JPH10311937A - Packaging structure of end face light emitting element or light receiving element - Google Patents
Packaging structure of end face light emitting element or light receiving elementInfo
- Publication number
- JPH10311937A JPH10311937A JP9124224A JP12422497A JPH10311937A JP H10311937 A JPH10311937 A JP H10311937A JP 9124224 A JP9124224 A JP 9124224A JP 12422497 A JP12422497 A JP 12422497A JP H10311937 A JPH10311937 A JP H10311937A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- receiving element
- emitting element
- light emitting
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Optical Couplings Of Light Guides (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、端面発光素子或
は受光素子の実装構造に関し、特に、端面発光素子或は
受光素子を基板に対して高さ方向を高精度に実装する端
面発光素子或は受光素子の実装構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting structure of an end face light emitting element or a light receiving element, and more particularly, to an end face light emitting element or a light receiving element for mounting the end face light emitting element or the light receiving element with respect to a substrate with high accuracy in a height direction. Relates to the mounting structure of the light receiving element.
【０００２】[0002]
【従来の技術】従来例を図６および図７を参照して説明
する。図６および図７において、１は半導体基板である
シリコン基板を示す。１１はシリコン基板１表面にエッ
チング加工により形成されたＶ字状溝１１である。４は
Ｖ字状溝１１に嵌合取り付けられる光ファイバである。
１２はＶ字状溝１１に対応してシリコン基板１に形成さ
れる基板電極である。２はハンダ薄膜を示す。３はシリ
コン基板１に実装されるべき端面発光素子或は受光素子
３である。３１は端面発光素子或は受光素子３の下面に
形成される下側素子電極であり、３２は上面に形成され
る上側素子電極である。2. Description of the Related Art A conventional example will be described with reference to FIGS. 6 and 7, reference numeral 1 denotes a silicon substrate which is a semiconductor substrate. Reference numeral 11 denotes a V-shaped groove 11 formed on the surface of the silicon substrate 1 by etching. Reference numeral 4 denotes an optical fiber fitted and attached to the V-shaped groove 11.
Reference numeral 12 denotes a substrate electrode formed on the silicon substrate 1 corresponding to the V-shaped groove 11. Reference numeral 2 denotes a solder thin film. Reference numeral 3 denotes an edge light emitting element or light receiving element 3 to be mounted on the silicon substrate 1. Reference numeral 31 denotes a lower element electrode formed on the lower surface of the edge light emitting element or the light receiving element 3, and 32 denotes an upper element electrode formed on the upper surface.
【０００３】端面発光素子或は受光素子３および光ファ
イバ４をシリコン基板１に実装取り付けて光を放射し或
は受光する光学装置を組み立てる順序について簡単に説
明するに、先ず、シリコン基板１を準備し、これにエッ
チング加工を施して表面にＶ字状溝１１を形成する。次
いで、端面発光素子或は受光素子３を実装する基板電極
１２をＶ字状溝１１に対応してシリコン基板１表面に形
成する。シリコン基板１表面に基板電極１２を形成する
に際して、端子電極１３も同時にシリコン基板１表面に
形成しておく。そして、光ファイバ４を接着剤を適用し
てＶ字状溝１１に嵌合取り付ける。ここで、端面発光素
子或は受光素子３を準備し、下側素子電極３１或は基板
電極１２の何れか一方にハンダ薄膜２を付与しておき、
端面発光素子或は受光素子３を基板電極１２に実装す
る。In order to briefly describe an order of assembling an optical device that emits or receives light by mounting and mounting an edge emitting element or light receiving element 3 and an optical fiber 4 on a silicon substrate 1, first, the silicon substrate 1 is prepared. Then, this is subjected to etching to form a V-shaped groove 11 on the surface. Next, a substrate electrode 12 on which the end face light emitting element or the light receiving element 3 is mounted is formed on the surface of the silicon substrate 1 corresponding to the V-shaped groove 11. When the substrate electrode 12 is formed on the surface of the silicon substrate 1, the terminal electrode 13 is also formed on the surface of the silicon substrate 1 at the same time. Then, the optical fiber 4 is fitted and attached to the V-shaped groove 11 by applying an adhesive. Here, the end face light emitting element or the light receiving element 3 is prepared, and the solder thin film 2 is applied to one of the lower element electrode 31 and the substrate electrode 12.
The edge emitting element or the light receiving element 3 is mounted on the substrate electrode 12.
【０００４】以上の光学装置において、光ファイバ４先
端部と端面発光素子或は受光素子３の端面との間をパッ
シブアライメント、即ち、無調芯固定して両者の間の効
率的な光結合を実現するには、光ファイバ４をＶ字状溝
１１に嵌合取り付けた状態において、端面発光素子或い
は受光素子３をシリコン基板１に形成した基板電極１２
に対して光ファイバ４と高精度に整列して実装すること
が要請される。In the above optical device, passive alignment between the tip of the optical fiber 4 and the end face of the end face light emitting element or the light receiving element 3, that is, non-alignment fixation, and efficient optical coupling between the two. In order to realize this, in a state where the optical fiber 4 is fitted and attached to the V-shaped groove 11, the substrate electrode 12 in which the end face light emitting element or the light receiving element 3 is formed on the silicon substrate 1.
It is required to mount the optical fiber 4 with high precision.
【０００５】[0005]
【発明が解決しようとする課題】端面発光素子或は受光
素子３は、以上の通りにして基板電極１２に対して位置
決めし、シリコン基板１に実装するのであるが、端面発
光素子或は受光素子３のシリコン基板１表面の水平方向
であるｘ、ｚ方向に関する位置決め調整は画像処理技術
を採用することにより比較的容易に実施することができ
る。フリップ・チップ・ボンダの如き高精度実装機を使
用することにより充分に高精度な実装をすることができ
る。しかし、この高精度実装機は端面発光素子或は受光
素子３をシリコン基板１表面に実装する場合、実装の高
さを加重により制御するものであるので、シリコン基板
１の表面の垂直方向であるｙ方向に関しては、高精度の
実装を保証することは困難である。と言うのは、ハンダ
薄膜２は実装時に加熱溶融するところから、端面発光素
子或は受光素子３の高さはハンダ薄膜２の厚さの変動分
だけ変化し、高精度の実装高さは得られない。The edge light emitting element or light receiving element 3 is positioned with respect to the substrate electrode 12 and mounted on the silicon substrate 1 as described above. The positioning adjustment in the horizontal x and z directions of the surface of the silicon substrate 1 can be performed relatively easily by employing an image processing technique. By using a high-precision mounting machine such as a flip chip bonder, sufficiently high-precision mounting can be performed. However, when the edge light emitting element or the light receiving element 3 is mounted on the surface of the silicon substrate 1 in this high-precision mounting machine, the height of the mounting is controlled by weight. As for the y direction, it is difficult to guarantee high-precision mounting. That is, since the solder thin film 2 is heated and melted at the time of mounting, the height of the end face light emitting element or the light receiving element 3 changes by an amount corresponding to the variation of the thickness of the solder thin film 2, and the mounting height with high precision is obtained. I can't.
【０００６】この発明は、上述の問題を解消した端面発
光素子或は受光素子の実装構造を提供するものである。The present invention provides a mounting structure of an edge light emitting element or a light receiving element which solves the above-mentioned problem.
【０００７】[0007]
請求項１：光ファイバ４を取り付けるＶ字状溝１１が形
成されると共にＶ字状溝１１に対応して端面発光素子或
は受光素子３をハンダにより実装する基板電極１２が形
成される半導体基板１を具備する端面発光素子或は受光
素子の実装構造において、基板電極１２表面に金属膜１
４を形成した端面発光素子或は受光素子の実装構造を構
成した。A semiconductor substrate in which a V-shaped groove 11 for mounting the optical fiber 4 is formed and a substrate electrode 12 for mounting the end face light emitting element or the light receiving element 3 by solder corresponding to the V-shaped groove 11 is formed. In the mounting structure of the end face light emitting element or the light receiving element provided with
4 to form a mounting structure of the end face light emitting element or the light receiving element.
【０００８】そして、請求項２：請求項１に記載される
端面発光素子或は受光素子の実装構造において、金属膜
１４は一定膜厚のストライプ状の金属膜である端面発光
素子或は受光素子の実装構造を構成した。 また、請求項３：請求項１に記載される端面発光素子或
は受光素子の実装構造において、金属膜１４は一定膜厚
の円板状の金属膜である端面発光素子或は受光素子の実
装構造を構成した。Claim 2: In the mounting structure of the end face light emitting element or the light receiving element according to the first aspect, the metal film 14 is a striped metal film having a constant thickness. The mounting structure was constructed. Further, in the mounting structure of the end face light emitting element or the light receiving element according to claim 1, the mounting of the end face light emitting element or the light receiving element in which the metal film 14 is a disk-shaped metal film having a constant thickness. Structured.
【０００９】更に、請求項４：請求項１ないし請求項３
に記載される端面発光素子或は受光素子の実装構造にお
いて、金属膜１４はハンダに濡れ、ハンダ食われの少な
い金属材料より成るものである端面発光素子或は受光素
子の実装構造を構成した。 ここで、請求項５：請求項４に記載される端面発光素子
或は受光素子の実装構造において、金属材料はＮｉ、Ｃ
ｕ、Ｐｔの内から選択された何れかである端面発光素子
或は受光素子の実装構造を構成した。Further, claim 4: claims 1 to 3
In the mounting structure of the end face light emitting element or the light receiving element described in (1), the metal film 14 is made of a metal material which is less wetted by solder and less eroded by solder. Here, in the mounting structure of the edge light emitting element or the light receiving element according to claim 5, the metal material is Ni, C
A mounting structure of an end face light emitting element or a light receiving element selected from u and Pt was formed.
【００１０】そして、請求項６：請求項１ないし請求項
５に記載される端面発光素子或は受光素子の実装構造に
おいて、基板電極１２側或は端面発光素子或は受光素子
３側の何れか一方の側にハンダ薄膜２を予め付与した端
面発光素子或は受光素子の実装構造を構成した。Claim 6: In the mounting structure of the end face light emitting element or the light receiving element according to any one of the first to fifth aspects, any one of the substrate electrode 12 side or the end face light emitting element or the light receiving element 3 side. A mounting structure of an edge emitting element or a light receiving element in which a solder thin film 2 was previously applied to one side was formed.
【００１１】[0011]
【発明の実施の形態】この発明の実施の形態を図１ない
し図５を参照して説明する。図１を参照するに、端面発
光素子或は受光素子３および光ファイバ４をシリコン基
板１に実装取り付けて光を放射し或は受光する光学装置
を組み立てる順序について簡単に説明するに、先ず、シ
リコン基板１を準備し、これにエッチング加工を施して
表面にＶ字状溝１１を形成する。次いで、端面発光素子
或は受光素子３を実装する基板電極１２をＶ字状溝１１
に対応してシリコン基板１表面に形成する。シリコン基
板１表面に基板電極１２を形成するに際して、端子電極
１３も同時にシリコン基板１表面に形成しておく。図２
および図４を参照するに、この発明は、Ｖ字状溝１１に
対応して形成される基板電極１２表面に、更に一定膜厚
のストライプ状の金属膜１４を形成する。このストライ
プ状の金属膜１４は、ハンダが溶融しても溶融しない高
融点の金属材料を蒸着、スパッタリング、メッキその他
の薄膜成膜技術により高精度に膜厚制御しながら成膜す
る。金属膜１４を形成する金属材料としては、Ｎｉ、Ｃ
ｕ、Ｐｔその他のハンダに濡れ、ハンダ食われの少ない
金属材料を使用する。金属膜１４はこれを図３に示され
る通りの円板状の金属膜とすることができる。そして、
光ファイバ４を接着剤を適用してＶ字状溝１１に嵌合取
り付ける。次いで、端面発光素子或は受光素子３を準備
し、下側素子電極３１或は基板電極１２の何れか一方に
ハンダ薄膜２を予め付与しておく。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. Referring to FIG. 1, the order of assembling an optical device for emitting or receiving light by mounting and mounting an end face light emitting element or light receiving element 3 and an optical fiber 4 on a silicon substrate 1 will be described first. A substrate 1 is prepared and subjected to an etching process to form a V-shaped groove 11 on the surface. Next, the substrate electrode 12 on which the end face light emitting element or the light receiving element 3 is mounted is inserted into the V-shaped groove 11.
Is formed on the surface of the silicon substrate 1. When the substrate electrode 12 is formed on the surface of the silicon substrate 1, the terminal electrode 13 is also formed on the surface of the silicon substrate 1 at the same time. FIG.
Referring to FIG. 4 and FIG. 4, in the present invention, a stripe-shaped metal film 14 having a constant film thickness is further formed on the surface of substrate electrode 12 formed corresponding to V-shaped groove 11. The stripe-shaped metal film 14 is formed by depositing a high-melting metal material that does not melt even when the solder is melted, while controlling the film thickness with high precision by vapor deposition, sputtering, plating, or other thin film forming techniques. As a metal material for forming the metal film 14, Ni, C
u, Pt, and other metal materials that are wetted by solder and are less likely to be eroded by solder are used. The metal film 14 can be a disk-shaped metal film as shown in FIG. And
The optical fiber 4 is fitted and attached to the V-shaped groove 11 by applying an adhesive. Next, the end face light emitting element or the light receiving element 3 is prepared, and the solder thin film 2 is applied to one of the lower element electrode 31 and the substrate electrode 12 in advance.
【００１２】ここで、図５を参照するに、この図は端面
発光素子或は受光素子３を加熱し、ハンダ薄膜２を溶融
して基板電極１２に実装した後の状態を示している。即
ち、ハンダ薄膜２が溶融して端面発光素子或は受光素子
３とシリコン基板１との間は溶融後に固化したハンダ薄
膜２を介して接合している。この場合、ハンダ薄膜２が
その溶融により上方に存在する端面発光素子或は受光素
子３を下から支持する力を消失しても、基板電極１２と
端面発光素子或は受光素子３との間に両者間の間隔を保
持する金属膜１４が介在するところから、金属膜１４の
一定の厚さを保持した状態で接合がなされるに到る。Here, referring to FIG. 5, this figure shows a state after the edge light emitting element or the light receiving element 3 is heated, the solder thin film 2 is melted and mounted on the substrate electrode 12. That is, the solder thin film 2 is melted, and the end face light emitting element or light receiving element 3 and the silicon substrate 1 are joined via the solder thin film 2 solidified after melting. In this case, even if the solder thin film 2 loses the force of supporting the edge light emitting element or the light receiving element 3 located above due to the melting thereof, the gap between the substrate electrode 12 and the edge light emitting element or the light receiving element 3 is lost. From the place where the metal film 14 holding the space between them is interposed, the joining is performed with the metal film 14 kept at a certain thickness.
【００１３】[0013]
【発明の効果】以上の通りであって、この発明に依れ
ば、基板電極１２表面の一部に端面発光素子或は受光素
子３の実装時に加熱されても溶融しない高融点金属を形
成しておくことにより、端面発光素子或は受光素子３
は、これをシリコン基板１に加熱実装してハンダ薄膜２
が溶融しても、シリコン基板１との間に介在する金属膜
１４に突き当たり、これより下方に変位することは防止
される。As described above, according to the present invention, a high melting point metal which does not melt even when heated at the time of mounting the edge emitting element or the light receiving element 3 is formed on a part of the surface of the substrate electrode 12. In this case, the edge emitting element or the light receiving element 3
Is mounted on a silicon substrate 1 by heating and forming a solder thin film 2
Even if is melted, the metal film 14 is prevented from hitting the metal film 14 interposed between the silicon substrate 1 and being displaced below.
【００１４】ここで、この金属材料をハンダ薄膜に濡
れ、ハンダ食われの少ない金属材料、特に、Ｎｉ、Ｃ
ｕ、Ｐｔとすることにより、基板電極１２と端面発光素
子或は受光素子３との間のハンダ薄膜２が実装時に溶融
しても素子３の高さ方向であるｙ方向の制御に影響は及
ばず、良好な実装をすることができる。この端面発光素
子或は受光素子３の高さは光ファイバ４のコアと素子３
の発光部或は受光部の中心とが一致すべく計算設計さ
れ、金属膜１４の厚さをこの設計に対応して設計するこ
とにより高さ方向の精度を制御することができる。Here, this metal material is wetted by a solder thin film, and a metal material with less solder erosion, especially Ni, C
By setting u and Pt, even if the solder thin film 2 between the substrate electrode 12 and the edge emitting element or the light receiving element 3 is melted at the time of mounting, it affects the control in the y direction, which is the height direction of the element 3. And good mounting can be achieved. The height of the end face light emitting element or light receiving element 3 is the same as that of the core of the optical fiber 4
The height of the metal film 14 can be controlled by designing the thickness of the metal film 14 in accordance with this design.
【００１５】更に、端面発光素子或は受光素子３が発熱
する場合があるので、放熱に関して考慮する必要がある
が、膜１４は金属膜であり、合成樹脂或はガラスと比較
して熱伝導が良好であるので放熱的に有利である。Further, since the edge light emitting element or the light receiving element 3 may generate heat, it is necessary to take heat dissipation into consideration. However, the film 14 is a metal film and has a higher heat conduction than a synthetic resin or glass. Since it is good, it is advantageous in terms of heat radiation.
【図１】実施例を説明する分解斜視図。FIG. 1 is an exploded perspective view illustrating an embodiment.
【図２】実施例の一部を上から視た図。FIG. 2 is a top view of a part of the embodiment.
【図３】他の実施例の一部を上から視た図。FIG. 3 is a top view of a part of another embodiment.
【図４】図２の実施例の一部の断面図。FIG. 4 is a partial sectional view of the embodiment of FIG. 2;
【図５】実施例の一部の断面図。FIG. 5 is a partial cross-sectional view of the embodiment.
【図６】従来例を説明する断面図。FIG. 6 is a cross-sectional view illustrating a conventional example.
【図７】従来例の分解斜視図。FIG. 7 is an exploded perspective view of a conventional example.
１ シリコン基板 １１ Ｖ字状溝 １２ 基板電極 １３ 端子電極 １４ 金属膜 ２ ハンダ薄膜 ３ 端面発光素子或は受光素子 ３１ 下側素子電極 ３２ 上側素子電極 ４ 光ファイバ DESCRIPTION OF SYMBOLS 1 Silicon substrate 11 V-shaped groove 12 Substrate electrode 13 Terminal electrode 14 Metal film 2 Solder thin film 3 Edge light emitting element or light receiving element 31 Lower element electrode 32 Upper element electrode 4 Optical fiber
Claims (6)
されると共にＶ字状溝に対応して端面発光素子或は受光
素子をハンダにより実装する基板電極が形成される半導
体基板を具備する端面発光素子或は受光素子の実装構造
において、 基板電極表面に金属膜を形成したことを特徴とする端面
発光素子或は受光素子の実装構造。1. An end face comprising a semiconductor substrate in which a V-shaped groove for mounting an optical fiber is formed and a substrate electrode for mounting an end face light emitting element or a light receiving element by solder corresponding to the V-shaped groove. A mounting structure for a light emitting element or a light receiving element, wherein a metal film is formed on a surface of a substrate electrode.
受光素子の実装構造において、 金属膜は一定膜厚のストライプ状の金属膜であることを
特徴とする端面発光素子或は受光素子の実装構造。2. The edge light emitting device or light receiving element according to claim 1, wherein the metal film is a stripe-shaped metal film having a constant thickness. Mounting structure.
受光素子の実装構造において、 金属膜は一定膜厚の円板状の金属膜であることを特徴と
する端面発光素子或は受光素子の実装構造。3. The edge light emitting device or the light receiving device according to claim 1, wherein the metal film is a disk-shaped metal film having a constant thickness. Device mounting structure.
面発光素子或は受光素子の実装構造において、 金属膜はハンダに濡れ、ハンダ食われの少ない金属材料
より成るものであることを特徴とする端面発光素子或は
受光素子の実装構造。4. The mounting structure of an edge-emitting device or a light-receiving device according to claim 1, wherein the metal film is made of a metal material which is less wetted by solder and less eroded by solder. The mounting structure of the end face light emitting element or the light receiving element.
受光素子の実装構造において、 金属材料はＮｉ、Ｃｕ、Ｐｔの内から選択された何れか
であることを特徴とする端面発光素子或は受光素子の実
装構造。5. The edge light emitting device according to claim 4, wherein the metal material is any one of Ni, Cu, and Pt. Or the mounting structure of the light receiving element.
面発光素子或は受光素子の実装構造において、 基板電極側或は端面発光素子或は受光素子側の何れか一
方の側にハンダ薄膜を予め付与したことを特徴とする端
面発光素子或は受光素子の実装構造。6. The mounting structure of an edge emitting element or a light receiving element according to claim 1, wherein a solder thin film is provided on one of a substrate electrode side and an edge emitting element or a light receiving element side. Characterized in that an edge emitting element or a light receiving element is provided in advance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9124224A JPH10311937A (en) | 1997-05-14 | 1997-05-14 | Packaging structure of end face light emitting element or light receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9124224A JPH10311937A (en) | 1997-05-14 | 1997-05-14 | Packaging structure of end face light emitting element or light receiving element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10311937A true JPH10311937A (en) | 1998-11-24 |
Family
ID=14880073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9124224A Pending JPH10311937A (en) | 1997-05-14 | 1997-05-14 | Packaging structure of end face light emitting element or light receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10311937A (en) |
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