CN214114913U - Novel suspended membrane type MEMS micro-heating plate - Google Patents
Novel suspended membrane type MEMS micro-heating plate Download PDFInfo
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- CN214114913U CN214114913U CN202022854958.0U CN202022854958U CN214114913U CN 214114913 U CN214114913 U CN 214114913U CN 202022854958 U CN202022854958 U CN 202022854958U CN 214114913 U CN214114913 U CN 214114913U
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Abstract
The utility model relates to a sensor technical field, concretely relates to novel hang little hot plate of diaphragm type MEMS. The testing device comprises a monocrystalline silicon substrate, a lower insulating layer, a heating layer and an electrode end thereof, an upper insulating layer, a testing layer and an electrode end thereof and a covering layer. The utility model discloses an increase the overburden, the overburden removes heating layer electrode end, test layer electrode end and middle test layer region and exposes, and other areas are full coverage, can realize good thermal insulation, reduce the heat loss; meanwhile, the heating layer and the testing layer are wrapped by the bare metal wires, so that the problem of no wiring caused by thermal expansion and cold contraction is reduced; but also the structural strength of the lower insulating layer suspension film can be enhanced. The covering layer is exposed in the testing layer area, the groove with the specific pattern is formed in the testing layer area, the sensitive material can be subjected to a dam enclosing effect in the later period when coated, the coating consistency of the sensitive material is improved, meanwhile, the close combination of the sensitive material and the micro-heating plate can be increased, and the problem of falling-off of the sensitive material is effectively reduced.
Description
Technical Field
The utility model relates to a sensor technical field, concretely relates to novel hang little hot plate of diaphragm type MEMS.
Background
The micro-hotplate is a common micro-heating platform, and the basic structure of the micro-hotplate comprises a suspended dielectric film and a thin film resistor line. When an electric current is passed through the thin film resistor strips, a portion of the joule heat generated by the resistors is used to heat the micro-hotplate, and another portion is dissipated in the ambient environment in the form of conduction, convection and thermal radiation.
With the continuous development of MEMS technology and microelectronic technology, micro-hotplates are widely used due to their great advantages of array fabrication process, small volume, low power consumption and easy combination of other materials, such as micro gas sensors, micro accelerometers, micro barometers, and thin film calorimetric card meters. Among them, the micro-hotplate accounts for the largest proportion in the application of micro gas sensors.
In the prior art, the main research focus of the micro-hotplate is to reduce the power consumption as much as possible, on one hand, a vacuum heat insulation layer, a heat insulation groove or a heat insulation layer made of other materials is added at the bottom of a heating layer. Such as those disclosed in utility model 201710126277.2 and utility model 201420399824.6. On the other hand, researchers have also reduced power consumption by reducing the heat loss of the target heat conduction, for example, a diamond layer with very high heat conductivity and insulation is added between the heating electrode and the gear shaping electrode layer as disclosed in utility model 201920113696.7, which finally achieves the effect of reducing power consumption.
At present, the micro-heating plate in the field of micro-gas sensors only pursues low power consumption, and cannot meet all use requirements. In the application of the micro gas sensor, the micro hot plate not only has lower power consumption, but also is combined with different sensitive materials to jointly realize the stable and reliable gas sensor function. The existing MEMS micro-hotplate directly coats a sensitive material on a test layer, and the sensitive material is a powdery material and is directly coated on the test layer, so that the MEMS micro-hotplate has high process requirement, is not ideal in effect, is practical for a long time and is easy to fall off, and a test error is caused.
SUMMERY OF THE UTILITY MODEL
The utility model provides a technical problem provide a preparation has the overburden of specific shape, and the overburden is located test layer region and electrode terminal region and exposes, and other regional full coverages's novel membrane MEMS micro-hot plate hangs.
The utility model provides a technical scheme that its technical problem adopted is:
a novel suspended membrane type MEMS micro-hotplate is characterized in that: comprises a monocrystalline silicon substrate;
the lower insulating layer is covered on the monocrystalline silicon substrate through a PECVD technology;
the heating layer and the electrode end thereof are defined in shape and position by a photoresist-homogenizing photoetching technology and are deposited on the lower insulating layer by a magnetron sputtering technology, and the heating layer is positioned in the middle of the micro-heating plate;
the upper insulating layer is covered on the heating layer through a PECVD technology;
the shape and the position of the test layer and the electrode end thereof are defined by a photoresist-homogenizing photoetching technology, the test layer is deposited on the upper insulating layer by a magnetron sputtering technology, and the test layer is positioned in the middle of the micro-hotplate;
the covering layer is deposited on the testing layer through a PECVD technology, the covering layer exposes the electrode end of the heating layer, the electrode end of the testing layer and the middle testing layer region and completely covers other regions, and the covering layer is positioned in the upper end region of the testing layer to form a sensitive material coating groove;
and etching a cavity at a designated position at the lower end of the monocrystalline silicon substrate.
Further, the thickness of the lower insulating layer and the upper insulating layer is 100nm to 800 nm.
Further, the thickness of the heating layer and the test layer is 50nm to 500 nm.
Further, the thickness of the covering layer is 100nm-1200 nm.
Further, the lower insulating layer, the upper insulating layer and the covering layer are silicon oxide layers or silicon nitride layers.
Further, the area of the sensitive material coating groove is smaller than that of the heating layer heating area.
The utility model has the advantages that:
1. by adding the covering layer, the covering layer is exposed except the heating layer electrode end, the testing layer electrode end and the middle testing layer region, and other regions are completely covered, so that a good heat insulation effect can be realized, and the heat loss is reduced; meanwhile, the heating layer and the testing layer are wrapped by the bare metal wires, so that the problem of no wiring caused by thermal expansion and cold contraction is reduced; but also the structural strength of the lower insulating layer suspension film can be enhanced.
2. The covering layer is located the test layer region and exposes, because the covering layer has certain thickness, forms the recess of specific figure in the test layer region, later stage when coating sensitive material, can play the box dam effect to sensitive material, improves sensitive material coating's uniformity, can increase the inseparable combination of sensitive material and little hot plate simultaneously, effective less sensitive material's the problem of droing.
3. Because the area of the sensitive material coating groove is smaller than that of the heating layer heating area, the temperature difference between the central area and the edge area of the sensitive material can be reduced by the design, and more ideal gas sensor performance is realized.
Drawings
Fig. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic view of the preparation method of the present invention;
FIG. 3 is a schematic view of the present invention;
labeled as:
1. the device comprises a monocrystalline silicon substrate, 2, a ceramic suspension beam layer, 3, a heating layer, 4, an insulating layer, 5, a test layer, 6, a covering layer, 7, a sensitive material, 101, a cavity, 201, a suspension film, 301, a heating layer electrode end, 401 and a test layer electrode end.
Detailed Description
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, as those skilled in the art will be able to make similar modifications without departing from the spirit and scope of the present invention.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
A novel suspended membrane MEMS micro-hotplate, as shown in figure 1, comprising: the testing device comprises a monocrystalline silicon substrate 1, a lower insulating layer 2, a heating layer 3 and an electrode end 301 thereof, an upper insulating layer 4, a testing layer 5 and an electrode end 501 thereof and a covering layer 6. The lower insulating layer 2 covers the upper surface of the monocrystalline silicon substrate 1 through a PECVD technology; the heating layer 3 and the electrode end 301 thereof are firstly defined with the shape and the position of the heating wire and the motor end thereof by the photoresist-homogenizing photoetching technology, and a layer of metal platinum is deposited on the lower insulating layer 2 by the magnetron sputtering technology to be used as the heating layer 3 and the electrode end 301 thereof; the upper insulating layer 4 is covered on the heating layer 3 by the PECVD technology; the test layer 5 is a fork tooth electrode test layer, the shapes and the positions of the fork tooth electrode and the electrode end thereof are defined by the uniform photoresist lithography technology, and a layer of metal platinum is deposited on the upper insulating layer 4 by the magnetron sputtering technology to be used as the test layer 5 and the electrode end 501 thereof; the covering layer 6 is deposited on the testing layer 5 through a PECVD technology, the covering layer 6 exposes the heating layer electrode end 301, the testing layer electrode end 501 and the middle testing layer 5, and completely covers other areas, and the covering layer 6 is positioned in the upper end area of the testing layer 5 to form a sensitive material coating groove; when the cavity 101 is etched at a designated position on the lower surface of the crystalline silicon substrate 1, the part of the lower insulating layer 2 above the cavity constitutes the suspended film 201.
Wherein, the thickness of the lower insulating layer 2 and the upper insulating layer 4 is 100nm-800nm, the thickness of the heating layer 3 and the testing layer 5 is 50-500nm, and the thickness of the covering layer 6 is 100nm-1200 nm. The lower insulating layer 2, the upper insulating layer 4, and the capping layer 6 are silicon oxide layers or silicon nitride layers.
By adding the covering layer 6, the areas of the covering layer 6 except the heating layer electrode end 301, the testing layer electrode end 501 and the middle testing layer 5 are exposed, and other areas are completely covered, so that a good heat insulation effect can be realized, and the heat loss is reduced; meanwhile, the naked metal wires of the heating layer 3 and the testing layer 5 are wrapped inside, so that the problem of no wiring caused by thermal expansion and cold contraction is reduced; but also the structural strength of the lower insulating layer suspension film can be enhanced. The covering layer 6 is located in the area of the test layer 5 and is exposed, because the covering layer has a certain thickness, a groove with a specific pattern is formed on the area of the test layer, and when the sensitive material 7 is coated in the later period, the covering layer can play a role of a dam for the sensitive material, so that the coating consistency of the sensitive material 7 is improved, meanwhile, the close combination of the sensitive material 7 and the micro-heating plate can be increased, and the problem of falling-off of the sensitive material is effectively reduced.
The utility model discloses in, the area of the sensitive material coating recess that overburden 6 formed is less than the zone of heating area that the 3 heater strips of zone of heating formed, because the area of sensitive material coating recess is less than the area of the zone of heating, the difference in temperature of sensitive material central zone and marginal area can be dwindled in this kind of design, realizes more ideal gas sensor performance.
The preparation method of the utility model is as follows:
s1: cleaning the monocrystalline silicon substrate, and cleaning the monocrystalline silicon substrate by using solutions such as an acid solution, an organic solvent and deionized water;
s2: preparing a lower insulating layer, and depositing a silicon oxide layer or a silicon nitride layer with the thickness of 100-800nm as the lower insulating layer by adopting a PECVD (plasma enhanced chemical vapor deposition) technology;
s3: preparing a heating layer and an electrode end thereof, defining the shape and the position of a heating wire layer and the electrode end thereof on a lower insulating layer by a photoresist-homogenizing photoetching technology, depositing a layer of 50-500nm metal platinum or gold as the heating layer and the electrode end thereof by a magnetron sputtering technology, and finally removing photoresist by a stripping process;
s4: preparing an upper insulating layer, and depositing a 100nm-800nm silicon oxide layer or a silicon nitride layer on the heating layer as the upper insulating layer by adopting the technology and the process of the step S2;
s5: preparing a test layer and an electrode end thereof, adopting the technology and the flow of the step S3, defining the shape and the position of the prong electrode and the electrode end thereof on the upper insulating layer by the photoresist-homogenizing photoetching technology, depositing a layer of 50-500nm metal platinum or gold on the upper insulating layer by the magnetron sputtering technology to be used as the test layer and the electrode end thereof, and finally removing the photoresist by the stripping technology.
S6: preparing a covering layer, depositing a 100-1200 nm silicon oxide layer or a silicon nitride layer on the test layer by adopting a PECVD (plasma enhanced chemical vapor deposition) technology to serve as the covering layer, wherein the covering layer exposes the electrode end of the heating layer, the electrode end of the test layer and the middle test layer and completely covers other regions, the covering layer is positioned at the upper end region of the test layer to form a sensitive material coating groove, and the sensitive material coating groove plays a role of a dam when a later sensitive material is coated, so that the coating consistency of the sensitive material is enhanced, and the close fit between the sensitive material and the micro-heating plate is improved;
s7: and etching the cavity on the lower surface of the monocrystalline silicon substrate by using concentrated sulfuric acid by using wet etching.
The above-mentioned embodiments, further detailed description of the objects, technical solutions and advantages of the present invention, it should be understood that the above-mentioned embodiments are only specific embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (6)
1. A novel suspended membrane type MEMS micro-hotplate is characterized in that: comprises a monocrystalline silicon substrate (1);
a lower insulating layer (2) covering the monocrystalline silicon substrate (1) by means of PECVD technology;
the heating layer (3) and the electrode end (301) thereof are defined in shape and position by a photoresist-homogenizing photoetching technology and are deposited on the lower insulating layer (2) by a magnetron sputtering technology, and the heating layer (3) is positioned in the middle of the micro-hotplate;
an upper insulating layer (4) covering the heating layer (3) by PECVD technology;
the testing layer (5) and the electrode end (501) thereof are defined in shape and position through a photoresist-homogenizing photoetching technology and are deposited on the upper insulating layer (4) through a magnetron sputtering technology, and the testing layer (5) is positioned in the middle of the micro-hotplate;
the covering layer (6) is deposited on the test layer (5) through a PECVD (plasma enhanced chemical vapor deposition) technology, the covering layer (6) enables the heating layer electrode end (301), the test layer electrode end (501) and the middle test layer (5) to be exposed, other areas are completely covered, and the covering layer (6) is located in the upper end area of the test layer (5) to form a sensitive material coating groove;
and a cavity is etched at a designated position of the lower end of the monocrystalline silicon substrate (1).
2. A novel suspended-film MEMS microhotplate according to claim 1, wherein: the thickness of the lower insulating layer (2) and the upper insulating layer (4) is 100nm-800 nm.
3. A novel suspended-film MEMS microhotplate according to claim 1, wherein: the thickness of the heating layer (3) and the testing layer (5) is 50nm-500 nm.
4. A novel suspended-film MEMS microhotplate according to claim 1, wherein: the thickness of the covering layer (6) is 100nm-1200 nm.
5. A novel suspended-film MEMS microhotplate according to claim 1, wherein: the lower insulating layer (2), the upper insulating layer (4) and the covering layer (6) are silicon oxide layers or silicon nitride layers.
6. A novel suspended-film MEMS micro-hotplate according to claims 1-5, characterized in that: the area of the sensitive material coating groove is smaller than that of the heating area of the heating layer (3).
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114804005A (en) * | 2022-04-25 | 2022-07-29 | 山东工商学院 | MEMS micro-hotplate based on transverse composite dielectric film and manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114804005A (en) * | 2022-04-25 | 2022-07-29 | 山东工商学院 | MEMS micro-hotplate based on transverse composite dielectric film and manufacturing method |
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