JPH11241935A - Microsensor - Google Patents
MicrosensorInfo
- Publication number
- JPH11241935A JPH11241935A JP10062309A JP6230998A JPH11241935A JP H11241935 A JPH11241935 A JP H11241935A JP 10062309 A JP10062309 A JP 10062309A JP 6230998 A JP6230998 A JP 6230998A JP H11241935 A JPH11241935 A JP H11241935A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- heater
- film layer
- electrically insulating
- insulating thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Measuring Volume Flow (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Resistance Heating (AREA)
- Feedback Control In General (AREA)
- Control Of Temperature (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、シリコン加工技
術、薄膜技術等を応用して作製されるマイクロセンサに
関するもので、特に、ガスセンサ、湿度センサ、温度セ
ンサ、フローセンサ等のマイクロセンサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microsensor manufactured by applying silicon processing technology, thin film technology, and the like, and more particularly to a microsensor such as a gas sensor, a humidity sensor, a temperature sensor, and a flow sensor.
【０００２】[0002]
【従来の技術】従来技術によるマイクロセンサについ
て、図２を参照して説明する。なお、図２は、マイクロ
センサの説明図である。図２（ａ）は平面図、図２
（ｂ）は図２（ａ）のＢ−Ｂ断面図、図２（ｃ）はマイ
クロセンサのヒーターの概略を示す図である。2. Description of the Related Art A conventional microsensor will be described with reference to FIG. FIG. 2 is an explanatory diagram of the microsensor. FIG. 2A is a plan view and FIG.
2B is a cross-sectional view taken along line BB of FIG. 2A, and FIG. 2C is a diagram schematically illustrating a heater of the microsensor.
【０００３】従来技術によるマイクロセンサの作製手順
は、以下の通りである。The procedure for manufacturing a microsensor according to the prior art is as follows.
【０００４】図２に示すように、シリコン基板１上
に、例えば、スパッタ法、ＣＶＤ法等でＳｉＯ2膜等か
らなる第一の電気絶縁薄膜層２を約１.５μｍ厚に形成
する。As shown in FIG. 2, a first electrically insulating thin film layer 2 made of a SiO 2 film or the like is formed to a thickness of about 1.5 μm on a silicon substrate 1 by, for example, a sputtering method or a CVD method.
【０００５】第一の電気絶縁薄膜層２上にスパッタ法
等で白金等からなるヒーター部３及び第一の電極部４か
らなるヒーター４０を形成する。A heater section 3 made of platinum or the like and a heater 40 formed of a first electrode section 4 are formed on the first electrically insulating thin film layer 2 by a sputtering method or the like.
【０００６】ヒーター部３上にスパッタ法、ＣＶＤ法
等でＳｉＯ2膜等の第二の電気絶縁薄膜層５を約１.５μ
ｍ厚に形成する。A second electrically insulating thin film layer 5 such as a SiO 2 film is formed on the heater section 3 by sputtering, CVD or the like to a thickness of about 1.5 μm.
m thickness.
【０００７】第二の電気絶縁薄膜層５上に、感応物質
の電気特性（インピーダンス、キャパシタンス、インダ
クタンス）を測定するための導電性材料からなる第二の
電極部７をスパッタ法等で形成した後、ガス感応物質、
温度感応物質、磁気感応物質等の感応物質から成る感応
部６をスパッタ法、ＣＶＤ法等で形成する。After forming a second electrode portion 7 made of a conductive material for measuring the electrical characteristics (impedance, capacitance, inductance) of the sensitive substance on the second electrically insulating thin film layer 5 by sputtering or the like. , Gas sensitive substances,
A sensitive portion 6 made of a sensitive material such as a temperature sensitive material or a magnetic sensitive material is formed by a sputtering method, a CVD method, or the like.
【０００８】ヒーター部３の下部のシリコン基板１を
水酸化カリウム（ＫＯＨ）等のエッチング液でエッチン
グにより取り除き、空洞部８を形成する。[0008] The silicon substrate 1 below the heater section 3 is removed by etching with an etching solution such as potassium hydroxide (KOH) to form a cavity 8.
【０００９】これにより、ヒーター部３周辺の熱伝導に
関わる物質は、空気以外では第一の電気絶縁薄膜層２と
第二の電気絶縁薄膜層５と感応部６だけになり、感応部
６を効率よく加熱できる。なお、このヒーター部３とヒ
ーター部３周辺の構造体は、架橋構造、片持ち梁構造、
ダイヤフラム構造等の形状にもできる。As a result, the substances related to the heat conduction around the heater section 3 are only the first electrically insulating thin film layer 2, the second electrically insulating thin film layer 5, and the sensitive section 6 except for air, and the sensitive section 6 It can be heated efficiently. The heater section 3 and the structure around the heater section 3 have a bridge structure, a cantilever structure,
It can also be made into a shape such as a diaphragm structure.
【００１０】また、本作製手順によれば、ヒーター部３
及びヒーター部３周辺は、非常に小さく加工でき、熱容
量が小さくできるため、周囲温度の変化に伴う感応部６
の温度追従性が高いという特長がある。According to the present manufacturing procedure, the heater unit 3
In addition, since the area around the heater section 3 can be processed very small and the heat capacity can be reduced, the sensitive section 6 associated with a change in the ambient temperature can be processed.
Is characterized by high temperature followability.
【００１１】[0011]
【発明が解決しようとする課題】しかしながら、使用時
において、ヒーター部３の発熱・放熱状態が不均一で、
ヒーター部３及び感応部６の温度制御の精度が低いとい
う欠点があった。However, during use, the heat generation / radiation state of the heater section 3 is not uniform.
There is a disadvantage that the accuracy of temperature control of the heater section 3 and the sensitive section 6 is low.
【００１２】従って、本発明は、かかる欠点を解決し、
ヒーター部３の発熱・放熱状態を均一にし、ヒーター部
３及び感応部６の温度制御の精度を高めたマイクロセン
サを提供することを目的とする。Accordingly, the present invention solves such a drawback,
An object of the present invention is to provide a microsensor in which the heat generation and heat radiation state of the heater unit 3 are made uniform and the accuracy of temperature control of the heater unit 3 and the sensitive unit 6 is improved.
【００１３】[0013]
【課題を解決するための手段】本発明によれば、ヒータ
ー部に対応する位置に熱伝導率の大きな金属膜を形成し
たものであり、これによりヒーター部の発熱・放熱状態
が均一となり、ヒーター部と感応部の温度制御の精度を
高めることのできるマイクロセンサが得られる。According to the present invention, a metal film having a high thermal conductivity is formed at a position corresponding to a heater portion, whereby the heat generation and heat radiation state of the heater portion become uniform, and A microsensor capable of improving the accuracy of temperature control of the unit and the sensitive unit is obtained.
【００１４】即ち、本発明は、シリコン基板１上に、第
一の電気絶縁薄膜層２が形成されており、該第一の電気
絶縁薄膜層２上にヒーター部３が形成され、該ヒーター
部３の下部に位置する前記シリコン基板１に空洞部８を
形成されてなるマイクロセンサにおいて、前記第一の電
気絶縁薄膜層２とヒーター部３の間に第三の電気絶縁薄
膜層９が形成され、該第三の電気絶縁薄膜層９内に、ヒ
ーター部３と絶縁を確保して金属薄膜からなる均熱薄膜
層１０が形成されているマイクロセンサである。That is, according to the present invention, a first electrically insulating thin film layer 2 is formed on a silicon substrate 1, a heater section 3 is formed on the first electrically insulating thin film layer 2, In the microsensor having a cavity 8 formed in the silicon substrate 1 located below the third substrate 3, a third electrically insulating thin film layer 9 is formed between the first electrically insulating thin film layer 2 and the heater unit 3. This is a microsensor in which a heat equalizing thin film layer 10 made of a metal thin film is formed in the third electrically insulating thin film layer 9 while ensuring insulation from the heater portion 3.
【００１５】[0015]
【発明の実施の形態】以下、本発明の実施の形態につい
て、図面を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１６】図１に、本発明の実施の形態のマイクロセ
ンサの説明図を示す。図１において、図１（ａ）は平面
図、図１（ｂ）は図（ａ）のＡ−Ａ断面図、図１（ｃ）
はマイクロセンサのヒーター概略図である。FIG. 1 is an explanatory diagram of a microsensor according to an embodiment of the present invention. 1A is a plan view, FIG. 1B is a cross-sectional view taken along line AA of FIG. 1A, and FIG.
Is a schematic diagram of a heater of a microsensor.
【００１７】図１により、本発明によるマイクロセンサ
の構造と作製手順を説明する。Referring to FIG. 1, the structure and manufacturing procedure of the microsensor according to the present invention will be described.
【００１８】シリコン基板１上に、例えば、スパッタ
法、ＣＶＤ法等でＳｉＯ2膜等の単層あるいは複数層か
らなる第一の電気絶縁薄膜層２を約１.５μｍ厚に形成
する。A first electrically insulating thin film layer 2 of a single layer or a plurality of layers such as a SiO 2 film is formed on the silicon substrate 1 to a thickness of about 1.5 μm by, for example, a sputtering method or a CVD method.
【００１９】第一の電気絶縁薄膜層２上の一部分にス
パッタ法等でＡｕ等の熱伝導率の大きな金属からなる均
熱薄膜層１０を約１μｍ厚に形成する。On a portion of the first electrically insulating thin film layer 2, a heat equalizing thin film layer 10 made of a metal having high thermal conductivity such as Au is formed to a thickness of about 1 μm by a sputtering method or the like.
【００２０】第一の電気絶縁薄膜層２及び均熱薄膜層
１０上にスパッタ法、ＣＶＤ法等でＳｉＯ2膜等からな
る第三の電気絶縁薄膜層９を約０.５μｍ厚に形成す
る。A third electrically insulating thin film layer 9 made of a SiO 2 film or the like is formed on the first electrically insulating thin film layer 2 and the soaking thin film layer 10 by sputtering, CVD or the like to a thickness of about 0.5 μm.
【００２１】第三の電気絶縁薄膜層９上に、スパッタ
法、ＣＶＤ法等で前記均熱薄膜層１０に対応する位置に
白金等からなるヒーター部３を形成し、このヒーター部
３と電気的に接合させて均熱薄膜層１０に対応しない位
置にＡｕ等により第一の電極部４を形成して、ヒーター
４０とする。On the third electrically insulating thin film layer 9, a heater portion 3 made of platinum or the like is formed at a position corresponding to the heat equalizing thin film layer 10 by a sputtering method, a CVD method, or the like. Then, the first electrode portion 4 is formed of Au or the like at a position not corresponding to the heat equalizing thin film layer 10 to form a heater 40.
【００２２】ヒーター部３上に、スパッタ法、ＣＶＤ
法等でＳｉＯ2膜等の第二の電気絶縁薄膜層５を約１.５
μｍ厚に形成する。Sputtering method, CVD,
A second electrically insulating thin film layer 5 such as a SiO 2 film is
It is formed to a thickness of μm.
【００２３】第二の電気絶縁薄膜層５上に、感応物質
の電気特性（インピーダンス、キャパシタンス、インダ
クタンス）を測定するための導電性材料からなる第二の
電極部７をスパッタ法等で形成した後、ガス感応物質、
温度感応物質、磁気感応物質等の感応物質から成る感応
部６をスパッタ法、ＣＶＤ法等で形成する。After forming a second electrode portion 7 made of a conductive material for measuring the electrical characteristics (impedance, capacitance, inductance) of the sensitive substance on the second electrically insulating thin film layer 5 by sputtering or the like. , Gas sensitive substances,
A sensitive portion 6 made of a sensitive material such as a temperature sensitive material or a magnetic sensitive material is formed by a sputtering method, a CVD method, or the like.
【００２４】ヒーター部３の下部のシリコン基板１を
水酸化カリウム（ＫＯＨ）等のエッチング液でエッチン
グにより取り除き、空洞部８を形成する。The silicon substrate 1 below the heater 3 is removed by etching with an etching solution such as potassium hydroxide (KOH) to form a cavity 8.
【００２５】このように、ヒーター部３に近接して均熱
薄膜層１０を有するマイクロセンサは、ヒーター部３周
辺の熱伝導に関わる物質は、空気以外では、第一の電気
絶縁薄膜層２と第二の電気絶縁薄膜層５と第三の電気絶
縁薄膜層９及び感応部６だけになり、感応部６を効率よ
く加熱できる。また、均熱薄膜層１０が、ヒーター部３
と感応部６の温度分布を均一にして、ヒーター部３及び
感応部６の温度制御の精度を高める。As described above, in the microsensor having the heat equalizing thin film layer 10 in the vicinity of the heater portion 3, the material related to heat conduction around the heater portion 3 is different from the first electrically insulating thin film layer 2 except for air. Only the second electrically insulating thin film layer 5, the third electrically insulating thin film layer 9, and the sensitive part 6 are provided, and the sensitive part 6 can be efficiently heated. In addition, the heat equalizing thin film layer 10 is
And the temperature distribution of the sensitive section 6 is made uniform, and the accuracy of temperature control of the heater section 3 and the sensitive section 6 is improved.
【００２６】[0026]
【発明の効果】以上、説明したごとく、本発明によれ
ば、ヒーターの発熱状態が均一で、ヒーターの温度制御
の精度が高いマイクロセンサが得られる。As described above, according to the present invention, it is possible to obtain a microsensor in which the heat generation state of the heater is uniform and the accuracy of the temperature control of the heater is high.
【図１】本発明の実施の形態のマイクロヒーターを用い
たマイクロセンサの説明図。図１（ａ）は平面図。図１
（ｂ）は図１（ａ）のＡ−Ａ断面図。図１（ｃ）はマイ
クロセンサのヒーターの概略図。FIG. 1 is an explanatory diagram of a microsensor using a microheater according to an embodiment of the present invention. FIG. 1A is a plan view. FIG.
FIG. 2B is a sectional view taken along line AA of FIG. FIG. 1C is a schematic view of a heater of the microsensor.
【図２】従来のマイクロヒーターを用いたマイクロセン
サの説明図。図２（ａ）は平面図。図２（ｂ）は図２
（ａ）のＢ−Ｂ断面図。図２（ｃ）はマイクロセンサの
ヒーターの概略図。FIG. 2 is an explanatory diagram of a micro sensor using a conventional micro heater. FIG. 2A is a plan view. FIG. 2B shows FIG.
The BB sectional view of (a). FIG. 2C is a schematic diagram of a heater of the microsensor.
１ シリコン基板 ２ 第一の電気絶縁薄膜層 ３ ヒーター部 ４ 第一の電極部 ５ 第二の電気絶縁薄膜層 ６ 感応部 ７ 第二の電極部 ８ 空洞部 ９ 第三の電気絶縁薄膜層 １０ 均熱薄膜層 ４０ ヒーター DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 First electrically insulating thin film layer 3 Heater part 4 First electrode part 5 Second electrically insulating thin film layer 6 Sensitive part 7 Second electrode part 8 Cavity part 9 Third electrically insulating thin film layer 10 Average Thermal thin film layer 40 heater
Claims (1)
縁薄膜層（２）が形成されており、該第一の電気絶縁薄
膜層（２）上にヒーター部（３）が形成され、該ヒータ
ー部（３）の下部に位置する前記シリコン基板（１）に
空洞部（８）を形成されてなるマイクロセンサにおい
て、前記第一の電気絶縁薄膜層（２）とヒーター部
（３）の間に第三の電気絶縁薄膜層（９）が形成され、
該第三の電気絶縁薄膜層（９）内に、ヒーター部（３）
と金属薄膜からなる均熱薄膜層（１０）が形成されてい
ることを特徴とするマイクロセンサ。1. A first electrically insulating thin film layer (2) is formed on a silicon substrate (1), and a heater section (3) is formed on the first electrically insulating thin film layer (2). A microsensor comprising a hollow portion (8) formed in the silicon substrate (1) located below the heater portion (3), wherein the first electrically insulating thin film layer (2) and the heater portion (3) are formed. A third electrically insulating thin film layer (9) is formed during
In the third electrically insulating thin film layer (9), a heater section (3)
And a heat equalizing thin film layer (10) made of a metal thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10062309A JPH11241935A (en) | 1998-02-25 | 1998-02-25 | Microsensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10062309A JPH11241935A (en) | 1998-02-25 | 1998-02-25 | Microsensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11241935A true JPH11241935A (en) | 1999-09-07 |
Family
ID=13196416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10062309A Withdrawn JPH11241935A (en) | 1998-02-25 | 1998-02-25 | Microsensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11241935A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014190847A (en) * | 2013-03-27 | 2014-10-06 | Ngk Spark Plug Co Ltd | Gas sensor |
| JP2016061593A (en) * | 2014-09-16 | 2016-04-25 | ヤマハファインテック株式会社 | Catalytic combustion type gas sensor |
-
1998
- 1998-02-25 JP JP10062309A patent/JPH11241935A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014190847A (en) * | 2013-03-27 | 2014-10-06 | Ngk Spark Plug Co Ltd | Gas sensor |
| JP2016061593A (en) * | 2014-09-16 | 2016-04-25 | ヤマハファインテック株式会社 | Catalytic combustion type gas sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100942439B1 (en) | Fabricating method for micro gas sensor and the same | |
| US5296819A (en) | Polymer capacitative moisture sensitive device comprising heating means | |
| US9440847B2 (en) | Single silicon wafer micromachined thermal conduction sensor | |
| CN107381495B (en) | MEMS micro-hotplate and manufacturing method thereof | |
| JPH01109250A (en) | Gas sensor | |
| US4915778A (en) | Method of fabricating an apparatus for measuring velocity of flow | |
| JPH11241935A (en) | Microsensor | |
| JPH10160698A (en) | Micro sensor | |
| JP3047137B2 (en) | Manufacturing method of humidity sensor | |
| CN214114913U (en) | Novel suspended membrane type MEMS micro-heating plate | |
| KR101992022B1 (en) | Semiconductor gas sensor | |
| JPS622438B2 (en) | ||
| JP4033575B2 (en) | Sensor and humidity gas detection method | |
| JPH11354302A (en) | Thin-film resistor element | |
| KR100559129B1 (en) | Thermal air flow sensor | |
| KR200156459Y1 (en) | Ntc thermistor | |
| JPH10221144A (en) | Micro heater and its manufacture | |
| KR100396656B1 (en) | Micro Absolute Humidity Sensor fabricating method | |
| JPH11233240A (en) | Electric heater | |
| JPH10132957A (en) | Micro-sensor | |
| KR20050076101A (en) | One chip gas sensor for detecting multi gases fabricated over micro cavity and fabricating method of the same | |
| JPS58102144A (en) | Gas sensor | |
| JP2679811B2 (en) | Gas detector | |
| JPH10221143A (en) | Micro heater | |
| CN117890437A (en) | MEMS gas sensor and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040618 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20060425 |