JPH10270400A - Abrasive for manufacturing semiconductor device, and manufacture of the abrasive - Google Patents
Abrasive for manufacturing semiconductor device, and manufacture of the abrasiveInfo
- Publication number
- JPH10270400A JPH10270400A JP7705897A JP7705897A JPH10270400A JP H10270400 A JPH10270400 A JP H10270400A JP 7705897 A JP7705897 A JP 7705897A JP 7705897 A JP7705897 A JP 7705897A JP H10270400 A JPH10270400 A JP H10270400A
- Authority
- JP
- Japan
- Prior art keywords
- abrasive
- emulsion
- particles
- vinyl compound
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置製造用
研磨剤及び該研磨剤の製造方法に関するものである。更
に詳しくは、本発明は、研磨粒子を水に分散させる工程
が不要であり、研磨剤スラリー中での研磨粒子の分散性
が際めて良好で、長期間保存しても研磨粒子の凝集や沈
降がなく、乳化重合時に研磨粒子の粒径が任意に制御で
き、その形状は球形であるため安定した研磨特性が得ら
れ、被研磨表面に傷の発生がなく、研磨粒子が樹脂であ
るため、研磨後に酸素プラズマ等で燃焼させることによ
り、被研磨膜表面から完全に除去することが可能であ
る、などの特徴を有しているため安定した研磨特性が得
られ、さらに傷やディッシング、残留粒子のない研磨膜
表面が得られるため、研磨粒子の残留による信頼性の低
下や製品歩留まりの低下等の半導体装置製造における不
良を引き起こすことがない半導体装置製造用研磨剤、及
び該研磨剤の製造方法に関するものである。The present invention relates to an abrasive for manufacturing a semiconductor device and a method for manufacturing the abrasive. More specifically, the present invention does not require a step of dispersing the abrasive particles in water, and the dispersibility of the abrasive particles in the abrasive slurry is particularly good. There is no sedimentation, the particle size of the abrasive particles can be arbitrarily controlled during emulsion polymerization, the shape is spherical, so stable polishing characteristics are obtained, there is no scratch on the surface to be polished, and the abrasive particles are resin. By burning it with oxygen plasma or the like after polishing, it can be completely removed from the surface of the film to be polished. An abrasive for producing semiconductor devices which does not cause defects in semiconductor device production such as a decrease in reliability due to residual abrasive particles and a decrease in product yield because a polishing film surface free of particles is obtained, and production of the abrasive It relates to the law.
【０００２】[0002]
【従来の技術】近年、ＬＳＩの高集積化、高性能化のた
めに様々な微細加工技術が研究開発されている。このな
かで化学的機械研磨方法（ケミカルメカニカルポリッシ
ング、以下ＣＭＰと省略する）が注目されている。ＣＭ
Ｐは研磨剤と被研磨体の間の化学的作用と研磨剤中の研
磨粒子の機械的作用とを複合化させた技術であり、特に
多層配線形成工程における層間絶縁膜の平坦化、金属プ
ラグ形成、埋め込み金属配線形成において必須の技術と
なっている。2. Description of the Related Art In recent years, various microfabrication techniques have been researched and developed for high integration and high performance of LSI. Among them, a chemical mechanical polishing method (Chemical Mechanical Polishing, hereinafter abbreviated as CMP) has attracted attention. CM
P is a technology in which the chemical action between the abrasive and the object to be polished is combined with the mechanical action of the abrasive particles in the abrasive. It is an indispensable technique in formation and buried metal wiring formation.
【０００３】ＬＳＩの高速化の観点から、金属配線に使
用される金属には低い抵抗を有するＡｌやＣｕが今後主
流になると思われ、これらの金属を用いた金属プラグ形
成や埋め込み配線形成が活発に検討されている。一般に
ＡｌやＣｕのＣＭＰでは、アルミナ等の無機性の粒子と
硝酸鉄や過酸化水素水などの酸化剤との混合物からなる
研磨剤スラリーが主に検討されている。しかしながらＡ
ｌやＣｕの金属は硬度が低いため、アルミナやシリカ等
の硬度の高い無機性の粒子で研磨すると金属膜表面に傷
がついて表面が粗くなったり、配線用金属膜に研磨粒子
が埋め込まれたりする。また溝や開口部に埋め込まれた
配線用金属膜の幅が広い領域では、中心部の厚さが薄く
なるディッシング（dishing）が発生する。ディッシン
グが生じると、その部分に研磨粒子が残留しやすくな
る。特にＡｌやＣｕのように硬度が低い金属ではその傾
向が顕著に現れる。配線用金属膜表面の傷やディッシン
グの発生、あるいは研磨粒子の残留等は、配線抵抗を増
加させたり、断線を引き起こして、信頼性の低下や製品
の歩留まりの低下を招く。[0003] From the viewpoint of increasing the speed of LSI, Al and Cu having low resistance are expected to become the mainstream metal used for metal wiring in the future, and metal plug formation and buried wiring formation using these metals will be active. Is being considered. Generally, in the CMP of Al or Cu, an abrasive slurry composed of a mixture of inorganic particles such as alumina and an oxidizing agent such as iron nitrate and hydrogen peroxide is mainly studied. However, A
Since metals such as l and Cu have low hardness, polishing with inorganic particles having high hardness such as alumina or silica may damage the surface of the metal film and make the surface rough, or abrasive particles may be embedded in the metal film for wiring. I do. In a region where the width of the wiring metal film embedded in the groove or the opening is wide, dishing in which the thickness of the central portion is small occurs. When dishing occurs, abrasive particles tend to remain at that portion. In particular, this tendency is remarkable in metals having low hardness such as Al and Cu. Occurrence of scratches or dishing on the surface of the wiring metal film, residual abrasive particles, and the like increase wiring resistance and cause disconnection, resulting in lower reliability and lower product yield.
【０００４】このような不具合を改良する方法として、
近年、特開平７−８６２１６に記されるように、有機高
分子化合物を主成分とする粒子を研磨粒子として使用す
る方法が提案されている。この方法では、ＰＭＭＡなど
のメタクリル樹脂、フェノール樹脂、メラミン樹脂、ポ
リスチレン樹脂、ポリカーボネート樹脂等の有機高分子
化合物あるいはカーボンブラック等の研磨粒子を分散剤
とともに水に分散させて研磨に供する。また本方法に記
載される研磨粒子は、研磨膜表面に残存しても、酸素プ
ラズマ等で燃焼させることにより完全に除去できること
が特徴であると記載されている。しかしながら本方法で
は、研磨粒子を分散剤とともに水に分散させて研磨剤ス
ラリーを調製する工程が必要なため、研磨剤スラリー調
製時にバッチごとの粒子の分散性や安定性がばらつく可
能性があること、長期間保存中に研磨粒子が凝集、沈降
するなどの可能性があること、研磨粒子の粒径を任意に
制御ができないことなどの問題がある。[0004] As a method of improving such a problem,
In recent years, as described in JP-A-7-86216, a method has been proposed in which particles mainly composed of an organic polymer compound are used as abrasive particles. In this method, abrasive particles such as organic polymer compounds such as methacrylic resin such as PMMA, phenolic resin, melamine resin, polystyrene resin and polycarbonate resin, or carbon black are dispersed in water together with a dispersant, and then subjected to polishing. Further, it is described that the abrasive particles described in the present method are characterized in that even if they remain on the polishing film surface, they can be completely removed by burning with oxygen plasma or the like. However, this method requires a step of preparing an abrasive slurry by dispersing the abrasive particles in water together with a dispersant.Therefore, the dispersibility and stability of the particles in each batch may vary during the preparation of the abrasive slurry. In addition, there is a problem that the abrasive particles may aggregate and settle during storage for a long period of time, and the particle size of the abrasive particles cannot be arbitrarily controlled.
【０００５】[0005]
【発明が解決しようとする課題】かかる現状に鑑み、本
発明が解決しようとする課題は、研磨粒子を水に分散さ
せる工程が不要であり、研磨剤スラリー中での研磨粒子
の分散性が際めて良好で、長期間保存しても研磨粒子の
凝集や沈降がなく、乳化重合時に研磨粒子の粒径が任意
に制御でき、その形状は球形であるため安定した研磨特
性が得られ、被研磨表面に傷の発生がなく、研磨粒子が
樹脂であるため、研磨後に酸素プラズマ等で燃焼させる
ことにより、被研磨膜表面から完全に除去することが可
能である、などの特徴を有しているため安定した研磨特
性が得られ、さらに傷やディッシング、残留粒子のない
研磨膜表面が得られるため、研磨粒子の残留による信頼
性の低下や製品歩留まりの低下等の半導体装置製造にお
ける不良を引き起こすことがない半導体装置製造用研磨
剤、及び該研磨剤の製造方法を提供する点に存するもの
である。SUMMARY OF THE INVENTION In view of the above situation, the problem to be solved by the present invention is that the step of dispersing abrasive particles in water is unnecessary, and the dispersibility of abrasive particles in an abrasive slurry is extremely low. It does not cause agglomeration or sedimentation of the abrasive particles even when stored for a long period of time, the particle size of the abrasive particles can be arbitrarily controlled during emulsion polymerization, and the shape is spherical, so that stable polishing characteristics can be obtained. Since there is no scratch on the polished surface and the abrasive particles are a resin, they can be completely removed from the film surface to be polished by burning them with oxygen plasma or the like after polishing. As a result, stable polishing characteristics can be obtained, and a polishing film surface free of scratches, dishing, and residual particles can be obtained, which leads to defects in semiconductor device manufacturing such as reduction in reliability due to residual polishing particles and reduction in product yield. Ki Succoth no semiconductor device manufacturing abrasives, and in which resides in providing a method for producing the abrasive.
【０００６】[0006]
【課題を解決するための手段】すなわち、本発明のうち
一の発明は、乳化重合により得られるビニル化合物重合
体樹脂粒子を含有する水性エマルジョンからなる半導体
装置製造用研磨剤に係るものである。That is, one aspect of the present invention relates to an abrasive for manufacturing a semiconductor device, comprising an aqueous emulsion containing vinyl compound polymer resin particles obtained by emulsion polymerization.
【０００７】また本発明のうち他の発明は、ビニル化合
物を乳化重合する上記の半導体装置製造用研磨剤の製造
方法に係るものである。Another aspect of the present invention relates to a method for producing an abrasive for producing a semiconductor device as described above, which emulsion-polymerizes a vinyl compound.
【０００８】[0008]
【発明の実施の形態】ビニル化合物としては、スチレ
ン、ビニルトルエン、α−メチルスチレンなどの芳香族
ビニル化合物；ブタジエン、イソプレンなどの共役ジエ
ン系化合物；塩化ビニル、塩化ビニリデンなどのハロゲ
ン化ビニル；エチレン；酢酸ビニル、プロピオン酸ビニ
ル、酪酸ビニル、ピバリン酸ビニル、ラウリル酸ビニ
ル、バーサチック酸ビニルなどのビニルエステル；（メ
タ）アクリル酸メチル、（メタ）アクリル酸エチル、
（メタ）アクリル酸ブチル、（メタ）アクリル酸２−エ
チルヘキシル、（メタ）アクリル酸ラウリル、（メタ）
アクリル酸ステアリルなどの（メタ）アクリル酸と炭素
数１〜１８のアルキルアルコールとのエステル化合物；
マレイン酸エステル、フマル酸エステル、イタコン酸エ
ステルなどのジカルボン酸ビニルエステル；アクリル
酸、メタクリル酸、クロトン酸、イタコン酸、マレイン
酸、フマル酸、無水マレイン酸などのα、β−エチレン
性不飽和カルボン酸；（メタ）アクリロニトリルなどを
例示することができる。これらのビニル化合物は単独で
重合させてもよく、あるいは上記の少なくとも一種類以
上の他のビニル化合物と共重合させてもよい。また、ア
ミド基、水酸基、メトキシ基、グリシジル基などを含有
する官能性ビニルモノマー、α、β−不飽和結合を有す
るモノマー、ポリ（メタ）アクリレートなどの多官能性
モノマーを必要に応じて用いることも可能である。BEST MODE FOR CARRYING OUT THE INVENTION As vinyl compounds, aromatic vinyl compounds such as styrene, vinyltoluene and α-methylstyrene; conjugated diene compounds such as butadiene and isoprene; vinyl halides such as vinyl chloride and vinylidene chloride; Vinyl esters such as vinyl acetate, vinyl propionate, vinyl butyrate, vinyl pivalate, vinyl laurate, and vinyl versatate; methyl (meth) acrylate, ethyl (meth) acrylate,
Butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acrylate, (meth)
Ester compounds of (meth) acrylic acid such as stearyl acrylate and an alkyl alcohol having 1 to 18 carbon atoms;
Vinyl dicarboxylates such as maleic acid ester, fumaric acid ester and itaconic acid ester; α, β-ethylenically unsaturated carboxylic acid such as acrylic acid, methacrylic acid, crotonic acid, itaconic acid, maleic acid, fumaric acid and maleic anhydride Acid; (meth) acrylonitrile and the like. These vinyl compounds may be polymerized singly or may be copolymerized with at least one or more other vinyl compounds described above. In addition, a functional vinyl monomer containing an amide group, a hydroxyl group, a methoxy group, a glycidyl group, a monomer having an α, β-unsaturated bond, and a polyfunctional monomer such as poly (meth) acrylate may be used as necessary. Is also possible.
【０００９】乳化重合の方法としては、特に制限はな
く、例えば、モノマーは、そのまま重合系内に添加して
もよく、あらかじめ乳化して添加してもよい。モノマー
の添加方法は、モノマーの全量を最初に添加して重合し
てもよく、分割添加、連続添加して重合してもよい。開
始剤の添加方法も同様に特に制限はない。The method of emulsion polymerization is not particularly limited. For example, the monomer may be added as it is to the polymerization system, or may be added after emulsifying in advance. Regarding the method of adding the monomer, the whole amount of the monomer may be added first and then polymerized, or the monomer may be added dividedly or continuously and then polymerized. Similarly, the method of adding the initiator is not particularly limited.
【００１０】乳化剤としては、乳化重合に通常用いられ
る水溶性高分子、カチオン性、アニオン性、ノニオン
性、両性界面活性剤などが使用できる。なお、界面活性
剤を用いないソープフリー重合でもよい。As the emulsifier, water-soluble polymers, cationic, anionic, nonionic, amphoteric surfactants and the like usually used for emulsion polymerization can be used. In addition, soap-free polymerization using no surfactant may be used.
【００１１】重合開始剤としてはフリーラジカルを発生
する化合物であればいずれも使用することが可能であ
り、過硫酸カリウム、過硫酸ナトリウム、過硫酸アンモ
ニウム、２，２−アゾビス（２−アミノプロパン）塩酸
塩、アゾビスイソブチロニトリル、過酸化水素、ベンゾ
イルパーオキサイド、キュメンハイドロパーオキサイ
ド、ｔ−ブチルハイドロパーオキサイドなど、又はこれ
らとＬ−、Ｄ−アスコルビン酸、亜硫酸塩、ロンガリッ
ト、硫酸第一鉄のような還元剤と組み合わせたレドック
ス系としてもよい。As the polymerization initiator, any compound capable of generating a free radical can be used, and potassium persulfate, sodium persulfate, ammonium persulfate, 2,2-azobis (2-aminopropane) hydrochloride can be used. Salt, azobisisobutyronitrile, hydrogen peroxide, benzoyl peroxide, cumene hydroperoxide, t-butyl hydroperoxide, or the like, or L-, D-ascorbic acid, sulfite, Rongalit, ferrous sulfate And a redox system in combination with a reducing agent such as
【００１２】重合開始剤濃度は、モノマーに対して通常
０．０５〜５重量％であり、重合温度は通常３０〜１０
０℃であり、好ましくは４０〜８０℃である。The polymerization initiator concentration is usually 0.05 to 5% by weight based on the monomer, and the polymerization temperature is usually 30 to 10%.
0 ° C., preferably 40 to 80 ° C.
【００１３】樹脂粒子の粒径及び粒度分布は、乳化剤
種、乳化剤濃度、開始剤濃度、モノマーの添加方法、撹
袢条件などの操作により制御することができる。樹脂粒
子の平均粒径は、０.０５〜０.５μｍであることが好ま
しい。該平均粒径が過小であると粒子が凝集して被研磨
表面に傷が発生する可能性があり、一方該平均粒径が過
大であると傷が発生し、ディッシングが増大する可能性
がある。The particle size and the particle size distribution of the resin particles can be controlled by controlling the kind of the emulsifier, the concentration of the emulsifier, the concentration of the initiator, the method of adding the monomer, and the stirring conditions. The average particle size of the resin particles is preferably 0.05 to 0.5 μm. If the average particle size is too small, the particles may aggregate and scratches may occur on the surface to be polished, while if the average particle size is too large, scratches may occur and dishing may increase. .
【００１４】半導体装置製造プロセスに用いることを考
慮すると、重合系内に添加する乳化剤、開始剤などの原
料は、金属塩でないものが好ましい。In consideration of use in a semiconductor device manufacturing process, it is preferable that raw materials such as an emulsifier and an initiator added to the polymerization system are not metal salts.
【００１５】本発明の半導体装置製造用研磨剤の被研磨
対象膜としては、純Ａｌ膜、ＡｌＳｉＣｕ合金、ＡｌＣ
ｕ合金等のＡｌを主成分とする合金からなる膜、純Ｃｕ
膜、シリコン酸化膜、シリコン窒化膜、アモルファスシ
リコン膜、多結晶シリコン膜、単結晶シリコン膜等があ
げられる。The polishing target film of the abrasive for manufacturing a semiconductor device according to the present invention may be a pure Al film, an AlSiCu alloy, an AlC
film made of an alloy containing Al as a main component such as u alloy, pure Cu
Film, a silicon oxide film, a silicon nitride film, an amorphous silicon film, a polycrystalline silicon film, a single crystal silicon film, and the like.
【００１６】本発明の半導体装置製造用研磨剤は、酸性
からアルカリ性までの幅広いｐＨ範囲で研磨に使用する
ことが可能なので、被研磨対象膜の種類によって化学的
エッチング作用が進行するような条件を選択することが
必要である。もちろん、化学的エッチングを促進するよ
うな薬品や酸化剤を添加して研磨することも可能であ
る。Since the polishing slurry for manufacturing a semiconductor device of the present invention can be used for polishing in a wide pH range from acidic to alkaline, conditions under which the chemical etching action proceeds depending on the type of the film to be polished are set. It is necessary to make a choice. Of course, it is also possible to add a chemical or an oxidizing agent which promotes chemical etching and perform polishing.
【００１７】[0017]
【実施例】以下に実施例により本発明を説明する。The present invention will be described below by way of examples.
【００１８】＜樹脂エマルジョンの調製＞乳化剤として
ラウリル硫酸アンモニウム３ｇ、超純水５０ｇ、ビニル
化合物としてスチレン５０ｇ及びメタクリル酸メチル５
０ｇを攪拌混合し、これらのビニル化合物のモノマー乳
化液を調製した。つぎに温度調節器、攪拌機を有する５
００ミリリットルの反応器に、ラウリル硫酸アンモニウ
ム０.０９ｇと超純水１７５ｇを入れ、７５℃に昇温し
た後、反応器内を窒素ガスで置換した。その後、反応器
に重合開始剤として４重量パーセントの過硫酸アンモニ
ウム水溶液１０ｇを供給し、続いて先に調製したモノマ
ー乳化液を４時間かけて一定速度で供給してスチレンと
メタクリル酸メチルの共重合体粒子が分散した樹脂エマ
ルジョンを得た。得られたエマルジョン中のスチレン・
メタクリル酸メチル共重合体の粒子濃度は３０.２重量
％であった。顕微鏡観察により、この樹脂粒子は平均粒
径が０.１μｍの球状で、樹脂粒子の凝集物は観察され
なかった。<Preparation of Resin Emulsion> 3 g of ammonium lauryl sulfate, 50 g of ultrapure water as an emulsifier, 50 g of styrene as a vinyl compound and 5 g of methyl methacrylate
0 g was stirred and mixed to prepare a monomer emulsion of these vinyl compounds. Next, having a temperature controller and a stirrer 5
0.09 g of ammonium lauryl sulfate and 175 g of ultrapure water were placed in a 00 ml reactor, heated to 75 ° C., and the reactor was purged with nitrogen gas. Thereafter, 10 g of a 4% by weight aqueous solution of ammonium persulfate was supplied to the reactor as a polymerization initiator, and then the previously prepared monomer emulsion was supplied at a constant rate over 4 hours to give a copolymer of styrene and methyl methacrylate. A resin emulsion in which particles were dispersed was obtained. Styrene in the obtained emulsion
The particle concentration of the methyl methacrylate copolymer was 30.2% by weight. By microscopic observation, the resin particles were spherical with an average particle size of 0.1 μm, and no aggregate of the resin particles was observed.
【００１９】＜スラリーの放置安定性試験＞この樹脂エ
マルジョンは室温下で６ヶ月間放置しても樹脂粒子の沈
降や粒子の凝集は認められなかった。一方、本発明によ
らない無機スラリーについては、沈降物が観測された。<Stability Storage Test of Slurry> Even when this resin emulsion was left at room temperature for 6 months, no sedimentation or aggregation of the resin particles was observed. On the other hand, sediment was observed for the inorganic slurry not according to the present invention.
【００２０】＜Ａｌの研磨＞上記で得られた樹脂エマル
ジョンにアンモニア水と純水を加えてｐＨ１０程度のア
ルカリ性で、樹脂粒子濃度が１０重量％の研磨剤スラリ
ーを調製した。この研磨剤スラリーを用いて、スパッタ
リングで成膜したＡｌ膜の付いたウェハーを研磨機（PR
ESI社，MECAPOL P-200）で研磨した。研磨条件は、回
転定盤の回転数 ５００ｒｐｍ、ウェハー保持台の回転
数 ７５ｒｐｍ、研磨圧力２５０ｇ／ｃｍ2、研磨スラ
リー流量 ５５ｍｌ／分、研磨時間 １分間とした。そ
の結果、Ａｌの研磨速度は６１０オングストローム／分
であり、研磨後のＡｌ表面に傷は観察されなかった。<Abrasion of Al> Ammonia water and pure water were added to the resin emulsion obtained above to prepare an abrasive slurry having an alkaline pH of about 10 and a resin particle concentration of 10% by weight. Using this abrasive slurry, a wafer with an Al film formed by sputtering is polished (PR
Polished by ESI, MECAPOL P-200). The polishing conditions were as follows: the number of rotations of the rotary platen was 500 rpm, the number of rotations of the wafer holder was 75 rpm, the polishing pressure was 250 g / cm 2 , the flow rate of the polishing slurry was 55 ml / min, and the polishing time was 1 minute. As a result, the polishing rate of Al was 610 Å / min, and no scratch was observed on the Al surface after polishing.
【００２１】[0021]
【発明の効果】以上説明したとおり、本発明により、研
磨粒子を水に分散させる工程が不要であり、研磨剤スラ
リー中での研磨粒子の分散性が際めて良好で、長期間保
存しても研磨粒子の凝集や沈降がなく、乳化重合時に研
磨粒子の粒径が任意に制御でき、その形状は球形である
ため安定した研磨特性が得られ、被研磨表面に傷の発生
がなく、研磨粒子が樹脂であるため、研磨後に酸素プラ
ズマ等で燃焼させることにより、被研磨膜表面から完全
に除去することが可能である、などの特徴を有している
ため安定した研磨特性が得られ、さらに傷やディッシン
グ、残留粒子のない研磨膜表面が得られるため、研磨粒
子の残留による信頼性の低下や製品歩留まりの低下等の
半導体装置製造における不良を引き起こすことがない半
導体装置製造用研磨剤、及び該研磨剤の製造方法を提供
することができた。As described above, according to the present invention, the step of dispersing the abrasive particles in water is unnecessary, the dispersibility of the abrasive particles in the abrasive slurry is extremely good, and the abrasive particles can be stored for a long time. Also, there is no agglomeration or sedimentation of the abrasive particles, the particle size of the abrasive particles can be arbitrarily controlled at the time of emulsion polymerization, and the shape is spherical, so that stable polishing characteristics can be obtained, and the surface to be polished has no scratches, and Since the particles are resin, by burning them with oxygen plasma or the like after polishing, they can be completely removed from the surface of the film to be polished. Further, since a polishing film surface free from scratches, dishing, and residual particles is obtained, polishing for semiconductor device manufacturing that does not cause defects in semiconductor device manufacturing such as a decrease in reliability due to residual polishing particles and a reduction in product yield. Agent, and it is possible to provide a manufacturing method of the abrasive.
Claims (2)
合体樹脂粒子を含有する水性エマルジョンからなる半導
体装置製造用研磨剤。An abrasive for producing semiconductor devices, comprising an aqueous emulsion containing vinyl compound polymer resin particles obtained by emulsion polymerization.
載の半導体装置製造用研磨剤の製造方法。2. The method for producing an abrasive for producing a semiconductor device according to claim 1, wherein the vinyl compound is emulsion-polymerized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7705897A JPH10270400A (en) | 1997-03-28 | 1997-03-28 | Abrasive for manufacturing semiconductor device, and manufacture of the abrasive |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7705897A JPH10270400A (en) | 1997-03-28 | 1997-03-28 | Abrasive for manufacturing semiconductor device, and manufacture of the abrasive |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10270400A true JPH10270400A (en) | 1998-10-09 |
Family
ID=13623202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7705897A Pending JPH10270400A (en) | 1997-03-28 | 1997-03-28 | Abrasive for manufacturing semiconductor device, and manufacture of the abrasive |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10270400A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6375545B1 (en) | 1999-01-18 | 2002-04-23 | Kabushiki Kaisha Toshiba | Chemical mechanical method of polishing wafer surfaces |
| US6454819B1 (en) | 1999-01-18 | 2002-09-24 | Kabushiki Kaisha Toshiba | Composite particles and production process thereof, aqueous dispersion, aqueous dispersion composition for chemical mechanical polishing, and process for manufacture of semiconductor device |
| US6559056B2 (en) | 2000-05-18 | 2003-05-06 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing |
| JP2003277728A (en) * | 2002-03-27 | 2003-10-02 | Yasuhiro Tani | Handling method of carrier particle and abrasive |
| US6800105B2 (en) | 2000-01-11 | 2004-10-05 | Sumitomo Chemical Company, Limited | Abrasive for metal |
| US7833431B2 (en) | 2005-12-01 | 2010-11-16 | Kabushiki Kaisha Toshiba | Aqueous dispersion for CMP, polishing method and method for manufacturing semiconductor device |
| CN113999654A (en) * | 2021-11-25 | 2022-02-01 | 河南崇锋新材料科技有限公司 | Superhard abrasive cluster and manufacturing method thereof |
-
1997
- 1997-03-28 JP JP7705897A patent/JPH10270400A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6375545B1 (en) | 1999-01-18 | 2002-04-23 | Kabushiki Kaisha Toshiba | Chemical mechanical method of polishing wafer surfaces |
| US6454819B1 (en) | 1999-01-18 | 2002-09-24 | Kabushiki Kaisha Toshiba | Composite particles and production process thereof, aqueous dispersion, aqueous dispersion composition for chemical mechanical polishing, and process for manufacture of semiconductor device |
| KR100472882B1 (en) * | 1999-01-18 | 2005-03-07 | 가부시끼가이샤 도시바 | Aqueous Dispersion, Chemical Mechanical Polishing Aqueous Dispersion Composition, Wafer Surface Polishing Process and Manufacturing Process of a Semiconductor Apparatus |
| US6800105B2 (en) | 2000-01-11 | 2004-10-05 | Sumitomo Chemical Company, Limited | Abrasive for metal |
| US6559056B2 (en) | 2000-05-18 | 2003-05-06 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing |
| JP2003277728A (en) * | 2002-03-27 | 2003-10-02 | Yasuhiro Tani | Handling method of carrier particle and abrasive |
| JP4688397B2 (en) * | 2002-03-27 | 2011-05-25 | 泰弘 谷 | Carrier particle handling method and abrasive |
| US7833431B2 (en) | 2005-12-01 | 2010-11-16 | Kabushiki Kaisha Toshiba | Aqueous dispersion for CMP, polishing method and method for manufacturing semiconductor device |
| CN113999654A (en) * | 2021-11-25 | 2022-02-01 | 河南崇锋新材料科技有限公司 | Superhard abrasive cluster and manufacturing method thereof |
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