JPH11233244A - Heat plate for cvd device - Google Patents
Heat plate for cvd deviceInfo
- Publication number
- JPH11233244A JPH11233244A JP4891698A JP4891698A JPH11233244A JP H11233244 A JPH11233244 A JP H11233244A JP 4891698 A JP4891698 A JP 4891698A JP 4891698 A JP4891698 A JP 4891698A JP H11233244 A JPH11233244 A JP H11233244A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- plate
- heater
- hot plate
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Surface Heating Bodies (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】 腐食性ガスを使用してチャンバ
ー内をプラズマクリーニングするＣＶＤ装置のチャンバ
ー内に設置し利用される熱板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hot plate installed and used in a chamber of a CVD apparatus for performing plasma cleaning of the inside of a chamber using a corrosive gas.
【０００２】[0002]
【従来の技術】 半導体製造工程の中で、基板表面に酸
化シリコンの薄膜を形成するプラズマＣＶＤ成膜工程が
ある。該プラズマＣＶＤ装置は、排気管９２と吸気管９
１を有する反応チャンバー内９３に、基板９４を載置す
る、ヒーター９６を組み込んだ熱板９５と、熱板９５に
対して対向配置され高周波電力を供給する高周波電極９
７より概略構成されており、所定の温度に加熱された反
応チャンバー内９３の熱板９５上に基板９４を載置し、
反応ガスを供給し、前記電極９７に高周波電圧を印加し
てプラズマを発生させ、ガス分子を分離し、基板表面に
酸化シリコン薄膜を形成させるものである。2. Description of the Related Art In a semiconductor manufacturing process, there is a plasma CVD film forming process for forming a silicon oxide thin film on a substrate surface. The plasma CVD apparatus includes an exhaust pipe 92 and an intake pipe 9.
In a reaction chamber 93 having a substrate 1, a substrate 94 is placed, and a heating plate 95 having a heater 96 incorporated therein, and a high-frequency electrode 9 disposed opposite to the heating plate 95 and supplying high-frequency power
7, a substrate 94 is placed on a hot plate 95 in a reaction chamber 93 heated to a predetermined temperature.
A reactive gas is supplied, a high frequency voltage is applied to the electrodes 97 to generate plasma, gas molecules are separated, and a silicon oxide thin film is formed on the substrate surface.
【０００３】しかし、上記のプラズマＣＶＤ成膜処理に
より成膜された酸化シリコン膜は、基板表面以外の熱板
９５やチャンバー内９３にも蒸着し付着、堆積する。こ
の堆積物は剥離または再蒸着などにより、異物となって
基板を汚染し、その品質を劣化させる等の問題があるた
め、定期的にチャンバー内部をクリーニングし、この汚
染を排除する必要がある。However, the silicon oxide film formed by the above-mentioned plasma CVD film forming process is also deposited and deposited on a hot plate 95 and a chamber 93 other than the substrate surface. This deposit becomes a foreign substance due to peeling or re-evaporation, and contaminates the substrate, thereby deteriorating the quality. Therefore, it is necessary to periodically clean the inside of the chamber to eliminate this contamination.
【０００４】そこで近年チャンバー内のクリーニング方
法としてプラズマによるガスクリーニングが行われてい
る。これはチャンバー内を低真空状態とし、微量の腐食
性ガス（ＮＦ3 、ＣＦ4 等）を該チャンバー内に供給
し、電極に高周波を印加してガスをプラズマ化させ、こ
れにより生じるフッ素ラジカルにより、各部に付着して
いる堆積物をフッ化、剥離して排気ガスとともにチャン
バー外に排出させるものである。In recent years, gas cleaning by plasma has been performed as a method of cleaning the inside of a chamber. In this method, the inside of the chamber is set in a low vacuum state, a small amount of corrosive gas (NF 3 , CF 4, etc.) is supplied into the chamber, and a high frequency is applied to the electrode to convert the gas into a plasma. The deposits adhering to the respective parts are fluorinated, peeled off, and discharged together with the exhaust gas to the outside of the chamber.
【０００５】上記クリーニング方法においては、腐食性
ガスが使用されるため、チャンバー内部には耐食性が求
められる。そこで本用途のチャンバー内部の材質には一
般的に比較的耐食性の高いアルミニウムや表面にアルマ
イト処理を施したアルミ系材料が用いられる。In the above-mentioned cleaning method, since a corrosive gas is used, corrosion resistance is required inside the chamber. Therefore, as the material for the inside of the chamber for this application, aluminum having relatively high corrosion resistance or aluminum-based material whose surface is subjected to alumite treatment is generally used.
【０００６】当然チャンバー内部に設置される熱板にも
耐食性が求められるため、従来より熱板として、アルミ
ニウムや表面にアルマイト処理を施したアルミ系材料に
ヒーターを鋳込んだ、鋳込みヒーター等が使用されてい
た。[0006] Naturally, corrosion resistance is also required for the hot plate installed inside the chamber. Therefore, as a hot plate, a cast heater in which a heater is cast into aluminum or an aluminum material whose surface is anodized is conventionally used. It had been.
【０００７】[0007]
【発明が解決しようとする課題】 しかし従来の鋳込み
ヒーター等による熱板では、その製造工程での巣の発生
は避けられず、この巣が熱板表面の突起物、高温となっ
たときの内部ガスの放出といった問題を引き起こしてい
た。また、従来のアルミニウムの熱板では、高温での機
械的強度の弱さから、大きな歪みが生じるといった現象
があり、ワークへの均一な成膜のための平面度が十分に
得られないといった問題があった。更に熱板の材質のア
ルミ系材料と内部のヒーター材料（通常ニッケル−クロ
ム系合金）との高温にしたときの膨張率の違いによる、
更に大きな変形やヒーターの断線といった可能性も否定
できなかった。However, in the case of a hot plate using a conventional cast heater or the like, the occurrence of nests in the manufacturing process is inevitable. This caused problems such as gas release. In addition, the conventional aluminum hot plate has a phenomenon that a large distortion is generated due to a weak mechanical strength at a high temperature, and a sufficient flatness for uniform film formation on a work cannot be obtained. was there. Furthermore, due to the difference in the expansion coefficient between the aluminum-based material of the hot plate and the internal heater material (usually nickel-chromium-based alloy) when the temperature is increased.
The possibility of further deformation or disconnection of the heater could not be denied.
【０００８】また近年液晶ディスプレイに使用される薄
膜トランジスタ（ＴＦＴ）用プラズマＣＶＤ装置等に代
表されるように電子部品分野では成膜装置の大型化が進
んでおり、熱板に対しても大型化の要望が強まっている
が、従来の鋳込みヒーターでは前記した歪みの問題が熱
板の表面積を大きくするほど顕著となるため、大型化が
難しいといった問題もあった。In recent years, in the field of electronic components such as a plasma CVD apparatus for a thin film transistor (TFT) used for a liquid crystal display, a film forming apparatus is increasing in size, and a hot plate is also increasing in size. Although demands have been increasing, there has been a problem that it is difficult to increase the size of the conventional cast heater because the problem of distortion becomes more pronounced as the surface area of the hot plate is increased.
【０００９】更に腐食性ガスに対して比較的耐食性が高
いアルミニウムや表面にアルマイト処理を施したアルミ
系材料を使用しているといえども徐々に腐食が進むた
め、一定枚数を処理するごとに熱板を新品に交換する必
要があった。Further, even though aluminum having relatively high corrosion resistance to corrosive gas or an aluminum-based material whose surface is subjected to alumite treatment is used, the corrosion gradually progresses. The plate had to be replaced with a new one.
【００１０】以上の問題点に鑑み、本発明は、アルミニ
ウムを使用しながら巣による問題がなく、高温環境下で
も変形が小さく表面平面度の高いＣＶＤ装置用熱板を提
供することを目的とする。[0010] In view of the above problems, an object of the present invention is to provide a hot plate for a CVD apparatus which uses aluminum, has no problem due to nests, has a small deformation even in a high temperature environment, and has a high surface flatness. .
【００１１】また、本発明の別の目的は、市場の要望に
鑑み、大型のワークに対応可能な表面積が大きく、しか
も均熱なＣＶＤ装置用熱板を提供することである。Another object of the present invention is to provide a hot plate for a CVD apparatus which has a large surface area capable of coping with a large work and has a uniform temperature in view of the demands of the market.
【００１２】更に本発明の別な目的は、熱板を頻繁に交
換することを必要としない長寿命なＣＶＤ装置用熱板を
提供することである。Still another object of the present invention is to provide a long-life hot plate for a CVD apparatus which does not require frequent replacement of the hot plate.
【００１３】[0013]
【課題を解決するための手段】 本発明のＣＶＤ装置用
熱板は、３枚の純アルミニウムのプレートを重ね、その
異なる層間の一方にヒーター、他方に補強材を挟み込ん
で層間を接着して３層構造とする、詳しくは、第１層に
溝を設け該溝内にヒーターを入れ、第１層と第２層を接
着し、一方第３層に溝を設け該溝内に補強材を入れて第
３層と第２層と接着して３層構造とし、該ヒーター及び
補強材は各層のいずれのプレートにも接着させず溝内に
収める。Means for Solving the Problems A hot plate for a CVD apparatus according to the present invention is obtained by stacking three pure aluminum plates, bonding a heater to one of the different layers, and adhering a reinforcing material to the other to sandwich the plates. It has a layer structure. Specifically, a groove is formed in the first layer, a heater is inserted in the groove, and the first and second layers are bonded, while a groove is formed in the third layer, and a reinforcing material is inserted in the groove. The third layer and the second layer are bonded to form a three-layer structure, and the heater and the reinforcing material are accommodated in the grooves without being bonded to any plate of each layer.
【００１４】また、前記構造の熱板を複数枚平面状に組
み合わせて並べ一体とする。Further, a plurality of hot plates having the above-described structure are combined in a plane shape and arranged integrally.
【００１５】更に前記構造の熱板の上部表面の腐食性ガ
スに曝される面に純アルミニウムの保護プレートを載置
して該表面を覆って解決手段とした。Further, a protective plate made of pure aluminum is placed on the upper surface of the hot plate having the above structure, which is exposed to corrosive gas, to cover the surface to provide a solution.
【００１６】[0016]
【作用】 本発明の３層構造の熱板によれば、アルミプ
レートにヒーターを装着するのに鋳込みのような製造方
法をとらないため、元より巣の発生がなく、前記したよ
うな巣に起因する問題は排除され、また、補強材を入れ
たことにより、高温にしても歪み変形が小さく、更にプ
レートとヒーター、補強材が接着されていないため、高
温にしたときの膨張率の違いによる変形、ヒーターの破
損がない。即ち、アルミ材に比較してヒーターのシース
材（通常ニッケル−クロム系合金材）や補強材の鉄材は
熱膨張が小さいため、接着して固定した場合アルミニウ
ム板が変形したり、ヒーターが引っ張られ破損する可能
性があるが、これが排除される。According to the hot plate having a three-layer structure of the present invention, since a manufacturing method such as casting is not used for mounting the heater on the aluminum plate, no nest is generated from the beginning, and the nest as described above is formed. The problem caused by this is eliminated, and the addition of the reinforcing material reduces distortion deformation even at high temperatures, and furthermore, because the plate, heater and reinforcing material are not bonded, the difference in expansion coefficient at high temperatures No deformation, no damage to heater. That is, since the sheath material of the heater (usually a nickel-chromium alloy material) and the iron material of the reinforcing material have a smaller thermal expansion than the aluminum material, the aluminum plate is deformed or the heater is pulled when fixed by bonding. Damage is possible, but this is eliminated.
【００１７】近年の大型で均熱な熱板に対する要望に
は、複数の同一の熱板を平面に並べることで対応可能
で、更に一枚の大型熱板と比較しても歪みが小さく、小
型のものほど温度管理がきめ細かくできるため均熱性も
向上させることができる。In recent years, a demand for a large, uniform heat plate can be met by arranging a plurality of identical heat plates on a plane, and the distortion is small compared to a single large heat plate. Since the temperature control can be performed more finely as the temperature is higher, the temperature uniformity can be improved.
【００１８】熱板表面を保護プレートで覆うことによ
り、腐食が進んだ場合でも熱板には腐食性ガスが直接触
れないため、保護プレートのみの交換で済み、熱板本体
は交換が不要となる。By covering the surface of the hot plate with the protective plate, the corrosive gas does not come into direct contact with the hot plate even if the corrosion has progressed. Therefore, only the protective plate needs to be replaced, and the hot plate body does not need to be replaced. .
【００１９】[0019]
【実施例】 以下本発明の実施例を図面を参考しながら
詳細に説明する。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
【００２０】図１、図２は本発明の実施例の熱板を示し
たもので、純アルミニウムプレート１（４００＊４５
０）の３層構造をなし、第１層のプレート１１と第２層
のプレート１２との層間にヒーター３が、第２層プレー
ト１２と第３層プレート１３の層間に補強材５を挟んで
熱板本体の基本構成をなす。より詳細には、第１層のプ
レート１１に溝２を切り、該溝２内にヒーター３（２ｋ
Ｗ＊８本）を入れる。尚、該ヒーター３の配置は熱板表
面が均熱となるよう計算し設計され、温度センサー（図
示せず）としてシース熱電対を取り付けた。一方第３層
のプレート１３にはプレート１３中心から放射状に溝４
を切り、該溝４内に超強力鋼（１８％Ｎｉマルエージン
グ鋼）よりなる補強材５を入れ、各々、層の溝を切った
面を第２層のプレート１２とろう材により接着して構成
する。尚、ろう材による接着のさい、ヒーター３及び補
強材５がいずれのプレート１とも接着されないようにヒ
ーター３及び補強材５には接着防止剤を予め施す。FIGS. 1 and 2 show a hot plate according to an embodiment of the present invention. A pure aluminum plate 1 (400 * 45) is shown.
0), a heater 3 is interposed between the first layer plate 11 and the second layer plate 12, and the reinforcing material 5 is interposed between the second layer plate 12 and the third layer plate 13. The basic configuration of the hot plate body. More specifically, the groove 2 is cut in the plate 11 of the first layer, and the heater 3 (2k
W * 8). The arrangement of the heater 3 was calculated and designed so that the surface of the hot plate was soaked, and a sheath thermocouple was attached as a temperature sensor (not shown). On the other hand, the third layer plate 13 has grooves 4 radially from the center of the plate 13.
And a reinforcing material 5 made of ultra-high strength steel (18% Ni maraging steel) is put in the groove 4, and the cut surface of each layer is bonded to the plate 12 of the second layer with a brazing material. Constitute. When bonding with the brazing material, an adhesion inhibitor is applied to the heater 3 and the reinforcing material 5 in advance so that the heater 3 and the reinforcing material 5 are not bonded to any of the plates 1.
【００２１】前記手段で構成した熱板を第１層のプレー
ト１１を表面として平面上に縦横２枚、計４枚を並べて
一組の熱板（８００＊９００）とした。The hot plate constituted by the above-mentioned means was arranged as a set of hot plates (800 * 900) by arranging a total of four hot and cold plates on a plane with the plate 11 of the first layer as a surface.
【００２２】更に前記熱板の表面に一枚の熱板表面保護
のための保護プレート６（１１００＊１２００）を熱板
表面を完全に覆うように載置して本発明の熱板を構成し
た。Further, a hot plate of the present invention was constructed by placing a protective plate 6 (1100 * 1200) on the surface of the hot plate so as to completely cover the hot plate surface. .
【００２３】尚、上記熱板はプラズマＣＶＤ装置への使
用に限定したものではなく、同様なクリーニングを必要
とするエッチング装置にも使用できる。The hot plate is not limited to use in a plasma CVD apparatus, but can be used in an etching apparatus requiring similar cleaning.
【００２４】[0024]
【発明の効果】 本発明によれば、巣の発生を排除した
製造方法、補強材の効果更にヒーター及び補強材と熱板
のプレートが接着されていない構成の作用により、高温
でも表面の歪みが小さく平面度が良好なため、高温条件
下でもワークに均一な成膜を形成することが可能な熱板
を提供することができる。According to the present invention, the production method eliminating the occurrence of nests, the effect of the reinforcing material, and the effect of the constitution in which the heater and the reinforcing material are not bonded to the plate of the hot plate cause the surface distortion even at high temperatures. Since it is small and has good flatness, it is possible to provide a hot plate capable of forming a uniform film on a work even under high temperature conditions.
【００２５】歪みの小さい構造の前記熱板を複数枚平面
上に並べて構成するため、全体の歪み変形が小さく均熱
性の良好さを保ちながら、大面積化可能で、ワークの大
型化要望に対応できる。Since a plurality of the hot plates having a structure with a small distortion are arranged side by side on a plane, a large distortion can be achieved while maintaining a good uniformity while minimizing the whole distortion deformation, and it is possible to meet a demand for a large-sized work. it can.
【００２６】熱板の腐食性ガス接触面に保護プレートを
載置することにより、熱板表面自体は腐食が進まず、保
護プレートのみの交換で済むため、熱板が長寿命化し低
コスト化が可能となる。By mounting the protection plate on the corrosive gas contact surface of the hot plate, the surface of the hot plate itself does not corrode, and only the protection plate needs to be replaced. Therefore, the life of the hot plate is prolonged and the cost is reduced. It becomes possible.
【図１】 本発明の熱板の実施例を示す横断面図FIG. 1 is a cross-sectional view showing an embodiment of a hot plate according to the present invention.
【図２】 本発明の熱板の実施例を示す上面図（保護プ
レートは省略）FIG. 2 is a top view showing an embodiment of the hot plate of the present invention (a protective plate is omitted).
【図３】 一般的なＣＶＤ装置の概略図FIG. 3 is a schematic diagram of a general CVD apparatus.
１． アルミニウムプレート １１．第１層のプレート １２．第２層のプレート １３．第３層のプレート ２． 溝（ヒーター用） ３． ヒーター ４． 溝（補強材用） ５． 補強材 ６． 保護プレート ９１．吸気管 ９２．排気管 ９３．チャンバー内 ９４．基板（ワーク） ９５．熱板 ９６．ヒーター ９７．高周波電極 1. Aluminum plate 11. First layer plate 12. Second layer plate 13. 1. Third layer plate 2. Groove (for heater) Heater 4. Groove (for reinforcing material) Reinforcement 6. Protection plate 91. Intake pipe 92. Exhaust pipe 93. In chamber 94. Substrate (work) 95. Hot plate 96. Heater 97. High frequency electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 柿崎 應岳 長野県埴科郡戸倉町大字磯部1490番地 株 式会社八光電機製作所内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Odaki Kakizaki 1490 Isobe, Okura, Tokura-cho, Hanishina-gun, Nagano Prefecture Inside Yakko Electric Works, Ltd.
Claims (3)
熱板において、アルミニウムプレートを重ね、接着して
３層構造とした熱板本体の異なるプレート層間の一方に
ヒーター、他方に補強材を組み込んだことを特徴とした
ＣＶＤ装置用熱板。1. A heating plate installed in a chamber of a CVD apparatus, wherein an aluminum plate is overlapped and bonded to form a three-layered structure. A hot plate for a CVD apparatus, characterized in that:
体とした請求項１のＣＶＤ装置用熱板。2. The hot plate for a CVD apparatus according to claim 1, wherein a plurality of the hot plates according to claim 1 are arranged in a plane and integrated.
載置したことを特徴とする請求項１、又は２のＣＶＤ装
置用熱板。3. The hot plate for a CVD apparatus according to claim 1, wherein an aluminum plate is mounted on the surface of the hot plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4891698A JP2883066B1 (en) | 1998-02-12 | 1998-02-12 | Hot plate for CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4891698A JP2883066B1 (en) | 1998-02-12 | 1998-02-12 | Hot plate for CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2883066B1 JP2883066B1 (en) | 1999-04-19 |
| JPH11233244A true JPH11233244A (en) | 1999-08-27 |
Family
ID=12816587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4891698A Expired - Fee Related JP2883066B1 (en) | 1998-02-12 | 1998-02-12 | Hot plate for CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2883066B1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002212734A (en) * | 2001-01-22 | 2002-07-31 | Mitsubishi Heavy Ind Ltd | Cleaning monitor method for plasma enhanced cvd system and plasma enhanced cvd system |
| EP1760170A2 (en) | 2005-09-05 | 2007-03-07 | Japan Pionics Co., Ltd. | Chemical vapor deposition apparatus |
| JP2014146597A (en) * | 2014-02-17 | 2014-08-14 | Sukegawa Electric Co Ltd | Substrate heating plate heater |
| WO2021210677A1 (en) * | 2020-04-17 | 2021-10-21 | 株式会社デンソー | Heater device |
-
1998
- 1998-02-12 JP JP4891698A patent/JP2883066B1/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002212734A (en) * | 2001-01-22 | 2002-07-31 | Mitsubishi Heavy Ind Ltd | Cleaning monitor method for plasma enhanced cvd system and plasma enhanced cvd system |
| EP1760170A2 (en) | 2005-09-05 | 2007-03-07 | Japan Pionics Co., Ltd. | Chemical vapor deposition apparatus |
| US8277893B2 (en) | 2005-09-05 | 2012-10-02 | Japan Pionics Co., Ltd. | Chemical vapor deposition apparatus |
| JP2014146597A (en) * | 2014-02-17 | 2014-08-14 | Sukegawa Electric Co Ltd | Substrate heating plate heater |
| WO2021210677A1 (en) * | 2020-04-17 | 2021-10-21 | 株式会社デンソー | Heater device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2883066B1 (en) | 1999-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI446403B (en) | Showerhead electrode assemblies for plasma processing apparatuses | |
| KR101163825B1 (en) | Electrostatic chuck and manufacturing method thereof | |
| JP6172301B2 (en) | Electrostatic chuck device | |
| TWI332035B (en) | Process kit design to reduce particle generation | |
| US7126092B2 (en) | Heater for wafer processing and methods of operating and manufacturing the same | |
| JP5447123B2 (en) | Heater unit and apparatus provided with the same | |
| US20090243236A1 (en) | Electrostatic chuck and manufacturing method thereof | |
| JP2009239300A (en) | Anodized substrate support | |
| JP2005228973A (en) | Thermal spraying member, electrode, and plasma processing apparatus | |
| JP2003224180A (en) | Wafer support member | |
| KR20100046909A (en) | Electrostatic chucking apparatus and method for manufacturing thereof | |
| JP6839314B2 (en) | Wafer mounting device and its manufacturing method | |
| JP2883066B1 (en) | Hot plate for CVD equipment | |
| JP5343802B2 (en) | Electrostatic chuck device | |
| JP2000021962A (en) | Electrostatic chuck device | |
| KR100224967B1 (en) | Static electricity absorption implements | |
| JP3207147B2 (en) | Substrate holding device for semiconductor processing | |
| TWI294686B (en) | Method of manufacturing displays and apparatus for manufacturing displays | |
| JP3657090B2 (en) | Heating body and semiconductor manufacturing apparatus using the same | |
| JP2001144167A (en) | Semiconductor holder | |
| JP4124589B2 (en) | Wafer holding device | |
| JP2011081932A (en) | Heater and device mounting the same | |
| JP2007309540A (en) | Heating plate, combined heating plate and heating furnace comprising the same | |
| JP3897668B2 (en) | Dummy substrate | |
| JP2003229369A (en) | Method of plasma stabilization and dummy substrate in vacuum processing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090205 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100205 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110205 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120205 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120205 Year of fee payment: 13 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120205 Year of fee payment: 13 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130205 Year of fee payment: 14 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |