JPH10163291A - Semiconductor device manufacturing apparatus - Google Patents
Semiconductor device manufacturing apparatusInfo
- Publication number
- JPH10163291A JPH10163291A JP32247396A JP32247396A JPH10163291A JP H10163291 A JPH10163291 A JP H10163291A JP 32247396 A JP32247396 A JP 32247396A JP 32247396 A JP32247396 A JP 32247396A JP H10163291 A JPH10163291 A JP H10163291A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- reaction chamber
- pressure
- gate valve
- manufacturing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体製造装置に関
し、更に詳しくは、反応室と、該反応室と隣設する予備
室と、前記反応室と前記予備室とを相連通及び相遮断す
るべく開閉するゲートバルブとを備え、半導体ウエハを
前記予備室から前記反応室へ搬入するとき及び前記反応
室から前記予備室へ搬出するときに、前記ゲートバルブ
を開くようにした半導体製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a reaction chamber, a preparatory chamber adjacent to the reaction chamber, and a communication between the reaction chamber and the preparatory chamber. The present invention relates to a semiconductor manufacturing apparatus comprising: a gate valve that opens and closes, and the gate valve is opened when a semiconductor wafer is carried into the reaction chamber from the preliminary chamber and when the semiconductor wafer is carried out from the reaction chamber to the preliminary chamber.
【０００２】[0002]
【従来の技術】従来のこの種の半導体製造装置では、ゲ
ートバルブを開くタイミングを、反応室での半導体ウエ
ハの処理が終了して反応室の圧力が設定圧力以下になっ
た事や、反応室での半導体ウエハの処理が終了して、あ
る設定時間を経過した事、またはあるメカ的なタイミン
グを取ることで行っていた。これによりゲートバルブを
開く際に、反応室と予備室の圧力差が生じ、その差圧に
より気流が生じて、反応室（プロセスチャンバともい
う）やゲートバルブ付近の副生成物であるデポジション
（ｄｅｐｏｓｉｔｉｏｎ）生成物やその他のパーティク
ルを巻上げ半導体ウエハへ付着させてしまう。近年の半
導体ウエハの微細化により、このパーティクルが歩留り
低下の第一要因となり、半導体製造装置管理において
は、このパーティクル管理が重要な問題となっている。2. Description of the Related Art In a conventional semiconductor manufacturing apparatus of this type, the timing of opening a gate valve is determined by the fact that the processing of a semiconductor wafer in a reaction chamber is completed and the pressure in the reaction chamber becomes equal to or lower than a set pressure. The processing of the semiconductor wafer has been completed, and a certain set time has elapsed or a certain mechanical timing has been taken. As a result, when the gate valve is opened, a pressure difference between the reaction chamber and the preliminary chamber is generated, and an airflow is generated by the pressure difference, and deposition (by-products near the reaction chamber (also referred to as a process chamber) and the gate valve) is generated. Deposition products and other particles adhere to the wound semiconductor wafer. Due to the recent miniaturization of semiconductor wafers, these particles have become a primary factor in lowering the yield, and the particle management has become an important issue in the management of semiconductor manufacturing equipment.
【０００３】[0003]
【発明が解決しようとする課題】本発明は上記問題に鑑
みてなされ、パーティクルによる歩留り低下を防止する
半導体製造装置を提供することを課題とする。SUMMARY OF THE INVENTION The present invention has been made in consideration of the above problems, and has as its object to provide a semiconductor manufacturing apparatus which prevents a decrease in yield due to particles.
【０００４】[0004]
【課題を解決するための手段】上記課題は、反応室と、
該反応室と隣設する予備室と、前記反応室と前記予備室
とを相連通及び相遮断するべく開閉するゲートバルブと
を備え、半導体ウエハを前記予備室から前記反応室へ搬
入するとき及び前記反応室から前記予備室へ搬出すると
きに、前記ゲートバルブを開くようにした半導体製造装
置において、排気中の前記反応室と前記予備室との圧力
差が設定圧力以下になったことを検知すると、前記ゲー
トバルブを開くようにしたことを特徴とする半導体製造
装置、又は、反応室と、該反応室と隣設する予備室と、
前記反応室と前記予備室とを相連通及び相遮断するべく
開閉するゲートバルブとを備え、半導体ウエハを前記予
備室から前記反応室へ搬入するとき及び前記反応室から
前記予備室へ搬出するときに、前記ゲートバルブを開く
ようにした半導体製造装置において、所定の条件下で排
気中の前記反応室と前記予備室との圧力差が設定圧力以
下になった ことを検知すると、前記ゲートバルブを開
くようにしたことを特徴とする半導体製造装置、によっ
て解決される。The object of the present invention is to provide a reaction chamber,
A preparatory chamber adjacent to the reaction chamber, and a gate valve that opens and closes to open and close the reaction chamber and the preparatory chamber, when loading a semiconductor wafer from the preparatory chamber into the reaction chamber; and In the semiconductor manufacturing apparatus in which the gate valve is opened when unloading from the reaction chamber to the preliminary chamber, it is detected that a pressure difference between the reaction chamber and the preliminary chamber during exhaustion has become equal to or less than a set pressure. Then, the semiconductor manufacturing apparatus characterized in that the gate valve was opened, or a reaction chamber, and a spare chamber adjacent to the reaction chamber,
A gate valve that opens and closes to open and close the reaction chamber and the preliminary chamber to and from each other, and when a semiconductor wafer is loaded from the preliminary chamber into the reaction chamber and when the semiconductor wafer is transported from the reaction chamber to the preliminary chamber. In a semiconductor manufacturing apparatus in which the gate valve is opened, when it is detected that a pressure difference between the reaction chamber and the spare chamber during exhaustion under a predetermined condition has become equal to or less than a set pressure, the gate valve is opened. A semiconductor manufacturing apparatus characterized in that it is opened.
【０００５】[0005]
【発明の実施の形態】図１は本発明の実施の形態による
半導体製造装置を示すが、全体として１で示され反応室
２に隣設して予備室３が設けられ、この間にゲートバル
ブ４が開閉自在に設けられている。反応室２は配管６を
介して排気用真空ポンプ５に接続される。この配管６に
は排気系開閉バルブ７が設けられている。同様にして予
備室３には配管９を介して排気用真空ポンプ８が設けら
れており、この配管９に排気系開閉バルブ１０が設けら
れている。反応室２には更に反応ガスもしくはプロセス
ガスを導入するための配管１５が接続されており、また
この反応ガスを供給、停止するためのバルブ１６が設け
られている。反応室２及び予備室３には圧力計１１、１
２が接続されており、この反応室２内及び予備室３内の
圧力を検出し、この検出信号は制御装置１４に供給され
る。ゲートバルブ４はゲート駆動システム１３によって
駆動されるのであるが、この駆動信号は制御装置１４か
ら供給される。予備室３の外部から半導体ウエハを導入
する開口部にはゲートバルブ１８が設けられており、半
導体ウエハを外部より導入する際に開かれる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a semiconductor manufacturing apparatus according to an embodiment of the present invention. A preliminary chamber 3 is provided as a whole adjacent to a reaction chamber 2 and a gate valve 4 is provided therebetween. Are provided to be freely opened and closed. The reaction chamber 2 is connected to an exhaust vacuum pump 5 via a pipe 6. The piping 6 is provided with an exhaust system opening / closing valve 7. Similarly, an evacuation vacuum pump 8 is provided in the preliminary chamber 3 via a pipe 9, and an evacuation system opening / closing valve 10 is provided in the pipe 9. The reaction chamber 2 is further connected to a pipe 15 for introducing a reaction gas or a process gas, and is provided with a valve 16 for supplying and stopping the reaction gas. Pressure gauges 11 and 1 are provided in the reaction chamber 2 and the preliminary chamber 3.
2 is connected to detect the pressure in the reaction chamber 2 and the pressure in the preliminary chamber 3, and this detection signal is supplied to the control device 14. The gate valve 4 is driven by a gate drive system 13, and this drive signal is supplied from a control device 14. A gate valve 18 is provided at an opening for introducing a semiconductor wafer from the outside of the preliminary chamber 3 and is opened when the semiconductor wafer is introduced from the outside.
【０００６】制御装置１４内には上述の圧力計１１、１
２の検出信号を受け、その差を演算する演算器が設けら
れており、この演算結果がやはり同装置１４内に設けら
れている比較器の一方の入力端子に供給され、この他方
の入力端子には所定の圧力値（この差圧は充分に小さ
く、反応室２と予備室３との間では殆ど気流を生じない
程度に小さい）が設定されており、これと比較して、こ
の設定圧力値より以下になるとゲート駆動システム１３
を駆動する信号を発生する。これによりゲートバルブ４
が開閉され、更に制御装置１４内には各種のタイマーが
設けられており、後述するような種々の作用の限時を行
っている。なお反応室２及び予備室３内には半導体ウエ
ハを支持する支持構造は示されていないが、従来と同様
に設けられているものとする。更にこの支持構造上の半
導体ウエハの予備室３から反応室２への搬入、及び、反
応室２から予備室３への搬出を行なうロボットが設けら
れているものとする。In the control device 14, the above-mentioned pressure gauges 11, 1
And a calculation unit for calculating the difference between the two input terminals is provided to one input terminal of a comparator also provided in the same device 14, and the other input terminal Is set to a predetermined pressure value (the differential pressure is sufficiently small and small enough to cause almost no airflow between the reaction chamber 2 and the preparatory chamber 3). When the value is less than the value, the gate drive system 13
To generate a signal for driving. This allows the gate valve 4
Are opened and closed, and various timers are provided in the control device 14 to perform time limits for various operations as described later. Although a support structure for supporting the semiconductor wafer is not shown in the reaction chamber 2 and the preliminary chamber 3, it is assumed that the support structure is provided in the same manner as in the related art. Further, it is assumed that a robot is provided for carrying the semiconductor wafer on the support structure from the preliminary chamber 3 to the reaction chamber 2 and for transporting the semiconductor wafer from the reaction chamber 2 to the preliminary chamber 3.
【０００７】本発明の実施の形態による半導体製造装置
１は以上のように構成されるが、次にこの作用について
図２を参照して説明する。The semiconductor manufacturing apparatus 1 according to the embodiment of the present invention is configured as described above. Next, this operation will be described with reference to FIG.
【０００８】初期の状態においては（時間Ｔ0 ）、反応
室２には図示せずとも支持構造には半導体ウエハが支持
されておらず、またゲートバルブ４は閉じている。他
方、ゲートバルブ１８は開いている。図２Ａで示すよう
に、反応室２内は配管６を介して排気用真空ポンプ５に
より排気されており（排気系開閉バルブ７は開）、圧力
Ｐ1 に減圧保持されている。反応処理すべき半導体ウエ
ハは、右側開口部（ゲートバルブ１８は開）を通って予
備室３内に導入される。ゲートバルブ１８を閉じ、時間
Ｔ1 で、排気系開閉バルブ１０を開とし、排気用真空ポ
ンプ８を駆動開始する。これにより図２Ｂに示すよう
に、時間Ｔ1 より大気圧Ｐ2 から圧力が低下していく。
他方、圧力計１１及び１２により、それぞれ反応室２及
び予備室３内の圧力が測定されており、この測定結果が
制御装置１４に供給されている。制御装置１４内には両
圧力計１１、１２の検出出力の受け、その差を演算する
演算器が設けられているが、この演算結果が比較器の一
方の入力端子に供給される。この他方の入力端子には所
定値、すなわち差圧許容値が入力されている。反応室２
と予備室３との差圧は図２Ｃに示すように時間Ｔ1 より
低下して行くが時間Ｔ2で差圧Ｐ3 に達し、更に低下す
ると制御装置１４からゲート駆動システム１３に駆動信
号を与えゲートバルブ４を開く。図２Ｄにはこの開くタ
イミングが図示されており、開いている時間がタイマー
により制御装置１４内に設定されており、この時間（Ｔ
3 −Ｔ2 ）が経過するとゲートバルブ４は再び閉じる。
すなわち図２Ｄにおいて、ゲート開を表すハイレベルは
０−レベルとなる。予備室３はなおも排気用真空ポンプ
８で排気されているので、図２Ｂで示すように減圧力Ｐ
4 を維持する。時間Ｔ4 でバルブ１６を開としてプロセ
スガスが配管１５を介して反応室２内に導入する。これ
により反応室２内の圧力は図２Ａで示すように上昇す
る。排気用真空ポンプ５はなおも駆動されているので圧
力Ｐ5 で時間Ｔ5 から定常状態となり、この間、予備室
３から導入された半導体ウエハに所定の処理を行なう。
例えばエッチング、ＣＶＤなどである。この処理が所定
時間（Ｔ6 −Ｔ5）行われると（この所定時間は制御装
置１４内に設定されている）、バルブ１６を閉じてプロ
セスガスの供給を停止する。In the initial state (time T 0 ), the semiconductor wafer is not supported by the support structure (not shown) in the reaction chamber 2 and the gate valve 4 is closed. On the other hand, the gate valve 18 is open. As shown in Figure 2A, the reaction chamber 2 is being exhausted by the exhaust vacuum pump 5 through the pipe 6 (exhaust system close valve 7 open), is depressurized held in pressure P 1. The semiconductor wafer to be subjected to the reaction treatment is introduced into the preliminary chamber 3 through the right opening (the gate valve 18 is open). Close the gate valve 18, at time T 1, the exhaust system close valve 10 is opened, to start driving the exhaust vacuum pump 8. Thus, as shown in FIG. 2B, it decreases the pressure from the time T 1 from the atmospheric pressure P 2.
On the other hand, the pressures in the reaction chamber 2 and the preliminary chamber 3 are measured by the pressure gauges 11 and 12, respectively, and the measurement results are supplied to the control device 14. The control unit 14 is provided with a calculator for receiving the detection outputs of the two pressure gauges 11 and 12 and calculating the difference between them. The calculation result is supplied to one input terminal of the comparator. A predetermined value, that is, a differential pressure allowable value is input to the other input terminal. Reaction chamber 2
As shown in FIG. 2C, the pressure difference between the pressure and the preparatory chamber 3 becomes lower than the time T 1, but reaches the pressure difference P 3 at the time T 2. The giving gate valve 4 is opened. FIG. 2D shows the timing of this opening, and the opening time is set in the control device 14 by a timer.
When 3- T 2 ) has elapsed, the gate valve 4 closes again.
That is, in FIG. 2D, the high level indicating the gate opening is the 0-level. Since the preliminary chamber 3 is still evacuated by the evacuation vacuum pump 8, as shown in FIG.
Keep 4 At time T 4 , the valve 16 is opened and the process gas is introduced into the reaction chamber 2 via the pipe 15. Thereby, the pressure in the reaction chamber 2 increases as shown in FIG. 2A. Since the exhaust vacuum pump 5 is still driven consist time T 5 by the pressure P 5 in the steady state, during which performs a predetermined process on a semiconductor wafer that has been introduced from the preliminary chamber 3.
For example, etching, CVD, etc. When this processing is performed for a predetermined time (T 6 −T 5 ) (the predetermined time is set in the control device 14), the valve 16 is closed to stop the supply of the process gas.
【０００９】他方、排気用真空ポンプ５はなおも駆動し
ているので反応室２内の圧力は圧力Ｐ1 まで低下する。
この低下中、圧力計１１、１２の検出出力は制御装置１
４内の演算器に供給されて差圧が演算されており、これ
が図２Ｃで示すように、時間Ｔ7 において設定圧Ｐ3 よ
り低下すると制御装置１４からゲート駆動システム１３
にゲート駆動信号を供給し、ゲートバルブ１４を開く。
反応室２内から処理済の半導体ウエハが図示しないロボ
ットにより予備室３内に搬入される。上述と同様にゲー
トバルブ１４は所定時間、開位置をとると閉じる。図２
Ｂではこの開閉のタイミングが示されている。図２Ｂで
示すように、時間Ｔ9 で排気用真空ポンプ８の駆動を停
止し時間Ｔ9 でゲートバルブ１８が開放される。これに
より予備室３内の圧力は、図２Ｂで示すように上昇し、
大気圧Ｐ2 と同圧になると処理済の半導体ウエハを外方
に搬出する。以下、上述と同様な操作を繰り返す。On the other hand, since the evacuation vacuum pump 5 is still driven, the pressure in the reaction chamber 2 drops to the pressure P 1 .
During this decrease, the detection outputs of the pressure gauges 11 and 12 are
Is supplied to the arithmetic unit 4 by the pressure difference has been computed, it is as shown in FIG. 2C, time set in T 7 pressure P 3 gate driving system 13 from the control unit 14 drops below
, And the gate valve 14 is opened.
A processed semiconductor wafer is carried into the preliminary chamber 3 from the reaction chamber 2 by a robot (not shown). As described above, the gate valve 14 closes when it is in the open position for a predetermined time. FIG.
B shows the timing of this opening and closing. As shown in FIG. 2B, the gate valve 18 is opened to drive the exhaust vacuum pump 8 is stopped and the time T 9 at time T 9. Thereby, the pressure in the preliminary chamber 3 rises as shown in FIG.
Unloading the the processed semiconductor wafer and the atmospheric pressure P 2 at the same pressure outward. Hereinafter, the same operation as described above is repeated.
【００１０】本発明の実施の形態による半導体製造装置
は以上のように構成され、作用するので、ゲートバルブ
１４を開ける度に予備室３内から反応室２内に、あるい
は反応室２内から予備室３内にパーティクルを巻上げる
程の気流が生じず、従って処理済の半導体ウエハが汚染
されることなく、その歩留りの低下を防止することがで
きる。Since the semiconductor manufacturing apparatus according to the embodiment of the present invention is constructed and operates as described above, every time the gate valve 14 is opened, the spare chamber 3 enters the reaction chamber 2 or the spare chamber 3 enters the spare chamber. An airflow that does not wind up the particles in the chamber 3 is generated, so that the processed semiconductor wafer is not contaminated and the yield can be prevented from lowering.
【００１１】以上、本発明の実施の形態について説明し
たが、勿論、本発明はこれに限られることなく、本発明
の技術的思想に基いて種々の変形が可能である。Although the embodiments of the present invention have been described above, the present invention is, of course, not limited thereto, and various modifications can be made based on the technical concept of the present invention.
【００１２】例えば以上の実施の形態では、単に反応室
２と予備室３との間の差圧を検知してこれが所定値以下
になるとゲートバルブ４を開くようにしたが、これに更
に所定の条件を加えるようにしてもよい。これによって
パーティクルの舞い上がり防止を、より確実に行なうこ
とができる。例えばこの所定の条件は、外部から半導体
ウエハが予備室３に搬入されると、上述したようにゲー
トバルブ１８を閉じて排気用真空ポンプ８を駆動して予
備室３内の圧力を低下させるのであるが、この予備室３
内の圧力が所定の圧力になったこととし、上述のように
反応室２と予備室３との間の差圧が所定値以下になった
こととでゲートバルブ４を開いてもよい。For example, in the above embodiment, the gate valve 4 is opened when the pressure difference between the reaction chamber 2 and the preparatory chamber 3 is reduced to a predetermined value or less. Conditions may be added. This makes it possible to more reliably prevent the particles from rising. For example, under this predetermined condition, when a semiconductor wafer is carried into the preliminary chamber 3 from the outside, the gate valve 18 is closed and the vacuum pump 8 for exhaust is driven to lower the pressure in the preliminary chamber 3 as described above. There is a spare room 3
The gate valve 4 may be opened when the internal pressure becomes a predetermined pressure and the differential pressure between the reaction chamber 2 and the preliminary chamber 3 becomes equal to or lower than a predetermined value as described above.
【００１３】あるいは上記所定の条件は、半導体ウエハ
が予備室３に搬入されてから所定時間を経過したことと
し、上述の差圧が設定値以下になったことで、ゲートバ
ルブ４を開いてもよい。Alternatively, the predetermined condition is that a predetermined time has elapsed since the semiconductor wafer was loaded into the preparatory chamber 3 and that the gate valve 4 was opened when the above-mentioned differential pressure became equal to or less than the set value. Good.
【００１４】あるいは上記所定の条件は、反応室２で半
導体ウエハの所定の反応処理、例えば上述したようなＣ
ＶＤやエッチングの処理が終了するとプロセスガスが導
入されなくなるのであるが、反応室２の圧力が所定の圧
力以下になったこととし、上述の差圧が所定値以下にな
ったこととで、ゲートバルブ４を開くようにしてもよ
い。Alternatively, the predetermined condition is a predetermined reaction processing of the semiconductor wafer in the reaction chamber 2, for example, C
When the VD or etching process is completed, the process gas is not introduced. However, it is determined that the pressure in the reaction chamber 2 has become equal to or less than a predetermined pressure, and that the above-described differential pressure has become equal to or less than a predetermined value. The valve 4 may be opened.
【００１５】また上記所定の条件は、反応室２内での半
導体ウエハの所定の反応処理が終了し、この後、所定の
時間が経過したこととし、上述の差圧が所定値以下にな
ったこととで、ゲートバルブ４を開くようにしてもよ
い。The predetermined condition is that a predetermined reaction process of the semiconductor wafer in the reaction chamber 2 has been completed, a predetermined time has elapsed thereafter, and the above-mentioned differential pressure has become equal to or less than a predetermined value. Therefore, the gate valve 4 may be opened.
【００１６】あるいは上記所定の条件は、装置の何らか
の構成部材の機械的な動作タイミング、例えばゲートバ
ルブ１８を閉じたこととしてもよい。Alternatively, the predetermined condition may be that the mechanical operation timing of some component of the apparatus, for example, the gate valve 18 is closed.
【００１７】あるいは図示せずとも反応室２又は予備室
３内のロボットの運動、例えば半導体ウエハを反応室２
内の支持構造に載せたことを検知したことであってもよ
い。Alternatively, though not shown, the movement of the robot in the reaction chamber 2 or the preparatory chamber 3, for example, the semiconductor wafer is transferred to the reaction chamber 2
It may be that it is detected that it has been placed on the support structure inside.
【００１８】また、以上の実施の形態では反応室と予備
室とは１づつとしたが、これらはいづれかあるいは両者
ともに複数個宛設けたいわゆる１チャンバ２ロードロッ
クタイプやマルチチャンバータイプにも適用可能であ
る。In the above embodiment, the number of the reaction chamber and the number of the spare chamber are one. However, any one or both of them may be applied to a so-called one-chamber two-load lock type or a multi-chamber type. It is.
【００１９】[0019]
【発明の効果】以上述べたように、本発明の半導体製造
装置によればゲートバルブを開ける度に反応室から予備
室へ、あるいは予備室から反応室へ大きな気流が生じる
ことなく、従ってパーティクルが舞い上がらず、半導体
ウエハの歩留り低下を防止することができる。As described above, according to the semiconductor manufacturing apparatus of the present invention, a large airflow does not occur from the reaction chamber to the preparatory chamber or from the preparatory chamber to the reaction chamber every time the gate valve is opened. As a result, the yield of semiconductor wafers can be prevented from lowering.
【図１】本発明の実施の形態による半導体製造装置の概
略正面図である。FIG. 1 is a schematic front view of a semiconductor manufacturing apparatus according to an embodiment of the present invention.
【図２】同装置の作用を示すタイムチャートであり、Ａ
は同装置における反応室の圧力の変化、Ｂは同装置にお
ける予備室の圧力の変化、Ｃは反応室と予備室の差圧の
時間的変化をＤはゲートバルブの開閉のタイミングを示
すタイムチャートである。FIG. 2 is a time chart showing the operation of the device,
Is a change in the pressure in the reaction chamber in the same apparatus, B is a change in the pressure in the preliminary chamber in the same apparatus, C is a temporal change in the differential pressure between the reaction chamber and the preliminary chamber, and D is a time chart showing the timing of opening and closing the gate valve. It is.
１……半導体製造装置、２……反応室、３……予備室、
４……ゲートバルブ、５、８……排気用真空ポンプ、１
０……制御装置、１１、１２……圧力計。1. Semiconductor manufacturing equipment 2. Reaction chamber 3. Preliminary chamber
4 ... Gate valve, 5, 8 ... Vacuum pump for exhaust, 1
0: Control device, 11, 12: Pressure gauge.
Claims (7)
開閉するゲートバルブとを備え、半導体ウエハを前記予
備室から前記反応室へ搬入するとき及び前記反応室から
前記予備室へ搬出するときに、前記ゲートバルブを開く
ようにした半導体製造装置において、 排気中の前記反応室と前記予備室との圧力差が設定圧力
以下になったことを検知すると、前記ゲートバルブを開
くようにしたことを特徴とする半導体製造装置。A reaction chamber; a spare chamber adjacent to the reaction chamber; and a gate valve for opening and closing the reaction chamber and the spare chamber to open and close the communication between the reaction chamber and the spare chamber. A semiconductor manufacturing apparatus in which the gate valve is opened when carrying in the reaction chamber from the reaction chamber and when carrying out the chamber from the reaction chamber to the preliminary chamber; A semiconductor manufacturing apparatus wherein the gate valve is opened when it is detected that the pressure has become equal to or lower than a set pressure.
開閉するゲートバルブとを備え、半導体ウエハを前記予
備室から前記反応室へ搬入するとき及び前記反応室から
前記予備室へ搬出するときに、前記ゲートバルブを開く
ようにした半導体製造装置において、 所定の条件下で、排気中の前記反応室と前記予備室との
圧力差が設定圧力以下になったことを検知すると、前記
ゲートバルブを開くようにしたことを特徴とする半導体
製造装置。2. A reaction chamber, a preparatory chamber adjacent to the reaction chamber, and a gate valve that opens and closes to open and close the reaction chamber and the preparatory chamber. A semiconductor manufacturing apparatus in which the gate valve is opened when carrying in from the reaction chamber to the reaction chamber and when carrying out from the reaction chamber to the preliminary chamber; The semiconductor manufacturing apparatus according to claim 1, wherein the gate valve is opened when it is detected that the pressure difference between the chamber and the chamber becomes equal to or less than a set pressure.
ウエハが前記予備室に搬入され、該予備室の圧力が所定
の圧力以下になったことであることを特徴とする請求項
２に記載の半導体製造装置。3. The pre-determined condition is that the semiconductor wafer is carried into the pre-chamber from outside, and the pressure in the pre-chamber becomes equal to or lower than a predetermined pressure. Semiconductor manufacturing equipment.
前記予備室に搬入され、所定時間を経過したことである
ことを特徴とする請求項２に記載の半導体製造装置。4. The semiconductor manufacturing apparatus according to claim 2, wherein the predetermined condition is that a predetermined time has passed since the semiconductor wafer was loaded into the preliminary chamber.
半導体ウエハの所定の反応処理が終了して、該反応室の
圧力が所定の圧力以下になったことであることを特徴と
する請求項２に記載の半導体製造装置。5. The predetermined condition is that a predetermined reaction process of the semiconductor wafer in the reaction chamber is completed and a pressure of the reaction chamber becomes equal to or lower than a predetermined pressure. The semiconductor manufacturing apparatus according to claim 2.
半導体ウエハの所定の反応処理が終了し、この後所定の
時間が経過したことであることを特徴とする請求項２に
記載の半導体製造装置。6. The method according to claim 2, wherein the predetermined condition is that a predetermined reaction process of the semiconductor wafer in the reaction chamber has been completed and a predetermined time has elapsed since then. Semiconductor manufacturing equipment.
械的な動作タイミングであることを特徴とする請求項２
に記載の半導体製造装置。7. The apparatus according to claim 2, wherein the predetermined condition is a mechanical operation timing of a component of the apparatus.
4. The semiconductor manufacturing apparatus according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32247396A JPH10163291A (en) | 1996-12-03 | 1996-12-03 | Semiconductor device manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32247396A JPH10163291A (en) | 1996-12-03 | 1996-12-03 | Semiconductor device manufacturing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10163291A true JPH10163291A (en) | 1998-06-19 |
Family
ID=18144038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32247396A Pending JPH10163291A (en) | 1996-12-03 | 1996-12-03 | Semiconductor device manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10163291A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100676197B1 (en) * | 2000-09-26 | 2007-01-30 | 삼성전자주식회사 | Air Flow Control Apparatus for Load Lock Chamber |
| KR20170088980A (en) * | 2014-12-01 | 2017-08-02 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | System and method of opening a load lock door valve at a desired pressure after venting |
-
1996
- 1996-12-03 JP JP32247396A patent/JPH10163291A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100676197B1 (en) * | 2000-09-26 | 2007-01-30 | 삼성전자주식회사 | Air Flow Control Apparatus for Load Lock Chamber |
| KR20170088980A (en) * | 2014-12-01 | 2017-08-02 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | System and method of opening a load lock door valve at a desired pressure after venting |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3486821B2 (en) | Processing apparatus and method of transporting object to be processed in processing apparatus | |
| US20160169766A1 (en) | Leakage determining method, substrate processing apparatus and storage medium | |
| JP2006128341A (en) | Method for operating substrate treatment equipment, method for controlling it, substrate treatment equipment and program controlling the same | |
| JP5545795B2 (en) | Substrate processing apparatus and semiconductor manufacturing apparatus management method | |
| TWI775144B (en) | Substrate processing apparatus, manufacturing method and program of semiconductor device | |
| US20070175395A1 (en) | Semiconductor device manufacturing equipment including a vacuum apparatus and a method of operating the same | |
| JPH10163291A (en) | Semiconductor device manufacturing apparatus | |
| JP3153323B2 (en) | Apparatus and method for restoring normal pressure in an airtight chamber | |
| JP2004281832A (en) | Semiconductor manufacturing apparatus and method of carrying semiconductor substrate therein | |
| CN109950176B (en) | Substrate processing apparatus, method for manufacturing semiconductor device, and recording medium | |
| JPS5812342B2 (en) | Continuous dry etching method | |
| JPH02312223A (en) | Plasma processing and plasma processor | |
| JP2000306838A (en) | Treatment method and apparatus for semiconductor substrate | |
| JP2735231B2 (en) | Semiconductor manufacturing equipment | |
| JP2006086186A (en) | Substrate processing apparatus | |
| JP2657254B2 (en) | Processing apparatus and its exhaust method | |
| JP7379042B2 (en) | Vacuum transfer device and vacuum transfer device control method | |
| JPH09143674A (en) | Film forming device and using method therefor | |
| WO2021049368A1 (en) | Substrate processing device and method for conctrolling substrate processing device | |
| US20220277974A1 (en) | Input/output (io) handling during update process for manufacturing system controller | |
| JPH10199817A (en) | Film-forming apparatus | |
| JP3844999B2 (en) | Substrate processing method | |
| JPH085545Y2 (en) | Semiconductor manufacturing equipment | |
| JP3153138B2 (en) | Method for manufacturing semiconductor device | |
| JPH0795529B2 (en) | Vertical diffusion CVD system |