JPH10242509A - Side plane emission display device and its manufacture - Google Patents
Side plane emission display device and its manufactureInfo
- Publication number
- JPH10242509A JPH10242509A JP4621797A JP4621797A JPH10242509A JP H10242509 A JPH10242509 A JP H10242509A JP 4621797 A JP4621797 A JP 4621797A JP 4621797 A JP4621797 A JP 4621797A JP H10242509 A JPH10242509 A JP H10242509A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- light
- electrodes
- electrode forming
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、配線基板に固定さ
れる支持部材において、発光素子がマウントされるマウ
ント面と、電極が形成される電極形成面とが、互いに垂
直である側面発光表示装置およびその製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lateral light emitting display device in which a mounting surface on which a light emitting element is mounted and an electrode forming surface on which electrodes are formed are perpendicular to each other in a support member fixed to a wiring board. And its manufacturing method.
【０００２】[0002]
【従来の技術】図７は、実開平４−２８６８７に記載さ
れる側面発光表示装置の支持部材１を示す断面図であ
る。支持部材１は、図示されない配線基板に半田付け固
定される。支持部材１のマウント面２には、めっき付け
された配線３，４が設けられる。配線３上には発光素子
５がＡｇペーストによって取着され、配線４は発光素子
５にワイヤボンディングされる。支持部材１の電極形成
面６はマウント面２に垂直に配置され、電極形成面６の
一部には電極７，８が形成されている。電極７は配線３
に接続され、電極８は配線４に接続される。このように
して、側面発光表示装置が構成される。2. Description of the Related Art FIG. 7 is a cross-sectional view showing a supporting member 1 of a side emission display described in Japanese Utility Model Laid-Open No. 4-28687. The support member 1 is fixed by soldering to a wiring board (not shown). On the mounting surface 2 of the support member 1, plated wirings 3 and 4 are provided. The light emitting element 5 is attached to the wiring 3 with an Ag paste, and the wiring 4 is wire-bonded to the light emitting element 5. The electrode forming surface 6 of the support member 1 is arranged perpendicular to the mounting surface 2, and electrodes 7 and 8 are formed on a part of the electrode forming surface 6. Electrode 7 is wiring 3
, And the electrode 8 is connected to the wiring 4. Thus, a side emission display device is configured.
【０００３】支持部材１を含む側面発光表示装置は、配
線基板上の配線から電極７，８、配線３，４を通じて発
光素子５に電圧が印加されて、発光する。In the side emission display device including the supporting member 1, a voltage is applied to the light emitting element 5 from the wiring on the wiring board through the electrodes 7, 8 and the wirings 3, 4, thereby emitting light.
【０００４】[0004]
【発明が解決しようとする課題】実開平４−２８６８７
の側面発光表示装置では、配線３，４や電極７，８は比
較的その幅が狭く、面積が小さい。特に、電極７，８の
面積が小さいので、電極７，８に半田付けして支持部材
１を配線基板に固定しても、充分な固定強度が得られ
ず、不安定である。SUMMARY OF THE INVENTION
In the side emission display device, the widths of the wirings 3 and 4 and the electrodes 7 and 8 are relatively small and the area is small. In particular, since the area of the electrodes 7 and 8 is small, even if the supporting member 1 is fixed to the wiring board by soldering to the electrodes 7 and 8, sufficient fixing strength cannot be obtained, and it is unstable.
【０００５】本発明の目的は、支持部材を強固に固定で
き、簡単に製造できる側面発光表示装置およびその製造
方法を提供することである。SUMMARY OF THE INVENTION An object of the present invention is to provide a side emission display device which can firmly fix a support member and can be easily manufactured, and a method of manufacturing the same.
【０００６】[0006]
【課題を解決するための手段】本発明は、発光素子と、
発光素子がマウントされるマウント面、およびマウント
面に垂直で複数の電極が形成された電極形成面を有する
光反射性の支持部材と、電極形成面に対向し、電極の半
田付けによって支持部材が固定される配線基板とを備え
る側面発光表示装置において、前記電極は、支持部材の
電極形成面およびその稜を覆うように、電極形成面と電
極形成面に隣接する面とに形成されることを特徴とする
側面発光表示装置である。本発明に従えば、電極は支持
部材の電極形成面の中央部分から、半田付けのために最
も重要な電極形成面の周縁部分、電極形成面の稜、さら
には稜を越えて電極形成面に隣接する面にまで及ぶの
で、半田付けによる固定の強度を向上することができ
る。つまり、電極の面積が拡大されることで、半田の塗
布される面積も拡大されて、固定強度が増大する。これ
とともに、電極が電極形成面に垂直な隣の面にまで及ぶ
ことで、固定強度が方向に依存することが少なくなり、
半田付けによる固定がより安定化する。このように、半
田付けの強度が向上することによって、支持部材の位置
ずれやこれによる発光素子の位置ずれなどが低減され、
発光位置の精度を向上することができ、表示の信頼性を
向上することができる。The present invention provides a light emitting device,
A light-reflective support member having a mounting surface on which the light-emitting element is mounted, and an electrode forming surface having a plurality of electrodes formed perpendicularly to the mounting surface, and a supporting member facing the electrode forming surface and soldering the electrodes. In a side emission display device including a fixed wiring substrate, the electrodes are formed on an electrode formation surface and a surface adjacent to the electrode formation surface so as to cover the electrode formation surface of the support member and its ridges. The feature is a side emission display device. According to the present invention, the electrode extends from the central portion of the electrode forming surface of the support member to the peripheral portion of the electrode forming surface which is most important for soldering, the ridge of the electrode forming surface, and even beyond the ridge to the electrode forming surface. Since it extends to the adjacent surface, the strength of fixing by soldering can be improved. That is, by increasing the area of the electrode, the area to which the solder is applied is also increased, and the fixing strength is increased. At the same time, since the electrode extends to the next surface perpendicular to the electrode forming surface, the fixing strength is less dependent on the direction,
Fixation by soldering becomes more stable. As described above, by improving the strength of soldering, the displacement of the support member and the displacement of the light emitting element due to the displacement are reduced,
The accuracy of the light emitting position can be improved, and the reliability of display can be improved.
【０００７】また本発明は、前記電極形成面は、凹所を
有することを特徴とする。本発明に従えば、電極形成面
が凹所を有することによって、電極の面積がさらに拡大
されるので、半田が凹所に浸入することで、電極と半田
との接触面積も拡大され、さらに強固に支持部材を固定
することができる。Further, the present invention is characterized in that the electrode forming surface has a recess. According to the present invention, since the electrode forming surface has the recess, the area of the electrode is further enlarged. Therefore, by the solder penetrating into the recess, the contact area between the electrode and the solder is also increased, and the solder is further strengthened. Can be fixed to the support member.
【０００８】また本発明は、前記マウント面上には、全
面にわたってめっき付けされた光反射層が形成されてい
ることを特徴とする。本発明に従えば、発光素子からマ
ウント面に到達する光は、マウント面全面にわたって形
成された光反射層によって反射されるので、発光素子の
背面側への光をすべて前面側への光に加えることがで
き、前面側から見たときの光の出力が向上され、表示の
精度をさらに向上することができる。Further, the present invention is characterized in that a light reflecting layer plated over the entire surface is formed on the mounting surface. According to the present invention, since the light reaching the mounting surface from the light emitting element is reflected by the light reflecting layer formed over the entire mounting surface, all the light to the back side of the light emitting element is added to the light to the front side. As a result, the light output when viewed from the front side is improved, and the display accuracy can be further improved.
【０００９】また本発明は、基板の表面にめっき付けし
て光反射層を形成する工程と、次に基板の表面に複数の
発光素子をマウントする工程と、発光素子ごとに基板を
分断する工程と、次に発光素子がマウントされたマウン
ト面に垂直な基板の面のうち、いずれか単一の面にめっ
き付けして複数の電極を形成する工程と、配線基板に電
極を半田付けする工程とを含むことを特徴とする側面発
光表示装置の製造方法である。本発明に従えば、基板を
分断した後に電極を形成するので、基板の分断後にしか
現れない分断面に簡単に電極を形成できる。また、分断
される前に、基板の表面にまとめてめっき付けして光反
射層を形成するので、分断された基板ごとに光反射層を
形成する必要がなく、製造工程を簡略化することができ
る。よって、製造時間が短縮され、製造コストを低減す
ることができる。Further, the present invention provides a step of plating a surface of a substrate to form a light reflecting layer, a step of mounting a plurality of light emitting elements on the surface of the substrate, and a step of dividing the substrate for each light emitting element. Forming a plurality of electrodes by plating on any one of the surfaces of the substrate perpendicular to the mounting surface on which the light emitting element is mounted, and soldering the electrodes to the wiring substrate And a method for manufacturing a side-emitting display device. According to the present invention, since the electrodes are formed after the substrate is divided, the electrodes can be easily formed in a section that appears only after the substrate is divided. In addition, since the light reflecting layer is formed by plating on the surface of the substrate before being divided, it is not necessary to form a light reflecting layer for each divided substrate, and the manufacturing process can be simplified. it can. Therefore, the manufacturing time can be shortened, and the manufacturing cost can be reduced.
【００１０】また本発明は、前記光反射層を形成する前
に、基板に表面処理を施すことによって、光反射層およ
び電極を形成する領域をめっき付け可能な表面とし、そ
れらを除く領域をめっき付け不可能な表面とする工程を
含むことを特徴とする。本発明に従えば、光反射層およ
び電極を形成するめっき付けのときに、パターン形成の
必要がない。つまり、基板の表面を粗面化したり、基板
の表面上に新たな膜を形成するなどの表面処理によっ
て、めっき付けすべき領域をめっき付け可能な表面と
し、それ以外の領域をめっき付け不可能な表面とした
後、めっき付けを行うので、基板表面のめっき付けの可
否によって、自動的にパターン形成される。よって、パ
ターン形成のためのレジストの塗布やエッチング、さら
には残留レジストの除去など、様々な繁雑な工程を省略
でき、製造工程をさらに簡略化でき、製造コストを低減
できる。Further, according to the present invention, the surface of the substrate is subjected to a surface treatment before the light reflecting layer is formed, so that the region where the light reflecting layer and the electrode are formed can be plated. The method is characterized by including a step of making the surface unfittable. According to the present invention, there is no need to form a pattern when plating to form the light reflection layer and the electrode. In other words, the surface to be plated is made a plateable surface by surface treatment such as roughening the surface of the substrate or forming a new film on the surface of the substrate, and other regions cannot be plated. Since plating is performed after the surface is formed, a pattern is automatically formed depending on whether or not plating is possible on the substrate surface. Therefore, various complicated steps such as application and etching of a resist for forming a pattern and removal of a residual resist can be omitted, the manufacturing process can be further simplified, and the manufacturing cost can be reduced.
【００１１】また本発明は、前記基板を分断する前に、
基板の分断ラインに沿って貫通孔を設けることを特徴と
する。本発明に従えば、基板を分断するときに、貫通孔
が分断されて基板ごとの分断面には凹所が現れ、上記の
ように凹所に浸入する半田が基板を強固に固定するよう
な構造を簡単に実現することができる。また、貫通孔は
分断される前に一括して形成されるので、分断された基
板ごとに凹所を形成する必要がない。よって、製造工程
を簡略化でき、製造コストを低減できる。Further, the present invention provides a method for manufacturing a semiconductor device, comprising the steps of:
A through hole is provided along the dividing line of the substrate. According to the present invention, when the substrate is divided, the through hole is divided, and a recess appears in the cross section of each substrate, and the solder penetrating into the recess firmly fixes the substrate as described above. The structure can be easily realized. In addition, since the through holes are formed collectively before the division, there is no need to form a recess for each divided substrate. Therefore, the manufacturing process can be simplified, and the manufacturing cost can be reduced.
【００１２】[0012]
【発明の実施の形態】図１は本発明の一実施形態である
側面発光表示装置１０を示す斜視図であり、図２はその
平面図であり、図３（ａ）は図２の切断面線Ａ−Ａから
見た断面図であり、図３（ｂ）は図２の切断面線Ｂ−Ｂ
から見た断面図である。側面発光表示装置１０は、発光
素子１１、支持部材１２、および配線基板１３を備え
る。発光素子１１は、発光ダイオードなどのように光源
となる素子である。FIG. 1 is a perspective view showing a side emission display device 10 according to an embodiment of the present invention, FIG. 2 is a plan view thereof, and FIG. 3 (a) is a sectional view of FIG. FIG. 3B is a sectional view taken along line AA, and FIG. 3B is a sectional view taken along line BB of FIG.
It is sectional drawing seen from. The side emission display device 10 includes a light emitting element 11, a support member 12, and a wiring board 13. The light emitting element 11 is an element serving as a light source, such as a light emitting diode.
【００１３】支持部材１２は電気絶縁性の樹脂から成
り、マウント面２１および電極形成面２２を有してい
る。マウント面２１および電極形成面２２は、互いに垂
直である。マウント面２１は窪み２３を有しており、発
光素子１１はこのマウント面２１の窪み２３の底にマウ
ントされ、窪み２３は透光性の樹脂５７で封止される。
樹脂５７は、エポキシ、シリコン、ウレタンなどであ
る。また、マウント面２１は全面にわたって、めっき付
けされた光反射層２４，２５に覆われ、窪み２３も光反
射層２４，２５に覆われる。ただし、光反射層２４，２
５は、互いに隔離されて電気的に絶縁されており、隔離
された部分だけは覆われない。光反射層２４，２５は、
最下層のＣｕからＮｉ、Ａｕの順に積層された３層構造
になっている。なお、発光素子１１のマウントは、発光
素子１１が導電ペーストによって光反射層２４に接続さ
れ、光反射層２５にワイヤボンディングされることによ
って行われる。The support member 12 is made of an electrically insulating resin and has a mounting surface 21 and an electrode forming surface 22. The mounting surface 21 and the electrode forming surface 22 are perpendicular to each other. The mounting surface 21 has a depression 23, and the light emitting element 11 is mounted on the bottom of the depression 23 of the mounting surface 21, and the depression 23 is sealed with a translucent resin 57.
The resin 57 is epoxy, silicon, urethane, or the like. The mounting surface 21 is covered over the entire surface by the plated light reflection layers 24 and 25, and the depression 23 is also covered by the light reflection layers 24 and 25. However, the light reflection layers 24, 2
5 are isolated from each other and are electrically insulated, and only the isolated portions are not covered. The light reflection layers 24 and 25
It has a three-layer structure in which the lowermost layer is stacked from Cu to Ni and then Au. The mounting of the light emitting element 11 is performed by connecting the light emitting element 11 to the light reflecting layer 24 with a conductive paste and wire bonding the light emitting element 11 to the light reflecting layer 25.
【００１４】支持部材１２の電極形成面２２には、めっ
き付けされた電極２６，２７が形成される。電極２６，
２７は、互いに隔離されて電気的に絶縁され、それぞれ
光反射層２４，２５に接続されて電気的に導通してい
る。また、電極２６，２７は光反射層２４，２５と同じ
３層構造を有し、光反射層２４，２５と一体化してお
り、電極形成面２２周縁の稜３１，３２を覆っている。
電極形成面２２に隣接する他の面にも、同じ３層構造の
めっきが施されており、電極２６，２７と一体化して他
の稜３３〜３６をも覆っている。さらに電極２６，２７
は、それぞれ半円筒状の凹所２８，２９（凹所２９につ
いては図６参照）を有している。On the electrode forming surface 22 of the support member 12, plated electrodes 26 and 27 are formed. Electrode 26,
Reference numerals 27 are electrically isolated from each other and electrically connected to the light reflection layers 24 and 25, respectively. The electrodes 26 and 27 have the same three-layer structure as the light reflection layers 24 and 25, are integrated with the light reflection layers 24 and 25, and cover the ridges 31 and 32 around the electrode forming surface 22.
The other surface adjacent to the electrode forming surface 22 is also plated with the same three-layer structure, and is integrated with the electrodes 26 and 27 to cover the other ridges 33 to 36. Further, electrodes 26 and 27
Have concave portions 28 and 29 each having a semi-cylindrical shape (see FIG. 6 for the concave portion 29).
【００１５】配線基板１３は、表面に金属の配線４１，
４２を有しており、配線４１，４２の先端には金属のパ
ッド４３，４４がそれぞれ形成される。パッド４３，４
４には、支持部材１２の電極２６，２７が半田付けされ
る。The wiring board 13 has metal wirings 41,
42, and metal pads 43, 44 are formed at the tips of the wirings 41, 42, respectively. Pad 43, 4
4, the electrodes 26 and 27 of the support member 12 are soldered.
【００１６】側面発光表示装置１０では、配線４１，４
２からパッド４３，４４、半田４５，４６、および光反
射層２４，２５を通じて印加された電圧によって、発光
素子１１が発光する。発光素子１１からの光は、あらゆ
る方向に放射される。発光素子１１がマウント面２１の
窪み２３の底に配置されているので、発光素子１１の背
面側や側面側への光は、窪み２３の表面で反射して方向
Ｚへ向かう。結局、側面発光表示装置１０全体として
は、方向Ｚに発光することになる。In the side emission display device 10, the wirings 41, 4
The light emitting element 11 emits light by the voltage applied from the second through the pads 43 and 44, the solders 45 and 46, and the light reflecting layers 24 and 25. Light from the light emitting element 11 is emitted in all directions. Since the light emitting element 11 is disposed at the bottom of the recess 23 of the mounting surface 21, light toward the back side or side surface of the light emitting element 11 is reflected on the surface of the recess 23 and travels in the direction Z. As a result, the side emission display 10 emits light in the direction Z as a whole.
【００１７】このように、電極２６は稜３１，３３，３
４を覆うほどに広く形成され、電極２７は稜３２，３
５，３６を覆うほどに広く形成されるので、半田４５，
４６を広く塗布することができ、半田付けの強度を向上
することができる。また、半田４５，４６は稜３１〜３
６を越えて電極形成面２２に隣接するマウント面２１な
どにも接触するので、支持部材１２はあらゆる方向へ引
っ張られて安定する。さらに、凹所２８，２９によっ
て、それぞれ電極２６，２７の面積が拡大され、半田４
５，４６がそれぞれ凹所２８，２９に浸入するので、さ
らに半田付けの強度を向上することができる。As described above, the electrode 26 has the edges 31, 33, 3
4 are formed so as to cover the ridges 32, 3
5 and 36, the solder 45,
46 can be widely applied, and the strength of soldering can be improved. Also, the solders 45 and 46 are ridges 31 to 3.
Since the support member 12 contacts the mount surface 21 and the like adjacent to the electrode formation surface 22 beyond 6, the support member 12 is pulled in all directions and is stabilized. Further, the areas of the electrodes 26 and 27 are enlarged by the recesses 28 and 29, respectively.
5, 5 penetrate into the recesses 28, 29, respectively, so that the soldering strength can be further improved.
【００１８】また、支持部材２４，２５はマウント面２
１全面にわたって形成され、光学素子１１は窪み２３の
底に配置されるので、光学素子１１からの光を効率良く
Ｚ方向に集めることができる。さらに、光反射層２４，
２５の最上層を反射率の良いＡｕとするので、さらに効
率良くＺ方向に集光できる。The support members 24 and 25 are mounted on the mounting surface 2.
The light from the optical element 11 can be efficiently collected in the Z direction because the optical element 11 is formed over the entire surface and is disposed at the bottom of the depression 23. Further, the light reflection layer 24,
Since the uppermost layer of the layers 25 is made of Au having a high reflectivity, the light can be more efficiently condensed in the Z direction.
【００１９】図４は図１の側面発光表示装置１０の製造
工程を示す平面図であり、図５はその断面図であり、図
６はその斜視図である。図４（ａ），図５（ａ）に示す
ように、２成分の射出成型によって、短冊状の樹脂部５
１，５２を交互に並べて面状になった基板５３を形成す
る。樹脂部５１は、めっき付け可能な電気絶縁性の樹脂
から成る。樹脂部５２は、めっき付け不可能な電気絶縁
性の樹脂から成る。樹脂部５２は樹脂部５１に比べて細
く、また樹脂部５２の裏面は表面に比べて細く成型され
る。成型のときに、基板５３の表面に複数の窪み２３が
できるようにし、樹脂部５２も窪み２３に含まれるよう
にする。FIG. 4 is a plan view showing a manufacturing process of the side emission display device 10 of FIG. 1, FIG. 5 is a sectional view thereof, and FIG. 6 is a perspective view thereof. As shown in FIGS. 4 (a) and 5 (a), a strip-shaped resin portion 5 is formed by two-component injection molding.
The substrates 53 are alternately arranged to form a planar substrate 53. The resin portion 51 is made of an electrically insulating resin that can be plated. The resin portion 52 is made of an electrically insulating resin that cannot be plated. The resin portion 52 is formed thinner than the resin portion 51, and the back surface of the resin portion 52 is formed thinner than the front surface. At the time of molding, a plurality of depressions 23 are formed on the surface of the substrate 53, and the resin portion 52 is also included in the depressions 23.
【００２０】なお、樹脂部５１，５２については、液晶
ポリマ（ＬＣＰ）、ＰＰＳ（Polyphenylen sulfide）、
エポキシ、アクリルなどの樹脂のうち、異なる２つの材
料を成型し、どちらか一方の材料の表面だけを選択的に
粗面化できる溶液を用いるなどして、めっき付けの可否
を実現する。また、同じ樹脂材料を用いても、所定の触
媒を混入したものと混入してないものを成型し、触媒入
りの樹脂の表面だけを選択的に粗面化できる溶液を用い
ることによっても、めっき付けの可否を実現可能であ
る。The resin parts 51 and 52 are made of liquid crystal polymer (LCP), PPS (Polyphenylen sulfide),
Among the resins such as epoxy and acrylic, two different materials are molded and a plating solution is realized by using a solution capable of selectively roughening only the surface of one of the materials. In addition, even if the same resin material is used, it is also possible to mold a resin mixed with a predetermined catalyst and a resin not mixed, and to use a solution capable of selectively roughening only the surface of the resin containing the catalyst. It is feasible to determine whether or not to attach.
【００２１】次に、基板５３の面上で樹脂部５２の長手
のＸ方向に垂直なＹ方向に、かつ窪み２３に重ならない
ように、基板５３中に基板５３の面と平行な複数の貫通
孔５４を設ける。Next, a plurality of through holes parallel to the surface of the substrate 53 are formed on the surface of the substrate 53 in the Y direction perpendicular to the longitudinal X direction of the resin portion 52 so as not to overlap the recesses 23. A hole 54 is provided.
【００２２】次に、図５（ｂ）に示すように、基板５３
の表裏面にめっき付けして、表面にめっき層５５を形成
し、裏面にめっき層５６を形成する。このとき、樹脂部
５１はめっき付けが可能であるので、露出している表裏
面にそれぞれめっき層５５，５６が形成される。樹脂部
５２はめっき付けが不可能であるので、露出していても
めっき付けされない。めっきについては、最初に無電解
めっき法によってＣｕを薄付けして、その後に電解めっ
き法であるバレルめっき法によって、Ｃｕを厚付けす
る。Ｃｕ層上には、続けてバレルめっき法によってＮｉ
を厚付けし、さらにＡｕを厚付けする。Next, as shown in FIG.
To form a plating layer 55 on the front surface and a plating layer 56 on the rear surface. At this time, since the resin portion 51 can be plated, plating layers 55 and 56 are formed on the exposed front and back surfaces, respectively. Since the resin portion 52 cannot be plated, it is not plated even if it is exposed. Regarding plating, Cu is first thinned by an electroless plating method, and then Cu is thickened by a barrel plating method which is an electrolytic plating method. On the Cu layer, Ni plating was subsequently performed by barrel plating.
, And then Au.
【００２３】次に、図４（ｂ），図５（ｃ）に示すよう
に、窪み２３ごとに発光素子１１をマウントする。マウ
ントは、窪み２３内で２つに隔離されるめっき層５５の
一方に導電ペーストで接着して、他方にワイヤボンディ
ングすることによって行われる。発光素子１１のマウン
トの後に、窪み２３を透明な樹脂５７で封止する。Next, as shown in FIG. 4B and FIG. 5C, the light emitting element 11 is mounted for each of the depressions 23. The mounting is performed by bonding a conductive layer to one of the two plating layers 55 isolated in the recess 23 and bonding the other to the other. After mounting the light emitting element 11, the depression 23 is sealed with a transparent resin 57.
【００２４】次に、図４（ｂ）に示すＸ方向のダイシン
グラインＸ１、およびＹ方向のダイシングラインＹ１に
沿って、基板５３をダイスして分断する。このとき、ダ
イシングラインＸ１に沿うダイスによって、貫通孔５４
も分断されなければならない。逆に、上記の貫通孔５４
はダイシングラインＸ１に沿って形成しなければならな
い。このダイスによって、分断された各基板５３ａおよ
びその上の形成物は図６（ａ）に示すような構造とな
る。図６（ａ）に示すように、基板５３ａのＹ方向に露
出する両端面には、半円筒状の凹所６５，６６が形成さ
れている。この凹所６５，６６は、貫通孔５４を軸方向
に沿って分割することによってできたものである。また
このダイスによって、めっき層５５は互いに隔離された
光反射層２４，２５になる。光反射層２４，２５が形成
された面が図１のマウント面２１に対応する。マウント
面２１に垂直な分断面６１〜６４には、樹脂部５１が露
出している。Next, the substrate 53 is diced along the dicing line X1 in the X direction and the dicing line Y1 in the Y direction shown in FIG. At this time, the through-hole 54 is formed by the dice along the dicing line X1.
Must also be divided. Conversely, the above-described through hole 54
Must be formed along the dicing line X1. Each of the substrates 53a separated by the dice and the formation thereon has a structure as shown in FIG. 6A. As shown in FIG. 6A, semi-cylindrical recesses 65 and 66 are formed on both end surfaces of the substrate 53a exposed in the Y direction. The recesses 65 and 66 are formed by dividing the through hole 54 along the axial direction. Further, the plating layer 55 becomes the light reflection layers 24 and 25 isolated from each other by the dice. The surface on which the light reflecting layers 24 and 25 are formed corresponds to the mounting surface 21 in FIG. The resin portion 51 is exposed at the dividing planes 61 to 64 perpendicular to the mounting surface 21.
【００２５】次に、図６（ｂ）に示すように、マウント
面２１に垂直な分断面６１〜６４にめっき付けする。め
っきは、上記のめっき層５５，５６と同様にして、３層
構造のものが形成される。分断面６１は図１の電極形成
面２２に対応し、電極形成面２２にはこのめっき付けに
よって電極２６，２７が形成される。電極２６は凹所６
５上に形成されたので凹所２８を有し、電極２７は凹所
６６上に形成されたので凹所２９を有する。こうして、
光反射性の支持部材１２が完成する。Next, as shown in FIG. 6B, plating is performed on the divided sections 61 to 64 perpendicular to the mounting surface 21. As for plating, a three-layer structure is formed in the same manner as the plating layers 55 and 56 described above. The dividing surface 61 corresponds to the electrode forming surface 22 in FIG. 1, and the electrodes 26 and 27 are formed on the electrode forming surface 22 by this plating. Electrode 26 is recess 6
The electrode 27 has a recess 29 because it is formed on the recess 66. Thus,
The light-reflective support member 12 is completed.
【００２６】図４〜図６に示した製造工程によって形成
された支持部材１２は、配線基板１３上にリフロ半田付
け法によって固定される。つまり、電極２６，２７が配
線基板１３に半田付けされて、図１の側面発光表示装置
１０が完成する。The support member 12 formed by the manufacturing steps shown in FIGS. 4 to 6 is fixed on the wiring board 13 by reflow soldering. That is, the electrodes 26 and 27 are soldered to the wiring board 13, and the side emission display device 10 of FIG. 1 is completed.
【００２７】上記の製造工程によれば、基板５３を分断
した後に電極２６，２７を形成するので、分断後にしか
現れない分断面６１に簡単に電極２６，２７を形成でき
る。また、分断される前に、基板５３の表面にまとめて
めっき付けして光反射層２４，２５を形成するので、分
断された基板５３ａごとに光反射層２４，２５を形成す
る必要がなく、製造工程を簡略化することができる。According to the above-described manufacturing process, since the electrodes 26 and 27 are formed after the substrate 53 is divided, the electrodes 26 and 27 can be easily formed on the divided section 61 which appears only after the division. Further, before the division, the surfaces of the substrate 53 are collectively plated to form the light reflection layers 24 and 25. Therefore, it is not necessary to form the light reflection layers 24 and 25 for each divided substrate 53a. The manufacturing process can be simplified.
【００２８】また、めっき付け可能な樹脂部５１と、め
っき付け不可能な樹脂部５２とを所定のパターンに組み
合わせて基板５３を成型するので、基板５３表面のめっ
き付けのときには、エッチングなどによるパターン形成
の必要がない。Further, since the substrate 53 is formed by combining the resin portion 51 that can be plated and the resin portion 52 that cannot be plated into a predetermined pattern, when plating the surface of the substrate 53, the pattern is formed by etching or the like. There is no need for formation.
【００２９】さらに、基板５３を分断するときに、貫通
孔５４が分断されて基板５３ａごとの分断面６１には凹
所６５，６６が現れるので、図３（ａ）のように、凹所
２８に浸入する半田４５が支持部材１２を強固に固定す
るような構造を簡単に実現することができる。また、貫
通孔５４は分断される前に一括して形成されるので、分
断された基板５３ａごとに凹所を形成する必要がない。Further, when the substrate 53 is divided, the through holes 54 are divided and the concave portions 65 and 66 appear in the divided section 61 for each substrate 53a. Therefore, as shown in FIG. The structure in which the solder 45 penetrating into the support member 12 firmly fixes the support member 12 can be easily realized. Further, since the through holes 54 are formed at a time before being divided, it is not necessary to form a recess for each divided substrate 53a.
【００３０】[0030]
【発明の効果】以上のように本発明によれば、半田付け
による固定の強度を向上することができ、支持部材の位
置ずれやこれによる発光素子の位置ずれなどが低減さ
れ、発光位置の精度を向上することができ、表示の信頼
性を向上することができる。As described above, according to the present invention, the strength of fixing by soldering can be improved, the displacement of the support member and the displacement of the light emitting element due to this can be reduced, and the accuracy of the light emitting position can be reduced. Can be improved, and display reliability can be improved.
【００３１】また本発明によれば、電極の凹所によっ
て、さらに強固に支持部材を固定することができる。Further, according to the present invention, the support member can be more firmly fixed by the recess of the electrode.
【００３２】さらに本発明によれば、前面側から見たと
きの光の出力が向上され、表示の精度を向上することが
できる。Further, according to the present invention, the light output when viewed from the front side is improved, and the display accuracy can be improved.
【００３３】さらに本発明によれば、基板の分断後にし
か現れない分断面に簡単に電極を形成できる。また、分
断された基板ごとに光反射層を形成する必要がなく、製
造工程を簡略化することができる。よって、製造時間が
短縮され、製造コストを低減することができる。Further, according to the present invention, it is possible to easily form an electrode in a section that appears only after the substrate is divided. Further, it is not necessary to form a light reflection layer for each of the divided substrates, so that the manufacturing process can be simplified. Therefore, the manufacturing time can be shortened, and the manufacturing cost can be reduced.
【００３４】さらに本発明によれば、２種類の樹脂を成
型することで、めっき付けのときにエッチングなどによ
るパターン形成の必要がなくなり、製造工程をさらに簡
略化できる。Further, according to the present invention, by molding two kinds of resins, it is not necessary to form a pattern by etching or the like at the time of plating, and the manufacturing process can be further simplified.
【００３５】さらに本発明によれば、基板に貫通孔を形
成することで、電極の凹所を簡単に形成することがで
き、製造工程を簡略化できる。Further, according to the present invention, by forming a through hole in the substrate, the recess of the electrode can be easily formed, and the manufacturing process can be simplified.
【図１】本発明の一実施形態である側面発光表示装置１
０を示す斜視図である。FIG. 1 is a side view light emitting display device 1 according to an embodiment of the present invention.
FIG.
【図２】図１の側面発光表示装置１０の平面図である。FIG. 2 is a plan view of the side emission display device 10 of FIG.
【図３】図３（ａ）は図２の側面発光表示装置１０を切
断面線Ａ−Ａから見た断面図であり、図３（ｂ）は図２
の側面発光表示装置１０を切断面線Ｂ−Ｂから見た断面
図である。FIG. 3A is a cross-sectional view of the side emission display device 10 of FIG. 2 as viewed from a cutting line AA, and FIG.
FIG. 3 is a cross-sectional view of the side emission display device 10 viewed from a cutting plane line BB.
【図４】図１の側面発光表示装置１０の製造工程を段階
的に示す平面図である。FIG. 4 is a plan view showing stepwise the manufacturing process of the side emission display device 10 of FIG. 1;
【図５】図１の側面発光表示装置１０の製造工程を段階
的に示す断面図である。FIG. 5 is a sectional view showing stepwise the manufacturing process of the side emission display device 10 of FIG. 1;
【図６】図１の側面発光表示装置１０の製造工程を段階
的に示す斜視図である。FIG. 6 is a perspective view illustrating stepwise the manufacturing process of the side emission display device 10 of FIG. 1;
【図７】従来技術である側面発光表示装置の支持部材１
の斜視図である。FIG. 7 shows a supporting member 1 of a conventional side emission display device.
It is a perspective view of.
１０ 側面発光表示装置 １１ 発光素子 １２ 支持部材 １３ 配線基板 ２１ マウント面 ２２ 電極形成面 ２４，２５ 光反射層 ２６，２７ 電極 ２８，２９ 凹所 ３１〜３６ 稜 ４５，４６ 半田 ５１，５２ 樹脂部 ５３ 基板 ５４ 貫通孔 ６１ 分断面 DESCRIPTION OF SYMBOLS 10 Side emission display device 11 Light emitting element 12 Support member 13 Wiring board 21 Mounting surface 22 Electrode formation surface 24, 25 Light reflection layer 26, 27 Electrode 28, 29 Depression 31-36 Ridge 45, 46 Solder 51, 52 Resin part 53 Substrate 54 Through hole 61 section
Claims (6)
面に垂直で複数の電極が形成された電極形成面を有する
光反射性の支持部材と、 電極形成面に対向し、電極の半田付けによって支持部材
が固定される配線基板とを備える側面発光表示装置にお
いて、 前記電極は、支持部材の電極形成面およびその稜を覆う
ように、電極形成面と電極形成面に隣接する面とに形成
されることを特徴とする側面発光表示装置。A light-emitting element, a light-reflecting support member having a mounting surface on which the light-emitting element is mounted, and an electrode forming surface having a plurality of electrodes formed perpendicularly to the mounting surface; Wherein the electrode is adjacent to the electrode forming surface and the electrode forming surface so as to cover the electrode forming surface and the ridge of the supporting member. A side emission display device characterized by being formed on a surface to be illuminated.
特徴とする請求項１記載の側面発光表示装置。2. The side emission display according to claim 1, wherein the electrode forming surface has a recess.
めっき付けされた光反射層が形成されていることを特徴
とする請求項１記載の側面発光表示装置。3. The side emission display according to claim 1, wherein a light reflection layer plated over the entire surface is formed on the mounting surface.
形成する工程と、 次に基板の表面に複数の発光素子をマウントする工程
と、 発光素子ごとに基板を分断する工程と、 次に発光素子がマウントされたマウント面に垂直な基板
の面のうち、いずれか単一の面にめっき付けして複数の
電極を形成する工程と、 配線基板に電極を半田付けする工程とを含むことを特徴
とする側面発光表示装置の製造方法。4. A step of forming a light reflecting layer by plating on the surface of the substrate, a step of mounting a plurality of light emitting elements on the surface of the substrate, a step of dividing the substrate for each light emitting element, Forming a plurality of electrodes by plating on any one of the surfaces of the substrate perpendicular to the mounting surface on which the light emitting element is mounted, and soldering the electrodes to the wiring substrate A method for manufacturing a side-emitting display device, comprising:
面処理を施すことによって、光反射層および電極を形成
する領域をめっき付け可能な表面とし、それらを除く領
域をめっき付け不可能な表面とする工程を含むことを特
徴とする請求項４記載の側面発光表示装置の製造方法。5. A surface treatment is performed on a substrate before forming the light reflection layer, so that a region where the light reflection layer and the electrode are formed is a plateable surface, and a region other than those is not plateable. 5. The method according to claim 4, further comprising the step of forming a smooth surface.
インに沿って貫通孔を設ける工程を含むことを特徴とす
る請求項４記載の側面発光表示装置の製造方法。6. The method according to claim 4, further comprising the step of providing a through hole along a dividing line of the substrate before dividing the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4621797A JP3472429B2 (en) | 1997-02-28 | 1997-02-28 | Method for manufacturing side-emitting display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4621797A JP3472429B2 (en) | 1997-02-28 | 1997-02-28 | Method for manufacturing side-emitting display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10242509A true JPH10242509A (en) | 1998-09-11 |
| JP3472429B2 JP3472429B2 (en) | 2003-12-02 |
Family
ID=12740948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4621797A Expired - Fee Related JP3472429B2 (en) | 1997-02-28 | 1997-02-28 | Method for manufacturing side-emitting display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3472429B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003234507A (en) * | 2002-02-07 | 2003-08-22 | Koha Co Ltd | Side emission type led lamp |
| EP1597764A1 (en) * | 2003-02-28 | 2005-11-23 | Osram Opto Semiconductors GmbH | Optoelectronic component comprising a housing body which is metallised in a structured manner, method for producing one such component, and method for the structured metallisation of a body containing plastic |
| CN100380205C (en) * | 2004-04-22 | 2008-04-09 | 株式会社日立显示器 | Liquid crystal display device and manufacturing method of the same |
| JP2008546192A (en) * | 2005-05-30 | 2008-12-18 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Casing body and method of manufacturing casing body |
| JP2009032746A (en) * | 2007-07-24 | 2009-02-12 | Harison Toshiba Lighting Corp | Light-emitting device and light-emitting unit |
| US7718451B2 (en) | 2003-02-28 | 2010-05-18 | Osram Opto Semiconductor Gmbh | Method for producing an optoelectronic device with patterned-metallized package body and method for the patterned metalization of a plastic-containing body |
-
1997
- 1997-02-28 JP JP4621797A patent/JP3472429B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003234507A (en) * | 2002-02-07 | 2003-08-22 | Koha Co Ltd | Side emission type led lamp |
| EP1597764A1 (en) * | 2003-02-28 | 2005-11-23 | Osram Opto Semiconductors GmbH | Optoelectronic component comprising a housing body which is metallised in a structured manner, method for producing one such component, and method for the structured metallisation of a body containing plastic |
| JP2006514434A (en) * | 2003-02-28 | 2006-04-27 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Optoelectronic device having a package body with a structured metallization, a method for producing such a device, and a method for applying a structured metallization to a body comprising plastic |
| US7718451B2 (en) | 2003-02-28 | 2010-05-18 | Osram Opto Semiconductor Gmbh | Method for producing an optoelectronic device with patterned-metallized package body and method for the patterned metalization of a plastic-containing body |
| KR101025234B1 (en) * | 2003-02-28 | 2011-04-01 | 오스람 옵토 세미컨덕터스 게엠베하 | Optoelectronic component comprising a housing body which is metallised in a structured manner, method for producing one such component, and method for the structured metallisation of a body containing plastic |
| CN100380205C (en) * | 2004-04-22 | 2008-04-09 | 株式会社日立显示器 | Liquid crystal display device and manufacturing method of the same |
| JP2008546192A (en) * | 2005-05-30 | 2008-12-18 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Casing body and method of manufacturing casing body |
| US8288791B2 (en) | 2005-05-30 | 2012-10-16 | Osram Opto Semiconductors Gmbh | Housing body and method for production thereof |
| US8772065B2 (en) | 2005-05-30 | 2014-07-08 | Osram Opto Semiconductors Gmbh | Housing body and method for production thereof |
| JP2009032746A (en) * | 2007-07-24 | 2009-02-12 | Harison Toshiba Lighting Corp | Light-emitting device and light-emitting unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3472429B2 (en) | 2003-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3472450B2 (en) | Light emitting device | |
| KR100454777B1 (en) | Chip type light emitting diode and method of manufacture thereof | |
| JP5495495B2 (en) | Surface mount type light emitting diode | |
| JP4082544B2 (en) | Back-mounted chip light-emitting device | |
| JP2000183407A (en) | Optical semiconductor device | |
| JPH11163419A (en) | Light-emitting device | |
| JP3642823B2 (en) | Side light emitting device | |
| JP2000323755A (en) | Semiconductor light-emitting device | |
| US20070278483A1 (en) | Light emitting device and method of manufacturing the same | |
| JP4673610B2 (en) | Surface mount type light emitting diode | |
| JP2008053290A (en) | Optical semiconductor device and its manufacturing method | |
| JP3472429B2 (en) | Method for manufacturing side-emitting display device | |
| US8030753B2 (en) | Semiconductor device and method for making the same | |
| US6806506B2 (en) | Semiconductor device having leads provided with interrupter for molten resin | |
| JPH1050734A (en) | Chip type semiconductor | |
| JP7283938B2 (en) | semiconductor light emitting device | |
| JP2001308388A (en) | Chip light-emitting element | |
| JP2006156643A (en) | Surface-mounted light-emitting diode | |
| KR101510474B1 (en) | Light emitting diode package and method for manufacturing the same | |
| JP2535786Y2 (en) | Light emitting display | |
| JP6842485B2 (en) | LED module | |
| JP6620176B2 (en) | Semiconductor device | |
| JP2000036621A (en) | Electrode structure of side-surface electronic component | |
| JP2001068738A (en) | Semiconductor light-emitting device | |
| JPH05114751A (en) | Optical semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080912 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080912 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090912 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090912 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100912 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110912 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120912 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130912 Year of fee payment: 10 |
|
| LAPS | Cancellation because of no payment of annual fees |