JPH11162705A - Low-resistance chip resistor - Google Patents
Low-resistance chip resistorInfo
- Publication number
- JPH11162705A JPH11162705A JP9327523A JP32752397A JPH11162705A JP H11162705 A JPH11162705 A JP H11162705A JP 9327523 A JP9327523 A JP 9327523A JP 32752397 A JP32752397 A JP 32752397A JP H11162705 A JPH11162705 A JP H11162705A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thick
- resistance
- resistance value
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、矩形状の絶縁基板
の表面に、長方形状の厚膜抵抗体膜の長辺側端部に一対
の端子電極を形成して成る低抵抗チップ抵抗器に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-resistance chip resistor formed by forming a pair of terminal electrodes on the long-side end of a rectangular thick-film resistor film on the surface of a rectangular insulating substrate. Things.
【０００２】[0002]
【従来の技術】低抵抗チップ抵抗器は、バッテリーなど
の保護回路、電流検出回路などに使用され、その抵抗値
１００ｍΩ程度又はそれ以下の抵抗値であった。2. Description of the Related Art A low-resistance chip resistor is used for a protection circuit such as a battery, a current detection circuit, and the like, and has a resistance value of about 100 mΩ or less.
【０００３】通常、低抵抗化を達成するために、抵抗体
膜として定格電力が０．５〜１．０Ｗ必要であるため、
ＮｉやＮｉ−Ｃｒ材料のメッキ法で形成していた。従っ
て、工程が煩雑化し、またプリント配線基板への実装方
法の制約が発生するなど種々の問題を有していた。Usually, in order to achieve a low resistance, a rated power of 0.5 to 1.0 W is required as a resistor film.
It was formed by a plating method of Ni or Ni-Cr material. Therefore, there have been various problems such as complicated processes and restrictions on the method of mounting on a printed wiring board.
【０００４】これに対して、従来から知られる厚膜抵抗
体膜を利用した低抵抗チップ抵抗器は、特に、厚膜抵抗
体膜の材料の選定や、厚膜抵抗体膜の形状、即ち、厚膜
抵抗体膜と端子電極との接続構造などにより達成でき
る。On the other hand, a low-resistance chip resistor using a conventionally known thick-film resistor film is particularly suitable for selecting a material for the thick-film resistor film and for determining the shape of the thick-film resistor film, This can be achieved by a connection structure between the thick resistor film and the terminal electrode.
【０００５】例えば、低抵抗チップ抵抗器は、長辺形状
の絶縁基板の一対の長辺側端部に端子電極を形成し、長
方形状の厚膜抵抗体膜を、その長辺が端子電極に接続す
るようにして形成していた。For example, in a low-resistance chip resistor, a terminal electrode is formed at a pair of long-side ends of a long-sided insulating substrate, and a rectangular thick film resistor film is formed. It was formed so as to be connected.
【０００６】このような構造により、厚膜抵抗体膜の長
さ、即ち、厚膜抵抗体膜の短辺の長さＬと、厚膜抵抗体
膜の幅（厚膜抵抗体膜の長辺の長さ）Ｗとの比率（Ｌ／
Ｗ値）が１以下となり、低抵抗チップ抵抗器が達成され
る。With such a structure, the length of the thick film resistor film, that is, the length L of the short side of the thick film resistor film, and the width of the thick film resistor film (the long side of the thick film resistor film) Length) W and the ratio (L /
W value) is 1 or less, and a low-resistance chip resistor is achieved.
【０００７】このような低抵抗チップ抵抗器は、実際の
製造工程において、矩形状の絶縁基板が抽出することが
できる大型絶縁基板を用いて、各絶縁基板となる複数の
素子領域に対して一括的に各種導体膜の被着形成、厚膜
抵抗体膜の被着形成により製造される。Such a low-resistance chip resistor uses a large-sized insulating substrate from which a rectangular insulating substrate can be extracted in an actual manufacturing process, and collectively covers a plurality of element regions serving as insulating substrates. It is manufactured by depositing various conductor films and depositing a thick-film resistor film.
【０００８】具体的には、各素子領域の長辺側の一対の
端部に表面側端子電極及び裏面側端子電極を形成する。
次に、一対の表面側端子電極に跨がるように長方形状の
厚膜抵抗体膜を形成する。この時、厚膜抵抗体膜の長辺
の略全辺が表面側端子電極に重畳するように形成する。
次に、厚膜抵抗体膜上に１次オーバーガラス層を被着形
成する。次に、表面側端子電極に抵抗値測定装置のプロ
ーブを接触させて、一対の端子電極間の抵抗値を測定し
ながら、抵抗値を所定低抵抗値となるように、一次オー
バーガラス層越しに、レーザーを照射・走査を行い、厚
膜抵抗体膜の一部に所定長さの抵抗値調整溝を形成し
て、所定値の抵抗値を達成する。その後、一対の表面側
端子電極が露出するように２次オーバーガラス層を形成
する。次に、端子電極が形成される端面（絶縁基板の長
辺側の端面）が露出するように大型絶縁基板を１次分割
を行う。次に、１次分割によって露出した絶縁基板の長
辺側端面に、端面側端子電極を形成する。これにより、
絶縁基板の一対の長辺側端部には、表面、端面、裏面の
３つの面に跨がる端子電極が形成されることになる。Specifically, a front side terminal electrode and a back side terminal electrode are formed at a pair of ends on the long side of each element region.
Next, a rectangular thick-film resistor film is formed so as to straddle the pair of front-side terminal electrodes. At this time, the long-side resistor film is formed such that substantially all of the long sides overlap the front-side terminal electrode.
Next, a primary overglass layer is formed on the thick resistor film by deposition. Next, the probe of the resistance value measuring device is brought into contact with the surface side terminal electrode, and while measuring the resistance value between the pair of terminal electrodes, the resistance value becomes a predetermined low resistance value through the primary over-glass layer. Then, laser irradiation and scanning are performed to form a resistance adjusting groove having a predetermined length in a part of the thick resistor film, thereby achieving a predetermined resistance value. Thereafter, a secondary overglass layer is formed so that the pair of front-side terminal electrodes is exposed. Next, the large-sized insulating substrate is subjected to primary division so that the end surface on which the terminal electrode is formed (the end surface on the long side of the insulating substrate) is exposed. Next, an end surface side terminal electrode is formed on the long side end surface of the insulating substrate exposed by the primary division. This allows
At the pair of long side ends of the insulating substrate, terminal electrodes are formed to extend over the three surfaces of the front surface, the end surface, and the back surface.
【０００９】次に、２次分割を行い、個々の低抵抗チッ
プ抵抗器を抽出する。その後、必要に応じて、端子電極
の表面にメッキ処理を行う。Next, secondary division is performed to extract individual low-resistance chip resistors. Thereafter, if necessary, the surface of the terminal electrode is plated.
【００１０】[0010]
【発明が解決しようとする課題】上述の低抵抗チップ抵
抗器においては、その構造からアスペクト比（Ｌ／Ｗ）
が１以下であり、その結果、端子電極の幅が広くなる傾
向となる。これより、抵抗値測定用プローブの接触部分
によって、低抵抗の厚膜抵抗体膜の測定にばらつきが発
生する。In the above-mentioned low-resistance chip resistor, the aspect ratio (L / W) is low because of its structure.
Is 1 or less, and as a result, the width of the terminal electrode tends to increase. As a result, the measurement of the low-resistance thick resistor film varies depending on the contact portion of the resistance measurement probe.
【００１１】例えば、図４はアスペクト比率が１未満の
低抵抗チップ抵抗器の概略平面図である。例えば、一対
の端子電極２０ａ、２０ｂの幅の中央部分（点）に抵
抗値測定用のプローブを接触させて、低抵抗の厚膜抵抗
体膜３０を５０ｍΩとすべく、厚膜抵抗体膜３０の短辺
の中央部分の端部から、中央に向かって抵抗値調整溝５
０を形成したものである。このような低抵抗チップ抵抗
器の端子電極２０ａ、２０ｂの点〜の５つの対向す
る点にプローブを接触させて、抵抗値を測定し直した。
その結果は、端子電極の点（抵抗値調整溝５０を形成
した側の端部）では、抵抗値が５６ｍΩ、点（から
１／４Ｗの点）では、抵抗値が５３ｍΩ、点（Ｗの中
心部分）では、抵抗値が５０ｍΩ、点（から３／４
Ｗの点）では、抵抗値が４８ｍΩ、点（抵抗値調整溝
を形成していない側の端部）では、抵抗値が５１ｍΩで
あった。特に、抵抗体調整溝５０を形成していない点
及びにおいても、根本的に抵抗値が相違してしまうと
いう結果になる。For example, FIG. 4 is a schematic plan view of a low-resistance chip resistor having an aspect ratio of less than 1. For example, a resistance measuring probe is brought into contact with the central portion (point) of the width of the pair of terminal electrodes 20a and 20b, so that the low-resistance thick-film resistor film 30 has a thickness of 50 mΩ. The resistance value adjusting groove 5 from the end of the central portion of the short side of
0 is formed. The probe was brought into contact with the five opposing points of the terminal electrodes 20a and 20b of such a low-resistance chip resistor, and the resistance value was measured again.
As a result, at the point of the terminal electrode (the end on the side where the resistance value adjusting groove 50 is formed), the resistance value is 56 mΩ, and at the point (the point of 1/4 W), the resistance value is 53 mΩ, Part), the resistance value is 50 mΩ, and the point (from 3/4
At the point (W point), the resistance value was 48 mΩ, and at the point (the end on the side where the resistance value adjusting groove was not formed), the resistance value was 51 mΩ. In particular, also in the point that the resistor adjusting groove 50 is not formed, the result is that the resistance value is fundamentally different.
【００１２】これは、低抵抗チップ抵抗器の抵抗値調整
前の長方形状厚膜抵抗体膜の抵抗値が、対向しあう一対
の端子電極の幅方向の中心点を結ぶ２点間の抵抗値と、
対向しあう一対の端子電極の幅方向の一方の両端部付近
を結ぶ２点間の抵抗値とが変位し、その抵抗値の傾向
は、中心から両端部にかけて大きくなってしまう（厚膜
抵抗体膜の端部効果）ことに起因している。This is because the resistance value of the rectangular thick film resistor film before the resistance value adjustment of the low resistance chip resistor is equal to the resistance value between two points connecting the center points in the width direction of a pair of terminal electrodes facing each other. When,
The resistance between two points connecting the vicinity of one end in the width direction of the pair of terminal electrodes facing each other is displaced, and the tendency of the resistance increases from the center to both ends (thick film resistor). (Edge effect of the film).
【００１３】しかも、これらの測定は表面側端子電極で
行われるものに対して、実際のプリント配線基板上に低
抵抗チップ抵抗器を実装する場合には、裏面側端子電極
で行われる。従って、厚膜抵抗体膜と接続した表面側端
子電極から、実際にプリント配線基板に接続する裏面側
端子電極までに至るまでの間に抵抗成分が発生してしま
い、この端子電極の抵抗成分も低抵抗チップ抵抗器の抵
抗値の調整に大きな影響を与えてしまう。In addition, these measurements are performed with the front-side terminal electrodes, whereas when the low-resistance chip resistor is mounted on the actual printed wiring board, the measurement is performed with the rear-side terminal electrodes. Therefore, a resistance component is generated from the front-side terminal electrode connected to the thick-film resistor film to the back-side terminal electrode actually connected to the printed wiring board, and the resistance component of this terminal electrode also increases. This greatly affects the adjustment of the resistance value of the low-resistance chip resistor.
【００１４】本発明は、上述の問題的に鑑みて案出され
たものであり、その目的は、低抵抗チップ抵抗器の厚膜
抵抗体膜の抵抗値端部効果による影響を緩和して、抵抗
値調整が比較的簡単に行え、その抵抗値が安定化する低
抵抗チップ抵抗器を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to mitigate the effect of the resistance end effect of the thick-film resistor film of a low-resistance chip resistor. An object of the present invention is to provide a low-resistance chip resistor whose resistance can be adjusted relatively easily and whose resistance is stabilized.
【００１５】[0015]
【課題を解決するための手段】本発明は、矩形状の絶縁
基板上に、概略長方形状の厚膜抵抗体膜を形成し、絶縁
基板の一対の端部に前記厚膜抵抗体膜の長辺側端部と接
続する端子電極を形成して成る低抵抗チップ抵抗器にお
いて、前記厚膜抵抗体膜の短辺方向を結ぶ一対の端子電
極の２点間の抵抗値が、端子電極の中心部から両端部に
かけて順次小さくなっていることを特徴とする低抵抗チ
ップ抵抗器である。According to the present invention, a substantially rectangular thick film resistor film is formed on a rectangular insulating substrate, and the length of the thick film resistor film is formed at a pair of ends of the insulating substrate. In a low-resistance chip resistor formed with a terminal electrode connected to a side end, a resistance value between two points of a pair of terminal electrodes connecting short-side directions of the thick-film resistor film is equal to the center of the terminal electrode. A low-resistance chip resistor characterized in that the resistance gradually decreases from a portion to both ends.
【００１６】また、好ましくは、絶縁基板の長辺側の端
部に、基板の厚みを貫くように形成された凹部を形成
し、端子電極を絶縁基板の長辺側の端面の表面及び凹部
内にも端子電極となる導体膜を充填する。Preferably, a concave portion is formed at an end of the long side of the insulating substrate so as to penetrate the thickness of the substrate, and the terminal electrode is formed on the surface of the end surface on the long side of the insulating substrate and in the concave portion. Also, a conductive film serving as a terminal electrode is filled.
【００１７】[0017]
【作用】本発明によれば、一対の端子電極間に被着形成
された厚膜抵抗体膜の短辺方向の２点間の抵抗値が、中
央部で高く、両端部に離れるに従って順次小さくなって
いる。According to the present invention, the resistance value between two points in the short side direction of the thick-film resistor film formed between a pair of terminal electrodes is higher at the central portion and gradually decreases as the distance to both ends increases. Has become.
【００１８】従って、低抵抗チップ抵抗器の初期状態
（調整前の状態）の厚膜抵抗体膜においては、上述の厚
膜抵抗体膜の端部効果が相殺されることになる。従っ
て、端子電極の全体からすれば、端子電極のどの位置で
端子電極間の厚膜抵抗体膜の抵抗値を測定しても、実質
的に均一になる。従って、表面側端子電極の所定位置に
抵抗値測定用のプローブを当接して、レーザー光線を照
射しながら走査して、抵抗値調整溝を形成して、抵抗値
調整を行った場合、その抵抗変化率に直線性が得られ
る。この結果、簡単且つ確実な所定抵抗値への調整が可
能となる。Therefore, in the thick-film resistor film in the initial state (before adjustment) of the low-resistance chip resistor, the end effect of the thick-film resistor film described above is canceled. Therefore, the resistance value of the thick-film resistor film between the terminal electrodes at any position of the terminal electrodes is substantially uniform in the whole of the terminal electrodes. Therefore, when a resistance measurement probe is brought into contact with a predetermined position of the front surface side terminal electrode and scanned while irradiating a laser beam, a resistance adjustment groove is formed, and the resistance change is performed. Linearity is obtained in the rate. As a result, it is possible to easily and reliably adjust the resistance value to the predetermined resistance value.
【００１９】また、厚膜抵抗体膜中での電流密度が均一
化しているものと考えられるが、電流密度の均一化によ
って、電力消費も均一化するため、従来の低抵抗チップ
抵抗器に比較して、耐電力性が向上する。It is considered that the current density in the thick-film resistor film is made uniform. However, since the power consumption is made uniform by making the current density uniform, it is compared with the conventional low-resistance chip resistor. As a result, the power durability is improved.
【００２０】[0020]
【発明の実施の形態】以下、本発明の低抵抗チップ抵抗
器を図面に基づいて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS A low-resistance chip resistor according to the present invention will be described below with reference to the drawings.
【００２１】図１は、本発明の低抵抗チップ抵抗器の概
略平面図であり、図２は図中１のＸ−Ｘ線断面図であ
る。FIG. 1 is a schematic plan view of a low-resistance chip resistor according to the present invention, and FIG. 2 is a sectional view taken along line XX in FIG.
【００２２】図１において、１は絶縁基板、２ａ、２ｂ
は端子電極であり、３は厚膜抵抗体膜であり、４はオー
バーガラス層であり、５は抵抗値調整溝である。In FIG. 1, 1 is an insulating substrate, 2a, 2b
Is a terminal electrode, 3 is a thick resistor film, 4 is an over-glass layer, and 5 is a resistance value adjusting groove.
【００２３】絶縁基板１は、アルミナなどのセラミック
基板であり、この絶縁基板１の一対の長辺（Ｗ方向）の
端部には、基板１の厚み方向を貫通するように複数の凹
部１１が均等間隔に形成されている。また、この絶縁基
板１の端面の全面、即ち、凹部１１の内部及び凹部１１
間の絶縁基板１の端面には、各々１対の端子電極２ａ、
２ｂが形成されている。特に、この凹部１１内に形成さ
れる端子電極２ａ、２ｂの膜厚は、凹部１１間の端面の
端子電極２ａ、２ｂの膜厚よりも厚くなる。The insulating substrate 1 is a ceramic substrate such as alumina. A plurality of recesses 11 are formed at the ends of the pair of long sides (W direction) of the insulating substrate 1 so as to penetrate the substrate 1 in the thickness direction. They are formed at equal intervals. Further, the entire end surface of the insulating substrate 1, that is, the inside of the concave portion 11 and the concave portion 11
A pair of terminal electrodes 2a,
2b is formed. In particular, the thickness of the terminal electrodes 2a and 2b formed in the recess 11 is larger than the thickness of the terminal electrodes 2a and 2b on the end faces between the recesses 11.
【００２４】また、この端子電極２ａ、２ｂは、絶縁基
板１の長辺の略全幅に渡り形成されており、基板１の表
面、端面及び裏面の３つの面に連続するように形成され
ている。端子電極２ａ、２ｂは、Ａｇ系材料（Ａｇ単体
またはＡｇ−ＰｄなどのＡｇ合金）を主成分とする厚膜
導体膜からなり、必要に応じてその表面にメッキ層が被
覆されている。The terminal electrodes 2a, 2b are formed over substantially the entire width of the long side of the insulating substrate 1, and are formed so as to be continuous with three surfaces of the substrate 1, that is, the front surface, the end surface, and the rear surface. . The terminal electrodes 2a and 2b are made of a thick conductor film mainly composed of an Ag-based material (Ag alone or an Ag alloy such as Ag-Pd), and the surface thereof is coated with a plating layer as necessary.
【００２５】具体的には、Ａｇ系材料を含む導電性ペー
ストの印刷、焼きつけにより厚膜導体膜が形成され、そ
の後、Ｎｉメッキや半田メッキにより表面のメッキ層が
形成される。Specifically, a thick conductive film is formed by printing and baking a conductive paste containing an Ag-based material, and then a plating layer on the surface is formed by Ni plating or solder plating.
【００２６】また、絶縁基板１の長辺端部の表面に形成
された端子電極２ａ、２ｂ間には、厚膜抵抗体膜３が被
着形成されている。A thick resistor film 3 is formed between the terminal electrodes 2a and 2b formed on the surface of the long side end of the insulating substrate 1.
【００２７】厚膜抵抗体膜３は、概略長方形状であり、
その一対の長辺の略全幅が端子電極２ａ、２ｂに接続し
ている。ここで、厚膜抵抗体膜３の長さ（厚膜抵抗体膜
３の短辺の長さ＝端子電極２ａ、２ｂ間の距離）をＬ、
厚膜抵抗体膜の幅（厚膜抵抗体膜３の長辺の長さ）をＷ
とすると、アスペクト比（Ｌ／Ｗ）が１以下となってい
る。The thick resistor film 3 has a substantially rectangular shape.
Substantially the entire width of the pair of long sides is connected to the terminal electrodes 2a and 2b. Here, the length of the thick film resistor film 3 (the length of the short side of the thick film resistor film 3 = the distance between the terminal electrodes 2a and 2b) is L,
The width of the thick resistor film (the length of the long side of the thick resistor film 3) is W
Then, the aspect ratio (L / W) is 1 or less.
【００２８】厚膜抵抗体膜３は、Ａｇ−Ｐｄなどの導電
材料に、所定量の硼珪酸鉛ガラスなどを添加して、抵抗
値及び抵抗温度特性（ＴＣＲ）を調整した抵抗ペースト
の印刷、焼きつけにより形成される。The thick resistor film 3 is formed by adding a predetermined amount of lead borosilicate glass or the like to a conductive material such as Ag-Pd to print a resistance paste whose resistance value and resistance temperature characteristic (TCR) are adjusted. It is formed by baking.
【００２９】厚膜抵抗体膜３の表面には、硼珪酸鉛ガラ
スなどからなるオーバーガラス層４が被着形成される。
このオーバーガラス層４は、図２に示すように、１次オ
ーバーガラス層４１及び２次のオーバガラス層４２とか
ら成っている。On the surface of the thick-film resistor film 3, an over-glass layer 4 made of lead borosilicate glass or the like is formed.
As shown in FIG. 2, the overglass layer 4 includes a primary overglass layer 41 and a secondary overglass layer 42.
【００３０】１次オーバーガラス層４１及び厚膜抵抗体
膜３には、端子電極２ａ、２ｂ間の厚膜抵抗体膜３の抵
抗値を調整するための抵抗値調整溝５が形成されてい
る。この抵抗値調整溝５は、概略直線状をなし、好まし
くは、抵抗値調整溝５の両端部は厚膜抵抗体膜３が形成
された領域内に存在している。In the primary over-glass layer 41 and the thick-film resistor film 3, a resistance-adjusting groove 5 for adjusting the resistance value of the thick-film resistor film 3 between the terminal electrodes 2a and 2b is formed. . The resistance value adjusting groove 5 has a substantially linear shape. Preferably, both ends of the resistance value adjusting groove 5 are present in the region where the thick-film resistor film 3 is formed.
【００３１】このような抵抗値調整溝５が形成された１
次オーバガラス層４１上には、２次オーバーガラス層４
２が被着形成されている。この２次オーバーガラス層４
２は、例えば、硼珪酸鉛ガラスを主成分とするガラスペ
ーストを印刷、焼きつけにより形成する。The 1 in which such a resistance value adjusting groove 5 is formed.
On the secondary over-glass layer 41, the secondary over-glass layer 4
2 is formed. This secondary over-glass layer 4
2 is formed, for example, by printing and baking a glass paste containing lead borosilicate glass as a main component.
【００３２】上述のチップ抵抗器は、厚膜抵抗体膜３の
一対の長辺の略全幅で端子電極２ａ、２ｂと接続し、Ｌ
／Ｗが１未満となり、低抵抗のチップ抵抗器となる。The above-described chip resistor is connected to the terminal electrodes 2a and 2b over substantially the entire width of a pair of long sides of the thick-film resistor film 3, and
/ W is less than 1, resulting in a low-resistance chip resistor.
【００３３】しかも、厚膜抵抗体膜３の材料に、通常の
抵抗器で用いられる材料、酸化ルテニウムなどの金属酸
化物に比較して、導電率が非常に低いことから、抵抗値
１００ｍΩ以下という非常に低抵抗どなる。Moreover, the material of the thick-film resistor film 3 has a very low electrical conductivity as compared with the materials used in ordinary resistors and metal oxides such as ruthenium oxide, so that the resistance value is 100 mΩ or less. Very low resistance.
【００３４】次に、本発明の特徴的な構造を詳細に説明
する。Next, the characteristic structure of the present invention will be described in detail.
【００３５】本発明の低抵抗チップ抵抗器の抵抗値調整
される前の厚膜抵抗体膜３は、厚膜抵抗体膜３の短辺方
向を結ぶ一対の端子電極２ａ、２ｂの２点間の抵抗値
が、端子電極２ａ、２ｂの中心部分から端子電極の両端
部にかけて順次小さくなっている。Before the resistance value of the low-resistance chip resistor of the present invention is adjusted, the thick-film resistor film 3 is connected between two points of a pair of terminal electrodes 2 a and 2 b connecting the short-side direction of the thick-film resistor film 3. Are gradually reduced from the central portions of the terminal electrodes 2a and 2b to both end portions of the terminal electrodes.
【００３６】図１では、厚膜抵抗体膜３は膜厚が同一厚
みであり、その平面形状が、長方形状となっている。し
かし、端子電極２a 、２ｂと厚膜抵抗体膜３の長辺との
接続部分の形状が湾曲している。即ち、一対の端子電極
２ａ、２ｂの長辺側の中心部分を結ぶ２点間の距離が、
端子電極２ａ、２ｂの両端部部分を結ぶ２点間の距離が
小さくなるようになっている。In FIG. 1, the thick-film resistor film 3 has the same thickness, and has a rectangular planar shape. However, the shape of the connection between the terminal electrodes 2a and 2b and the long side of the thick-film resistor film 3 is curved. That is, the distance between two points connecting the central portions on the long sides of the pair of terminal electrodes 2a, 2b is:
The distance between two points connecting both end portions of the terminal electrodes 2a and 2b is reduced.
【００３７】また、図では省略しているが、このような
端子電極の構造であれば、厚膜抵抗体膜の形状が、完全
に長方形状である必要はなく概略楕円形状に近い形状で
あっても構わない。Although not shown in the drawing, with such a terminal electrode structure, the shape of the thick-film resistor film does not need to be completely rectangular, but is almost elliptical. It does not matter.
【００３８】これにより、一対の端子電極２ａ、２ｂの
長辺側の中心部分を結ぶ２点間の厚膜抵抗体膜３の抵抗
値が大きく、端子電極２ａ、２ｂの両端部部分を結ぶ２
点間の厚膜抵抗体膜の抵抗値が小さくなっているもの
の、厚膜抵抗体膜が固有的に持っている厚膜抵抗体膜の
端部効果により、厚膜抵抗体膜３全体をみれば、一対の
端子電極２ａ、２ｂ間の厚膜抵抗体膜３の抵抗値は、ど
の位置での測定においても、均一化させることができ
る。As a result, the resistance value of the thick-film resistor film 3 between the two points connecting the central portions on the long sides of the pair of terminal electrodes 2a, 2b is large, and the two electrodes connecting both end portions of the terminal electrodes 2a, 2b are connected.
Although the resistance value of the thick-film resistor film between the points is small, the entire thick-film resistor film 3 is seen due to the end effect of the thick-film resistor film inherent in the thick-film resistor film. For example, the resistance value of the thick-film resistor film 3 between the pair of terminal electrodes 2a and 2b can be made uniform at any position.
【００３９】これにより、抵抗値調整において、端子電
極２ａ、２ｂの所定位置に抵抗値測定用プローブを当接
して、抵抗値を測定しながら、抵抗値調整を行っても、
接触位置による抵抗値の変動がないため、確実な抵抗値
調整を行うことができる。Accordingly, in the resistance value adjustment, even if the resistance value measurement probe is brought into contact with the predetermined position of the terminal electrodes 2a and 2b and the resistance value is measured while adjusting the resistance value,
Since there is no variation in the resistance value due to the contact position, it is possible to perform a reliable resistance value adjustment.
【００４０】また、抵抗値調整溝５の長さに比例した抵
抗値を導出することができ、抵抗値調整による抵抗値変
化率に直線性を持たせることができ、抵抗値調整が非常
に簡単となる。Further, a resistance value proportional to the length of the resistance value adjusting groove 5 can be derived, and the rate of change of the resistance value by the resistance value adjustment can be made linear, so that the resistance value adjustment is very simple. Becomes
【００４１】上述の実施例では、端子電極２ａ、２ｂの
表面形状によって、一対の端子電極２ａ、２ｂの長辺側
の中心部分を結ぶ２点間の厚膜抵抗体膜３の抵抗値が大
きく、端子電極２ａ、２ｂの両端部部分を結ぶ２点間の
厚膜抵抗体膜の抵抗値が小さくしている。しかし、図３
の長辺方向の断面図に示すように厚膜抵抗体膜３の厚み
を中央部付近と長辺側の両端部付近とで変化を持たせる
ことにより、一対の端子電極２ａ、２ｂの長辺側の中心
部分を結ぶ２点間の厚膜抵抗体膜３の抵抗値が大きく、
端子電極２ａ、２ｂの両端部部分を結ぶ２点間の厚膜抵
抗体膜の抵抗値が小さくしている。即ち、厚膜抵抗体膜
３の長辺方向の中央部付近では薄く、長辺方向の両端部
分に厚くしている。In the above-described embodiment, the resistance value of the thick film resistor film 3 between two points connecting the central portions on the long sides of the pair of terminal electrodes 2a, 2b depends on the surface shape of the terminal electrodes 2a, 2b. The resistance value of the thick-film resistor film between two points connecting both end portions of the terminal electrodes 2a and 2b is reduced. However, FIG.
As shown in the cross-sectional view in the long side direction, the thickness of the thick film resistor film 3 is changed near the center and near both ends on the long side, so that the long sides of the pair of terminal electrodes 2a and 2b are formed. The resistance value of the thick-film resistor film 3 between two points connecting the central portions on the sides is large,
The resistance value of the thick-film resistor film between two points connecting both end portions of the terminal electrodes 2a and 2b is reduced. That is, the thick film resistor film 3 is thin near the center in the long side direction and thick at both end portions in the long side direction.
【００４２】このような厚膜抵抗体膜３の厚みは、抵抗
ペーストの印刷する際に、繰り返し印刷し、且つ両端部
分の印刷度合いを高めた選択的印刷によって達成するこ
とができる。この場合、一対の端子電極２ａ、２ｂの間
隔を同一にして、かつ厚膜抵抗体膜３の平面形状を実質
的に長方形状とすることもできる。The thickness of the thick-film resistor film 3 can be achieved by selective printing in which the resistance paste is repeatedly printed and the printing degree at both ends is increased. In this case, the distance between the pair of terminal electrodes 2a and 2b may be the same, and the planar shape of the thick-film resistor film 3 may be substantially rectangular.
【００４３】また、その厚膜抵抗体膜３を形成するにあ
たり、シート抵抗値が異なる複数種類の抵抗ペーストの
材料を選択的に印刷しても構わない。In forming the thick resistor film 3, a plurality of types of resist paste materials having different sheet resistance values may be selectively printed.
【００４４】即ち、Ａｇ−Ｐｄ金属成分に対するガラス
フリットの添加量を制御して、ガラスフリットの添加比
率の多い抵抗ペースト（高抵抗ペースト）で、端子電極
２ａ、２ｂの中央部付近の厚膜抵抗体膜３を形成し、ガ
ラスフリットの添加比率が少ない抵抗ペースト（低抵抗
ペースト）で端子電極２ａ、２ｂの両端部付近の厚膜抵
抗体膜を形成してもよい。That is, by controlling the amount of glass frit added to the Ag-Pd metal component, a thick film resistor near the center of the terminal electrodes 2a, 2b is formed of a resistor paste (high-resistance paste) having a high glass frit addition ratio. The body film 3 may be formed, and the thick film resistor film near both ends of the terminal electrodes 2a and 2b may be formed using a resistance paste (low resistance paste) having a small addition ratio of glass frit.
【００４５】例えば、図４における端子電極２０ａの
と端子電極２０ｂのとの２点間部分の高い抵抗値と端
子電極２０ａのと端子電極２０ｂのとの２点間部分
の最も低い抵抗値との差が４ｍΩであったのに対して、
上述の各構造では、その差を１ｍΩ以下とすることが可
能となる。For example, the high resistance value between the two points between the terminal electrode 20a and the terminal electrode 20b and the lowest resistance value between the two points between the terminal electrode 20a and the terminal electrode 20b in FIG. While the difference was 4mΩ,
In each of the above structures, the difference can be made 1 mΩ or less.
【００４６】このように、非常に微小に制御された厚膜
抵抗体膜３と端子電極２a 、２ｂと関係において、実際
にプリント配線基板上に実装するにあたり、端子電極２
ａ、２ｂ自身の抵抗成分が非常に重要となってくる。As described above, in relation to the very finely controlled thick-film resistor film 3 and the terminal electrodes 2a and 2b, when the terminal electrodes 2a and 2b are actually mounted on the printed wiring board,
The resistance components of a and 2b themselves become very important.
【００４７】この点、図１では、端子電極２ａ、２ｂが
形成される絶縁基板１の端面には、絶縁基板１の厚み方
向を貫くように形成した凹部１１が複数形成されてい
る。In this regard, in FIG. 1, a plurality of concave portions 11 are formed on the end surface of the insulating substrate 1 where the terminal electrodes 2 a and 2 b are formed so as to penetrate the insulating substrate 1 in the thickness direction.
【００４８】この端面部分の端子電極２ａ、２ｂは、従
来技術で説明したように、大型基板を１次分割した後、
この端面に厚膜導体ペーストを用いて印刷・塗布し、焼
き付けられて形成される。即ち、導電性ペーストを印刷
・塗布した時、この凹部１１内に導電性ペーストが溜ま
り、そのまま焼き付けされる。従って、凹部１１の内部
と凹部１１との間の端面部分での端子電極２ａ、２ｂの
厚みが異なり、凹部１１を形成することにより、平面状
の端面に端子電極２ａ、２ｂに形成することよりも、導
体厚みを厚くすることができる。即ち、端子電極２ａ、
２ｂの低抵抗化が達成できる。The terminal electrodes 2a and 2b at the end face portions are formed by first dividing the large substrate as described in the prior art.
This end face is formed by printing and applying using a thick film conductor paste and baking. That is, when the conductive paste is printed and applied, the conductive paste accumulates in the recess 11 and is baked as it is. Therefore, the thickness of the terminal electrodes 2a and 2b at the end face portion between the inside of the recess 11 and the recess 11 is different, and by forming the recess 11, the terminal electrodes 2a and 2b are formed on the planar end face. Also, the conductor thickness can be increased. That is, the terminal electrodes 2a,
2b can be reduced in resistance.
【００４９】このような凹部１１を複数配列し、波状の
端面としてもよい。また、絶縁基板１の中央部付近で凹
部１１の形成を「疎」に、絶縁基板１の両端部付近にか
けて凹部１１の形成を「密」に形成することにより、上
述した厚膜抵抗体膜の端部効果を相殺することができる
端子電極２ａ、２ｂとなる。A plurality of such recesses 11 may be arranged to form a wavy end face. Further, by forming the recess 11 near the center of the insulating substrate 1 “sparsely” and forming the recess 11 near the both ends of the insulating substrate 1 “densely”, the above-described thick film resistor film is formed. The terminal electrodes 2a and 2b can cancel the end effect.
【００５０】以上のように、本発明では、厚膜抵抗体膜
３の抵抗値の分布が厚膜抵抗体膜３の端部効果を相殺す
る抵抗分布になっている。従って、例えば、１次オーバ
ーコート４１を形成した直後に、厚膜抵抗体膜３の長辺
に接続した一対の端子電極２ａ、２ｂに抵抗値測定用プ
ローブ当て、その抵抗値を測定しながら、所定抵抗値に
調整するにあたり、端子電極間の電流の流れ方向を横切
るように調整溝５を形成すれば、調整溝５の長さに比例
した抵抗値を導出することができる。即ち、抵抗値調整
の直線性に優れた低抵抗チップ抵抗器となる。As described above, in the present invention, the distribution of the resistance value of the thick-film resistor film 3 has a resistance distribution that cancels out the end effect of the thick-film resistor film 3. Therefore, for example, immediately after the formation of the primary overcoat 41, a pair of terminal electrodes 2a and 2b connected to the long sides of the thick-film resistor film 3 are applied with a resistance-measurement probe, and the resistance is measured. In adjusting the resistance value to a predetermined value, if the adjustment groove 5 is formed so as to cross the direction of current flow between the terminal electrodes, a resistance value proportional to the length of the adjustment groove 5 can be derived. That is, a low-resistance chip resistor excellent in linearity of resistance value adjustment is obtained.
【００５１】しかも、端子電極２ａ、２ｂが形成される
絶縁基板１の端面部分に凹部１１が形成されているた
め、端子電極２ａ、２ｂの抵抗成分が非常に減少する。
即ち、抵抗値調整した抵抗値を、そのまま、端子電極２
ａ、２ｂの裏面側端子電極を用いて実装したプリント配
線基板でも忠実に再現することができる。Moreover, since the concave portion 11 is formed at the end face portion of the insulating substrate 1 on which the terminal electrodes 2a and 2b are formed, the resistance components of the terminal electrodes 2a and 2b are greatly reduced.
That is, the resistance value adjusted by the resistance value is directly used as the terminal electrode 2.
A printed wiring board mounted using the back side terminal electrodes a and 2b can be faithfully reproduced.
【００５２】尚、上述の製造工程において、抵抗値調整
工程を、一次オーバーガラス層を形成した後に行ってい
るが、一次オーバーガラス層４１を省略して、抵抗体膜
３に直接、抵抗調整溝５を形成しても構わない。In the above-described manufacturing process, the resistance adjusting step is performed after the formation of the primary over-glass layer, but the primary over-glass layer 41 is omitted and the resistance adjusting groove is directly formed on the resistor film 3. 5 may be formed.
【００５３】[0053]
【発明の効果】本発明によれば、アスペクト比が１以下
の厚膜抵抗体膜の一対の長辺に端子電極を接続した低抵
抗チップ抵抗器であって、厚膜抵抗体膜の短辺方向を結
ぶ一対の端子電極の２点間の抵抗値が、端子電極の中心
部分から端子電極の両端部にかけて順次小さくなってい
る。これにより、厚膜抵抗体膜の端部効果が相殺され、
その結果、端子電極の抵抗値測定位置の違いによる抵抗
値の変位が非常に小さくなり、所定抵抗値の調整をリニ
アリティーをもって行うことができる。According to the present invention, there is provided a low-resistance chip resistor in which terminal electrodes are connected to a pair of long sides of a thick-film resistor film having an aspect ratio of 1 or less. The resistance value between two points of the pair of terminal electrodes connecting the directions decreases gradually from the center of the terminal electrode to both ends of the terminal electrode. This offsets the end effect of the thick resistor film,
As a result, the displacement of the resistance value due to the difference in the resistance value measurement position of the terminal electrode becomes very small, and the predetermined resistance value can be adjusted with linearity.
【００５４】これより、低抵抗チップ抵抗器の抵抗調整
が非常に簡単になり、しかも、安定した抵抗値を簡単に
達成できることになる。As a result, the resistance adjustment of the low-resistance chip resistor becomes very simple, and a stable resistance value can be easily achieved.
【図１】本発明の低抵抗チップ抵抗器の平面図である。FIG. 1 is a plan view of a low-resistance chip resistor according to the present invention.
【図２】本発明の低抵抗チップ抵抗器の断面構造を断面
図である。FIG. 2 is a sectional view showing a sectional structure of a low-resistance chip resistor according to the present invention.
【図３】本発明の低抵抗チップ抵抗器の他の実施例を示
す断面図である。FIG. 3 is a sectional view showing another embodiment of the low-resistance chip resistor of the present invention.
【図４】従来の低抵抗チップ抵抗器の平面構造及びの抵
抗値測定の概念を示す概略図である。FIG. 4 is a schematic diagram showing a plan structure of a conventional low-resistance chip resistor and a concept of resistance measurement.
１・・・・・絶縁基板 ２ａ、２ｂ・・・・端子電極 ３・・・・・・・・厚膜抵抗体膜 ４１・・・・・一次オーバーガラス層 ４２・・・・・二次オーバーガラス層 1... Insulating substrate 2a, 2b... Terminal electrode 3... Thick-film resistor film 41... Primary over-glass layer 42. Glass layer
Claims (1)
厚膜抵抗体膜を形成し、絶縁基板の一対の端部に前記厚
膜抵抗体膜の長辺側端部と接続する端子電極を形成して
成る低抵抗チップ抵抗器において、 前記厚膜抵抗体膜の短辺方向を結ぶ一対の端子電極の２
点間の抵抗値が、端子電極の中心部から両端部にかけて
順次小さくなっていることを特徴とする低抵抗チップ抵
抗器。1. A terminal for forming a substantially rectangular thick-film resistor film on a rectangular insulating substrate, and connecting a pair of ends of the insulating substrate to a long-side end of the thick-film resistor film. In a low-resistance chip resistor formed with electrodes, a pair of terminal electrodes (2) connecting short-side directions of the thick-film resistor film are formed.
A low-resistance chip resistor, wherein a resistance value between points is gradually reduced from a center portion to both end portions of the terminal electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9327523A JPH11162705A (en) | 1997-11-28 | 1997-11-28 | Low-resistance chip resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9327523A JPH11162705A (en) | 1997-11-28 | 1997-11-28 | Low-resistance chip resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11162705A true JPH11162705A (en) | 1999-06-18 |
Family
ID=18200065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9327523A Pending JPH11162705A (en) | 1997-11-28 | 1997-11-28 | Low-resistance chip resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11162705A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016103519A (en) * | 2014-11-27 | 2016-06-02 | 京セラ株式会社 | Wiring board |
-
1997
- 1997-11-28 JP JP9327523A patent/JPH11162705A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016103519A (en) * | 2014-11-27 | 2016-06-02 | 京セラ株式会社 | Wiring board |
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