JP2006169047A - Lead-free low melting point glass - Google Patents

Lead-free low melting point glass Download PDF

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JP2006169047A
JP2006169047A JP2004364267A JP2004364267A JP2006169047A JP 2006169047 A JP2006169047 A JP 2006169047A JP 2004364267 A JP2004364267 A JP 2004364267A JP 2004364267 A JP2004364267 A JP 2004364267A JP 2006169047 A JP2006169047 A JP 2006169047A
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glass
lead
free low
low melting
melting point
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Yasumasa Shimooka
泰真 下岡
Naoya Hayakawa
直也 早川
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Central Glass Co Ltd
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Central Glass Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/062Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064Glass compositions containing silica with less than 40% silica by weight containing boron
    • C03C3/066Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/12Silica-free oxide glass compositions
    • C03C3/14Silica-free oxide glass compositions containing boron
    • C03C3/145Silica-free oxide glass compositions containing boron containing aluminium or beryllium

Abstract

<P>PROBLEM TO BE SOLVED: To provide lead-free low melting point glass which is used for coating and sealing an electronic material substrate and which does not contain PbO practically. <P>SOLUTION: B<SB>2</SB>O<SB>3</SB>-ZnO-Bi<SB>2</SB>O<SB>3</SB>-Al<SB>2</SB>O<SB>3</SB>-based lead-free low melting point glass involves by weight 2-10% B<SB>2</SB>O<SB>3</SB>, 3-11% ZnO, 79-87% Bi<SB>2</SB>O<SB>3</SB>and 0.1-5% Al<SB>2</SB>O<SB>3</SB>. The thermal expansion coefficient of the glass is (85-110)×10<SP>-7</SP>/°C at 30-300°C and its softening point is 380°C or higher and 500°C or lower. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、プラズマディスプレイパネル、液晶表示パネル、エレクトロルミネッセンスパネル、蛍光表示パネル、エレクトロクロミック表示パネル、発光ダイオード表示パネル、ガス放電式表示パネル等に代表される電子材料基板用の絶縁性被膜材料及び封着材料及び、光学フィルタの周辺部(光遮光部)用のカラーセラミック材料として用いられる低融点ガラスに関する。   The present invention relates to an insulating coating material for an electronic material substrate typified by a plasma display panel, a liquid crystal display panel, an electroluminescence panel, a fluorescent display panel, an electrochromic display panel, a light emitting diode display panel, a gas discharge display panel, and the like. The present invention relates to a sealing material and a low-melting glass used as a color ceramic material for a peripheral portion (light shielding portion) of an optical filter.

従来から電子部品の接着や封着材料として、或いは電子部品に形成された電極や抵抗体の保護や絶縁のための被服材料としてガラスが用いられている。特に近年の電子部品の発達に伴い、プラズマディスプレイパネル、液晶表示パネル、エレクトロルミネッセンスパネル、蛍光表示パネル、エレクトロクロミック表示パネル、発光ダイオード表示パネル、ガス放電式表示パネル等、多くの種類の表示パネルが開発され、中でも、プラズマディスプレイパネル(以下、PDPと略す)が薄型かつ大型の平板型カラー表示装置として注目を集めている。   Conventionally, glass has been used as a bonding material or sealing material for electronic components, or as a clothing material for protecting and insulating electrodes and resistors formed on electronic components. In particular, with the development of electronic components in recent years, many types of display panels such as plasma display panels, liquid crystal display panels, electroluminescence panels, fluorescent display panels, electrochromic display panels, light-emitting diode display panels, and gas discharge display panels have been developed. In particular, plasma display panels (hereinafter abbreviated as PDPs) are attracting attention as thin and large flat color display devices.

そしてこれらに用いられるガラスは、その用途に応じて化学耐久性、機械的強度、流動性、電気絶縁性等種々の特性が要求されるが、それゆえ何れの用途においてもガラスの融点を下げる効果が極めて大きいPbOを多量に含有した低融点ガラスが広く用いられている(例えば、特許文献1参照)。   The glass used in these materials is required to have various properties such as chemical durability, mechanical strength, fluidity, and electrical insulation depending on the application. Therefore, the effect of lowering the melting point of the glass in any application. A low-melting glass containing a large amount of PbO having a very large value is widely used (see, for example, Patent Document 1).

しかしながらPbOは、人体や環境に与える弊害が大きく、近年その採用を避ける趨勢にあり、PDPを始めとする電子材料では無鉛化が検討されている(例えば、特許文献2、特許文献3参照)。
特開2001−52621号公報 特開2000−219536号公報 特開平9−227214号公報
However, PbO has a great adverse effect on the human body and the environment, and there is a tendency to avoid its adoption in recent years. Lead-free electronic materials such as PDP are being studied (for example, see Patent Document 2 and Patent Document 3).
JP 2001-52621 A JP 2000-219536 A JP-A-9-227214

従来、低融点ガラス、例えば電子部品の接着や封着材料として、或いは電子部品に形成された電極や抵抗体の保護や絶縁のための被服材料としてのガラスには鉛系のガラスが採用されてきた。鉛成分はガラスを低融点とするうえで重要な成分ではあるものの、人体や環境に与える弊害が大きく、近年その採用を避ける趨勢にあり、PDPを始めとする電子材料では無鉛ガラスが求められている。
また、接着或いは封着の工程において、場合によっては、一度高温まで昇温し、その後一旦冷ました後に任意の温度で接着する場合がある。高温時に結晶化するとその後の接着の工程では接着出来ないため、高温時に結晶化しない事が望まれている。
Conventionally, lead-based glass has been employed as a low melting glass, for example, as a material for bonding or sealing electronic parts, or as a material for protecting or insulating electrodes and resistors formed on electronic parts. It was. Although the lead component is an important component for making the glass have a low melting point, it has a great detrimental effect on the human body and the environment. In recent years, there has been a tendency to avoid its use. Lead-free glass is required for electronic materials such as PDPs. Yes.
Further, in the bonding or sealing process, in some cases, the temperature is once raised to a high temperature, and then cooled once, and then bonded at an arbitrary temperature. Since crystallization at a high temperature cannot be performed in the subsequent bonding process, it is desired not to crystallize at a high temperature.

PbO系に替わる無鉛組成では、不安定なガラスが多く、高温で処理された場合、焼成途中で結晶化し、その機能が十分発揮されない。   In the lead-free composition replacing the PbO system, there are many unstable glasses, and when processed at a high temperature, it is crystallized during firing and its function is not fully exhibited.

すなわち、特開2001−52621号公報は、低融点ガラスとしての効果は認められるが、鉛を含んでいるという基本的な問題がある。   That is, Japanese Patent Application Laid-Open No. 2001-52621 has a basic problem of containing lead, although the effect as a low melting point glass is recognized.

さらに、特開000−219536号公報及び特開平9−227214号公報は、鉛を含んでいないが、不安定なガラスであり、高温で処理された場合、焼成途中で結晶化し、その機能が十分発揮されない。   Furthermore, Japanese Patent Laid-Open No. 000-219536 and Japanese Patent Laid-Open No. 9-227214, which do not contain lead, are unstable glass, and when processed at high temperature, they crystallize during firing and have sufficient function. It is not demonstrated.

本発明は、透明絶縁性の無鉛低融点ガラスにおいて、重量%でBを2〜10、ZnOを3〜11、Biを79〜87、Alを0.1〜5含むことを特徴とするB−ZnO−Bi−Al系無鉛低融点ガラスである。 The present invention is a transparent insulating lead-free low-melting glass, wherein B 2 O 3 is 2 to 10, ZnO is 3 to 11, Bi 2 O 3 is 79 to 87, and Al 2 O 3 is 0.1 to 0.1% by weight. 5 B 2 O 3 —ZnO—Bi 2 O 3 —Al 2 O 3 -based lead-free low melting point glass.

また、重量%で、SiOを0〜8含むことを特徴とする上記の無鉛低融点ガラスである。 Further, in weight%, which is above the lead-free low-melting glass, characterized in that it comprises a SiO 2 0 to 8.

また、30℃〜300℃における熱膨張係数が(85〜110)×10−7/℃、軟化点が380℃以上500℃以下であることを特徴とする上記の無鉛低融点ガラスである。 Moreover, it is said lead-free low melting glass characterized by the thermal expansion coefficient in 30-300 degreeC being (85-110) * 10 < -7 > / degreeC, and a softening point being 380 degreeC or more and 500 degrees C or less.

さらに、上記の無鉛低融点ガラスを使っている電子材料用基板である。   Furthermore, it is an electronic material substrate using the above lead-free low-melting glass.

さらにまた、上記の無鉛低融点ガラスを使っているPDP用パネルである。   Still further, the present invention is a PDP panel using the above lead-free low melting point glass.

さらにまた、上記の無鉛低融点ガラスを使っているPDP用カバーフィルタである。   Furthermore, it is a cover filter for PDP using the above lead-free low melting point glass.

本発明により、プラズマディスプレイパネルに代表される電子基板材料において、高温時に結晶しにくく安定な無鉛低融点ガラス組成物を得ることが出来る。   According to the present invention, in an electronic substrate material typified by a plasma display panel, it is possible to obtain a stable lead-free low-melting glass composition that is difficult to crystallize at high temperatures.

本発明は、透明絶縁性の無鉛低融点ガラスにおいて、重量%でBを2〜10、ZnOを3〜11、Biを79〜87、Alを0.1〜5含むことを特徴とするB−ZnO−Bi−Al系無鉛低融点ガラスである。 The present invention is a transparent insulating lead-free low-melting glass, wherein B 2 O 3 is 2 to 10, ZnO is 3 to 11, Bi 2 O 3 is 79 to 87, and Al 2 O 3 is 0.1 to 0.1% by weight. 5 B 2 O 3 —ZnO—Bi 2 O 3 —Al 2 O 3 -based lead-free low melting point glass.

はガラス形成成分であり、ガラス溶融を容易とし、ガラスの熱膨張係数において過度の上昇を抑え、かつ、焼付け時にガラスに適度の流動性を与え、ガラスの誘電率を低下させるものである。ガラス中に2〜10%(重量%、以下においても同様である)の範囲で含有させるのが好ましい。2%未満ではガラスの流動性が不充分となり、焼結性が損なわれる。他方10%を越えるとガラスの安定性を低下させる。より好ましくは4〜7%の範囲である。 B 2 O 3 is a glass-forming component, facilitates glass melting, suppresses an excessive increase in the coefficient of thermal expansion of glass, gives moderate fluidity to glass during baking, and lowers the dielectric constant of glass It is. It is preferable to make it contain in 2 to 10% (weight%, it is the same also in the following) in glass. If it is less than 2%, the fluidity of the glass becomes insufficient, and the sinterability is impaired. On the other hand, if it exceeds 10%, the stability of the glass is lowered. More preferably, it is 4 to 7% of range.

ZnOはガラスの軟化点を下げ、熱膨張係数を適宜範囲に調整するもので、ガラス中に3〜11の範囲で含有させるのが好ましい。3%未満では上記作用を発揮し得ず、他方11%を越えるとガラスが不安定となり失透を生じ易い。より好ましくは6〜10%の範囲である。   ZnO lowers the softening point of the glass and adjusts the thermal expansion coefficient to an appropriate range, and is preferably contained in the range of 3 to 11 in the glass. If it is less than 3%, the above-mentioned action cannot be exhibited, while if it exceeds 11%, the glass becomes unstable and devitrification tends to occur. More preferably, it is 6 to 10% of range.

Biはガラスの軟化点を下げ、適度に流動性を与え、熱膨張係数を適宜範囲に調整するもので、79〜87%の範囲で含有させることが望ましい。79%未満では上記作用を発揮しえず、87%を超えると熱膨張係数が高くなり過ぎる。より好ましくは82〜86%の範囲である。 Bi 2 O 3 lowers the softening point of the glass, imparts moderate fluidity, and adjusts the thermal expansion coefficient to an appropriate range, and is desirably contained in the range of 79 to 87%. If it is less than 79%, the above effect cannot be exhibited, and if it exceeds 87%, the thermal expansion coefficient becomes too high. More preferably, it is 82 to 86% of range.

Alはガラスを安定化させるもので、0.1〜5%の範囲で含有させることが好ましい。0.1未満では上記作用を発揮しえず、5%を超えるとガラスが不安定となる。より好ましくは0.1〜3%の範囲である。 Al 2 O 3 stabilizes the glass and is preferably contained in the range of 0.1 to 5%. If it is less than 0.1, the above effect cannot be exhibited, and if it exceeds 5%, the glass becomes unstable. More preferably, it is 0.1 to 3% of range.

また、重量%で、SiOを0〜8含むことを特徴とする上記の無鉛低融点ガラスである。 Further, in weight%, which is above the lead-free low-melting glass, characterized in that it comprises a SiO 2 0 to 8.

SiOはガラス形成成分であり、別のガラス形成成分であるBと共存させることにより、安定したガラスを形成することができるもので、0〜8%の範囲で含有させる。8%を越えると、ガラスの軟化点が上昇し、成形性、作業性が困難となる。 SiO 2 is a glass forming component, and can coexist with B 2 O 3 , which is another glass forming component, to form a stable glass, and is contained in the range of 0 to 8%. If it exceeds 8%, the softening point of the glass will increase, making the formability and workability difficult.

この他にも、一般的な酸化物で表すRO(MgO、CaO、SrO、BaO)、RO(LiO、NaO、KO)、In、TiO、SnO、TeOなどを上記性質を損なわない範囲で1%まで加えてもよい。 In addition, RO (MgO, CaO, SrO, BaO), R 2 O (Li 2 O, Na 2 O, K 2 O), In 2 O 3 , TiO 2 , SnO 2 represented by general oxides. TeO 2 or the like may be added up to 1% as long as the above properties are not impaired.

実質的にPbOを含まないことにより、人体や環境に与える影響を皆無とすることができる。ここで、実質的にPbOを含まないとは、PbOがガラス原料中に不純物として混入する程度の量を意味する。例えば、低融点ガラス中における0.3wt%以下の範囲であれば、先述した弊害、すなわち人体、環境に対する影響、絶縁特性等に与える影響は殆どなく、実質的にPbOの影響を受けないことになる。   By substantially not containing PbO, it is possible to eliminate the influence on the human body and the environment. Here, “substantially free of PbO” means an amount of PbO mixed as an impurity in the glass raw material. For example, if it is in the range of 0.3 wt% or less in the low-melting glass, there is almost no influence on the adverse effects described above, that is, the influence on the human body and the environment, the insulation characteristics, etc., and it is not substantially affected by PbO. Become.

30℃〜300℃における熱膨張係数が(85〜110)×10−7/℃、軟化点が380℃以上500℃以下である上記の無鉛低融点ガラスである。熱膨張係数が(85〜110)×10−7/℃を外れると厚膜形成時及び接着、封着時に剥離、基板の反り等の問題が発生する。好ましくは、(90〜105)×10−7/℃の範囲である。また、軟化点が500℃を越えると基板の軟化変形などの問題が発生する。好ましくは、400℃以上490℃以下である。 The above lead-free low melting point glass having a thermal expansion coefficient of (85 to 110) × 10 −7 / ° C. at 30 ° C. to 300 ° C. and a softening point of 380 ° C. or more and 500 ° C. or less. When the thermal expansion coefficient is outside (85-110) × 10 −7 / ° C., problems such as peeling and warping of the substrate occur during thick film formation, adhesion, and sealing. Preferably, it is in the range of (90 to 105) × 10 −7 / ° C. If the softening point exceeds 500 ° C., problems such as softening deformation of the substrate occur. Preferably, it is 400 degreeC or more and 490 degrees C or less.

さらにまた、上記の低融点ガラスを使っている電子材料用基板である。   Furthermore, it is a substrate for electronic materials using the low melting point glass.

さらにまた、上記の低融点ガラスを使っているPDP用パネルである。   Furthermore, the present invention is a PDP panel using the above-mentioned low melting point glass.

さらにまた、上記の低融点ガラスを使っているPDP用カバーフィルタである。   Furthermore, the present invention is a PDP cover filter using the low melting point glass.

本発明の無鉛低融点ガラスは、粉末化して使用されることが多い。この粉末化されたガラスは、必要に応じてムライトやアルミナに代表される低膨張セラミックスフィラー、耐熱顔料等と混合され、次に有機オイルと混練してペースト化されるのが一般的である。   The lead-free low melting point glass of the present invention is often used after being powdered. This powdered glass is generally mixed with a low expansion ceramic filler typified by mullite or alumina, a heat-resistant pigment or the like as required, and then kneaded with an organic oil to form a paste.

ガラス基板としては透明なガラス基板、特にソーダ石灰シリカ系ガラス、または、それに類似するガラス(高歪点ガラス)、あるいは、アルカリ分の少ない(又は殆ど無い)アルミノ石灰ホウ珪酸系ガラスが多用されている。   As the glass substrate, a transparent glass substrate, particularly soda-lime-silica glass, or similar glass (high strain point glass), or an alumino-lime borosilicate glass with little (or almost no) alkali content is used. Yes.

以下、実施例に基づき、説明する。   Hereinafter, a description will be given based on examples.

(低融点ガラス混合ペーストの作製)
源としてほう酸を、ZnO源として亜鉛華を、Bi源として酸化ビスマスを、SiO源として微粉珪砂を、Al源として酸化アルミニウムを、LiO源として炭酸リチウムを、NaO源として炭酸ナトリウムを、LiO源として炭酸リチウムを、KO源として炭酸カリウムを、MgO源として炭酸マグネシウムを、BaO源として炭酸バリウムを、CaO源として炭酸カルシウムを、SrO源として炭酸ストロンチウムを使用した。これらを所望の低融点ガラス組成となるべく調合したうえで、白金ルツボに投入し、電気加熱炉内で1000〜1300℃、1〜2時間で加熱溶融して表1の実施例1〜4、表2の比較例1〜4に示す組成のガラスを得た。
(Production of low melting point glass mixed paste)
Boric acid as the B 2 O 3 source, zinc white as the ZnO source, bismuth oxide as the Bi 2 O 3 source, fine silica sand as the SiO 2 source, aluminum oxide as the Al 2 O 3 source, carbonic acid as the Li 2 O source Lithium, sodium carbonate as Na 2 O source, lithium carbonate as Li 2 O source, potassium carbonate as K 2 O source, magnesium carbonate as MgO source, barium carbonate as BaO source, calcium carbonate as CaO source Strontium carbonate was used as the SrO source. After preparing these as a desired low melting-point glass composition, it puts into a platinum crucible, heat-melts in 1000-1300 degreeC for 1-2 hours in an electric heating furnace, Examples 1-4 of Table 1, Table 1 The glass of the composition shown in 2 comparative examples 1-4 was obtained.

Figure 2006169047
Figure 2006169047

Figure 2006169047
Figure 2006169047

ガラスの一部は型に流し込み、ブロック状にして熱物性(熱膨張係数、軟化点)測定用に供した。残余のガラスは急冷双ロール成形機にてフレーク状とし、粉砕装置で平均粒径1〜3μm、最大粒径10μm未満の粉末状に整粒した。   A part of the glass was poured into a mold, made into a block shape, and used for measurement of thermal properties (thermal expansion coefficient, softening point). The remaining glass was formed into flakes with a rapid cooling twin roll molding machine and sized with a pulverizer into a powder having an average particle size of 1 to 3 μm and a maximum particle size of less than 10 μm.

次いで、αテルピネオールとブチルカルビトールアセテートからなるペーストオイルにバインダーとしてのエチルセルロースと上記ガラス粉を混合し、粘度、300±50ポイズ程度のペーストを調製した。   Next, paste oil composed of α-terpineol and butyl carbitol acetate was mixed with ethyl cellulose as a binder and the above glass powder to prepare a paste having a viscosity of about 300 ± 50 poise.

次いで、厚さ1mm程度となるように上記ペーストをガラス基板に塗布し、電気炉で500℃まで焼成及び30分保持し、その後取りだし結晶化が顕著なものを不良、その他を良好とした。   Next, the paste was applied to a glass substrate so as to have a thickness of about 1 mm, baked to 500 ° C. and held for 30 minutes in an electric furnace, and then the one with remarkable crystallization was defective and the others were good.

なお、軟化点は、リトルトン粘度計を用い、粘度係数η=107.6 に達したときの温度とした。また、熱膨張係数は、熱膨張計を用い、5℃/分で昇温したときの30〜300℃での伸び量から求めた。 The softening point was the temperature when the viscosity coefficient η = 10 7.6 was reached using a Littleton viscometer. Moreover, the thermal expansion coefficient was calculated | required from the amount of elongation at 30-300 degreeC when it heated up at 5 degree-C / min using the thermal dilatometer.

(結果)
低融点ガラス組成および、各種試験結果を表に示す。
(result)
The low melting point glass composition and various test results are shown in the table.

表1における実施例1〜4に示すように、本発明の組成範囲内においては、軟化点が380℃〜500℃であり、好適な熱膨張係数(85〜110)×10−7/℃を有しており、更には高温での結晶化が顕著ではなく、電子材料基板用の絶縁性被膜材料及び封着材料、及びカラーセラミック材料用のガラスとして好適である。 As shown in Examples 1 to 4 in Table 1, within the composition range of the present invention, the softening point is 380 ° C. to 500 ° C., and a suitable thermal expansion coefficient (85 to 110) × 10 −7 / ° C. Furthermore, crystallization at high temperature is not remarkable, and it is suitable as an insulating coating material and sealing material for an electronic material substrate, and glass for a color ceramic material.

他方、本発明の組成範囲を外れる表2における比較例1〜4は、高温での結晶化が顕著である、又は好ましい物性値を示さず、絶縁性被膜材料及び封着材料、及びカラーセラミック材料用のガラスとしては適用し得ない。   On the other hand, Comparative Examples 1 to 4 in Table 2 outside the composition range of the present invention show remarkable crystallization at high temperature or do not show preferable physical property values, and insulating coating materials and sealing materials, and color ceramic materials It cannot be applied as a glass for use.

Claims (6)

透明絶縁性の無鉛低融点ガラスにおいて、重量%でBを2〜10、ZnOを3〜11、Biを79〜87、Alを0.1〜5含むことを特徴とするB−ZnO−Bi−Al系無鉛低融点ガラス。 The transparent insulating lead-free low-melting-point glass, a B 2 O 3 by weight percent 2-10, the ZnO 3~11, Bi 2 O 3 and 79-87, that the Al 2 O 3 containing 0.1 to 5 B 2 O 3 -ZnO-Bi 2 O 3 -Al 2 O 3 based lead-free low-melting glass, characterized. 重量%で、SiOを0〜8含むことを特徴とする請求項1に記載の無鉛低融点ガラス。 The lead-free low-melting-point glass according to claim 1, wherein the lead-free low-melting glass contains 0 to 8 SiO 2 by weight. 30℃〜300℃における熱膨張係数が(85〜110)×10−7/℃、軟化点が380℃以上500℃以下であることを特徴とする請求項1乃至2のいずれかに記載の無鉛低融点ガラス。 The lead-free lead according to any one of claims 1 to 2, wherein a thermal expansion coefficient at 30 to 300 ° C is (85 to 110) x 10 -7 / ° C, and a softening point is 380 to 500 ° C. Low melting glass. 請求項1乃至3のいずれかの無鉛低融点ガラスを使っていることを特徴とする電子材料用基板。 A lead-free low-melting glass according to any one of claims 1 to 3 is used. 請求項1乃至3のいずれかの無鉛低融点ガラスを使っていることを特徴とするPDP用パネル。 4. A PDP panel using the lead-free low melting point glass according to claim 1. 請求項1乃至3のいずれかの無鉛低融点ガラスを使っていることを特徴とするPDP用カバーフィルタ。
A PDP cover filter using the lead-free low-melting glass according to any one of claims 1 to 3.
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007080904A1 (en) * 2006-01-12 2007-07-19 Toray Industries, Inc. Photosensitive composition, display member, and process for producing the same
WO2008007596A1 (en) * 2006-07-14 2008-01-17 Central Glass Company, Limited Lead-free low-melting glass
JP2008303076A (en) * 2007-06-05 2008-12-18 Central Glass Co Ltd Lead-free insulating coating material
WO2009128527A1 (en) 2008-04-18 2009-10-22 日本電気硝子株式会社 Glass composition for dye-sensitized solar cell and material for dye-sensitized solar cell
WO2010032706A1 (en) * 2008-09-19 2010-03-25 セントラル硝子株式会社 Lead-free low-melting-point glass
JP2010100509A (en) * 2008-09-29 2010-05-06 Central Glass Co Ltd Lead-free low-melting point glass
WO2010113839A1 (en) * 2009-03-31 2010-10-07 セントラル硝子株式会社 Lead-free low-melting-point glass
WO2010113838A1 (en) * 2009-03-31 2010-10-07 セントラル硝子株式会社 Colored lead-free glass for sealing
KR20120007497A (en) 2009-03-27 2012-01-20 히다치 훈마츠 야킨 가부시키가이샤 Glass composition and covering and sealing members using same
US8871348B2 (en) 2009-07-24 2014-10-28 Nippon Electric Glass Co. Ltd. Glass substrate with conductive film for solar cell
JP2016042535A (en) * 2014-08-18 2016-03-31 積水化学工業株式会社 Electronic component device and bonding material for ceramic package
CN114195395A (en) * 2021-12-08 2022-03-18 安徽大学 Low-melting-point lead-free glass powder for passivating and protecting semiconductor and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004238273A (en) * 2002-03-29 2004-08-26 Matsushita Electric Ind Co Ltd Bismuth-based glass composition, and magnetic head and plasma display panel using it as sealing member
JP2004284934A (en) * 2002-04-24 2004-10-14 Central Glass Co Ltd Lead-free low-melting point glass
JP2005213103A (en) * 2004-01-30 2005-08-11 Nihon Yamamura Glass Co Ltd Sealing composition
JP2006137637A (en) * 2004-11-12 2006-06-01 Asahi Techno Glass Corp Low melting glass, sealing composition and sealing paste

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004238273A (en) * 2002-03-29 2004-08-26 Matsushita Electric Ind Co Ltd Bismuth-based glass composition, and magnetic head and plasma display panel using it as sealing member
JP2004284934A (en) * 2002-04-24 2004-10-14 Central Glass Co Ltd Lead-free low-melting point glass
JP2005213103A (en) * 2004-01-30 2005-08-11 Nihon Yamamura Glass Co Ltd Sealing composition
JP2006137637A (en) * 2004-11-12 2006-06-01 Asahi Techno Glass Corp Low melting glass, sealing composition and sealing paste

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* Cited by examiner, † Cited by third party
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WO2007080904A1 (en) * 2006-01-12 2007-07-19 Toray Industries, Inc. Photosensitive composition, display member, and process for producing the same
WO2008007596A1 (en) * 2006-07-14 2008-01-17 Central Glass Company, Limited Lead-free low-melting glass
JP2008303076A (en) * 2007-06-05 2008-12-18 Central Glass Co Ltd Lead-free insulating coating material
WO2009128527A1 (en) 2008-04-18 2009-10-22 日本電気硝子株式会社 Glass composition for dye-sensitized solar cell and material for dye-sensitized solar cell
EP2295383A4 (en) * 2008-04-18 2012-10-10 Nippon Electric Glass Co Glass composition for dye-sensitized solar cell and material for dye-sensitized solar cell
WO2010032706A1 (en) * 2008-09-19 2010-03-25 セントラル硝子株式会社 Lead-free low-melting-point glass
JP2010070426A (en) * 2008-09-19 2010-04-02 Central Glass Co Ltd Lead-free low melting point glass
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US9048056B2 (en) 2009-03-27 2015-06-02 Hitachi Powdered Metals Co., Ltd. Glass composition and covering and sealing members using same
WO2010113839A1 (en) * 2009-03-31 2010-10-07 セントラル硝子株式会社 Lead-free low-melting-point glass
WO2010113838A1 (en) * 2009-03-31 2010-10-07 セントラル硝子株式会社 Colored lead-free glass for sealing
JP2010235408A (en) * 2009-03-31 2010-10-21 Central Glass Co Ltd Colored lead-free glass for sealing
JP2010235409A (en) * 2009-03-31 2010-10-21 Central Glass Co Ltd Lead-free low melting point glass
US8871348B2 (en) 2009-07-24 2014-10-28 Nippon Electric Glass Co. Ltd. Glass substrate with conductive film for solar cell
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