JPH1067534A - Low-melting glass for coating film formation - Google Patents
Low-melting glass for coating film formationInfo
- Publication number
- JPH1067534A JPH1067534A JP8220885A JP22088596A JPH1067534A JP H1067534 A JPH1067534 A JP H1067534A JP 8220885 A JP8220885 A JP 8220885A JP 22088596 A JP22088596 A JP 22088596A JP H1067534 A JPH1067534 A JP H1067534A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- low
- substrate
- melting glass
- melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
- C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
- C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
- C03C3/0745—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc containing more than 50% lead oxide, by weight
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- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
- Gas-Filled Discharge Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、軟化温度が低いい
わゆる低融点ガラスであって、焼成時の泡抜けが容易
で、透明・透視性に富み、従って表示パネル基板の導電
性配線 (電極線と称する) パターンを厚膜状に絶縁被覆
するうえで好適な被膜形成用の低融点ガラスにかかり、
特に反射型プラズマディスプレイパネル (反射型ＰＤＰ
と略称する)の透明な前面基板にパターン形成した透明
電極線パターンを透明・透視性に富む被膜で絶縁被覆
し、ＰＤＰの輝度の低下を来すことのない被膜形成用低
融点ガラスに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a so-called low-melting glass having a low softening temperature, which is easy to remove bubbles at the time of firing, and is excellent in transparency and transparency. It is called a low-melting glass for film formation suitable for insulating coating the pattern in a thick film form,
Especially reflective plasma display panel (reflective PDP
The present invention relates to a low-melting glass for forming a film, which does not lower the brightness of PDP by insulating a transparent electrode line pattern formed on a transparent front substrate (hereinafter abbreviated as ")" with a film having high transparency and transparency.
【０００２】[0002]
【従来技術とその解決すべき課題】特開昭49−110709号
には、SiO2 １〜20wt％、B2O3 ５〜25wt％、Al2O3 １
〜８wt％、ZnO ３〜15wt％、PbO 60〜80wt％からなり、
気体放電を利用した表示パネルにおける電極線を被覆す
る絶縁ガラスであって、低い電圧で有効に発光できる表
示パネル用絶縁ガラスが開示されている。The BACKGROUND OF problem to be its solution] JP 49-110709, SiO 2 1~20wt%, B 2 O 3 5~25wt%, Al 2 O 3 1
~ 8wt%, ZnO 3 ~ 15wt%, PbO 60 ~ 80wt%,
There is disclosed an insulating glass for a display panel, which is an insulating glass for covering an electrode wire in a display panel using a gas discharge and which can effectively emit light at a low voltage.
【０００３】特開平８−119665号には、SiO2 12〜17wt
％、B2O3 ８〜15wt％、Al2O3 0.1〜５wt％、ZnO ５〜1
2wt％、PbO 60〜70wt％からなり、室温〜 300℃におけ
る熱膨張係数が63〜76×10-7／℃であって、ＰＤＰ基
板、特に背面基板に厚膜を形成するうえで好適で、基板
に塗布し焼成して厚膜を形成した際に基板に反りや割れ
を発生し難いＰＤＰ用のガラス組成物が開示されてい
る。これら先行技術は透明・透視性を重視したものでは
なく、また言及していない。Japanese Patent Application Laid-Open No. 8-119665 discloses that SiO 2
%, B 2 O 3 8~15wt% , Al 2 O 3 0.1~5wt%, ZnO 5~1
It consists of 2 wt% and PbO 60-70 wt%, and has a thermal expansion coefficient of 63-76 × 10 -7 / ° C from room temperature to 300 ° C, and is suitable for forming a thick film on a PDP substrate, especially a rear substrate, A glass composition for a PDP that hardly causes warping or cracking of a substrate when a thick film is formed by applying the film to a substrate and firing it is disclosed. These prior arts do not emphasize transparency and transparency and do not mention them.
【０００４】本発明は、表示パネル基板、特に反射型Ｐ
ＤＰ基板等のソーダ石灰系ガラスあるいはそれに類似の
透明ガラスを基板とする表示パネルに透明電極線パター
ンを形成し、更にそれを絶縁被覆するうえで適用される
低融点ガラスであって、組成範囲および熱物性を規定し
たことにより透明性、透視性に優れる被膜形成用低融点
ガラスを提供するものである。[0004] The present invention relates to a display panel substrate, in particular, a reflective P substrate.
A low-melting glass applied to form a transparent electrode line pattern on a display panel using soda-lime glass or a similar transparent glass such as a DP substrate as a substrate, and to further insulate it, An object of the present invention is to provide a low-melting glass for forming a coating film which is excellent in transparency and transparency by defining thermophysical properties.
【０００５】[0005]
【課題を解決するための手段】本発明は、基板上に絶縁
性の被膜を形成するための低融点ガラスであって、その
成分組成がwt％表示でSiO2 ２〜７、B2O3 15〜25、Al
2O3 ０〜８、ZnO ３〜15、PbO 60〜75、CaO 、MgO 、 Sr
O またはBaO より選択される１種または２種以上を０〜
６の範囲で含み、かつ軟化点が 450〜 480℃、熱膨張係
数が77〜90×10 -7／℃である被膜形成用低融点ガラス、
さらに、反射型ＰＤＰ基板に配した透明電極線パターン
を透明な絶縁性の被膜で被覆するための低融点ガラスと
して適用される前記被膜形成用低融点ガラス、からな
る。SUMMARY OF THE INVENTION The present invention provides a method for insulating a substrate.
Low-melting glass for forming a conductive film,
Ingredient composition is wt% and SiOTwo 2-7, BTwoOThree 15-25, Al
TwoOThree 0-8, ZnO 3-15, PbO 60-75, CaO, MgO, Sr
One or more selected from O or BaO
6 and the softening point is 450-480 ° C,
Number is 77 ~ 90 × 10 -7/ Low melting point glass for film formation, which is / ° C.
Furthermore, a transparent electrode line pattern arranged on a reflective PDP substrate
Glass with a low melting point for coating
Said low-melting glass for film formation applied as
You.
【０００６】[0006]
【発明の実施の形態】一例として反射型ＰＤＰは、図１
の概略側断面図に示すような構造からなる。１は透明な
前面基板ガラスで、前記したようにソーダ石灰系ガラス
あるいはそれに類似のガラスからなる。２はパターニン
グされた透明電極であり、例えばインジウム−錫(ITO)
を主要素とする透明電極である。３は本発明にかかる低
融点ガラスよりなる透明な絶縁被膜（当業界では通常誘
電体層と称しており、以下誘電体層とよぶ）で、予め製
造、整粒した低融点ガラス粉とペーストオイルからなる
混合物をスクリーン印刷等により前面基板１および透明
電極２上に塗布し、570 〜600 ℃程度で焼成して厚み30
μm 程度の厚膜を形成する。４は例えばスパッタリング
法等により積層したマグネシア層で、誘電体層３を放電
によるスパッタリングから保護するものであり、このよ
うに保護マグネシア層を被覆することは周知の技術事項
である。DESCRIPTION OF THE PREFERRED EMBODIMENTS As an example, a reflection type PDP is shown in FIG.
Has a structure as shown in the schematic side sectional view of FIG. Reference numeral 1 denotes a transparent front substrate glass, which is made of soda-lime glass or glass similar thereto as described above. 2 is a patterned transparent electrode, for example, indium-tin (ITO)
Is a transparent electrode whose main element is. Reference numeral 3 denotes a transparent insulating film made of the low-melting glass according to the present invention (generally referred to in the art as a dielectric layer, hereinafter referred to as a dielectric layer). Is coated on the front substrate 1 and the transparent electrode 2 by screen printing or the like, and baked at about 570 to 600 ° C.
A thick film of about μm is formed. Numeral 4 denotes a magnesia layer laminated by, for example, a sputtering method and the like, which protects the dielectric layer 3 from sputtering by electric discharge. Covering the protective magnesia layer in this manner is a well-known technical matter.
【０００７】５は背面基板ガラスで、前記透明電極に対
向するアドレス電極６、および所望色調に発光する蛍光
体７が配され、また各画素を区画する誘電性セラミック
質の隔壁８が形成される。これら前面基板ガラス１と背
面基板ガラス５は、それら周辺部をシール用低融点ガラ
ス９により封着せしめる。該低融点ガラス９はシールが
主目的で透明性、透視性等は問題とするものではなく、
PbO-SiO2系低融点ガラス粉とペーストオイルからなる混
合物を略450 ℃で焼成することにより完全にシールする
ことができる。前面基板ガラス１と背面基板ガラス５の
間の空間 (放電空間) には希ガス10が封入される。Reference numeral 5 denotes a rear substrate glass on which an address electrode 6 facing the transparent electrode, a phosphor 7 emitting light of a desired color are arranged, and a dielectric ceramic partition 8 for partitioning each pixel is formed. . The peripheral portions of the front substrate glass 1 and the rear substrate glass 5 are sealed with a low-melting glass 9 for sealing. The low-melting glass 9 is mainly used for sealing, and transparency, transparency and the like do not matter.
The mixture consisting of the PbO-SiO 2 -based low melting point glass powder and the paste oil can be completely sealed by firing at approximately 450 ° C. A rare gas 10 is filled in a space (discharge space) between the front substrate glass 1 and the rear substrate glass 5.
【０００８】しかして、電圧印加により透明電極２とア
ドレス電極６の間に電位差を生じさせ、それにより希ガ
ス10を励起して紫外線を放射せしめ、それが蛍光体７を
刺激して発光、色表示せしめ、これを前面基板側より透
視するものである。Thus, a potential difference is generated between the transparent electrode 2 and the address electrode 6 by applying a voltage, thereby exciting the rare gas 10 to emit ultraviolet rays, which stimulates the phosphor 7 to emit light and color. This is displayed, and this is seen through from the front substrate side.
【０００９】前面基板ガラス１におけるソーダ石灰系ガ
ラス等の透明ガラスは熱膨張係数 (常温〜300 ℃) がお
およそ80〜90×10-7／℃であり、従って被膜形成用低融
点ガラスからなる透明な誘電体層３もそれに近似した熱
膨張係数を採るようにする。具体的には77〜90×10-7／
℃とするもので、その範囲未満あるいはその範囲を越え
ると、基板ガラスに反りや亀裂を与えたり、誘電体層自
体亀裂が生じたりする。また、被膜形成用低融点ガラス
の軟化点 (粘度が107.6 ポイズとなる温度) は450 〜48
0 ℃とするもので、そうすることにより、前記570 〜60
0 ℃での焼成に際して、充分な流動性を有し、泡抜けも
容易となる。なお、軟化点が 480℃を越えると、前記焼
成温度範囲では泡抜けが不充分となり易く、他方泡抜け
を充分とすべく焼成温度を上げると基板ガラスの耐熱温
度を越え、基板ガラスが変形する等の不具合が生ずる。
また軟化点が450 ℃未満であると、前記シール用低融点
ガラス９により封着すべく450 ℃程度で焼成する際に、
被膜形成用低融点ガラスの流動性が増大し、その上に成
膜したマグネシア層に亀裂が生ずる等の不具合が生ず
る。The transparent glass such as soda-lime glass in the front substrate glass 1 has a coefficient of thermal expansion (normal temperature to 300 ° C.) of about 80 to 90 × 10 −7 / ° C., and is therefore transparent made of a low-melting glass for forming a film. The dielectric layer 3 also has a thermal expansion coefficient close to it. Specifically, 77 ~ 90 × 10 -7 /
When the temperature is set to ° C., if the temperature is less than the range or exceeds the range, the substrate glass may be warped or cracked, or the dielectric layer itself may crack. Further, the softening point of the low melting point glass film formed (temperature at which the viscosity becomes 10 7.6 poise) of 450 to 48
0 ° C., so that 570 to 60
When sintering at 0 ° C., it has sufficient fluidity and facilitates bubble removal. If the softening point exceeds 480 ° C., bubbles are likely to be insufficient in the above-mentioned firing temperature range. And the like.
When the softening point is less than 450 ° C., when firing at about 450 ° C. for sealing with the low-melting glass for sealing 9,
The fluidity of the low-melting-point glass for forming a coating film is increased, and problems such as cracks are generated in the magnesia layer formed thereon.
【００１０】本発明においてB2O3はガラス形成の主要成
分として導入するもので、15〜25wt％の範囲とする。15
wt％未満ではガラス形成が不安定で失透、結晶を生じ易
くなる。他方25wt％を越えると焼成に際する泡抜けが困
難となる。好ましくは17〜22wt％の範囲とする。In the present invention, B 2 O 3 is introduced as a main component of glass formation, and is in a range of 15 to 25% by weight. Fifteen
If the content is less than wt%, glass formation is unstable, devitrification occurs, and crystals are easily formed. On the other hand, if it exceeds 25% by weight, it becomes difficult to remove bubbles during firing. Preferably, it is in the range of 17 to 22% by weight.
【００１１】SiO2はB2O3同様のガラス形成成分で、それ
によりガラス化範囲を拡大し安定化することができる。
導入量は２〜７wt％の範囲とするのが適当であり、２wt
％未満では前記作用が発揮できず、７wt％を越えるとガ
ラス粘度が上昇し泡抜けが困難となる。好ましくは３〜
５wt％の範囲とする。[0011] SiO 2 is a glass-forming component similar to B 2 O 3 , whereby it can extend and stabilize the vitrification range.
It is appropriate that the introduction amount is in the range of 2 to 7% by weight.
%, The effect cannot be exerted, and if it exceeds 7% by weight, the viscosity of the glass increases and it becomes difficult to remove bubbles. Preferably 3 to
The range is 5% by weight.
【００１２】PbO はガラスを低融点とし、すなわち軟化
温度を下げ、流動性を与えるうえで必須の成分であり、
60〜75wt％の範囲で導入する。60wt％未満ではその作用
が十分発揮できず、また焼成に際する泡抜けが不充分と
なる。75wt％を越えると軟化点が低下し過ぎるため、先
述 450℃でのシール用低融点ガラスにより封着する際に
ガラスが流動し易くなり、その上に成膜したマグネシア
層に亀裂が生ずるようになり、また熱膨張係数が過大と
なる。PbO is an essential component for lowering the melting point of glass, that is, lowering the softening temperature and imparting fluidity.
It is introduced in the range of 60 to 75 wt%. If the content is less than 60 wt%, the effect cannot be sufficiently exhibited, and the bubble removal during firing becomes insufficient. If the content exceeds 75 wt%, the softening point will be too low, so that the glass tends to flow when sealing with the aforementioned low-melting glass for sealing at 450 ° C., so that the magnesia layer formed thereon may be cracked. And the coefficient of thermal expansion becomes excessive.
【００１３】ZnO はガラスに流動性を与え、また熱膨張
係数を調整するうえで導入するもので、その範囲は３〜
15wt％とする。３wt％未満ではその作用を発揮し得ず、
15wt％を越えるとガラスが不安定となり、結晶化し易く
なる。[0013] ZnO is used for imparting fluidity to the glass and adjusting the coefficient of thermal expansion.
15 wt%. If less than 3 wt%, the effect cannot be exhibited,
If it exceeds 15 wt%, the glass becomes unstable and tends to crystallize.
【００１４】Al2O3 はガラスを安定化させ、熱膨張係数
を調整するうえで適宜導入する。但し８wt％を越える導
入はガラスの粘度を上昇させ、泡抜けが困難となる。Al 2 O 3 is introduced as appropriate for stabilizing the glass and adjusting the thermal expansion coefficient. However, introduction exceeding 8% by weight increases the viscosity of the glass, making it difficult to remove bubbles.
【００１５】なお熱膨張係数を調整する目的において、
本発明における溶融、泡抜け性、熱物性等を損なわない
範囲でCaO 、MgO 、SrO またはBaO より選択される１種
または２種以上を０〜６wt％の範囲で導入できる。For the purpose of adjusting the coefficient of thermal expansion,
One or more selected from CaO 2, MgO 2, SrO and BaO can be introduced in the range of 0 to 6% by weight as long as the melting, defoaming properties, thermophysical properties and the like in the present invention are not impaired.
【００１６】また、不純物としてのR2O (Na2O 、K2O
等）の存在は、それが希ガス中に混入するとパネル寿命
の短縮を来す恐れがあるため、その混入量を１wt％以下
とすることが望ましい。Further, R 2 O (Na 2 O, K 2 O
And the like may cause the panel life to be shortened if it is mixed in the rare gas. Therefore, it is desirable that the amount of the mixed gas be 1 wt% or less.
【００１７】[0017]
【実施例】以下具体的実施例を例示して本発明を説明す
る。The present invention will be described below by way of specific examples.
【００１８】〔ガラス混合ペーストの作製〕SiO2源とし
て微粉珪砂を、B2O3源としてほう酸を、Al2O3 源として
水酸化アルミニウムを、ZnO 源として亜鉛華を、PbO 源
として酸化鉛を、CaO 源として炭酸カルシウムを使用
し、これらを所望ガラス組成となるべく調合したうえ
で、白金ルツボに投入し、電気加熱炉内で1000〜1100
℃、１〜２時間で加熱溶融してガラスを得た。ガラスの
一部は型に流し込み、ブロック状にして熱物性 (熱膨張
係数、軟化点) 測定用に供した。残余のガラスは急冷双
ロール成形機にてフレーク状とし、粉砕装置で平均粒径
３〜４μm 、最大粒径15μm の粉末状に整粒した。[Preparation of glass mixed paste] Fine silica sand as a source of SiO 2 , boric acid as a source of B 2 O 3 , aluminum hydroxide as a source of Al 2 O 3 , zinc white as a source of ZnO, and lead oxide as a source of PbO Using calcium carbonate as a CaO source, mixing them to obtain a desired glass composition, and then putting them into a platinum crucible, and in an electric heating furnace, 1000 to 1100.
The mixture was heated and melted at a temperature of 1 to 2 hours to obtain a glass. A part of the glass was poured into a mold, made into a block, and used for measuring thermophysical properties (thermal expansion coefficient, softening point). The remaining glass was flaked by a quenching twin roll forming machine, and sized by a pulverizer into a powder having an average particle size of 3 to 4 μm and a maximum particle size of 15 μm.
【００１９】αテルピネオールとブチルカルビトールア
セテートからなるペーストオイルにバインダーとしての
エチルセルロースと上記ガラス粉を混合し、粘度 300±
50ポイズ程度のスクリーン印刷に適するペーストを調製
した。Ethyl cellulose as a binder and the above-mentioned glass powder were mixed with a paste oil composed of α-terpineol and butyl carbitol acetate, and the viscosity was 300 ±
A paste suitable for screen printing of about 50 poise was prepared.
【００２０】〔誘電体層の形成〕厚み２〜３mm、サイズ
150mm□のソーダ石灰系基板ガラスに、焼成後の膜厚が
25〜30μm となるべく勘案して目の開き#250のスクリー
ンを用いて前記ペーストをスクリーン印刷により塗布し
た。[Formation of dielectric layer] Thickness 2-3 mm, size
Film thickness after firing on 150mm □ soda-lime base glass
The paste was applied by screen printing using a # 250 aperture screen, taking into account the thickness to be 25 to 30 μm.
【００２１】次いで140 ℃で15分間乾燥した後、580 ℃
で30分間焼成して、被膜形成用低融点ガラスよりなるク
リアーな厚膜を形成した。得られた試料について以下の
試験に供した。Then, after drying at 140 ° C. for 15 minutes,
For 30 minutes to form a clear thick film made of a low-melting glass for film formation. The obtained sample was subjected to the following tests.
【００２２】〔熱膨張係数の測定〕前記熱物性測定用ガ
ラスブロックを所定寸法に切断、研磨して熱膨張係数測
定試料を作製し、これを熱膨張計にセットして５℃／分
の速度で昇温して伸び量を測定、記録し、室温〜300 ℃
の平均熱膨張係数を算出した。[Measurement of Coefficient of Thermal Expansion] The glass block for measuring thermophysical properties was cut and polished to a predetermined size to prepare a sample for measuring the coefficient of thermal expansion, which was set in a thermodilatometer and set at a rate of 5 ° C./min. Measure the elongation by elevating the temperature at
Was calculated.
【００２３】〔軟化点の測定〕常法により、ガラスブロ
ックからのガラスを加熱して所定太さ、寸法のガラスビ
ームを作製し、リトルトン粘度計にセットして昇温し、
粘度が107.6 ポイズに達したときの温度、すなわち軟化
点を測定した。[Measurement of softening point] Glass from a glass block is heated by a conventional method to produce a glass beam having a predetermined thickness and dimensions, set in a Littleton viscometer, and heated.
Temperature at which the viscosity reaches 10 7.6 poise i.e. to measure the softening point.
【００２４】〔光散乱率 (ヘーズ値) 〕誘電体層を形成
した基板ガラス (厚み３mm) について常法により、ヘー
ズメーターでもってヘーズ値を測定した。なお、ヘーズ
値は２％以下が良好とされる。[Light Scattering Rate (Haze Value)] The haze value of a substrate glass (thickness: 3 mm) on which a dielectric layer was formed was measured with a haze meter by a conventional method. The haze value is preferably 2% or less.
【００２５】〔透過率〕誘電体層を形成した基板ガラス
(厚み３mm) について常法により、分光光度計でもって
透過率を測定し、可視域における平均透過率を算定し
た。なお、可視光透過率は85％以上が良好とされる。[Transmittance] Substrate glass on which a dielectric layer is formed
(Thickness: 3 mm) The transmittance was measured by a conventional method using a spectrophotometer, and the average transmittance in the visible region was calculated. Note that the visible light transmittance is preferably 85% or more.
【００２６】〔失透の有無〕誘電体層について鏡下で失
透の有無を観察した。[Presence or absence of devitrification] The dielectric layer was observed under a mirror for the presence or absence of devitrification.
【００２７】〔マグネシア層の亀裂の有無〕誘電体層を
形成した基板ガラス (厚み３mm) について、誘電体層上
にスパッタリング法によりマグネシア膜を成膜し、さら
に450 ℃で15分熱処理した後、マグネシア膜の亀裂の発
生の有無を観察した。[Presence or absence of cracks in magnesia layer] On a substrate glass (thickness: 3 mm) on which a dielectric layer was formed, a magnesia film was formed on the dielectric layer by a sputtering method, and further heat-treated at 450 ° C. for 15 minutes. The occurrence of cracks in the magnesia film was observed.
【００２８】〔ガラス板の反り〕誘電体層を形成した基
板ガラス (厚み２mm) について常法により、非接触式真
直度・厚み測定機でもって反りの状態を測定し、長さ 3
00mm当たりの撓み深さが100μm 以下のものを良、 100
μm を越えるものを悪として評価した。[Warpage of Glass Plate] The state of warpage of a substrate glass (with a thickness of 2 mm) on which a dielectric layer was formed was measured by a conventional method using a non-contact straightness / thickness measuring instrument, and the length was measured to be 3 mm.
Good if the deflection depth per 100mm is 100μm or less, 100
Those exceeding μm were evaluated as evil.
【００２９】なお基板ガラスにおいて厚み２mmとしたの
は、基板を薄板とすることにより、より反りを生じ易く
し、厳しい区分評価を行えるようにするためである。The reason why the thickness of the substrate glass is set to 2 mm is that by making the substrate thin, the warpage is more likely to occur and strict classification evaluation can be performed.
【００３０】〔結果〕被膜形成用低融点ガラス組成およ
び、各種試験結果を表１に示す。表１から明らかなよう
に、本発明にかかる実施例においては、熱物性、光学特
性等において良好であり、透明で透視性のよい被膜形成
用低融点ガラス、特に反射型ＰＤＰの前面基板に透明な
絶縁被膜を形成するガラスとして好適である。[Results] Table 1 shows the composition of the low-melting glass for film formation and the results of various tests. As is clear from Table 1, in the examples according to the present invention, the thermo-physical properties, the optical properties, and the like are good, and the transparent low-melting-point glass for forming a coating film having good transparency, particularly, the transparent PDP is transparent on the front substrate. It is suitable as a glass for forming an insulative coating.
【００３１】他方比較例においては、熱物性が適正範囲
をはずれている、または光学特性において劣る、あるい
は基板の反りやマグネシア膜への悪影響がある等の不都
合点を有する。On the other hand, the comparative examples have disadvantages such as the thermal properties being out of the proper range, the optical properties being inferior, the warping of the substrate and the adverse effect on the magnesia film being caused.
【００３２】なお、実施例５におけるガラス組成中、Ca
O ２wt％に換え、CaO １wt％＋MgO１wt％、SrO １wt％
＋BaO １wt％とした場合も熱膨張係数、軟化点とも適正
範囲にあり、光散乱率、可視光線透過率その他の光学特
性等において良好であった。In the glass composition in Example 5, Ca
Instead of O 2wt%, CaO 1wt% + MgO 1wt%, SrO 1wt%
Even when + BaO was 1 wt%, both the thermal expansion coefficient and the softening point were within the appropriate ranges, and the light scattering coefficient, visible light transmittance and other optical characteristics were good.
【００３３】[0033]
【表１】 [Table 1]
【００３４】[0034]
【発明の効果】本発明によれば、熱物性、光学特性等に
おいて良好であり、透明な被膜形成用低融点ガラス、特
に反射型ＰＤＰの前面基板に透明な絶縁被膜を形成する
ガラスとして好適である。According to the present invention, the thermophysical properties, the optical properties, and the like are good, and the glass is suitable as a low-melting glass for forming a transparent film, particularly as a glass for forming a transparent insulating film on the front substrate of a reflective PDP. is there.
【図面の簡単な説明】[Brief description of the drawings]
【図１】反射型ＰＤＰの概略側断面図である。FIG. 1 is a schematic side sectional view of a reflection type PDP.
１--------前面基板ガラス ２--------透明電極 ３--------誘電体層 ４--------マグネシア層 1 -------- Front substrate glass 2 -------- Transparent electrode 3 -------- Dielectric layer 4 -------- Magnesia layer
Claims (2)
融点ガラスであって、その成分組成がwt％表示でSiO2
２〜７、B2O3 15〜25、Al2O3 ０〜８、ZnO ３〜15、Pb
O 60〜75、CaO 、MgO 、 SrO またはBaO より選択される
１種または２種以上を０〜６の範囲で含み、かつ軟化点
が 450〜 480℃、熱膨張係数が77〜90×10-7／℃である
ことを特徴とする被膜形成用低融点ガラス。1. A low-melting glass for forming an insulating film on a substrate, wherein the composition of the glass is SiO 2 in terms of wt%.
2~7, B 2 O 3 15~25, Al 2 O 3 0~8, ZnO 3~15, Pb
O 60 to 75, CaO, MgO, 1 kind selected from SrO or BaO or two or more include a range of 0 to 6, and a softening point of 450 to 480 ° C., a coefficient of thermal expansion of 77 to 90 × 10 - A low-melting glass for forming a coating film having a temperature of 7 / ° C.
ーンを透明な絶縁性の被膜で被覆するための低融点ガラ
スであることを特徴とする請求項１記載の被膜形成用低
融点ガラス。2. The low-melting glass according to claim 1, wherein the low-melting glass is a low-melting glass for covering a transparent electrode line pattern disposed on a reflective PDP substrate with a transparent insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8220885A JPH1067534A (en) | 1996-08-22 | 1996-08-22 | Low-melting glass for coating film formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8220885A JPH1067534A (en) | 1996-08-22 | 1996-08-22 | Low-melting glass for coating film formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1067534A true JPH1067534A (en) | 1998-03-10 |
Family
ID=16758070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8220885A Pending JPH1067534A (en) | 1996-08-22 | 1996-08-22 | Low-melting glass for coating film formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1067534A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100280883B1 (en) * | 1998-04-27 | 2001-02-01 | 구자홍 | Manufacturing method of dielectric thick film and phosphor film for plasma display device |
| KR100322605B1 (en) * | 1998-04-10 | 2002-06-20 | 구자홍 | Composition of Dielectric Layer for Plasma Display Panel |
| KR100326558B1 (en) * | 1998-09-01 | 2002-09-17 | 엘지전자주식회사 | Composition of Barrier Rib for Plasma Display Panel |
| JP2003128434A (en) * | 2001-10-19 | 2003-05-08 | Matsushita Electric Ind Co Ltd | Plasma display panel and method for manufacturing the same and glass composition |
| US6617789B2 (en) * | 2000-11-01 | 2003-09-09 | Asahi Glass Company, Limited | Glass for covering electrodes and plasma display panel |
| JP2008303075A (en) * | 2007-06-05 | 2008-12-18 | Central Glass Co Ltd | Insulating coating material |
-
1996
- 1996-08-22 JP JP8220885A patent/JPH1067534A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100322605B1 (en) * | 1998-04-10 | 2002-06-20 | 구자홍 | Composition of Dielectric Layer for Plasma Display Panel |
| KR100280883B1 (en) * | 1998-04-27 | 2001-02-01 | 구자홍 | Manufacturing method of dielectric thick film and phosphor film for plasma display device |
| US6291362B1 (en) | 1998-04-27 | 2001-09-18 | Lg Electronics Inc. | Method of fabricating dielectric layer and fluorescent film for plasma display device |
| KR100326558B1 (en) * | 1998-09-01 | 2002-09-17 | 엘지전자주식회사 | Composition of Barrier Rib for Plasma Display Panel |
| US6617789B2 (en) * | 2000-11-01 | 2003-09-09 | Asahi Glass Company, Limited | Glass for covering electrodes and plasma display panel |
| JP2003128434A (en) * | 2001-10-19 | 2003-05-08 | Matsushita Electric Ind Co Ltd | Plasma display panel and method for manufacturing the same and glass composition |
| JP2008303075A (en) * | 2007-06-05 | 2008-12-18 | Central Glass Co Ltd | Insulating coating material |
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