JPH11251356A - Wire bonding method and apparatus thereof, and formation of wire bump - Google Patents

Wire bonding method and apparatus thereof, and formation of wire bump

Info

Publication number
JPH11251356A
JPH11251356A JP4988098A JP4988098A JPH11251356A JP H11251356 A JPH11251356 A JP H11251356A JP 4988098 A JP4988098 A JP 4988098A JP 4988098 A JP4988098 A JP 4988098A JP H11251356 A JPH11251356 A JP H11251356A
Authority
JP
Japan
Prior art keywords
wire
electrode
bare chip
spherical body
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4988098A
Other languages
Japanese (ja)
Other versions
JP3551007B2 (en
Inventor
Yohei Kurashima
羊平 倉島
Hidekazu Sato
英一 佐藤
Yoshiaki Mori
義明 森
Koji Aoki
康次 青木
Seigo Mizutani
誠吾 水谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
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Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP4988098A priority Critical patent/JP3551007B2/en
Publication of JPH11251356A publication Critical patent/JPH11251356A/en
Application granted granted Critical
Publication of JP3551007B2 publication Critical patent/JP3551007B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7865—Means for transporting the components to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01082—Lead [Pb]

Abstract

PROBLEM TO BE SOLVED: To provide a wire bonding method and apparatus for relaxing connection conditions without the application of ultrasonic vibration, and also to provide a method for forming a wire bump. SOLUTION: A wire bonding apparatus 10 has its constituent parts which are arranged along a conveyor device 14. The device 14 is provided at its start end with a stocker 16 and at its exit end with a magazine rack 18. A fluorinating section 20 for performing fluorinating treatment over a substrate 13, a bonding section 26 for connecting an electrode 22 and a land 24 by a metal wire 48, and a mold sealing section 28 for sealing a bare chip 12 with mold are provided between the stocker 16 and rack 18. Since the electrode 22 and land 24 are fluorinated on their surfaces, when a metal wire 48 is brought into contact with the electrode 22 or the land 24, both are connected. For this reason, it becomes unnecessary to apply ultrasonic vibration, and the heating temperature can be lowered.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、ワイヤボンディン
グ方法および装置ならびにワイヤバンプの形成方法に係
り、特に微細ピッチの電極を有したベアチップに好適な
ワイヤボンディング方法および装置ならびにワイヤバン
プの形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method and apparatus and a wire bump forming method, and more particularly to a wire bonding method and apparatus suitable for a bare chip having fine pitch electrodes and a wire bump forming method.

【０００２】[0002]

【従来の技術】ウェハより分割されたベアチップを、基
板等に搭載しやすい形状に作り変えるものの一つとして
ワイヤボンディング方式が知られている（他方式として
ＴＡＢ方式、フィリップチップ方式が知られている）。2. Description of the Related Art A wire bonding method is known as one of methods for converting a bare chip divided from a wafer into a shape which can be easily mounted on a substrate or the like (a TAB method and a Philip chip method are known as other methods). ).

【０００３】このワイヤボンディング方式は、基板やリ
ードフレームの表面にダイボンディングされたベアチッ
プの電極（パッド）と、ベアチップ外部に設けられた電
極とを極細の導線（以下外部リード線と称す）で接続し
ていく方式である。同方式を行うワイヤボンディング装
置では、その先端より外部リード線を繰り出し可能であ
るとともに、ベアチップの電極に外部リード線を押し付
け（加圧）、加熱を可能とするキャピラリを有してい
る。そしてこのキャピラリを外部リード線を介してベア
チップの電極に押し付けることで、ベアチップの電極と
外部リード線とが、双方の塑性変形により表面の酸化膜
が破壊され、清浄金属面の接触相互拡散によって接続が
なされるようになっている。なおこの接続時にキャピラ
リに超音波振動を加え、当該キャピラリの先端と外部リ
ード線との間で摩擦を発生させ、温度上昇を図ることで
ベアチップの電極と外部リード線との接続を促進するよ
うにしている。[0003] In this wire bonding method, an electrode (pad) of a bare chip die-bonded to the surface of a substrate or a lead frame and an electrode provided outside the bare chip are connected by a very thin conductive wire (hereinafter referred to as an external lead wire). It is a method of doing. A wire bonding apparatus that performs the same method has a capillary that can feed out an external lead wire from the tip thereof, and presses (presses) the external lead wire against a bare chip electrode and heats the capillary. By pressing the capillary against the bare chip electrode via the external lead wire, the bare chip electrode and the external lead wire are connected to each other by plastic mutual deformation of the oxide film on the surface and contact and mutual diffusion of the clean metal surface. Is made. At the time of this connection, ultrasonic vibration is applied to the capillary to generate friction between the tip of the capillary and the external lead wire, thereby increasing the temperature to promote the connection between the bare chip electrode and the external lead wire. ing.

【０００４】またワイヤボンディング装置を用いた他の
従来例として、ベアチップの電極にバンプを形成する方
法、すなわちワイヤバンプの形成方法がある。これはま
ずキャピラリ先端から引き出した外部リード線に高電圧
で瞬間放電を行い、これを溶融させることで、当該外部
リード線の先端に球状体を形成する。そしてこの球状体
をベアチップの電極に加熱しながら押し付け、その後キ
ャピラリを上方に引き上げることで、外部リード線を球
状体の首下で切断し、当該球状体をベアチップの電極側
に残し、これをバンプとして用いるものである。As another conventional example using a wire bonding apparatus, there is a method of forming bumps on bare chip electrodes, that is, a method of forming wire bumps. In this method, first, an instantaneous discharge is performed at a high voltage on an external lead wire drawn out from the tip of the capillary, and this is melted to form a spherical body at the tip of the external lead wire. Then, the spherical body is pressed against the bare chip electrode while being heated, and then the capillary is pulled upward, so that the external lead wire is cut below the neck of the spherical body, leaving the spherical body on the bare chip electrode side. Is used.

【０００５】[0005]

【発明が解決しようとする課題】しかしながら、上述し
たワイヤボンディング方式では以下の問題点があった。However, the above-described wire bonding method has the following problems.

【０００６】第１の問題点は、ダイボンディングに用い
る接合材（銀ペースト等）に、高融点のものを用いなけ
ればならない点である。すなわち基板等を載せるステー
ジに内蔵されたヒータの加熱にてワーク全体（またはス
テージ）を２００℃以上に加熱し、この状態でベアチッ
プの電極と外部リード線との接続が行われる。このため
ダイボンディングに用いる接合材に低融点のものを使用
すると、ワイヤボンディング時に接合材が溶け出し、ベ
アチップが基板等から移動する恐れがあった。The first problem is that a high melting point bonding material (eg, silver paste) must be used for die bonding. That is, the entire work (or the stage) is heated to 200 ° C. or higher by heating the heater built in the stage on which the substrate and the like are mounted, and in this state, the electrodes of the bare chip and the external lead wires are connected. Therefore, if a low melting point bonding material is used for the die bonding, the bonding material may melt during wire bonding, and the bare chip may move from the substrate or the like.

【０００７】また第２の問題点は、ベアチップがダイボ
ンディングされる対象物がガラス繊維強化エポキシ樹脂
（以下ガラエポ樹脂と称す）などのような材質である
と、キャピラリを押し付けた際、ガラエポ樹脂にたわみ
が生じ、その結果ベアチップの電極とキャピラリとの間
に隙間が生じる（密着性が悪くなる）。このため超音波
振動の伝達効率が悪化し、実装品質が低下する恐れがあ
った。A second problem is that if the object to which the bare chip is die-bonded is made of a material such as glass fiber reinforced epoxy resin (hereinafter referred to as glass epoxy resin), when the capillary is pressed against the glass epoxy resin, Deflection occurs, resulting in a gap between the electrode of the bare chip and the capillary (poor adhesion). For this reason, the transmission efficiency of the ultrasonic vibration is deteriorated, and the mounting quality may be deteriorated.

【０００８】また第３の問題点は、接続を実施するため
の条件範囲が狭いという点である。すなわち接続におい
ては加熱と加圧、そして超音波振動の３項目の条件出し
が必須となるが、例えば加熱を例にとると加熱温度が低
すぎると、ベアチップの電極と外部リード線との接続不
良が発生し、逆に加熱温度が高いとベアチップを破壊す
るという問題が生じる。さらに加圧および超音波振動に
ついても同様の問題点が有り、このためベアチップの電
極と外部リード線との接続合ができる範囲は狭いものと
なっていた。A third problem is that the condition range for implementing the connection is narrow. In other words, in connection, it is necessary to determine the three conditions of heating, pressurization, and ultrasonic vibration. For example, when heating is taken as an example, if the heating temperature is too low, poor connection between the bare chip electrode and the external lead wire is obtained. On the contrary, if the heating temperature is high, the problem of breaking the bare chip occurs. Further, there is a similar problem in pressurization and ultrasonic vibration, so that the range in which the bare chip electrode can be connected to an external lead wire is narrow.

【０００９】本発明は上記従来の問題点に着目し、ベア
チップの電極と外部リード線とを接続する際、超音波振
動を加えることなく、接続条件を緩和することのできる
ワイヤボンディング方法および装置ならびにワイヤバン
プの形成方法を提供することを目的とする。The present invention focuses on the above-mentioned conventional problems, and provides a wire bonding method and apparatus capable of relaxing connection conditions without applying ultrasonic vibration when connecting an electrode of a bare chip and an external lead wire. An object of the present invention is to provide a method for forming a wire bump.

【００１０】[0010]

【課題を解決するための手段】上記目的を達成するため
に本発明の請求項１に記載のワイヤボンディング方法
は、ベアチップの電極と外部電極とをワイヤにて加熱と
加圧とをなしながら接続するワイヤボンディング方法で
あって、電極側とワイヤとの少なくとも一方の表面をハ
ロゲン化し、電極側とワイヤとをハロゲン化面を介して
相互に接合させ固体接合をなすことを特徴としている。According to a first aspect of the present invention, there is provided a wire bonding method for connecting an electrode of a bare chip and an external electrode by heating and pressurizing with a wire. Wherein at least one surface of the electrode side and the wire is halogenated, and the electrode side and the wire are bonded to each other via a halogenated surface to form a solid bond.

【００１１】また請求項２に記載のワイヤボンディング
装置は、基板搬送経路とワイヤ繰出経路を有した配線接
続部を持つワイヤボンディング装置であって、基板搬送
経路とワイヤ繰出経路との少なくとも一方の途中にハロ
ゲン化処理部を設け、基板側に設けたベアチップの電極
および外部電極と、ワイヤとの少なくとも一方をハロゲ
ン化処理部を通過させることを特徴としている。According to a second aspect of the present invention, there is provided a wire bonding apparatus having a wiring connection portion having a substrate transport path and a wire feed path, wherein the wire bonding apparatus includes at least one of the substrate transport path and the wire feed path. And at least one of a bare chip electrode and an external electrode provided on the substrate side and a wire is passed through the halogenated portion.

【００１２】さらに請求項３に記載のワイヤバンプの形
成方法は、ワイヤを溶解させその先端に球状体を形成す
るとともに、ベアチップの電極と球状体との少なくとも
一方の表面をハロゲン化し、電極と球状体とをハロゲン
化面を介して相互に接合させ固体接合をなした後は、球
状体とワイヤとを切断分離し、電極上に球状体を残留さ
せたことを特徴としている。According to a third aspect of the present invention, there is provided a method for forming a wire bump, comprising: dissolving a wire to form a spherical body at a tip thereof; and halogenating at least one surface of the bare chip electrode and the spherical body. Are bonded to each other via a halogenated surface to form a solid bond, and thereafter, the spherical body and the wire are cut and separated, and the spherical body is left on the electrode.

【００１３】これらワイヤボンディング方法および装置
ならびにワイヤバンプの形成方法を用いれば、接続を行
う際に超音波振動を用いる必要が無くなるので、隣合う
部材との接触するのを防止でき、ベアチップの狭ピッチ
化を促進させることができるとともに、接続条件を緩和
させることができる。The use of the wire bonding method and apparatus and the method of forming wire bumps eliminates the necessity of using ultrasonic vibration for connection, so that contact with adjacent members can be prevented, and the pitch of bare chips can be reduced. Can be promoted, and connection conditions can be relaxed.

【００１４】[0014]

【発明の実施の形態】以下、本発明に係るワイヤボンデ
ィング方法および装置ならびにワイヤバンプの形成方法
の具体的実施の形態を図面を参照して詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of a wire bonding method and apparatus and a method for forming a wire bump according to the present invention will be described in detail with reference to the drawings.

【００１５】図１は本実施の形態に係るワイヤボンディ
ング装置の構成を示す構造説明図である。同図に示すよ
うにワイヤボンディング装置１０には、ワイヤ配線対象
となるベアチップ１２をダイボンディングした基板１３
を移送するコンベア装置１４が設けられ、その上流側端
部にはワイヤ配線前の基板１３を保管するストッカ１６
が配置され、またコンベア装置１４の下流側端部にはワ
イヤ配線後の基板１３を保管するマガジンラック１８が
配置されている。そしてこれらストッカ１６とマガジン
ラック１８との間には、ハロゲン処理部となるフッ化処
理部２０が設けられるとともに、当該フッ化処理部２０
の次段には、ベアチップ１２の表面に形成された電極２
２と基板１３上に形成されたランド２４との間を金ワイ
ヤによって接続するボンディング部２６が設けられてい
る。またボンディング部２６の次段にはボンディングさ
れたベアチップの封止をなすモールド封止部２８が設け
られている。FIG. 1 is a structural explanatory view showing the configuration of the wire bonding apparatus according to the present embodiment. As shown in FIG. 1, a wire bonding apparatus 10 includes a substrate 13 on which a bare chip 12 to be wired is die-bonded.
A conveyor device 14 for transferring the substrates 13 is provided, and a stocker 16 for storing the substrate 13 before wire wiring is provided at an upstream end thereof.
Are arranged at the downstream end of the conveyor device 14, and a magazine rack 18 for storing the substrate 13 after the wiring is arranged. Between the stocker 16 and the magazine rack 18, a fluorination processing unit 20 serving as a halogen processing unit is provided.
In the next stage, the electrode 2 formed on the surface of the bare chip 12
A bonding portion 26 is provided to connect the second and the lands 24 formed on the substrate 13 with gold wires. Further, a mold sealing portion 28 for sealing the bonded bare chip is provided at a stage subsequent to the bonding portion 26.

【００１６】フッ化処理部２０は、反応室３０とＨＦガ
ス供給部３２と蒸気発生部３４とから構成されており、
配管３６、３８を介してＨＦガスと水蒸気との混合ガス
が反応室３０へ供給されるようになっている。そして混
合ガスが基板１３の表面すなわちベアチップ１２に触
れ、電極２２がフッ化される。The fluorinating section 20 comprises a reaction chamber 30, an HF gas supply section 32, and a steam generation section 34.
A mixed gas of HF gas and water vapor is supplied to the reaction chamber 30 via the pipes 36 and 38. Then, the mixed gas touches the surface of the substrate 13, that is, the bare chip 12, and the electrode 22 is fluorinated.

【００１７】ベアチップ１２がＨＦガスと水蒸気との混
合ガスにさらされると、ＨＦとＨ２Ｏとがベアチップ１
２の表面において、When the bare chip 12 is exposed to a mixed gas of HF gas and water vapor, HF and H 2 O
On the surface of 2,

【００１８】[0018]

【化１】ＨＦ＋Ｈ２Ｏ→（Ｈ３Ｏ）＋＋Ｆ− の反応を生じ、フッ素イオン（Ｆ−）がベアチップ１２
と反応し、当該ベアチップ１２の表面をフッ化する。そ
して、ベアチップ１２に設けられる電極２２では、その
表面に形成された酸化膜の酸素とＦ−との置換反応が生
じて表面がフッ化され、またはフッ素と酸素の混合した
組成を有する表面が形成される。Embedded image A reaction of HF + H 2 O → (H 3 O) + + F − occurs, and fluorine ions (F − ) are
To fluorinate the surface of the bare chip 12. Then, in the electrode 22 provided on the bare chip 12, the surface of the oxide film formed on the surface thereof is fluorinated by a substitution reaction between oxygen and F − , or a surface having a mixed composition of fluorine and oxygen is formed. Is done.

【００１９】なお、基板１３の表面にフッ化処理を行な
う場合、コンベア装置１４を一旦停止させるとともに、
反応室３０の下部に設けたシャッタ４０を閉じ、混合ガ
スが外部に漏れないようにしている。When performing fluoridation on the surface of the substrate 13, the conveyor device 14 is temporarily stopped, and
The shutter 40 provided at the lower part of the reaction chamber 30 is closed to prevent the mixed gas from leaking to the outside.

【００２０】また本装置１０では、フッ化処理をベアチ
ップ１２側だけに施すこととしたが、これにこだわる必
要もなく、外部リード線側、すなわち金ワイヤの表面に
もフッ化処理を施すようにしてもよい。この場合には、
後述するがボンディング部２６におけるキャピラリの先
端開口部付近に混合ガス吹出口を設け、繰り出されたワ
イヤの表面をフッ化するようにしてもよい（図２参
照）。さらにフッ化処理をボンディング部２６側だけに
施すようにしてもよいことは言うまでもない。Further, in the present apparatus 10, the fluoridation treatment is performed only on the bare chip 12 side. However, it is not necessary to stick to this, and the fluorination treatment is also performed on the external lead wire side, that is, the surface of the gold wire. You may. In this case,
As will be described later, a mixed gas outlet may be provided near the tip end opening of the capillary in the bonding portion 26, and the surface of the fed wire may be fluorinated (see FIG. 2). Needless to say, the fluorination treatment may be performed only on the bonding portion 26 side.

【００２１】ボンディング部２６は、その先端に伸縮可
能なキャピラリ４２を有しており、このキャピラリ４２
の先端開口部４４からは、ボビン４６に巻かれた金ワイ
ヤ４８を繰り出し可能にしている。またキャピラリ４２
には図示しないが金ワイヤ４８を把持するためのワイヤ
クランパが設けられている。また先端開口部４４の付近
には水平方向に移動可能となる放電電極５０が設けられ
る。そして当該放電電極５０を先端開口部４４の直下に
移動させることで、先端開口部４４から繰り出された金
ワイヤ４８の先端と放電電極５０との間に電位を持た
せ、放電をなすことにより金ワイヤ４８の先端に金の球
状体を形成出来るようにしている。The bonding portion 26 has a telescopic capillary 42 at the tip thereof.
The gold wire 48 wound around the bobbin 46 can be paid out from the distal end opening 44 of the wire. In addition, the capillary 42
Although not shown, a wire clamper for holding the gold wire 48 is provided. A discharge electrode 50 that can move in the horizontal direction is provided near the tip opening 44. Then, by moving the discharge electrode 50 directly below the distal end opening 44, a potential is provided between the distal end of the gold wire 48 drawn out from the distal end opening 44 and the discharge electrode 50, and gold is generated by discharging. A gold spherical body can be formed at the tip of the wire 48.

【００２２】このように構成されたキャピラリ４２は、
ツール駆動部５２に接続されている。ここでツール駆動
部５２にはあらかじめベアチップ１２における電極２２
の位置と、基板１３上におけるランド２４との位置を示
す座標が記憶されており、この値をもとにキャピラリ４
２を動作させ、電極２２とランド２４とを金ワイヤ４８
にて接続（ワイヤボンディング）するようにしている。
なお電極２２とランド２４との接続時には、コンベア装
置１４は一旦停止しているが、この停止のタイミングは
前段のフッ化処理部２０における基板１３のフッ化処理
時と同期するようにしている。The capillary 42 configured as above is
It is connected to a tool drive unit 52. Here, the tool driving unit 52 has the electrodes 22 on the bare chip 12 in advance.
And the coordinates indicating the position of the land 24 on the substrate 13 are stored.
2 and the electrode 22 and the land 24 are connected to the gold wire 48.
(Wire bonding).
When the electrode 22 and the land 24 are connected, the conveyor device 14 is temporarily stopped. The timing of this stop is synchronized with the fluorination processing of the substrate 13 in the fluorination processing unit 20 in the preceding stage.

【００２３】ボンディング部２６の次段側には、モール
ド封止部２８が配置される。このモールド封止部２８に
はノズル５４が設けられ、当該ノズル５４より封止剤と
なるモールド５６をベアチップ１２上に送り出し、当該
ベアチップ１２およびランド２４のまわりをモールド５
６で封止できるようになっている。On the side next to the bonding section 26, a mold sealing section 28 is disposed. A nozzle 54 is provided in the mold sealing portion 28, and a mold 56 serving as a sealing agent is sent out onto the bare chip 12 from the nozzle 54, and the mold 5 is moved around the bare chip 12 and the land 24.
6 can be used for sealing.

【００２４】このように構成されたワイヤボンディング
装置１０を用いて電極２２とランド２４とを接続する手
順を説明する。A procedure for connecting the electrodes 22 and the lands 24 using the wire bonding apparatus 10 thus configured will be described.

【００２５】まずコンベア装置１４を稼働させ、ストッ
カ１６より基板１３を取り出す。そしてコンベア装置１
４にて取り出された（ワイヤボンディング前の）基板１
３は、フッ化処理部２０へと移動し、この位置で一旦停
止する（コンベア装置１４の一時停止）。フッ化処理部
２０では基板１３の停止とともに反応室３０の出入口に
設けられたシャッタ４０を閉め、反応室３０内外を遮断
するようにしている。そして配管３６、３８を介してＨ
Ｆガス供給部３２、蒸気発生部３４から混合ガスを反応
室３０に送り込み、基板１３のフッ化処理を行う。First, the conveyor device 14 is operated, and the substrate 13 is taken out of the stocker 16. And conveyor device 1
Substrate 1 taken out before 4 (before wire bonding)
3 moves to the fluorination processing unit 20 and temporarily stops at this position (temporary stop of the conveyor device 14). In the fluorination processing section 20, the shutter 40 provided at the entrance and exit of the reaction chamber 30 is closed when the substrate 13 is stopped, so that the inside and outside of the reaction chamber 30 are shut off. And H through pipes 36 and 38
The mixed gas is fed into the reaction chamber 30 from the F gas supply unit 32 and the steam generation unit 34, and the substrate 13 is fluorinated.

【００２６】基板１３のフッ化処理を終了すると、シャ
ッタ４０を開くとともに、コンベア装置１４を再び稼働
させ、反応室３０よりフッ化処理された基板１３を取り
出す。そして当該基板１３は次段側のボンディング部２
６へと移動する。When the fluoridation of the substrate 13 is completed, the shutter 40 is opened and the conveyor device 14 is operated again to take out the fluorinated substrate 13 from the reaction chamber 30. Then, the substrate 13 is connected to the next-stage bonding portion 2.
Move to 6.

【００２７】ボンディング部２６における所定の位置に
基板１３が到達すると、再びコンベア装置１４の稼働を
一旦停止する。ところでこのコンベア装置１４の停止
は、前段側の基板１３のフッ化処理と同期させるように
しており、コンベア装置１４が停止する度に前後の基板
１３のフッ化処理と、電極２２とランド２４との接続と
が同時に行えるようになっている。When the substrate 13 reaches a predetermined position in the bonding section 26, the operation of the conveyor device 14 is temporarily stopped again. By the way, the stop of the conveyor device 14 is synchronized with the fluorination process of the substrate 13 on the preceding stage. Each time the conveyor device 14 stops, the fluorination process of the front and rear substrates 13 and the electrode 22 and the land 24 Can be connected at the same time.

【００２８】マウント部２４に基板１３が保持される
と、あらかじめ記憶されていた電極２２とランド２４と
の座標位置情報に沿って、ツール駆動部５２がキャピラ
リ４２を稼働させる。すなわちマウント部２４に基板１
３が保持されると、まずキャピラリ４２には、放電電極
５０が接近し、先端開口部４４の直下にて停止する。そ
して先端開口部４４から繰り出された金ワイヤ４８の先
端と、放電電極５０との間に電位を発生させ、両者の間
に放電を起こす。この放電により金ワイヤ４８の先端が
溶融し、当該先端には金の球状体５８が形成される（図
２参照）。そして先端開口部４４に球状体５８が形成さ
れた後に、キャピラリ４２をベアチップ１２側へと移動
させ、球状体５８が電極２２に接するようにする。When the substrate 13 is held by the mount section 24, the tool driving section 52 operates the capillary 42 in accordance with the coordinate position information between the electrode 22 and the land 24 stored in advance. That is, the substrate 1 is
When 3 is held, first, the discharge electrode 50 approaches the capillary 42 and stops immediately below the distal end opening 44. Then, a potential is generated between the distal end of the gold wire 48 drawn out from the distal end opening 44 and the discharge electrode 50, and a discharge is generated between the two. This discharge melts the tip of the gold wire 48, and forms a gold spherical body 58 at the tip (see FIG. 2). After the spherical body 58 is formed in the distal end opening 44, the capillary 42 is moved toward the bare chip 12 so that the spherical body 58 comes into contact with the electrode 22.

【００２９】ここで電極２２の表面は、前段の反応室３
０にてフッ化処理がなされているため、両者の接続は超
音波振動を加えずに行うことができる。このため超音波
振動を加えることにより生ずるキャピラリ４２の損傷
や、基板１３のたわみによる超音波振動の伝達不良とい
った障害を解決することができる。Here, the surface of the electrode 22 is
Since the fluorination treatment is performed at 0, the connection between the two can be performed without applying ultrasonic vibration. For this reason, it is possible to solve problems such as damage to the capillary 42 caused by applying ultrasonic vibration and poor transmission of ultrasonic vibration due to bending of the substrate 13.

【００３０】また接続するいずれか一方の表面にフッ化
処理を施したことから、キャピラリ４２の下方に設けら
れた基板１３の保持をなすステージ（図示せず）のヒー
タ温度を低く抑えることができる。すなわち従来ではヒ
ータの加熱温度を２００℃以上に設定していたが、フッ
化処理を施すことによって１００℃台の温度で両者の接
続を行うことができ、基板１３に耐熱性の低いものを適
用することができる。そして超音波振動の削除とヒータ
の加熱温度が下げられることから、接続のための条件が
緩くなり、工程上での調整時間を短縮することができ
る。また超音波振動を削除したことから、既に電極２２
とランド２４との接続を行っている隣合う金ワイヤ４８
同士が、接触するのを防止することができ、隣合う電極
２２およびランド２４が微細ピッチである場合でも確実
に電極２２とランド２４とを接続することができる。さ
らに加熱温度を下げられることからダイボンディングに
用いる接合材となる銀ペーストを融点の低いものに置き
換えることが可能となり、用途に応じた接合材を選択す
ることが可能となる。そして超音波振動を発生させる装
置をキャピラリ４２に備える必要がないことから、代わ
りに当該キャピラリ４２側にヒータを設け、ステージに
内蔵されたヒータと両方で加熱を行うようにしてもよ
い。Since one of the surfaces to be connected is fluorinated, the heater temperature of a stage (not shown) for holding the substrate 13 provided below the capillary 42 can be kept low. . That is, in the related art, the heating temperature of the heater is set to 200 ° C. or higher, but by performing the fluorination treatment, the two can be connected at a temperature on the order of 100 ° C. can do. Since the ultrasonic vibration is eliminated and the heating temperature of the heater is lowered, the conditions for connection are relaxed, and the adjustment time in the process can be reduced. Also, since the ultrasonic vibration has been deleted, the electrode 22 has already been removed.
Adjacent gold wires 48 connecting the lands 24
The electrodes 22 and the lands 24 can be reliably connected even when the adjacent electrodes 22 and lands 24 have a fine pitch. Further, since the heating temperature can be lowered, it is possible to replace the silver paste serving as the bonding material used for die bonding with a material having a low melting point, and it is possible to select a bonding material according to the application. Since it is not necessary to provide a device for generating ultrasonic vibration in the capillary 42, a heater may be provided on the capillary 42 side instead, and heating may be performed by both the heater incorporated in the stage.

【００３１】電極２２に球状体５８を接続した後は、キ
ャピラリ４２を上昇させ先端開口部４４から金ワイヤ４
８を引き出すとともに、キャピラリ４２をランド２４側
に移動させる。そして金ワイヤ４８をフッ化処理された
ランド２４に押し付け両者を接続する。その後は、キャ
ピラリ４２内の図示しないクランパを稼働させ、金ワイ
ヤ４８を把持するとともに、キャピラリ４２を上昇させ
る。この上昇作用により金ワイヤ４８は、ランド２４の
接続直後で切断し、基板１３側には電極２２とランド２
４とをループ状に接続する金ワイヤ４８が残る。そして
この一連の作業を電極２２の数量分だけ行えば、ベアチ
ップ１２と基板１３との接続が完了する。After the spherical body 58 is connected to the electrode 22, the capillary 42 is raised and the gold wire 4
8 is pulled out, and the capillary 42 is moved to the land 24 side. Then, the gold wire 48 is pressed against the fluorinated land 24 to connect them. Thereafter, a clamper (not shown) in the capillary 42 is operated to hold the gold wire 48 and raise the capillary 42. Due to this rising action, the gold wire 48 is cut immediately after the connection of the land 24, and the electrode 22 and the land 2 are
4 remains in a loop shape. When this series of operations is performed for the number of the electrodes 22, the connection between the bare chip 12 and the substrate 13 is completed.

【００３２】ところで電極２２と金ワイヤ４８、および
ランド２４と金ワイヤ４８とが接続するメカニズムは、
次のように考えられる。電極２２およびランド２４表面
のフッ素と結合している表面部の原子は、金ワイヤ４８
と接触することによりフッ素との結合が切れ、金ワイヤ
４８の原子と結合することにより接続が行なわれる。そ
して、結合が切れたフッ素は、当該フッ素を取り込みや
すい側の内部に拡散して行くものと思われる。The mechanism by which the electrode 22 and the gold wire 48 and the land 24 and the gold wire 48 are connected is as follows.
It is considered as follows. The atoms of the surface of the electrode 22 and the land 24 which are bonded to the fluorine on the surface of the land 24 are gold wires 48.
The bond with fluorine is broken by contacting with gold, and the bond is established by bonding with the atoms of the gold wire 48. Then, it is considered that the broken fluorine is diffused into the inside on the side where the fluorine is easily taken up.

【００３３】また前述したように本実施の形態に係る第
１実施例では、基板１３側の表面にフッ化処理を施し、
金ワイヤとの接続を図ることとしたが、これは一例であ
って他にも様々な形態が考えられる。As described above, in the first example according to the present embodiment, the surface on the substrate 13 side is subjected to fluorination treatment,
Although the connection with the gold wire was determined, this is merely an example, and various other forms can be considered.

【００３４】図２は、第２実施例となる金ワイヤ４８の
表面にフッ化処理を施すための構成を示す説明図であ
る。同図においては、金ワイヤ４８の表面にフッ化処理
を施すためキャピラリ４２の周囲にガス噴射ノズル６０
を設置し、ＨＦガス供給部３２と蒸気発生部３４とから
配管３６、配管３８を介して混合ガスを噴射可能にして
いる。なおその他の構成は、第１実施例で説明したワイ
ヤボンディング装置１０と同様の構成であるため、同一
の部番を付与するものとする。FIG. 2 is an explanatory view showing a structure for performing a fluorination treatment on the surface of the gold wire 48 according to the second embodiment. In the figure, a gas injection nozzle 60 is provided around the capillary 42 in order to perform fluoridation on the surface of the gold wire 48.
Is installed so that the mixed gas can be injected from the HF gas supply unit 32 and the steam generation unit 34 via the pipe 36 and the pipe 38. Other configurations are the same as those of the wire bonding apparatus 10 described in the first embodiment, and therefore the same part numbers are given.

【００３５】同図の構成を用いて電極２２とランド２４
とを金ワイヤ４８で接続する手順を説明すると、まず同
図（１）に示すように放電電極５０を先端開口部４４の
直下に移動させ放電作用により金ワイヤ４８の先端に球
状体５８を形成する。そしてこの球状体５８の形成とと
もに、ガス噴射ノズル６０から混合ガスを噴射させ、球
状体５８周囲を混合ガスの雰囲気にすることで、球状体
５８の表面にフッ化処理を施す。The electrode 22 and the land 24 are formed by using the configuration shown in FIG.
The procedure for connecting the electrodes to each other with a gold wire 48 will now be described. First, as shown in FIG. 1A, the discharge electrode 50 is moved to a position directly below the distal end opening 44, and a spherical body 58 is formed at the distal end of the gold wire 48 by the discharge action. I do. Along with the formation of the spherical body 58, a mixed gas is injected from the gas injection nozzle 60 to make the atmosphere of the mixed gas around the spherical body 58, so that the surface of the spherical body 58 is subjected to fluorination treatment.

【００３６】球状体５８の表面にフッ化処理を施した後
は、同図（２）に示すようにキャピラリ４２を下降さ
せ、電極２２に球状体５８を接続させる。ところでキャ
ピラリ４２の下降時では既に球状体５８の表面にはフッ
化処理がなされているので、混合ガスを連続して供給す
る必要が無いが、ガス噴射ノズル６０と電極２２とが接
近していくことから、電極２２側もフッ化処理させるべ
く、同図（２）に示すように混合ガスを連続供給するよ
うにしてもよい。After the surface of the spherical body 58 has been subjected to the fluorination treatment, the capillary 42 is lowered to connect the spherical body 58 to the electrode 22 as shown in FIG. By the way, when the capillary 42 is lowered, the surface of the spherical body 58 has already been fluorinated, so there is no need to continuously supply the mixed gas, but the gas injection nozzle 60 and the electrode 22 approach each other. Therefore, the mixed gas may be continuously supplied as shown in FIG.

【００３７】球状体５８を電極２２に接続させた後は、
同図（３）に示すようにキャピラリ４２を上昇させ先端
開口部４４より金ワイヤ４８を引き出す。この状態では
ガス噴射ノズル６０から混合ガスが吹き出されているの
で、金ワイヤ４８の表面にはフッ化処理がなされる。そ
して表面がフッ化処理された金ワイヤ４８をランド２４
に押し付け、接続後に図示しないクランパを稼働させ金
ワイヤ４８を把持するとともにキャピラリ４２を上昇さ
せれば、同図（４）に示すように、金ワイヤ４８はラン
ド２４との接合部分より切断され、基板１３側には電極
２２とランド２４とを接続する金ワイヤ４８がループ状
に形成される。またキャピラリ４２側においては、フッ
化処理を行う必要が無いためガス噴射ノズル６０より混
合ガスを噴射させるのを停止させればよい。After the spherical body 58 is connected to the electrode 22,
As shown in FIG. 3C, the capillary 42 is raised and the gold wire 48 is pulled out from the distal end opening 44. In this state, since the mixed gas is blown from the gas injection nozzle 60, the surface of the gold wire 48 is fluorinated. Then, the fluorinated gold wire 48 is connected to the land 24.
If the clamper (not shown) is operated to grip the gold wire 48 and raise the capillary 42 after the connection, the gold wire 48 is cut from the joint with the land 24 as shown in FIG. A gold wire 48 connecting the electrode 22 and the land 24 is formed in a loop on the substrate 13 side. On the capillary 42 side, since it is not necessary to perform the fluorination treatment, the injection of the mixed gas from the gas injection nozzle 60 may be stopped.

【００３８】このように同図（１）→（２）→（３）→
（４）の工程を電極２２の数量分だけ行うようにすれ
ば、ベアチップ１２と基板１３との接続を行うことが可
能になる。As described above, FIG. 1 (1) → (2) → (3) →
If the step (4) is performed for the number of the electrodes 22, the connection between the bare chip 12 and the substrate 13 can be performed.

【００３９】図３は、第２実施例で用いたボンディング
部２６を用いて、ベアチップ１２の電極２２部分に突起
（バンプ）を形成する手順を示した工程説明図である。
同図（１）と同図（２）で示す工程は、図２と同様であ
るため説明を省略する。フッ化処理された球状体５８を
電極２２に接続した後は、図示しないクランパを稼働さ
せ金ワイヤ４８を把持するとともにキャピラリ４２を上
昇させる。すると同図（３）に示すように、金ワイヤ４
８は、電極２２に接続された球状体５８の首下より切断
され、球状体５８はベアチップ１２側に残る。このため
同図（１）→（２）→（３）の工程をベアチップ１２上
の電極２２の数だけおこなっていけば、ベアチップ１２
上に突起（バンプ）６２を形成することができる。なお
同図では金ワイヤ４８側をフッ化処理することとした
が、この形態にこだわる必要もなく、ベアチップ１２側
にフッ化処理を施したり、あるいはその両方にフッ化処
理を施すようにしてもよい。FIG. 3 is a process explanatory view showing a procedure for forming a projection (bump) on the electrode 22 of the bare chip 12 using the bonding portion 26 used in the second embodiment.
The steps shown in FIGS. 1A and 1B are the same as those in FIG. 2 and will not be described. After connecting the fluorinated spherical body 58 to the electrode 22, a clamper (not shown) is operated to hold the gold wire 48 and raise the capillary 42. Then, as shown in FIG.
8 is cut from below the neck of the spherical body 58 connected to the electrode 22, and the spherical body 58 remains on the bare chip 12 side. Therefore, if the steps of (1) → (2) → (3) are performed by the number of electrodes 22 on the bare chip 12, the bare chip 12
A projection (bump) 62 can be formed thereon. Although the fluoridation process is performed on the gold wire 48 side in the same figure, it is not necessary to stick to this form. Good.

【００４０】そして上述した実施の形態では、ボンディ
ング用のワイヤとして金ワイヤ４８を用いることとした
が、この形態（材料）に限定される必要は無く、ワイヤ
の材質として銅あるいはアルミといったものも適用可能
であり、ワイヤの種類を限定しないことは言うまでもな
い。In the above-described embodiment, the gold wire 48 is used as the bonding wire. However, the present invention is not limited to this mode (material), and copper or aluminum may be used as the material of the wire. Needless to say, it is possible and does not limit the type of wire.

【００４１】また上述した実施の形態では、ハロゲンが
フッ素である場合について説明したが、ハロゲンは、接
合する相手の相性や表面状態により、塩素やヨウ素、臭
素などであってもよい。Further, in the above-described embodiment, the case where the halogen is fluorine has been described. However, the halogen may be chlorine, iodine, bromine, or the like depending on the compatibility of the mating partner and the surface state.

【００４２】[0042]

【発明の効果】以上に説明したように、本発明における
ワイヤボンディング方法および装置ならびにワイヤバン
プの形成方法によれば、超音波振動を加える必要が無く
なるので、隣合うワイヤ同士が接触するのを防止でき、
もってベアチップの狭ピッチ化に対応させることができ
る。また加熱といった諸条件を緩和させることができる
ことから、ダイボンディングに用いる接合材に低融点の
ものが使用できる。このため接合材の幅広い選定が可能
となる。As described above, according to the wire bonding method and apparatus and the wire bump forming method of the present invention, there is no need to apply ultrasonic vibration, so that contact between adjacent wires can be prevented. ,
Accordingly, it is possible to cope with the narrow pitch of the bare chips. Since various conditions such as heating can be relaxed, a bonding material having a low melting point can be used for the die bonding. This allows a wide selection of joining materials.

【００４３】さらに接続条件が緩和されることにより、
工程内での調整が簡単になるとともに確実な接続を行う
ことができる。By further relaxing the connection conditions,
Adjustment in the process is simplified, and reliable connection can be made.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本実施の形態に係るワイヤボンディング装置の
構成を示す構造説明図である。FIG. 1 is a structural explanatory view showing a configuration of a wire bonding apparatus according to the present embodiment.

【図２】第２実施例となる金ワイヤ４８の表面にフッ化
処理を施すための構成を示す説明図である。FIG. 2 is an explanatory view showing a configuration for performing a fluorination treatment on the surface of a gold wire 48 according to a second embodiment.

【図３】第２実施例で用いたボンディング部２６を用い
て、ベアチップ１２の電極２２部分に突起（バンプ）を
形成する手順を示した工程説明図である。FIG. 3 is a process explanatory view showing a procedure for forming a projection (bump) on an electrode 22 of a bare chip 12 by using a bonding portion 26 used in a second embodiment.

【符号の説明】[Explanation of symbols]

１０ ワイヤボンディング装置 １２ ベアチップ １３ 基板 １４ コンベア装置 １６ ストッカ １８ マガジンラック ２０ フッ化処理部 ２２ 電極 ２４ ランド ２６ ボンディング部 ２８ モールド封止部 ３０ 反応室 ３２ ＨＦガス供給部 ３４ 蒸気発生部 ３６ 配管 ３８ 配管 ４０ シャッタ ４２ キャピラリ ４４ 先端開口部 ４６ ボビン ４８ 金ワイヤ ５０ 放電電極 ５２ ツール駆動部 ５４ ノズル ５６ モールド ５８ 球状体 ６０ ガス噴射ノズル ６２ 突起（バンプ） DESCRIPTION OF SYMBOLS 10 Wire bonding apparatus 12 Bare chip 13 Substrate 14 Conveyor apparatus 16 Stocker 18 Magazine rack 20 Fluorination processing part 22 Electrode 24 Land 26 Bonding part 28 Mold sealing part 30 Reaction chamber 32 HF gas supply part 34 Steam generation part 36 Pipe 38 Pipe 40 Shutter 42 Capillary 44 Tip opening 46 Bobbin 48 Gold wire 50 Discharge electrode 52 Tool driving unit 54 Nozzle 56 Mold 58 Spherical body 60 Gas injection nozzle 62 Projection (bump)

───────────────────────────────────────────────────── フロントページの続き (72)発明者 青木 康次 長野県諏訪市大和３丁目３番５号 セイコ ーエプソン株式会社内 (72)発明者 水谷 誠吾 長野県諏訪市大和３丁目３番５号 セイコ ーエプソン株式会社内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Koji Aoki 3-5-5 Yamato, Suwa-shi, Nagano Seiko Epson Corporation (72) Inventor Seigo Mizutani 3-5-35 Yamato, Suwa-shi, Nagano Seikoー Epson Corporation

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 ベアチップの電極と外部電極とをワイヤ
にて加熱と加圧とをなしながら接続するワイヤボンディ
ング方法であって、前記電極側と前記ワイヤとの少なく
とも一方の表面をハロゲン化し、前記電極側と前記ワイ
ヤとをハロゲン化面を介して相互に接合させ固体接合を
なすことを特徴とするワイヤボンディング方法。1. A wire bonding method for connecting an electrode of a bare chip and an external electrode while heating and pressing with a wire, wherein at least one surface of the electrode side and the wire is halogenated. A wire bonding method, wherein an electrode side and the wire are bonded to each other via a halogenated surface to form a solid bond. 【請求項２】 基板搬送経路とワイヤ繰出経路を有した
配線接続部を持つワイヤボンディング装置であって、前
記基板搬送経路と前記ワイヤ繰出経路との少なくとも一
方の途中にハロゲン化処理部を設け、基板側に設けたベ
アチップの電極および外部電極と、前記ワイヤとの少な
くとも一方を前記ハロゲン化処理部を通過させることを
特徴とするワイヤボンディング装置。2. A wire bonding apparatus having a wiring connection portion having a substrate transfer path and a wire feed-out path, wherein a halogenation processing unit is provided in at least one of the substrate transfer path and the wire feed-out path. A wire bonding apparatus, wherein at least one of a bare chip electrode and an external electrode provided on a substrate side and the wire is passed through the halogenated portion. 【請求項３】 ワイヤを溶解させその先端に球状体を形
成するとともに、ベアチップの電極と前記球状体との少
なくとも一方の表面をハロゲン化し、前記電極と前記球
状体とをハロゲン化面を介して相互に接合させ固体接合
をなした後は、前記球状体と前記ワイヤとを切断分離
し、前記電極上に前記球状体を残留させたことを特徴と
するワイヤバンプの形成方法。3. A wire is melted to form a spherical body at its tip, and at least one surface of the bare chip electrode and the spherical body is halogenated, and the electrode and the spherical body are connected via a halogenated surface. A method for forming a wire bump, comprising: after joining together to form a solid joint, cutting and separating the spherical body and the wire and leaving the spherical body on the electrode.
JP4988098A 1998-03-02 1998-03-02 Wire bonding method and apparatus, and wire bump forming method Expired - Fee Related JP3551007B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4988098A JP3551007B2 (en) 1998-03-02 1998-03-02 Wire bonding method and apparatus, and wire bump forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4988098A JP3551007B2 (en) 1998-03-02 1998-03-02 Wire bonding method and apparatus, and wire bump forming method

Publications (2)

Publication Number Publication Date
JPH11251356A true JPH11251356A (en) 1999-09-17
JP3551007B2 JP3551007B2 (en) 2004-08-04

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2462822B (en) * 2008-08-18 2011-11-02 Crombie 123 Ltd Wire bonding
US8618420B2 (en) 2008-08-18 2013-12-31 Semblant Global Limited Apparatus with a wire bond and method of forming the same
US8995146B2 (en) 2010-02-23 2015-03-31 Semblant Limited Electrical assembly and method
US9055700B2 (en) 2008-08-18 2015-06-09 Semblant Limited Apparatus with a multi-layer coating and method of forming the same
US9648720B2 (en) 2007-02-19 2017-05-09 Semblant Global Limited Method for manufacturing printed circuit boards
US11786930B2 (en) 2016-12-13 2023-10-17 Hzo, Inc. Protective coating

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9648720B2 (en) 2007-02-19 2017-05-09 Semblant Global Limited Method for manufacturing printed circuit boards
GB2462822B (en) * 2008-08-18 2011-11-02 Crombie 123 Ltd Wire bonding
US8618420B2 (en) 2008-08-18 2013-12-31 Semblant Global Limited Apparatus with a wire bond and method of forming the same
US9055700B2 (en) 2008-08-18 2015-06-09 Semblant Limited Apparatus with a multi-layer coating and method of forming the same
US8995146B2 (en) 2010-02-23 2015-03-31 Semblant Limited Electrical assembly and method
US11786930B2 (en) 2016-12-13 2023-10-17 Hzo, Inc. Protective coating

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