JPH11251323A - Substrate heating device - Google Patents
Substrate heating deviceInfo
- Publication number
- JPH11251323A JPH11251323A JP6617798A JP6617798A JPH11251323A JP H11251323 A JPH11251323 A JP H11251323A JP 6617798 A JP6617798 A JP 6617798A JP 6617798 A JP6617798 A JP 6617798A JP H11251323 A JPH11251323 A JP H11251323A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- panel heater
- heating device
- heated
- glass substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は液晶表示装置（ＬＣ
Ｄ）に用いられるガラス基板等を加熱処理する基板加熱
装置に関する。The present invention relates to a liquid crystal display (LC).
The present invention relates to a substrate heating device for heating a glass substrate or the like used in D).
【０００２】[0002]
【従来の技術】液晶表示装置の半導体回路はガラス基板
にＣＶＤ(Chemical Vapor Deposition) による薄膜の生
成、プラズマによるエッチング等の処理をし形成される
が、斯かる処理工程の前工程としてガラス基板を基板加
熱装置により予熱する工程がある。2. Description of the Related Art A semiconductor circuit of a liquid crystal display device is formed by forming a thin film on a glass substrate by CVD (Chemical Vapor Deposition), etching by plasma, or the like. There is a step of preheating by a substrate heating device.
【０００３】図２〜図５に於いて従来の基板加熱装置を
説明する。A conventional substrate heating apparatus will be described with reference to FIGS.
【０００４】図中、１は搬送室であり、該搬送室１の周
囲に放射状にロードロック室２、予熱室３、第１処理室
４、第２処理室５、第３処理室６がそれぞれ設けられて
いる。In FIG. 1, reference numeral 1 denotes a transfer chamber, and a load lock chamber 2, a preheating chamber 3, a first processing chamber 4, a second processing chamber 5, and a third processing chamber 6 are arranged radially around the transfer chamber 1. Is provided.
【０００５】前記予熱室３には基板加熱装置７が設けら
れている。該基板加熱装置７は対向して平行に立設され
た側板８と、水平層状に所定間隔で５段設けられたパネ
ルヒータ９を有し、該パネルヒータ９の両端部は前記両
側板８，８の内面に固着されている。前記基板加熱装置
７は上方に突出する駆動軸１０を有し、該基板加熱装置
７は駆動装置（図示せず）により前記駆動軸１０を介し
て昇降可能となっている。又、前記両側板８の内面に
は、前記各パネルヒータ９間に基板受材１１が対向して
突設され、該対向する一対の基板受材１１，１１に掛渡
ってガラス基板１２が載置される。[0005] A substrate heating device 7 is provided in the preheating chamber 3. The substrate heating device 7 includes side plates 8 erected in parallel to face each other, and panel heaters 9 provided in five layers at predetermined intervals in a horizontal layer shape. 8 is fixed to the inner surface. The substrate heating device 7 has a drive shaft 10 projecting upward, and the substrate heating device 7 can be moved up and down via the drive shaft 10 by a drive device (not shown). On the inner surface of the both side plates 8, a substrate receiving material 11 is provided so as to face between the panel heaters 9, and a glass substrate 12 is mounted on the pair of opposed substrate receiving materials 11. Is placed.
【０００６】前記搬送室１には基板搬送ロボット１３が
設けられ、該基板搬送ロボット１３の搬送プレート１４
により前記ガラス基板１２が受載され、前記ロードロッ
ク室２、予熱室３、第１処理室４、第２処理室５、第３
処理室６間の移載が行われる。The transfer chamber 1 is provided with a substrate transfer robot 13 and a transfer plate 14 of the substrate transfer robot 13.
The glass substrate 12 is received by the load lock chamber 2, the preheating chamber 3, the first processing chamber 4, the second processing chamber 5, and the third
Transfer between the processing chambers 6 is performed.
【０００７】前記基板搬送ロボット１３により前記基板
加熱装置７の各段の基板受材１１に前記ガラス基板１２
が装填される。前記基板受材１１によって支持された前
記ガラス基板１２は前記パネルヒータ９によって上下両
面から輻射加熱され所定温度に予熱される。予熱が完了
すると、前記基板搬送ロボット１３により前記ガラス基
板１２の搬出が行われる。The glass substrate 12 is transferred to the substrate receiving member 11 of each stage of the substrate heating device 7 by the substrate transfer robot 13.
Is loaded. The glass substrate 12 supported by the substrate receiving member 11 is radiated from both upper and lower surfaces by the panel heater 9 and is preheated to a predetermined temperature. When the preheating is completed, the glass substrate 12 is carried out by the substrate transfer robot 13.
【０００８】次に図６に於いて従来の他の基板加熱装置
を説明する。Next, another conventional substrate heating apparatus will be described with reference to FIG.
【０００９】基板加熱装置１５は対向して平行に立設さ
れたパネルヒータ１６と水平層状に所定間隔で複数段
（図示では７段）設けられた均熱板１７を有している。
該均熱板１７は熱伝導性の良い材質であり、該均熱板１
７の両端部は前記パネルヒータ１６の内面に固着されて
いる。両側の前記パネルヒータ１６の内面には、該各均
熱板１７間に基板受材１８が対向して突設され、該対向
する一対の基板受材１８，１８に掛渡ってガラス基板１
２が載置される様になっている。The substrate heating device 15 has a panel heater 16 erected in parallel and opposed to each other, and a soaking plate 17 provided at a plurality of stages (seven stages in the drawing) at predetermined intervals in a horizontal layer.
The heat equalizing plate 17 is made of a material having good thermal conductivity.
7 are fixed to the inner surface of the panel heater 16. On the inner surfaces of the panel heaters 16 on both sides, a substrate receiving member 18 is provided so as to protrude between the heat equalizing plates 17 so as to extend over the pair of opposed substrate receiving members 18.
2 is placed.
【００１０】前記パネルヒータ１６で発生した熱は該パ
ネルヒータ１６に接触する前記均熱板１７の両端部を介
して次第に該均熱板１７全体に伝達する。該均熱板１７
は前記基板受板１８上の前記ガラス基板１２を上下両面
から輻射加熱し、該ガラス基板１２は所定温度に予熱さ
れる。The heat generated by the panel heater 16 is gradually transmitted to the entire heat equalizing plate 17 through both ends of the heat equalizing plate 17 which comes into contact with the panel heater 16. The heat equalizing plate 17
Radiatively heats the glass substrate 12 on the substrate receiving plate 18 from both upper and lower surfaces, and the glass substrate 12 is preheated to a predetermined temperature.
【００１１】[0011]
【発明が解決しようとする課題】近年、液晶表示装置の
大型化に伴いガラス基板のサイズは６５０×８３０mmと
なっており、このサイズに対応させ図４で示した従来の
基板加熱装置７を製作した場合は、従来の３７０×４７
０mmサイズのガラス基板用の基板加熱装置と比べて前記
パネルヒータ９の重量が約３倍となる。従って、前記駆
動軸１０を含めた駆動装置を大型化する等仕様を変更す
る必要が生じ、前記基板加熱装置７の製作コストが著し
く増大するという問題があった。In recent years, the size of a glass substrate has been increased to 650.times.830 mm as the size of a liquid crystal display device has increased, and a conventional substrate heating device 7 shown in FIG. If so, the conventional 370 × 47
The weight of the panel heater 9 is about three times that of a substrate heating device for a glass substrate of 0 mm size. Therefore, it is necessary to change specifications such as increasing the size of the driving device including the driving shaft 10, and there is a problem that the manufacturing cost of the substrate heating device 7 is significantly increased.
【００１２】又、図６で示した従来の基板加熱装置１５
では、前記ガラス基板１２を加熱するのは主に前記均熱
板１７であり、該均熱板１７は前記パネルヒータ１６か
らの熱伝達により前記均熱板１７の両端部を介して次第
に加熱される。従って、前記基板加熱装置１５の立上げ
時に前記均熱板１７が所要温度に到達する迄にある程度
の時間を要し、前記基板加熱装置１５の稼働率の向上が
図れない。又、前記ガラス基板１２が繰返し前記予熱室
３に搬送されるに従い次第に前記均熱板１７の温度が低
下し、前記ガラス基板１２の予熱温度にバラツキが生
じ、次のプロセスの際に膜質が均一でない等成膜特性に
も影響を及ぼす虞れがあるという問題があった。The conventional substrate heating device 15 shown in FIG.
It is mainly the soaking plate 17 that heats the glass substrate 12, and the soaking plate 17 is gradually heated through both ends of the soaking plate 17 by heat transfer from the panel heater 16. You. Therefore, it takes a certain amount of time for the heat equalizing plate 17 to reach a required temperature when the substrate heating device 15 starts up, and it is not possible to improve the operation rate of the substrate heating device 15. Further, as the glass substrate 12 is repeatedly transported to the preheating chamber 3, the temperature of the heat equalizing plate 17 gradually decreases, and the preheating temperature of the glass substrate 12 varies, so that the film quality becomes uniform during the next process. However, there is a problem that film formation characteristics may be affected.
【００１３】本発明は斯かる実情に鑑み、コストの削減
及び生産性の向上等を図り、更に基板加熱装置の立上げ
時の時間短縮を図り、該基板加熱装置の稼働率の向上を
図ると共にガラス基板の予熱精度を向上させ、該ガラス
基板の成膜特性の向上を図るものである。In view of such circumstances, the present invention aims to reduce costs and improve productivity, to shorten the time required for starting the substrate heating device, and to improve the operation rate of the substrate heating device. An object of the present invention is to improve the preheating accuracy of a glass substrate and improve the film forming characteristics of the glass substrate.
【００１４】[0014]
【課題を解決するための手段】本発明は、水平層状に複
数段載置された基板を加熱する基板加熱装置に於いて、
前記基板と基板とが成す複数段の空間にパネルヒータと
間接加熱板とを交互に配設した基板加熱装置に係り、基
板の一方の面がパネルヒータにより輻射加熱され、他方
の面が間接加熱板により輻射加熱される。SUMMARY OF THE INVENTION The present invention relates to a substrate heating apparatus for heating a plurality of substrates mounted in a horizontal layer on a plurality of stages.
The present invention relates to a substrate heating apparatus in which a panel heater and an indirect heating plate are alternately arranged in a plurality of spaces formed by the substrate and the substrate, wherein one surface of the substrate is radiantly heated by the panel heater and the other surface is indirectly heated. The plate is radiantly heated.
【００１５】[0015]
【発明の実施の形態】以下、図１を参照しつつ本発明の
実施の形態を説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG.
【００１６】基板加熱装置２５は対向して平行に立設さ
れた側板２６と水平層状に所定間隔で複数段（図示では
４段）設けられた間接加熱板である均熱板２７と、該各
均熱板２７，２７間にそれぞれ水平に挿入されたパネル
ヒータ２８を有している。The substrate heating device 25 includes side plates 26 erected in parallel to face each other, and a soaking plate 27 as an indirect heating plate provided in a plurality of stages (four stages in the drawing) at predetermined intervals in a horizontal layer. Panel heaters 28 are horizontally inserted between the heat equalizing plates 27, 27, respectively.
【００１７】前記均熱板２７は熱伝導性の良い材質、好
ましくはアルミニウム製であり、該均熱板２７及び前記
パネルヒータ２８は両端部が前記両側板２６の内面に固
着されている。又、前記パネルヒータ２８は両発熱面の
温度が設定値に均一に保持される様制御可能な制御装置
（図示せず）を有している。The heat equalizing plate 27 is made of a material having good heat conductivity, preferably aluminum, and both ends of the heat equalizing plate 27 and the panel heater 28 are fixed to the inner surfaces of the both side plates 26. Further, the panel heater 28 has a control device (not shown) which can be controlled so that the temperatures of both heat generating surfaces are uniformly maintained at set values.
【００１８】前記両側板２６の内面には前記均熱板２７
と前記パネルヒータ２８間の各段毎に基板受材２９が対
向して突設され、該対向する一対の基板受材２９，２９
の対向距離はガラス基板３０の両側幅寸法より僅かに狭
くなっている。従って、前記各基板受材２９でガラス基
板３０の両端部を支持可能であり、前記基板加熱装置２
５全体で一度に所要枚数（本実施の形態では６枚）の前
記ガラス基板３０を載置できる様になっている。The heat equalizing plate 27 is provided on the inner surface of the both side plates 26.
A substrate receiving member 29 is provided so as to face each other between the panel heaters 28 and the pair of panel heaters 28, and a pair of substrate receiving members 29, 29 facing each other is provided.
Is slightly smaller than the width of both sides of the glass substrate 30. Therefore, both ends of the glass substrate 30 can be supported by the substrate receiving members 29, and the substrate heating device 2
A required number (six in the present embodiment) of the glass substrates 30 can be placed at one time in the entirety of the glass substrate 30.
【００１９】前記均熱板２７は前記パネルヒータ２８に
比べて軽量であり、前記基板加熱装置２５の総重量は前
記均熱板２７の代わりに前記パネルヒータ２８を用いた
場合と比較して、約３０％の軽量化が図れる。従って、
前記ガラス基板３０を前記基板受材２９上に移載する際
に前記基板加熱装置２５を昇降動させる駆動装置を大型
化する等仕様変更する必要がなく、既存装置を利用する
ことができ経済的である。The heat equalizing plate 27 is lighter in weight than the panel heater 28, and the total weight of the substrate heating device 25 is smaller than the case where the panel heater 28 is used instead of the heat equalizing plate 27. The weight can be reduced by about 30%. Therefore,
When the glass substrate 30 is transferred onto the substrate receiving member 29, there is no need to change specifications such as increasing the size of a driving device that moves the substrate heating device 25 up and down, and it is possible to use an existing device economically. It is.
【００２０】更に、前記均熱板２７は前記パネルヒータ
２８と比べて安価であり、前記基板加熱装置２５は前記
均熱板２７の代わりに前記パネルヒータ２８を設けた場
合の製作費の約４５％の費用で製作可能である。Further, the heat equalizing plate 27 is inexpensive as compared with the panel heater 28, and the substrate heating device 25 costs about 45% of the production cost when the panel heater 28 is provided instead of the heat equalizing plate 27. Can be manufactured at a cost of%.
【００２１】以下作用を説明する。The operation will be described below.
【００２２】前記ガラス基板３０は従来と同様の手順で
前記均熱板２７と前記パネルヒータ２８間の各段に挿入
され前記基板受材２９によって支持される。The glass substrate 30 is inserted into each stage between the heat equalizing plate 27 and the panel heater 28 in the same procedure as in the prior art, and is supported by the substrate receiving material 29.
【００２３】前記ガラス基板３０は常温であり、前記パ
ネルヒータ２８から吸熱し、該パネルヒータ２８の温度
を一旦低下させるが、該パネルヒータ２８の発熱面の温
度は前記制御装置（図示せず）により制御されており、
直ちに設定温度迄上昇回復する。前記パネルヒータ２８
は自ら発熱すると共に発熱面が前記ガラス基板３０の被
加熱面に対向しているので温度変化に対する応答性が良
く、設定温度迄回復するのに要する時間も短くて済む。The glass substrate 30 is at normal temperature, absorbs heat from the panel heater 28, and temporarily lowers the temperature of the panel heater 28. The temperature of the heating surface of the panel heater 28 is controlled by the control device (not shown). Is controlled by
Immediately recovers to the set temperature. The panel heater 28
Generates heat by itself, and the heat-generating surface is opposed to the surface to be heated of the glass substrate 30, so that the response to a temperature change is good, and the time required to recover to the set temperature is short.
【００２４】前記パネルヒータ２８は前記各ガラス基板
３０の上面と下面のどちらか一方の面を均等に加熱す
る。前記パネルヒータ２８の表面は均一な温度に保たれ
ているので前記ガラス基板３０へは常時所要熱量が安定
して供給される。The panel heater 28 uniformly heats one of the upper surface and the lower surface of each of the glass substrates 30. Since the surface of the panel heater 28 is maintained at a uniform temperature, a required amount of heat is constantly supplied to the glass substrate 30 stably.
【００２５】又、前記均熱板２７は前記パネルヒータ２
８により前記ガラス基板３０を通して輻射加熱され、前
記均熱板２７は熱伝導性が良いので短時間で均等な温度
となり前記ガラス基板３０の反パネルヒータ２８側の面
を輻射加熱する。The heat equalizing plate 27 is connected to the panel heater 2.
8, the substrate is radiated and heated through the glass substrate 30, and the heat equalizing plate 27 has a good thermal conductivity, so that the temperature becomes uniform in a short time and the surface of the glass substrate 30 on the side opposite to the panel heater 28 is radiated and heated.
【００２６】予熱が完了した前記各ガラス基板３０は従
来と同様の手順で処理室へ搬送され、成膜処理が施され
る。Each of the glass substrates 30 which has been preheated is transported to a processing chamber in the same procedure as in the prior art, and subjected to a film forming process.
【００２７】尚、上記実施の形態に於いては、間接加熱
板として前記均熱板２７を設けているが、該均熱板２７
の代わりに反射率の良い材質、好ましくは鏡面仕上げを
施したステンレス製の反射板であっても良い。この場
合、該反射板は前記パネルヒータ２８からの熱を反射
し、前記ガラス基板３０の反パネルヒータ２８側の面を
輻射加熱する。In the above embodiment, the soaking plate 27 is provided as an indirect heating plate.
Instead, a reflective plate made of a material having a high reflectivity, preferably a stainless steel plate having a mirror finish may be used. In this case, the reflection plate reflects heat from the panel heater 28 and radiates and heats the surface of the glass substrate 30 on the side opposite to the panel heater 28.
【００２８】[0028]
【発明の効果】以上述べた如く本発明によれば、基板加
熱装置の軽量化が図れる為、製作コストの低減化を図る
ことができると共に一度に予熱する基板の枚数を増加さ
せ生産性の向上を図ることが可能となる。又、基板を加
熱するのは主にパネルヒータであり、該パネルヒータは
温度変化に対する応答性が良い。従って、基板加熱装置
の立上げ時にパネルヒータが短時間で設定温度に達し、
基板加熱装置の稼働率の向上が図れる。又、基板の温度
にバラツキが生じることがなく、次のプロセスに於い
て、膜質が均一となる等成膜特性の向上を図ることがで
きる等種々の優れた効果を発揮する。As described above, according to the present invention, the weight of the substrate heating device can be reduced, so that the manufacturing cost can be reduced and the number of substrates to be preheated at one time can be increased to improve the productivity. Can be achieved. The panel heater mainly heats the substrate, and the panel heater has good responsiveness to a temperature change. Therefore, the panel heater reaches the set temperature in a short time when the substrate heating device is started up,
The operation rate of the substrate heating device can be improved. Further, various excellent effects are exhibited such that the temperature of the substrate does not vary, and in the next process, the film quality can be improved such as uniform film quality.
【図１】本発明の実施の形態を示す正面図である。FIG. 1 is a front view showing an embodiment of the present invention.
【図２】半導体製造装置の概略を示す説明図である。FIG. 2 is an explanatory view schematically showing a semiconductor manufacturing apparatus.
【図３】従来例を示す斜視図である。FIG. 3 is a perspective view showing a conventional example.
【図４】従来例を示す正面図である。FIG. 4 is a front view showing a conventional example.
【図５】従来例を示す平面図である。FIG. 5 is a plan view showing a conventional example.
【図６】他の従来例を示す正面図である。FIG. 6 is a front view showing another conventional example.
２５ 基板加熱装置 ２６ 側板 ２７ 均熱板 ２８ パネルヒータ ２９ 基板受材 ３０ ガラス基板 Reference Signs List 25 substrate heating device 26 side plate 27 soaking plate 28 panel heater 29 substrate receiving material 30 glass substrate
フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 21/68 Ｈ０１Ｌ 21/302 Ｂ Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/68 H01L 21/302 B
Claims (1)
する基板加熱装置に於いて、前記基板と基板とが成す複
数段の空間にパネルヒータと間接加熱板とを交互に配設
したことを特徴とする基板加熱装置。In a substrate heating apparatus for heating a plurality of substrates mounted in a horizontal layer, a panel heater and an indirect heating plate are alternately arranged in a plurality of spaces formed by the substrate and the substrate. A substrate heating device characterized by the above-mentioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6617798A JPH11251323A (en) | 1998-03-02 | 1998-03-02 | Substrate heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6617798A JPH11251323A (en) | 1998-03-02 | 1998-03-02 | Substrate heating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11251323A true JPH11251323A (en) | 1999-09-17 |
Family
ID=13308314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6617798A Pending JPH11251323A (en) | 1998-03-02 | 1998-03-02 | Substrate heating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11251323A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002221394A (en) * | 2001-01-24 | 2002-08-09 | Showa Mfg Co Ltd | Heating device for electronic component |
| US11486035B2 (en) * | 2011-03-17 | 2022-11-01 | Versarien Plc | Graphene synthesis chamber and method of synthesizing graphene by using the same |
-
1998
- 1998-03-02 JP JP6617798A patent/JPH11251323A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002221394A (en) * | 2001-01-24 | 2002-08-09 | Showa Mfg Co Ltd | Heating device for electronic component |
| US11486035B2 (en) * | 2011-03-17 | 2022-11-01 | Versarien Plc | Graphene synthesis chamber and method of synthesizing graphene by using the same |
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