JP2937194B1 - Substrate heating device - Google Patents
Substrate heating deviceInfo
- Publication number
- JP2937194B1 JP2937194B1 JP20085598A JP20085598A JP2937194B1 JP 2937194 B1 JP2937194 B1 JP 2937194B1 JP 20085598 A JP20085598 A JP 20085598A JP 20085598 A JP20085598 A JP 20085598A JP 2937194 B1 JP2937194 B1 JP 2937194B1
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heater
- heating
- slot
- substrate heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
【要約】
【課題】 過加熱によるトランジスタ特性の劣化を最小
限に抑え、コストおよび電力消費量を少なく抑えること
のできる基板加熱装置を提供する。
【解決手段】 基板加熱カセットは、上下二枚の仕切板
の上下方向中間にヒータが設けられ、上側の仕切板と前
記ヒータとの間および該ヒータと下側の仕切板との間に
は、それぞれ基板載置部の設けられた第１のスロットお
よび第２のスロットが形成された加熱処理部が上下方向
に複数段設けられていることを特徴とする。To provide a substrate heating device capable of minimizing deterioration of transistor characteristics due to overheating and reducing cost and power consumption. SOLUTION: The substrate heating cassette is provided with a heater in the middle of the upper and lower partition plates in the vertical direction, between the upper partition plate and the heater and between the heater and the lower partition plate. A plurality of heat treatment sections each having a first slot and a second slot provided with a substrate mounting section are provided in a vertical direction.
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体のＳｉウ
ェハや液晶ディスプレイ（ＬＣＤ）のガラス基板などの
基板に、化学気相成長（ＣＶＤ）および物理気相成長
（ＰＶＤ）による薄膜の生成、ドライエッチング等の処
理で半導体回路を形成する前処理として基板を予熱処理
するための基板加熱装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a thin film on a substrate such as a semiconductor Si wafer or a glass substrate of a liquid crystal display (LCD) by chemical vapor deposition (CVD) and physical vapor deposition (PVD). The present invention relates to a substrate heating apparatus for preheating a substrate as a pretreatment for forming a semiconductor circuit by a process such as etching.
【０００２】[0002]
【従来の技術】従来の基板加熱装置１は、例えば図３に
示すように、真空槽２とこの真空槽２内部を上下方向に
移動可能な基板加熱カセット３０とを主な要素として構
成されている。基板加熱カセット３０は、上下に二つの
ヒータ３１が設けられ、このヒータ３１とヒータ３１と
の間に基板３２を載置するための基板載置部３３の設け
られた加熱処理部３４が上下方向に６段設けられてい
る。それぞれのヒータ３１は、ヒータ支持枠３５により
それぞれ連結支持されている。また、ヒータ支持枠３５
の下部には、昇降機（図示せず）のロッド３６が連結さ
れており、基板加熱カセット３０が真空槽２内部を上下
方向に移動できるようなっている。2. Description of the Related Art As shown in FIG. 3, for example, a conventional substrate heating apparatus 1 is mainly composed of a vacuum chamber 2 and a substrate heating cassette 30 capable of moving vertically inside the vacuum chamber 2. I have. The substrate heating cassette 30 is provided with two heaters 31 on the upper and lower sides, and a heating processing section 34 provided with a substrate mounting section 33 for mounting a substrate 32 between the heaters 31 is arranged in a vertical direction. Are provided in six stages. Each heater 31 is connected and supported by a heater support frame 35. Also, the heater support frame 35
A rod 36 of an elevator (not shown) is connected to a lower portion of the vacuum chamber 2 so that the substrate heating cassette 30 can move vertically inside the vacuum chamber 2.
【０００３】次に、基板加熱装置により行われる予熱処
理前後の処理工程について、図４を用いて説明する。Ｃ
ＶＤ，ＰＶＤ，ドライエッチング等のプロセス処理を行
う従来の装置では、室内が真空であるロードロック室２
０内の複数枚の基板を、室内が装置稼働中常に真空であ
る搬送室２１内の真空基板搬送ロボット２２により、ロ
ードロック２０室から搬出し、搬送室２１を介して、室
内が装置稼働中常に真空である基板加熱装置１に搬入す
る。基板加熱装置１の内部にある基板加熱カセット３０
は、複数枚の基板３２を収納し、収納された基板３２は
それぞれ上下のヒータ３１によって加熱される。また、
装置稼働中常に、基板３２を処理温度に加熱しようと加
熱動作を行っている。つまり、基板加熱装置１に搬入さ
れた複数枚の基板３２は、それぞれの搬入直後から加熱
が開始される。基板加熱装置１に搬入された基板３２に
おいて処理温度までの加熱の判断は、温度分布を鑑み
て、予め設定しておいた加熱時間により行う。基板加熱
装置１に搬入後、設定加熱時間を経過するまで基板加熱
装置１内で留まっていた基板３２は、次の処理であるプ
ロセス処理を行う処理室２３のうちプロセス処理基板待
ちの処理室２３があれば、搬送室２１内の真空基板搬送
ロボット２２により搬出され、搬送室２１を介して、処
理室２３に搬入され、プロセス処理が行われる。一方、
処理室２３においてプロセス処理基板待ちの処理室２３
がない場合は、処理室２３がプロセス処理基板待ちとな
るまで、基板３２が基板加熱装置１から搬出されず留ま
ったままとなり、設定加熱時間以上の時間を加熱される
ことになる。次に、プロセス処理完了後の基板３２は、
搬送室２１内の真空基板搬送ロボット２２により搬出さ
れ、搬送室２１を介して、室内が真空であるロードロッ
ク２０室に搬入される。Next, processing steps before and after the pre-heat treatment performed by the substrate heating apparatus will be described with reference to FIG. C
In a conventional apparatus for performing a process such as VD, PVD, or dry etching, the load lock chamber 2 is a vacuum chamber.
A plurality of substrates in 0 are unloaded from the load lock 20 chamber by the vacuum substrate transfer robot 22 in the transfer chamber 21 which is always in a vacuum while the apparatus is in operation, and the apparatus is operated in the room via the transfer chamber 21. It is carried into the substrate heating apparatus 1 which is always in a vacuum. Substrate heating cassette 30 inside substrate heating apparatus 1
Accommodates a plurality of substrates 32, and the stored substrates 32 are heated by upper and lower heaters 31, respectively. Also,
During the operation of the apparatus, a heating operation is performed to heat the substrate 32 to the processing temperature. That is, the heating of the plurality of substrates 32 carried into the substrate heating device 1 is started immediately after each of the substrates 32 is carried. The heating of the substrate 32 carried into the substrate heating apparatus 1 to the processing temperature is determined based on a preset heating time in consideration of the temperature distribution. After being carried into the substrate heating apparatus 1, the substrate 32 remaining in the substrate heating apparatus 1 until the set heating time has elapsed is a processing chamber 23 waiting for a process processing substrate among processing chambers 23 for performing the next processing processing. If there is, the substrate is unloaded by the vacuum substrate transfer robot 22 in the transfer chamber 21, transferred into the processing chamber 23 via the transfer chamber 21, and processed. on the other hand,
Processing chamber 23 waiting for processing substrate in processing chamber 23
If there is no substrate, the substrate 32 is not carried out of the substrate heating apparatus 1 and stays there until the processing chamber 23 waits for the processing substrate, and the substrate 32 is heated for a time longer than the set heating time. Next, the substrate 32 after the process processing is completed
The wafer is unloaded by the vacuum substrate transfer robot 22 in the transfer chamber 21, and is loaded via the transfer chamber 21 into the load lock 20 in which the chamber is vacuum.
【０００４】ここで、前述の処理室２３においてプロセ
ス処理基板待ちの処理室２３がない場合に、基板３２が
基板加熱装置１から搬出されず留まったままとなり設定
加熱時間以上の時間を加熱されることにより、すでに基
板３２に作り込まれたＴＦＴの特性を劣化する問題があ
る。これは、基板３２が基板加熱装置１搬入直後から加
熱され、かつ、特に装置への基板投入初期において基板
加熱装置１への複数枚の基板３２の搬入がほぼ同時行わ
れる、つまり、基板加熱装置１へ搬入された複数枚の基
板３２はほぼ同時に加熱が開始され、一方、プロセス処
理を行う処理室２３における基板３２の処理は基板１枚
ずつ行うためである。ここで、基板加熱装置１への複数
枚の基板３２の搬入が「ほぼ同時」といえるのは、基板
加熱装置１への基板３２の搬入間隔時間が処理室２３で
のプロセス処理時間に比べ約１／１０以下と短いからで
ある。加熱され過ぎた時間は、プロセス処理時間とプロ
セス処理を待った基板３２の枚数との積になり、例え
ば、プロセス処理が保護絶縁膜成膜の場合、トランジス
タ特性への影響が大きくなる。結果、装置の生産能力が
プロセス処理室律速の場合、基板３２は基板加熱装置１
において設定加熱時間以上に加熱され続け、トランジス
タ特性に悪影響を与えてしまう。Here, when there is no processing chamber 23 waiting for a processing substrate in the above-described processing chamber 23, the substrate 32 is not carried out of the substrate heating apparatus 1 and stays there, and is heated for a time longer than a set heating time. As a result, there is a problem that the characteristics of the TFT already formed on the substrate 32 are deteriorated. This is because the substrate 32 is heated immediately after the substrate heating device 1 is loaded, and the plurality of substrates 32 are loaded into the substrate heating device 1 almost simultaneously at the initial stage of loading the substrate into the device. The heating of the plurality of substrates 32 carried into the substrate 1 is started almost simultaneously, while the processing of the substrates 32 in the processing chamber 23 for performing the processing is performed one by one. Here, it can be said that the loading of the plurality of substrates 32 into the substrate heating apparatus 1 is “substantially simultaneously” because the interval between the loading of the substrates 32 into the substrate heating apparatus 1 is shorter than the processing time in the processing chamber 23. This is because it is as short as 1/10 or less. The time overheated is the product of the processing time and the number of substrates 32 waiting for the processing. For example, in the case where the processing is the formation of a protective insulating film, the influence on the transistor characteristics increases. As a result, when the production capacity of the apparatus is limited by the process chamber, the substrate 32 is
In this case, heating is continued for more than the set heating time, which adversely affects transistor characteristics.
【０００５】そこで、基板加熱装置１での過加熱による
トランジスタ特性の劣化を回避するための対策として、
基板３２を加熱するヒータ３１をそれぞれの基板３２に
対して別個に独立して加熱動作させることが考えられ
る。Therefore, as a measure for avoiding deterioration of transistor characteristics due to overheating in the substrate heating device 1,
It is conceivable that the heaters 31 for heating the substrates 32 are individually and independently heated for the respective substrates 32.
【０００６】しかしながら、ヒータ３１をそれぞれ独立
してオン・オフ動作させたとしても、上下の加熱処理部
３４の基板３２に対してのみならず、その他の基板３２
に対しても熱影響を与えてしまい、過加熱によってトラ
ンジスタ特性に悪影響を与えてしまうという問題点があ
った。また、全ヒータ３１を一度にオン・オフ動作させ
る場合、電流変化値が大きいために装置を構成する他の
機器に大きな影響を与えてしまう。従って、この電流変
化を吸収する機器を追加したり、あるいはこれに耐えう
る特別の機器を使用することにより、装置のコストアッ
プや消費電力の増大を招くという問題点があった。However, even if the heaters 31 are turned on and off independently of each other, not only the substrates 32 of the upper and lower heat treatment units 34 but also other substrates 32
However, there is a problem in that the transistor characteristics are adversely affected by overheating, and the transistor characteristics are adversely affected by overheating. Further, when all the heaters 31 are turned on and off at one time, the current change value is large, which greatly affects other devices constituting the apparatus. Therefore, there is a problem in that the cost of the device is increased and the power consumption is increased by adding a device that absorbs the current change or by using a special device that can withstand the change.
【０００７】[0007]
【発明が解決しようとする課題】この発明は、上記の事
情に鑑みてなされたもので、過加熱によるトランジスタ
特性の劣化を最小限に抑え、コストおよび電力消費量を
少なく抑えることのできる基板加熱装置を提供すること
を目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has been made in consideration of the above circumstances. Thus, a substrate heating method capable of minimizing deterioration of transistor characteristics due to overheating and reducing cost and power consumption. It is intended to provide a device.
【０００８】[0008]
【課題を解決するための手段】この発明の基板加熱装置
では、上記課題を解決するため、以下の手段を採用し
た。すなわち、請求項１記載の基板加熱装置によれば、
真空槽と該真空槽内部を上下方向に移動可能な基板加熱
カセットとを具備する基板加熱装置において、前記基板
加熱カセットは、上下二枚の仕切板の上下方向中間にヒ
ータが設けられ、上側の仕切板と前記ヒータとの間およ
び該ヒータと下側の仕切板との間には、それぞれ基板載
置部の設けられた第１のスロットおよび第２のスロット
が形成された加熱処理部が上下方向に複数段設けられて
いることを特徴とする。請求項２記載の基板加熱装置に
よれば、前記ヒータの加熱動作と非加熱動作とを制御す
る制御部を有することを特徴とする。In order to solve the above-mentioned problems, the substrate heating apparatus of the present invention employs the following means. That is, according to the substrate heating device of the first aspect,
In a substrate heating apparatus comprising a vacuum chamber and a substrate heating cassette movable vertically in the vacuum chamber, the substrate heating cassette is provided with a heater in the middle of the upper and lower partition plates in the vertical direction, Between the partition plate and the heater and between the heater and the lower partition plate, a heat treatment section having a first slot and a second slot provided with a substrate mounting portion is vertically moved. It is characterized in that a plurality of stages are provided in the direction. According to a second aspect of the present invention, the substrate heating apparatus includes a control unit that controls a heating operation and a non-heating operation of the heater.
【０００９】[0009]
【発明の実施の形態】以下、この発明の実施の形態を、
図面に基づいて説明する。図１に示すように、ヒータ５
の加熱動作と非加熱動作とを時間差をつけて順次自動的
に制御する制御部１０を有する基板加熱装置１におい
て、基板加熱装置１は、真空槽２とこの真空槽２内部を
上下方向に移動可能な基板加熱カセット３とを主な要素
として構成されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described.
This will be described with reference to the drawings. As shown in FIG.
In the substrate heating apparatus 1 having the control unit 10 for automatically and sequentially controlling the heating operation and the non-heating operation with a time difference, the substrate heating apparatus 1 moves the vacuum tank 2 and the inside of the vacuum tank 2 in the vertical direction. And a possible substrate heating cassette 3 as main components.
【００１０】基板加熱カセット３は、上下二枚の仕切板
４の上下方向中間にヒータ５が設けられ、上側の仕切板
４とヒータ５との間およびこのヒータ５と下側の仕切板
４との間には、それぞれ基板載置部６の設けられた第１
のスロットＳ１および第２のスロットＳ２が形成された
加熱処理部７が上下方向に３段設けられている。The substrate heating cassette 3 is provided with a heater 5 at the middle in the vertical direction between the upper and lower two partition plates 4, between the upper partition plate 4 and the heater 5, and between the heater 5 and the lower partition plate 4. Between the first and second substrates provided with the substrate mounting portions 6, respectively.
The heat treatment section 7 in which the first slot S1 and the second slot S2 are formed is provided vertically in three stages.
【００１１】詳しくは、基板８を１枚収納するスロット
を６段有し、ヒータ５はそれぞれ基板８の間に対して１
つおきに合計３個配置され、ヒータ５の加熱動作はその
ヒータ５の上下の基板８のみに作用するようになってい
る。また、ヒータ５はそれぞれ別個にオン・オフ動作で
き、例えば、上から２番目のヒータ５をオンし、その他
のヒータ５をオフにした場合、２番目のヒータ５の上下
に搬入された基板８のみが輻射熱により加熱され、その
他の基板８への加熱は非常に小さいので、ヒータ５の上
下に搬入された基板８毎別個に基板の加熱することがで
き、そのヒータ５をオフからオンする時刻は、基板８が
基板加熱装置１から搬出される時刻から設定加熱時間を
遡った時刻であり、また、ヒータ５をオンからオフする
時刻は基板８が基板加熱装置１から搬出される時刻であ
る。また、仕切板４は断熱性に優れた材質のものが好ま
しい。このように構成することによって、ヒータ５の数
を従来のほぼ半数とすることができ、また、仕切板４に
より隣接する加熱処理部７の基板３２はもちろん、その
他の加熱処理部７の基板３２への熱影響を最小限に抑え
ながら、それぞれの加熱処理部７ごとにヒータ３１のオ
ン・オフ動作ができるようになっている。More specifically, there are six slots for accommodating one substrate 8, and the heaters 5 are arranged one by one between the substrates 8.
A total of three heaters are arranged every other one, and the heating operation of the heater 5 acts only on the substrates 8 above and below the heater 5. Further, the heaters 5 can be individually turned on and off individually. For example, when the second heater 5 from the top is turned on and the other heaters 5 are turned off, the substrate 8 loaded above and below the second heater 5 is turned off. Since only the substrate 8 is heated by the radiant heat and the heating of the other substrates 8 is very small, each substrate 8 loaded above and below the heater 5 can be heated separately, and the time when the heater 5 is turned on from off is turned on. Is the time when the set heating time is traced back from the time when the substrate 8 is unloaded from the substrate heating device 1, and the time when the heater 5 is turned off from on is the time when the substrate 8 is unloaded from the substrate heating device 1. . Further, the partition plate 4 is preferably made of a material having excellent heat insulating properties. With such a configuration, the number of heaters 5 can be reduced to approximately half of the conventional heaters. Further, the substrate 32 of the other heat processing unit 7 as well as the substrate 32 of the adjacent heat processing unit 7 by the partition plate 4 can be used. The heater 31 can be turned on / off for each of the heat treatment sections 7 while minimizing the heat effect on the heaters.
【００１２】次に、上記の構成からなる基板加熱装置１
の作用について、再び図４を用いて説明する。室内が真
空であるロードロック室２０内にある基板を、室内が装
置稼働中常に真空である搬送室２１内の真空基板搬送ロ
ボット２２により、ロードロック室２０から搬出し、搬
送室２１を介して、室内が装置稼働中常に真空である基
板加熱装置１に１枚ずつ搬入し、前述と同様の動作を繰
り返し、合計６枚の基板を基板加熱装置１に搬入する。
基板加熱装置１の内部にあるヒータは基板が搬入される
とき加熱をオフにしており、第１スロットと第２スロッ
トにそれぞれ１枚目と２枚目の基板が搬入し終えた時点
で第１スロットと第２スロットとの間の第１ヒータをオ
ンにする。次に、第３スロットと第４スロットにそれぞ
れ搬入された３枚目と４枚目の基板は、第１スロットと
第２スロットにそれぞれ搬入された１枚目と２枚目の基
板とは異なり、その３枚目と４枚目の基板が搬出される
までの時間と、基板の設定加熱時間との差から加熱が開
始されるまで時間を算出し、加熱開始時間になった後、
第３スロットと第４スロットとの間の第２ヒータをオン
する。第３スロットと第４スロットにそれぞれ搬入され
た３枚目と４枚目の基板と同様に、第５スロットと第６
スロットにそれぞれ５枚目と６枚目の基板が搬入され、
加熱開始時間になった後、第５スロットと第６スロット
との間の第３ヒータ５をオンにする。設定時間だけ加熱
した第１スロットと第２スロットにそれぞれある１枚目
と２枚目の基板は、前述の搬送室２１内の真空基板搬送
ロボット２２により、基板加熱装置１から搬出され、前
記搬送室２１を介して、基板をプラズマＣＶＤ処理する
処理室２３にそれぞれ１枚ずつ搬入され、一方、基板が
搬出された第１スロットと第２スロットのと間にある第
１ヒータはオフにされる。スロット内に基板が存在しな
い空スロットとなった第１スロットと第２スロットに対
し、７枚目と８枚目の基板が、第３スロットと第４スロ
ットに搬入された３枚目と４枚目の基板と同様に、第１
スロットと第２スロットに搬入され、加熱開始時間にな
った後、第１スロットと第２スロットとの間の第１ヒー
タをオンにする。以降、空スロットが発生する度に同様
の動作が繰り返し行われる。次に、プロセス処理完了後
の前記基板は、前記搬送室２１内の真空基板搬送ロボッ
ト２２により搬出され、搬送室２１を介して、室内が真
空であるロードロック室２０に１枚ずつ搬入される。Next, the substrate heating apparatus 1 having the above configuration
Will be described again with reference to FIG. The substrate in the load lock chamber 20 where the chamber is in a vacuum is unloaded from the load lock chamber 20 by the vacuum substrate transfer robot 22 in the transfer chamber 21 where the chamber is always in the vacuum during the operation of the apparatus, and is transferred through the transfer chamber 21. Then, one by one is carried into the substrate heating apparatus 1 in which the room is always in a vacuum while the apparatus is in operation, and the same operation as described above is repeated, so that a total of six substrates are carried into the substrate heating apparatus 1.
The heater inside the substrate heating apparatus 1 turns off the heating when the substrate is carried in, and the first and second substrates are brought into the first slot and the second slot, respectively. The first heater between the slot and the second slot is turned on. Next, the third and fourth substrates carried in the third and fourth slots, respectively, are different from the first and second substrates carried in the first and second slots, respectively. Calculate the time until the heating is started from the difference between the time until the third and fourth substrates are carried out and the set heating time of the substrate, and after the heating start time,
The second heater between the third slot and the fourth slot is turned on. Similarly to the third and fourth substrates loaded into the third and fourth slots, respectively, the fifth and sixth slots are used.
The fifth and sixth substrates are loaded into the slots, respectively.
After the heating start time, the third heater 5 between the fifth slot and the sixth slot is turned on. The first and second substrates in the first and second slots heated for the set time, respectively, are unloaded from the substrate heating apparatus 1 by the vacuum substrate transfer robot 22 in the transfer chamber 21 and transferred. Each of the substrates is carried one by one into a processing chamber 23 for performing a plasma CVD process on the substrate via the chamber 21, while the first heater between the first slot and the second slot from which the substrate is unloaded is turned off. . In contrast to the first and second slots, which are empty slots where no board is present in the slots, the seventh and eighth boards are replaced by the third and fourth boards carried into the third and fourth slots. Like the eye substrate, the first
After being carried into the slot and the second slot and the heating start time has come, the first heater between the first slot and the second slot is turned on. Thereafter, every time an empty slot occurs, the same operation is repeated. Next, the substrates after the completion of the process are carried out one by one by the vacuum substrate transfer robot 22 in the transfer chamber 21, and are loaded one by one into the load lock chamber 20 in which the chamber is vacuum via the transfer chamber 21. .
【００１３】以上の動作をタイムチャートにすると図２
のようになる。縦軸にそれぞれの基板の位置、横軸に時
間をとり、それぞれの基板について、ある時間における
位置を示している。ここで位置を示す縦軸上のＬはロー
ドロック室２０、Ｈは基板加熱装置１、Ｐは処理室２３
に基板が存在していることを示し、ＬからＨまでの２枚
の基板の搬送時間をＴ１、Ｈでの加熱オフ時間つまりヒ
ータオンによる加熱を開始するまでの時間を第１スロッ
トと第２スロットとの間の第１ヒータ，第３スロットと
第４スロットとの間の第２ヒータ，第５スロットと第６
スロットとの間の第３ヒータでそれぞれＣ１（ｔ），Ｃ
２（ｔ），Ｃ３（ｔ）とし、加熱オン時間つまり設定加
熱時間をＴｈ、ＨからＰへの２枚の基板の搬送時間をＴ
２、ＰでのプラズマＣＶＤプロセス処理時間をＴｐ、Ｐ
からＬへの２枚の基板の搬送時間をＴ３とする。Ｃ１
（ｔ）の初期値を０としておき、１枚目と２枚目の基板
がそれぞれ第１スロットと第２スロットに搬入された直
後から加熱されるようにする。１枚目と２枚目の基板が
それぞれ第１スロットと第２スロットに搬入され即加熱
が開始された時点から時間Ｔ１後に、３枚目と４枚目の
基板それぞれの第３スロットと第４スロットへの搬送が
完了し、加熱を開始するまでの時間Ｃ２（ｔ）は図２か
らも明らかなように、Ｔｈ＋Ｔ２＋Ｔｐ＋Ｔ３−Ｔｈ−
Ｔ１＝Ｔ２＋Ｔｐ＋Ｔ３−Ｔ１となり、さらに、第１ス
ロットと第２スロットで基板の加熱を開始した後も、Ｃ
１（ｔ）をカウントし続けるようにすれば、Ｃ２（ｔ）
＝Ｃ１（ｔ）＋Ｔ２＋Ｔｐ＋Ｔ３となる。第３スロット
と第４スロットの加熱開始時間Ｃ２（ｔ）と同様に、第
５スロットと第６スロットの加熱開始時間Ｃ３（ｔ）
は、図２から明らかなように、Ｃ２（ｔ）＋Ｔｈ＋Ｔ２
＋Ｔｐ＋Ｔ３−Ｔｈ＝Ｃ２（ｔ）＋Ｔ２＋Ｔｐ＋Ｔ３と
なり、さらに、第１スロットと第２スロットの加熱開始
時間Ｃ１（ｔ）はＣ３（ｔ）＋Ｔ２＋Ｔｐ＋Ｔ３とな
る。各スロットに搬入された基板は、各スロット毎に上
記の加熱開始時間Ｃ１（ｔ），Ｃ２（ｔ），Ｃ３（ｔ）
を経て、加熱が開始され、設定加熱時間Ｔｈ後、次の処
理のＣＶＤプロセス処理装置での処理のため搬出され、
一方、そのスロットは加熱動作が停止し、次の基板が搬
入され、以後この動作が繰り返されることになる。FIG. 2 is a time chart showing the above operation.
become that way. The vertical axis indicates the position of each substrate and the horizontal axis indicates time, and indicates the position of each substrate at a certain time. Here, L on the vertical axis indicating the position is the load lock chamber 20, H is the substrate heating device 1, and P is the processing chamber 23.
Indicates that a substrate is present, and the transfer time of the two substrates from L to H is T1, and the heating-off time at H, that is, the time until heating by the heater-on is started, is the first slot and the second slot. , A second heater between the third and fourth slots, a fifth heater and a sixth
C1 (t) and C1 (t) at the third heater between
2 (t) and C3 (t), the heating ON time, that is, the set heating time is Th, and the transport time of the two substrates from H to P is T.
2. The plasma CVD process time at P is Tp, P
The transfer time of the two substrates from L to L is T3. C1
The initial value of (t) is set to 0, and the first and second substrates are heated immediately after being loaded into the first and second slots, respectively. After a time T1 from the time when the first and second substrates are loaded into the first and second slots and immediate heating is started, respectively, the third and fourth substrates of the third and fourth substrates, respectively. The time C2 (t) from the completion of the transfer to the slot to the start of heating is Th + T2 + Tp + T3-Th− as is clear from FIG.
T1 = T2 + Tp + T3-T1, and after starting the heating of the substrate in the first slot and the second slot, C
By keeping counting 1 (t), C2 (t)
= C1 (t) + T2 + Tp + T3. Similarly to the heating start time C2 (t) of the third slot and the fourth slot, the heating start time C3 (t) of the fifth slot and the sixth slot.
Is C2 (t) + Th + T2, as is apparent from FIG.
+ Tp + T3-Th = C2 (t) + T2 + Tp + T3, and the heating start time C1 (t) of the first and second slots is C3 (t) + T2 + Tp + T3. The substrates loaded into each slot are subjected to the heating start times C1 (t), C2 (t), C3 (t) for each slot.
, Heating is started, and after the set heating time Th, the next processing is carried out for processing in the CVD processing apparatus,
On the other hand, the heating operation is stopped in that slot, the next substrate is carried in, and this operation is repeated thereafter.
【００１４】また、この発明の他の実施の形態として、
上述の実施の形態においては、基板加熱装置１を１室、
この基板加熱装置１内のスロット数を６段、ＣＶＤプロ
セス処理室２３を２室としたが、このスロット数は６段
のみならず、基板加熱装置１を１室、この基板加熱装置
１内のスロット数を（２×ｓ）段、ＣＶＤプロセス処理
室を２室としても、第（２×ｎ−１）スロットと第（２
×ｎ）スロットの間の第ｎヒータにより基板が加熱を開
始するまでの時間は、２≦ｎ≦ｓのスロットではＣｎ
（ｔ）＝Ｃｎ−１（ｔ）＋Ｔ２＋Ｔｐ＋Ｔ３、ｎ＝１つ
まり第１スロットと第２スロットの間の第１ヒータでは
Ｃ１（ｔ）＝Ｃｓ（ｔ）＋Ｔ２＋Ｔｐ＋Ｔ３となる。加
えて、ＣＶＤプロセス処理室２３がさらに多数の場合で
も、実施可能である。Further, as another embodiment of the present invention,
In the above-described embodiment, the substrate heating device 1 has one chamber,
The number of slots in the substrate heating apparatus 1 was six, and the number of the CVD process chambers 23 was two. However, the number of slots is not limited to six, and one chamber of the substrate heating apparatus 1 was used. Even if the number of slots is (2 × s) and the number of CVD process chambers is two, the (2 × n−1) th slot and the (2 × n−1)
Xn) The time required for the substrate to start heating by the n-th heater during the slot is Cn in the slot where 2 ≦ n ≦ s.
(T) = Cn-1 (t) + T2 + Tp + T3, where n = 1, that is, C1 (t) = Cs (t) + T2 + Tp + T3 for the first heater between the first slot and the second slot. In addition, the present invention can be implemented even when the number of the CVD processing chambers 23 is larger.
【００１５】上記の基板加熱装置によれば、隣接する加
熱処理室７からのヒータ５熱の影響が仕切板４により極
めて小さく抑えられるので、過加熱によるトランジスタ
特性の劣化を最小限に抑えることができる。また、ヒー
タ５が各加熱処理室７に対して一つずつ配置されること
により、ヒータ５の数が少なくてすむ。従って、全ヒー
タ５を一度にオン・オフ動作させても、その電流変化が
小さいので、装置を構成する他の機器に対しても影響を
与えるがなく、しかもコストおよび電力消費量を少なく
抑えることができる。さらに、基板加熱カセット３の最
上段スロット上側と最下段スロット下側には、ヒータ５
が配置されていないので、基板加熱装置１全体を小型化
できる。さらにまた、ヒータ５の加熱動作と非加熱動作
とを時間差を設けて順次自動的に制御する制御部１０を
有しているので、作業効率を飛躍的に向上させることが
できる。According to the above-described substrate heating apparatus, the influence of the heat from the heater 5 from the adjacent heat treatment chamber 7 can be minimized by the partition plate 4, so that deterioration of transistor characteristics due to overheating can be minimized. it can. Further, since the heaters 5 are arranged one by one for each of the heat treatment chambers 7, the number of the heaters 5 can be reduced. Therefore, even if all the heaters 5 are turned on and off at once, the change in the current is small, so that there is no effect on other devices constituting the apparatus, and the cost and power consumption are reduced. Can be. Further, a heater 5 is provided above the uppermost slot and below the lowermost slot of the substrate heating cassette 3.
Are not arranged, the entire substrate heating apparatus 1 can be reduced in size. Furthermore, since the control unit 10 that automatically controls the heating operation and the non-heating operation of the heater 5 sequentially with a time difference is provided, the working efficiency can be significantly improved.
【００１６】[0016]
【発明の効果】この発明の基板加熱装置によれば、以下
の効果が得られる。請求項１記載の基板加熱装置によれ
ば、基板加熱カセットは、上下二枚の仕切板の上下方向
中間にヒータが設けられ、上側の仕切板とヒータとの間
およびこのヒータと下側の仕切板との間には、それぞれ
基板載置部の設けられた第１のスロットおよび第２のス
ロットが形成された加熱処理部が上下方向に複数段設け
られているので、過加熱によるトランジスタ特性の劣化
を最小限に抑えると共に、コストおよび電力消費量も少
なく抑えることができるという優れた効果を得ることが
できる。According to the substrate heating apparatus of the present invention, the following effects can be obtained. According to the substrate heating apparatus of the first aspect, the substrate heating cassette is provided with a heater in the middle of the upper and lower partition plates in the vertical direction, between the upper partition plate and the heater, and between the heater and the lower partition plate. Since a plurality of heat treatment sections each having a first slot and a second slot provided with a substrate mounting section are provided vertically in a plurality of stages between the plates, the transistor characteristics due to overheating are reduced. It is possible to obtain an excellent effect that the deterioration and the cost and the power consumption can be minimized while the deterioration is minimized.
【００１７】請求項２記載の基板加熱装置によれば、ヒ
ータの加熱動作と非加熱動作とを制御する制御部を有す
るので、基板加熱装置内での待機時間を最小にし、作業
効率を向上させることができるという優れた効果を得る
ことができる。According to the second aspect of the present invention, since the control unit for controlling the heating operation and the non-heating operation of the heater is provided, the standby time in the substrate heating apparatus is minimized, and the working efficiency is improved. The excellent effect that can be obtained can be obtained.
【図１】 この発明の一実施の形態を示す図であって、
基板加熱装置の概略的な構成を示す配置図である。FIG. 1 is a diagram showing an embodiment of the present invention,
FIG. 3 is a layout diagram illustrating a schematic configuration of a substrate heating device.
【図２】 同各加熱処理部で熱処理される基板のプロセ
ス処理工程のタイムチャートである。FIG. 2 is a time chart of a processing step of a substrate to be heat-treated in each of the heat treatment units.
【図３】 従来の基板加熱装置の概略的な構成を示す配
置図である。FIG. 3 is a layout diagram showing a schematic configuration of a conventional substrate heating apparatus.
【図４】 プロセス処理装置全体の概略的な配置図であ
る。FIG. 4 is a schematic layout diagram of the entire processing apparatus.
１ 基板加熱装置 ２ 真空槽 ３ 基板加熱カセット ４ 仕切板 ５ ヒータ ６ 基板載置部 ７ 加熱処理部 １０ 制御部 Ｓ１ 第１のスロット Ｓ２ 第２のスロット DESCRIPTION OF SYMBOLS 1 Substrate heating apparatus 2 Vacuum tank 3 Substrate heating cassette 4 Partition plate 5 Heater 6 Substrate placement part 7 Heat processing part 10 Control part S1 1st slot S2 2nd slot
フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) C23C 16/00 - 16/56 C23C 14/00 - 14/58 H01L 21/203 - 21/22 H01L 21/324 H01L 21/68 Continuation of the front page (58) Field surveyed (Int.Cl. 6 , DB name) C23C 16/00-16/56 C23C 14/00-14/58 H01L 21/203-21/22 H01L 21/324 H01L 21 / 68
Claims (2)
可能な基板加熱カセットとを具備する基板加熱装置にお
いて、 前記基板加熱カセットは、上下二枚の仕切板の上下方向
中間にヒータが設けられ、上側の仕切板と前記ヒータと
の間および該ヒータと下側の仕切板との間には、それぞ
れ基板載置部の設けられた第１のスロットおよび第２の
スロットが形成された加熱処理部が上下方向に複数段設
けられていることを特徴とする基板加熱装置。1. A substrate heating apparatus comprising: a vacuum chamber; and a substrate heating cassette capable of moving vertically inside the vacuum chamber, wherein the substrate heating cassette includes a heater in a vertical middle of two upper and lower partition plates. A first slot and a second slot provided with a substrate mounting portion were formed between the upper partition plate and the heater and between the heater and the lower partition plate, respectively. A substrate heating apparatus, wherein a plurality of heat treatment units are provided in a vertical direction.
制御する制御部を有することを特徴とする請求項１に記
載の基板加熱装置。2. The substrate heating apparatus according to claim 1, further comprising a control unit for controlling a heating operation and a non-heating operation of the heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20085598A JP2937194B1 (en) | 1998-07-15 | 1998-07-15 | Substrate heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20085598A JP2937194B1 (en) | 1998-07-15 | 1998-07-15 | Substrate heating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2937194B1 true JP2937194B1 (en) | 1999-08-23 |
| JP2000034570A JP2000034570A (en) | 2000-02-02 |
Family
ID=16431352
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20085598A Expired - Fee Related JP2937194B1 (en) | 1998-07-15 | 1998-07-15 | Substrate heating device |
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| Country | Link |
|---|---|
| JP (1) | JP2937194B1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1316583C (en) * | 2002-11-26 | 2007-05-16 | 株式会社迪斯科 | Box for storing multiple semiconductor sheets |
| KR101930011B1 (en) * | 2013-08-22 | 2018-12-18 | 주식회사 원익아이피에스 | Apparatus for controlling temperature and processing substrate |
-
1998
- 1998-07-15 JP JP20085598A patent/JP2937194B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000034570A (en) | 2000-02-02 |
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