JPH1032119A - Magnetoresistance effect film - Google Patents
Magnetoresistance effect filmInfo
- Publication number
- JPH1032119A JPH1032119A JP8187589A JP18758996A JPH1032119A JP H1032119 A JPH1032119 A JP H1032119A JP 8187589 A JP8187589 A JP 8187589A JP 18758996 A JP18758996 A JP 18758996A JP H1032119 A JPH1032119 A JP H1032119A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ferromagnetic
- laminated
- film
- nicoo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁気抵抗効果膜に
関するものであり、特にスピンバルブ構造を有する磁気
抵抗効果膜に関するものである。The present invention relates to a magnetoresistive film, and more particularly to a magnetoresistive film having a spin valve structure.
【０００２】[0002]
【従来の技術】磁気抵抗効果素子（ＭＲ素子）は、磁場
印加による磁気抵抗効果膜の電気抵抗の変化を検出する
ことにより、磁界強度及びその変化を測定するための素
子である。このような磁気抵抗効果素子を組み込んだ再
生ヘッド（ＭＲヘッド）は、従来の誘導型ヘッドに比べ
磁気感度が高いので、ハード・ディスク装置の再生ヘッ
ドとして検討されている。このようなＭＲヘッドの感度
を高めることにより、ハード・ディスク装置の面記録密
度を向上させることが可能になる。従って、感度に対応
するＭＲ比の高い磁気抵抗効果膜の開発が近年盛んに進
められている。2. Description of the Related Art A magnetoresistive element (MR element) is an element for measuring a magnetic field strength and its change by detecting a change in electric resistance of a magnetoresistive film due to application of a magnetic field. A reproducing head (MR head) incorporating such a magnetoresistive element has been studied as a reproducing head for a hard disk drive because it has higher magnetic sensitivity than a conventional inductive head. By increasing the sensitivity of such an MR head, it is possible to improve the areal recording density of a hard disk drive. Therefore, development of a magnetoresistive film having a high MR ratio corresponding to sensitivity has been actively pursued in recent years.
【０００３】大きなＭＲ比を示す素子として、巨大磁気
抵抗素子（ＧＭＲ素子）が知られており、このようなＧ
ＭＲ素子の１つの構造として、反強磁性層／強磁性層／
非磁性導電層／強磁性層からなる積層構造を有するスピ
ンバルブ膜が知られている。このようなスピンバルブ膜
において、ＮｉＯ／ＣｏＯの積層膜を反強磁性層として
用いた、ＮｉＯ／ＣｏＯ／Ｎｉ−Ｆｅ／Ｃｏ／Ｃｕ／Ｃ
ｏ／Ｎｉ−Ｆｅの積層膜がＭＲ比約１１％を示すことが
報告されている（日経エレクトロニクス１９９６年２月
１２日号（No. ６５５）第１６頁）。このスピンバルブ
膜は、従来反強磁性層として一般的に用いられていたＦ
ｅ−Ｍｎに代えて、ＮｉＯとＣｏＯの積層膜を用いてい
るため、耐腐食性が向上し、また反強磁性層が酸化物層
であるので、より多くの電流を強磁性層／非磁性導電層
／強磁性層に流すことができ、感度を高めることができ
るとされている。A giant magnetoresistive element (GMR element) is known as an element exhibiting a large MR ratio.
As one structure of the MR element, an antiferromagnetic layer / ferromagnetic layer /
2. Description of the Related Art A spin valve film having a laminated structure of a nonmagnetic conductive layer / a ferromagnetic layer has been known. In such a spin valve film, a NiO / CoO / Ni-Fe / Co / Cu / C film using a NiO / CoO laminated film as an antiferromagnetic layer is used.
It has been reported that a laminated film of o / Ni-Fe exhibits an MR ratio of about 11% (Nikkei Electronics, February 12, 1996, No. 655, p. 16). This spin-valve film is formed of F
Since a laminated film of NiO and CoO is used instead of e-Mn, corrosion resistance is improved, and since the antiferromagnetic layer is an oxide layer, more current is supplied to the ferromagnetic layer / nonmagnetic layer. It is said that it can be passed through the conductive layer / ferromagnetic layer and the sensitivity can be increased.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、磁気記
録の分野においては、さらに高密度化が望まれており、
このような観点から、より高いＭＲ比を示すＭＲ素子の
開発が望まれている。However, in the field of magnetic recording, higher densification is desired.
From such a viewpoint, development of an MR element exhibiting a higher MR ratio is desired.
【０００５】本発明の目的は、より高いＭＲ比を示す磁
気抵抗効果膜を提供することにある。An object of the present invention is to provide a magnetoresistive film exhibiting a higher MR ratio.
【０００６】[0006]
【課題を解決するための手段】本発明に従う第１の局面
の磁気抵抗効果膜は、反強磁性層、強磁性層、非磁性導
電層及び強磁性層をこの順序で備える磁気抵抗効果膜で
あり、反強磁性層がＮｉＯ層とＮｉＣｏＯ層の積層膜で
あり、ＮｉＣｏＯ層が前記強磁性層側に設けられている
ことを特徴としている。According to a first aspect of the present invention, there is provided a magnetoresistive film including an antiferromagnetic layer, a ferromagnetic layer, a nonmagnetic conductive layer, and a ferromagnetic layer in this order. The antiferromagnetic layer is a laminated film of a NiO layer and a NiCoO layer, and the NiCoO layer is provided on the ferromagnetic layer side.
【０００７】ＮｉＯ層の膜厚としては、一般に２０〜６
０ｎｍ程度であり、ＮｉＣｏＯ層の膜厚としては、０．
５〜２ｎｍ程度である。本発明に従う第２の局面の磁気
抵抗効果膜は、反強磁性層、強磁性層、非磁性導電層及
び強磁性層をこの順序で備える磁気抵抗効果膜であり、
反強磁性層がＮｉＣｏＯ層であることを特徴としてい
る。The thickness of the NiO layer is generally 20 to 6
The thickness of the NiCoO layer is about 0 nm.
It is about 5 to 2 nm. A magnetoresistive film according to a second aspect of the present invention is a magnetoresistive film including an antiferromagnetic layer, a ferromagnetic layer, a nonmagnetic conductive layer, and a ferromagnetic layer in this order,
It is characterized in that the antiferromagnetic layer is a NiCoO layer.
【０００８】ＮｉＣｏＯ層の膜厚としては、一般に２０
〜６０ｎｍ程度である。本発明において用いられる強磁
性層は、キュリー温度が素子使用温度を超えた温度であ
る強磁性体から形成された層であれば特に限定されるも
のではない。具体的には、ＮｉＦｅ層とＣｏ層の積層膜
や、ＮｉＦｅ層、Ｃｏ層、これらの合金等からなる強磁
性層などが挙げられる。強磁性層の膜厚は、一般に、１
〜１０ｎｍ程度である。The thickness of the NiCoO layer is generally 20
〜60 nm. The ferromagnetic layer used in the present invention is not particularly limited as long as it is a layer formed of a ferromagnetic material whose Curie temperature is higher than the device operating temperature. Specific examples include a laminated film of a NiFe layer and a Co layer, a NiFe layer, a Co layer, and a ferromagnetic layer made of an alloy thereof. Generally, the thickness of the ferromagnetic layer is 1
About 10 nm.
【０００９】本発明において用いられる非磁性導電層と
しては、少なくとも室温において非磁性であり、導電性
に優れたものであれば特に限定されるものではなく、例
えばＣｕ層、Ａｇ層などが用いられる。非磁性導電層の
厚みとしては、一般的には、１〜５ｎｍ程度である。The nonmagnetic conductive layer used in the present invention is not particularly limited as long as it is nonmagnetic at least at room temperature and has excellent conductivity. For example, a Cu layer, an Ag layer, etc. are used. . The thickness of the nonmagnetic conductive layer is generally about 1 to 5 nm.
【００１０】本発明の磁気抵抗効果膜は、一般に基板上
に形成されるが、基板の材質は非磁性であれば特に限定
されるものではなく、例えば、Ｓｉ、ＴｉＣ、Ａｌ2 Ｏ
3 、ガラスなどの基板が用いられる。The magnetoresistive film of the present invention is generally formed on a substrate, but the material of the substrate is not particularly limited as long as it is non-magnetic. For example, Si, TiC, Al 2 O
3. A substrate such as glass is used.
【００１１】[0011]
【発明の実施の形態】実施例１ 図１に示すような、本発明の第１の局面に従う磁気抵抗
効果膜を作製した。図１を参照して、ガラス基板１の上
に、ＮｉＯ層２、及びＮｉＣｏＯ層３が積層されてい
る。これらのＮｉＯ層２及びＮｉＣｏＯ層３により、反
強磁性層が構成されている。このような反強磁性層の上
に、ＮｉＦｅ層４、及びＣｏ層５が積層されている。こ
れらのＮｉＦｅ層４及びＣｏ層５により強磁性層が構成
されている。このような強磁性層の上に、非磁性導電層
としてのＣｕ層６が積層されている。Ｃｕ層６の上に、
強磁性層であるＣｏ層７及びＮｉＦｅ層８が積層されて
いる。DETAILED DESCRIPTION OF THE INVENTION, as shown in Example 1 1, was produced magnetoresistive film according to the first aspect of the present invention. Referring to FIG. 1, a NiO layer 2 and a NiCoO layer 3 are laminated on a glass substrate 1. The NiO layer 2 and the NiCoO layer 3 constitute an antiferromagnetic layer. On such an antiferromagnetic layer, a NiFe layer 4 and a Co layer 5 are laminated. These NiFe layer 4 and Co layer 5 constitute a ferromagnetic layer. On such a ferromagnetic layer, a Cu layer 6 as a nonmagnetic conductive layer is laminated. On the Cu layer 6,
A Co layer 7 and a NiFe layer 8, which are ferromagnetic layers, are stacked.
【００１２】図２及び図３は、図１に示す実施例１の磁
気抵抗効果膜を製造する工程を示す断面図である。図２
（ａ）に示すように、ガラス基板１上にイオンビームス
パッタリング法により、Ｎｉ50Ｏ50の組成のＮｉＯ層２
（膜厚５０ｎｍ）を形成する。次に、図２（ｂ）に示す
ように、ＮｉＯ層２の上に、イオンビームスパッタリン
グ法により、（Ｎｉ0.5 Ｃｏ0.5 ）50Ｏ50の組成からな
るＮｉＣｏＯ層３（膜厚１ｎｍ）を積層する。次に、図
２（ｃ）に示すように、ＮｉＣｏＯ層３の上に、Ｎｉ80
Ｆｅ20の組成からなるＮｉＦｅ層４（膜厚６ｎｍ）をイ
オンビームスパッタリング法により積層する。FIGS. 2 and 3 are sectional views showing steps of manufacturing the magnetoresistive film of the first embodiment shown in FIG. FIG.
As shown in (a), a NiO layer 2 having a composition of Ni 50 O 50 is formed on a glass substrate 1 by an ion beam sputtering method.
(Film thickness 50 nm). Next, as shown in FIG. 2B, a NiCoO layer 3 (1 nm thick) having a composition of (Ni 0.5 Co 0.5 ) 50 O 50 is laminated on the NiO layer 2 by an ion beam sputtering method. . Next, as shown in FIG. 2C, Ni 80
A NiFe layer 4 (thickness: 6 nm) having a composition of Fe 20 is laminated by an ion beam sputtering method.
【００１３】次に、図３（ｄ）〜（ｆ）に示すように、
Ｃｏ層５（膜厚０．３ｎｍ）、Ｃｕ層６（膜厚２．５ｎ
ｍ）、及びＣｏ層７（膜厚０．３ｎｍ）をイオンビーム
スパッタリング法により順次積層する。Next, as shown in FIGS. 3 (d) to 3 (f),
Co layer 5 (thickness 0.3 nm), Cu layer 6 (thickness 2.5 n)
m) and a Co layer 7 (thickness 0.3 nm) are sequentially laminated by an ion beam sputtering method.
【００１４】最後に、図１に示すように、Ｃｏ層７の上
に、Ｎｉ80Ｆｅ20の組成のＮｉＦｅ層８（膜厚６ｎｍ）
をイオンビームスパッタリング法により積層する。図４
は、以上のようにして得られた図１に示す本発明に従う
磁気抵抗効果膜の外部磁界の変化に対するＭＲ比の変化
を示す図である。は、上記実施例１の磁気抵抗効果膜
のＭＲ比の変化を示している。は、比較の磁気抵抗効
果膜のＭＲ比の変化を示しており、反強磁性層としてＮ
ｉＯ層（膜厚５０ｎｍ）／ＣｏＯ層（膜厚１ｎｍ）の積
層膜を用い、その他の強磁性層、非磁性導電層及び強磁
性層の構造は実施例１と同じである磁気抵抗効果膜（比
較例１）のＭＲ比の変化を示している。または、同じ
く比較の磁気抵抗効果膜のＭＲ比の変化を示しており、
反強磁性層としてＮｉＯ層（膜厚５０ｎｍ）のみを用
い、その他の強磁性層、非磁性導電層及び強磁性層の構
造は実施例１と同じである磁気抵抗効果膜（比較例２）
のＭＲ比の変化を示している。Finally, as shown in FIG. 1, a NiFe layer 8 having a composition of Ni 80 Fe 20 (6 nm thick) is formed on the Co layer 7.
Are laminated by an ion beam sputtering method. FIG.
FIG. 3 is a diagram showing a change in an MR ratio with respect to a change in an external magnetic field of the magnetoresistive effect film according to the present invention shown in FIG. 1 and obtained as described above. Shows the change in the MR ratio of the magnetoresistive film of the first embodiment. Indicates the change in the MR ratio of the comparative magnetoresistive film, and N represents an antiferromagnetic layer.
A laminated film of an iO layer (thickness: 50 nm) / CoO layer (thickness: 1 nm) is used, and the structures of the other ferromagnetic layers, nonmagnetic conductive layers, and ferromagnetic layers are the same as in the first embodiment. 9 shows the change in the MR ratio of Comparative Example 1). Or, it also shows the change in the MR ratio of the comparative magnetoresistive film,
A magnetoresistive film (Comparative Example 2) in which only the NiO layer (50 nm thick) is used as the antiferromagnetic layer, and the structures of the other ferromagnetic layers, nonmagnetic conductive layers, and ferromagnetic layers are the same as those in Example 1.
Shows the change in the MR ratio.
【００１５】図４から明らかなように、本発明に従う実
施例１の磁気抵抗効果膜は最大のＭＲ比として１８％の
値を示しており、従来よりも高いＭＲ比を示すことがわ
かる。As is apparent from FIG. 4, the magnetoresistive film of Example 1 according to the present invention has a maximum MR ratio of 18%, which indicates that the MR ratio is higher than that of the prior art.
【００１６】実施例２ 本発明の第２の局面に従う磁気抵抗効果膜として、図５
に示すような構造を有する磁気抵抗効果膜を作製した。
図５に示すように、ガラス基板１上にＮｉＣｏＯ層３を
積層し、この上に順次ＮｉＦｅ層４、Ｃｏ層５、Ｃｕ層
６、Ｃｏ層７、及びＮｉＦｅ層８をイオンビームスパッ
タリング法により形成し積層した。なお、各層の組成及
び膜厚は、図１に示す実施例１と同様である。 Embodiment 2 As a magnetoresistive film according to a second aspect of the present invention, FIG.
A magnetoresistive film having the structure shown in FIG.
As shown in FIG. 5, a NiCoO layer 3 is laminated on a glass substrate 1, and a NiFe layer 4, a Co layer 5, a Cu layer 6, a Co layer 7, and a NiFe layer 8 are sequentially formed thereon by an ion beam sputtering method. And laminated. Note that the composition and thickness of each layer are the same as those in Example 1 shown in FIG.
【００１７】図６は、図５に示す実施例２の磁気抵抗効
果膜の外部磁界の変化に対するＭＲ比の変化を示す図で
ある。は、実施例２のＭＲ比の変化を示しており、
及びは、それぞれ図４に示す及びと同様である。
図６に示すように、本発明に従う実施例２の磁気抵抗効
果膜も、最大ＭＲ比として１６％の値を示しており、従
来よりも高いＭＲ比を示すことがわかる。FIG. 6 is a diagram showing a change in the MR ratio with respect to a change in the external magnetic field of the magnetoresistive film of the second embodiment shown in FIG. Indicates a change in the MR ratio of Example 2.
And are the same as those shown in FIG.
As shown in FIG. 6, the magnetoresistive effect film of Example 2 according to the present invention also shows a value of 16% as the maximum MR ratio, which indicates that the MR ratio is higher than that of the related art.
【００１８】本発明に従う磁気抵抗効果膜が、従来より
高いＭＲ比を示す詳細な理由については明らかでない
が、従来の磁気抵抗効果膜で反強磁性層に用いられてい
るＣｏＯは、そのネール点が２８９Ｋ（約１６℃）であ
り、これより高い室温で十分な反強磁性を示しにくいの
に対し、本発明において反強磁性層に用いているＮｉＣ
ｏＯのネール点は３７８Ｋ（約１０５℃）であるため、
室温においても十分な反強磁性を示し、ネール点が５０
７Ｋ（約２３４℃）であるＮｉＯと同様に十分なピン止
め効果を発揮し、その結果として高いＭＲ比を示すもの
と考えられる。Although the detailed reason why the magnetoresistive film according to the present invention exhibits a higher MR ratio than the conventional one is not clear, CoO used for the antiferromagnetic layer in the conventional magnetoresistive effect film has its Neel point. Is 289K (about 16 ° C.), and it is difficult to exhibit sufficient antiferromagnetism at room temperature higher than 289K (about 16 ° C.).
Since the Neel point of oO is 378K (about 105 ° C),
It shows sufficient antiferromagnetism even at room temperature and has a Neel point of 50
It is considered that a sufficient pinning effect is exhibited similarly to NiO at 7K (about 234 ° C.), and as a result, a high MR ratio is exhibited.
【００１９】また、本発明の第１の局面では、ＮｉＯの
上に直接ＮｉＦｅなどの強磁性層を積層する場合に比
べ、ＮｉＣｏＯ層を介在させることにより、格子整合性
がよくなり、積層膜の結晶性が改善され、高いＭＲ比が
得られるものと考えられる。Further, in the first aspect of the present invention, the lattice matching is improved by interposing the NiCoO layer as compared with the case where a ferromagnetic layer such as NiFe is directly laminated on NiO, so that It is considered that the crystallinity is improved and a high MR ratio is obtained.
【００２０】本発明の磁気抵抗効果膜は、上記実施例１
及び２の組成及び膜厚等に限定されるものではない。ま
た本発明における反強磁性層は、強磁性層に対しピン止
め効果を発揮し得る反強磁性を示す組成及び膜厚等であ
れば、上記実施例１及び２の組成及び膜厚等に限定され
るものではない。The magnetoresistive film of the present invention is similar to that of the first embodiment.
And 2 are not limited to the composition and film thickness. The antiferromagnetic layer of the present invention is not limited to the composition and thickness of Examples 1 and 2 as long as the composition and the thickness show antiferromagnetism capable of exhibiting a pinning effect on the ferromagnetic layer. It is not something to be done.
【００２１】[0021]
【発明の効果】本発明に従う磁気抵抗効果膜は、従来よ
り高いＭＲ比を示すものであり、例えばＭＲヘッドに用
いることにより、ヘッドの再生出力を高めることがで
き、従来よりも高い記録密度を実現することができる。The magnetoresistive film according to the present invention exhibits a higher MR ratio than conventional ones. For example, when used in an MR head, the read output of the head can be increased, and a higher recording density than the conventional one can be obtained. Can be realized.
【図１】本発明の第１の局面に従う実施例の磁気抵抗効
果膜を示す断面図。FIG. 1 is a sectional view showing a magnetoresistive film of an example according to a first aspect of the present invention.
【図２】図１に示す実施例を製造する工程を示す断面
図。FIG. 2 is a sectional view showing a step of manufacturing the embodiment shown in FIG. 1;
【図３】図１に示す実施例を製造する工程を示す断面
図。FIG. 3 is a sectional view showing a step of manufacturing the embodiment shown in FIG. 1;
【図４】図１に示す実施例の磁気抵抗効果膜の外部磁界
に対するＭＲ比の変化を示す図。4 is a diagram showing a change in an MR ratio of the magnetoresistive film of the embodiment shown in FIG. 1 with respect to an external magnetic field.
【図５】本発明の第２の局面に従う実施例の磁気抵抗効
果膜を示す断面図。FIG. 5 is a sectional view showing a magnetoresistive film of an example according to a second aspect of the present invention.
【図６】図５に示す実施例の磁気抵抗効果膜の外部磁界
に対するＭＲ比の変化を示す図。6 is a diagram showing a change in an MR ratio of the magnetoresistive film of the embodiment shown in FIG. 5 with respect to an external magnetic field.
１…ガラス基板 ２…ＮｉＯ層 ３…ＮｉＣｏＯ層 ４，８…ＮｉＦｅ層 ５，７…Ｃｏ層 ６…Ｃｕ層 DESCRIPTION OF SYMBOLS 1 ... Glass substrate 2 ... NiO layer 3 ... NiCoO layer 4,8 ... NiFe layer 5,7 ... Co layer 6 ... Cu layer
Claims (4)
び強磁性層をこの順序で備える磁気抵抗効果膜におい
て、 前記反強磁性層がＮｉＯ層とＮｉＣｏＯ層の積層膜であ
り、ＮｉＣｏＯ層が前記強磁性層側に設けられているこ
とを特徴とする磁気抵抗効果膜。1. A magnetoresistive film comprising an antiferromagnetic layer, a ferromagnetic layer, a nonmagnetic conductive layer and a ferromagnetic layer in this order, wherein the antiferromagnetic layer is a laminated film of a NiO layer and a NiCoO layer, A magnetoresistive film, wherein a NiCoO layer is provided on the ferromagnetic layer side.
び強磁性層をこの順序で備える磁気抵抗効果膜におい
て、 前記反強磁性層がＮｉＣｏＯ層であることを特徴とする
磁気抵抗効果膜。2. A magnetoresistive film comprising an antiferromagnetic layer, a ferromagnetic layer, a nonmagnetic conductive layer and a ferromagnetic layer in this order, wherein the antiferromagnetic layer is a NiCoO layer. Effect membrane.
層膜である請求項１または２に記載の磁気抵抗効果膜。3. The magnetoresistive film according to claim 1, wherein the ferromagnetic layer is a laminated film of a NiFe layer and a Co layer.
１〜３のいずれか１項に記載の磁気抵抗効果膜。4. The magnetoresistance effect film according to claim 1, wherein said nonmagnetic conductive layer is a Cu layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8187589A JPH1032119A (en) | 1996-07-17 | 1996-07-17 | Magnetoresistance effect film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8187589A JPH1032119A (en) | 1996-07-17 | 1996-07-17 | Magnetoresistance effect film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1032119A true JPH1032119A (en) | 1998-02-03 |
Family
ID=16208761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8187589A Pending JPH1032119A (en) | 1996-07-17 | 1996-07-17 | Magnetoresistance effect film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1032119A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6178073B1 (en) | 1997-12-01 | 2001-01-23 | Nec Corporation | Magneto-resistance effect element with a fixing layer formed from a superlattice of at least two different materials and production method of the same |
| US6295187B1 (en) | 1999-06-29 | 2001-09-25 | International Business Machines Corporation | Spin valve sensor with stable antiparallel pinned layer structure exchange coupled to a nickel oxide pinning layer |
| US6836392B2 (en) * | 2001-04-24 | 2004-12-28 | Hitachi Global Storage Technologies Netherlands, B.V. | Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems |
-
1996
- 1996-07-17 JP JP8187589A patent/JPH1032119A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6178073B1 (en) | 1997-12-01 | 2001-01-23 | Nec Corporation | Magneto-resistance effect element with a fixing layer formed from a superlattice of at least two different materials and production method of the same |
| US6295187B1 (en) | 1999-06-29 | 2001-09-25 | International Business Machines Corporation | Spin valve sensor with stable antiparallel pinned layer structure exchange coupled to a nickel oxide pinning layer |
| US6751844B2 (en) | 1999-06-29 | 2004-06-22 | International Business Machines Corporation | Method of making a spin valve sensor with stable antiparallel pinned layer structure exchange coupled to a nickel oxide pinning layer |
| US6836392B2 (en) * | 2001-04-24 | 2004-12-28 | Hitachi Global Storage Technologies Netherlands, B.V. | Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems |
| US6992866B2 (en) | 2001-04-24 | 2006-01-31 | Hitachi Global Storage Technologies Netherlands B.V. | Exchange-coupled magnetoresistive sensor with a coercive ferrite layer and an oxide underlayer having a spinal lattice structure |
| US7116532B2 (en) | 2001-04-24 | 2006-10-03 | Hitachi Global Storage Technologies Netherlands B.V. | Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4421822B2 (en) | Bottom spin valve magnetoresistive sensor element and manufacturing method thereof | |
| KR100288466B1 (en) | Magnetoresistive element, magnetoresistive head, memory element and amplification element using the same | |
| JP3447468B2 (en) | Magnetoresistive element, method of manufacturing the same, and magnetic head using the same | |
| JP2778626B2 (en) | Magnetoresistance effect film, method of manufacturing the same, and magnetoresistance effect element | |
| JP3291208B2 (en) | Magnetoresistive sensor, method of manufacturing the same, and magnetic head equipped with the sensor | |
| US6258470B1 (en) | Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film | |
| JP3137580B2 (en) | Magnetic multilayer film, magnetoresistive element and magnetic transducer | |
| US6282069B1 (en) | Magnetoresistive element having a first antiferromagnetic layer contacting a pinned magnetic layer and a second antiferromagnetic layer contacting a free magnetic layer | |
| KR100249976B1 (en) | Magnetoresistive device and the method | |
| EP0814519B1 (en) | Magnetoresistive effect device, process for fabricating the same, and magnetic head produced using the same | |
| JP2000340858A (en) | Magnetoresistive effect film and magnetoresistive effect head | |
| JPH11296823A (en) | Magnetoresistance element and its production as well as magnetoresistance sensor and magnetic recording system | |
| JPH1041132A (en) | Magnetic resistance effect film | |
| KR20060101139A (en) | Magnetoresistive element, magnetic head, and magnetic memory apparatus | |
| KR100304770B1 (en) | Magnetoresistive effect film and method of manufacture thereof | |
| US6765769B2 (en) | Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head | |
| JPH10188235A (en) | Magneto-resistive film and its production | |
| JP2924819B2 (en) | Magnetoresistive film and method of manufacturing the same | |
| JP3420152B2 (en) | Magnetoresistive head and magnetic recording / reproducing device | |
| JP3137288B2 (en) | Exchange coupling film, magnetoresistive element, magnetoresistive head, and method of manufacturing magnetoresistive element | |
| JPH1032119A (en) | Magnetoresistance effect film | |
| JPH1091921A (en) | Dual spin bulb-type thin film magnetic head | |
| JP2000020926A (en) | Magnetoresistance effect head | |
| JPH10270776A (en) | Method for manufacturing magnetoresistance effect film | |
| JP3675327B2 (en) | Magnetoresistive sensor, thin film magnetic head provided with the sensor, method for manufacturing the sensor, and method for manufacturing the head |