JPH10512716A - オーム接触体およびこのようなオーム接触体を備えた半導体デバイスを製造する方法 - Google Patents
オーム接触体およびこのようなオーム接触体を備えた半導体デバイスを製造する方法Info
- Publication number
- JPH10512716A JPH10512716A JP8522201A JP52220196A JPH10512716A JP H10512716 A JPH10512716 A JP H10512716A JP 8522201 A JP8522201 A JP 8522201A JP 52220196 A JP52220196 A JP 52220196A JP H10512716 A JPH10512716 A JP H10512716A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sic
- aluminum
- titanium
- ohmic contacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 229910021431 alpha silicon carbide Inorganic materials 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000010936 titanium Substances 0.000 claims abstract description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 229910021341 titanium silicide Inorganic materials 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- 238000005245 sintering Methods 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910018125 Al-Si Inorganic materials 0.000 description 3
- 229910018520 Al—Si Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.α−SiC層の上にアルミニウム、チタンおよびシリコンの層を沈着する 段階と、 前記沈着された層をアルミニウム−チタン−シリサイドに変換するために前記 沈着された層を焼鈍しする段階と、 を有することを特徴とする、半導体デバイスの中のp形α−SiC層に対するオ ーム接触体を作成する方法。 2.請求項1記載の方法において、前記α−SiC層の上にアルミニウム層を 最初に沈着し、次に前記アルミニウム層の上にチタン層を沈着し、そして最後に 前記チタン層の上にシリコン層を沈着することを特徴とする、前記方法。 3.請求項1または請求項2に記載の方法において、組合わせ厚さが300n m以下である前記層を沈着することを特徴とする、前記方法。 4.請求項1〜請求項3のいずれかに記載の方法において、少なくとも900 ℃の温度で前記層を焼鈍しすることを特徴とする、前記方法。 5.請求項1〜請求項4のいずれかに記載の方法において、950℃の温度で 前記層を焼鈍しすることを特徴とする、前記方法。 6.請求項1〜請求項5のいずれかに記載の方法において、少なくとも200 秒の時間間隔の間前記層を焼鈍しすることを特徴とする、前記方法。 7.アルミニウム−チタン−シリサイドで構成される少なくとも1個のオーム 接触体5がα−SiC層3bの上に備えられることを特徴とする、p形α−Si C層3bを有する半導体デバイス1。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9500152-5 | 1995-01-18 | ||
SE9500152A SE504916C2 (sv) | 1995-01-18 | 1995-01-18 | Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt |
PCT/SE1996/000035 WO1996022611A1 (en) | 1995-01-18 | 1996-01-17 | A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH10512716A true JPH10512716A (ja) | 1998-12-02 |
JP3930561B2 JP3930561B2 (ja) | 2007-06-13 |
Family
ID=20396858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52220196A Expired - Lifetime JP3930561B2 (ja) | 1995-01-18 | 1996-01-17 | オーム接触体およびこのようなオーム接触体を備えた半導体デバイスを製造する方法 |
Country Status (13)
Country | Link |
---|---|
US (2) | US5877077A (ja) |
EP (1) | EP0804802B1 (ja) |
JP (1) | JP3930561B2 (ja) |
KR (1) | KR100406247B1 (ja) |
CN (1) | CN1088256C (ja) |
AU (1) | AU4499596A (ja) |
CA (1) | CA2210222A1 (ja) |
DE (1) | DE69613674T2 (ja) |
ES (1) | ES2160799T3 (ja) |
FI (1) | FI973555A0 (ja) |
HK (1) | HK1008264A1 (ja) |
SE (1) | SE504916C2 (ja) |
WO (1) | WO1996022611A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010134415A1 (ja) * | 2009-05-22 | 2010-11-25 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
WO2011043120A1 (ja) * | 2009-10-05 | 2011-04-14 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JPWO2009128419A1 (ja) * | 2008-04-15 | 2011-08-04 | 住友電気工業株式会社 | 半導体装置 |
WO2014027519A1 (ja) * | 2012-08-13 | 2014-02-20 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
WO2014027518A1 (ja) * | 2012-08-13 | 2014-02-20 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6459100B1 (en) | 1998-09-16 | 2002-10-01 | Cree, Inc. | Vertical geometry ingan LED |
US6599644B1 (en) | 2000-10-06 | 2003-07-29 | Foundation For Research & Technology-Hellas | Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide |
JP4545975B2 (ja) * | 2001-03-27 | 2010-09-15 | 日本特殊陶業株式会社 | 炭化珪素半導体用電極の製造方法、及び炭化珪素半導体用電極を備える炭化珪素半導体素子の製造方法 |
US7297626B1 (en) | 2001-08-27 | 2007-11-20 | United States Of America As Represented By The Secretary Of The Army | Process for nickel silicide Ohmic contacts to n-SiC |
JP4036075B2 (ja) * | 2002-10-29 | 2008-01-23 | 豊田合成株式会社 | p型SiC用電極の製造方法 |
US6747291B1 (en) | 2003-01-10 | 2004-06-08 | The United States Of America As Represented By The Secretary Of The Air Force | Ohmic contacts on p-type silicon carbide using carbon films |
US6815323B1 (en) | 2003-01-10 | 2004-11-09 | The United States Of America As Represented By The Secretary Of The Air Force | Ohmic contacts on n-type silicon carbide using carbon films |
US20060006393A1 (en) * | 2004-07-06 | 2006-01-12 | Ward Allan Iii | Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices |
JP5449786B2 (ja) * | 2009-01-15 | 2014-03-19 | 昭和電工株式会社 | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 |
US8963163B2 (en) | 2009-10-05 | 2015-02-24 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
CA2769697A1 (en) | 2010-04-14 | 2011-10-20 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method for manufacturing same |
FR2974944B1 (fr) | 2011-05-02 | 2013-06-14 | Commissariat Energie Atomique | Procédé de formation d'une fracture dans un matériau |
US9099578B2 (en) * | 2012-06-04 | 2015-08-04 | Nusola, Inc. | Structure for creating ohmic contact in semiconductor devices and methods for manufacture |
CN102931224A (zh) * | 2012-08-21 | 2013-02-13 | 中国科学院微电子研究所 | 用于P-SiC欧姆接触的界面过渡层复合结构及其制备方法 |
CN102931054B (zh) * | 2012-08-21 | 2014-12-17 | 中国科学院微电子研究所 | 一种实现P型SiC材料低温欧姆合金退火的方法 |
US9443772B2 (en) | 2014-03-19 | 2016-09-13 | Globalfoundries Inc. | Diffusion-controlled semiconductor contact creation |
US9397181B2 (en) | 2014-03-19 | 2016-07-19 | International Business Machines Corporation | Diffusion-controlled oxygen depletion of semiconductor contact interface |
US10269714B2 (en) | 2016-09-06 | 2019-04-23 | International Business Machines Corporation | Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3492719A (en) * | 1967-03-10 | 1970-02-03 | Westinghouse Electric Corp | Evaporated metal contacts for the fabrication of silicon carbide devices |
JPS6271271A (ja) * | 1985-09-24 | 1987-04-01 | Sharp Corp | 炭化珪素半導体の電極構造 |
US5319220A (en) * | 1988-01-20 | 1994-06-07 | Sharp Kabushiki Kaisha | Silicon carbide semiconductor device |
CA2008176A1 (en) * | 1989-01-25 | 1990-07-25 | John W. Palmour | Silicon carbide schottky diode and method of making same |
JP2509713B2 (ja) * | 1989-10-18 | 1996-06-26 | シャープ株式会社 | 炭化珪素半導体装置およびその製造方法 |
US5323022A (en) * | 1992-09-10 | 1994-06-21 | North Carolina State University | Platinum ohmic contact to p-type silicon carbide |
US5561829A (en) * | 1993-07-22 | 1996-10-01 | Aluminum Company Of America | Method of producing structural metal matrix composite products from a blend of powders |
US5539217A (en) * | 1993-08-09 | 1996-07-23 | Cree Research, Inc. | Silicon carbide thyristor |
JP3085078B2 (ja) * | 1994-03-04 | 2000-09-04 | 富士電機株式会社 | 炭化けい素電子デバイスの製造方法 |
US5449925A (en) * | 1994-05-04 | 1995-09-12 | North Carolina State University | Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
-
1995
- 1995-01-18 SE SE9500152A patent/SE504916C2/sv not_active IP Right Cessation
-
1996
- 1996-01-17 US US08/875,038 patent/US5877077A/en not_active Expired - Lifetime
- 1996-01-17 DE DE69613674T patent/DE69613674T2/de not_active Expired - Lifetime
- 1996-01-17 CN CN96191499A patent/CN1088256C/zh not_active Expired - Lifetime
- 1996-01-17 ES ES96901172T patent/ES2160799T3/es not_active Expired - Lifetime
- 1996-01-17 CA CA002210222A patent/CA2210222A1/en not_active Abandoned
- 1996-01-17 JP JP52220196A patent/JP3930561B2/ja not_active Expired - Lifetime
- 1996-01-17 AU AU44995/96A patent/AU4499596A/en not_active Abandoned
- 1996-01-17 WO PCT/SE1996/000035 patent/WO1996022611A1/en active IP Right Grant
- 1996-01-17 KR KR1019970704752A patent/KR100406247B1/ko not_active IP Right Cessation
- 1996-01-17 EP EP96901172A patent/EP0804802B1/en not_active Expired - Lifetime
-
1997
- 1997-08-29 FI FI973555A patent/FI973555A0/fi active IP Right Revival
-
1998
- 1998-07-14 HK HK98109120A patent/HK1008264A1/xx not_active IP Right Cessation
- 1998-09-11 US US09/151,277 patent/US6043513A/en not_active Expired - Lifetime
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5477286B2 (ja) * | 2008-04-15 | 2014-04-23 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JPWO2009128419A1 (ja) * | 2008-04-15 | 2011-08-04 | 住友電気工業株式会社 | 半導体装置 |
JPWO2009128382A1 (ja) * | 2008-04-15 | 2011-08-04 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP5522035B2 (ja) * | 2008-04-15 | 2014-06-18 | 住友電気工業株式会社 | 半導体装置 |
WO2010134415A1 (ja) * | 2009-05-22 | 2010-11-25 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
WO2011043120A1 (ja) * | 2009-10-05 | 2011-04-14 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP2011082254A (ja) * | 2009-10-05 | 2011-04-21 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
US8846531B2 (en) | 2009-10-05 | 2014-09-30 | Sumitomo Electric Industries, Ltd. | Method of manufacturing an ohmic electrode containing titanium, aluminum and silicon on a silicon carbide surface |
WO2014027518A1 (ja) * | 2012-08-13 | 2014-02-20 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
US8716129B2 (en) | 2012-08-13 | 2014-05-06 | Sumitomo Electric Industries, Ltd. | Method for manufacturing silicon carbide semiconductor device |
JP2014038900A (ja) * | 2012-08-13 | 2014-02-27 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置の製造方法 |
US8847237B2 (en) | 2012-08-13 | 2014-09-30 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method for manufacturing same |
WO2014027519A1 (ja) * | 2012-08-13 | 2014-02-20 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
FI973555A (fi) | 1997-08-29 |
FI973555A0 (fi) | 1997-08-29 |
WO1996022611A1 (en) | 1996-07-25 |
DE69613674D1 (de) | 2001-08-09 |
SE9500152L (sv) | 1996-07-19 |
SE9500152D0 (sv) | 1995-01-18 |
KR100406247B1 (ko) | 2004-03-18 |
CN1088256C (zh) | 2002-07-24 |
DE69613674T2 (de) | 2002-04-25 |
EP0804802A1 (en) | 1997-11-05 |
CA2210222A1 (en) | 1996-07-25 |
JP3930561B2 (ja) | 2007-06-13 |
US5877077A (en) | 1999-03-02 |
CN1172551A (zh) | 1998-02-04 |
EP0804802B1 (en) | 2001-07-04 |
HK1008264A1 (en) | 1999-05-07 |
ES2160799T3 (es) | 2001-11-16 |
AU4499596A (en) | 1996-08-07 |
SE504916C2 (sv) | 1997-05-26 |
US6043513A (en) | 2000-03-28 |
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