JPH10212342A - Epoxy resin composition - Google Patents
Epoxy resin compositionInfo
- Publication number
- JPH10212342A JPH10212342A JP9015732A JP1573297A JPH10212342A JP H10212342 A JPH10212342 A JP H10212342A JP 9015732 A JP9015732 A JP 9015732A JP 1573297 A JP1573297 A JP 1573297A JP H10212342 A JPH10212342 A JP H10212342A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- semiconductor device
- substrate
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、エポキシ樹脂組成
物および樹脂封止型半導体装置、特に半導体装置の片面
にのみ封止樹脂が成形されている半導体装置に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition and a resin-encapsulated semiconductor device, and more particularly to a semiconductor device in which an encapsulating resin is molded on only one surface of the semiconductor device.
【０００２】[0002]
【従来の技術】近年の電子機器のダウンサイジング化・
小型化に伴い、半導体装置は小型・薄型化、高性能化が
進んでいる。従来の半導体装置は、半導体素子とリード
フレームを用い、これらをプリント基板に実装するのに
必要な部位以外は、樹脂で覆うように両面から樹脂封止
されていた。よって、半導体装置小型化の開発は基板と
なるリードフレームと封止樹脂に関することが主であっ
た。封止樹脂の容積を小さく、薄肉化したＴＳＯＰ（シ
ン・スモール・アウトライン・パッケージ）や、多ピン
化に対応したＱＦＰ（クァッド・フラット・パッケー
ジ）などが開発されてきた。2. Description of the Related Art Recent downsizing of electronic devices
Along with miniaturization, semiconductor devices are becoming smaller, thinner, and higher in performance. A conventional semiconductor device uses a semiconductor element and a lead frame, and is resin-sealed from both sides so as to cover with a resin except for a part necessary for mounting these elements on a printed circuit board. Therefore, development of miniaturization of a semiconductor device has mainly been concerned with a lead frame serving as a substrate and a sealing resin. A thin TSOP (Thin Small Outline Package) with a small volume of the sealing resin and a QFP (Quad Flat Package) compatible with a large number of pins have been developed.
【０００３】さらに、半導体装置が占める実装面積を小
さく、高性能化を図るために、半導体装置の基板の背面
に半導体装置とマザーボードを接続する端子を配置した
構造の半導体装置が開発されている。この構造の場合、
封止樹脂は基板の片面のみに成形されるため、従来の両
面成形物とは異なり、半導体装置の反りが発生しやす
い。半導体装置の反り量が大きいと、水平なマザーボー
ドに実装することが困難である。また、片面成形である
ため、基材や半導体素子との接着界面に剥離が発生する
と、サーマルサイクル試験および耐ポップコーン試験で
の故障原因となる。Further, in order to reduce the mounting area occupied by the semiconductor device and improve the performance, a semiconductor device having a structure in which terminals for connecting the semiconductor device and the motherboard are arranged on the back surface of the substrate of the semiconductor device has been developed. With this structure,
Since the sealing resin is molded on only one side of the substrate, unlike a conventional double-sided molded product, the semiconductor device is likely to warp. If the amount of warpage of the semiconductor device is large, it is difficult to mount the semiconductor device on a horizontal motherboard. In addition, because of single-sided molding, if peeling occurs at the bonding interface with the substrate or the semiconductor element, it causes a failure in the thermal cycle test and the popcorn resistance test.
【０００４】[0004]
【発明が解決しようとする課題】したがって、これまで
とは異なる形態の半導体装置に対応した密着性と半導体
装置の反り量低減に優れた封止樹脂を提供する必要があ
る。Accordingly, there is a need to provide a sealing resin which is compatible with semiconductor devices having a different form from that of the prior art and which is excellent in reducing the amount of warpage of the semiconductor device.
【０００５】本発明者らは、基板の片面のみに封止樹脂
が成形されている構造の半導体装置に関して、密着性の
向上、反り量の低減、サーマルサイクル性、および耐ポ
ップコーン性の向上を目的に鋭意検討し、本発明に到達
した。すなわち、本発明の課題は、基板の片面のみに封
止樹脂が成形されている構造の半導体装置に対応した密
着性、半導体装置の反り量低減、サーマルサイクル性、
耐ポップコーン性に優れるエポキシ樹脂組成物、および
該エポキシ樹脂組成物によって封止された半導体装置を
提供することにある。The present inventors have aimed at improving the adhesion, reducing the amount of warpage, improving the thermal cycling properties, and improving the popcorn resistance with respect to a semiconductor device having a structure in which a sealing resin is molded on only one surface of a substrate. The present inventors have made intensive studies and arrived at the present invention. That is, an object of the present invention is to provide an adhesive property corresponding to a semiconductor device having a structure in which a sealing resin is molded on only one surface of a substrate, a reduction in the amount of warpage of the semiconductor device, a thermal cycle property,
An object of the present invention is to provide an epoxy resin composition having excellent popcorn resistance, and a semiconductor device sealed with the epoxy resin composition.
【０００６】[0006]
【課題を解決するための手段】すなわち本発明は、 １．「半導体素子１と、該半導体素子が搭載される基板
２と、エポキシ樹脂組成物３とを具備するもので、該基
板に対して片面にのみ該エポキシ樹脂組成物が成形され
ている半導体装置用のエポキシ樹脂組成物であって、エ
ポキシ樹脂（Ａ）、硬化剤（Ｂ）、無機充填剤（Ｃ）を
含んでなり、該エポキシ樹脂組成物の硬化剤が、水酸基
が直結した芳香族基を２個以上有し、該芳香族基の間に
脂環族基が介在しているフェノール化合物（ｂ）を必須
成分として含有し、無機充填剤がエポキシ樹脂組成物に
対し８５重量％以上〜９５重量％未満であることを特徴
とする半導体封止用エポキシ樹脂組成物。」、 ２．「エポキシ樹脂組成物の硬化物が下記(イ)〜(ハ)の特
性を有するものである前記のエポキシ樹脂組成物。That is, the present invention provides: "For a semiconductor device comprising a semiconductor element 1, a substrate 2 on which the semiconductor element is mounted, and an epoxy resin composition 3, wherein the epoxy resin composition is molded on only one side of the substrate. An epoxy resin composition comprising an epoxy resin (A), a curing agent (B), and an inorganic filler (C), wherein the curing agent of the epoxy resin composition has an aromatic group to which a hydroxyl group is directly connected. A phenolic compound (b) having at least two phenolic compounds having an alicyclic group interposed between the aromatic groups as an essential component, wherein the inorganic filler is at least 85% by weight to 95% by weight of the epoxy resin composition. 1. An epoxy resin composition for encapsulating a semiconductor, characterized in that the content is less than 10% by weight. ""The epoxy resin composition described above, wherein the cured product of the epoxy resin composition has the following properties (a) to (c).
【０００７】(イ)２３℃での曲げ弾性率が、１０ＧＰａ
を超え、３０ＧＰａ以下 (ロ)２３℃からガラス転移温度までの線膨張係数が４×
１０-6〜１０×１０-6／Ｋ (ハ)（２３℃での曲げ弾性率）×（２３℃からガラス転
移温度までの線膨張係数）が２×１０-4ＧＰａ／Ｋ以
下」 ３．「フェノール化合物（ｂ）が、下記構造（Ｖ）また
は（VI）の構造を有するもの、またはそれとアルデヒド
との重合体である前記いずれかに記載のエポキシ樹脂組
成物。(A) The flexural modulus at 23 ° C. is 10 GPa
(B) The linear expansion coefficient from 23 ° C to the glass transition temperature is 4 ×
2. 10 -6 to 10 × 10 -6 / K (c) (Bending elastic modulus at 23 ° C.) × (linear expansion coefficient from 23 ° C. to the glass transition temperature) is 2 × 10 -4 GPa / K or less. "The epoxy resin composition according to any one of the above, wherein the phenolic compound (b) has a structure of the following structure (V) or (VI), or is a polymer thereof with an aldehyde.
【化２】 （式中、炭素原子に結合している水素は、炭素数１〜６
の脂肪族または脂環族基によって置換されていても良
い。）」、 ４．「該エポキシ樹脂組成物がエラストマー（Ｄ）を含
んでなることを特徴とする前記いずれかに記載のエポキ
シ樹脂組成物。」 ５．半導体素子１と、該半導体素子が搭載される基板２
と、該半導体素子を封止するエポキシ樹脂組成物３とを
具備する半導体装置であって、該基板に対して片面にの
み該エポキシ樹脂組成物が成形されており、前記エポキ
シ樹脂組成物が請前記いずれかのエポキシ樹脂組成物の
硬化物である半導体装置。」からなる。Embedded image (Wherein the hydrogen bonded to the carbon atom has 1 to 6 carbon atoms)
May be substituted by an aliphatic or alicyclic group. ) ", 4. 4. The epoxy resin composition according to any one of the above, wherein the epoxy resin composition comprises an elastomer (D). Semiconductor device 1 and substrate 2 on which the semiconductor device is mounted
And an epoxy resin composition 3 for encapsulating the semiconductor element, wherein the epoxy resin composition is molded on only one side of the substrate, and the epoxy resin composition is A semiconductor device which is a cured product of any one of the epoxy resin compositions. ".
【０００８】[0008]
【発明の実施の形態】以下本発明の構成を詳述する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of the present invention will be described below in detail.
【０００９】本発明における半導体装置は、図１または
図２に示すように、半導体素子１と、該半導体素子が搭
載される基板２と、該半導体素子を封止するエポキシ樹
脂組成物３とを具備し、該基板の半導体素子搭載面側で
ある片面にのみエポキシ樹脂組成物３が成形されてい
る。必要に応じて半導体素子１と基板２との間に接着層
４を持つことも可能である。また基板２は通常、基板基
材２ａ、パターン形成された金属配線２ｃ（図１及び図
２ではパターンは図示していない）および外部との電気
的導通をとるために、基板基材２ｂに貫通して部分的に
通電部２ｂが設けられる。また半導体素子１と金属配線
２ｃをつなぐリード配線（図示していない）を設けるこ
ともできる。As shown in FIG. 1 or 2, a semiconductor device according to the present invention comprises a semiconductor element 1, a substrate 2 on which the semiconductor element is mounted, and an epoxy resin composition 3 for encapsulating the semiconductor element. The epoxy resin composition 3 is formed only on one side of the substrate on the side where the semiconductor element is mounted. If necessary, an adhesive layer 4 can be provided between the semiconductor element 1 and the substrate 2. In addition, the substrate 2 usually penetrates through the substrate 2a, the patterned metal wiring 2c (the pattern is not shown in FIGS. 1 and 2), and the substrate 2b in order to establish electrical conduction with the outside. Then, the current supply unit 2b is partially provided. Further, a lead wiring (not shown) connecting the semiconductor element 1 and the metal wiring 2c can be provided.
【００１０】本発明の半導体装置は、基板２上に半導体
素子１が搭載された半導体装置予備装置を準備し、予備
装置を配置した金型内でエポキシ樹脂組成物を成形、硬
化させることにより得られる。成形にあたってエポキシ
樹脂組成物は通常粉末またはタブレット状態のものが使
用される。そして、エポキシ樹脂組成物を、たとえば１
２０〜２５０℃、好ましくは１５０〜２００℃の温度
で、トランスファ成形、インジェクション成形、注型法
などの方法で、成形することによって製造される。また
必要に応じて、追加熱処理（たとえば、１５０〜１８０
℃、２〜１６時間）を行うこともできる。The semiconductor device of the present invention is obtained by preparing a semiconductor device spare device having the semiconductor element 1 mounted on the substrate 2 and molding and curing the epoxy resin composition in a mold in which the spare device is arranged. Can be In molding, the epoxy resin composition is usually used in the form of a powder or a tablet. Then, the epoxy resin composition is, for example, 1
It is manufactured by molding at a temperature of 20 to 250 ° C, preferably 150 to 200 ° C, by a method such as transfer molding, injection molding, and casting method. If necessary, additional heat treatment (for example, 150 to 180
C. for 2 to 16 hours).
【００１１】本発明において、基板基材２ａに用いる材
料は特に限定されないが、半導体素子が駆動することに
よって発生する熱を逃がすことから、放熱特性の良好な
材料を用い、かつ絶縁性のものであることが好ましい。
このような材料としては、合成樹脂、さらにポリイミド
が好ましい。また、半導体装置の内部応力が緩和される
ため、該基板が可撓性材料であることが好ましい。In the present invention, the material used for the substrate 2a is not particularly limited. However, since heat generated when the semiconductor element is driven is released, a material having good heat radiation characteristics and an insulating material are used. Preferably, there is.
As such a material, a synthetic resin and further a polyimide are preferable. In addition, since the internal stress of the semiconductor device is reduced, the substrate is preferably made of a flexible material.
【００１２】本発明におけるエポキシ樹脂組成物の硬化
物の２３℃での曲げ弾性率が≦３０ＧＰａ、２３℃から
ガラス転移温度までの線膨張係数が４×１０-6／Ｋ〜１
０×１０-6／Ｋ、（２３℃での曲げ弾性率）×（２３℃
からガラス転移温度までの線膨張係数）≦２×１０-4Ｇ
Ｐａ／Ｋであることが好ましい。この範囲の物性を満た
す場合に、密着性が良好で、半導体装置の内部応力が小
さく、信頼性の高い半導体装置が得られる。ガラス状領
域での線膨張係数が大きい場合は、半導体装置の反り量
が大きく、サーマルサイクル性、および耐ポップコーン
性が劣る。線膨張係数が小さい場合は、樹脂と基板の界
面に剥離が発生しやすく、サーマルサイクル性が劣る傾
向がある。曲げ弾性率が大きい場合は、封止樹脂と基板
や半導体素子との密着性が低下する傾向がある。また、
エポキシ樹脂組成物の硬化物の２３℃での曲げ弾性率が
≦３０ＧＰａ、２３℃からガラス転移温度までの線膨張
係数が４×１０-6〜１０×１０-6／Ｋであっても、（２
３℃での曲げ弾性率）×（２３℃からガラス転移温度ま
での線膨張係数）が特定の範囲を超える場合は、半導体
装置の反り量が大きく、また密着性が低下する傾向があ
る。The cured product of the epoxy resin composition of the present invention has a flexural modulus at 23 ° C. of ≦ 30 GPa and a linear expansion coefficient from 23 ° C. to a glass transition temperature of 4 × 10 −6 / K to 1
0 × 10 −6 / K, (flexural modulus at 23 ° C.) × (23 ° C.
Coefficient of linear expansion from temperature to glass transition temperature) ≦ 2 × 10 −4 G
Preferably, it is Pa / K. When the physical properties in this range are satisfied, a highly reliable semiconductor device having good adhesion, small internal stress of the semiconductor device, and a semiconductor device can be obtained. When the coefficient of linear expansion in the glassy region is large, the amount of warpage of the semiconductor device is large, and the thermal cycling property and popcorn resistance are poor. If the coefficient of linear expansion is small, peeling is likely to occur at the interface between the resin and the substrate, and thermal cycling properties tend to be poor. If the flexural modulus is large, the adhesion between the sealing resin and the substrate or semiconductor element tends to decrease. Also,
Even if the cured product of the epoxy resin composition has a flexural modulus at 23 ° C. of ≦ 30 GPa and a linear expansion coefficient from 23 ° C. to the glass transition temperature of 4 × 10 −6 to 10 × 10 −6 / K, 2
When the flexural modulus at 3 ° C. × (linear expansion coefficient from 23 ° C. to the glass transition temperature) exceeds a specific range, the amount of warpage of the semiconductor device tends to be large, and the adhesion tends to decrease.
【００１３】ここでいう硬化物とは、本発明のエポキシ
樹脂組成物を、たとえば１２０〜２５０℃、好ましくは
１５０〜２００℃の温度で、トランスファ成形、インジ
ェクション成形、注型法などの方法で成型し、必要に応
じて、追加熱処理（たとえば、１５０〜１８０℃、２〜
１６時間）を行って得られ、通常はエポキシ基の化学反
応またはエポキシ樹脂組成物の物理的物性がほぼ飽和に
達したものである。The term "cured product" as used herein means that the epoxy resin composition of the present invention is molded at a temperature of, for example, 120 to 250 ° C., preferably 150 to 200 ° C. by a method such as transfer molding, injection molding, or casting. And, if necessary, additional heat treatment (for example,
16 hours), and usually the chemical reaction of the epoxy group or the physical properties of the epoxy resin composition almost reached saturation.
【００１４】本発明におけるエポキシ樹脂組成物には、
エポキシ樹脂（Ａ）が通常配合される。このようなもの
としては、１分子中にエポキシ基を２個以上有するもの
であれば特に限定されない。The epoxy resin composition of the present invention includes:
Epoxy resin (A) is usually blended. Such a material is not particularly limited as long as it has two or more epoxy groups in one molecule.
【００１５】たとえば、クレゾールノボラック型エポキ
シ樹脂、フェノールノボラック型エポキシ樹脂、ビフェ
ニル型エポキシ樹脂、ナフタレン型エポキシ樹脂、ビス
フェノールＡやレゾルシンなどから合成される各種ノボ
ラック型エポキシ樹脂、線状脂肪族エポキシ樹脂、脂環
式エポキシ樹脂、複素環式エポキシ樹脂、ハロゲン化エ
ポキシ樹脂などがあげられる。For example, cresol novolak type epoxy resin, phenol novolak type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, various novolak type epoxy resins synthesized from bisphenol A and resorcinol, linear aliphatic epoxy resin, fatty acid A cyclic epoxy resin, a heterocyclic epoxy resin, a halogenated epoxy resin and the like can be mentioned.
【００１６】用途によっては二種以上のエポキシ樹脂を
併用してもよいが、耐熱性および耐湿性の点から、ビフ
ェニル型エポキシ樹脂を前エポキシ樹脂中に５０％以上
含むことが好ましい。Depending on the application, two or more epoxy resins may be used in combination. However, it is preferable that the pre-epoxy resin contains 50% or more of the biphenyl type epoxy resin in view of heat resistance and moisture resistance.
【００１７】本発明のエポキシ樹脂組成物中のエポキシ
樹脂の含有量は、２〜１２重量％が好ましい。The content of the epoxy resin in the epoxy resin composition of the present invention is preferably 2 to 12% by weight.
【００１８】本発明のエポキシ樹脂組成物には、硬化剤
（Ｂ）が配合される。本発明においては、水酸基が直結
した芳香族基を２個以上有し、該芳香族基の間に脂環族
基が介在しているフェノール化合物（ｂ）を必須成分と
して含有する。このような化合物としては、構造（Ｖ）
または（VI）で表される化合物、およびこれらのアルデ
ヒドとの重合体が例示される。The epoxy resin composition of the present invention contains a curing agent (B). In the present invention, a phenol compound (b) having two or more aromatic groups directly connected to a hydroxyl group and an alicyclic group interposed between the aromatic groups is contained as an essential component. Such a compound has a structure (V)
Or, the compound represented by (VI) and a polymer with these aldehydes are exemplified.
【００１９】[0019]
【化３】 （式中、炭素原子に結合している水素は、炭素数１〜６
の脂肪族または脂環族基によって置換されていても良
い。） さらに、（Ｉ）、（II）、（III）、（IV）で表される
多価フェノール化合物が例示される。Embedded image (Wherein the hydrogen bonded to the carbon atom has 1 to 6 carbon atoms)
May be substituted by an aliphatic or alicyclic group. Furthermore, the polyhydric phenol compounds represented by (I), (II), (III) and (IV) are exemplified.
【００２０】[0020]
【化４】 （式中、ｎは０以上の整数。）そのほか、フェノールノ
ボラック樹脂、クレゾールノボラック樹脂、フェノール
アラルキル樹脂、トリスヒドロキシフェニルメタン、ビ
スフェノールＡやレゾルシンから合成される各種ノボラ
ック樹脂、レゾール樹脂、ポリビニルフェノールなどの
各種多価フェノール化合物、無水マレイン酸、無水フタ
ル酸、無水ピロメリット酸などの酸無水物およびメタフ
ェニレンジアミン、ジアミノジフェニルメタン、ジアミ
ノジフェンルスルホンなどの芳香族アミンなどが硬化剤
（Ｂ）の一部として使用できる。なかでも、密着性の点
から１分子中に水酸基を２個以上有するフェノール化合
物が好ましく、なかでもフェノールノボラック樹脂、フ
ェノールアラルキル樹脂、トリスヒドロキシフェニルメ
タンなども配合することができる。フェノール化合物
（ｂ）は、密着性の向上の観点から、全硬化剤中に５０
％以上含有することが好ましい。また、フェノールノボ
ラック樹脂、フェノールアラルキル樹脂、トリスヒドロ
キシフェニルメタンを配合する場合、これらの和が、フ
ェノール化合物（ｂ）以外の硬化剤成分のうち、５０重
量％以上、さらに７０重量％であることが好ましい。Embedded image (In the formula, n is an integer of 0 or more.) In addition, phenol novolak resin, cresol novolak resin, phenol aralkyl resin, trishydroxyphenylmethane, various novolak resins synthesized from bisphenol A or resorcinol, resole resin, polyvinyl phenol, etc. Various polyhydric phenol compounds, acid anhydrides such as maleic anhydride, phthalic anhydride, and pyromellitic anhydride, and aromatic amines such as metaphenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone are included in the curing agent (B). Can be used as a part. Among them, a phenol compound having two or more hydroxyl groups in one molecule is preferable from the viewpoint of adhesiveness, and a phenol novolak resin, a phenol aralkyl resin, trishydroxyphenylmethane and the like can also be blended. The phenol compound (b) is contained in the total curing agent in an amount of 50 from the viewpoint of improving the adhesion.
% Is preferable. Further, when a phenol novolak resin, a phenol aralkyl resin, and trishydroxyphenylmethane are blended, the sum of them may be 50% by weight or more, and further 70% by weight, of the curing agent components other than the phenol compound (b). preferable.
【００２１】本発明において、エポキシ樹脂（Ａ）と硬
化剤（Ｂ）の配合比に関しては特に制限はないが、得ら
れるエポキシ樹脂の硬化物および半導体装置の機械的性
質および密着性の点から（Ａ）に対する（Ｂ）の化学当
量比が０．５〜１．５、特に０．８〜１．２の範囲にあ
ることが好ましい。また本発明のエポキシ樹脂組成物中
の硬化剤の含有量は、２〜１２重量％、さらに２〜１０
重量％が好ましい。In the present invention, the mixing ratio of the epoxy resin (A) and the curing agent (B) is not particularly limited, but from the viewpoint of the mechanical properties and adhesion of the cured epoxy resin and the semiconductor device obtained. It is preferable that the chemical equivalent ratio of (B) to A) is in the range of 0.5 to 1.5, particularly 0.8 to 1.2. The content of the curing agent in the epoxy resin composition of the present invention is 2 to 12% by weight, and more preferably 2 to 10% by weight.
% By weight is preferred.
【００２２】また、本発明においてエポキシ樹脂（Ａ）
と硬化剤（Ｂ）の硬化反応を促進するための硬化触媒を
用いてもよい。硬化触媒は硬化反応を促進するものなら
ば特に限定されず、たとえば２−メチルイミダゾール、
２，４−ジメチルイミダゾール、２−メチル−４−メチ
ルイミダゾール、２−ヘプタデシルイミダゾールなどの
イミダゾール化合物、トリエチルアミン、ベンジルジメ
チルアミン、α−メチルベンジルジメチルアミン、２−
（ジメチルアミノメチル）フェノール、２，４，６−ト
リス（ジメチルアミノメチル）フェノール、１，８−ジ
アザビシクロ（５，４，０）ウンデセン−７、１，５−
ジアザビシクロ（４，３，０）ノネン−５などの３級ア
ミン化合物、ジルコニウムテトラメトキシド、ジルコニ
ウムテトラプロポキシド、テトラキス（アセチルアセト
ナト）ジルコニウム、トリ（アセチルアセトナト）アル
ミニウムなどの有機金属化合物およびトリフェニルホス
フィン、トリメチルホスフィン、トリエチルホスフィ
ン、トリブチルホスフィン、トリ（ｐ−メチルフェニ
ル）ホスフィン、トリ（ノニルフェニル）ホスフィン、
トリフェニルホスフィン・トリフェニルボラン、テトラ
フェニルホスフォニウム・テトラフェニルボレートなど
の有機ホスフィン化合物があげられる。なかでも反応性
の点からトリフェニルホスフィンやテトラフェニルホス
フォニウム・テトラフェニルボレートや１，８−ジアザ
ビシクロ（５，４，０）ウンデセン−７が特に好ましく
用いられる。これらの硬化触媒は、用途によっては２種
以上を併用してもよく、その添加量はエポキシ樹脂
（Ａ）１００重量部に対して０．１〜１０重量部の範囲
が好ましい。In the present invention, the epoxy resin (A)
A curing catalyst for accelerating the curing reaction between the curing agent (B) and the curing agent (B) may be used. The curing catalyst is not particularly limited as long as it promotes the curing reaction. For example, 2-methylimidazole,
Imidazole compounds such as 2,4-dimethylimidazole, 2-methyl-4-methylimidazole, 2-heptadecylimidazole, triethylamine, benzyldimethylamine, α-methylbenzyldimethylamine,
(Dimethylaminomethyl) phenol, 2,4,6-tris (dimethylaminomethyl) phenol, 1,8-diazabicyclo (5,4,0) undecene-7,1,5-
Tertiary amine compounds such as diazabicyclo (4,3,0) nonene-5; organometallic compounds such as zirconium tetramethoxide, zirconium tetrapropoxide, tetrakis (acetylacetonato) zirconium, and tri (acetylacetonato) aluminum; Phenylphosphine, trimethylphosphine, triethylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine,
Organic phosphine compounds such as triphenylphosphine / triphenylborane and tetraphenylphosphonium / tetraphenylborate are exemplified. Among them, triphenylphosphine, tetraphenylphosphonium tetraphenylborate and 1,8-diazabicyclo (5,4,0) undecene-7 are particularly preferably used from the viewpoint of reactivity. Two or more of these curing catalysts may be used in combination depending on the application, and the addition amount thereof is preferably in the range of 0.1 to 10 parts by weight based on 100 parts by weight of the epoxy resin (A).
【００２３】本発明のエポキシ樹脂組成物においては通
常充填剤（Ｃ）が配合され、非晶性シリカ、結晶性シリ
カ、炭酸カルシウム、炭酸マグネシウム、アルミナ、マ
グネシア、クレー、タルク、ケイ酸カルシウム、酸化チ
タン、酸化アンチモン、アスベスト、ガラス繊維なおが
あげられるが、中でも非晶性シリカは線膨張係数を低下
させる効果が大きく、低応力化に有効なため好ましく用
いられる。非晶性シリカの例としては、石英を溶融して
製造した溶融シリカや、各種合成法で製造された合成シ
リカがあげられ、破砕状のものや球状のものが用いられ
る。In the epoxy resin composition of the present invention, a filler (C) is generally blended, and amorphous silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, oxide Titanium, antimony oxide, asbestos, and glass fiber are also preferable. Among them, amorphous silica is preferably used because it has a large effect of lowering the coefficient of linear expansion and is effective in reducing stress. Examples of the amorphous silica include fused silica produced by melting quartz and synthetic silica produced by various synthetic methods, and crushed or spherical ones are used.
【００２４】本発明において、充填剤（Ｃ）の配合量
は、サーマルサイクル性、耐ポップコーン性の向上の観
点から、エポキシ樹脂組成物全体の８５重量〜９５重量
％、好ましくは８７〜９３重量％であることが必要であ
る。In the present invention, the amount of the filler (C) is from 85 to 95% by weight, preferably from 87 to 93% by weight of the entire epoxy resin composition from the viewpoint of improving thermal cycling properties and popcorn resistance. It is necessary to be.
【００２５】本発明のエポキシ樹脂組成物においては、
シランカップリング剤、チタネートカップリング剤など
のカップリング剤を配合することができ、なかでも、こ
れらカップリング剤で前もって充填剤を表面処理してお
くことが信頼性の点で好ましい。シランカップリング剤
として、アルコキシ基および「エポキシ基、アミノ基、
メルカプト基、などの官能基が結合した炭化水素基」が
ケイ素原子に結合したシランカップリング剤が好ましく
用いられる。なかでも、流動性の点から、アミノ基を有
するシランカップリング剤を用いることが特に好まし
い。In the epoxy resin composition of the present invention,
Coupling agents such as a silane coupling agent and a titanate coupling agent can be blended. Among them, it is preferable from the standpoint of reliability that the filler be surface-treated with these coupling agents in advance. As silane coupling agents, alkoxy groups and "epoxy groups, amino groups,
A silane coupling agent having a "hydrocarbon group having a functional group such as a mercapto group" bonded to a silicon atom is preferably used. Among them, it is particularly preferable to use a silane coupling agent having an amino group from the viewpoint of fluidity.
【００２６】本発明のエポキシ樹脂組成物にはエラスト
マー（Ｄ）を配合することができ、半導体装置反り量の
低減、低応力化の効果がある。このようなものとして
は、たとえば、シリコーンゴム、ＥＰＲ、ＥＰＤＭ、Ｓ
ＥＢＳなどのオレフィン系共重合体、ポリブタジエンゴ
ム、エポキシ基、アミノ基、水酸基、カルボキシル基な
どを有する有機基で置換された変性シリコーンオイルな
どがあげられる。また、エラストマー（Ｄ）以外にもポ
リエチレンなどの熱可塑性樹脂を低応力化剤として配合
することができる。本発明の目的を達成するためには、
これらのエラストマー、低応力化剤を用いることが好ま
しい。The epoxy resin composition of the present invention can be blended with an elastomer (D), which has the effect of reducing the amount of warpage of semiconductor devices and reducing stress. Such materials include, for example, silicone rubber, EPR, EPDM, S
Examples include olefin copolymers such as EBS, polybutadiene rubber, modified silicone oil substituted with an organic group having an epoxy group, an amino group, a hydroxyl group, a carboxyl group, and the like. In addition to the elastomer (D), a thermoplastic resin such as polyethylene can be blended as a stress reducing agent. In order to achieve the object of the present invention,
It is preferable to use these elastomers and low stress agents.
【００２７】本発明のエポキシ樹脂組成物にはハロゲン
化エポキシ樹脂などのハロゲン化合物、リン化合物など
の難燃剤、三酸化アンチモンなどの難燃助剤、カーボン
ブラック、酸化鉄などの着色剤、長鎖脂肪酸、長鎖脂肪
酸の金属塩、長鎖脂肪酸のエステル、長鎖脂肪酸のアミ
ド、パラフィンワックスなどの離型剤および有機過酸化
物などの架橋剤を任意に添加することができる。The epoxy resin composition of the present invention contains a halogen compound such as a halogenated epoxy resin, a flame retardant such as a phosphorus compound, a flame retardant auxiliary such as antimony trioxide, a coloring agent such as carbon black and iron oxide, a long chain. A releasing agent such as a fatty acid, a metal salt of a long-chain fatty acid, an ester of a long-chain fatty acid, an amide of a long-chain fatty acid, paraffin wax and a crosslinking agent such as an organic peroxide can be optionally added.
【００２８】本発明のエポキシ樹脂組成物はこれら原料
を溶融混練して得ることが好ましく、たとえばバンバリ
ーミキサー、ニーダー、ロール、単軸もしくは二軸の押
し出し機およびコニーダーなどの公知の混練方法を用い
て溶融混練することにより、製造される。そしてペレッ
トやパウダー状のエポキシ樹脂を用いて、基板２上に半
導体素子１が搭載された半導体装置予備装置を配置した
金型内で成形することにより半導体装置が得られる。特
に本発明のエポキシ樹脂組成物は、エポキシ樹脂組成物
を実質的に囲む構造体を有さない半導体装置に有利であ
る。The epoxy resin composition of the present invention is preferably obtained by melt-kneading these raw materials. For example, a known kneading method such as a Banbury mixer, a kneader, a roll, a single-screw or twin-screw extruder and a co-kneader may be used. It is manufactured by melt-kneading. Then, a semiconductor device is obtained by molding using a pellet or a powdery epoxy resin in a mold in which a semiconductor device spare device in which the semiconductor element 1 is mounted on the substrate 2 is arranged. In particular, the epoxy resin composition of the present invention is advantageous for a semiconductor device having no structure substantially surrounding the epoxy resin composition.
【００２９】[0029]
【実施例】以下、実施例により本発明を具体的に説明す
る。なお、表１および２の配合量は、重量部を示す。The present invention will be described below in detail with reference to examples. In addition, the compounding quantity of Table 1 and 2 shows a weight part.
【００３０】実施例１〜５、比較例１〜５ 表１、２に示した成分を、表３に示した組成比でミキサ
ーによりドライブレンドした。これを、ロール表面温度
９０℃のミキシングロールを用いて５分間加熱混練後、
冷却粉砕してエポキシ樹脂組成物を製造した。Examples 1 to 5 and Comparative Examples 1 to 5 The components shown in Tables 1 and 2 were dry-blended by a mixer at the composition ratios shown in Table 3. This was heated and kneaded for 5 minutes using a mixing roll having a roll surface temperature of 90 ° C.
The mixture was cooled and pulverized to produce an epoxy resin composition.
【００３１】[0031]
【表１】 [Table 1]
【化５】 （ｎは０以上の整数。）Embedded image (N is an integer of 0 or more.)
【００３２】[0032]
【表２】 [Table 2]
【００３３】この組成物を用い、低圧トランスファー成
形法により成形温度１７５℃、成形時間２分、トランス
ファー圧力７ＭＰａの条件で成形し、１８０℃×５時間
の条件でポストキュアして、各組成物の曲げ弾性率、線
膨張係数を測定した。線膨張係数はＴＭＡを用い、 ２
３℃とガラス転移温度との間の熱膨張曲線から平均値を
求めた。曲げ弾性率は、室温下で３点曲げ試験を行い、
荷重−たわみ曲線から求めた。この結果を表３に示す。Using this composition, the composition was molded at a molding temperature of 175 ° C., a molding time of 2 minutes and a transfer pressure of 7 MPa by a low pressure transfer molding method, and was post-cured at a temperature of 180 ° C. × 5 hours. The flexural modulus and the coefficient of linear expansion were measured. The coefficient of linear expansion uses TMA.
The average value was determined from the thermal expansion curve between 3 ° C. and the glass transition temperature. The flexural modulus performs a three-point bending test at room temperature.
It was determined from a load-deflection curve. Table 3 shows the results.
【００３４】また組成物を用い、図３に示す形状の半導
体装置予備装置を金型内に設けて、上述と同じ条件でト
ランスファー成形およびポストキュアーし、図２に示す
ような模擬半導体装置を組み立てた。次の物性測定法に
より、各組成物、半導体装置の物性を測定した。模擬半
導体装置は図２において、半導体素子１と該半導体素子
が搭載される基板２とこの組成物を用いた半導体素子を
封止するエポキシ樹脂組成物３とを具備し、該基板２は
ＰＩ（ポリイミドフィルムによって形成されている。Using the composition, a semiconductor device spare device having the shape shown in FIG. 3 is provided in a mold, and transfer molding and post-curing are performed under the same conditions as described above, thereby assembling a simulated semiconductor device as shown in FIG. Was. The physical properties of each composition and semiconductor device were measured by the following physical property measurement methods. The simulated semiconductor device shown in FIG. 2 includes a semiconductor element 1, a substrate 2 on which the semiconductor element is mounted, and an epoxy resin composition 3 for encapsulating a semiconductor element using the composition. It is formed by a polyimide film.
【００３５】なお図２の半導体装置の各部分の寸法は以
下のとおりである。The dimensions of each part of the semiconductor device of FIG. 2 are as follows.
【００３６】 半導体素子１： ７×７×０．５mm 接着層４厚み： ０．１mm エポキシ樹脂３：２０×２０×1.0 mm 金属配線２ｃ厚み：０．１mm 基板基材厚み： ０．１５mm ＰＩフィルム剥離強度：上記の成形方法で、縦１０×横
１０ｍｍ、高さ５ｍｍの四角柱をＰＩフィルム上に成形
し、１８０度剥離試験により剥離強度を測定した。この
値は基板と封止樹脂との密着性を反映する。Semiconductor element 1: 7 × 7 × 0.5 mm Adhesive layer 4 thickness: 0.1 mm Epoxy resin 3: 20 × 20 × 1.0 mm Metal wiring 2c thickness: 0.1 mm Substrate base material thickness: 0.15 mm PI film Peel strength: A square pillar having a length of 10 × 10 mm and a height of 5 mm was formed on a PI film by the above-mentioned forming method, and the peel strength was measured by a 180 ° peel test. This value reflects the adhesion between the substrate and the sealing resin.
【００３７】半導体装置反り量：模擬半導体装置平面部
の対角線上を表面あらさ計を用いて表面の凹凸を測定
し、水平方向から見た場合の最下点と最上点との間の距
離を垂直方向で測定し、表３にパッケージ反り量として
記載した。Semiconductor device warpage: The surface roughness is measured on the diagonal line of the simulated semiconductor device plane using a surface roughness meter, and the distance between the lowest point and the highest point when viewed from the horizontal direction is determined by the vertical. The measurement was made in the direction, and the results are shown in Table 3 as the amount of package warpage.
【００３８】サーマルサイクル性：模擬半導体装置を−
６５℃×３０ｍｉｎ、常温×１０ｍｉｎ、１５０℃×３
０ｍｉｎ、常温×１０ｍｉｎを１サイクルとして、半導
体装置２０個を用いて放置試験を行った。１５０ｃｙｃ
ｌｅ放置後に、半導体装置を分解して内部を目視で観察
し、樹脂部分のクラックの発生、半導体素子の割れを故
障として判定し、故障率を求めた。Thermal cyclability: Simulated semiconductor device
65 ° C × 30min, room temperature × 10min, 150 ° C × 3
A leaving test was performed using 20 semiconductor devices with 0 min, normal temperature × 10 min as one cycle. 150 cyc
After leaving for a while, the semiconductor device was disassembled and the inside was visually observed. Cracking of the resin portion and cracking of the semiconductor element were determined as failures, and the failure rate was determined.
【００３９】ポップコーン試験：模擬半導体装置２０個
を８５℃／８５％ＲＨで４８時間加湿後、最高温度２５
０℃のＩＲリフロー炉で加熱処理し、半導体装置のＰＩ
フィルム基板と樹脂界面の剥離の有無を目視で観察し
た。故障率として、剥離の発生したパッケージの割合を
求めた。Popcorn test: 20 simulated semiconductor devices were humidified at 85 ° C./85% RH for 48 hours, and the maximum temperature was 25.
Heat treatment in an IR reflow furnace at 0 ° C.
The presence or absence of peeling at the interface between the film substrate and the resin was visually observed. As the failure rate, the ratio of the packages where peeling occurred was obtained.
【００４０】これらの結果を表３に示す。Table 3 shows the results.
【００４１】[0041]
【表３】 [Table 3]
【００４２】表３に見られるように、本発明のエポキシ
樹脂組成物、および樹脂封止型半導体装置は、密着性、
パッケージ反り量の低減、サーマルサイクル性、耐ポッ
プコーン性に優れている。これに対して、本発明の硬化
剤（ｂ）を含有しない比較例５は密着性、サーマルサイ
クル性、耐ポップコーン性が劣る。また、無機充填剤の
含有量が本発明の範囲よりも少ない比較例２は、密着性
は優れるものの、パッケージ反り量、耐ポップコーン
性、サーマルサイクル性が劣っている。As can be seen from Table 3, the epoxy resin composition of the present invention and the resin-encapsulated semiconductor device exhibited excellent adhesion,
Excellent package warpage, thermal cycling and popcorn resistance. On the other hand, Comparative Example 5, which does not contain the curing agent (b) of the present invention, is inferior in adhesion, thermal cycling, and popcorn resistance. Comparative Example 2, in which the content of the inorganic filler is smaller than the range of the present invention, is excellent in adhesion, but is inferior in package warpage, popcorn resistance, and thermal cycleability.
【００４３】[0043]
【発明の効果】本発明の樹脂組成物によれば密着性、半
導体装置の反り量の低減に優れ、該樹脂組成物を用いた
該半導体装置はサーマルサイクル性、耐ポップコーン性
に優れている。According to the resin composition of the present invention, the adhesion is excellent and the amount of warpage of the semiconductor device is reduced, and the semiconductor device using the resin composition is excellent in thermal cycling and popcorn resistance.
【図１】本発明の半導体装置の一態様を示す模式図（断
面）FIG. 1 is a schematic view (cross section) illustrating one embodiment of a semiconductor device of the present invention.
【図２】本発明の半導体装置の一態様を示す模式図（断
面）FIG. 2 is a schematic view (cross section) illustrating one embodiment of a semiconductor device of the present invention.
【図３】本発明の実施例に使用した半導体装置予備装置
の模式図（断面）FIG. 3 is a schematic view (cross section) of a semiconductor device spare device used in an embodiment of the present invention.
１：半導体素子 ２：基板 ２ａ：基板基材 ２ｂ：通電部 ２ｃ：金属配線 ３：エポキシ樹脂組成物 ４：接着層 ５：リード線 ６：半田ボール 1: Semiconductor element 2: Substrate 2a: Substrate base material 2b: Conducting part 2c: Metal wiring 3: Epoxy resin composition 4: Adhesive layer 5: Lead wire 6: Solder ball
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｃ０８Ｌ 63/00 Ｃ０８Ｌ 63/00 Ｃ Ｈ０１Ｌ 23/29 Ｈ０１Ｌ 23/30 Ｒ 23/31 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI C08L 63/00 C08L 63/00 C H01L 23/29 H01L 23/30 R 23/31
Claims (5)
れる基板２と、エポキシ樹脂組成物３とを具備するもの
で、該基板に対して片面にのみ該エポキシ樹脂組成物が
成形されている半導体装置用のエポキシ樹脂組成物であ
って、エポキシ樹脂（Ａ）、硬化剤（Ｂ）、無機充填剤
（Ｃ）を含んでなり、該エポキシ樹脂組成物の硬化剤
が、水酸基が直結した芳香族基を２個以上有し、該芳香
族基の間に脂環族基が介在しているフェノール化合物
（ｂ）を必須成分として含有し、無機充填剤がエポキシ
樹脂組成物に対し８５〜９５重量％であることを特徴と
する半導体封止用エポキシ樹脂組成物。A semiconductor device comprising a semiconductor element, a substrate on which the semiconductor element is mounted, and an epoxy resin composition, wherein the epoxy resin composition is molded on only one surface of the substrate. An epoxy resin composition for a semiconductor device, comprising: an epoxy resin (A), a curing agent (B), and an inorganic filler (C), wherein the curing agent of the epoxy resin composition has a hydroxyl group directly connected. A phenolic compound (b) having two or more aromatic groups and an alicyclic group interposed between the aromatic groups as an essential component; 95% by weight of an epoxy resin composition for semiconductor encapsulation.
〜(ハ)の特性を有するものである請求項１記載のエポキ
シ樹脂組成物。 (イ)２３℃での曲げ弾性率が、１０ＧＰａを超え、３０
ＧＰａ以下 (ロ)２３℃からガラス転移温度までの線膨張係数が４×
１０-6〜１０×１０-6／Ｋ (ハ)（２３℃での曲げ弾性率）×（２３℃からガラス転
移温度までの線膨張係数）が２×１０-4ＧＰａ／Ｋ以下2. The cured product of the epoxy resin composition has the following (a)
The epoxy resin composition according to claim 1, which has the characteristics of (c) to (c). (B) The flexural modulus at 23 ° C. exceeds 10 GPa and
GPa or less (b) Coefficient of linear expansion from 23 ° C to glass transition temperature is 4 ×
10 −6 to 10 × 10 −6 / K (c) (Bending elastic modulus at 23 ° C.) × (linear expansion coefficient from 23 ° C. to glass transition temperature) is 2 × 10 −4 GPa / K or less
（Ｖ）または（VI）の構造を有するもの、またはそれと
アルデヒドとの重合体である請求項１または２記載のエ
ポキシ樹脂組成物。 【化１】 （式中、炭素原子に結合している水素は、炭素数１〜６
の脂肪族または脂環族基によって置換されていても良
い。）3. The epoxy resin composition according to claim 1, wherein the phenol compound (b) is a compound having the structure of the following structure (V) or (VI), or a polymer of the compound and an aldehyde. Embedded image (Wherein the hydrogen bonded to the carbon atom has 1 to 6 carbon atoms)
May be substituted by an aliphatic or alicyclic group. )
（Ｄ）を含んでなることを特徴とする請求項１〜３いず
れかに記載のエポキシ樹脂組成物。4. The epoxy resin composition according to claim 1, wherein the epoxy resin composition comprises an elastomer (D).
れる基板２と、該半導体素子を封止するエポキシ樹脂組
成物３とを具備する半導体装置であって、該基板に対し
て片面にのみ該エポキシ樹脂組成物が成形されており、
前記エポキシ樹脂組成物が請求項１〜４いずれかのエポ
キシ樹脂組成物の硬化物である半導体装置。5. A semiconductor device comprising a semiconductor element 1, a substrate 2 on which the semiconductor element is mounted, and an epoxy resin composition 3 for encapsulating the semiconductor element, wherein the semiconductor element is provided on one side of the substrate. Only the epoxy resin composition is molded,
A semiconductor device wherein the epoxy resin composition is a cured product of the epoxy resin composition according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9015732A JPH10212342A (en) | 1997-01-29 | 1997-01-29 | Epoxy resin composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9015732A JPH10212342A (en) | 1997-01-29 | 1997-01-29 | Epoxy resin composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10212342A true JPH10212342A (en) | 1998-08-11 |
Family
ID=11896951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9015732A Withdrawn JPH10212342A (en) | 1997-01-29 | 1997-01-29 | Epoxy resin composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10212342A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001192532A (en) * | 2000-01-11 | 2001-07-17 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2011054726A (en) * | 2009-09-01 | 2011-03-17 | Kyocera Chemical Corp | Electric double-layer capacitor |
-
1997
- 1997-01-29 JP JP9015732A patent/JPH10212342A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001192532A (en) * | 2000-01-11 | 2001-07-17 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP4491884B2 (en) * | 2000-01-11 | 2010-06-30 | 住友ベークライト株式会社 | Epoxy resin composition and semiconductor device |
| JP2011054726A (en) * | 2009-09-01 | 2011-03-17 | Kyocera Chemical Corp | Electric double-layer capacitor |
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