showing the luminescent center concentration distribution of the light emitting thin film layer according to the present invention, and FIG. 4 is a diagram of brightness characteristics with respect to voltage of the thin film EL element according to the present invention. , FIG. 5 shows a conventional thin film electroluminescent device. 4b: a second light-emitting thin film layer containing a luminescent center; 6: a back electrode; Representative Patent Attorney Takashi Okabe α 1 [I S Ji 3 Me 1/! (-piece) ';-i 2 Ej ・:", 3 v
Claims (2)
、該電極の間に設けられた発光体薄膜層と、前記一対の
電極のうち少なくとも一方と前記発光体薄膜層との間に
介在する誘電体層とを有する薄膜エレクトロルミネセン
ス素子において、前記発光体薄膜層は、前記発光体薄膜
層中に含まれる発光中心の濃度が、前記誘電体層との界
面部から前記発光体薄膜層の中心部に向かって濃くなる
濃度勾配をもって形成されていることを特徴とする薄膜
エレクトロルミネセンス素子。(1) A pair of electrodes, at least one of which is a transparent electrode, a light-emitting thin film layer provided between the electrodes, and a dielectric interposed between at least one of the pair of electrodes and the light-emitting thin film layer. In the thin film electroluminescent device, the luminescent thin film layer has a luminescent thin film layer such that the concentration of luminescent centers contained in the luminescent thin film layer ranges from the interface with the dielectric layer to the center of the luminescent thin film layer. A thin film electroluminescent element characterized in that it is formed with a concentration gradient that becomes darker toward the lower part.
された発光中心を含まない第１発光体薄膜層と、該第１
発光体薄膜層の上に形成された所定濃度の発光中心を含
む第２発光体薄膜層とから構成されていることを特徴と
する特許請求の範囲第１項記載のエレクトロルミネセン
ス素子。(2) The light-emitting thin film layer includes a first light-emitting thin film layer formed on the dielectric layer that does not include a luminescent center;
2. The electroluminescent device according to claim 1, further comprising a second light emitting thin film layer containing a predetermined concentration of luminescent centers formed on the light emitting thin film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60286128A JPH0666154B2 (en) | 1985-12-19 | 1985-12-19 | Thin film electroluminescent device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60286128A JPH0666154B2 (en) | 1985-12-19 | 1985-12-19 | Thin film electroluminescent device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62145695A true JPS62145695A (en) | 1987-06-29 |
| JPH0666154B2 JPH0666154B2 (en) | 1994-08-24 |
Family
ID=17700288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60286128A Expired - Fee Related JPH0666154B2 (en) | 1985-12-19 | 1985-12-19 | Thin film electroluminescent device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0666154B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4983469A (en) * | 1986-11-11 | 1991-01-08 | Nippon Soken, Inc. | Thin film electroluminescent element |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51138188A (en) * | 1975-05-23 | 1976-11-29 | Sharp Corp | Electro luminescence element |
| JPS5514517A (en) * | 1978-07-15 | 1980-02-01 | Sony Corp | Drop-in point setting mechanism for full automatic player |
| JPS6035496A (en) * | 1983-08-04 | 1985-02-23 | 松下電器産業株式会社 | El panel |
-
1985
- 1985-12-19 JP JP60286128A patent/JPH0666154B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51138188A (en) * | 1975-05-23 | 1976-11-29 | Sharp Corp | Electro luminescence element |
| JPS5514517A (en) * | 1978-07-15 | 1980-02-01 | Sony Corp | Drop-in point setting mechanism for full automatic player |
| JPS6035496A (en) * | 1983-08-04 | 1985-02-23 | 松下電器産業株式会社 | El panel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4983469A (en) * | 1986-11-11 | 1991-01-08 | Nippon Soken, Inc. | Thin film electroluminescent element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0666154B2 (en) | 1994-08-24 |
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