JPH10189510A - Method and apparatus for formation of specular chamfered part at semiconductor wafer - Google Patents
Method and apparatus for formation of specular chamfered part at semiconductor waferInfo
- Publication number
- JPH10189510A JPH10189510A JP35831396A JP35831396A JPH10189510A JP H10189510 A JPH10189510 A JP H10189510A JP 35831396 A JP35831396 A JP 35831396A JP 35831396 A JP35831396 A JP 35831396A JP H10189510 A JPH10189510 A JP H10189510A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- wafer
- semiconductor wafer
- nonwoven fabric
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、既に面取り加工
された半導体ウェーハの面取り部を、回転する研磨布ク
ロスに砥液を滴下させながら研磨を行い鏡面化を行う方
法の改良に係り、研磨クロスに円柱状にした不織布を使
用して、回転する研磨クロス体の外周面にウェーハの面
取り部を接触させて鏡面研磨することにより、研磨効率
の向上とクロスライフの長寿命化を図った半導体ウェー
ハの面取り部鏡面化方法とその装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a method of polishing a chamfered portion of a semiconductor wafer, which has already been chamfered, by dropping an abrasive liquid onto a rotating polishing cloth to make a mirror surface. Semiconductor wafer with improved polishing efficiency and longer life of cross life by using a cylindrical non-woven fabric to make mirror-polishing by contacting the chamfer of the wafer with the outer peripheral surface of the rotating polishing cloth body The present invention relates to a method and an apparatus for mirroring a chamfered part.
【０００２】[0002]
【従来の技術】今日の半導体集積回路素子の集積度が著
しく向上した現状では、デバイス製造工程において、外
周面の欠け防止のため面取りが行われ、さらに、外周面
からの発塵防止、面取り部の強度向上を目的に、外周面
取り部の鏡面化が行われている。2. Description of the Related Art In the present situation where the degree of integration of semiconductor integrated circuit elements has been greatly improved, chamfering is performed in the device manufacturing process to prevent chipping of the outer peripheral surface. For the purpose of improving the strength, the outer peripheral chamfered portion is mirror-finished.
【０００３】半導体ウェーハの面取り部の鏡面装置とし
て、特開昭６４−７１６５６号公報には、円筒状をなす
ドラム部材の外周面に研磨布を貼着し、ウェーハを保持
し回転させ、接触させて研磨する装置が提案されてい
る。As a mirror device for a chamfered portion of a semiconductor wafer, Japanese Patent Application Laid-Open No. 64-71656 discloses a polishing cloth attached to an outer peripheral surface of a cylindrical drum member, and the wafer is held, rotated and brought into contact. Polishing apparatuses have been proposed.
【０００４】また、特開平５‐９０２３４号公報には、
ウレタン樹脂、硬化剤及び発泡剤から構成され、回転駆
動される円形研磨板の外周部に形成された略Ｖ字型の溝
部に半導体ウェーハの端面を回転させながら所定の圧力
で接触させると共に、その接触部に液状の研磨剤を滴下
して研磨する方法及び装置が提案されている。[0004] Japanese Patent Application Laid-Open No. 5-90234 discloses that
A urethane resin, a curing agent, and a foaming agent are formed, and the end surface of the semiconductor wafer is brought into contact with a predetermined pressure while rotating the end surface of the semiconductor wafer in a substantially V-shaped groove formed on the outer periphery of the circular polishing plate that is driven to rotate. A method and an apparatus for polishing by dropping a liquid abrasive onto a contact portion have been proposed.
【０００５】[0005]
【発明が解決しようとする課題】上記半導体ウェーハの
面取り部鏡面化方法において、前者の方法では、研磨ク
ロスのライフが短く、クロスの交換、貼着に手間がかか
る等の問題点があった。In the above-mentioned method for mirror-beveling a chamfered portion of a semiconductor wafer, the former method has a problem that the life of the polishing cloth is short, and it takes time to replace and attach the cloth.
【０００６】また、後者方法では、ウレタン樹脂、硬化
剤及び発泡剤からなる円形研磨板では面取り部全域を一
度に研磨できないできないため、図４Ａ，Ｂに示すごと
く、半導体ウェーハ１の端面１ａとテーパー面１ｂ，１
ｂに分けて、それぞれ円形研磨板２の平面部あるいは円
形研磨板２のＶ字型溝部３で研磨しなければならなず、
また、研磨液の保持能が劣るため研磨効率が悪く、多大
の研磨時間を要する等の問題点があった。Further, in the latter method, the entire surface of the chamfered portion cannot be polished at once with a circular polishing plate made of a urethane resin, a curing agent and a foaming agent, so that the end surface 1a of the semiconductor wafer 1 is tapered as shown in FIGS. Surface 1b, 1
b, the surface must be polished by the flat portion of the circular polishing plate 2 or the V-shaped groove 3 of the circular polishing plate 2, respectively.
In addition, there is a problem that the polishing efficiency is poor due to poor holding ability of the polishing liquid, and a long polishing time is required.
【０００７】この発明は、これら上述の問題を解消する
ことを目的とし、半導体ウェーハの面取り部鏡面化方法
において、研磨クロスのライフを長くし、かつ短時間で
良好な鏡面状態を得ることができ、長期間に渡って研磨
クロスの交換がなく、面取り部の鏡面研磨の自動化が容
易な構成からなる半導体ウェーハの面取り部鏡面化方法
とその装置の提供を目的としている。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems, and in a method for mirroring a chamfered portion of a semiconductor wafer, it is possible to extend the life of a polishing cloth and obtain a good mirror surface state in a short time. It is another object of the present invention to provide a method for mirror-polishing a chamfered portion of a semiconductor wafer and a device therefor, wherein the polishing cloth is not replaced for a long time and the mirror-polishing of the chamfered portion is easily automated.
【０００８】[0008]
【課題を解決するための手段】発明者は、半導体ウェー
ハの面取り部鏡面化に際して、使用する研磨クロスの長
寿命化と、短時間で良好な鏡面状態を得ることの相反す
る条件を満足する方法を目的に、研磨クロスの材質と研
磨面との関係について種々検討した結果、研磨クロスに
不織布を使用すること、不織布クロスは現在の技術では
厚さ５ｍｍ以下のものしかできないため、渦巻き状ある
いは同心円状に巻いて圧着またはボンド等により接着を
行い、円柱状にしたクロスの外周側面に半導体ウエーハ
を接触させて研磨することにより、上記目的を達成でき
ることを知見し、この発明を完成した。SUMMARY OF THE INVENTION The inventor of the present invention has proposed a method of mirroring a chamfered portion of a semiconductor wafer, which satisfies the conflicting conditions of extending the life of a polishing cloth to be used and obtaining a good mirror surface state in a short time. As a result of various studies on the relationship between the material of the polishing cloth and the polished surface for the purpose of using a non-woven cloth as the polishing cloth, the current technology can only use a non-woven cloth having a thickness of 5 mm or less. The present inventors have found that the above object can be achieved by lapping and bonding by pressing, bonding, or the like, and bringing the semiconductor wafer into contact with the outer peripheral side surface of the columnar cloth, thereby completing the present invention.
【０００９】すなわち、この発明は、半導体ウェーハの
外周面取り部を回転する研磨クロスと研磨液で鏡面研磨
する面取り部の鏡面化方法において、不織布を渦巻き状
または同心円状に巻いて円柱状にした研磨クロス体を用
い、該研磨クロス体を回転させその外周面に半導体ウエ
ーハの外周面取り部を接触させ鏡面研磨する半導体ウエ
ーハの面取り部鏡面化方法である。That is, the present invention provides a method for mirror-polishing a chamfered portion for mirror-polishing with a polishing cloth and a polishing liquid for rotating a peripheral chamfered portion of a semiconductor wafer, wherein the nonwoven fabric is spirally or concentrically wound into a columnar shape. This is a method for mirror-polishing a semiconductor wafer to be mirror-polished by rotating the polishing cloth body and bringing the outer peripheral chamfered portion of the semiconductor wafer into contact with the outer peripheral surface thereof.
【００１０】また、発明者は、上記構成の鏡面化方法に
おいて、研磨クロスの回転軸と半導体ウェーハの回転軸
が相対的に傾斜している方法、不織布の硬度がＪＩＳＡ
硬度で５０°〜９５°の範囲である方法、を併せて提案
する。[0010] In addition, the inventor of the present invention provides a mirror-finish method as described above, wherein the rotation axis of the polishing cloth and the rotation axis of the semiconductor wafer are relatively inclined.
A method having a hardness in the range of 50 ° to 95 ° is also proposed.
【００１１】さらに、この発明は、不織布を渦巻き状ま
たは同心円状に巻いて円柱状にした研磨クロス体を回転
駆動させる研磨体回転駆動機構と、半導体ウェーハの保
持回転機構と、前記ウェーハの外周面取り部と研磨体の
外周面を一定圧力で接触させる際に相対的に押圧並びに
ウェーハの位置合わせを行う位置制御機構と、前記研磨
クロス体を芯出し成形するための切削治具を有する芯出
し機構と、前記接触部に所定の砥液を滴下可能にした研
磨液機構とを有している半導体ウェーハの面取り部鏡面
化装置である。Further, the present invention provides a polishing body rotation driving mechanism for rotating a non-woven fabric spirally or concentrically to form a columnar polishing cloth body, a semiconductor wafer holding / rotating mechanism, and a peripheral chamfering of the wafer. A position control mechanism for relatively pressing and aligning the wafer when the outer surface of the polishing body is brought into contact with the outer peripheral surface of the polishing body at a constant pressure, and a centering mechanism having a cutting jig for centering and forming the polishing cloth body And a polishing liquid mechanism capable of dropping a predetermined polishing liquid onto the contact portion.
【００１２】[0012]
【発明の実施の形態】この発明による半導体ウエーハの
面取り部鏡面化方法の作用について、図面に基づいて詳
述する。図１Ａ，Ｂはこの発明による鏡面研磨装置の上
面説明図と正面説明図である。図２はこの発明による他
の研磨クロス体の斜視説明図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The operation of the method for mirroring a chamfer of a semiconductor wafer according to the present invention will be described in detail with reference to the drawings. 1A and 1B are a top view and a front view of a mirror polishing apparatus according to the present invention. FIG. 2 is a perspective explanatory view of another polishing cloth body according to the present invention.
【００１３】この発明による半導体ウェーハ面取り部鏡
面化用の研磨装置は、ここでは、矩形の不織布１１から
なる研磨クロスを重ね合わせて接着して円柱状になし、
中心の中空部に回転軸となる治具（図示せず）を用いて
円柱体となして回転可能に保持した研磨クロス体１０機
構と、研磨クロス体１０を回転駆動させる機構と、ウェ
ーハ１の位置合わせを行うための位置制御機構と、前記
ウェーハ１の保持・回転機構１２と、前記ウェーハ１と
不織布からなる研磨クロス体１０を一定圧力で接触させ
る押圧機構と、前記研磨クロス体１０を芯出し成形する
ためのダイヤモンド砥石１３やバイトなどの切削治具を
持つ芯出し機構と、ノズル２０から所定の砥液を噴射す
るための研磨液機構を有している。A polishing apparatus for mirror-polishing a chamfered portion of a semiconductor wafer according to the present invention, in which a polishing cloth made of a rectangular nonwoven fabric 11 is overlapped and bonded to form a columnar shape,
A polishing cloth body 10 mechanism rotatably held as a cylindrical body by using a jig (not shown) serving as a rotation axis in a central hollow portion, a mechanism for rotating and driving the polishing cloth body 10, A position control mechanism for performing positioning, a holding / rotating mechanism 12 for holding the wafer 1, a pressing mechanism for bringing the wafer 1 and the polishing cloth body 10 made of nonwoven fabric into contact with a constant pressure, and It has a centering mechanism having a cutting jig such as a diamond grindstone 13 and a cutting tool for performing the forming and a polishing liquid mechanism for injecting a predetermined polishing liquid from the nozzle 20.
【００１４】この発明において、円柱体の研磨クロス体
１０を構成する不織布には、材質がポリエステル、ナイ
ロン等の繊維質とウレタンなどの合成ゴムからなるもの
を使用するが、現在の技術では厚みが５ｍｍ以下のもの
しかできないため、できるだけ厚いものを使用して、図
１のごとく長さが異なる複数の矩形の不織布１１からな
る研磨クロスを重ね合わせて接着して円柱状にしたり、
また図２に示すごとく、不織布１１を渦巻状にして円柱
体の研磨クロス体１０を構成することができる。In the present invention, the nonwoven fabric constituting the cylindrical polishing cloth body 10 is made of a material made of fibrous material such as polyester or nylon and synthetic rubber such as urethane. Since it can only be 5 mm or less, use as thick a thing as possible, as shown in FIG.
Further, as shown in FIG. 2, the nonwoven fabric 11 can be formed in a spiral shape to form the cylindrical polishing cloth body 10.
【００１５】すなわち、研磨クロス体１０はウェーハ外
径あるいは予定研磨回数に応じて厚さ２〜５ｍｍ程度の
不織布を同心円状、渦巻き状に巻いて直径１００〜８０
０ｍｍ、高さ２０〜３００ｍｍの円柱状となし、例え
ば、内径部を貫通する心棒材の両端にフランジにて挟み
込み固定する構成等が採用できる。巻き付けた不織布を
固定でき研磨体自体を回転駆動可能にする機構を具備で
きる構成であればいずれの構成も採用可能である。回転
駆動も上記心棒材の一方あるいは両方を支持して回転駆
動する構成から後述のウェーハとの位置合わせを行うた
めに、回転駆動可能に支持機構全体が所要方向に移動可
能に構成されるなどの種々の構成が採用できる。That is, the polishing cloth body 10 is formed by concentrically or spirally winding a nonwoven fabric having a thickness of about 2 to 5 mm according to the outer diameter of the wafer or the planned number of polishing operations.
A cylindrical shape having a height of 0 mm and a height of 20 to 300 mm may be employed. For example, a configuration may be adopted in which the mandrel is sandwiched and fixed to both ends of a mandrel penetrating the inner diameter portion by flanges. Any configuration can be adopted as long as the configuration can provide a mechanism that can fix the wound nonwoven fabric and can rotate and drive the polishing body itself. From the configuration in which the rotary drive also supports one or both of the mandrel members and performs the rotary drive, in order to perform alignment with a wafer described later, the entire support mechanism is configured to be rotatable and movable in a required direction. Various configurations can be employed.
【００１６】不織布は材質的には、ポリエステル、ナイ
ロン等の合成繊維質とウレタンなどの合成ゴムからなる
が、繊維質とゴムの量比は選定する材質の組合せにより
適宜選定する必要があり、不織布の硬度は、ＪＩＳＡ硬
度で５０°未満では、所要の形態に形成できないほか研
磨寿命が短くなる問題があり、逆に、９５°を越えると
面取り部全域を一度に研磨できなくなり、また研磨疵が
発生し易くなるなどの問題があるため、硬度は５０°〜
９５°の範囲とする。さらに好ましい硬度は、６０°〜
７０°の範囲である。The nonwoven fabric is made of synthetic fibers such as polyester and nylon and synthetic rubber such as urethane. The ratio of the fibrous materials to the rubber needs to be appropriately selected depending on the combination of the selected materials. If the hardness is less than 50 ° in JISA hardness, it cannot be formed into a required form and the polishing life is shortened. Conversely, if it exceeds 95 °, the entire chamfered area cannot be polished at once, and polishing flaws are not generated. Hardness is 50 ° ~
The range is 95 °. More preferred hardness is from 60 °
The range is 70 °.
【００１７】前記ウェーハ１の保持・回転機構１２に
は、ここではウェーハ１の下面を吸着保持して回転する
バキューム型の構成を採用するが、吸着面を逆方向とし
たり、接着したり両面より挟むなどいずれの固着方法も
採用することができる。The holding / rotating mechanism 12 for the wafer 1 employs a vacuum type configuration in which the lower surface of the wafer 1 is sucked and held and rotated. Any fixing method such as pinching can be adopted.
【００１８】前記ウェーハ１と不織布からなる研磨クロ
ス体１０を一定圧力で接触させる押圧機構、また、ウェ
ーハ１の位置合わせを行うための位置制御機構は、前記
ウェーハ１の保持・回転機構１２と研磨クロス体１０機
構のいずれかを固定側として、一方を移動可能に位置制
御を行う構成や、双方を移動可能にして所定の原点より
位置制御を行う構成などが採用できる。A pressing mechanism for bringing the wafer 1 into contact with the polishing cloth body 10 made of non-woven fabric at a constant pressure, and a position control mechanism for aligning the wafer 1 include a holding and rotating mechanism 12 for the wafer 1 and a polishing mechanism. A configuration in which one of the mechanisms of the cross body 10 is set to the fixed side and one of the mechanisms is movable so as to perform position control, or a configuration in which both are movable and position control is performed from a predetermined origin can be adopted.
【００１９】前記研磨クロス体１０を芯出し成形するた
め芯出し機構には、例えば、不織布の材質や硬度に応じ
てダイヤモンド砥粒の番手を適宜選定したダイヤモンド
砥石１３を、研磨体に当接させて所定の真円度となるよ
うに研磨する構成の他に、バイトなどの切削治具を研磨
体に当接させる等の機構が採用できる。The centering mechanism for centering and forming the polishing cloth body 10 includes, for example, a diamond grinding stone 13 appropriately selected according to the material and hardness of the non-woven fabric, in contact with the grinding body. In addition to a configuration in which the workpiece is polished so as to have a predetermined roundness, a mechanism such as bringing a cutting jig such as a cutting tool into contact with the polishing body can be employed.
【００２０】ノズル２０から所定の砥液を滴下するため
の研磨液機構には、所定のタンクからポンプで圧送する
等の機構が採用できる。砥液としては、ＳｉＯ2等の研
磨剤を含むアルカリ性研磨液が好ましい。As a polishing liquid mechanism for dropping a predetermined polishing liquid from the nozzle 20, a mechanism such as pumping from a predetermined tank by a pump can be adopted. As the polishing liquid, an alkaline polishing liquid containing a polishing agent such as SiO 2 is preferable.
【００２１】次に上述のごとく構成される鏡面化装置の
作動について説明する。まず、電動モーターの駆動下に
回転軸を介して研磨クロス体１０が回転され、ダイヤモ
ンド砥石１３を回転させながら近づけ、研磨クロス体１
０の芯出し成形を行う。次いで、半導体ウェーハ１が、
ウェーハ保持・回転機構１２を構成する回転台１２上に
配置され、真空ポンプの作用下に吸引穴を介してこの回
転台に吸着される。Next, the operation of the mirror making device constructed as described above will be described. First, the polishing cloth body 10 is rotated via a rotating shaft under the drive of an electric motor, and the diamond grindstone 13 is moved closer to the polishing cloth body 1 while rotating.
A centering molding of 0 is performed. Next, the semiconductor wafer 1
It is arranged on a turntable 12 constituting the wafer holding / rotating mechanism 12, and is sucked by the turntable through a suction hole under the action of a vacuum pump.
【００２２】研磨される半導体ウェーハ１を回転させ、
また、研磨クロス体１０を回転させて互いに近接する方
向に移動させ、ウェーハ１の面取り部を不織布面に一定
圧力で接触させて、ノズル２０より砥液を噴射させなが
ら研磨を行う。この際、図３に示すごとく、ウェーハ１
の外周部は不織布１１の端面に埋入するように面取り部
全体が接触し、不織布１１に保持された研磨液とともに
研磨され、一回でウェーハ１の端面１ａとテーパー面１
ｂ，１ｂを研磨できる。Rotating the semiconductor wafer 1 to be polished,
In addition, the polishing cloth body 10 is rotated and moved in a direction approaching each other, the chamfered portion of the wafer 1 is brought into contact with the nonwoven fabric surface at a constant pressure, and polishing is performed while the abrasive liquid is jetted from the nozzle 20. At this time, as shown in FIG.
Of the wafer 1 comes into contact with the entire chamfered portion so as to be embedded in the end face of the nonwoven fabric 11, is polished together with the polishing liquid held by the nonwoven fabric 11, and the end face 1a of the wafer 1 and the tapered face 1
b, 1b can be polished.
【００２３】一定枚数研磨後、ウェーハ１と不織布１１
の接触位置を変えて研磨を行う。これを繰り返した後、
クロスライフ終了時には、前記ダイヤモンドホィールに
て、研磨クロス体１０の外径を、１ｍｍ程度小さく芯出
し成形を行い、再び研磨を行うことができる。なお、研
磨クロス体１０表面に不織布１１同士の固着のための接
着剤が露出した場合はこれを切削する。After polishing a certain number of wafers, the wafer 1 and the nonwoven fabric 11
Polishing is performed by changing the contact position of. After repeating this,
At the end of the cross life, the outer diameter of the polishing cloth body 10 is reduced to about 1 mm by centering using the diamond wheel, and the polishing can be performed again. When the adhesive for fixing the nonwoven fabrics 11 is exposed on the surface of the polishing cloth 10, the adhesive is cut.
【００２４】また、研磨クロス体１０の回転軸を傾ける
ことによって、研磨クロスとウェーハ１の接触面積を上
げることができ、研磨能率を上げることが可能であり、
さらに、また、ここでは、研磨体１０の回転軸を傾斜さ
せたが、ウェーハ１側の回転軸を傾斜あるいは双方を傾
斜させることも可能である。By tilting the rotation axis of the polishing cloth body 10, the contact area between the polishing cloth and the wafer 1 can be increased, and the polishing efficiency can be increased.
Furthermore, although the rotation axis of the polishing body 10 is inclined here, the rotation axis of the wafer 1 may be inclined or both may be inclined.
【００２５】[0025]
【実施例】前述した図１に示す鏡面研磨装置を用いて、
研磨クロス体の外径は２００ｍｍ、高さを５０ｍｍの円
柱状に渦巻き状に巻いて接着された研磨クロス体を用い
て研磨を行った。バイトによる研磨クロス体芯出し成形
時間は６０秒程度で可能であった。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The mirror polishing apparatus shown in FIG.
Polishing was performed using a polishing cloth body that was spirally wound and adhered in a cylindrical shape having an outer diameter of 200 mm and a height of 50 mm. The centering time of the polishing cloth body with the cutting tool was about 60 seconds.
【００２６】研磨クロス体を用いることにより、溝成形
することなしに面取り部の端面及びテーパ一面を一度に
研磨することができた。また、研磨クロス体は砥液の保
持性に優れ、短時間での研磨が可能であった。研磨クロ
ス体は渦巻き状に巻いて接着されているため、研磨時に
は必す接着面が現れるが、研磨クロス体の接着面にウエ
ーハが接触することによる影響はなく、ウエーハの面取
り部全域を良好な鏡面研磨することができた。By using the polishing cloth, the end face of the chamfered portion and one face of the taper could be polished at once without forming a groove. Further, the polishing cloth body was excellent in holding property of the polishing liquid, and was capable of polishing in a short time. Since the polishing cloth body is spirally wound and bonded, a required bonding surface appears during polishing.However, there is no effect due to the wafer contacting the bonding surface of the polishing cloth body, and the entire chamfered area of the wafer is excellent. Mirror polishing was possible.
【００２７】さらに図１Ａにおいて、一ケ所で一定枚数
研磨後、接触位置を高さ方向に１ｍｍずらし研磨を行
う。これを繰り返し研磨クロス体の側面を無駄なく使用
することができた。また、研磨中にクロス回転軸とウエ
ーハを相対的に高さ方向に移動させながら接触させ研磨
することもできた。Further, as shown in FIG. 1A, after polishing a predetermined number of sheets at one location, the contact position is shifted by 1 mm in the height direction, and polishing is performed. This was repeated, and the side surface of the polishing cloth body could be used without waste. Also, it was possible to polish the wafer while moving the cloth rotating shaft and the wafer relatively in the height direction during polishing.
【００２８】研磨クロス体の側面すべてで研磨後、上記
ダイヤモンド砥石にて外径を１９９ｍｍにｌｍｍ小さく
再芯出し成形した後、研磨を行った。研磨状態は初めと
何ら変わりない良好な鏡面が得られた。この動作を繰り
返し、外径１００ｍｍまで加工することができた。この
ことにより、研磨クロス体の交換なしで数万枚の加工が
できた。さらに、研磨クロス体の交換も従来の張り替え
と異なり、容易で短時間での交換が可能であった。After polishing the entire side surface of the polishing cloth body, the outer diameter was reduced to 1 mm to 199 mm with the above-mentioned diamond grindstone, and recentering was performed. A good mirror surface was obtained, the polishing condition being no different from the beginning. This operation was repeated, and processing was possible up to an outer diameter of 100 mm. As a result, tens of thousands of sheets could be processed without replacing the polishing cloth. Further, the replacement of the polishing cloth was different from the conventional replacement, and the replacement was easy and in a short time.
【００２９】[0029]
【発明の効果】この発明による半導体ウエーハの面取り
部鏡面化方法によれば、芯出し成形可能な研磨クロス体
の外周面の適度な弾性を有する不織布クロスを研磨に用
いることにより、図３に示すように一度に面取り部の端
面及びテーパ一面の全域の研磨が可能であり、また砥液
の保持性にも優れているため短時間での研磨が可能であ
る。According to the method for mirror-polishing a chamfered portion of a semiconductor wafer according to the present invention, a non-woven cloth cloth having moderate elasticity on the outer peripheral surface of a polishing cloth body which can be centered and formed is used for polishing as shown in FIG. As described above, the entire surface of the end face of the chamfered portion and the entire surface of the taper can be polished at a time, and the polishing liquid can be polished in a short time because of excellent holding property of the polishing liquid.
【００３０】さらに、クロスライフ時にはバイトまたは
ダイヤモンド砥石にて再び芯出し成形を行うことにより
再び使用でき、一個の研磨クロス体で従来とは比較でき
ないほどのクロスライフを得ることができる。また、こ
の発明による鏡面研磨装置は完全自動が可能であり、不
織布は柔らかくウェーハに傷を付けることが少なく、研
磨方向にスジ状の研磨痕がない完全な鏡面が得られる。Further, the cross life can be re-used by re-centering with a cutting tool or a diamond grindstone at the time of cross life, and a cross life which cannot be compared with the conventional one can be obtained with one polishing cloth body. In addition, the mirror polishing apparatus according to the present invention can be fully automated, the nonwoven fabric is soft and scarcely damages the wafer, and a complete mirror surface having no streak-like polishing marks in the polishing direction can be obtained.
【図１】Ａ，Ｂはこの発明による鏡面研磨装置の上面説
明図と正面説明図である。FIGS. 1A and 1B are a top view and a front view of a mirror polishing apparatus according to the present invention.
【図２】この発明による他の研磨クロス体の斜視説明図
である。FIG. 2 is an explanatory perspective view of another polishing cloth body according to the present invention.
【図３】この発明による研磨時の研磨クロスと半導体ウ
ェーハの関係を示す説明図である。FIG. 3 is an explanatory diagram showing a relationship between a polishing cloth and a semiconductor wafer during polishing according to the present invention.
【図４】Ａは従来のウレタン樹脂、硬化剤及び発泡剤か
らなる円形研磨板での半導体ウェーハ端面研磨時を示す
説明図であり、Ｂは半導体ウェーハテ一パー面研磨時を
示す説明図である。FIG. 4A is an explanatory view showing a conventional circular polishing plate made of a urethane resin, a curing agent, and a foaming agent when polishing the semiconductor wafer end face, and FIG. 4B is an explanatory view showing a conventional semiconductor wafer taper surface polishing. .
１ 半導体ウェーハ １ａ 端面 １ｂ，１ｂ テーパー面 ２ 円形研磨板 ３ Ｖ字型溝部 １０ 研磨クロス体 １１ 不織布 １２ 保持・回転機構 １３ ダイヤモンド砥石 ２０ ノズル DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 1a End surface 1b, 1b Taper surface 2 Circular polishing plate 3 V-shaped groove part 10 Polishing cloth body 11 Nonwoven fabric 12 Holding / rotating mechanism 13 Diamond grindstone 20 Nozzle
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成９年３月３日[Submission date] March 3, 1997
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】発明の名称[Correction target item name] Name of invention
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【発明の名称】 半導体ウェーハの面取り部鏡面化方法
とその装置Patent application title: METHOD AND APPARATUS FOR MIRRORING Chamfered Part of Semiconductor Wafer
Claims (3)
る研磨クロスと研磨液で鏡面研磨する面取り部の鏡面化
方法において、不織布を渦巻き状または同心円状に巻い
て円柱状にした研磨クロス体を用い、該研麿クロス体を
回転させその外周面に半導体ウエーハの外周面取り部を
接触させ鏡面研磨する半導体ウエーハの面取り部鏡面化
方法。1. A method for mirror-polishing a polishing cloth for rotating an outer chamfered portion of a semiconductor wafer and a chamfered portion for mirror-polishing with a polishing liquid, wherein a nonwoven fabric is spirally or concentrically wound into a columnar polishing cloth. And a method of mirror-polishing a chamfered portion of a semiconductor wafer by rotating the Kentaro cloth body and bringing an outer peripheral chamfered portion of the semiconductor wafer into contact with an outer peripheral surface thereof to perform mirror polishing.
がＪＩＳＡ硬度で５０°〜９５°の範囲である半導体ウ
エーハの面取り部鏡面化方法。2. The method according to claim 1, wherein the hardness of the nonwoven fabric cloth is in the range of 50 ° to 95 ° in terms of JISA hardness.
て円柱状にした研磨クロス体を回転駆動させる研磨体回
転駆動機構と、半導体ウェーハの保持回転機構と、前記
ウェーハの外周面取り部と研磨体の外周面を一定圧力で
接触させる際に相対的に押圧並びにウェーハの位置合わ
せを行う位置制御機構と、前記研磨クロス体を芯出し成
形するための切削治具を有する芯出し機構と、前記接触
部に所定の砥液を滴下可能にした研磨液機構とを有して
いる半導体ウェーハの面取り部鏡面化装置。3. A polishing body rotation drive mechanism for rotating a polishing cloth body formed by spirally or concentrically winding a nonwoven fabric into a cylindrical shape, a semiconductor wafer holding / rotation mechanism, an outer peripheral chamfered portion of the wafer, and a polishing body. A position control mechanism for relatively pressing and aligning the wafer when the outer peripheral surface of the polishing pad is brought into contact with a constant pressure; a centering mechanism having a cutting jig for centering and forming the polishing cloth body; And a polishing liquid mechanism capable of dropping a predetermined polishing liquid onto a portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35831396A JPH10189510A (en) | 1996-12-27 | 1996-12-27 | Method and apparatus for formation of specular chamfered part at semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35831396A JPH10189510A (en) | 1996-12-27 | 1996-12-27 | Method and apparatus for formation of specular chamfered part at semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10189510A true JPH10189510A (en) | 1998-07-21 |
Family
ID=18458655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35831396A Pending JPH10189510A (en) | 1996-12-27 | 1996-12-27 | Method and apparatus for formation of specular chamfered part at semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10189510A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001028739A1 (en) * | 1999-10-18 | 2001-04-26 | Kabushiki Kaisha Ishiihyoki | Device for polishing outer peripheral edge of semiconductor wafer |
| DE19930754B4 (en) * | 1998-07-03 | 2004-08-05 | Toyoda Gosei Co., Ltd., Nishikasugai | Instrument panel and process for its manufacture |
| DE10147761B4 (en) * | 2000-09-28 | 2010-01-14 | Sharp K.K. | Method for producing silicon wafers |
-
1996
- 1996-12-27 JP JP35831396A patent/JPH10189510A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19930754B4 (en) * | 1998-07-03 | 2004-08-05 | Toyoda Gosei Co., Ltd., Nishikasugai | Instrument panel and process for its manufacture |
| WO2001028739A1 (en) * | 1999-10-18 | 2001-04-26 | Kabushiki Kaisha Ishiihyoki | Device for polishing outer peripheral edge of semiconductor wafer |
| DE10147761B4 (en) * | 2000-09-28 | 2010-01-14 | Sharp K.K. | Method for producing silicon wafers |
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