JPH11169645A - Gas decomposing method - Google Patents
Gas decomposing methodInfo
- Publication number
- JPH11169645A JPH11169645A JP9341542A JP34154297A JPH11169645A JP H11169645 A JPH11169645 A JP H11169645A JP 9341542 A JP9341542 A JP 9341542A JP 34154297 A JP34154297 A JP 34154297A JP H11169645 A JPH11169645 A JP H11169645A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- treated
- plasma
- electric field
- gas decomposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 19
- 230000005684 electric field Effects 0.000 claims abstract description 19
- 230000001699 photocatalysis Effects 0.000 claims abstract description 5
- 239000011941 photocatalyst Substances 0.000 claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 230000000630 rising effect Effects 0.000 claims description 2
- 230000005284 excitation Effects 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 27
- 239000007787 solid Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 4
- -1 K4 NbO3 Inorganic materials 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical class S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 2
- 229910052815 sulfur oxide Inorganic materials 0.000 description 2
- 239000012855 volatile organic compound Substances 0.000 description 2
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003009 desulfurizing effect Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、窒素酸化物、硫黄
酸化物、揮発性有機化合物等の有害ガスをプラズマ励起
させて分解処理する、ガス分解処理方法及びその装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for decomposing a harmful gas such as nitrogen oxides, sulfur oxides, volatile organic compounds and the like by plasma excitation.
【０００２】[0002]
【従来の技術】近年環境配慮の声が高まり、窒素酸化
物、硫黄酸化物、揮発性有機化合物等の有害ガスを分解
処理する方法が多数提案されている。特にコロナ放電、
プラズマ放電等を利用して有害ガスを分解する技術は、
クリ−ンで低濃度の有害ガスにも対応できるものとして
注目されている。一方、上記放電を利用した処理方法
は、高いエネルギ−を投入する必要があり、処理効率の
向上と投入電力のバランスが実用化の鍵となっていた。2. Description of the Related Art In recent years, environmental concerns have been raised, and many methods for decomposing harmful gases such as nitrogen oxides, sulfur oxides, and volatile organic compounds have been proposed. Especially corona discharge,
The technology to decompose harmful gas using plasma discharge etc.
It is attracting attention as being clean and capable of coping with low-concentration harmful gases. On the other hand, the above-described processing method using discharge requires input of high energy, and the improvement of processing efficiency and the balance of input power have been the keys to practical application.
【０００３】例えば、特開平７−２６５６２号にハニカ
ム状電極とワイヤ型電極を組み合わせて用いる方法が、
特開平２−１１５０２４号に固体誘電体を用いる技術が
開示されている。しかし、まだ低電力化と処理効率に改
善の必要があった。[0003] For example, Japanese Patent Application Laid-Open No. 7-26562 discloses a method using a combination of a honeycomb electrode and a wire electrode.
Japanese Patent Application Laid-Open No. HEI 2-15024 discloses a technique using a solid dielectric. However, there was still a need to reduce power consumption and improve processing efficiency.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、上記問題を
鑑み、分解効率が改善されたガス分解処理方法を提供す
る。SUMMARY OF THE INVENTION In view of the above problems, the present invention provides a gas decomposition treatment method with improved decomposition efficiency.
【０００５】[0005]
【課題を解決するための手段】本発明のガス分解処理方
法は、対向電極間に電界を印加することにより該対向電
極間を流通している気体をプラズマ励起させてガス分解
処理を行う方法であって、該対向電極間に光触媒作用体
が設けられていることを特徴とする。The gas decomposition method according to the present invention is a method of performing a gas decomposition process by applying an electric field between opposed electrodes to excite a gas flowing between the opposed electrodes into plasma. Further, a photocatalyst is provided between the opposed electrodes.
【０００６】上記光触媒作用体は、ＴｉＯ2 、ＣｄＳ、
ＳｒＴｉＯ3 、Ｋ4 ＮｂＯ3 、ＺｒＯ2 、ＧａＰ、Ｚｎ
Ｏ等の光触媒を含有するものである。これらの光触媒と
他の材料の混合物によって構成されていてもよい。光触
媒作用体の大きさは特に限定されないが、被処理気体に
接触する面積が大きい方が有利であり、光触媒を含有す
る塗料を調整して電極対向面にコ−ティングすることに
より対向電極表面に層状に形成することが好ましい。被
処理気体への接触面積を大きくするために多孔質の層を
形成してもよい。The photocatalyst is TiO 2, CdS,
SrTiO3, K4 NbO3, ZrO2, GaP, Zn
It contains a photocatalyst such as O. It may be composed of a mixture of these photocatalysts and other materials. The size of the photocatalyst is not particularly limited, but it is advantageous to have a large area in contact with the gas to be treated. It is preferable to form a layer. A porous layer may be formed in order to increase the contact area with the gas to be treated.
【０００７】上記対向電極は通常の金属からなるものを
使用できる。また、その形状は特に問わないが、被処理
気体への接触面積を大きくして処理効率を向上させるた
めにハニカム構造の電極を採用すると有利である。The above-mentioned counter electrode can be made of an ordinary metal. The shape is not particularly limited, but it is advantageous to employ an electrode having a honeycomb structure in order to increase the contact area with the gas to be treated and improve the treatment efficiency.
【０００８】[0008]
【実施の態様】図１は本発明の装置例の斜視図である。
外部電極１は断面正六角形の角筒体が複数組み合わされ
てなるハニカム構造の代表例である。内部電極２は外部
電極１がなすハニカム構造のセル中央に位置している。
図２にハニカムセルの断面図を示す。図２（ａ）では光
触媒作用体３は内部電極２の対向面に形成されている。
図２（ｂ）では、ハニカムセルを構成する角筒体の中央
に六角形の角柱体の形状の内部電極２が位置し、外部電
極１と内部電極２の両方の表面を光触媒作用体３が覆っ
ている。FIG. 1 is a perspective view of an apparatus according to the present invention.
The external electrode 1 is a representative example of a honeycomb structure formed by combining a plurality of rectangular cylinders having a regular hexagonal cross section. The internal electrode 2 is located at the center of the cell of the honeycomb structure formed by the external electrode 1.
FIG. 2 shows a sectional view of a honeycomb cell. In FIG. 2A, the photocatalyst 3 is formed on the surface facing the internal electrode 2.
In FIG. 2 (b), a hexagonal prism-shaped internal electrode 2 is located at the center of a rectangular cylindrical body constituting a honeycomb cell, and both surfaces of the external electrode 1 and the internal electrode 2 are covered with a photocatalytic substance 3. Covering.
【０００９】被処理気体は図１に示した矢印の方向に流
れ、ハニカムセル内を通る間にプラズマ励起され、無害
な形態あるいは捕集されやすい形態に変換される。本発
明の装置中に、アンモニア、石灰等の脱硝脱硫剤、固定
化剤を吹き込んだり、本発明の装置の流路の先にバグフ
ィルタ−を設ける等の公知の手段により有害ガスを固定
化することが出来る。The gas to be treated flows in the direction of the arrow shown in FIG. 1, is excited by plasma while passing through the honeycomb cell, and is converted into a harmless form or a form easily collected. The harmful gas is fixed by a known means such as blowing a denitrifying desulfurizing agent such as ammonia or lime or a fixing agent into the apparatus of the present invention, or providing a bag filter at the end of the flow path of the apparatus of the present invention. I can do it.
【００１０】プラズマ励起された気体は、それ自身が全
波長域に渡って発光する性質を有する。本発明において
は、被処理気体自身がプラズマ励起によって発生するエ
ネルギ−を受けて光触媒体が活性化することにより被処
理気体に作用を及ぼし、さらにこの光触媒作用を受ける
気体は既に活性化された形態にあるため、非常に効率の
高い処理が実現する。The plasma-excited gas itself has the property of emitting light over the entire wavelength range. In the present invention, the gas to be treated itself acts on the gas to be treated by activating the photocatalyst by receiving the energy generated by the plasma excitation, and the gas to be treated is further activated. , Very efficient processing is realized.
【００１１】また、対向電極を構成する金属が直接向か
いあうと放電状態が不安定になり、処理効率が悪くなる
傾向があるため、これを防止する位置に固体誘電体を設
置するとよい。さらに、上記光触媒作用体が固体誘電体
を兼ねてもよい。図２に示した例では光触媒作用体が電
極対向面の一方または双方を覆っており、固体誘電体の
役割を兼ねている。固体誘電体と光触媒作用体が積層さ
れた形態でもよい。[0011] Further, when the metal constituting the counter electrode directly faces, the discharge state becomes unstable and the processing efficiency tends to be deteriorated. Therefore, it is preferable to dispose a solid dielectric at a position where this is prevented. Further, the photocatalyst may serve also as a solid dielectric. In the example shown in FIG. 2, the photocatalytic substance covers one or both of the electrode facing surfaces, and also serves as a solid dielectric. A form in which a solid dielectric and a photocatalyst are stacked may be used.
【００１２】上記固体誘電体としては、ポリテトラフル
オロエチレン、ポリエチレンテレフタレート等のプラス
チック、ガラス、二酸化珪素、酸化アルミニウム、二酸
化ジルコニウム、二酸化チタン等の金属酸化物、チタン
酸バリウム等の複酸化物等が挙げられる。上記固体誘電
体の比誘電率（２５°Ｃ環境下、以下同）は２以上であ
ることが好ましく、より好ましくは１０以上である。特
に好ましい例として、酸化チタニウム５〜５０重量％、
酸化アルミニウム５０〜９５重量％で混合された金属酸
化物皮膜、又は、酸化ジルコニウムを含有する金属酸化
物皮膜が挙げられる。上記被膜の厚みは１０〜１０００
μｍであるものが好ましい。Examples of the solid dielectric include plastics such as polytetrafluoroethylene and polyethylene terephthalate, glass, metal oxides such as silicon dioxide, aluminum oxide, zirconium dioxide and titanium dioxide, and double oxides such as barium titanate. No. The relative permittivity of the solid dielectric (at 25 ° C., hereinafter the same) is preferably 2 or more, more preferably 10 or more. Particularly preferred examples are titanium oxide 5 to 50% by weight,
A metal oxide film mixed with 50 to 95% by weight of aluminum oxide or a metal oxide film containing zirconium oxide may be used. The thickness of the coating is 10 to 1000
Those having a size of μm are preferred.
【００１３】図２中ｌで示した電極対向面の間隔（上記
光触媒作用体や後述の固体誘電体が存在する場合は、そ
れらの間隔）は５〜３０ｍｍが好ましい。５ｍｍ未満で
は被処理気体の流路として効率が悪く、３０ｍｍを超え
ると長時間安定化した放電状態を維持しにくく、省電力
化の観点からも好ましくない。The distance between the electrode-facing surfaces indicated by 1 in FIG. 2 (when the photocatalyst and the solid dielectric described below are present) is preferably 5 to 30 mm. If it is less than 5 mm, the efficiency of the flow path of the gas to be treated is poor, and if it exceeds 30 mm, it is difficult to maintain a stable discharge state for a long time, which is not preferable from the viewpoint of power saving.
【００１４】本発明では、上記対向電極間に電界を印加
することにより、該対向電極間を流通している気体をプ
ラズマ励起させてガス分解処理を行う。この際の電界と
しては、放電状態を安定させ、長時間連続した処理を行
うという観点から、電圧立ち上がり時間が１００μｓ以
下、電界強度が１〜１００ｋＶ／ｃｍ、周波数が１〜１
００ｋＨｚであるパルス電界を印加することが好まし
い。パルス電圧波形はインパルス型、方形パルス型、変
調型、正又は負のいずれかの極性側に電圧を印加する片
波状パルス型等が挙げられ、特に限定されない。In the present invention, the gas decomposition treatment is performed by applying an electric field between the opposed electrodes to excite the gas flowing between the opposed electrodes into plasma. As the electric field at this time, the voltage rising time is 100 μs or less, the electric field strength is 1 to 100 kV / cm, and the frequency is 1 to 1 from the viewpoint of stabilizing the discharge state and performing continuous processing for a long time.
It is preferable to apply a pulse electric field of 00 kHz. Examples of the pulse voltage waveform include, but are not particularly limited to, an impulse type, a square pulse type, a modulation type, and a single-wave pulse type in which a voltage is applied to either the positive or negative polarity side.
【００１５】上記パルス立ち上がり時間、電界強度、周
波数を満たすような高速パルス電界を用いることは放電
状態の安定化とガス分解効率の向上に極めて効果的であ
る。なお、ここでいう立ち上がり時間とは、電圧変化が
連続して正である時間を指すものとする。The use of a high-speed pulse electric field that satisfies the pulse rise time, electric field strength, and frequency is extremely effective in stabilizing the discharge state and improving the gas decomposition efficiency. Here, the rise time refers to a time during which the voltage change is continuously positive.
【００１６】また、上記パルス電界におけるパルス継続
時間は、５００μｓ以下であることが好ましい。５００
μｓを超えると放電状態が安定しにくくなる。より好ま
しくは、３μｓ〜２００μｓである。上記パルス継続時
間とは、ＯＮ、ＯＦＦの繰り返しからなるパルス電界に
おける、連続するＯＮ時間を言う。The pulse duration in the above-mentioned pulse electric field is preferably 500 μs or less. 500
If the time exceeds μs, it becomes difficult to stabilize the discharge state. More preferably, it is 3 μs to 200 μs. The pulse duration refers to a continuous ON time in a pulse electric field formed by repetition of ON and OFF.
【００１７】図３に、このようなパルス電界を印加する
際の電源の等価回路図を示す。図３にＳＷと記されてい
るのはスイッチとして機能する半導体素子である。上記
スイッチとして５００ｎｓ以下のターンオン時間及びタ
ーンオフ時間を有する半導体素子を用いることにより、
上記のような電界強度が１〜１００ｋＶ／ｃｍであり、
かつ、パルス立ち上がり時間が１００μｓ以下であるよ
うな高電圧かつ高速のパルス電界を実現することが出来
る。FIG. 3 shows an equivalent circuit diagram of a power supply when such a pulsed electric field is applied. SW in FIG. 3 is a semiconductor element functioning as a switch. By using a semiconductor device having a turn-on time and a turn-off time of 500 ns or less as the switch,
The electric field strength as described above is 1 to 100 kV / cm,
In addition, a high-voltage and high-speed pulse electric field having a pulse rise time of 100 μs or less can be realized.
【００１８】（実施例）酸化チタン（石原産業社製「Ｓ
ＴＳ−０１」）を蒸留水によって希釈することにより酸
化チタン濃度１０重量％のゾル溶液を調整した。テトラ
エトキシシラン３．４７ｇ、エタノ−ル６．５３ｇを混
合した溶液中に上記ゾル溶液１０ｇを滴下しながら加水
分解を行わせることにより、固形分濃度１０％の皮膜形
成用組成物を得た。内径２ｃｍ、長さ２０ｃｍのガラス
管の内面に皮膜形成用組成物を塗布して１１０度で１時
間硬化させることにより、光触媒作用体が内面コ−トさ
れたガラス（固体誘電体）管を得た。このガラス管内部
に銅製の棒状電極（径２ｍｍ）を位置させ、ガラス管外
周にアルミホイルを巻き付けた。ガラス管内に０．５％
ＮＯ／Ａｒガスを１００ｌ／分で流通させた状態で、棒
状電極とアルミホイル間に波高値９ｋＶ、周波数１５ｋ
Ｈｚ、パルス立ち上がり時間５μｓ、パルス幅１０μｓ
のインパルス型波形のパルス電界を印加することによ
り、処理を行った。ＦＴ−ＩＲにより処理前後のＮＯ、
ＮＯ2 ガスのピ−クを評価したところ、分解率は９７．
５％であった。(Example) Titanium oxide (“S” manufactured by Ishihara Sangyo Co., Ltd.)
TS-01 ") was diluted with distilled water to prepare a sol solution having a titanium oxide concentration of 10% by weight. Hydrolysis was performed while dropping 10 g of the above sol solution into a solution obtained by mixing 3.47 g of tetraethoxysilane and 6.53 g of ethanol to obtain a film-forming composition having a solid content of 10%. A glass (solid dielectric) tube coated with a photocatalyst is coated on the inner surface of a glass tube having an inner diameter of 2 cm and a length of 20 cm by applying the film-forming composition to the inner surface and curing the composition at 110 ° C. for 1 hour. Was. A copper rod-shaped electrode (diameter: 2 mm) was positioned inside the glass tube, and an aluminum foil was wound around the glass tube. 0.5% in glass tube
With the NO / Ar gas flowing at 100 l / min, a peak value of 9 kV and a frequency of 15 k are applied between the rod-shaped electrode and the aluminum foil.
Hz, pulse rise time 5μs, pulse width 10μs
The treatment was performed by applying a pulsed electric field having an impulse type waveform. NO before and after treatment by FT-IR,
When the peak of NO2 gas was evaluated, the decomposition rate was 97.
5%.
【００１９】（比較例）酸化チタンによる内面処理を行
っていないガラス管を用いて実施例と同様の処理を行っ
た。同様に評価したところ、分解率は８３．６％であ
り、光触媒による効果が明らかになった。(Comparative Example) The same treatment as in the example was performed using a glass tube that had not been subjected to the inner surface treatment with titanium oxide. As a result of the same evaluation, the decomposition rate was 83.6%, and the effect of the photocatalyst became clear.
【００２０】[0020]
【発明の効果】本発明では、対向電極間に光触媒作用体
が設けられている装置中でプラズマ処理を行うことによ
り、プラズマ励起エネルギーを効率的に使って非常に優
れたガス分解処理を可能とする。これによって投入する
電気的エネルギ−を最小限に抑えて実用レベルのガス分
解処理を行うことが出来る。さらに、特定の周波数で立
ち上がりの早い高速パルス電界を用いることにより、よ
り一層放電状態が安定し、高い分解効率で長時間安定し
た処理を行うことが出来る。According to the present invention, by performing plasma processing in an apparatus in which a photocatalytic substance is provided between the opposed electrodes, it is possible to use a plasma excitation energy efficiently to perform a very excellent gas decomposition processing. I do. As a result, it is possible to perform a gas decomposition process at a practical level while minimizing the electric energy to be supplied. Furthermore, by using a high-speed pulsed electric field having a rapid rise at a specific frequency, the discharge state can be further stabilized, and a stable process can be performed with high decomposition efficiency for a long time.
【００２１】[0021]
【図１】 ガス分解処理装置例の斜視図FIG. 1 is a perspective view of an example of a gas decomposition processing apparatus.
【図２】 ガス分解処理装置における固体誘電体設置例
の説明図FIG. 2 is an explanatory diagram of an example of setting a solid dielectric in a gas decomposition processing apparatus.
【図３】 パルス電界を発生させる電源の等価回路図FIG. 3 is an equivalent circuit diagram of a power supply that generates a pulse electric field.
１ 外部電極 ２ 内部電極 ３ 光触媒作用体 ４ 電源 1 external electrode 2 internal electrode 3 photocatalyst 4 power supply
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｂ０１Ｊ 35/02 Ｂ０１Ｄ 53/36 ＺＡＢＪ １０２Ｃ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI B01J 35/02 B01D 53/36 ZABJ 102C
Claims (4)
該対向電極間を流通している気体をプラズマ励起させて
ガス分解処理を行う方法であって、該対向電極間に光触
媒作用体が設けられていることを特徴とするガス分解処
理方法。1. A method for performing gas decomposition treatment by applying an electric field between opposed electrodes to excite a gas flowing between the opposed electrodes into plasma, wherein a photocatalytic substance is provided between the opposed electrodes. A gas decomposition treatment method.
なるものであることを特徴とする請求項１に記載のガス
分解処理方法。2. The gas decomposition treatment method according to claim 1, wherein the photocatalyst comprises titanium oxide.
形成されてなることを特徴とする請求項１又は２に記載
のガス分解処理方法。3. The gas decomposition treatment method according to claim 1, wherein the photocatalyst is formed in a layer on the surface of the counter electrode.
００μｓ以下、電界強度が１〜１００ｋＶ／ｃｍ、周波
数が１〜１００ｋＨｚであるパルス電界を印加すること
を特徴とする請求項１から３のいずれかに記載のガス分
解処理方法。4. A voltage rising time between the opposing electrodes is 1
4. The gas decomposition treatment method according to claim 1, wherein a pulse electric field having an electric field intensity of 1 to 100 kV / cm and a frequency of 1 to 100 kHz is applied for 00 [mu] s or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9341542A JPH11169645A (en) | 1997-12-11 | 1997-12-11 | Gas decomposing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9341542A JPH11169645A (en) | 1997-12-11 | 1997-12-11 | Gas decomposing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11169645A true JPH11169645A (en) | 1999-06-29 |
Family
ID=18346883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9341542A Withdrawn JPH11169645A (en) | 1997-12-11 | 1997-12-11 | Gas decomposing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11169645A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000068153A1 (en) * | 1999-05-06 | 2000-11-16 | Japan Science And Technology Corporation | Apparatus for oxidatively destructing trace injurious substance |
| WO2001019515A1 (en) * | 1999-09-09 | 2001-03-22 | Hitachi Zosen Corporation | Catalyst with discharge electrode or carrier |
| JP2003080034A (en) * | 2001-09-10 | 2003-03-18 | Mitsubishi Heavy Ind Ltd | Oxidation apparatus and method for maintaining the same |
| EP1669331A1 (en) * | 2004-12-09 | 2006-06-14 | Flabeg GmbH & Co. KG | Process for production of an anti-fogging element and device for activation of this element |
| JP2017096927A (en) * | 2007-12-12 | 2017-06-01 | ユニバーシティ オブ フロリダ リサーチ ファウンデーション，インク．Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｆｌｏｒｉｄａ Ｒｅｓｅａｔｃｈ Ｆｏｕｎｄａｔｉｏｎ，Ｉｎｃ． | Electric-field enhanced performance in catalysis and solid-state devices |
| CN112316679A (en) * | 2020-10-20 | 2021-02-05 | 中国科学院地球环境研究所 | Low-temperature plasma VOCs purification device and method |
-
1997
- 1997-12-11 JP JP9341542A patent/JPH11169645A/en not_active Withdrawn
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000068153A1 (en) * | 1999-05-06 | 2000-11-16 | Japan Science And Technology Corporation | Apparatus for oxidatively destructing trace injurious substance |
| US6896790B1 (en) | 1999-05-06 | 2005-05-24 | Japan Science & Technology Corporation | Apparatus for oxidatively destructing trace injurious substance |
| WO2001019515A1 (en) * | 1999-09-09 | 2001-03-22 | Hitachi Zosen Corporation | Catalyst with discharge electrode or carrier |
| JP2003080034A (en) * | 2001-09-10 | 2003-03-18 | Mitsubishi Heavy Ind Ltd | Oxidation apparatus and method for maintaining the same |
| EP1669331A1 (en) * | 2004-12-09 | 2006-06-14 | Flabeg GmbH & Co. KG | Process for production of an anti-fogging element and device for activation of this element |
| JP2017096927A (en) * | 2007-12-12 | 2017-06-01 | ユニバーシティ オブ フロリダ リサーチ ファウンデーション，インク．Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｆｌｏｒｉｄａ Ｒｅｓｅａｔｃｈ Ｆｏｕｎｄａｔｉｏｎ，Ｉｎｃ． | Electric-field enhanced performance in catalysis and solid-state devices |
| CN112316679A (en) * | 2020-10-20 | 2021-02-05 | 中国科学院地球环境研究所 | Low-temperature plasma VOCs purification device and method |
| CN112316679B (en) * | 2020-10-20 | 2022-02-25 | 中国科学院地球环境研究所 | Low-temperature plasma VOCs purification device and method |
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