JPH1090300A - Electrostatic capacitance type physical quality sensor - Google Patents

Electrostatic capacitance type physical quality sensor

Info

Publication number
JPH1090300A
JPH1090300A JP8263732A JP26373296A JPH1090300A JP H1090300 A JPH1090300 A JP H1090300A JP 8263732 A JP8263732 A JP 8263732A JP 26373296 A JP26373296 A JP 26373296A JP H1090300 A JPH1090300 A JP H1090300A
Authority
JP
Japan
Prior art keywords
electrode
fixed electrode
same potential
movable
glass substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8263732A
Other languages
Japanese (ja)
Inventor
Masakazu Shiiki
正和 椎木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Corp
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corp, Omron Tateisi Electronics Co filed Critical Omron Corp
Priority to JP8263732A priority Critical patent/JPH1090300A/en
Publication of JPH1090300A publication Critical patent/JPH1090300A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends

Landscapes

  • Pressure Sensors (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an electrostatic capacitance type physical quality sensor which can prevent the melting integration of a movable electrode and a fixed electrode, in the anode jointing time. SOLUTION: On the surface of the first glass substrate 2, the first fixed electrode 9 and equipotential poles 13 are provided, while a recess 14 is provided on the surface of a weight part 6 opposing to the fixed electrode 9. The equipotential poles 13 are mode in the same potential with the weight part 6, and also with a movable electrode 7 on the surface of the weight part 6, accordingly. And the distance between a silicon substrate 1 and the equipotential poles 13 is made shorter than the distance between the weight part 6 and the fixed electrode 9. Consequently, even though an electrostatic attraction is generated between the fixed electrode 9 and the movable electrode 7 (the surface of the weight) when the silicon substrate 1 and the first glass substrate 2 is anode jointed, and the weight part 6 is drawn to the fixed electrode 9, the weight part 6 is contacted to the equipotential poles 13 at first, and does not contact with the fixed electrode 9. As a result, there is no potential difference between the weight part 6 and the equipotential poles 13, no current flows, and no arc discharge is generated. And, since both electrodes are not contacted, both electrodes are never fused.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、静電容量型物理量
センサに関するもので、より具体的には、表面に可動電
極を備えた変位可能な可動部を有する半導体基板と、固
定電極を有する絶縁基板とを陽極接合して一体化するこ
とにより構成される静電容量型物理量センサに関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a capacitance type physical quantity sensor, and more specifically, to a semiconductor substrate having a displaceable movable portion having a movable electrode on its surface, and an insulating substrate having a fixed electrode. The present invention relates to a capacitance-type physical quantity sensor formed by integrating an anode with a substrate.

【０００２】[0002]

【従来の技術】図７は、静電容量型物理量センサの一態
様である静電容量型加速度センサの従来の一例を示して
いる。同図に示すように、シリコン基板１の上面に第１
のガラス基板２を接合し、シリコン基板１の下面に第２
のガラス基板３を接合して一体化している。2. Description of the Related Art FIG. 7 shows a conventional example of a capacitance type acceleration sensor which is an embodiment of a capacitance type physical quantity sensor. As shown in FIG.
Glass substrate 2 is bonded to the lower surface of the silicon substrate 1
Glass substrates 3 are joined and integrated.

【０００３】シリコン基板１は、エッチング加工によ
り、周囲の平面ロ字状の支持枠４に対し、２本の梁部５
を介して重り部６を支持する状態に連結した構造として
いる。そして、重り部６の厚さを支持枠４の厚さより薄
くすることにより、重り部６と対向する両ガラス基板
２，３との間に、所定の隙間を形成している。これによ
り、重り部６に加速度が加わると梁部５が繞み、それに
ともない重り部６が変位するようになっている。[0003] The silicon substrate 1 is etched by two beam portions 5 with respect to a surrounding support frame 4 having a flat rectangular shape.
The structure is such that the weight portion 6 is connected to be supported via the. By making the thickness of the weight portion 6 smaller than the thickness of the support frame 4, a predetermined gap is formed between the weight portion 6 and the glass substrates 2 and 3 facing each other. Thus, when acceleration is applied to the weight portion 6, the beam portion 5 is surrounded, and the weight portion 6 is displaced accordingly.

【０００４】さらに、重り部６の上面が第１の可動電極
７となり、また下面が第２の可動電極８となる。また、
第１の可動電極７に対向する第１のガラス基板２の下面
には、第１の固定電極９が形成されている。同様に、第
２の可動電極８に対向する第２のガラス基板３の上面に
は、第２の固定電極１０が形成されている。そして、対
向する固定電極と可動電極との間には、距離に応じた静
電容量が発生している。なお、両固定電極９，１０は、
両可動電極７，８よりも一回り小さい寸法形状に形成さ
れている。Further, the upper surface of the weight portion 6 becomes the first movable electrode 7 and the lower surface becomes the second movable electrode 8. Also,
On the lower surface of the first glass substrate 2 facing the first movable electrode 7, a first fixed electrode 9 is formed. Similarly, a second fixed electrode 10 is formed on the upper surface of the second glass substrate 3 facing the second movable electrode 8. Then, a capacitance corresponding to the distance is generated between the fixed electrode and the movable electrode facing each other. In addition, both fixed electrodes 9 and 10 are
It is formed in a size and shape slightly smaller than both movable electrodes 7 and 8.

【０００５】係る構成のセンサに加速度が上記したセン
サに加わると、重り部６が加速度によって変位し、第１
の可動電極７と第１の固定電極９間の距離と、第２の可
動電極８と第２の固定電極１０間の距離がそれぞれ変化
する。これにより、対向する電極間の静電容量が変化す
る。よって、係る静電容量の変化から、上記対向する電
極間の距離の変位量、ひいては加速度を求めることがで
きる。そこで、静電容量を検出するため、各電極７〜１
０は、ガラス基板２，３にパターン形成された引出線及
びシリコン基板１を介して外部に取り出されるようにな
っている。When acceleration is applied to the sensor having the above configuration, the weight portion 6 is displaced by the acceleration, and the first
The distance between the movable electrode 7 and the first fixed electrode 9 and the distance between the second movable electrode 8 and the second fixed electrode 10 change. As a result, the capacitance between the opposing electrodes changes. Therefore, the amount of displacement of the distance between the opposing electrodes, and thus the acceleration, can be obtained from the change in the capacitance. Therefore, in order to detect the capacitance, each of the electrodes 7 to 1 is used.
Numeral 0 is taken out to the outside via the lead lines patterned on the glass substrates 2 and 3 and the silicon substrate 1.

【０００６】そして、上記した加速度センサを製造する
場合、シリコン基板１と両ガラス基板２，３とは、それ
ぞれ陽極接合を行って接合している。具体的には、接合
対象のシリコン基板１とガラス基板とを接触した状態で
シリコン基板１に正極の電圧をかけ、ガラス基板に負極
の電圧を印加するとともに、両基板間に所定の圧力を加
えることにより行う。When the above-described acceleration sensor is manufactured, the silicon substrate 1 and the two glass substrates 2 and 3 are joined by anodic bonding. Specifically, a positive voltage is applied to the silicon substrate 1 in a state where the silicon substrate 1 to be bonded and the glass substrate are in contact with each other, a negative voltage is applied to the glass substrate, and a predetermined pressure is applied between the two substrates. It is done by doing.

【０００７】[0007]

【発明が解決しようとする課題】ところで、この種のセ
ンサでは、センサ特性に鑑みると静電容量をできるだけ
大きくした方が好ましい。そして、周知のごとく静電容
量は、電極面積に比例し電極間距離（ギャップ）に反比
例するので、装置の小型化を図るためには、ギャップを
小さくするのが良い。By the way, in this type of sensor, it is preferable to make the capacitance as large as possible in view of the sensor characteristics. As is well known, the capacitance is proportional to the electrode area and inversely proportional to the distance between the electrodes (gap). Therefore, in order to reduce the size of the device, it is preferable to reduce the gap.

【０００８】しかしながら、シリコン基板１と第１のガ
ラス基板２とを陽極接合する際に両基板１，２間に印加
する高い電圧（数百Ｖ程度）により静電引力が発生し、
その静電引力により重り部６が第１の固定電極９側に引
き寄せられる。このとき、ギャップを小さくすると、重
り部６が引き寄せられた時に、重り部６（第１の可動電
極７）と、第１の固定電極９とが接触されるおそれが高
くなる。そして、重り部６が第１の固定電極９に接触さ
れる寸前では、第１の固定電極９と第１の可動電極７の
距離が極めて短くなるので、電位差が生じている両電極
間にアーク放電が発生する。このアーク放電により発生
される熱は約１０００℃〜２０００℃に達するので、両
電極は溶融し一体化してしまうおそれがある。また、こ
のように電極同士ではなくても、両固定電極９，１０の
寸法形状を両可動電極７，８よりも小さくしているた
め、可動電極が対向するガラス基板に溶融して接着一体
化するおそれもある。その結果、重り部６が第１の固定
電極９側に固着された状態のまま陽極接合されてしま
い、センサは不良品となる。However, when the silicon substrate 1 and the first glass substrate 2 are anodically bonded, a high voltage (approximately several hundred volts) applied between the substrates 1 and 2 generates an electrostatic attraction,
The weight 6 is drawn toward the first fixed electrode 9 by the electrostatic attraction. At this time, if the gap is reduced, the weight 6 (the first movable electrode 7) and the first fixed electrode 9 are more likely to come into contact with each other when the weight 6 is pulled. Immediately before the weight portion 6 comes into contact with the first fixed electrode 9, the distance between the first fixed electrode 9 and the first movable electrode 7 becomes extremely short. Discharge occurs. Since the heat generated by the arc discharge reaches about 1000 ° C. to 2000 ° C., both electrodes may be melted and integrated. Even if the electrodes are not electrodes as described above, the dimensions of the fixed electrodes 9 and 10 are made smaller than those of the movable electrodes 7 and 8, so that the movable electrodes are melted and bonded to the opposing glass substrate. There is also a risk of doing so. As a result, the anodic bonding is performed while the weight portion 6 is fixed to the first fixed electrode 9 side, and the sensor becomes defective.

【０００９】本発明は、上記した背景に鑑みてなされた
もので、その目的とするところは、上記した問題を解決
し、半導体基板と絶縁基板との陽極接合時に、半導体基
板の可動部（可動電極）と絶縁基板（固定電極）とが溶
着などして一体化してしまうおそれを可及的になくし、
歩留まりの向上を図ることができる静電容量型物理量セ
ンサを提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above background, and an object of the present invention is to solve the above-mentioned problems and to provide a movable part (movable part) of a semiconductor substrate at the time of anodic bonding between a semiconductor substrate and an insulating substrate. Electrode) and the insulating substrate (fixed electrode) are prevented from being integrated by welding or the like as much as possible.
An object of the present invention is to provide a capacitance-type physical quantity sensor capable of improving the yield.

【００１０】[0010]

【課題を解決するための手段】上記した目的を達成する
ため、本発明に係る静電容量型物理量センサでは、表面
に可動電極を備え、物理量によって変位する可動部を有
する半導体基板と、前記可動電極に対向する位置に固定
電極が設けられた絶縁基板とを備えた静電容量型物理量
センサであって、前記可動部に対向する前記絶縁基板の
表面所定位置に、前記可動電極と同電位となる同電位極
を形成し、半導体基板と絶縁基板とを陽極接合する際
に、前記可動電極と同電位極とが接触可能とした（請求
項１）。In order to achieve the above object, a capacitance type physical quantity sensor according to the present invention comprises a semiconductor substrate having a movable electrode on a surface and having a movable portion which is displaced by a physical quantity; An electrostatic capacitance type physical quantity sensor comprising: an insulating substrate provided with a fixed electrode at a position facing the electrode; and at a predetermined position on the surface of the insulating substrate facing the movable portion, the same potential as the movable electrode. When the same potential pole is formed and the semiconductor substrate and the insulating substrate are anodically bonded, the movable electrode and the same potential pole can be brought into contact with each other (claim 1).

【００１１】ここで、可動部とは、請求項で規定するよ
うに、物理量を受けて変位するものであり、具体的な一
例を示すと、加速度センサの場合には重り部となり、ま
た圧力センサの場合にはダイアフラムとなる。また、同
電位極を形成する位置は、可動部がその同電位極と最初
に当接する（固定電極や絶縁基板に接触する前）よう
に、加速度センサの場合には、固定電極の外周囲で特に
可動部の先端側に設けるのが好ましく、また、圧力セン
サの場合には固定電極の内周囲に設けるのが好ましい。Here, the movable portion is a member which is displaced by receiving a physical quantity as defined in the claims. To be specific, a movable portion is a weight portion in the case of an acceleration sensor, and a pressure sensor. In the case of, it becomes a diaphragm. In the case of an acceleration sensor, the position where the same potential pole is formed is such that the movable portion first contacts the same potential pole (before contacting the fixed electrode or the insulating substrate). In particular, it is preferably provided on the distal end side of the movable portion, and in the case of a pressure sensor, it is preferably provided around the inside of the fixed electrode.

【００１２】請求項１のような構成にすると、陽極接合
する際に生じる静電引力によって可動部（可動電極）
が、絶縁基板（固定電極）側に引き寄せられるが、可動
部は同電位極と接触する。すると、可動部（可動電極）
と同電位極との間では、電位差がないので、電流が流れ
ず、アーク放電なども生じない。よって、溶着一体化す
るのが抑制される。According to the first aspect of the present invention, the movable portion (movable electrode) is formed by electrostatic attraction generated at the time of anodic bonding.
Is attracted to the insulating substrate (fixed electrode) side, but the movable portion contacts the same potential pole. Then, the movable part (movable electrode)
Since there is no potential difference between the electrode and the same potential pole, no current flows and no arc discharge occurs. Therefore, welding and integration are suppressed.

【００１３】そして、陽極接合が終了すると、半導体基
板と絶縁基板間に電圧が印加されなくなるので、可動部
に加わっていた静電引力はなくなり、可動部は同電位極
から離れる。さらに、同電位極と固定電極とは絶縁状態
にあるため、両者ひいては固定電極とか同電極とが短絡
することはない。また、同電位極と固定電極間に静電容
量が発生することも考えられるが、両者は絶縁基板上に
パターン形成されており、相対的な位置関係は固定であ
るので、結局物理量が加えられた場合のセンサ出力の変
化は、その物理量の大きさに応じて変位した可動部の可
動電極と固定電極間の距離（静電容量）の変化に応じた
信号となる。よって、同電位極は、実際の測定時に悪影
響を与えない。さらにまた、同電位極は、パターニング
により簡単に形成でき、陽極接合後にその同電位極を切
断などする必要がないので、製造プロセス上簡便なもの
となる。When the anodic bonding is completed, no voltage is applied between the semiconductor substrate and the insulating substrate, so that the electrostatic attraction applied to the movable portion is eliminated, and the movable portion is separated from the same potential pole. Furthermore, since the same potential pole and the fixed electrode are in an insulated state, there is no short circuit between the same potential electrode and the fixed electrode. It is also conceivable that a capacitance is generated between the same potential pole and the fixed electrode, but since both are patterned on an insulating substrate and the relative positional relationship is fixed, a physical quantity is eventually added. In this case, a change in the sensor output becomes a signal corresponding to a change in the distance (capacitance) between the movable electrode and the fixed electrode of the movable section displaced according to the magnitude of the physical quantity. Therefore, the same potential pole does not adversely affect the actual measurement. Furthermore, the same potential pole can be easily formed by patterning, and it is not necessary to cut the same potential pole after anodic bonding, so that the manufacturing process is simplified.

【００１４】また、好ましくは、前記同電位極と、それ
に対向する前記可動部との距離が、前記固定電極とそれ
に対向する可動電極の表面との距離よりも短くするよう
にすることである（請求項２）。[0014] Preferably, the distance between the same potential pole and the opposing movable portion is shorter than the distance between the fixed electrode and the surface of the opposing movable electrode. Claim 2).

【００１５】そして、請求項２のように構成するために
は、各種の構造を採ることにより実現できるが、その一
例を示すと、例えば、前記固定電極に対向する前記可動
部の表面に凹部を設けることにより、請求項２の要件を
具備するようにしたり（請求項３）、前記固定電極の厚
さよりも、前記同電位極の厚さを厚くしたり（請求項
４）、前記同電位極に対向する前記可動電極部の表面
に、突起を設けることにより、請求項２の要件を具備す
るようにしたりすることができる（請求項５）。[0015] The structure as claimed in claim 2 can be realized by adopting various structures. In one example, for example, a concave portion is formed on the surface of the movable portion facing the fixed electrode. By providing the same, the requirement of claim 2 is satisfied (claim 3), the thickness of the same potential electrode is made thicker than the thickness of the fixed electrode (claim 4), or the same potential electrode is provided. By providing a projection on the surface of the movable electrode portion facing the above, the requirement of claim 2 can be satisfied (claim 5).

【００１６】これにより、確実に同電極と可動部とが最
初に接触する。しかも、接触によってそれ以上の可動部
の移動が抑制されるため、可動部（可動電極）と固定電
極とが接触することがなくなる。そして、請求項３のよ
うに構成した場合には、可動部に凹部を形成するため、
固定電極と同電位極を同じ厚さにすることが可能とな
る。すると、固定電極と同電位極を同時に形成すること
ができる。また、請求項４のように構成すると、半導体
基板側への加工は、従来と同様のプロセスで行える。ま
た、固定電極と同電位極とは１回の処理で製造すること
はできないが、２回に分けて成膜・パターニングを行う
ことにより簡単に行える。さらに請求項５のように可動
部側に別材料を成膜などすることによっても請求項２の
要件を具備できる。そして、そのように別部材を成膜す
る場合に、実施の形態で示したように、導電性の低い高
抵抗・絶縁性の物質を用いて成膜するようにすると、可
動部と同電位極とが接触した場合に、より確実に両者間
に電流が流れるのを防止できる。This ensures that the electrode and the movable portion first come into contact with each other. In addition, since further movement of the movable part is suppressed by the contact, the movable part (movable electrode) does not come into contact with the fixed electrode. Then, in the case of the configuration according to claim 3, in order to form a concave portion in the movable portion,
It is possible to make the fixed electrode and the same potential pole the same thickness. Then, the fixed electrode and the same potential pole can be formed simultaneously. Further, according to the structure of the fourth aspect, the processing on the semiconductor substrate side can be performed by the same process as the conventional one. Although the fixed electrode and the same potential electrode cannot be manufactured by one process, they can be easily manufactured by forming and patterning the film in two steps. Further, the requirement of claim 2 can be satisfied by forming another material on the movable portion side as in claim 5. When such a separate member is formed, as described in the embodiment mode, if a film is formed using a low-resistance, high-resistance, insulating material, the movable portion and the same potential electrode are used. When the contact is made, the current can be more reliably prevented from flowing between the two.

【００１７】さらに、前記同電位極の少なくとも表面が
前記固定電極より高融点材料で形成するようにしてもよ
い（請求項６）。実施の形態では、同電位極の表面にさ
らに所定の材質を成膜することにより実現している。こ
れにより、請求項２の作用効果に加えて、仮に何らかの
原因によって可動電極と固定電極との間にアーク放電が
生じて高温度になったとしても、可動部と接触している
同電位極が高融点であるため、それが溶融するこはな
く、可動部と同電位極は固着しない。Furthermore, at least the surface of the same potential electrode may be formed of a material having a higher melting point than the fixed electrode. In the embodiment, this is realized by further depositing a predetermined material on the surface of the same potential pole. Accordingly, in addition to the function and effect of claim 2, even if an arc discharge is generated between the movable electrode and the fixed electrode for some reason and the temperature becomes high, the same potential pole in contact with the movable portion is formed. Since it has a high melting point, it does not melt, and the movable portion and the same potential pole do not adhere.

【００１８】[0018]

【発明の実施の形態】図１は、本発明に係る静電容量型
物理量センサの第１の実施の形態を示している。同図に
示すように、本実施の形態では、加速度センサに適用し
た例を示しており、半導体基板である偏平な矩形状のシ
リコン基板１の上下面に、それぞれ絶縁基板たる第１，
第２のガラス基板２，３を陽極接合により接合一体化す
る。FIG. 1 shows a first embodiment of a capacitance type physical quantity sensor according to the present invention. As shown in the figure, the present embodiment shows an example in which the present invention is applied to an acceleration sensor, and the upper and lower surfaces of a flat rectangular silicon substrate 1, which is a semiconductor substrate, are first and second insulating substrates, respectively.
The second glass substrates 2 and 3 are joined and integrated by anodic bonding.

【００１９】中央のシリコン基板１は、従来と同様にそ
の上下両面から部分エッチングを行い、周囲を略ロ字状
の支持枠４に形成し、その支持枠４の内側に薄肉の梁部
５を介して重り部６を片持ち支持するように一体形成さ
れている。そして、重り部６の上面が第１の可動電極７
となり、下面が第２の可動電極８となる。さらに、梁部
５が連結された支持枠４の辺部分には、２つの矩形状の
貫通孔が形成されその貫通孔内にそれぞれ角錐台状の独
立部１１，１２が形成されている。The central silicon substrate 1 is partially etched from the upper and lower surfaces thereof in the same manner as in the prior art, and the periphery thereof is formed in a substantially square-shaped support frame 4. A thin beam 5 is provided inside the support frame 4. The weight portion 6 is integrally formed to support the weight portion 6 in a cantilever manner. The upper surface of the weight portion 6 is the first movable electrode 7
And the lower surface becomes the second movable electrode 8. Further, two rectangular through holes are formed in the side portions of the support frame 4 to which the beam portions 5 are connected, and truncated pyramid-shaped independent portions 11 and 12 are respectively formed in the through holes.

【００２０】また、重り部６は支持枠４に比べて厚みが
薄くなるように上下方向から削られており、重り部６の
上下両面は、それぞれ第１，第２のガラス基板２，３か
ら所定距離だけ離れる。これにより、センサに加速度が
加わると、梁部５が撓み重り部６が変位できるようにな
っている。The weight portion 6 is cut from the upper and lower directions so as to be thinner than the support frame 4, and the upper and lower surfaces of the weight portion 6 are separated from the first and second glass substrates 2 and 3, respectively. Separate by a predetermined distance. Thus, when acceleration is applied to the sensor, the beam portion 5 bends and the weight portion 6 can be displaced.

【００２１】一方、重り部６に対向する第１のガラス基
板２の下面には第１の固定電極９が形成され、また、重
り部６に対向する第２のガラス基板３の上面には第２の
固定電極１０が形成されている。よって、加速度にとも
なう重り部６の変位にともない、第１，第２の可動電極
７，８と第１，第２の固定電極９，１０の距離が変化
し、両電極間の静電容量が変化する。そして、係る静電
容量の変化に応じた信号を外部に取り出すために、例え
ば同図（Ｂ）に示すように、第１のガラス基板１の下面
に、第１の固定電極９から連続して引き出された引出線
９ａを形成し、その引出線９ａの先端を独立部１１に位
置させる。また、第２のガラス基板３の上面には、第２
の固定電極１０に連続して引き出された引出線１０ａを
形成し、その引出線１０ａの先端を独立部１２に位置さ
せる。なお、この引出線９ａと第１の固定電極９並びに
引出線１０ａと第２の固定電極１０は、蒸着或いはスパ
ッタするとともに、パターニングすることによりそれぞ
れ同時に形成することができる。On the other hand, a first fixed electrode 9 is formed on the lower surface of the first glass substrate 2 facing the weight portion 6, and a first fixed electrode 9 is formed on the upper surface of the second glass substrate 3 facing the weight portion 6. Two fixed electrodes 10 are formed. Accordingly, the distance between the first and second movable electrodes 7 and 8 and the first and second fixed electrodes 9 and 10 changes with the displacement of the weight portion 6 accompanying the acceleration, and the capacitance between the two electrodes becomes smaller. Change. Then, in order to extract a signal corresponding to the change in the capacitance to the outside, for example, as shown in FIG. 2B, the signal is continuously provided from the first fixed electrode 9 on the lower surface of the first glass substrate 1. The drawn out line 9a is formed, and the tip of the drawn out line 9a is located in the independent portion 11. In addition, the second glass substrate 3
A lead wire 10a that is continuously drawn out from the fixed electrode 10 is formed, and the tip of the lead wire 10a is positioned in the independent part 12. The lead 9a and the first fixed electrode 9 and the lead 10a and the second fixed electrode 10 can be formed simultaneously by vapor deposition or sputtering and by patterning.

【００２２】なお、同図（Ｂ）は、第１のガラス基板２
のみを取り外した（ガラス基板の下面にパターン形成し
た電極等は残す）状態の平面図である。そしてさらに独
立部１１，１２に対向するガラス基板２，３の部位に
は、貫通孔２ａ，３ａを形成するとともに内部に導電材
１５を設け、独立部１１，１２と導通状態にする。これ
により、第１の固定電極９は、引出線９ａから貫通孔２
ａ内の導電材１５を介して外部に引き出され、また、第
２の固定電極１０は、引出線１０ａ，独立部１２さらに
は、所定のガラス基板に形成された貫通孔内の導電材を
介して外部に引き出される。同様に、第１，第２の可動
電極７，８は、シリコン基板１を介し、さらに必要に応
じて所定のガラス基板に別途形成した貫通孔内に設けた
導電材を介して外部に引き出すことができるようになっ
ている。なお、係る構成は、従来の加速度センサと同様
であるので、各部のより詳細な説明や動作原理等の説明
は省略する。FIG. 2B shows the first glass substrate 2.
FIG. 3 is a plan view showing a state in which only electrodes are removed (an electrode or the like patterned on the lower surface of the glass substrate is left). Further, through holes 2a and 3a are formed in the portions of the glass substrates 2 and 3 opposite to the independent portions 11 and 12, and a conductive material 15 is provided inside the through holes 2a and 3a. As a result, the first fixed electrode 9 is connected to the through hole 2
a. The second fixed electrode 10 is drawn out to the outside via the conductive material 15 inside the lead wire 10a, the independent portion 12, and further through the conductive material in the through hole formed in the predetermined glass substrate. To the outside. Similarly, the first and second movable electrodes 7 and 8 are drawn out through the silicon substrate 1 and, if necessary, through a conductive material provided in a through hole separately formed in a predetermined glass substrate. Is available. Since such a configuration is the same as that of a conventional acceleration sensor, a more detailed description of each unit and a description of an operation principle and the like will be omitted.

【００２３】ここで、本発明では第１のガラス基板２の
下面に、第１の固定電極９の外周囲を囲むようにして、
同電位極１３がパターン形成されている。この同電位極
１３は重り部６に対向する領域を含むように形成されて
いる。そして同電位極１３のパターン形状は、第１の固
定電極９の外周囲から所定の距離をおいて、ほぼ全周を
囲む略ロ字状の本体部分１３ａと、その本体部分１３ａ
から支持枠４に向けて延長形成された連結部分１３ｂと
から構成される。そして、本体部分１３ａは、第１の固
定電極９と絶縁するため、引出線９ａの形成領域は未形
成となっている。つまり、正確には、ロ字状（閉塞され
た無端状）ではなく、一部が破断された形状となってい
る。また、連結部分１３ｂの先端部は、支持枠４の形成
位置（対向位置）まで達している。Here, in the present invention, on the lower surface of the first glass substrate 2, the outer periphery of the first fixed electrode 9 is surrounded.
The same potential pole 13 is formed in a pattern. The same potential pole 13 is formed so as to include a region facing the weight portion 6. The pattern shape of the same potential electrode 13 includes a substantially rectangular main body portion 13a surrounding substantially the entire circumference at a predetermined distance from the outer periphery of the first fixed electrode 9, and a main body portion 13a.
And a connecting portion 13b extending toward the support frame 4 from the connecting portion 13b. Since the main body portion 13a is insulated from the first fixed electrode 9, the formation region of the lead wire 9a is not formed. In other words, to be precise, it is not a square shape (closed endless shape) but a partially broken shape. The tip of the connecting portion 13b has reached the position where the support frame 4 is formed (opposed position).

【００２４】なお、本例のように、第１の固定電極９の
外周囲に同電位極１３を設置したのは、重り部６は梁部
５が撓むことにより変位するため、陽極接合時に重り部
６の先端側（周縁）が先に第１のガラス基板（第１の固
定電極９）に接触するおそれが高いからである。The reason why the same potential pole 13 is provided around the first fixed electrode 9 as in this example is that the weight portion 6 is displaced by the bending of the beam portion 5, so that the weight portion 6 is displaced by anodic bonding. This is because the tip side (peripheral edge) of the weight portion 6 is likely to come in contact with the first glass substrate (the first fixed electrode 9) first.

【００２５】これにより、第１のガラス基板２とシリコ
ン基板１とを接触させると、連結部分１３ｂの先端は支
持枠４に対向する位置まで形成されているので、支持枠
４と接続される。つまり、同電位極１３は、支持枠４，
梁部５，重り部６と電気的に導通状態となり、さらには
重り部６の表面に設けられた第１の可動電極７とも導通
状態となる。そして、それら支持枠４，梁部５，重り部
６並びに第１の可動電極７は、シリコン基板で形成され
ており電位差がないので、結局同電位極１３と第１の可
動電極７は同電位となる。Thus, when the first glass substrate 2 and the silicon substrate 1 are brought into contact with each other, the tip of the connecting portion 13b is formed up to a position facing the support frame 4 and is connected to the support frame 4. That is, the same potential pole 13 is
The beam 5 and the weight 6 are electrically connected, and further, the first movable electrode 7 provided on the surface of the weight 6 is also electrically connected. Since the support frame 4, the beam portion 5, the weight portion 6, and the first movable electrode 7 are formed of a silicon substrate and have no potential difference, the same potential pole 13 and the first movable electrode 7 eventually have the same potential. Becomes

【００２６】上記構成にすることによって、シリコン基
板１と第１のガラス基板２とを陽極接合する際に、重り
部６（第１の可動電極７）と、第１のガラス基板２（第
１の固定電極９）間で生じる静電引力により、重り部６
が第１の固定電極９に引き寄せられたとしても、重り部
６（第１の可動電極７）と同電位極１３が接触する。す
ると、第１の可動電極７と同電位極１３との間では、電
位差がないので、電流が流れず、電極間の溶着が防止で
きる。また、図示するように、第１の固定電極９の寸法
形状が第１の可動電極７のそれよりも小さいため、従来
であれば、重り部６（第１の可動電極７）の周囲と第１
のガラス基板との間で陽極接合されるおそれがあるが、
その部分に同電位極１３が存在するため、係るおそれも
抑制される。With the above configuration, when the silicon substrate 1 and the first glass substrate 2 are anodically bonded, the weight portion 6 (the first movable electrode 7) and the first glass substrate 2 (the first Due to the electrostatic attractive force generated between the fixed electrodes 9)
Is attracted to the first fixed electrode 9, the weight portion 6 (the first movable electrode 7) comes into contact with the same potential electrode 13. Then, there is no potential difference between the first movable electrode 7 and the same potential pole 13, so that no current flows and welding between the electrodes can be prevented. Further, as shown in the figure, since the dimension of the first fixed electrode 9 is smaller than that of the first movable electrode 7, in the related art, the periphery of the weight portion 6 (the first movable electrode 7) is 1
Anodic bonding between the glass substrate
Since the same potential pole 13 exists in that portion, such a possibility is also suppressed.

【００２７】なお、本形態では、同電位極１３のパター
ン形状は第１の固定電極９の外周囲のほぼ全体を囲む形
状としているが、本発明では必ずしも全周囲を囲む必要
はなく、一部でよい。すなわち、陽極接合時に最初に重
り部（第１の可動電極７）が接触する部分となる可能性
の高い先端側（梁部５と反対側）の対向面に同電位極１
３を形成していればよい。但し、通常の加速度に伴う変
位では、重り部６の先端側の変位量が最も大きいが、陽
極接合時には、静電引力によって、重り部６が水平状態
を維持しながら上昇するおそれもあるので、本実施の形
態のように、固定電極の周囲全体を囲む形状にしたほう
が、確実に重り部を固定電極やガラス基板と溶着・接合
させないようにすることができるので好ましい。In this embodiment, the pattern of the same potential electrode 13 is formed so as to surround substantially the entire outer periphery of the first fixed electrode 9, but in the present invention, it is not always necessary to surround the entire periphery. Is fine. That is, the same potential electrode 1 is provided on the opposing surface on the tip end side (opposite side of the beam portion 5) which is likely to be the portion where the weight portion (the first movable electrode 7) first comes into contact during anodic bonding.
3 should just be formed. However, in the displacement accompanying the normal acceleration, the displacement amount on the tip side of the weight portion 6 is the largest, but at the time of anodic bonding, the weight portion 6 may rise while maintaining a horizontal state due to electrostatic attraction. As in the present embodiment, it is preferable to have a shape surrounding the entire periphery of the fixed electrode because the weight can be reliably prevented from being welded and joined to the fixed electrode or the glass substrate.

【００２８】図２は、本発明に係る静電容量型物理量セ
ンサの第２の実施の形態を示している。本実施の形態
は、上記した第１の実施の形態を基本とし、さらに、重
り部６の上面に凹部１４を設けている。この凹部１４
は、部分エッチングをすることにより簡単に形成でき
る。この凹部１４は、長方形の開口となるように形成さ
れており、第１の固定電極９に対向する領域よりもやや
大きめの領域に形成されている。具体的には、第１の固
定電極９は凹部１４と対向し、同電位極１３は重り部６
の上面周囲（凹部１４の未形成領域）と対向する。これ
により、重り部６（第１の可動電極）と第１の固定電極
９との距離（凹部１４の底面１４ａと第１の固定基板９
の距離）よりも、重り部６と同電位極１３との距離（凹
部１４の未形成領域の面と同電位極１３との距離）を短
くしている。FIG. 2 shows a second embodiment of the capacitance type physical quantity sensor according to the present invention. This embodiment is based on the above-described first embodiment, and further has a concave portion 14 on the upper surface of the weight portion 6. This recess 14
Can be easily formed by partial etching. The concave portion 14 is formed so as to have a rectangular opening, and is formed in a region slightly larger than a region facing the first fixed electrode 9. Specifically, the first fixed electrode 9 faces the recess 14, and the same potential pole 13
(The area where the concave portion 14 is not formed). Thereby, the distance between the weight portion 6 (first movable electrode) and the first fixed electrode 9 (the bottom surface 14a of the concave portion 14 and the first fixed substrate 9
(The distance between the weight 6 and the same potential pole 13) (the distance between the surface of the region where the concave portion 14 is not formed and the same potential pole 13).

【００２９】上記のように構成にすると、シリコン基板
１と第１のガラス基板２とを陽極接合する際に発生する
静電引力によって、重り部６が第１の固定電極９に引き
寄せられたとしても、重り部６が第１の固定電極９と接
触するよりも先に、必ず重り部６と同電位極１３が接触
して重り部６のそれ以上の移動が制止される。つまり、
第１の実施の形態では、第１の可動電極７と同電位極１
３とが接触した後でも、静電引力によりさらに第１の可
動電極が第１の固定電極９側に引き寄せられ、接触する
可能性が残っているが、本実施の形態では、重り部６
（第１の可動電極７）と、同電位極１３の距離を短くし
たため、第１の可動電極７と第１の固定電極９が物理的
に接触するのが確実に防止でき、不良品の発生を可及的
に抑制できる。With the above configuration, it is assumed that the weight portion 6 is attracted to the first fixed electrode 9 by the electrostatic attraction generated when the silicon substrate 1 and the first glass substrate 2 are anodically bonded. Also, before the weight portion 6 comes into contact with the first fixed electrode 9, the weight portion 6 always comes into contact with the same potential pole 13, and further movement of the weight portion 6 is stopped. That is,
In the first embodiment, the first movable electrode 7 and the same potential electrode 1
Although the first movable electrode is further attracted to the first fixed electrode 9 side by the electrostatic attraction even after the contact with the third electrode 3, there is a possibility that the first movable electrode comes into contact with the first movable electrode 9.
Since the distance between the (first movable electrode 7) and the same potential electrode 13 is shortened, physical contact between the first movable electrode 7 and the first fixed electrode 9 can be reliably prevented, and defective products are generated. Can be suppressed as much as possible.

【００３０】図３は本発明に係る静電容量型物理量セン
サの第３の実施の形態を示している。上記した第２の実
施の形態では、重り部の表面に凹部を形成することによ
って、重り部と固定電極の距離よりも、重り部と同電位
極の距離を短くしていたが、本形態では、同図に示すよ
うに、同電位極２３の厚みを第１の固定電極９の厚みよ
りも厚くなるように形成することによって、重り部６と
第１の固定電極９間の距離より、重り部６と同電位極２
３間の距離を短くなるようにしている。FIG. 3 shows a third embodiment of the capacitance type physical quantity sensor according to the present invention. In the above-described second embodiment, the distance between the weight portion and the same potential electrode is shorter than the distance between the weight portion and the fixed electrode by forming a concave portion on the surface of the weight portion. As shown in the drawing, the thickness of the same potential electrode 23 is formed to be larger than the thickness of the first fixed electrode 9, so that the weight between the weight portion 6 and the first fixed electrode 9 is increased. Same potential pole 2 as part 6
The distance between the three is shortened.

【００３１】つまり、第１の実施の形態を基本とし、第
１の可動電極７に対向する第１のガラス基板２の下面
に、メタルをスパッタ等するとともにパターニングする
ことにより第１の固定電極９と同電位極２３をパターン
形成する。この時、第１の実施の形態では、固定電極９
と同電位極１３とを同時に形成したが、本形態では、第
１の固定電極９と同電位極２３の厚さが異なることか
ら、２回に分けてスパッタ及びパターニングすることに
より、それぞれを所定形状に形成することができる。な
お、厚さが異なるだけで、平面形状は、第１の実施の形
態と同様のものを用いることができる。That is, based on the first embodiment, the first fixed electrode 9 is formed on the lower surface of the first glass substrate 2 facing the first movable electrode 7 by sputtering metal and patterning. And the same potential pole 23 is patterned. At this time, in the first embodiment, the fixed electrode 9
And the same potential electrode 13 are formed at the same time. However, in this embodiment, since the thickness of the first fixed electrode 9 and the same potential electrode 23 are different from each other, sputtering and patterning are performed twice so that It can be formed into a shape. Note that the same planar shape as that of the first embodiment can be used except for the thickness.

【００３２】係る構成にすると、第２の実施の形態と同
様に、シリコン基板１と第１のガラス基板２とを陽極接
合する際に、静電引力によって、重り部６が第１の固定
電極９に引き寄せられたとしても、重り部６が第１の固
定電極９と接触するよりも先に、重り部６と同電位極２
３が接触するので、重り部６の移動が止められ、重り部
６と第１の固定電極９とが接触することがなくなる。な
お、その他の構成並びに作用効果は、上記した各実施の
形態と同様であるので、各部の詳細な説明を省略する。With this configuration, similarly to the second embodiment, when the silicon substrate 1 and the first glass substrate 2 are anodically bonded, the weight portion 6 is moved to the first fixed electrode by electrostatic attraction. 9, the weight portion 6 and the same potential electrode 2 before the weight portion 6 comes into contact with the first fixed electrode 9.
3 makes contact, the movement of the weight 6 is stopped, and the weight 6 and the first fixed electrode 9 do not come into contact with each other. Note that the other configuration, operation, and effect are the same as those of the above-described embodiments, and thus detailed description of each unit will be omitted.

【００３３】図４は本発明に係る第４の実施の形態を示
している。同図に示すように、本形態では、第１のガラ
ス基板２の下面に形成する第１の固定電極９と同電位極
１３の厚さは同じにし、両者を同時に形成するようにし
ている。そして、上記した第２，第３の実施の形態と同
様に、同電位極１３と重り部６との距離を短くするため
に、同電位極１３に対向する重り部６の下面に、突部３
１を形成している。これにより、陽極接合時には、突部
３１と同電位極１３とが先に接触するため、第１の固定
電極９と第１の可動電極７との接触が抑止される。さら
に、本例では、突部３１を低導電性の材質を用いて形成
している。そして、この突部３１は、例えば、酸化膜の
ような低導電性の物質をデポジションすることにより、
簡単に形成できる。FIG. 4 shows a fourth embodiment according to the present invention. As shown in the figure, in the present embodiment, the thickness of the first fixed electrode 9 formed on the lower surface of the first glass substrate 2 and the thickness of the same potential electrode 13 are the same, and both are formed simultaneously. As in the second and third embodiments described above, in order to shorten the distance between the same-potential pole 13 and the weight 6, a protrusion is formed on the lower surface of the weight 6 facing the same-potential pole 13. 3
1 are formed. Thereby, at the time of anodic bonding, the projection 31 and the same potential electrode 13 come into contact first, so that the contact between the first fixed electrode 9 and the first movable electrode 7 is suppressed. Further, in the present example, the protrusion 31 is formed using a low conductive material. The projection 31 is formed by depositing a low conductive material such as an oxide film, for example.
Easy to form.

【００３４】このように、突部３１の材質を酸化膜など
の低導電性の材質を用いて形成することにより、重り部
６が同電位極１３の方向に静電引力によって引き寄せら
れて突部３１と同電位極１３とが接触しても、低導電性
のために電流が流れにくくなり、より確実に溶着を防止
できる。As described above, by forming the material of the protrusion 31 using a low conductive material such as an oxide film, the weight 6 is attracted toward the same potential pole 13 by electrostatic attraction, and Even if the electrode 31 and the same potential electrode 13 are in contact with each other, it becomes difficult for current to flow due to low conductivity, and welding can be prevented more reliably.

【００３５】図５は本発明の第５の実施の形態を示して
いる。本形態では、同図に示すように、第１の実施の形
態等と同様に、第１のガラス基板２の下面に、同一厚さ
の第１の固定電極９と同電位極１３を形成している。そ
して、係る同電位極１３の表面に耐熱性の良好な材質を
用いて、突起４１を形成している。この突起４１は、例
えばタングステンのような融点が少なくともアーク放電
によって発生する熱よりも高い温度（もちろん固定電極
の融点よりも高い）となる高融点材質が用いられてい
る。そして、この突起４１は、第１の固定電極９と同じ
厚さの同電位極１３の表面に形成されているので、突起
４１の先端と重り部６の距離は、第１の固定電極９と重
り部６の距離よりも短くなる。FIG. 5 shows a fifth embodiment of the present invention. In the present embodiment, as shown in the figure, similarly to the first embodiment and the like, the first fixed electrode 9 and the same potential pole 13 having the same thickness are formed on the lower surface of the first glass substrate 2. ing. The projections 41 are formed on the surface of the same potential electrode 13 using a material having good heat resistance. The projections 41 are made of a high melting point material such as tungsten, whose melting point is higher than at least the heat generated by the arc discharge (of course, higher than the melting point of the fixed electrode). Since the protrusion 41 is formed on the surface of the same potential electrode 13 having the same thickness as the first fixed electrode 9, the distance between the tip of the protrusion 41 and the weight portion 6 is different from that of the first fixed electrode 9. It becomes shorter than the distance of the weight portion 6.

【００３６】本形態ではセンサの構成を上記した構成に
することによって、シリコン基板１と第１のガラス基板
２とを陽極接合する際に、静電引力によって、重り部６
が第１の固定電極９に引き寄せられたとしても、重り部
６が第１の固定電極９と接触するよりも先に、重り部６
は同電位極１３の表面に形成された突起４１と接触する
ので、重り部６の移動が止められ、重り部６と第１の固
定電極９とが接触しない。In this embodiment, when the sensor is configured as described above, when the silicon substrate 1 and the first glass substrate 2 are anodically bonded, the weight portion 6 is formed by electrostatic attraction.
Is attracted to the first fixed electrode 9 even before the weight 6 contacts the first fixed electrode 9.
Is in contact with the projection 41 formed on the surface of the same potential pole 13, the movement of the weight 6 is stopped, and the weight 6 does not contact the first fixed electrode 9.

【００３７】ところで、同電位極１３はシリコン基板１
と電気的に接続されているので、同電位極１３と重り部
６の上面（第１の可動電極７）とは同電位となっている
が、第１の可動電極７から同電位極１３までには所定の
距離が存在するので、係る距離間の抵抗（材質の抵抗）
のために、わずかながら両者に電位差が生じる。このた
め、陽極接合の時に、重り部６が同電位極１３に近付く
と、アーク放電が生じる可能性がわずかにある。しか
し、仮に重り部６と第１の固定電極９の間でアーク放電
が生じ、高温が発生したとしても、重り部６と第１のガ
ラス基板２（第１の固定電極９）とは接触せず、また、
重り部６と接触する突起４１は耐熱性の材質を用いてい
るので、やはりその接触部分で溶融することがない。よ
って、重り部６と第１のガラス基板２の所定部位とが溶
着することがなく、より確実に不良品の発生を防止でき
る。The same potential pole 13 is connected to the silicon substrate 1
And the upper surface of the weight portion 6 (the first movable electrode 7) is at the same potential, but from the first movable electrode 7 to the same potential electrode 13. Has a predetermined distance, so the resistance between the distances (resistance of the material)
Therefore, a slight potential difference occurs between the two. For this reason, when the weight part 6 approaches the same potential pole 13 at the time of anodic bonding, there is a small possibility that arc discharge will occur. However, even if an arc discharge occurs between the weight portion 6 and the first fixed electrode 9 and a high temperature is generated, the weight portion 6 and the first glass substrate 2 (the first fixed electrode 9) do not come into contact with each other. And also
Since the protrusion 41 that contacts the weight portion 6 is made of a heat-resistant material, it does not melt at the contact portion. Therefore, the weight portion 6 and the predetermined portion of the first glass substrate 2 are not welded, and the occurrence of defective products can be more reliably prevented.

【００３８】図６は本発明に係る第６の実施の形態を示
している。すなわち、上記した実施の形態（第１〜５の
実施の形態）では、いずれも静電容量型加速度センサに
ついて説明しているが、本実施の形態では静電容量型圧
力センサに適用した例を示している。FIG. 6 shows a sixth embodiment according to the present invention. That is, in the above-described embodiments (first to fifth embodiments), a capacitance-type acceleration sensor is described, but in this embodiment, an example in which the invention is applied to a capacitance-type pressure sensor is described. Is shown.

【００３９】同図に示すように、偏平な矩形状のシリコ
ン基板５１の上面にガラス基板５２が配置され、陽極接
合により、両者が一体化されている。As shown in the figure, a glass substrate 52 is disposed on the upper surface of a flat rectangular silicon substrate 51, and both are integrated by anodic bonding.

【００４０】シリコン基板５１は上下方向から所定量だ
けエッチングを施されており、可動部となる薄肉のダイ
アフラム５３が形成されている。よって、ダイアフラム
５３とガラス基板５２との間に空間（圧力室５４）が形
成される。そして、ガラス基板５２に対向するダイアフ
ラム５３の上面が可動電極５５となる。また、シリコン
基板５１には、ガラス基板５２の未配置領域に、ボンデ
ィングパッド５６が形成されており、このボンディング
パッド５６がシリコン基板５１を介して可動電極５５と
導通状態となる。The silicon substrate 51 is etched by a predetermined amount from above and below, and a thin diaphragm 53 serving as a movable portion is formed. Therefore, a space (pressure chamber 54) is formed between the diaphragm 53 and the glass substrate 52. The upper surface of the diaphragm 53 facing the glass substrate 52 becomes the movable electrode 55. In the silicon substrate 51, a bonding pad 56 is formed in a non-arranged area of the glass substrate 52, and the bonding pad 56 becomes conductive with the movable electrode 55 via the silicon substrate 51.

【００４１】一方、ガラス基板５２は、中央部分に上下
方向を貫通するように形成された孔部５７が形成されて
おり、測定対象圧力を圧力室内に導入可能としている。
そして、さらにダイアフラム５３（可動電極５５）と対
向するガラス基板５２の下面には、固定電極５８が形成
されている。係る固定電極５８は孔部５７の周囲に略Ｃ
字形状にパターンニングされている。さらに、ガラス基
板５２には、固定電極５８と電気的に接続される引出線
５８ａが形成されており、その引出線５８ａの先端側
が、シリコン基板５１の表面に形成された引出線５８ｂ
と導通されている。そして、引出線５８ｂの先端が、ボ
ンディングパッド６０に接続されている。これにより、
固定電極がボンディングパッド６０と導通状態となる。
なお、引出線５８ａ，５８ｂがシリコン基板５１に接触
しないように、引出線５８ａ，５８ｂの形成範囲及びそ
の周囲の範囲で、シリコン基板５１の表面は所定量エッ
チングされているとともに、エッチングされた領域に酸
化膜５９が形成され、酸化膜５９の表面に引出線５８ｂ
は形成されている。係る構成にすることにより、両ボン
ディングパッド５６，６０間に、可動電極５５と固定電
極５８間に発生する静電容量に応じた信号が出力され
る。On the other hand, the glass substrate 52 has a hole 57 formed at the center thereof so as to penetrate in the vertical direction, so that the pressure to be measured can be introduced into the pressure chamber.
Further, on the lower surface of the glass substrate 52 facing the diaphragm 53 (movable electrode 55), a fixed electrode 58 is formed. The fixed electrode 58 is substantially C around the hole 57.
It is patterned in the shape of a letter. Further, a lead line 58a electrically connected to the fixed electrode 58 is formed on the glass substrate 52, and the leading end side of the lead line 58a is connected to the lead line 58b formed on the surface of the silicon substrate 51.
Is conducted. The leading end of the lead wire 58 b is connected to the bonding pad 60. This allows
The fixed electrode becomes conductive with the bonding pad 60.
Note that the surface of the silicon substrate 51 is etched by a predetermined amount in the formation range of the lead lines 58a and 58b and the surrounding area so that the lead lines 58a and 58b do not contact the silicon substrate 51. An oxide film 59 is formed on the surface of the oxide film 59.
Is formed. With this configuration, a signal corresponding to the capacitance generated between the movable electrode 55 and the fixed electrode 58 is output between the bonding pads 56 and 60.

【００４２】本形態に係る静電容量型圧力センサでは、
圧力を測定したいガスを、孔部５７を介して圧力室５４
に供給する。するとガス圧によってダイアフラム５３が
繞むので、ダイアフラム５３の上面（可動電極５５）と
固定電極５８との距離が変化する。それにともない、両
電極５５，５８間の静電容量が変化するので、可動電極
５５の電気信号と、固定電極５８の電気信号によって、
係る静電容量の変化を検知して、ガス圧を測定するよう
になっている。In the capacitance type pressure sensor according to the present embodiment,
The gas whose pressure is to be measured is supplied to the pressure chamber 54 through the hole 57.
To supply. Then, since the diaphragm 53 is surrounded by the gas pressure, the distance between the upper surface (the movable electrode 55) of the diaphragm 53 and the fixed electrode 58 changes. Accordingly, the capacitance between the two electrodes 55 and 58 changes, so that the electric signal of the movable electrode 55 and the electric signal of the fixed electrode 58
The change in the capacitance is detected to measure the gas pressure.

【００４３】ここで本発明では、固定電極５８と孔部５
７の間にリング状の同電位極６１をパターニングして形
成している。この同電位極６１は、内周が孔部５７の周
囲に沿って形成されており、外周が固定電極５８と接触
しないように、固定電極５８から少し離れるように形成
されている。そして、同電位極６１は厚みが固定電極５
８の厚みよりも厚くなるように形成される。Here, in the present invention, the fixed electrode 58 and the hole 5
7, a ring-shaped same potential electrode 61 is formed by patterning. The same potential pole 61 has an inner periphery formed along the periphery of the hole 57, and is formed slightly away from the fixed electrode 58 so that the outer periphery does not contact the fixed electrode 58. The same potential electrode 61 has a fixed electrode 5 thickness.
8 is formed so as to be thicker than the thickness.

【００４４】さらに、ガラス基板５２の表面には、同電
位極６１に接続される引出線６１ａが形成されている。
そして係る引出線６１ａは、固定電極５８に接触しない
ように、固定電極５８の切れ目を通して、パターン形成
されている。さらに引出線６１ａは、その先端が固定電
極５８の外周外側にまで伸びるように形成されている。Further, on the surface of the glass substrate 52, a lead 61a connected to the same potential pole 61 is formed.
The lead wire 61 a is formed in a pattern through a cut in the fixed electrode 58 so as not to contact the fixed electrode 58. Further, the lead wire 61 a is formed so that its tip extends to the outer periphery of the fixed electrode 58.

【００４５】さらに引出線６１ａの先端６１ｂの下面
（露出表面）或いはそれに対向するシリコン基板５１の
表面にメタルなどをスパッタすることによって、接触突
起６１ｃを形成し、接触突起６１ｃと引出線６１ａの先
端６１ｂの厚さの合計は、圧力室５４のギャップと同じ
か若干厚くしている。これにより、シリコン基板５１と
ガラス基板５２を陽極接合することによって、先端６１
ｂは、接触突起６１ｃを介してシリコン基板５１と導通
するので、同電位極６１は、引出線６１ａ，接触突起６
１ｃを介してシリコン基板５１と電気的に接続されて同
電位となる。Further, a contact projection 61c is formed by sputtering metal or the like on the lower surface (exposed surface) of the tip 61b of the lead 61a or the surface of the silicon substrate 51 facing the tip, thereby forming the contact protrusion 61c and the tip of the lead 61a. The total thickness of 61 b is equal to or slightly greater than the gap of the pressure chamber 54. Thereby, the silicon substrate 51 and the glass substrate 52 are anodically bonded to each other to form the tip 61.
b is electrically connected to the silicon substrate 51 via the contact protrusion 61c, so that the same potential pole 61 is connected to the lead 61a and the contact protrusion 6c.
It is electrically connected to the silicon substrate 51 via 1c and has the same potential.

【００４６】上記した構造の静電容量型圧力センサを製
造する際には、シリコン基板５１とガラス基板５２が陽
極接合されることによって一体化されるが、このとき発
生する静電引力により、ダイアフラム５３がガラス基板
５２（固定電極５８）側に引き寄せられ、そのダイアフ
ラム５３の中央が上に凸の状態で繞む。従って、ダイア
フラム５３の中央部が最初にガラス基板側に接触する
が、本形態では、その中央部分に対向する位置に同電位
極６１を設けたため、確実にダイアフラム５３と同電位
極６１が最初に接触する。よって、上記した各実施の形
態と同様の動作原理に従い、溶着等は生じない。In manufacturing the capacitance type pressure sensor having the above-described structure, the silicon substrate 51 and the glass substrate 52 are integrated by anodic bonding. 53 is drawn to the glass substrate 52 (fixed electrode 58) side, and the center of the diaphragm 53 is surrounded by being convex upward. Therefore, the center of the diaphragm 53 first contacts the glass substrate side. However, in this embodiment, since the same potential pole 61 is provided at a position facing the center, the diaphragm 53 and the same potential pole 61 are surely first. Contact. Therefore, welding or the like does not occur according to the same operation principle as in the above-described embodiments.

【００４７】さらに本形態では、同電位極６１は、固定
電極５８よりも厚みが厚くなるように形成されているの
で、ダイアフラム５３は同電位極６１によって繞みが止
められ、ダイアフラム５３は固定電極５８に接触しない
という効果も奏する。Further, in this embodiment, since the same potential electrode 61 is formed so as to be thicker than the fixed electrode 58, the diaphragm 53 is stopped by the same potential electrode 61, and the diaphragm 53 is fixed to the fixed electrode 58. There is also an effect of not touching the contact 58.

【００４８】なお、圧力センサに対する実施の形態は、
上記した１つを例示したが、本発明はこれに限ることな
く、上記した第１〜第５の各実施の形態のものを適用で
きるのはもちろんである。The embodiment for the pressure sensor is as follows.
Although the above-described one is illustrated, the present invention is not limited to this, and it goes without saying that the above-described first to fifth embodiments can be applied.

【００４９】また、加速度センサの例では、第１のガラ
ス基板２側に同電位極を形成したが、本発明では、それ
に限ることはなく、第２のガラス基板３側あるは両ガラ
ス基板に同電位極を形成してもよい。Further, in the example of the acceleration sensor, the same potential pole is formed on the first glass substrate 2 side. However, the present invention is not limited to this, and is applied to the second glass substrate 3 side or both glass substrates. The same potential pole may be formed.

【００５０】[0050]

【発明の効果】以上のように、本発明に係る静電容量型
物理量センサでは、絶縁基板表面の可動電極に対向する
所定位置に、その可動電極と同電位の同電位極を形成し
たため、陽極接合にともない可動電極が固定電極に引き
寄せられたとしても、可動電極と同電位極とが接触する
ため、電流が流れず、溶着しない。As described above, in the capacitance type physical quantity sensor according to the present invention, the same potential pole having the same potential as the movable electrode is formed at a predetermined position on the surface of the insulating substrate facing the movable electrode. Even if the movable electrode is drawn to the fixed electrode due to the joining, no current flows and no welding occurs because the movable electrode and the same potential electrode are in contact with each other.

【００５１】また、可動部と同電位極との距離を短くし
た場合（請求項２〜５）には、半導体基板と絶縁基板を
陽極接合によって一体化する際に生じる静電引力によっ
て可動部が固定電極方向に移動しても、確実に同電位極
と可動部が最初に接触し、上記した効果を発揮する。し
かも、それ以上の接近移動が停止されるので、可動電極
と固定電極とが接触することがなく、両電極が溶着する
おそれもなくなる。さらに請求項６のように構成する
と、同電位極の耐熱性が向上するので、溶着がより確実
に防止される。When the distance between the movable portion and the same potential pole is reduced (claims 2 to 5), the movable portion is formed by electrostatic attraction generated when the semiconductor substrate and the insulating substrate are integrated by anodic bonding. Even when moving in the direction of the fixed electrode, the same potential pole and the movable portion surely come into contact first, and the above-described effect is exhibited. In addition, since the further approaching movement is stopped, the movable electrode and the fixed electrode do not come into contact with each other, and there is no danger of welding both electrodes. Further, according to the sixth aspect, since the heat resistance of the same potential electrode is improved, welding is more reliably prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図１】（Ａ）は本発明に係る第１の実施の形態を示す
図である。（Ｂ）はシリコン基板の形状に対する固定電
極及び同電位極の形成パターンを示す図である。FIG. 1A is a diagram showing a first embodiment according to the present invention. (B) is a diagram showing a pattern of forming a fixed electrode and the same potential pole with respect to the shape of a silicon substrate.

【図２】（Ａ）は本発明に係る第２の実施の形態を示す
図である。（Ｂ）はシリコン基板に形成された凹部の形
状を示す図である。FIG. 2A is a diagram showing a second embodiment according to the present invention. (B) is a diagram showing a shape of a concave portion formed in the silicon substrate.

【図３】本発明に係る第３の実施の形態を示す図であ
る。FIG. 3 is a diagram showing a third embodiment according to the present invention.

【図４】本発明に係る第４の実施の形態を示す図であ
る。FIG. 4 is a diagram showing a fourth embodiment according to the present invention.

【図５】本発明に係る第５の実施の形態を示す図であ
る。FIG. 5 is a diagram showing a fifth embodiment according to the present invention.

【図６】（Ａ）は本発明に係る第６の実施の形態を示す
図である。（Ｂ）はそのＢ−Ｂ断面図である。FIG. 6A is a diagram showing a sixth embodiment according to the present invention. (B) is a BB sectional view thereof.

【図７】従来の静電容量型物理量センサを示す図であ
る。FIG. 7 is a diagram showing a conventional capacitance-type physical quantity sensor.

【符号の説明】[Explanation of symbols]

１ シリコン基板 ２ 第１のガラス基板 ３ 第２のガラス基板 ６ 重り部 ７ 第１の可動電極 ８ 第２の可動電極 ９ 第１の固定電極 １０ 第２の固定電極 １３ 同電位極 １４ 凹部 ２３ 同電位極 ３１ 凸部 ４１ 突起 ５１ シリコン基板 ５２ ガラス基板 ５３ ダイアフラム ５５ 可動電極 ５８ 固定電極 ６１ 同電位極 DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 1st glass substrate 3 2nd glass substrate 6 Weight part 7 1st movable electrode 8 2nd movable electrode 9 1st fixed electrode 10 2nd fixed electrode 13 Same potential pole 14 Depression 23 Same Potential electrode 31 Convex part 41 Projection 51 Silicon substrate 52 Glass substrate 53 Diaphragm 55 Movable electrode 58 Fixed electrode 61 Same potential electrode

Claims (6)

【特許請求の範囲】[Claims] 【請求項１】 表面に可動電極を備えた、物理量によっ
て変位する可動部を有する半導体基板と、 前記可動電極に対向する位置に固定電極が設けられた絶
縁基板とを備えた静電容量型物理量センサであって、 前記可動部に対向する前記絶縁基板の表面所定位置に、
前記可動電極と同電位となる同電位極を形成し、半導体
基板と絶縁基板とを陽極接合する際に、前記可動電極と
同電位極とが接触可能としたことを特徴とする静電容量
型物理量センサ。1. A capacitance-type physical quantity comprising: a semiconductor substrate having a movable part on its surface and having a movable part displaced by a physical quantity; and an insulating substrate having a fixed electrode provided at a position facing the movable electrode. A sensor, at a predetermined position on a surface of the insulating substrate facing the movable portion,
Forming a same potential pole having the same potential as the movable electrode, and when the semiconductor substrate and the insulating substrate are anodic-bonded, the movable electrode and the same potential pole can be brought into contact with each other; Physical quantity sensor. 【請求項２】 前記同電位極と、それに対向する前記可
動部との距離が、前記固定電極とそれに対向する可動電
極の表面との距離よりも短くするようにしたことを特徴
とする請求項１に記載の静電容量型物理量センサ。2. The apparatus according to claim 1, wherein a distance between the same potential electrode and the movable portion facing the same potential electrode is shorter than a distance between the fixed electrode and a surface of the movable electrode facing the fixed electrode. 2. The capacitance-type physical quantity sensor according to 1. 【請求項３】 前記固定電極に対向する前記可動部の表
面に凹部を設けることにより、請求項２の要件を具備す
るようにしたことを特徴とする請求項２に記載の静電容
量型物理量センサ。3. The capacitance-type physical quantity according to claim 2, wherein a concave portion is provided on the surface of the movable portion facing the fixed electrode, thereby satisfying the requirements of claim 2. Sensor. 【請求項４】 前記固定電極の厚さよりも、前記同電位
極の厚さを厚くしたことを特徴とする請求項２に記載の
静電容量型物理量センサ。4. The capacitance type physical quantity sensor according to claim 2, wherein the thickness of the same potential electrode is larger than the thickness of the fixed electrode. 【請求項５】 前記同電位極に対向する前記可動電極部
の表面に、突起を設けることにより、請求項２の要件を
具備するようにしたことを特徴とする請求項２に記載の
静電容量型物理量センサ。5. The electrostatic device according to claim 2, wherein a projection is provided on the surface of the movable electrode portion facing the same potential pole, thereby satisfying the requirements of claim 2. Capacitive physical quantity sensor. 【請求項６】 前記同電位極の少なくとも表面が前記固
定電極より高融点材料で形成されたことを特徴とする請
求項２に記載の静電容量型物理量センサ。6. The capacitance-type physical quantity sensor according to claim 2, wherein at least the surface of the same potential pole is formed of a material having a higher melting point than the fixed electrode.
JP8263732A 1996-09-13 1996-09-13 Electrostatic capacitance type physical quality sensor Pending JPH1090300A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8263732A JPH1090300A (en) 1996-09-13 1996-09-13 Electrostatic capacitance type physical quality sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8263732A JPH1090300A (en) 1996-09-13 1996-09-13 Electrostatic capacitance type physical quality sensor

Publications (1)

Publication Number Publication Date
JPH1090300A true JPH1090300A (en) 1998-04-10

Family

ID=17393533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8263732A Pending JPH1090300A (en) 1996-09-13 1996-09-13 Electrostatic capacitance type physical quality sensor

Country Status (1)

Country Link
JP (1) JPH1090300A (en)

Cited By (6)

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JP2006194771A (en) * 2005-01-14 2006-07-27 Matsushita Electric Works Ltd Electric capacitance type semi-conductor physical quantity sensor and its manufacturing method
JP2008529001A (en) * 2005-01-28 2008-07-31 フリースケール セミコンダクター インコーポレイテッド Z-axis accelerometer with at least two gap dimensions and a stroke stopper located outside the active capacitor space
JP2009014598A (en) * 2007-07-06 2009-01-22 Mitsubishi Electric Corp Capacitance type acceleration sensor
JP2010008134A (en) * 2008-06-25 2010-01-14 Panasonic Electric Works Co Ltd Semiconductor physical quantity sensor
JP2010008127A (en) * 2008-06-25 2010-01-14 Panasonic Electric Works Co Ltd Semiconductor physical quantity sensor
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006194771A (en) * 2005-01-14 2006-07-27 Matsushita Electric Works Ltd Electric capacitance type semi-conductor physical quantity sensor and its manufacturing method
US7799595B2 (en) 2005-01-14 2010-09-21 Panasonic Electric Works Co., Ltd. Semiconductor physical quantity sensor of electrostatic capacitance type and method for manufacturing the same
JP4572686B2 (en) * 2005-01-14 2010-11-04 パナソニック電工株式会社 Capacitive semiconductor physical quantity sensor and manufacturing method thereof
JP2008529001A (en) * 2005-01-28 2008-07-31 フリースケール セミコンダクター インコーポレイテッド Z-axis accelerometer with at least two gap dimensions and a stroke stopper located outside the active capacitor space
JP2009014598A (en) * 2007-07-06 2009-01-22 Mitsubishi Electric Corp Capacitance type acceleration sensor
JP2010008134A (en) * 2008-06-25 2010-01-14 Panasonic Electric Works Co Ltd Semiconductor physical quantity sensor
JP2010008127A (en) * 2008-06-25 2010-01-14 Panasonic Electric Works Co Ltd Semiconductor physical quantity sensor
CN104166013A (en) * 2013-05-16 2014-11-26 精工爱普生株式会社 Sensor element, electronic apparatus and moving object
JP2014224739A (en) * 2013-05-16 2014-12-04 セイコーエプソン株式会社 Sensor element, electronic apparatus and moving body

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