JP2004319993A - Method of packaging electronic parts and its packaging equipment - Google Patents

Method of packaging electronic parts and its packaging equipment Download PDF

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JP2004319993A
JP2004319993A JP2004095797A JP2004095797A JP2004319993A JP 2004319993 A JP2004319993 A JP 2004319993A JP 2004095797 A JP2004095797 A JP 2004095797A JP 2004095797 A JP2004095797 A JP 2004095797A JP 2004319993 A JP2004319993 A JP 2004319993A
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electronic component
substrate
metal
metal terminal
mounting
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JP4288196B2 (en
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Masahiko Furuno
雅彦 古野
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Tamura Corp
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Tamura Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of packaging electronic parts and its packaging equipment which can solve various problems residing in a former halogenation processing method and a surface activation processing method by an energy wave irradiation. <P>SOLUTION: A substrate holding mechanism 22 for holding a substrate 21 is provided so as to be movable in a plane direction by a positioning mechanism 23 having an X-Y positioning stage. An electronic parts holding mechanism 25 for holding electronic parts 24 opposite to the substrate 21 is placed at a lower part of a load controlling mechanism 26. A wet processing mechanism 27 is placed in relation to the substrate 21 and the electronic parts 24. This wet processing mechanism 27 locates a treated liquid supplying portion 28 at one side of the electronic parts holding mechanism 25, and locates a treated liquid retrieving portion 30 for retrieving treated liquid 29 supplied from the treated liquid supplying portion 28 to the substrate 21 and a metal terminal of the electronic parts 24 at the other side of the electronic parts holding mechanism 25. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、電子部品を基板上に接合する電子部品の実装方法およびその実装装置に関する。   The present invention relates to an electronic component mounting method for bonding an electronic component on a substrate, and an apparatus for mounting the electronic component.

従来、電子部品を基板上に実装する方法として、はんだ粉末と融材などからなるソルダペーストをスクリーン印刷機により基板の電極上に転写し、マウンタにて電子部品の端子を、ソルダペーストが塗布された基板の電極上に搭載した後、リフロー炉にて加熱し、ソルダペーストを溶融するとともに、電子部品の端子と基板の電極間を電気的かつ機械的に接合する実装方法が、現在も電気・電子機器製品の製造に用いられている。   Conventionally, as a method of mounting electronic components on a board, solder paste consisting of solder powder and flux is transferred to the electrodes of the board by a screen printing machine, and the terminals of the electronic component are coated with solder paste by a mounter. After mounting it on the electrodes of the board, it is heated in a reflow furnace to melt the solder paste, and the electrical and mechanical bonding between the terminals of the electronic components and the electrodes of the board is still an electrical and mechanical method. Used in the manufacture of electronic equipment products.

一方、電子機器、半導体デバイスの小型化、高機能化のために接合部は微細化し、融材による電気的な損傷や熱歪による信頼性低下が問題となっている。   On the other hand, in order to reduce the size and function of electronic devices and semiconductor devices, the joints have been miniaturized, and there has been a problem of electrical damage due to the molten material and reduction in reliability due to thermal strain.

このような背景に基づき、融材を用いない実装方法や、加熱しない常温接合方法が提案されている。   Based on such a background, there have been proposed a mounting method that does not use a melting material and a room temperature bonding method that does not heat.

例えば融材を用いない実装方法としては、プラズマによるはんだ表面のハロゲン化処理による実装方法がある（例えば、特許文献１参照）。   For example, as a mounting method without using a flux, there is a mounting method by halogenating a solder surface by plasma (for example, see Patent Document 1).

また、加熱しない常温接合方法としては、接合面をエネルギ波照射により活性化した後に、常温にて接合する実装方法がある（例えば、特許文献２参照）。
特開２０００−１９００８５号公報（第３−４頁、図１） 特開２００１−３５１８９２号公報（第３−４頁、図１） Further, as a room temperature bonding method without heating, there is a mounting method in which a bonding surface is activated by energy wave irradiation and then bonded at room temperature (for example, see Patent Document 2).
JP-A-2000-190085 (page 3-4, FIG. 1) JP 2001-351892 A (page 3-4, FIG. 1)

上記の融材を用いないハロゲン化処理やエネルギ波照射による表面活性化処理による実装方法では、次のような問題がある。   The above-described mounting method using a halogen-free treatment or a surface activation treatment using energy wave irradiation without using a flux has the following problems.

先ず、ハロゲン化処理に関する特許文献１の方法では、融材を使用しない実装方法として発明の内容が開示されているが、プラズマにより励起されたハロゲンは強い活性を有する。   First, in the method of Patent Document 1 relating to the halogenation treatment, the content of the invention is disclosed as a mounting method that does not use a melting material, but halogen excited by plasma has strong activity.

すなわち、ハロゲン類の塩素は強い腐蝕性を持つために、装置の気密性や排ガスの処理など留意すべき点が多く、毒性の高いガスの使用は問題がある。   That is, since chlorine such as halogens has strong corrosiveness, there are many points to be considered such as airtightness of the apparatus and treatment of exhaust gas, and there is a problem in using highly toxic gas.

また、特許文献１には、ＣＦ４ガスの使用が記載されているが、ＣＦ４やＳＦ６などのガスは地球温暖化係数が非常に大きく、また非常に安定なガスであるために、その排ガス処理は地球環境保護の上で必須であり、コストの高い実装方法となる。 Patent Document 1 discloses the use of CF 4 gas. However, gases such as CF 4 and SF 6 have a very large global warming potential and are very stable gases. Exhaust gas treatment is indispensable for protecting the global environment, and is a costly mounting method.

さらに、ハロゲン類は、接合後の電気的信頼性を損なうために、洗浄工程が必須とされる。また、加熱を必要とし、部品の損傷を抑えるためには長時間の荷重印加が必要であり、生産効率が悪い。   Further, a cleaning step is essential for halogens in order to impair electrical reliability after bonding. In addition, heating is required, and long-term load application is required to suppress damage to components, resulting in poor production efficiency.

一方、特許文献２に記載の方法は、接合金属表面に対するエネルギ波照射による清浄化で酸化物や不純物を除去するとともに、接合金属表面を活性化させることで、加熱することなしに金属端子部分を拡散接合させる技術に基づくものである。   On the other hand, the method described in Patent Document 2 removes oxides and impurities by cleaning the joining metal surface by irradiating an energy wave, and activates the joining metal surface so that the metal terminal portion can be heated without heating. This is based on a diffusion bonding technique.

しかし、この方法は、基本的に電極部分を塑性変形させないため、電子部品に設けられた端子表面と基板側の端子表面とが平滑かつコプラナリティがない状態を必要とし、その制御は非常に困難を極める。   However, this method basically does not plastically deform the electrode portion, so that the surface of the terminal provided on the electronic component and the surface of the terminal on the substrate side need to be in a state without coplanarity, and the control is very difficult. Master.

さらに、エネルギ波照射には真空処理技術を用いる点から、コストの高い装置が必要となり、汎用的ではない。   Furthermore, since energy wave irradiation uses a vacuum processing technique, a high-cost apparatus is required and is not versatile.

また、接合材料も非加熱では金に限られ、銅との接合には加熱を必要とする。さらに、軟質はんだ合金には適用できない。   Further, the bonding material is also limited to gold when not heated, and heating is required for bonding with copper. Furthermore, it cannot be applied to soft solder alloys.

本発明は、このような点に鑑みなされたもので、従来のハロゲン化処理方法やエネルギ波照射による表面活性化処理方法が抱えていた種々の問題を解決できる電子部品の実装方法およびその実装装置を提供することを目的とするものである。   The present invention has been made in view of the above points, and an electronic component mounting method and an electronic component mounting apparatus capable of solving various problems of the conventional halogenation processing method and surface activation processing method using energy wave irradiation. The purpose is to provide.

請求項１に記載された発明は、電子部品の電極部に形成された金属端子と、電子部品を搭載する基板に形成された金属端子とを湿式処理して、これらの金属端子の表面の酸化物を除去し、次いで電子部品の金属端子と基板の金属端子とを突合せて荷重を印加することで、これらの金属端子を固相拡散により金属接合する電子部品の実装方法であり、接合を妨げる金属端子の表面の酸化物を湿式処理により除去した後に、電子部品および基板の各金属端子を突合せて荷重を印加することで、固相拡散により、融材を使用せずかつ加熱する必要のない金属接合が可能となり、従来のハロゲン化処理方法やエネルギ波照射による表面活性化処理方法が抱えていた種々の問題を解決できる。   According to the first aspect of the present invention, a metal terminal formed on an electrode portion of an electronic component and a metal terminal formed on a substrate on which the electronic component is mounted are wet-processed to oxidize the surface of the metal terminal. This is a method of mounting an electronic component in which a metal terminal of an electronic component and a metal terminal of a substrate are abutted against each other and a load is applied to the metal terminal, and the metal terminal is bonded to the metal terminal by solid-phase diffusion. After removing the oxide on the surface of the metal terminal by wet treatment, the metal terminals of the electronic component and the substrate are butt-connected and a load is applied, so that the solid-phase diffusion eliminates the use of a melting material and does not require heating. Metal bonding becomes possible, and various problems encountered in the conventional halogenation treatment method and surface activation treatment method by energy wave irradiation can be solved.

請求項２に記載された発明は、請求項１記載の電子部品の実装方法により金属接合される電子部品の金属端子および基板の金属端子の少なくとも一方が、突起状に形成されたものであり、少なくとも一方が突起状に形成された電子部品および基板の各金属端子を突合せて荷重を印加したので、塑性変形により金属端子間の高い接合信頼性が得られる。   According to a second aspect of the present invention, at least one of the metal terminal of the electronic component and the metal terminal of the substrate to be metal-joined by the electronic component mounting method according to the first aspect is formed in a projecting shape. Since a load is applied by abutting the metal terminals of the electronic component and the substrate, at least one of which is formed in a protruding shape, high bonding reliability between the metal terminals can be obtained by plastic deformation.

請求項３に記載された発明は、請求項１または２記載の電子部品の実装方法により金属接合される電子部品の金属端子および基板の金属端子の少なくとも一方が、軟質はんだ合金と、錫、鉛、インジウム、インジウム合金などの低剛性金属との中の少なくともいずれかから選択されたものであり、電子部品および基板の各金属端子の少なくとも一方が、軟質はんだ合金や、錫、鉛、インジウム、インジウム合金などの低剛性金属の場合は、接合を妨げる金属端子の表面の酸化物を湿式処理により除去した後に、電子部品および基板の金属端子を突合せて荷重を印加することで、固相拡散による金属接合を確実にできる。   According to a third aspect of the present invention, at least one of the metal terminal of the electronic component and the metal terminal of the substrate to be metal-joined by the electronic component mounting method according to the first or second aspect is made of a soft solder alloy, tin, or lead. , Indium, at least one of low-rigidity metals such as indium alloys, and at least one of each metal terminal of the electronic component and the substrate is a soft solder alloy, tin, lead, indium, indium. In the case of low-rigidity metals such as alloys, after removing the oxide on the surface of the metal terminals that hinder bonding by wet processing, the metal terminals of the electronic component and the board are butted and a load is applied, so that the metal by solid-phase diffusion Bonding can be ensured.

請求項４に記載された発明は、請求項１乃至３のいずれか記載の電子部品の実装方法における湿式処理が、無機酸の溶液、有機酸の溶液および還元性作用を有する塩の溶解液の中の少なくともいずれかから選択された処理液でなされるものであり、無機酸の溶液、有機酸の溶液および還元性作用を有する塩の溶解液の中の少なくともいずれかから選択された処理液でなされる湿式処理により、金属端子の表面の酸化物を確実に除去できる。   According to a fourth aspect of the present invention, in the method of mounting an electronic component according to any one of the first to third aspects, the wet treatment is performed by using a solution of an inorganic acid, a solution of an organic acid, and a solution of a salt having a reducing action. And a treatment solution selected from at least one of a solution of an inorganic acid, a solution of an organic acid and a solution of a salt having a reducing action. Oxidation on the surface of the metal terminal can be reliably removed by the wet treatment performed.

請求項５に記載された発明は、請求項１乃至３のいずれか記載の電子部品の実装方法における湿式処理が、無機酸の溶液、有機酸の溶液および還元性作用を有する塩の溶解液の中の少なくともいずれかから選択された処理液でなされ、次いで有機溶剤で洗浄・置換がなされるものであり、湿式処理において、酸化物除去処理された金属端子の表面を、さらに予め有機溶剤で洗浄・置換することで、後洗浄が不要となり、洗浄槽を設置する必要がない。   According to a fifth aspect of the present invention, in the method of mounting an electronic component according to any one of the first to third aspects, the wet treatment is performed by using a solution of an inorganic acid, a solution of an organic acid, and a solution of a salt having a reducing action. The cleaning is performed with a processing liquid selected from at least one of the following, followed by cleaning and replacement with an organic solvent.In wet processing, the surface of the metal terminal that has been subjected to oxide removal processing is further cleaned with an organic solvent in advance. -By replacement, post-cleaning becomes unnecessary, and there is no need to install a cleaning tank.

請求項６に記載された発明は、請求項１乃至５のいずれか記載の電子部品の実装方法における金属接合時に、金属端子を非加熱もしくは融点以上に加熱しない実装方法であり、金属端子を非加熱もしくは融点以上に加熱しないので、熱歪による信頼性低下を防止できる。   The invention described in claim 6 is a mounting method in which the metal terminal is not heated or heated to a melting point or higher at the time of metal bonding in the electronic component mounting method according to any one of claims 1 to 5. Since heating is not performed or the temperature is not higher than the melting point, a decrease in reliability due to thermal strain can be prevented.

請求項７に記載された発明は、請求項１乃至６のいずれか記載の電子部品の実装方法における金属接合が、非融材状態でなされる実装方法であり、金属接合が、非融材状態でなされることで、融材による電気的な損傷を防止できる。   According to a seventh aspect of the present invention, in the electronic component mounting method according to any one of the first to sixth aspects, the metal bonding is performed in a non-fusible material state, and the metal bonding is performed in a non-fusible material state. By doing so, it is possible to prevent electrical damage due to the flux.

請求項８に記載された発明は、請求項１乃至７のいずれか記載の電子部品の実装方法によって金属接合した後に、電子部品と基板との隙間にアンダーフィル材を充填する工程を有する実装方法であり、電子部品実装後に電子部品と基板との隙間にアンダーフィル材を充填するので、電子部品実装前にアンダーフィル材を塗布する方法より、電子部品と基板の金属端子間へのアンダーフィル材の噛み込みを防止でき、高い接合信頼性を確保できる。   According to an eighth aspect of the present invention, there is provided a mounting method comprising a step of filling a gap between an electronic component and a substrate with an underfill material after metal-joining by the electronic component mounting method according to any one of the first to seventh aspects. Since the underfill material is filled into the gap between the electronic component and the board after mounting the electronic component, the underfill material between the electronic component and the metal terminal of the board is less than the method of applying the underfill material before mounting the electronic component. Biting can be prevented, and high joining reliability can be secured.

請求項９に記載された発明は、請求項１乃至８のいずれか記載の電子部品の実装方法における電子部品および基板の少なくとも一方が、有機材料、セラミックス材料、半導体材料、これらの複合体の中の少なくともいずれかから選択された実装方法であり、電子部品および基板の少なくとも一方が、有機材料、セラミックス材料、半導体材料、これらの複合体のいずれであっても、これらの電子部品および基板の各金属端子間の固相拡散による金属間結合が可能である。   According to a ninth aspect of the present invention, in the electronic component mounting method according to any one of the first to eighth aspects, at least one of the electronic component and the substrate is formed of an organic material, a ceramic material, a semiconductor material, or a composite thereof. A mounting method selected from at least one of the following, wherein at least one of the electronic component and the substrate is an organic material, a ceramic material, a semiconductor material, or any of these composites, Intermetallic bonding by solid phase diffusion between metal terminals is possible.

請求項１０に記載された発明は、電子部品を保持する電子部品保持機構と、電子部品を搭載する基板を保持する基板保持機構と、電子部品の電極部に形成された金属端子と基板に形成された金属端子とを位置決めする位置決め機構と、電子部品および基板の各金属端子の表面の酸化物を湿式処理で除去する湿式処理機構と、基板に対し相対的に鉛直方向にのみ移動して電子部品および基板の各金属端子間に荷重を印加するとともにその荷重を制御して電子部品および基板の各金属端子を固相拡散により金属接合する荷重制御機構とを具備した電子部品の実装装置であり、電子部品保持機構により電子部品を保持するとともに、基板保持機構により基板を保持し、位置決め機構により電子部品および基板の各金属端子を位置決めし、湿式処理機構により、電子部品および基板の各金属端子の表面の酸化物を湿式処理で除去し、荷重制御機構により、基板に対し電子部品を相対的に鉛直方向にのみ移動して電子部品および基板の各金属端子間に荷重を印加するとともに、その荷重を制御して電子部品および基板の各金属端子を金属接合するので、特に、基板に対し電子部品を相対的に鉛直方向にのみ移動して荷重を制御することで、固相拡散を十分に促進させ、融材の使用や加熱の必要がなく、電気的信頼性を確保できるとともに、熱歪による電子部品の信頼性低下を防ぐことができる。また一方向への荷重印加であるため、金属端子間の機械的強度の劣化や非接触または接触不良を防止することができる。   According to a tenth aspect of the present invention, there is provided an electronic component holding mechanism for holding an electronic component, a substrate holding mechanism for holding a substrate on which the electronic component is mounted, and a metal terminal formed on an electrode portion of the electronic component and formed on the substrate. A positioning mechanism for positioning the metal terminals, a wet processing mechanism for removing oxides on the surfaces of the metal terminals of the electronic components and the substrate by a wet processing, and an electron moving only in a vertical direction relative to the substrate. An electronic component mounting apparatus comprising: a load control mechanism that applies a load between metal terminals of a component and a substrate and controls the load to bond the metal terminals of the electronic component and the substrate to each other by solid-phase diffusion. A wet processing machine that holds an electronic component by an electronic component holding mechanism, holds a substrate by a substrate holding mechanism, and positions each metal terminal of the electronic component and the substrate by a positioning mechanism. The oxide on the surface of each metal terminal of the electronic component and the substrate is removed by a wet process, and the load control mechanism moves the electronic component relative to the substrate only in the vertical direction so that each metal of the electronic component and the substrate is removed. Since a load is applied between the terminals and the load is controlled to metal-join the metal terminals of the electronic component and the board, the load is controlled by moving the electronic component only vertically relative to the board. By doing so, solid-phase diffusion is sufficiently promoted, and there is no need to use or heat a flux, electrical reliability can be secured, and a decrease in the reliability of electronic components due to thermal strain can be prevented. Further, since the load is applied in one direction, it is possible to prevent the mechanical strength between the metal terminals from deteriorating, or preventing non-contact or poor contact.

請求項１１に記載された発明は、請求項１０記載の電子部品の実装装置における湿式処理機構が、電子部品保持機構の一側に配置され電子部品および基板の金属端子に向って処理液を供給する処理液供給部と、電子部品保持機構の他側に配置され電子部品および基板の金属端子を経た余剰の処理液を回収する処理液回収部とを具備した実装装置であり、電子部品保持機構を介して処理液供給部と処理液回収部とを配置したので、湿式処理をした後に直ちに金属接合工程に入ることができ、生産効率を向上できる。   According to an eleventh aspect of the present invention, in the electronic component mounting apparatus according to the tenth aspect, the wet processing mechanism is disposed on one side of the electronic component holding mechanism and supplies the processing liquid toward the electronic component and the metal terminal of the substrate. And a processing liquid collecting unit disposed on the other side of the electronic component holding mechanism and collecting an excessive processing liquid that has passed through metal terminals of the electronic component and the substrate. Since the processing liquid supply unit and the processing liquid recovery unit are arranged via the interface, the metal bonding step can be started immediately after the wet processing, and the production efficiency can be improved.

請求項１２に記載された発明は、請求項１０または１１記載の電子部品の実装装置における湿式処理機構が、処理液で金属端子の表面の酸化物を湿式処理して除去した後に有機溶剤で洗浄・置換するものであり、位置決め機構が、有機溶剤の存在下で電子部品の金属端子と基板の金属端子とを位置決めするものであり、荷重制御機構が、有機溶剤の存在下で電子部品および基板の各金属端子間に印加される荷重を制御するものであるとした実装装置であり、湿式処理機構が、処理液による酸化膜除去と、有機溶剤による処理液の洗浄・置換とを、部品搭載部以外でも行えるもので、次いで位置決め機構および荷重制御機構により有機溶剤の存在下での金属接合工程に入ることが可能であり、処理液の接合後の後洗浄が不要となる。   According to a twelfth aspect of the present invention, in the electronic component mounting apparatus according to the tenth or eleventh aspect, the wet processing mechanism removes the oxide on the surface of the metal terminal by a wet processing with a processing liquid and then cleans with an organic solvent. A replacement mechanism, wherein the positioning mechanism positions the metal terminal of the electronic component and the metal terminal of the board in the presence of the organic solvent, and the load control mechanism controls the electronic component and the board in the presence of the organic solvent. This is a mounting device that controls the load applied between each metal terminal of the above.The wet processing mechanism uses the processing liquid to remove the oxide film and the organic solvent to clean and replace the processing liquid. Since it can be performed in other parts, the metal joining step in the presence of the organic solvent can be started by the positioning mechanism and the load control mechanism, and post-cleaning after the joining of the processing liquid is unnecessary.

請求項１記載の発明によれば、接合を妨げる金属端子の表面の酸化物を湿式処理により除去した後に、電子部品および基板の各金属端子を突合せて荷重を印加することで、固相拡散により、融材を使用せずかつ加熱する必要のない金属接合が可能となり、従来のハロゲン化処理方法やエネルギ波照射による表面活性化処理方法が抱えていた種々の問題を解決できる。例えば、強い活性を有する場合の問題点、地球環境保護の上でコスト高となる点、洗浄工程を必要とする点、生産効率が悪い点、制御が困難である点、コストの高い装置を必要とし汎用的でない点、接合材料が金に限られる点などを解決できる。   According to the first aspect of the present invention, after removing the oxide on the surface of the metal terminal that hinders the bonding by wet processing, the metal terminals of the electronic component and the substrate are butted and a load is applied, whereby solid-phase diffusion is achieved. In addition, it is possible to perform metal bonding without using a melting material and without heating, and can solve various problems of the conventional halogenation method and surface activation method using energy wave irradiation. For example, problems with strong activity, high cost in protecting the global environment, need for cleaning process, poor production efficiency, difficult control, need expensive equipment It is possible to solve the problem that it is not general-purpose and that the joining material is limited to gold.

請求項２記載の発明によれば、少なくとも一方が突起状に形成された電子部品および基板の各金属端子を突合せて荷重を印加したので、塑性変形により金属端子間の高い接合信頼性が得られる。   According to the second aspect of the present invention, since a load is applied by abutting the metal terminals of the electronic component and the substrate, at least one of which is formed in a protruding shape, high bonding reliability between the metal terminals can be obtained by plastic deformation. .

請求項３記載の発明によれば、電子部品および基板の各金属端子の少なくとも一方が、軟質はんだ合金や、錫、鉛、インジウム、インジウム合金などの低剛性金属の場合は、接合を妨げる金属端子の表面の酸化物を湿式処理により除去した後に、電子部品および基板の金属端子を突合せて荷重を印加することで、固相拡散による金属接合を確実にできる。   According to the third aspect of the present invention, when at least one of the metal terminals of the electronic component and the substrate is made of a soft solder alloy or a low-rigidity metal such as tin, lead, indium, or an indium alloy, the metal terminal that prevents the bonding is provided. After the oxide on the surface of the substrate is removed by wet processing, the metal terminals of the electronic component and the substrate are butted and a load is applied, so that metal bonding by solid-phase diffusion can be ensured.

請求項４記載の発明によれば、無機酸の溶液、有機酸の溶液および還元性作用を有する塩の溶解液の中の少なくともいずれかから選択された処理液でなされる湿式処理により、金属端子の表面の酸化物を確実に除去できる。   According to the invention as set forth in claim 4, the metal terminal is formed by wet processing performed with a processing solution selected from at least one of a solution of an inorganic acid, a solution of an organic acid, and a solution of a salt having a reducing action. Can reliably remove oxides on the surface.

請求項５記載の発明によれば、湿式処理において、酸化物除去処理された金属端子の表面を、さらに予め有機溶剤で洗浄・置換することで、後洗浄を不要とすることができ、洗浄槽を省略できる。   According to the fifth aspect of the present invention, in the wet processing, the surface of the metal terminal subjected to the oxide removal processing is further cleaned and replaced with an organic solvent in advance, so that the post-cleaning can be omitted, and the cleaning tank can be eliminated. Can be omitted.

請求項６記載の発明によれば、金属端子を非加熱もしくは融点以上に加熱しないので、熱歪による信頼性低下を防止できる。   According to the sixth aspect of the present invention, since the metal terminal is not heated or is not heated to the melting point or more, it is possible to prevent a decrease in reliability due to thermal strain.

請求項７記載の発明によれば、金属接合が、非融材状態でなされることで、融材による電気的な損傷を防止できる。   According to the seventh aspect of the invention, since the metal joining is performed in a non-fused state, electrical damage due to the fused material can be prevented.

請求項８記載の発明によれば、電子部品実装後に電子部品と基板との隙間にアンダーフィル材を充填するので、電子部品実装前にアンダーフィル材を塗布する方法より、電子部品と基板の金属端子間へのアンダーフィル材の噛み込みを防止でき、高い接合信頼性を確保できる。   According to the invention described in claim 8, the gap between the electronic component and the substrate is filled with the underfill material after the electronic component is mounted. The underfill material can be prevented from being caught between the terminals, and high bonding reliability can be secured.

請求項９記載の発明によれば、電子部品および基板の少なくとも一方が、有機材料、セラミックス材料、半導体材料、これらの複合体のいずれであっても、これらの電子部品および基板の各金属端子間の固相拡散による金属間結合が可能である。   According to the ninth aspect of the present invention, regardless of whether at least one of the electronic component and the substrate is an organic material, a ceramic material, a semiconductor material, or a composite thereof, the electronic component and the substrate have a metal terminal. Intermetallic bonding by solid-phase diffusion of is possible.

請求項１０記載の発明によれば、電子部品保持機構により電子部品を保持するとともに、基板保持機構により基板を保持し、位置決め機構により電子部品および基板の各金属端子を位置決めし、湿式処理機構により、電子部品および基板の各金属端子の表面の酸化物を湿式処理で除去し、荷重制御機構により、基板に対し電子部品を相対的に鉛直方向にのみ移動して電子部品および基板の各金属端子間に荷重を印加するとともに、その荷重を制御して電子部品および基板の各金属端子を金属接合するので、特に、基板に対し電子部品を相対的に鉛直方向にのみ移動して荷重を制御することで、固相拡散を十分に促進させ、融材の使用や加熱の必要がなく、電気的信頼性を確保できるとともに、熱歪による電子部品の信頼性低下を防ぐことができる。また一方向への荷重印加であるため、金属端子間の機械的強度の劣化や非接触または接触不良を防止することができる。   According to the tenth aspect of the present invention, the electronic component is held by the electronic component holding mechanism, the substrate is held by the substrate holding mechanism, the metal terminals of the electronic component and the board are positioned by the positioning mechanism, and the wet processing mechanism is used by the wet processing mechanism. The oxide on the surface of each metal terminal of the electronic component and the substrate is removed by wet processing, and the load control mechanism moves the electronic component only in the vertical direction relative to the substrate so that each metal terminal of the electronic component and the substrate is removed. In addition to applying a load between them and controlling the load to metal-join the metal terminals of the electronic component and the substrate, the electronic component is moved relative to the substrate only in the vertical direction, and the load is controlled. As a result, the solid phase diffusion is sufficiently promoted, there is no need to use a melting material or heating, and the electrical reliability can be secured, and the reliability of electronic components can be prevented from deteriorating due to thermal strain. That. Further, since the load is applied in one direction, it is possible to prevent the mechanical strength between the metal terminals from deteriorating, or preventing non-contact or poor contact.

請求項１１記載の発明によれば、電子部品保持機構を介して処理液供給部と処理液回収部とを配置したので、湿式処理をした後に直ちに金属接合工程に入ることができ、生産効率を向上できる。   According to the eleventh aspect of the present invention, since the processing liquid supply unit and the processing liquid recovery unit are arranged via the electronic component holding mechanism, the metal bonding step can be started immediately after the wet processing, and the production efficiency can be reduced. Can be improved.

請求項１２記載の発明によれば、湿式処理機構の処理液による酸化膜除去後に、処理液が有機溶剤により洗浄・置換されるので、再酸化を防ぎ、直ちに位置決め機構および荷重制御機構により有機溶剤の存在下での金属接合工程に入ることができ、かつ処理液の接合後の後洗浄を不要にできる。   According to the twelfth aspect of the present invention, since the processing solution is washed and replaced by the organic solvent after removing the oxide film by the processing solution in the wet processing mechanism, reoxidation is prevented, and the organic solvent is immediately controlled by the positioning mechanism and the load control mechanism. Can be entered into the metal bonding step in the presence of the metal, and post-cleaning after the bonding of the processing liquid can be eliminated.

以下、本発明を図１乃至図３に示された一実施の形態を参照しながら詳細に説明する。   Hereinafter, the present invention will be described in detail with reference to one embodiment shown in FIGS.

図２は、電子部品を基板に実装するための一連の電子部品実装関連設備を示し、電子部品および基板を湿式処理するための処理液を収容した処理液槽11と、隔離ゲート12と、電子部品を基板に実装するための電子部品実装装置13と、隔離ゲート14と、電子部品および基板に残留した処理液を洗浄除去するための洗浄槽15と、電子部品および基板を乾燥させるための乾燥機16とが、連続的に配置されている。   FIG. 2 shows a series of electronic component mounting-related equipment for mounting electronic components on a substrate, and includes a processing liquid tank 11 containing a processing liquid for wet-processing the electronic components and the substrate, an isolation gate 12, An electronic component mounting apparatus 13 for mounting components on a substrate, an isolation gate 14, a cleaning tank 15 for cleaning and removing a processing liquid remaining on the electronic components and the substrate, and a drying unit for drying the electronic components and the substrate. Machines 16 are continuously arranged.

処理液槽11と電子部品実装装置13との間、電子部品実装装置13と洗浄槽15との間、洗浄槽15と乾燥機16との間には、電子部品および基板を移設するための搬送機構（図示せず）が設置されている。   Transfer between the processing liquid tank 11 and the electronic component mounting apparatus 13, between the electronic component mounting apparatus 13 and the cleaning tank 15, and between the cleaning tank 15 and the dryer 16 for transferring electronic components and substrates. A mechanism (not shown) is provided.

電子部品実装装置13には、電子部品と基板とを位置決めするための位置決め機構23が設置され、この位置決め機構23に対して、処理液と洗浄液とを供給するので、この位置決め機構23には、処理液槽11に処理液を戻す循環機構（図示せず）と、洗浄槽15に洗浄液を戻す循環機構（図示せず）とがそれぞれ設けられている。   The electronic component mounting apparatus 13 is provided with a positioning mechanism 23 for positioning the electronic component and the substrate, and supplies a processing liquid and a cleaning liquid to the positioning mechanism 23. A circulation mechanism (not shown) for returning the processing liquid to the processing liquid tank 11 and a circulation mechanism (not shown) for returning the cleaning liquid to the cleaning tank 15 are provided.

隔離ゲート12，14は、処理液槽11と洗浄槽15との間で、処理液および洗浄液が相互に混入することを防止するもので、位置決め機構23に処理液が供給されるときは隔離ゲート14が閉じられ、位置決め機構23に洗浄液が供給されるときは隔離ゲート12が閉じられる。   The isolation gates 12 and 14 prevent the processing liquid and the cleaning liquid from being mixed with each other between the processing liquid tank 11 and the cleaning tank 15. When the processing liquid is supplied to the positioning mechanism 23, the isolation gates 12 and 14 are provided. When the cleaning liquid is supplied to the positioning mechanism 23, the isolation gate 12 is closed.

乾燥機16は、加熱式でも、減圧式でも良い。   The dryer 16 may be a heating type or a decompression type.

図１は、電子部品実装装置13を示し、基板21を保持する基板保持機構22が、Ｘ−Ｙ位置決めステージを有する位置決め機構23により、平面方向すなわちＸ−Ｙ方向へ移動可能に設けられている。   FIG. 1 shows an electronic component mounting apparatus 13 in which a board holding mechanism 22 for holding a board 21 is provided by a positioning mechanism 23 having an XY positioning stage so as to be movable in a plane direction, that is, an XY direction. .

この基板21に対向させて電子部品24を保持する電子部品保持機構25が、荷重制御機構26の下部に設置されている。   An electronic component holding mechanism 25 that holds the electronic component 24 facing the substrate 21 is provided below the load control mechanism 26.

基板21および電子部品24に対して湿式処理機構27が設置されている。この湿式処理機構27は、電子部品保持機構25の一側に処理液供給部28が配置され、電子部品保持機構25の他側に、処理液供給部28から基板21および電子部品24の金属端子に供給されこれらを経た余剰の処理液29を回収する処理液回収部30が配置されている。   A wet processing mechanism 27 is provided for the substrate 21 and the electronic components 24. The wet processing mechanism 27 includes a processing liquid supply unit 28 disposed on one side of the electronic component holding mechanism 25, and a metal terminal of the substrate 21 and the electronic component 24 from the processing liquid supply unit 28 on the other side of the electronic component holding mechanism 25. A processing liquid collecting unit 30 is provided for collecting the surplus processing liquid 29 supplied to and passing through these.

位置決め機構23は、図３（ａ）に示されるように電子部品24の電極部に形成された金属端子24aと、この電子部品24を搭載する基板21に形成された金属端子21aとを位置決めするものである。   The positioning mechanism 23 positions the metal terminal 24a formed on the electrode part of the electronic component 24 and the metal terminal 21a formed on the substrate 21 on which the electronic component 24 is mounted, as shown in FIG. Things.

荷重制御機構26は、図３（ｂ）に示されるように基板21に対し電子部品24を相対的に鉛直方向にのみ移動して、位置決めされた電子部品24の金属端子24aと基板21の金属端子21aとの間に鉛直方向のみの荷重を印加するとともに、その荷重を制御して電子部品24の金属端子24aと基板21の金属端子21aとを金属接合するものである。   The load control mechanism 26 moves the electronic component 24 only in the vertical direction relatively to the board 21 as shown in FIG. 3B, and the metal terminal 24a of the positioned electronic component 24 and the metal of the board 21 are moved. A load only in the vertical direction is applied to the terminal 21a, and the load is controlled to metal-join the metal terminal 24a of the electronic component 24 and the metal terminal 21a of the board 21.

湿式処理機構27は、図３（ａ）に示されるように対向配置された基板21および電子部品24の金属端子21a，24aの表面の酸化物を湿式処理で除去するものである。   The wet processing mechanism 27 removes oxides on the surfaces of the metal terminals 21a and 24a of the substrate 21 and the electronic component 24 facing each other by wet processing as shown in FIG.

なお、湿式処理機構27の処理液供給部28および処理液回収部30は、洗浄液を供給する洗浄液供給部および洗浄液を洗浄槽15に回収する洗浄液回収部を兼ねても良いし、洗浄液供給部および洗浄液回収部は別途設けても良い。   Note that the processing liquid supply unit 28 and the processing liquid recovery unit 30 of the wet processing mechanism 27 may also serve as a cleaning liquid supply unit that supplies a cleaning liquid and a cleaning liquid collection unit that collects the cleaning liquid in the cleaning tank 15, or a cleaning liquid supply unit and a cleaning liquid supply unit. The washing liquid collecting section may be provided separately.

また、湿式処理機構27は、処理液による酸化膜除去と、有機溶剤による処理液の洗浄・置換とを、部品搭載部以外でも行えるようにすると良く、処理液で金属端子21a，24aの表面の酸化物を湿式処理して除去した後に、酢酸エチルなどの有機溶剤で処理液を洗浄・置換すると良い。   Further, the wet processing mechanism 27 should preferably be capable of removing the oxide film with the processing liquid and cleaning / replacement of the processing liquid with the organic solvent even in a part other than the component mounting portion. The processing liquid may be used to remove the surface of the metal terminals 21a and 24a. After removing the oxides by wet treatment, the treatment liquid is preferably washed and replaced with an organic solvent such as ethyl acetate.

この場合、位置決め機構23は、有機溶剤の存在下で電子部品24の金属端子24aと基板21の金属端子21aとを位置決めするものであり、また、荷重制御機構26は、有機溶剤の存在下で電子部品24および基板21の各金属端子24a，21a間に印加される荷重を制御するものである。   In this case, the positioning mechanism 23 is for positioning the metal terminal 24a of the electronic component 24 and the metal terminal 21a of the board 21 in the presence of the organic solvent, and the load control mechanism 26 is for positioning the metal terminal 24a in the presence of the organic solvent. It controls the load applied between the metal terminals 24a, 21a of the electronic component 24 and the substrate 21.

この実装装置で取扱われる基板21および電子部品24の少なくとも一方は、有機材料、セラミックス材料、半導体材料、これらの複合体の中の少なくともいずれかから選択されたものである。   At least one of the substrate 21 and the electronic component 24 handled by this mounting apparatus is selected from at least one of an organic material, a ceramic material, a semiconductor material, and a composite thereof.

電子部品24には、半導体デバイスだけでなく、回路形成されたサブアッセンブリ基板も含まれる。   The electronic components 24 include not only semiconductor devices but also sub-assembly substrates on which circuits are formed.

また、金属接合される電子部品24の金属端子24aおよび基板21の金属端子21aは、突起状に形成されたバンプであり、これらの金属接合される金属端子24a，21aの少なくとも一方は、軟質はんだ合金と、錫、鉛、インジウム、インジウム合金などの低剛性金属との中の少なくともいずれかから選択されたものである。   The metal terminal 24a of the electronic component 24 to be metal-joined and the metal terminal 21a of the substrate 21 are bumps formed in a protruding shape, and at least one of the metal terminals 24a, 21a to be metal-joined is a soft solder. It is selected from at least one of an alloy and a low-rigidity metal such as tin, lead, indium, and indium alloy.

次に、このような電子部品の実装装置を用いて行う電子部品の実装方法を説明する。   Next, a method of mounting an electronic component using such an electronic component mounting apparatus will be described.

先ず、図１に示された電子部品保持機構25により電子部品24を保持するとともに、基板保持機構22により基板21を保持し、位置決め機構23により、図３（ａ）に示されるように電子部品24の電極部に形成された金属端子24aと、基板21に形成された金属端子21aとの水平方向の位置決めをし、湿式処理機構27の処理液供給部28から基板21および電子部品24の金属端子21a，24aに処理液を供給しながら、余剰の処理液29を処理液回収部30で回収することにより、基板21および電子部品24の金属端子21a，24aの表面を湿式処理して、これらの金属端子21a，24aの表面の酸化物を除去する。   First, the electronic component 24 is held by the electronic component holding mechanism 25 shown in FIG. 1, the board 21 is held by the board holding mechanism 22, and the electronic component is held by the positioning mechanism 23 as shown in FIG. The metal terminals 24a formed on the electrode portions of the substrate 24 and the metal terminals 21a formed on the substrate 21 are positioned in the horizontal direction, and the processing liquid supply unit 28 of the wet processing mechanism 27 transfers the metal The surplus processing liquid 29 is recovered by the processing liquid recovery unit 30 while supplying the processing liquid to the terminals 21a and 24a, so that the surfaces of the metal terminals 21a and 24a of the substrate 21 and the electronic component 24 are wet-processed. The oxide on the surface of the metal terminals 21a and 24a is removed.

この湿式処理は、無機酸の溶液、有機酸の溶液および還元性作用を有する塩の溶解液の中の少なくともいずれかから選択された処理液でなされる。   This wet treatment is performed with a treatment liquid selected from at least one of a solution of an inorganic acid, a solution of an organic acid, and a solution of a salt having a reducing action.

例えば、この湿式処理用の溶液としては、(1) 塩酸、燐酸、硫酸、硝酸、過酸化水素、臭化水素酸などの無機酸およびこれらの混合物または希釈液、(2) 蟻酸、酢酸、シュウ酸（室温で固体であるシュウ酸は、水やアルコールに溶解して使用する）などの有機酸およびこれらの混合物、(3) ジメチルアミン塩酸塩やジエチルアミン塩酸塩などの塩を水またはアルコールに溶解させたもの、(4) 塩化亜鉛などのハロゲンを含有する金属塩を溶解した溶解液、(5) 塩化アンモニウムなどのハロゲンを含有する塩を溶解した溶解液、(6) 上記薬液の混合溶液を用いる。   For example, the solution for wet processing includes (1) inorganic acids such as hydrochloric acid, phosphoric acid, sulfuric acid, nitric acid, hydrogen peroxide, and hydrobromic acid, and mixtures or diluents thereof; (2) formic acid, acetic acid, and sulfuric acid. Organic acids such as acid (oxalic acid which is solid at room temperature is used by dissolving in water or alcohol) and mixtures thereof. (3) Dissolve salts such as dimethylamine hydrochloride and diethylamine hydrochloride in water or alcohol. (4) a solution in which a halogen-containing metal salt such as zinc chloride is dissolved, (5) a solution in which a halogen-containing salt such as ammonium chloride is dissolved, and (6) a mixed solution of the above-mentioned chemical solutions. Used.

また、前記湿式処理としては、上記のように無機酸の溶液、有機酸の溶液および還元性作用を有する塩の溶解液の中の少なくともいずれかから選択された処理液で酸化膜を除去した後に、酢酸エチルなどの有機溶剤により処理液を洗浄・置換するようにしても良い。   Further, as the wet treatment, after removing the oxide film with a treatment solution selected from at least one of a solution of an inorganic acid, a solution of an organic acid and a solution of a salt having a reducing action as described above. The treatment liquid may be washed and replaced with an organic solvent such as ethyl acetate.

この場合、湿式処理機構27は、処理液による酸化膜除去後に、有機溶剤により処理液を洗浄・置換するので、再酸化を防いで、直ちに位置決め機構23および荷重制御機構26により有機溶剤の存在下での金属接合工程に入ることが可能であり、かつ処理液の接合後の後洗浄が不要となる。   In this case, the wet processing mechanism 27 cleans and replaces the processing liquid with an organic solvent after removing the oxide film with the processing liquid, so that reoxidation is prevented, and the positioning mechanism 23 and the load control mechanism 26 immediately operate in the presence of the organic solvent. And the post-cleaning after the bonding of the processing liquid is not required.

次いで、図１に示された荷重制御機構26により、図３（ｂ）に示されるように基板21に対し電子部品24を相対的に鉛直方向にのみ移動して、電子部品24の金属端子24aと基板21の金属端子21aとを突合せ、さらに金属端子21a，24a間に鉛直荷重を印加するとともにその荷重を制御することで、これらの金属端子21a，24aを金属接合する。   Next, the electronic component 24 is moved only vertically relative to the substrate 21 by the load control mechanism 26 shown in FIG. 1 as shown in FIG. The metal terminals 21a and 24a are joined to the metal terminals 21a and 24a of the board 21 by applying a vertical load between the metal terminals 21a and 24a and controlling the load.

この金属接合時に、金属端子21a，24aを非加熱もしくは融点以上に加熱しない。すなわち、常温のままで加熱しないか、または金属端子21a，24aの融点未満の加熱で抑える。多少温度をかけることにより、固相拡散を促進させることができる。また、この金属接合時に、フラックスなどの融材を用いない。   During this metal joining, the metal terminals 21a and 24a are not heated or are not heated above the melting point. That is, the heating is not performed at the normal temperature or the heating is performed by lowering the melting point of the metal terminals 21a and 24a. By applying some temperature, solid phase diffusion can be promoted. Further, at the time of this metal bonding, no flux such as a flux is used.

さらに、この金属接合した後に、図２に示された洗浄槽15により基板21および電子部品24を洗浄し、乾燥機16により乾燥する。   Further, after the metal bonding, the substrate 21 and the electronic component 24 are cleaned by the cleaning tank 15 shown in FIG.

その上で、図３（c）に示されるように基板21と電子部品24との間にアンダーフィル材31を充填し、基板21と電子部品24との間の機械的強度および電気的絶縁性を確保する。   Then, as shown in FIG. 3 (c), an underfill material 31 is filled between the substrate 21 and the electronic component 24, and the mechanical strength and the electrical insulation between the substrate 21 and the electronic component 24 are increased. To secure.

このアンダーフィル材31の充填は、熱膨張係数の著しく異なる基板21と電子部品24との実装方法において、その熱膨張係数のミスマッチに起因する熱歪に対する実装信頼性を確保するために、基板21と電子部品24との間にアンダーフィル材31を注入硬化して、機械的強度の補強を行う。   The filling of the underfill material 31 is performed in a method of mounting the substrate 21 and the electronic component 24 having significantly different coefficients of thermal expansion, in order to secure mounting reliability against thermal distortion caused by a mismatch in the coefficient of thermal expansion. An underfill material 31 is injected and hardened between the semiconductor device and the electronic component 24 to reinforce the mechanical strength.

このアンダーフィル材31は、熱硬化性樹脂すなわち熱硬化性のエポキシ材料が望ましいが、紫外線硬化型の材料でも可能である。   The underfill material 31 is preferably a thermosetting resin, that is, a thermosetting epoxy material, but may be a UV-curable material.

電子部品（半導体デバイス）24をフリップチップ接合により樹脂基板21上に実装する場合、アンダーフィル材31の主材料となるエポキシ樹脂の弾性率は小さく熱膨張係数も大きいことから、単独では機械的強度の補強が難しいため、シリカなどのフィラーを添加し、物性値を半導体側に合せるよう調整されたものが望ましい。   When the electronic component (semiconductor device) 24 is mounted on the resin substrate 21 by flip-chip bonding, the epoxy resin, which is the main material of the underfill material 31, has a small elastic modulus and a large thermal expansion coefficient, and therefore has a mechanical strength by itself. Since it is difficult to reinforce the semiconductor, it is desirable to add a filler such as silica and adjust the physical properties so as to match the semiconductor side.

また、アンダーフィル材31の供給方法は先入れと後入れに分かれ、例えば、５mm角程度の小さな半導体デバイスの場合で、熱歪による機械的ストレスが小さく、また金バンプを用い端子数の少ないデバイスの実装にはフィラーを含まないアンダーフィル材を基板上に予め塗布しておく先入れ方法も取られるが、１０mm以上の半導体デバイスの場合、熱歪による機械的ストレスが大きいため、フィラーを含有したアンダーフィル材31が使用される。   In addition, the method of supplying the underfill material 31 is divided into first-in and last-in. For example, in the case of a small semiconductor device of about 5 mm square, a mechanical stress due to thermal strain is small, and a device having a small number of terminals using gold bumps is used. In the mounting, a first-in-first-out method in which an underfill material containing no filler is preliminarily applied to the substrate may be used. However, in the case of a semiconductor device of 10 mm or more, the mechanical stress due to thermal strain is large, so that the filler containing the filler is contained. An underfill material 31 is used.

この場合、先入れ法では、アンダーフィル材31中のフィラーが金属端子21a，24a間の金属接合部に噛み込み、接合信頼性が低下することから、電子部品24を基板21に実装した後に、その間隙にアンダーフィル材31を注入する後入れ法が望ましい。アンダーフィル材31は電子部品24と基板21との間隙が極めて小さい場合でも毛細管現象により電子部品24と基板21間に流入していく。   In this case, in the first-in-first-out method, the filler in the underfill material 31 bites into the metal joint between the metal terminals 21a and 24a, and the joining reliability is reduced. Therefore, after mounting the electronic component 24 on the substrate 21, It is desirable to use a post-insert method of injecting the underfill material 31 into the gap. The underfill material 31 flows between the electronic component 24 and the substrate 21 by capillary action even when the gap between the electronic component 24 and the substrate 21 is extremely small.

そして、電子部品24と基板21間にアンダーフィル材31が供給された後、このアンダーフィル材31を150℃程度に加熱して硬化すると、電子部品24と基板21とを強固に接着して機械的補強効果を発揮する。   Then, after the underfill material 31 is supplied between the electronic component 24 and the substrate 21, the underfill material 31 is heated to about 150 ° C. and cured, whereby the electronic component 24 and the substrate 21 are firmly adhered to each other and mechanically. Demonstrates effective reinforcement.

このように、接合を妨げる金属端子21a，24aの表面の酸化物を湿式処理により除去した後に、基板21および電子部品24の金属端子21a，24aを突合せて荷重を印加することで、固相拡散により、融材を使用せずかつ加熱する必要のない金属接合が可能となり、従来のハロゲン化処理方法やエネルギ波照射による表面活性化処理方法が抱えていた種々の問題を解決できる。   As described above, after removing the oxides on the surfaces of the metal terminals 21a and 24a that hinder the bonding by wet processing, the substrate 21 and the metal terminals 21a and 24a of the electronic component 24 are butted to apply a load, so that the solid-phase diffusion is achieved. Accordingly, metal joining without using a flux and without the need for heating can be performed, and various problems that have been encountered in the conventional halogenation treatment method and surface activation treatment method using energy wave irradiation can be solved.

例えば、強い活性を有する場合の問題点、地球環境保護の上でコスト高となる点、洗浄工程を必要とする点、生産効率が悪い点、制御が困難である点、コストの高い装置を必要とし汎用的でない点、接合材料が金に限られる点などを解決できる。   For example, problems with strong activity, high cost in protecting the global environment, need for cleaning process, poor production efficiency, difficult control, need expensive equipment It is possible to solve the problem that it is not general-purpose and that the joining material is limited to gold.

また、金属接合される電子部品24の金属端子24aおよび基板21の金属端子21aの少なくとも一方は、突起状すなわちバンプ状に形成されたので、基板21および電子部品24の各金属端子21a，24aを突合せて荷重を印加したときに、塑性変形により金属端子間の高い接合信頼性が得られる。   Further, since at least one of the metal terminal 24a of the electronic component 24 and the metal terminal 21a of the substrate 21 to be metal-joined is formed in a projecting shape, that is, a bump shape, the metal terminals 21a and 24a of the substrate 21 and the electronic component 24 are When a load is applied in abutting manner, high bonding reliability between metal terminals can be obtained by plastic deformation.

また、基板21および電子部品24の各金属端子21a，24aの少なくとも一方が、軟質はんだ合金や、錫、鉛、インジウム、インジウム合金などの低剛性金属の場合は、接合を妨げる金属端子21a，24aの表面の酸化物を湿式処理により除去した後に、基板21および電子部品24の金属端子21a，24aを突合せて荷重を印加することで、固相拡散による金属接合を確実にできる。   If at least one of the metal terminals 21a, 24a of the substrate 21 and the electronic component 24 is a soft solder alloy or a low-rigidity metal such as tin, lead, indium, or indium alloy, the metal terminals 21a, 24a After removing the oxide on the surface by wet processing, the substrate 21 and the metal terminals 21a, 24a of the electronic component 24 are butted and a load is applied, so that metal bonding by solid phase diffusion can be ensured.

また、無機酸の溶液、有機酸の溶液および還元性作用を有する塩の溶解液の中の少なくともいずれかから選択された処理液でなされる湿式処理により、金属端子21a，24aの表面の酸化物を確実に除去できる。   In addition, by wet treatment performed with a treatment solution selected from at least one of a solution of an inorganic acid, a solution of an organic acid, and a solution of a salt having a reducing action, oxides on the surfaces of the metal terminals 21a and 24a are formed. Can be reliably removed.

さらに、この湿式処理において、上記のような処理液で酸化物除去処理された金属端子21a，24aの表面を、さらに予め有機溶剤で洗浄・置換処理をしておくことで、後洗浄が不要となり、図２に示された洗浄槽15を省略できる効果がある。   Further, in this wet treatment, the surfaces of the metal terminals 21a and 24a, which have been subjected to the oxide removal treatment with the treatment liquid as described above, are further cleaned and replaced with an organic solvent in advance, so that post-cleaning becomes unnecessary. This has the effect that the cleaning tank 15 shown in FIG. 2 can be omitted.

また、金属端子21a，24aを融点以上に加熱しないので、熱歪による信頼性低下を防止できる。   In addition, since the metal terminals 21a and 24a are not heated above the melting point, a decrease in reliability due to thermal strain can be prevented.

また、金属端子21a，24aの金属接合が、融材すなわちフラックスを用いない非融材状態でなされることで、融材による電気的な損傷を防止できる。   Further, since the metal joining of the metal terminals 21a and 24a is performed in a non-fused state without using a flux, that is, a flux, electrical damage due to the flux can be prevented.

また、電子部品実装後に基板21と電子部品24との隙間にアンダーフィル材31を充填するので、電子部品実装前にアンダーフィル材を塗布する方法より、電子部品と基板の金属端子間へのアンダーフィル材の噛み込みを防止でき、高い接合信頼性を確保できる。   Also, since the underfill material 31 is filled into the gap between the board 21 and the electronic component 24 after mounting the electronic component, the underfill between the electronic component and the metal terminal of the board is reduced by a method of applying the underfill material before mounting the electronic component. Entrapment of the fill material can be prevented, and high joining reliability can be ensured.

また、基板21および電子部品24の少なくとも一方が、有機材料、セラミックス材料、半導体材料、これらの複合体のいずれであっても、これらの基板21および電子部品24の各金属端子21a，24a間の固相拡散による金属間結合が可能である。   Further, regardless of whether at least one of the substrate 21 and the electronic component 24 is an organic material, a ceramic material, a semiconductor material, or a composite thereof, the metal terminals 21a and 24a of the substrate 21 and the electronic component 24 Intermetallic bonding by solid phase diffusion is possible.

また、電子部品保持機構25により電子部品24を保持するとともに、基板保持機構22により基板21を保持し、位置決め機構23により基板21および電子部品24の各金属端子21a，24aを位置決めし、湿式処理機構27により、基板21および電子部品24の各金属端子21a，24aの表面の酸化物を湿式処理で除去し、荷重制御機構26により、基板21に対し電子部品24を相対的に鉛直方向にのみ移動して基板21および電子部品24の各金属端子21a，24a間に荷重を印加するとともに、その荷重を制御して基板21および電子部品24の各金属端子21a，24aを金属接合するので、特に、基板21に対し電子部品24を相対的に鉛直方向にのみ移動して荷重を制御することで、固相拡散を十分に促進させ、融材の使用や加熱の必要がなく、電気的信頼性を確保できるとともに、熱歪による電子部品24の信頼性低下を防ぐことができる。また一方向への荷重印加であるため、金属端子21a，24a間の機械的強度の劣化や非接触または接触不良を防止することができる。   Also, while holding the electronic component 24 by the electronic component holding mechanism 25, holding the substrate 21 by the board holding mechanism 22, and positioning the metal terminals 21a and 24a of the board 21 and the electronic component 24 by the positioning mechanism 23, the wet processing is performed. The mechanism 27 removes oxides on the surfaces of the metal terminals 21a and 24a of the substrate 21 and the electronic component 24 by wet processing, and the load control mechanism 26 moves the electronic component 24 relative to the substrate 21 only in the vertical direction. It moves and applies a load between the metal terminals 21a and 24a of the board 21 and the electronic component 24, and controls the load to metal-join the metal terminals 21a and 24a of the board 21 and the electronic component 24. By controlling the load by moving the electronic component 24 only in the vertical direction relative to the substrate 21, the solid-phase diffusion is sufficiently promoted, and there is no need to use a melting material or heating, thereby improving electrical reliability. As well as electronic components 24 Can be prevented from deteriorating. Further, since the load is applied in one direction, it is possible to prevent the mechanical strength between the metal terminals 21a and 24a from deteriorating, or preventing non-contact or poor contact.

さらに、電子部品保持機構25を介して処理液供給部28と処理液回収部30とを配置したので、湿式処理をした後に直ちに金属接合工程に入ることができ、生産効率を向上できる。   Furthermore, since the processing liquid supply unit 28 and the processing liquid recovery unit 30 are arranged via the electronic component holding mechanism 25, the metal bonding step can be started immediately after the wet processing, and the production efficiency can be improved.

特に、湿式処理機構27の処理液による酸化膜除去後に、処理液が有機溶剤により洗浄・置換される場合は、再酸化を防いで、直ちに位置決め機構23および荷重制御機構26により有機溶剤の存在下での金属接合工程に入ることができ、かつ処理液の接合後の後洗浄を不要にできる。   In particular, when the processing liquid is washed and replaced with an organic solvent after the removal of the oxide film by the processing liquid in the wet processing mechanism 27, re-oxidation is prevented, and the positioning mechanism 23 and the load control mechanism 26 immediately prevent the re-oxidation in the presence of the organic solvent. And the post-cleaning after the bonding of the processing liquid can be eliminated.

次に、図４乃至図７を参照しながら、上記実装方法により基板21上に電子部品24を実装した結果物のダイシア強度などに関する実測データを示す。   Next, with reference to FIGS. 4 to 7, measured data on the die shear strength and the like of a product obtained by mounting the electronic component 24 on the board 21 by the above mounting method will be described.

図４は、1/10に希釈した塩酸でエッチング処理した金属端子21a，24aに関して、エッチング時間とダイシア強度との関係を表わすデータである。金属端子21a，24a間の金属接合時の鉛直荷重は、１バンプ当り112.5ｇである。この場合、４００端子を有する１０mm角のシリコンチップを使用した場合の荷重は４５kgである。   FIG. 4 shows data representing the relationship between the etching time and the die shear strength for the metal terminals 21a and 24a etched with 1/10 diluted hydrochloric acid. The vertical load at the time of metal joining between the metal terminals 21a and 24a is 112.5 g per bump. In this case, when a 10 mm square silicon chip having 400 terminals is used, the load is 45 kg.

図５は、1/10に希釈した塩酸で１０分間エッチング処理した後の金属端子21a，24aに関して、実装荷重と、ダイシア強度および電気的接合性との関係を表わすデータである。   FIG. 5 is data showing the relationship between the mounting load, the die shear strength, and the electrical bondability of the metal terminals 21a and 24a after being etched with hydrochloric acid diluted 1/10 for 10 minutes.

図６は、有機酸を使用した例であり、1/10に希釈した蟻酸でエッチング処理した場合の、エッチング時間とダイシア強度および電気的接合性との関係を表わすデータである。金属端子21a，24a間の金属接合時の鉛直荷重は、１バンプ当り112.5ｇである。   FIG. 6 is an example in which an organic acid is used, and is data showing the relationship between the etching time, the die shear strength, and the electrical bondability when etching is performed with formic acid diluted to 1/10. The vertical load at the time of metal joining between the metal terminals 21a and 24a is 112.5 g per bump.

図７は、有機酸の種類による効果の相違、すなわち電離定数に依存する効果の相違を示す、エッチング時間とダイシア強度および電気的接合性との関係を表わすデータである。金属端子21a，24a間の金属接合時の鉛直荷重は、１バンプ当り112.5ｇである。   FIG. 7 is data showing the relationship between the etching time, the die shear strength, and the electrical bondability, showing the difference in the effect depending on the type of the organic acid, that is, the difference in the effect depending on the ionization constant. The vertical load at the time of metal joining between the metal terminals 21a and 24a is 112.5 g per bump.

蟻酸と酢酸とを、共に同条件の、加熱なしの２３℃でエッチング処理した場合の電気的接合性の相違は、蟻酸の電離定数が、2.05×10−４であり、酢酸の電離定数が1.86×10−５である。 When the formic acid and acetic acid were etched at 23 ° C. without heating under the same conditions, the difference in electrical bonding was that the ionization constant of formic acid was 2.05 × 10 −4 and the ionization constant of acetic acid was 1.86. × 10 −5 .

電離定数が１桁違い、これが効いている。加熱するなどの手段をとれば改善することは明らかである。   This is effective because the ionization constant is one digit different. It is clear that improvement can be achieved by taking measures such as heating.

本発明に係る電子部品の実装装置の一実施の形態を示す正面図である。It is a front view showing one embodiment of an electronic component mounting device concerning the present invention. 同上実装装置が組込まれた電子部品実装関連設備を示す正面図である。It is a front view which shows the electronic component mounting related equipment in which the mounting apparatus is incorporated. 本発明に係る電子部品の実装方法の一実施の形態を示す説明図であり、（ａ）は基板および電子部品の各金属端子を位置決めした状態、（ｂ）は各金属端子を金属接合した状態、（ｃ）は基板と電子部品との隙間にアンダーフィル材を充填した状態を示す。It is explanatory drawing which shows one Embodiment of the mounting method of the electronic component which concerns on this invention, (a) The state which positioned each metal terminal of a board | substrate and an electronic component, (b) The state which bonded each metal terminal by metal. (C) shows a state in which a gap between the substrate and the electronic component is filled with an underfill material. 本発明に係る希釈した塩酸でエッチング処理した場合の、エッチング時間とダイシア強度との関係を表わすデータである。4 is data showing the relationship between etching time and die shear strength when etching is performed with diluted hydrochloric acid according to the present invention. 希釈した塩酸でエッチング処理した後の実装荷重とダイシア強度および電気的接合性との関係を表わすデータである。9 is data showing the relationship between the mounting load after dicing with hydrochloric acid, the die shear strength, and the electrical bondability. 有機酸でエッチング処理した場合の、エッチング時間とダイシア強度および電気的接合性との関係を表わすデータである。It is data showing the relationship between the etching time, the die shear strength, and the electrical bonding property when the etching treatment is performed with an organic acid. 有機酸の種類による効果の相違を示す、エッチング時間とダイシア強度および電気的接合性との関係を表わすデータである。4 is data showing the relationship between etching time, die shear strength, and electrical bondability, showing a difference in effect depending on the type of organic acid.

符号の説明Explanation of reference numerals

21 基板
21a 金属端子
22 基板保持機構
23 位置決め機構
24 電子部品
24a 金属端子
25 電子部品保持機構
26 荷重制御機構
27 湿式処理機構
28 処理液供給部
29 処理液
30 処理液回収部
31 アンダーフィル材 21 substrate
21a Metal terminal
22 Board holding mechanism
23 Positioning mechanism
24 Electronic components
24a metal terminal
25 Electronic component holding mechanism
26 Load control mechanism
27 Wet processing mechanism
28 Treatment liquid supply section
29 Treatment liquid
30 Treatment liquid recovery section
31 Underfill material

Claims (12)

電子部品の電極部に形成された金属端子と、電子部品を搭載する基板に形成された金属端子とを湿式処理して、これらの金属端子の表面の酸化物を除去し、
次いで電子部品の金属端子と基板の金属端子とを突合せて荷重を印加することで、これらの金属端子を固相拡散により金属接合する
ことを特徴とする電子部品の実装方法。 The metal terminal formed on the electrode part of the electronic component and the metal terminal formed on the substrate on which the electronic component is mounted are wet-processed to remove oxides on the surfaces of these metal terminals,
Next, a metal terminal of the electronic component and a metal terminal of the substrate are abutted to apply a load, and the metal terminals are metal-bonded by solid-phase diffusion. 金属接合される電子部品の金属端子および基板の金属端子の少なくとも一方は、突起状に形成された
ことを特徴とする請求項１記載の電子部品の実装方法。 The method for mounting an electronic component according to claim 1, wherein at least one of the metal terminal of the electronic component and the metal terminal of the substrate to be metal-joined is formed in a protruding shape. 金属接合される電子部品の金属端子および基板の金属端子の少なくとも一方は、
軟質はんだ合金と、錫、鉛、インジウム、インジウム合金などの低剛性金属との中の少なくともいずれかから選択された
ことを特徴とする請求項１または２記載の電子部品の実装方法。 At least one of the metal terminal of the electronic component and the metal terminal of the substrate to be metal-joined is
The method for mounting an electronic component according to claim 1, wherein the method is selected from at least one of a soft solder alloy and a low-rigidity metal such as tin, lead, indium, and an indium alloy. 湿式処理は、
無機酸の溶液、有機酸の溶液および還元性作用を有する塩の溶解液の中の少なくともいずれかから選択された処理液でなされる
ことを特徴とする請求項１乃至３のいずれか記載の電子部品の実装方法。 Wet processing is
The electron according to any one of claims 1 to 3, wherein the treatment is performed with a treatment solution selected from at least one of a solution of an inorganic acid, a solution of an organic acid, and a solution of a salt having a reducing action. Component mounting method. 湿式処理は、
無機酸の溶液、有機酸の溶液および還元性作用を有する塩の溶解液の中の少なくともいずれかから選択された処理液でなされ、
次いで有機溶剤で洗浄・置換がなされる
ことを特徴とする請求項１乃至３のいずれか記載の電子部品の実装方法。 Wet processing is
Made with a treatment solution selected from at least one of a solution of an inorganic acid, a solution of an organic acid and a solution of a salt having a reducing action,
4. The method for mounting an electronic component according to claim 1, wherein the substrate is cleaned and replaced with an organic solvent. 金属接合時に、金属端子を非加熱もしくは融点以上に加熱しない
ことを特徴とする請求項１乃至５のいずれか記載の電子部品の実装方法。 The method for mounting an electronic component according to claim 1, wherein the metal terminal is not heated or is not heated to a temperature equal to or higher than the melting point during metal joining. 金属接合は、非融材状態でなされる
ことを特徴とする請求項１乃至６のいずれか記載の電子部品の実装方法。 The method for mounting an electronic component according to claim 1, wherein the metal bonding is performed in a non-fused state. 金属接合した後に、電子部品と基板との隙間にアンダーフィル材を充填する工程を有する
ことを特徴とする請求項１乃至７のいずれか記載の電子部品の実装方法。 The method for mounting an electronic component according to claim 1, further comprising a step of filling an underfill material into a gap between the electronic component and the substrate after the metal bonding. 電子部品および基板の少なくとも一方は、
有機材料、セラミックス材料、半導体材料、これらの複合体の中の少なくともいずれかから選択された
ことを特徴とする請求項１乃至８のいずれか記載の電子部品の実装方法。 At least one of the electronic component and the substrate is
The electronic component mounting method according to any one of claims 1 to 8, wherein the method is selected from at least one of an organic material, a ceramic material, a semiconductor material, and a composite thereof. 電子部品を保持する電子部品保持機構と、
電子部品を搭載する基板を保持する基板保持機構と、
電子部品の電極部に形成された金属端子と基板に形成された金属端子とを位置決めする位置決め機構と、
電子部品および基板の各金属端子の表面の酸化物を湿式処理で除去する湿式処理機構と、
基板に対し相対的に鉛直方向にのみ移動して電子部品および基板の各金属端子間に荷重を印加するとともにその荷重を制御して電子部品および基板の各金属端子を固相拡散により金属接合する荷重制御機構と
を具備したことを特徴とする電子部品の実装装置。 An electronic component holding mechanism for holding the electronic component;
A board holding mechanism for holding a board on which electronic components are mounted,
A positioning mechanism for positioning the metal terminal formed on the electrode part of the electronic component and the metal terminal formed on the substrate,
A wet processing mechanism for removing oxide on the surface of each metal terminal of the electronic component and the substrate by wet processing,
It moves only in the vertical direction relative to the substrate and applies a load between the electronic components and the metal terminals of the substrate, and controls the load to metal-join the metal terminals of the electronic components and the substrate by solid-phase diffusion. An electronic component mounting apparatus, comprising: a load control mechanism. 湿式処理機構は、
電子部品保持機構の一側に配置され電子部品および基板の金属端子に向って処理液を供給する処理液供給部と、
電子部品保持機構の他側に配置され電子部品および基板の金属端子を経た余剰の処理液を回収する処理液回収部と
を具備したことを特徴とする請求項１０記載の電子部品の実装装置。 The wet processing mechanism
A processing liquid supply unit that is disposed on one side of the electronic component holding mechanism and supplies a processing liquid toward the electronic component and the metal terminal of the board;
The electronic component mounting apparatus according to claim 10, further comprising: a processing liquid recovery unit disposed on the other side of the electronic component holding mechanism and configured to recover an excess processing liquid that has passed through the electronic component and the metal terminal of the substrate. 湿式処理機構は、処理液で金属端子の表面の酸化物を湿式処理して除去した後に有機溶剤で洗浄・置換するものであり、
位置決め機構は、有機溶剤の存在下で電子部品の金属端子と基板の金属端子とを位置決めするものであり、
荷重制御機構は、有機溶剤の存在下で電子部品および基板の各金属端子間に印加される荷重を制御するものである
ことを特徴とする請求項１０または１１記載の電子部品の実装装置。 The wet processing mechanism is to wash and replace with an organic solvent after removing the oxide on the surface of the metal terminal by wet processing with a processing liquid,
The positioning mechanism is for positioning the metal terminal of the electronic component and the metal terminal of the substrate in the presence of the organic solvent,
12. The electronic component mounting apparatus according to claim 10, wherein the load control mechanism controls a load applied between the electronic component and each metal terminal of the substrate in the presence of the organic solvent.
JP2004095797A 2003-03-28 2004-03-29 Electronic component mounting equipment Expired - Fee Related JP4288196B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007305799A (en) * 2006-05-11 2007-11-22 Fujitsu Ltd Manufacturing method of semiconductor device
JP2014192380A (en) * 2013-03-27 2014-10-06 Fujitsu Ltd Method of manufacturing electronic device
JP2021531644A (en) * 2018-08-21 2021-11-18 ノースロップ グラマン システムズ コーポレーション Methods for forming superconducting structures

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007305799A (en) * 2006-05-11 2007-11-22 Fujitsu Ltd Manufacturing method of semiconductor device
JP2014192380A (en) * 2013-03-27 2014-10-06 Fujitsu Ltd Method of manufacturing electronic device
JP2021531644A (en) * 2018-08-21 2021-11-18 ノースロップ グラマン システムズ コーポレーション Methods for forming superconducting structures
JP7431758B2 (en) 2018-08-21 2024-02-15 ノースロップ グラマン システムズ コーポレーション Method for forming superconducting structures

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