TW583294B - Polishing compositions having organic polymer particles - Google Patents

Polishing compositions having organic polymer particles Download PDF

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Publication number
TW583294B
TW583294B TW091106648A TW91106648A TW583294B TW 583294 B TW583294 B TW 583294B TW 091106648 A TW091106648 A TW 091106648A TW 91106648 A TW91106648 A TW 91106648A TW 583294 B TW583294 B TW 583294B
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Taiwan
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usa
polishing
particles
polymer particles
organic polymer
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TW091106648A
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Chinese (zh)
Inventor
Wesley D Costas
Craig D Lack
Daniel A Saucy
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Rodel Inc
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Priority claimed from US09/826,525 external-priority patent/US6568997B2/en
Application filed by Rodel Inc filed Critical Rodel Inc
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Publication of TW583294B publication Critical patent/TW583294B/en

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

An aqueous polishing composition for chemical mechanical polishing to remove copper from a buffer material, the composition comprising, an oxidizing agent, a complexing agent, an inhibitor, a dishing reducing agent, and abrasive particles comprising organic polymer particles for clearing relatively soft copper from the buffer material by chemical mechanical polishing while minimizing dishing and avoiding removal of the buffer material.

Description

583294583294

本發明係針對鋼金屬 CMP 〇 電路之半導體基材之化學機械拋光 半導體基材包括半導體晶圓及多層之材料，包括—声絕 緣層’如氧切’其係'經沉積且提供堅㈣及金屬導體， ^銅/、係以層狀沉積’且堅勤形成銅電路。金屬導體係 藉由緩衝材料如鈕或氮化鈕與絕緣材料分離。 ” CMP為用於去除過量銅掣 题 - 據CMP製程’係使拋 ° ，且經過基材表面，同時將水性拋光袓人物 加於拋光墊及⑽光之基材表面之間。撤光組合物中:研 磨顆粒可施加研磨，以增加拋光之去除速率。本發明之前 ’均使用無機研磨顆粒’包含：氧化鋁、氧化矽、氧化鈽 、氧化鍺、鑽石、碳化石夕、氧化鈦、氧化結、氮化领、碳 化硼及其混合物。 晶圓上之銅層係藉由執行CMP ,直到銅自基材表面清除 為止拋，。CMP至銅層之高處或突起（其為高於抛光表面平 句表面问度之口 [5刀）直接去除銅。低處或凹處之銅材料（包含 凹處中之銅電路)均比平均表面高度低。首先需自高處去除 銅，且須以比移除低處銅之速率快之速率，自高處去除銅 材料達成。然而，CMP製程會去除高處及低處之鋼。當拋 光銅電路，亦即谷底之同時，邊緣比較會使更多之中:抛 光且去除。始將使中心變低。此將造成已知如、、凹陷〃之 問題。本發明可使其明顯的降低，亦即使凹陷為最小。 本發明之拋光組合物具有有機聚合物顆粒當作研磨顆粒 。晶圓上之銅層係藉由CMP，使用本發明之拋光組合物拋 583294 A7 B7 五、發明説明（2 ) 光，去除銅層上高峰。銅自基材或晶圓之表面清除可使銅 電路之凹陷為最小，亦即實質的減低。本文中之平整化係 指在去除銅層之CMP製程下，使谷底中銅之凹陷為最小， 自半導體基材清除銅，且谷底中銅之凹陷為最小。 以下將參考下列詳細敘述，以實例說明本發明較佳具體 例。 有機聚合物顆粒在CMP過程中施加研磨以去除半導體電 路銅層之高點〃，且提供平整化之銅電路。該聚合物顆 粒無法提供與無機顆粒相同之研磨水準，但可提供實質較 低量之研磨。銅為相對較軟之金屬，且可以以有機聚合物 顆粒拋光輕易的去除。有機聚合物顆粒經選擇，使得僅相 對軟之銅經拋光清除，亦即去除且平整化，且並非緩衝材 料相對較硬材料之層，如组或氮化组。 拋光組合物之具體例並不具有無機研磨顆粒。另一具體 例不含〇.〇 1 %至3 wt%之無機研磨顆粒，例如氧化紹及氧化 矽或其混合物，以調整CMP過程中去除速率之增加。 拋光組合物以組合物之重量為準，包含0.1-5.Owt%之以 GPC(凝膠滲透層析）測定之數平均分子量至少為500,000之 聚合物顆粒。其一具體例之Tg(玻璃轉移溫度）至少為25 °C 。組合物之另一具體例以組合物之重量為準，含0.25-l.Owt%之數平均分子量為500,000至3,000,000，且Tg為25至 130°C之聚合物。另一具體例之Tg為25至90°C。 聚合物之Tg係使用Texas Instruments (型號2010)之差分掃 描比色計（DSC)，且進行已知程序測量，其中聚合物樣品係 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)The present invention is a chemical mechanical polishing of semiconductor substrates for steel-metal CMP circuits. Semiconductor substrates include semiconductor wafers and multiple layers of materials, including—acoustic insulation layers such as oxygen cuts and other systems that are deposited and provide solid and metallic materials. The conductor, `` copper /, is deposited in layers '' and forms a copper circuit. The metal conductor system is separated from the insulating material by a buffer material such as a button or a nitride button. CMP is used to remove excess copper. According to the CMP process, it is thrown through the surface of the substrate, and at the same time, a water-based polishing character is added between the polishing pad and the surface of the polished substrate. Light-removing composition Middle: Abrasive particles can be ground to increase the removal rate of polishing. Prior to the present invention, 'all inorganic abrasive particles were used' included: alumina, silica, hafnium oxide, germanium oxide, diamond, carbide stone, titanium oxide, oxide scale , Nitride collar, boron carbide, and mixtures thereof. The copper layer on the wafer is polished by performing CMP until the copper is removed from the substrate surface. CMP to the height or protrusion of the copper layer (which is higher than the polished surface) The flat mouth of the plain sentence [5 knives] directly removes copper. The copper material (including copper circuits in the depressions) in the lower or concave areas is lower than the average surface height. The copper needs to be removed from the high areas first. The rate is faster than the rate of removing copper in low places. It is achieved by removing copper materials from high places. However, the CMP process will remove steel in high places and low places. When polishing the copper circuit, that is, the valley bottom, the edge comparison will make more Among many: polished and removed. The center will be lowered. This will cause known problems such as depressions and depressions. The invention can significantly reduce it, even if the depressions are minimal. The polishing composition of the invention has organic polymer particles as abrasive particles. The copper layer on the wafer is polished by CMP using the polishing composition of the present invention 583294 A7 B7 V. Description of the invention (2) Light is used to remove the peak on the copper layer. The removal of copper from the surface of the substrate or wafer can make the copper The depression of the circuit is the smallest, which is a substantial reduction. The leveling in this article means that the copper depression in the valley is minimized under the CMP process of removing the copper layer, the copper is removed from the semiconductor substrate, and the copper depression in the valley is It is the smallest. The following will refer to the following detailed description to illustrate the preferred specific examples of the present invention. The organic polymer particles are polished during the CMP process to remove the high point of the copper layer of the semiconductor circuit, and provide a planarized copper circuit. Polymer particles cannot provide the same level of grinding as inorganic particles, but can provide substantially lower amounts of grinding. Copper is a relatively soft metal and can be polished with organic polymer particles Easy to remove. Organic polymer particles are selected so that only relatively soft copper is removed by polishing, that is, it is removed and flattened, and is not a layer of relatively hard material, such as a group or a nitride group, of a cushioning material. Specific examples do not have inorganic abrasive particles. Another specific example does not contain 0.01% to 3% by weight of inorganic abrasive particles, such as oxide and silicon oxide or mixtures thereof, to adjust the increase in removal rate during CMP. Polishing The composition is based on the weight of the composition, and includes 0.1-5. 0 wt% of polymer particles having a number average molecular weight of at least 500,000 as determined by GPC (gel permeation chromatography). Tg (glass transition temperature) of a specific example thereof ) Is at least 25 ° C. Another specific example of the composition is based on the weight of the composition, and contains a polymer with a number average molecular weight of 500,000 to 3,000,000 and a Tg of 25 to 130 ° C. The Tg of another specific example is 25 to 90 ° C. The Tg of the polymer was measured using a differential scanning colorimeter (DSC) from Texas Instruments (model 2010) and a known procedure was used. The polymer sample is a Chinese standard (CNS) A4 (210 X 297). (Mm)

裝Hold

583294 A7 B7 五、發明説明（3 ) 在氮氣中，在常溫下起始，且在每分鐘加熱20 °C下加熱， 經過記錄中點值之玻璃轉移溫度。 聚合物顆粒之具體例包含直徑在5至5,000奈米者，及直徑 在50至1500奈米者。 聚合物顆粒係由均質聚合物、共聚物、三聚物、二或多 種聚合物之摻合物、其中之蕊為與殼不同之組合物之蕊-殼 聚合物，或接枝聚合物。此等聚合物顆粒可為固體顆粒或 可為中空球狀之形式。 聚合物顆粒包含含（但不限）苯乙烯之聚合物、苯乙烯之共 聚物及三聚物、丙烯腈、甲基丙烯酸甲酯、甲基丙烯酸甲 酯及丙烯酸烷酯（其中之烷基具有1-1 8個碳原子）或甲基丙烯 酸烷酯（其中烷基具有2-18個碳原子）之共聚物及三聚物，且 可含小百分比之聚合烯屬不飽和羧酸，如曱基丙烯酸或丙 烯酸或丙烯酸或甲基丙烯酸羥基烷酯，或丙烯酸或甲基丙 烯酸之胺基烷酯之顆粒。聚合物可以以單體交聯，如二乙 烯基苯。其一所用之聚合物為與二乙烯基苯交聯之苯乙烯 之聚合物，其可為由中空球體形成之顆粒。 聚合物顆粒包含（但不限）接枝聚合物，例如具有相對高Tg 聚合物主鏈，如聚甲基丙烯酸曱酯，及丙烯酸烷酯如丙烯 酸丁酯之相對低T g聚合物側鏈之接之共聚物。另外，例如 ，接枝聚合物可具有低Tg聚合物之主鏈，如丙烯酸2-乙基 己酯及含微單體之次要量聚甲基丙烯酸曱酯之側鏈。可使 _ 用蕊殼聚合物之聚合物顆粒，其中之殼為高Tg聚合物，如 聚甲基丙烯酸曱酯，且蕊為低Tg聚合物如丙烯酸乙酯。 本紙張尺度適用中國國家標準（CNS) A4規格(210X 297公釐）583294 A7 B7 V. Description of the invention (3) In nitrogen, start at normal temperature, and heat at 20 ° C per minute, and record the glass transition temperature at the midpoint. Specific examples of the polymer particles include those having a diameter of 5 to 5,000 nanometers and those having a diameter of 50 to 1500 nanometers. The polymer particles are composed of a homopolymer, a copolymer, a terpolymer, a blend of two or more polymers, a core-shell polymer of which the core is a composition different from the shell, or a graft polymer. These polymer particles may be solid particles or may be in the form of hollow spheres. Polymer particles include, but are not limited to, polymers containing styrene, copolymers and terpolymers of styrene, acrylonitrile, methyl methacrylate, methyl methacrylate, and alkyl acrylates (wherein the alkyl group has 1-1 8 carbon atoms) or copolymers and terpolymers of alkyl methacrylates (in which the alkyl group has 2-18 carbon atoms), and may contain a small percentage of polymerized ethylenically unsaturated carboxylic acids, such as 曱Particles of acrylic acid or acrylic acid or hydroxyalkyl acrylic acid or methacrylic acid, or aminoalkyl esters of acrylic acid or methacrylic acid. The polymer can be crosslinked as a monomer, such as divinylbenzene. One of the polymers used is a polymer of styrene crosslinked with divinylbenzene, which may be particles formed from hollow spheres. The polymer particles include, but are not limited to, grafted polymers, such as those with relatively high Tg polymer backbones, such as polymethyl methacrylate, and alkyl acrylates, such as butyl acrylate, with relatively low T g polymer side chains. Then connected copolymer. In addition, for example, the graft polymer may have a main chain of a low Tg polymer, such as 2-ethylhexyl acrylate and a minor monomer-containing side chain of a minor amount of polymethylmethacrylate. It is possible to use polymer particles of core shell polymers, where the shell is a high Tg polymer, such as polymethyl methacrylate, and the core is a low Tg polymer, such as ethyl acrylate. This paper size applies to China National Standard (CNS) A4 (210X 297 mm)

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線 583294 A7 ______B7 _ 五、發明説明(Γ4~~) " 形成顆粒聚合物之單體為例如曱基丙烯酸甲酯、曱基丙 烯酸乙酯、甲基丙烯酸丙酯、曱基丙稀酸丁酯、甲基丙烯 酸戊酯、甲基丙稀酸己酯、甲基丙嫦酸辛酯、甲基丙烯酸 月桂酯、甲基丙烯酸硬脂酯、丙烯酸甲酯、丙烯酸乙酯、 丙烯酸丙酯、丙烯酸丁酯、丙烯酸戊酯、丙烯酸己酯、丙 烯酸辛酯、丙烯酸月桂酯、丙烯酸硬脂酯、丙烯酸及甲基 丙烯酸環己酯、丙烯腈、苯乙烯、α曱基苯乙烯、乙烯基 甲苯、丙稀酸及曱基丙烯酸經基烧g旨、如丙烤酸經基乙酉旨 、丙烯酸羥基丙酯、丙烯酸羥基丁酯、曱基丙烯酸羥基乙 酯、甲基丙烯酸羥基丙酯、甲基丙烯酸羥基丁酯、丙烯酸 及甲基丙烯酸胺基烷酯，如丙烯酸胺基乙酯、丙烯酸胺基 丙酯、丙烯酸胺基丁酯、曱基丙烯酸胺基乙酯、甲基丙婦 酸胺基丙S旨、曱基丙烯酸胺基丁醋。可使用之其他適用單 體包含丙烯醯胺、曱基丙烯醯胺、烷氧基甲基丙烯醯胺及 甲基丙嫦醯胺。 聚合物顆粒係以已知之技術形成。可形成水性乳膠且添 加’以形成本發明之抛光組合物。另外，可使用溶液聚合 技術形成聚合物顆粒，接著去除溶劑。聚合物顆粒係分散 於水中，且直接添加於拋光組合物中。 拋光組合物之一具體例以組合物之重量為準，含約〇 〇5_ 2.0wt%之包括聚合之不飽和羧酸單體，且數平均分子量在 約20,0〇〇至1500,000之間之羧酸聚合物顆粒。亦可使用高 及低數平均分子量羧酸之摻合物，且最於許多抛光之鹿用 為車父佳。此等敌酸聚合物係溶液或水性分散液之形式。前 本紙張尺度適用中準(CNS) Αϋ(21()Χ297公爱) ^3294 A7Line 583294 A7 ______B7 _ V. Description of the invention (Γ4 ~~) " The monomers forming the particulate polymer are, for example, methyl ethyl acrylate, ethyl ethyl acrylate, propyl methacrylate, ethyl butyl acrylate , Amyl methacrylate, hexyl methacrylate, octyl methacrylate, lauryl methacrylate, stearyl methacrylate, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate , Amyl acrylate, hexyl acrylate, octyl acrylate, lauryl acrylate, stearyl acrylate, acrylic acid and cyclohexyl methacrylate, acrylonitrile, styrene, α-methyl styrene, vinyl toluene, acrylic acid And fluorinated acrylic acid, such as acrylic acid, hydroxypropyl acrylate, hydroxybutyl acrylate, hydroxyethyl methacrylate, hydroxypropyl methacrylate, hydroxybutyl methacrylate, Acrylic acid and amino alkyl methacrylates, such as amino ethyl acrylate, amino propyl acrylate, amino butyl acrylate, fluorenyl amine ethyl acrylate, methacrylic acid amine propyl, methyl C Butyric acid amine vinegar. Other suitable monomers that can be used include acrylamide, acrylamide, alkoxymethacrylamide and methacrylamide. The polymer particles are formed by known techniques. An aqueous latex may be formed and added to form the polishing composition of the present invention. Alternatively, polymer particles can be formed using a solution polymerization technique followed by removal of the solvent. The polymer particles are dispersed in water and added directly to the polishing composition. A specific example of the polishing composition is based on the weight of the composition, and contains about 0.05 to 2.0% by weight of unsaturated carboxylic acid monomer including polymerization, and the number average molecular weight is about 20,000 to 1500,000. Inter-carboxylic acid polymer particles. Blends of high and low number average molecular weight carboxylic acids can also be used, and most polished deer are good for car riders. These diene acid polymers are in the form of a solution or an aqueous dispersion. Previous This paper is suitable for CNS Αϋ (21 () × 297 public love) ^ 3294 A7

發明説明 述聚合物之數平均分子量係以GPC(凝膠滲透層析）測定。對 於某些抛光組合物，可使用含高羧酸之共聚物或三聚物， 其中之羧酸成分包括5-75wt%之聚合物。一般該聚合物為（ 甲基）丙烯酸及丙烯醯胺或甲基丙烯醯胺之聚合物+(甲基）丙 婦酸及苯乙烯與其他乙烯基芳系單體之聚合物；（甲基）丙烯 酸烧酯（丙烯酸或甲基丙烯酸之酯類）及單或二羧酸如丙烯酸 或甲基丙烯酸或衣康酸之聚合物；具有取代基（如函素，亦 即氣、氟、溴，硝基、氰基、烷氧基、鹵烷基、羧基、胺 基、胺基烷基）之經取代乙烯基芳系單體，及未經取代單或 雙二羧酸及（甲基）丙烯酸烷酯之聚合物；含氮環之烯屬不飽 和單體如乙烯基比啶、烷基乙烯基比啶、乙烯基丁内酯、 乙稀基己内酯，與不飽和單或二羧酸之聚合物；稀烴如丙 稀、異丁烯、或具有10至20個碳原子之長鏈烷基烯烴與不 飽和單或二羧酸之聚合物；乙烯基醇酯如乙酸乙烯酯及硬 酉旨酸乙烯酯或乙烯基_化物如氟化乙烯、氣化乙烯、氟化 亞乙稀或乙稀基腈如丙烯腈及曱基丙烯腈與不飽和單或二 竣酸之聚合物；烷基中具有1-24個碳原子之（曱基）丙烯酸烷 酯與不飽和單叛酸丙稀酸或甲基丙稀酸之聚合物。 另一具體例包含生物可降解、降解或可以以其他方式降 解之聚合物。生物可降解之組合物實例為含聚（丙烯酸酯共 2-氰基丙烯酸甲酷）段之聚丙烯酸聚合物。 拋光組合物中之氧化劑使基材表面上之金屬轉化成氧化 物，使之變成鈍化層，進一部降低金屬與拋光組合物之反 應’直到以抛光去除為止。抛光組合物之呈體例含1至 8- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐）DESCRIPTION OF THE INVENTION The number average molecular weight of the polymer is measured by GPC (gel permeation chromatography). For certain polishing compositions, copolymers or trimers containing high carboxylic acids can be used, where the carboxylic acid component includes 5-75 wt% polymer. Generally, the polymer is a polymer of (meth) acrylic acid and acrylamide or methacrylamide + (meth) propionic acid and a polymer of styrene and other vinyl aromatic monomers; (meth) Acrylic acid esters (acrylic acid or methacrylic acid esters) and polymers of mono- or dicarboxylic acids such as acrylic acid or methacrylic acid or itaconic acid; have substituents (such as functional elements, that is, gas, fluorine, bromine, nitrate Group, cyano, alkoxy, haloalkyl, carboxyl, amine, aminoalkyl) substituted vinyl aromatic monomers, and unsubstituted mono- or di-dicarboxylic acids and (meth) acrylic acid alkyls Polymers of esters; nitrogen-containing ethylenically unsaturated monomers such as vinylpyridine, alkyl vinylpyridine, vinylbutyrolactone, ethylcaprolactone, and unsaturated mono- or dicarboxylic acids Polymers; dilute hydrocarbons such as propylene, isobutylene, or polymers of long-chain alkyl olefins having 10 to 20 carbon atoms and unsaturated mono- or dicarboxylic acids; vinyl alcohol esters such as vinyl acetate and stearic acid Vinyl esters or vinyl compounds such as fluorinated ethylene, gasified ethylene, fluorinated ethylene or acetonitrile such as propylene And fluorenyl acrylonitrile and unsaturated mono- or di-acid polymers; alkyl (fluorenyl) acrylates with 1 to 24 carbon atoms in the alkyl group and unsaturated mono-acrylic acid acrylic acid or methyl acrylic acid Of polymers. Another specific example includes polymers that are biodegradable, degradable, or otherwise degradable. An example of a biodegradable composition is a poly (acrylic acid polymer) containing poly (acrylic acid with 2-cyanoacrylic acid) segments. The oxidizing agent in the polishing composition converts the metal on the surface of the substrate into an oxide, turning it into a passivation layer, further reducing the reaction of the metal with the polishing composition 'until it is removed by polishing. Presentation of polishing composition contains 1 to 8- This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm)

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583294 A7583294 A7

1 5 wt /〇之氧化劑。一般之氧化劑為過氧化氫、硬酸鹽如硬酸 卸、、賴鹽如魏铯、㈣鋇“肖㈣、㈣銨與確酸絶 之混f物，碳酸鹽如碳酸銨，過硫酸鹽如過硫酸銨及鈉， 及過氯酸鹽。拋光組合物之另-具體例含約5-l〇wt%之氧化 劑。撤光組合物之另_具體例含約9wt%之過氧化氫當作氧 拋光組+合物具有約5〇-5,〇〇〇 ppm(每百萬份）之抑制劑，例 如BTA(苯并二唑）*TTA(甲苯基***）或其混合物。其他抑 制劑包含（但不限）·· 1-羥基苯并***、N-(1H-苯并***·丨·基 甲基）甲酿知’ 3，5- 一曱基p比σ坐、⑼σ坐、4-漠p比唾、3 -胺基一5_ 本基比坐3-胺基-4-ρ比唾猜、1 _甲基咪唾、4丨嗓琳qts等。 拋光、，且β物具有達到3 ·〇wt%，例如〇· 1 _ 1 ·〇wt%之錯合劑， 如馬來酸或如美國專利第5,391，258號中之揭示，或具有二 或多個羧基且具有一個羥基之羧酸。另外，錯合劑包含（且 不限）直鏈單羧酸及其鹽，與二羧酸及其鹽，如馬來酸與馬 來酸鹽、酒石酸與酒石酸鹽，葡糖酸及葡糖酸鹽、擰檬酸 與檸檬酸鹽、丙二酸與丙二酸鹽、甲酸與甲酸鹽、乳酸與 乳酸鹽。亦可使用聚羥基苯曱酸苯二酸及其鹽。 不飽和羧酸單體包含（但不限）不飽和單羧酸及不飽和二幾 酸。一般之不飽和單羧酸單體含3至6個碳原子，且包含丙 稀酸、养聚合丙烯酸、曱基丙烯酸、巴豆酸及乙烯基乙酸 。一般之不飽和二羧酸含4至8個碳原子，且包含其酸酐， 且為例如馬來酸、馬來酸酐、富馬酸、戊二酸、衣康酸、 衣康酸酐、及環己烷二羧酸。亦可使用上述酸之水溶性鹽。 本紙張尺度適用中國國家標準(CNS) A4規格(21〇χ297公釐）15 wt / O oxidant. Common oxidants are hydrogen peroxide, stearic acid salts such as stearic acid, lysine salts such as Wei Cesium, osmium barium, "Xiao ㈣, ammonium osmium, and acid mixtures, f carbonates such as ammonium carbonate, persulfates such as Ammonium and sodium persulfate, and perchlorate. Another specific example of the polishing composition contains about 5-10 wt% oxidant. Another specific example of the light-removing composition contains about 9% by weight of hydrogen peroxide as The oxygen polishing composition has an inhibitor of about 50-50,000 ppm (per million parts), such as BTA (benzodiazole) * TTA (tolyltriazole) or a mixture thereof. Other inhibitors Including (but not limited to) · 1-Hydroxybenzotriazole, N- (1H-benzotriazole · 丨 · methylmethyl) methylbenzene '3,5-monofluorenyl p ratio σ sitting, ⑼σ sitting , 4-dehydropyridine, 3-amino-4, 5-amino, 3-amino-4-ρ, bihalidene, 1-methylimidal, 4 thymine qts, etc. Polished, and β Has a complexing agent of up to 3.0 wt%, such as 0.1-1 wt%, such as maleic acid or as disclosed in US Patent No. 5,391,258, or has two or more carboxyl groups and has one hydroxyl group Carboxylic acid. In addition, the complexing agent includes (and is not limited to) linear Carboxylic acids and their salts, and dicarboxylic acids and their salts, such as maleic acid and maleate, tartaric acid and tartaric acid, gluconic acid and gluconate, citric acid and citrate, malonic acid and Malonate, formic acid and formate, lactic acid and lactate. Polyhydroxybenzoic acid phthalic acid and its salts can also be used. Unsaturated carboxylic acid monomers include (but are not limited to) unsaturated monocarboxylic acids and Saturated dicarboxylic acid. Common unsaturated monocarboxylic acid monomers contain 3 to 6 carbon atoms and contain acrylic acid, polymer acrylic acid, fluoracrylic acid, crotonic acid and vinyl acetic acid. General unsaturated dicarboxylic acid Contains 4 to 8 carbon atoms, and includes its anhydride, and is, for example, maleic acid, maleic anhydride, fumaric acid, glutaric acid, itaconic acid, itaconic anhydride, and cyclohexanedicarboxylic acid. Use the water-soluble salt of the above acid. This paper size is applicable to China National Standard (CNS) A4 specification (21 × 297 mm)

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583294 A7 ------ B7 ___五、發明説明（7 ) 拋光組合物之具體例為pH為5.0之水性組合物。另一具體 例為pH為2.8至4.2。又另一具體例為pH為2.8至3.8。 EP 0 913 442 A2揭示一種聚丙烯酸形式之凹陷降低劑， 以黏附銅且使CMP過程中之凹陷為最小。、、聚（曱基）丙烯酸 "一詞意指丙烯酸之聚合物或曱基丙烯酸之聚合物。最有 用者為數平均分子量約20,000至150,000，較好為25,000至 75,000且最好為25,000至40,000間之聚（曱基）丙烯酸。最佳 者為高及低數平均分子量聚（甲基）丙烯酸。聚（曱基）丙烯酸 之該摻合物或混合物中，數平均分子量為20,000至1〇〇,〇〇〇 ，且較好為20,000至40,000之低數平均分子量聚（甲基）丙烯 酸係與數平均分子量為200,000至1，500,000，較好150,000至 300,000之南數平均分子量聚（曱基）丙稀酸結合。通常，低 數平均分子量聚（甲基）丙烯酸對高數平均分子量聚（曱基）丙 烯酸之重量比為1 〇 : 1至1 : 10，較好為4 ·· 1至1 ·· 4，且更 好為2 : 1至1 : 2。具體例包括丨：丨重量比之數平均分子量 約3 0,000之聚丙烯酸及數平均分子量約25〇,〇〇〇之聚丙烯酸 。前述摻合物中之極低數平均分子量聚（甲基）丙烯酸之具體 例包含例如數平均分子量約1，〇〇〇至5,〇〇〇之聚（甲基）丙烯酸 聚合物。 抛光組合物尚可含pH緩衝劑，如胺，且可含介面活性劑 、去凝絮劑、黏度改質劑、潤濕劑、清潔劑等。 下列拋光墊可配合拋光組合物使用以拋光銅；金屬墊敘 述於美國專利第6,〇22,268號中，含拋光用顆粒之拋光墊敘 述於美國專利第5,489,233號中，聚合物滲入纖維基質中之583294 A7 ------ B7 ___ V. Description of the invention (7) A specific example of the polishing composition is an aqueous composition having a pH of 5.0. Another specific example is a pH of 2.8 to 4.2. In another specific example, the pH is 2.8 to 3.8. EP 0 913 442 A2 discloses a depression reducing agent in the form of a polyacrylic acid to adhere to copper and minimize depressions during CMP. The term "poly (fluorenyl) acrylic acid" means a polymer of acrylic acid or a polymer of fluorinated acrylic acid. Most useful are poly (fluorenyl) acrylic acids having a number average molecular weight of about 20,000 to 150,000, preferably 25,000 to 75,000, and most preferably 25,000 to 40,000. The best are high and low number average molecular weight poly (meth) acrylic acid. In the blend or mixture of poly (fluorenyl) acrylic acid, the number average molecular weight is from 20,000 to 100,000, and preferably from 20,000 to 40,000. The average molecular weight is 200,000 to 1,500,000, preferably 150,000 to 300,000. The average molecular weight of poly (fluorenyl) acrylic acid is bound. In general, the weight ratio of the low number average molecular weight poly (meth) acrylic acid to the high number average molecular weight poly (fluorenyl) acrylic acid is 10: 1 to 1:10, preferably 4 ·· 1 to 1 ·· 4, and More preferably, it is 2: 1 to 1: 2. Specific examples include: polyacrylic acid having a weight average molecular weight of about 30,000 and polyacrylic acid having a number average molecular weight of about 250,000. Specific examples of the extremely low number average molecular weight poly (meth) acrylic acid in the aforementioned blend include, for example, a poly (meth) acrylic polymer having a number average molecular weight of about 1,000 to 5,000. The polishing composition may still contain a pH buffering agent, such as an amine, and may contain a surfactant, a deflocculant, a viscosity modifier, a wetting agent, a cleaning agent, and the like. The following polishing pads can be used with polishing compositions to polish copper; metal pads are described in U.S. Patent No. 6,002,268, and polishing pads containing polishing particles are described in U.S. Patent No. 5,489,233. Polymers penetrate into the fibrous matrix.

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I 光塾，由美國Newark，Delaware 之 R〇del Inc.以 SUBA 銷售 ，含有藉由就地產生或加入中空充填物質（以R〇del&司以商 標POLITEX及1C 1010銷售）形成之孔隙空間之聚合物片之墊 ;含有可視情況含孔隙空間（其係藉由就地產生或加入中空 充填物質（以Rodel公司以商標μη銷售））之填充劑之固體顆 粒聚合物片墊，及多層材料之複合墊，其與欲拋光之半導 體表面接觸之外基材為選自上述之墊之一。 下列實例進一步說明本發明。所有份及百分比均為重量 ，除非另有說明，且分子量係以凝膠滲透層析測定，除非 另有說明。 實例1 製備下列拋光組合物： 對照用拋光組合物 抛光組合物係精由將下列成分換合在一起製備： 0.3份之苯并三吐；0.22份之馬來酸，〇·〇9份之數平均分子 量為30,000之聚丙烯酸，0.9份之數平均分子量為25〇 〇〇〇之 聚丙烯酸’及9.0份之過氧化氫及足量之水使拋光組合物之 總份數為100。 姆,¾..組合物1(1% '、Sunspheres”）一與上述對照用組合物 相同，但將lwt%之、、Sunspheres"聚合物顆粒與對照組合 物摻合。、、Sunspheres"之直徑為350奈米，由羅門哈斯公 司製造’且為由以二乙烯基苯交聯之聚苯乙婦組成之中空 球體，Tg為81°C。 拋光組合物2( 1 % '、Rovaceβ 661)—與上述對照用組入物 -11 - 本紙張尺度適用中國國家標準（CNS) Α4規格(210 X 297公釐）I Guangxi, sold under the SUBA by Rodel Inc. of Newark, Delaware, USA, contains void spaces formed by in situ generation or addition of hollow filling materials (sold under the trademarks POLICEX and 1C 1010 by Rodel & Division). Polymer sheet pads; solid particle polymer sheet pads containing fillers that optionally contain void spaces (which are created in situ or by adding hollow filling materials (sold under the tradename μη by Rodel)) and multilayer materials The composite pad whose base material is in contact with the semiconductor surface to be polished is one of the above-mentioned pads. The following examples further illustrate the invention. All parts and percentages are by weight unless otherwise stated, and molecular weights are determined by gel permeation chromatography unless otherwise stated. Example 1 The following polishing composition was prepared: The polishing composition for comparison The polishing composition was prepared by swapping the following ingredients together: 0.3 parts of benzotriturate; 0.22 parts of maleic acid, 9.0 parts Polyacrylic acid having an average molecular weight of 30,000, 0.9 parts of polyacrylic acid 'having an average molecular weight of 250,000, and 9.0 parts of hydrogen peroxide and sufficient water so that the total number of parts of the polishing composition was 100. , ¾ .. Composition 1 (1% ', Sunspheres ") is the same as the above-mentioned control composition, but 1% by weight of Sunspheres " polymer particles and a control composition are blended., And diameter of Sunspheres " 350 nm, manufactured by Rohm and Haas Corporation, and is a hollow sphere composed of polyvinylbenzene crosslinked with divinylbenzene, with a Tg of 81 ° C. Polishing composition 2 (1% ', Rovace β 661) —Compared with the above-mentioned composition -11-This paper size applies to the Chinese National Standard (CNS) Α4 specification (210 X 297 mm)

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583294 A7 B7 五、發明説明（9 ) 相同，但將l.Owt%之''Rovace" 661與對照組合物摻合。'' Rovace〃 661之直徑為300奈米，由羅門哈斯公司製造，且 為數平均分子量約為1百萬之聚乙酸乙烯酯（PVA)聚合物顆 粒，Tg為 21°C。 拋光組合物3(1% 'Ropaque7/ HP-1055) —與上述對照用組 合物相同，但將lwt%之''Ropaque// HP-1055與對照組合物 摻合。Ropaque HP-105 5之直徑為1000奈米，由羅門哈斯公 司製造，且為經交聯之聚苯乙烯聚合物顆粒，Tg為83°C。 拋光組合物4(1% HG 74 P)—與上述對照用組合物相同， 但將lwt%之HG 74 P聚合物顆粒與對照組合物摻合。HG 74 P之直徑由羅門哈斯公司製造，且為數平均分子量約1百萬 且Tg為29°C之聚曱基丙烯酸曱酯之聚合物顆粒。 拋光組合物5(1% 'Klebosor )—與上述對照用組合物相 同，但將lwt%之、'Klebosor與對照組合物摻合。、、Klebos〇r 為粒徑12奈米之膠體氧化矽，具有無機研磨特性，且由 Clariant公司製造。 銅圖案晶圓之銅凹陷之試驗 晶圓試驗一電鍵200毫米之二氧化石夕銅圖案晶圓（100微米 銅線），且具有Sematech 93 1光罩。 試驗塾一由Newark，Delaware之Ro del公司製造之金屬26 墊（美國專利第6,022,268號中所述）。 試驗用工具一Applied Materials Mira拋光機。 晶圓係以對照用拋光組合物，使用下列拋光參數拋光， 直到以拋光機監測到終點為止。 -12- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 583294 A7 ~--------— B7 五、發明説明（10 ) 向下之力5 psi(3 51·5克/公分） 壓印速度一93 rpm 載具速度—87 rpm 漿料流速一 250毫升/分鐘 監測到終點後，持續拋光但向下之力下降至3 psi(21 〇.9克 /平方公分），直到拋光機之終點痕跡變平為止（亦即曲線之 斜率為零）。此時，所有銅之去除均停止，且沒有銅存在。 對各上述樾光步驟紀錄時間。 晶圓之銅圖案線之凹陷係在Tenc〇r P1輪廓機上測量。測 里曰日圓中心1 〇〇微米之線條，測量晶圓中間之i 〇〇微米線條（ 亦即晶圓中心與邊緣間之一半），與測量晶圓邊緣之i 00微 米線條（亦即晶圓邊緣約i英吋）。在相同條件下，以上述製 備之拋光組合物1-5拋光上述個別之晶圓。各拋光組合物之 結果列於下表1中。 -13-583294 A7 B7 5. The invention description (9) is the same, but 1.0% by weight of "Rovace" 661 is blended with the control composition. '' Rovace〃 661 has a diameter of 300 nm and is manufactured by Rohm and Haas Company. It has polyvinyl acetate (PVA) polymer particles with a number average molecular weight of about 1 million and a Tg of 21 ° C. Polishing composition 3 (1% 'Ropaque7 / HP-1055)-same as the above-mentioned control composition, but 1% by weight of "Ropaque // HP-1055" was blended with the control composition. Ropaque HP-105 5 has a diameter of 1000 nanometers, is manufactured by Rohm and Haas, and is a crosslinked polystyrene polymer particle with a Tg of 83 ° C. Polishing Composition 4 (1% HG 74 P) —Same as the control composition above, but 1 wt% of HG 74 P polymer particles were blended with the control composition. The diameter of HG 74 P is a polymer particle of polyfluorenyl acrylate manufactured by Rohm and Haas Company and having a number average molecular weight of about 1 million and a Tg of 29 ° C. Polishing composition 5 (1% 'Klebosor)-same as the above-mentioned control composition, but 1% by weight of' Klebosor 'and the control composition were blended. Klebosor is a colloidal silica with a particle size of 12 nm. It has inorganic abrasive properties and is manufactured by Clariant. Test of Copper Depression in Copper Patterned Wafers The wafer test is a 200mm keystone oxide copper patterned wafer (100 micron copper wire) with a Sematech 93 1 photomask. Test 1-a metal 26 pad manufactured by Rodel, Newark, Delaware (as described in US Patent No. 6,022,268). Test tool-Applied Materials Mira polishing machine. The wafers were polished with a control polishing composition using the following polishing parameters until the end point was monitored with a polishing machine. -12- This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 583294 A7 ~ --------— B7 V. Description of the invention (10) Downward force 5 psi (3 51.5 g / cm) Imprinting speed-93 rpm Carrier speed-87 rpm Slurry flow rate-250 ml / min After the end point is monitored, the polishing is continued but the downward force is reduced to 3 psi (21 0.9 g / Square centimeters) until the end of the polishing machine flattened (ie the slope of the curve is zero). At this point, all copper removal was stopped and no copper was present. Record the time for each of the above calendering steps. The depression of the copper pattern line of the wafer was measured on a Tenco P1 contouring machine. Measure the line at the center of the Japanese yen at 100 microns, measure the line at the center of the wafer at 100 microns (that is, half of the center and edge of the wafer), and measure the line at the edge of the wafer at 100 microns (that is, the wafer The edges are about i inches). Under the same conditions, the individual wafers were polished with the polishing compositions 1-5 prepared as described above. The results of each polishing composition are shown in Table 1 below. -13-

583294 A7 B7 五、發明説明（11 ) 表 2583294 A7 B7 V. Description of the invention (11) Table 2

拋光組合物 中心凹陷 中間凹陷 邊緣凹陷 對照用組合物，0%聚合物顆粒 900A 875A 1500A 組合物1，1.0%中空交聯之聚苯 乙烯顆粒 420A 900A 1000A 組合物2，1.0% PVA顆粒 未去除 未去除 未去除 組合物3，1.0%聚苯乙烯顆粒 700A 900A 750A 組合物4，1.0% PMMA顆粒 猶 _ 1500A 800A 組合物5，1.0%膠體氧化矽顆粒 1500A 2000A 1800A A—埃 上述結果顯示添加相對較硬之聚合物顆粒可降低銅線條 之凹陷，如交聯聚苯乙烯及PMMA，含相對較軟聚合物顆 粒之組合物2未發生拋光或凹陷，其對於拋光組合物並無法 接受，含一般膠體氧化矽研磨料之組合物5則發生過度之凹 陷，其亦無法為市售拋光組合物接受。包括相對較硬聚合 物顆粒之組合物1、3及4之 '步驟高度〃經改善且降低。'' 步驟高度〃為晶圓表面之高峰與谷底間高度之差異。表面 以CMP成功之拋光可降低步驟高度，以改善平整化，且在 藉由CMP自晶圓清除銅層時之凹陷為最小。 -14- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐）Polishing composition Center depression Center depression Edge depression Control composition, 0% polymer particles 900A 875A 1500A Composition 1, 1.0% hollow crosslinked polystyrene particles 420A 900A 1000A Composition 2, 1.0% PVA particles Removal of unremoved composition 3, 1.0% polystyrene particles 700A 900A 750A composition 4, 1.0% PMMA particles _ 1500A 800A composition 5, 1.0% colloidal silica particles 1500A 2000A 1800A A—the above results show that the addition is relatively Hard polymer particles can reduce the depression of copper lines, such as cross-linked polystyrene and PMMA. Composition 2 containing relatively soft polymer particles has not been polished or dented. It is unacceptable for polishing compositions and contains general colloids. The composition 5 of the silicon oxide abrasive was excessively depressed, and it was not acceptable for a commercially available polishing composition. The 'step height' of compositions 1, 3 and 4 including relatively hard polymer particles was improved and reduced. '' The step height is the difference in height between the peak and valley of the wafer surface. Successful polishing of the surface by CMP can reduce the step height to improve planarization, and minimize the sag when removing the copper layer from the wafer by CMP. -14- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

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Claims (1)

種自緩衝材料去除鋼之化學機械拋光用水性拋光組合 4、、且。物包括氧化劑、研磨顆粒、錯合劑、抑制劑 凹fe降低劑’其特徵為·· 01至5 0重量％之有機聚合物 粒·^研磨顆粒，其藉化學機械拋光而自緩衝材料清除 相對阜乂軟之鋼’同時使谷底中銅之凹陷為最小化，且避 免去除緩衝材料；該有機聚合物難包括數平均分子量 為20,〇〇〇至！，，_間及玻璃轉移溫度至少饥之奴取 合不飽和羧酸單體之水溶性羧酸聚合物。 =申請專利範圍第i項之水性抛光組合物，其特徵 己物顆粒包括聚苯乙烯或聚甲基丙烯酸甲醋。 人 如申請專利範圍第；1項之水性拋光組合物， 機聚合物顆粒之直徑為5至5，_奈米，且有機聚合= 粒之^合物之數平均分子量為·，GGGD，_，_， 璃轉移溫度為25至130。(：。 藏 申請曰期 — 91.4.2 案 號 〇 ^ | 1 σ 6 類 別 (以上各欄由本局填註） A4 C4 中文說明書替換本(93年1月）583294 稱 中 英A water-based polishing combination for chemical-mechanical polishing that removes steel from a buffer material 4, and. Matters include oxidants, abrasive particles, complexing agents, and inhibitors. They are characterized by ... 01 to 50% by weight of organic polymer particles. ^ Abrasive particles, which are removed from the buffer material by chemical mechanical polishing. 'Soft steel' also minimizes the depression of copper in the valley bottom and avoids the removal of cushioning materials; the organic polymer is difficult to include with a number average molecular weight of 20,000 to 10,000! ,, And glass transition temperature of at least hungry slave water-soluble carboxylic acid polymer with unsaturated carboxylic acid monomer. = Water-based polishing composition of the scope of application for item i, characterized in that the particles of the object include polystyrene or polymethyl methacrylate. For example, if the scope of patent application is No. 1: the aqueous polishing composition, the diameter of the organic polymer particles is 5 to 5, nanometers, and the number average molecular weight of the organic polymerization = compound of the particles is ·, GGGD, _, The glass transition temperature is 25 to 130. (:. Tibetan application date — 91.4.2 case number 〇 ^ | 1 σ 6 categories (the above columns are filled by the Office) A4 C4 Chinese manual replacement (January 1993) 583294 Chinese and English 含有機聚合物顆粒之拋光組合物 POLISHING COMPOSITIONS HAVING ORGANIC POLYMER PARTICLES 姓 名 1 ·衛斯理D·科斯塔斯WESLEY D. COSTAS 2.奎格 D.萊克 CRAIG D. LACK 3·丹尼爾 A·索西 DANIEL A. SAUCY 國 籍 1·2·美國 U.S.A. 3.瑞士 SWITZERLAND 人 1.美國德拉瓦州貝爾市米蘭諾街115號 住、居所 115 MILANO DRIVE，BEAR，DE 19701，U.SA. 2.美國德拉瓦州威明頓市格林伍街438號 438 GREENWOOD DRIVE, WILMINGTON, DE 19808, U.S.A. 3·美國賓州哈利斯維爾市奇西路193號 193 KINSEY ROAD, HARLEYSVILLE, PA 19438, U.S.A 裝 f 名 (名稱） 美商羅德爾控股公司 RODEL HOLDINGS, INC. 國 籍 美國U.S.A. 線 三、申請人 美國德拉瓦州威靈頓市1300區市場北街1105號 1105 NORTH MARKET STREET, SUITE ,1300 WILMINGTON，DE 19899, U.SA. 康瑞德H.凱丁 KONRAD H. KAEDING 本紙張尺度適用中國國家標準(CNS) A4規格(21〇x297公釐)Polishing composition containing organic polymer particles POLISHING COMPOSITIONS HAVING ORGANIC POLYMER PARTICLES Name1 Wesley D. Costas 2. WESLEY D. COSTAS 2. CRAIG D. LACK 3. Daniel A. Souscy DANIEL A. SAUCY Nationality 1.2 USA USA 3. Switzerland SWITZERLAND person 1. 115 Milano Street, Bell City, Delaware, USA 115 MILANO DRIVE, BEAR, DE 19701, U.SA. 2. Delaware, USA 438 GREENWOOD DRIVE, WILMINGTON, DE 19808, USA 3. 193 KINSEY ROAD, HARLEYSVILLE, PA 19438, USA 193 KINSEY ROAD, HARLEYSVILLE, PA 19438, USA RODEL HOLDINGS, INC. Nationality USA USA Line III. Applicant 1105 NORTH MARKET STREET, SUITE, 1300 WILMINGTON, DE 19899, U.SA., 1105 Market North Street, 1300 District, Wellington, Delaware, USA Konrad H. Kaeding KONRAD H. KAEDING This paper size is applicable to the Chinese National Standard (CNS) A4 size (21 × 297 mm)
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Publication number Priority date Publication date Assignee Title
CN105308129A (en) * 2013-04-25 2016-02-03 日本嘉柏微电子株式会社 Slurry composition and method of substrate polishing

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