JPH10135497A - Solar cell element and solar cell module - Google Patents
Solar cell element and solar cell moduleInfo
- Publication number
- JPH10135497A JPH10135497A JP8290707A JP29070796A JPH10135497A JP H10135497 A JPH10135497 A JP H10135497A JP 8290707 A JP8290707 A JP 8290707A JP 29070796 A JP29070796 A JP 29070796A JP H10135497 A JPH10135497 A JP H10135497A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- light
- film
- conductive film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光入射により光起
電力を発生する太陽電池素子、及び複数個の太陽電池素
子から構成される太陽電池モジュールに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell element which generates photovoltaic power by light incidence, and a solar cell module comprising a plurality of solar cell elements.
【０００２】[0002]
【従来の技術】太陽光を直接電気に変換できる太陽電池
素子は、従来から電卓や腕時計等の民生機器用の電源と
して商品化されており、近年においてはビルや個人住宅
等の電源としても使用されている。2. Description of the Related Art Solar cell elements capable of directly converting sunlight into electricity have been commercialized as power supplies for consumer appliances such as calculators and watches, and have recently been used as power supplies for buildings and private houses. Have been.
【０００３】斯かる従来の太陽電池素子について、図８
に示した素子構造断面図を参照して説明する。FIG. 8 shows such a conventional solar cell element.
This will be described with reference to the element structure sectional view shown in FIG.
【０００４】同図に於いて、１０１は単結晶シリコン或
いは多結晶シリコン等の結晶系半導体からなるｐ型の基
板であり、該基板１０１の受光面には、ＰＯＣｌ3ガス
を用いた約９００℃の温度での熱拡散によりＰ（リン）
が拡散されてなるｎ型層１０２が形成されている。そし
て、該ｎ型層１０２上にはＴｉＯ2からなる反射防止膜
１０３及び櫛型状の受光面電極１０４が積層されてい
る。In FIG. 1, reference numeral 101 denotes a p-type substrate made of a crystalline semiconductor such as single-crystal silicon or polycrystalline silicon. The light-receiving surface of the substrate 101 is approximately 900 ° C. using POCl 3 gas. P (phosphorus) by thermal diffusion at the temperature of
Is diffused to form an n-type layer 102. On the n-type layer 102, an anti-reflection film 103 made of TiO 2 and a comb-shaped light receiving surface electrode 104 are laminated.
【０００５】また、上記基板１０１の背面には、ｐ型の
不純物であるＡｌが高濃度にドープされたｐ型の不純物
層１０５、及びＡｌからなる背面電極１０６が設けられ
ている。On the back surface of the substrate 101, there are provided a p-type impurity layer 105 doped with a high concentration of p-type impurity Al and a back electrode 106 made of Al.
【０００６】[0006]
【発明が解決しようとする課題】斯かる従来の太陽電池
素子に於いて、上記不純物層１０５を形成するにあたっ
ては、まず前記基板１０１の背面に背面電極１０６とな
るＡｌ膜を形成し、斯かる後に約７００℃の温度でＡｌ
膜中のＡｌを基板１０１の背面に熱拡散させて形成して
いた。然し乍ら、ＡｌとＳｉとの熱膨張係数が異なるた
めに、この工程中で結晶系シリコン基板１０１に反りが
生じ易く、この反りのためにその後の工程で基板１０１
の割れが発生し、歩留が低下する、という課題があっ
た。In such a conventional solar cell device, when forming the impurity layer 105, first, an Al film to be a back electrode 106 is formed on the back surface of the substrate 101. Later, at a temperature of about 700 ° C., Al
The film was formed by thermally diffusing Al in the film to the back surface of the substrate 101. However, since the thermal expansion coefficients of Al and Si are different, the crystalline silicon substrate 101 is likely to be warped during this step.
There is a problem that cracks occur and the yield decreases.
【０００７】特に、近年においては材料費の節減のため
に基板の薄膜化が検討されており、上述した基板の反り
の問題は、基板の薄膜化が進む程顕著になっていた。In particular, in recent years, thinning of the substrate has been studied in order to reduce the material cost, and the problem of the warpage of the substrate described above has become more remarkable as the thinning of the substrate progresses.
【０００８】[0008]
【課題を解決するための手段】斯かる課題を解決するた
めに、本発明の太陽電池素子は、結晶系半導体を備えて
なる太陽電池素子であって、前記結晶系半導体の背面
に、透光性導電膜を備えたことを特徴としており、前記
透光性導電膜上に、集電極を備えたことを特徴としてい
る。In order to solve the above problems, a solar cell element according to the present invention is a solar cell element comprising a crystalline semiconductor, wherein a light transmitting light is provided on the back surface of the crystalline semiconductor. And a collector electrode provided on the translucent conductive film.
【０００９】また、前記結晶系半導体が一導電型を有す
ると共に、該結晶系半導体と前記背面電極との間に、前
記結晶系半導体と同導電型の不純物が高濃度にドープさ
れた不純物層を備えたことを特徴としており、前記不純
物層が、非晶質半導体からなることを特徴としている。Further, the crystalline semiconductor has one conductivity type, and an impurity layer doped with the same conductivity type impurity as the crystalline semiconductor at a high concentration is provided between the crystalline semiconductor and the back electrode. And the impurity layer is made of an amorphous semiconductor.
【００１０】加えて、前記透光性導電膜の屈折率（ｎ）
と膜厚（ｄ）との積（ｎｄ）が、４２００〜５４００Å
の範囲にあることを特徴としている。In addition, the refractive index (n) of the translucent conductive film
(Nd) of thickness and thickness (d) is 4200 to 5400 °
In the range.
【００１１】さらに、本発明太陽電池モジュールは、複
数個の太陽電池素子が、透光性部材と背面部材との間に
挟持されてなる太陽電池モジュールであって、前記太陽
電池素子の背面電極が透光性を有することを特徴として
いる。Further, the solar cell module according to the present invention is a solar cell module in which a plurality of solar cell elements are sandwiched between a translucent member and a back member, wherein the back electrode of the solar cell element is provided. It is characterized by having translucency.
【００１２】ここで、本発明にあっては、前記背面電極
が、透光性導電膜と、集電極と、からなることを特徴と
おり、また、前記背面部材が透光性を有することを特徴
としている。Here, the present invention is characterized in that the back electrode comprises a light-transmitting conductive film and a collector electrode, and that the back member has a light-transmitting property. And
【００１３】加えて、前記透光性導電膜の屈折率（ｎ）
と膜厚（ｄ）との積（ｎｄ）が、１４００〜２４００Å
の範囲にあることを特徴としている。In addition, the refractive index (n) of the translucent conductive film
(Nd) of the thickness and the film thickness (d) is 1400-2400 °
In the range.
【００１４】或いは、本発明太陽電池モジュールは、前
記太陽電池素子と前記背面部材との間に、反射膜を備え
たことを特徴としており、前記太陽電池素子と、前記反
射膜との間に透光性充填層を備えたことを特徴としてお
り、加えて前記反射膜が、白色の樹脂からなることを特
徴としている。Alternatively, the solar cell module of the present invention is characterized in that a reflection film is provided between the solar cell element and the back member, and a transparent film is provided between the solar cell element and the reflection film. A light-filled layer is provided, and in addition, the reflection film is made of a white resin.
【００１５】もしくは、前記背面部材が反射性を有する
材料からなることを特徴としている。Alternatively, the back member is made of a reflective material.
【００１６】さらには前記透光性導電材の屈折率（ｎ）
と膜厚（ｄ）との積（ｎｄ）が、２６００〜３６００Å
の範囲にあることを特徴としている。Further, the refractive index (n) of the translucent conductive material
(Nd) of the thickness and the film thickness (d) is 2600 to 3600 °
In the range.
【００１７】[0017]
【実施の形態】図１は本発明の実施形態に係わる太陽電
池素子の素子構造断面図である。図中１は単結晶シリコ
ンや多結晶シリコン等の結晶系半導体からなるｐ型の基
板であり、該基板１の受光面にはｎ型層２が形成されて
いる。 ３は該ｎ型層２上に形成されたＴｉＯX、ＳｉＯ
X、ＳｉＮX、ＩＴＯ等からなる反射防止膜、４はＡｇか
らなる櫛型状の受光面電極である。FIG. 1 is a sectional view showing the structure of a solar cell according to an embodiment of the present invention. In the figure, reference numeral 1 denotes a p-type substrate made of a crystalline semiconductor such as single-crystal silicon or polycrystalline silicon, and an n-type layer 2 is formed on a light-receiving surface of the substrate 1. Reference numeral 3 denotes TiO x , SiO formed on the n-type layer 2.
X, SiN X, the anti-reflection film made of ITO or the like, 4 is a comb-shaped light-receiving surface electrode formed of Ag.
【００１８】さらに、前記基板１の背面には前記基板１
と同導電型のｐ型不純物が高濃度にドープされた不純物
層５が設けられ、そしてこの不純物層５上にＩＴＯ，Ｓ
ｎＯ 2或いはＺｎＯX等の透明導電材からなる透明導電膜
６が形成されている。Further, on the back of the substrate 1, the substrate 1
Highly doped p-type impurity of the same conductivity type as
A layer 5 is provided, and ITO, S
nO TwoOr ZnOXTransparent conductive film made of transparent conductive material such as
6 are formed.
【００１９】斯かる構成の本発明太陽電池素子によれ
ば、上記透明導電膜６をスパッタ法、蒸着法或いはスク
リーン印刷法等の方法を用いて約２００℃以下の温度で
形成することができるので、従来のような基板１の反り
の発生を抑制でき、歩留の向上した太陽電池素子を得る
ことができる。According to the solar cell element of the present invention having such a configuration, the transparent conductive film 6 can be formed at a temperature of about 200 ° C. or less by using a method such as a sputtering method, a vapor deposition method, or a screen printing method. In addition, it is possible to suppress the occurrence of warpage of the substrate 1 as in the related art, and to obtain a solar cell element with improved yield.
【００２０】尚、上記透明導電膜６はそのシート抵抗が
高いので、光照射により上記単結晶シリコン基板１内で
発生した光生成キャリアを外部に有効に取り出すために
は、透明導電膜６上にＡｇからなる櫛型状の集電極７を
設けることが好ましい。Since the transparent conductive film 6 has a high sheet resistance, in order to effectively take out photogenerated carriers generated in the single-crystal silicon substrate 1 by light irradiation to the outside, the transparent conductive film 6 must be formed on the transparent conductive film 6. It is preferable to provide a comb-shaped collector electrode 7 made of Ag.
【００２１】以下に、斯かる本発明の太陽電池素子を製
造する工程を図面を参照して説明する。Hereinafter, steps for manufacturing the solar cell element of the present invention will be described with reference to the drawings.
【００２２】図２は、本実施形態の太陽電池素子を製造
する工程を説明するための工程別素子構造図であり、図
１に示した素子構造図と同一の部分には同一の符号を付
している。FIG. 2 is an element structure diagram for each step for explaining a process for manufacturing the solar cell element of the present embodiment. The same parts as those in the element structure diagram shown in FIG. doing.
【００２３】まず、同図（Ａ）に示す工程に於いては、
抵抗率が１Ω・ｃｍで厚さが約３５０μｍのｐ型単結晶
シリコン基板１の受光面の深さ約１μｍ迄の領域に、Ｐ
ＯＣｌ3ガスを用いて約９００℃の温度でＰ（リン）を
熱拡散してｎ型層２を形成する。First, in the process shown in FIG.
In the region of the light receiving surface of the p-type single crystal silicon substrate 1 having a resistivity of 1 Ω · cm and a thickness of about 350 μm up to a depth of about 1 μm, P
P (phosphorus) is thermally diffused at a temperature of about 900 ° C. using an OCl 3 gas to form an n-type layer 2.
【００２４】次いで、同図（Ｂ）に示す工程に於いて
は、前記ｎ型層２上にスパッタ法を用いてＴｉＯXから
なる反射防止膜３を形成し、該反射防止膜上にＡｇペー
ストを用いて櫛型状の受光面電極４をスクリーン印刷法
により形成する。また、基板１の背面にＡｌペーストを
用いてＡｌ膜６’をスクリーン印刷法により形成する。
尚、上記反射防止膜３としてはＳｉＯX，ＳｉＮX，或い
はＩＴＯを用いてもよい。[0024] Then, the In the process shown in FIG. (B), by sputtering on the n-type layer 2 to form an antireflection film 3 made of TiO X, Ag paste onto the anti Is used to form a comb-shaped light receiving surface electrode 4 by a screen printing method. Also, an Al film 6 'is formed on the back surface of the substrate 1 by using an Al paste by a screen printing method.
Incidentally, SiO X as the antireflective film 3, SiN X, or may be used ITO.
【００２５】そして、同図（Ｃ）に示す工程に於いて
は、Ａｌ膜６’が形成された上記基板１を約７００℃の
温度で加熱し、上記受光面電極４を焼成すると共にその
一部に前記反射防止膜３を貫通させ、上記ｎ型層２と接
触させる。加えて、前記Ａｌ膜６’からＡｌを基板１に
熱拡散させ、Ａｌが高濃度にドープされたｐ型の不純物
層５を形成する。尚、この工程中でＳｉとＡｌとの熱膨
張係数の違いにより基板１に反りが発生することとな
る。Then, in the step shown in FIG. 2C, the substrate 1 on which the Al film 6 'is formed is heated at a temperature of about 700.degree. The antireflection film 3 is made to penetrate the portion and is brought into contact with the n-type layer 2. In addition, Al is thermally diffused from the Al film 6 ′ into the substrate 1 to form a p-type impurity layer 5 doped with Al at a high concentration. In this process, the substrate 1 is warped due to a difference in thermal expansion coefficient between Si and Al.
【００２６】そして、同図（Ｄ）に示す工程に於いて
は、上記Ａｌ膜６’を例えば塩酸等のエッチング溶液で
除去する。斯かる如くＡｌ膜６’を除去することで上述
した基板１の反りが解消される。Then, in the step shown in FIG. 3D, the Al film 6 'is removed with an etching solution such as hydrochloric acid. By thus removing the Al film 6 ', the above-described warpage of the substrate 1 is eliminated.
【００２７】さらに、同図（Ｅ）に示す工程に於いて
は、上記不純物層５上に、ＩＴＯからなる透光性導電膜
６及びＡｇからなる櫛型状の集電極７を、夫々スパッタ
法及びスクリーン印刷法を用いて形成する。In the step shown in FIG. 2E, a light-transmitting conductive film 6 made of ITO and a comb-shaped collector electrode 7 made of Ag are formed on the impurity layer 5 by sputtering, respectively. And a screen printing method.
【００２８】以上の工程により本実施形態の太陽電池素
子が製造される。The solar cell element of the present embodiment is manufactured through the above steps.
【００２９】表１に、種々の膜厚の単結晶シリコン基板
を用いて製造した本発明太陽電池素子と、従来構造の太
陽電池素子との歩留を測定した結果を示す。Table 1 shows the results of measuring the yield of the solar cell device of the present invention manufactured using single-crystal silicon substrates having various thicknesses and the solar cell device of the conventional structure.
【００３０】[0030]
【表１】 [Table 1]
【００３１】表１に示す如く、本発明によれば基板の膜
厚を１００μｍまで薄膜化した場合であっても約９８％
と、従来の太陽電池素子よりも高い歩留を有しており、
基板の薄膜化が可能であることがわかる。As shown in Table 1, according to the present invention, even when the thickness of the substrate is reduced to 100 μm, about 98%
And has a higher yield than conventional solar cell elements,
It can be seen that the substrate can be made thinner.
【００３２】尚、本実施形態に於いては、上記不純物層
５をＡｌに熱拡散により形成したが、これに限らずｐ型
の不純物が高濃度にドープされた非晶質半導体を用いて
も良い。In the present embodiment, the impurity layer 5 is formed by thermal diffusion into Al. However, the present invention is not limited to this, and an amorphous semiconductor doped with p-type impurities at a high concentration may be used. good.
【００３３】図３は、斯かる非晶質半導体を不純物層５
に用いた、本発明の他の実施形態に係わる太陽電池素子
の素子構造断面図である。尚、図２に示した太陽電池素
子と同一の部分には同一の符号を付している。FIG. 3 shows such an amorphous semiconductor as an impurity layer 5.
FIG. 6 is a cross-sectional view of the element structure of a solar cell element according to another embodiment of the present invention, which is used for FIG. The same parts as those of the solar cell element shown in FIG. 2 are denoted by the same reference numerals.
【００３４】同図に示す如く、本実施形態によれば結晶
系シリコン基板１の背面に、ｐ型の不純物であるＢが高
濃度にドープされた非晶質半導体からなるｐ型の不純物
層５’が形成されている。As shown in the figure, according to the present embodiment, a p-type impurity layer 5 made of an amorphous semiconductor doped with a high concentration of B, which is a p-type impurity, is provided on the back surface of the crystalline silicon substrate 1. 'Has been formed.
【００３５】斯かる非晶質半導体からなる不純物層５’
はプラズマＣＶＤ法を用いて約２００℃以下の低温で形
成することができるので、基板１に反りが生じることが
ない。加えて、前述した実施形態の如く、不純物層の形
成にあたって一端Ａｌ膜を形成し、この膜中のＡｌを熱
拡散させた後に該Ａｌ膜をエッチングにより除去する、
という複雑な工程が不要となるので、生産性の向上も図
ることができる。The impurity layer 5 'made of such an amorphous semiconductor
Can be formed at a low temperature of about 200 ° C. or less using a plasma CVD method, so that the substrate 1 does not warp. In addition, as in the above-described embodiment, an Al film is formed at one end in forming the impurity layer, and after the Al in the film is thermally diffused, the Al film is removed by etching.
Since such a complicated process is not required, productivity can be improved.
【００３６】尚、図３に示した太陽電池素子に於いて、
結晶系シリコン基板１と不純物層５’との間に、不純物
を添加せずに形成した、膜厚１００Å程度の実質的に真
性の非晶質半導体層を設けてもよい。斯かる構成とすれ
ば、結晶系シリコン基板１と、非晶質半導体からなる不
純物層５’とが接する界面の特性を向上することがで
き、光電変換効率の向上を図ることも可能となる。Incidentally, in the solar cell element shown in FIG.
Between the crystalline silicon substrate 1 and the impurity layer 5 ′, a substantially intrinsic amorphous semiconductor layer having a thickness of about 100 ° formed without adding impurities may be provided. With such a configuration, it is possible to improve the characteristics of the interface at which the crystalline silicon substrate 1 and the impurity layer 5 ′ made of an amorphous semiconductor are in contact, and it is also possible to improve the photoelectric conversion efficiency.
【００３７】また、基板１の受光面に配される反射防止
膜３及び受光面電極４の配置は、本実施形態の如く受光
面電極４を基板１の受光面に配置し、これを反射防止膜
３で覆う形態としても構わない。The arrangement of the anti-reflection film 3 and the light-receiving surface electrode 4 disposed on the light-receiving surface of the substrate 1 is such that the light-receiving surface electrode 4 is disposed on the light-receiving surface of the substrate 1 as in this embodiment. The form covered with the film 3 may be sufficient.
【００３８】図４は、本発明太陽電池素子のさらに別の
実施形態を示す素子構造断面図である。本実施形態に於
いては、ｎ型の結晶系シリコン基板１１の受光面に、膜
厚約１００Åの真性の非晶質シリコンからなるｉ型層１
２及び膜厚約１００Åのｐ型非晶質シリコンからなるｐ
型層１３がこの順に積層されている。そして、該ｐ型層
１３上には膜厚約７００ÅのＩＴＯからなる透光性導電
膜１４及びＡｇからなる櫛型状の受光面電極１５が形成
される。FIG. 4 is a sectional view showing the structure of a solar cell according to still another embodiment of the present invention. In this embodiment, the i-type layer 1 made of intrinsic amorphous silicon having a thickness of about 100 ° is formed on the light receiving surface of the n-type crystalline silicon substrate 11.
2 and a p-type amorphous silicon
The mold layers 13 are stacked in this order. Then, on the p-type layer 13, a translucent conductive film 14 made of ITO having a thickness of about 700 ° and a comb-shaped light receiving surface electrode 15 made of Ag are formed.
【００３９】また、前記基板１１の背面には、膜厚約１
００Åの真性の非晶質シリコンからなるｉ型層１５及び
膜厚約１００Åの高濃度にドープされたｎ型非晶質シリ
コンからなる不純物層１６がこの順に積層されている。
そして、該不純物層１６上にはＩＴＯからなる透光性電
極膜１７及びＡｇからなる櫛型状の集電極１８が形成さ
れている。On the back surface of the substrate 11, a film thickness of about 1
An i-type layer 15 made of intrinsic amorphous silicon of 00 ° and an impurity layer 16 made of highly doped n-type amorphous silicon having a thickness of about 100 ° are stacked in this order.
On the impurity layer 16, a translucent electrode film 17 made of ITO and a comb-shaped collector electrode 18 made of Ag are formed.
【００４０】斯かる構造の太陽電池素子によれば、結晶
系シリコン基板以外の各層の形成を、プラズマＣＶＤ
法、スパッタ法、蒸着法、或いはスクリーン印刷法等の
方法を用いて全て約２００℃以下の温度で行うことがで
きるので、基板の反りの発生を防止でき、且つ製造コス
トの低減も図ることができる。According to the solar cell element having such a structure, each layer other than the crystalline silicon substrate is formed by plasma CVD.
Can be performed at a temperature of about 200 ° C. or less by using a method such as a sputtering method, a sputtering method, an evaporation method, or a screen printing method, so that occurrence of warpage of the substrate can be prevented and manufacturing cost can be reduced. it can.
【００４１】ところで、上述の各実施形態に示した本発
明太陽電池素子にあっては、結晶系シリコン基板の背面
に備えられる透明導電膜と櫛型状の集電極とから、背面
電極が構成されることとなる。従って、この背面電極は
透光性を有しており、このため結晶系半導体基板を透過
して背面電極に達した光は、その殆どが該背面電極を透
過して外部に失われてしまう。Incidentally, in the solar cell element of the present invention shown in each of the above embodiments, the back electrode is constituted by the transparent conductive film provided on the back surface of the crystalline silicon substrate and the comb-shaped collector electrode. The Rukoto. Therefore, the back electrode has a light-transmitting property, so that most of the light transmitted through the crystalline semiconductor substrate and reaching the back electrode is transmitted to the back electrode and lost to the outside.
【００４２】そこで、本発明にあっては、透光性導電膜
の屈折率（ｎ）と膜厚（ｄ）の積ｎｄを約４５００〜５
０００Åの範囲とすることで、結晶系シリコン基板を透
過した光を、該基板と透光性導電膜との接触界面で反射
させるようにした。即ち、この接触界面での光の反射は
結晶系シリコン基板と透光性導電膜との屈折率の差によ
り生じるため、透光性導電膜の屈折率と膜厚の積ｎｄを
上記範囲とすることで、接触界面での光の反射を最大と
でき、光電変換効率の向上を図ることができる。Therefore, in the present invention, the product nd of the refractive index (n) and the film thickness (d) of the translucent conductive film is set to about 4500 to 5
By setting the range to 000 °, light transmitted through the crystalline silicon substrate is reflected at a contact interface between the substrate and the light-transmitting conductive film. That is, since the reflection of light at the contact interface is caused by a difference in the refractive index between the crystalline silicon substrate and the light-transmitting conductive film, the product nd of the refractive index and the film thickness of the light-transmitting conductive film is set in the above range. Thereby, the reflection of light at the contact interface can be maximized, and the photoelectric conversion efficiency can be improved.
【００４３】次に、本発明太陽電池素子を用いた太陽電
池モジュールについて図面を参照して説明する。Next, a solar cell module using the solar cell element of the present invention will be described with reference to the drawings.
【００４４】図５は、本発明太陽電池モジュ−ルの実施
形態を示すモジュール構造断面図であり、図中２１…
は、透光性を有する背面電極を備えた複数個の太陽電池
素子であり、例えば前述した本発明に係わる太陽電池素
子を用いることができる。FIG. 5 is a sectional view of a module structure showing an embodiment of the solar cell module of the present invention.
Is a plurality of solar cell elements provided with a light-transmitting back electrode. For example, the above-described solar cell element according to the present invention can be used.
【００４５】これら太陽電池素子２１…は接続体２２…
により互いに電気的に直列接続されている。また、２３
及び２４は、いずれも透光性を有するガラス、プラスチ
ック等からなる透光性部材及び背面部材であり、上記太
陽電池素子２１…は透光性樹脂２５を介してこれら透光
性部材２３及び背面部材２４の間に挟持され、そしてア
ルミニウムからなる枠部材２６によって一体化されるこ
とで本実施形態の太陽電池モジュール２０が構成され
る。These solar cell elements 21 are connected to connection bodies 22.
Are electrically connected to each other in series. Also, 23
And 24 are a light-transmitting member and a back member made of glass, plastic, or the like having a light-transmitting property. The solar cell elements 21... The solar cell module 20 of the present embodiment is configured by being sandwiched between the members 24 and integrated by a frame member 26 made of aluminum.
【００４６】図６は、斯かる本発明太陽電池モジュール
を複数個立設してなる太陽光発電システムの側面図であ
る。FIG. 6 is a side view of a solar power generation system in which a plurality of such solar cell modules of the present invention are erected.
【００４７】同図に示すように、複数の太陽電池モジュ
ール２０…は、支持体３０…により、夫々における発電
量が最大となるようにいずれも南向きに所定の角度傾け
て、立設配置されている。As shown in the figure, the plurality of solar cell modules 20 are vertically erected by the support 30 so as to be inclined at a predetermined angle to the south so that the amount of power generation in each of them becomes maximum. ing.
【００４８】斯かる太陽光発電システムに於いては、太
陽電池素子の背面電極が透光性を有しており、且つ背面
部材も透光性を有しているので、モジュール２０…の背
面側から入射する光も発電に利用することができる。In such a photovoltaic power generation system, the back electrode of the solar cell element has translucency, and the back member also has translucency. Can also be used for power generation.
【００４９】例えば、図中Ａで示す矢印の方向に入射し
た光は、太陽電池モジュール２０の表面で矢印Ｂに示す
方向に反射され、そして隣接する一方の太陽電池モジュ
ール２０に背面側から入射し、該モジュール２０で発電
に寄与することとなる。For example, light incident in the direction of the arrow indicated by A in the figure is reflected on the surface of the solar cell module 20 in the direction indicated by the arrow B, and is incident on one adjacent solar cell module 20 from the back side. The module 20 contributes to power generation.
【００５０】従って、本発明太陽電池モジュールを用い
た太陽電池システムにあっては、従来は利用できなかっ
た背面側から入射する光も発電に利用でき、システムの
効率が向上する。Therefore, in the solar cell system using the solar cell module of the present invention, light incident from the back side, which has not been used conventionally, can also be used for power generation, and the efficiency of the system is improved.
【００５１】尚、本実施形態にあっては、太陽電池素子
の背面電極となる透光性導電膜を反射防止膜としても用
いることができる。この時、透光性導電膜の屈折率
（ｎ）と膜厚（ｄ）との積ｎｄを１４００〜２４００Å
とすることで、結晶系半導体からなる太陽電池素子が最
も高い感度を有する約６００〜７００ｎｍの光に対する
反射率を最小とすることが可能となり、太陽電池素子自
体の光電変換効率を向上させることができる。In this embodiment, the light-transmitting conductive film serving as the back electrode of the solar cell element can be used as the anti-reflection film. At this time, the product nd of the refractive index (n) and the film thickness (d) of the light transmitting conductive film is set to 1400 to 2400 °.
By doing so, it is possible to minimize the reflectance of the solar cell element made of a crystalline semiconductor with respect to light of about 600 to 700 nm having the highest sensitivity, and to improve the photoelectric conversion efficiency of the solar cell element itself. it can.
【００５２】図７は、本発明の他の実施形態に係わる太
陽電池モジュールのモジュール構造断面図であり、図６
に示した太陽電池モジュールと同一の部分には同一の符
号を付している。FIG. 7 is a sectional view showing the module structure of a solar cell module according to another embodiment of the present invention.
The same parts as those of the solar cell module shown in FIG.
【００５３】同図において、透光性を有する背面電極を
備えた複数個の太陽電池素子２１…は、夫々接続体２２
…により電気的に直列接続されている。これら太陽電池
素子２１…は前述の実施例と同様、透光性樹脂２５を介
して透光性部材２３及び背面部材２４により挟持され、
そして枠部材２６により一体化されている。In the figure, a plurality of solar cell elements 21 having a translucent back electrode are connected to a connection body 22 respectively.
Are electrically connected in series. These solar cell elements 21 are sandwiched by a light-transmitting member 23 and a back member 24 via a light-transmitting resin 25, as in the above-described embodiment.
And it is integrated by the frame member 26.
【００５４】ここで、本実施形態の太陽電池モジュール
にあっては、上記太陽電池素子２１…と背面部材２４と
の間に、白色のＰＶＦ（ポリビニルフロライド）、ＰＥ
Ｔ（ポリエチレンテレフタレート）、ＰＥＮ（ポリエチ
レンナフタレート）等の樹脂からなる反射膜２７が設け
てある。従って、本実施形態にあっては太陽電池素子２
１…を一端透過した光を反射膜２７により反射し、再度
太陽電池素子２１…に背面側から入射させて光電変換に
利用することが可能となる。Here, in the solar cell module of this embodiment, white PVF (polyvinyl fluoride) or PE is provided between the solar cell elements 21 and the back member 24.
A reflection film 27 made of a resin such as T (polyethylene terephthalate) or PEN (polyethylene naphthalate) is provided. Therefore, in the present embodiment, the solar cell element 2
Are reflected by the reflective film 27, and are again incident on the solar cell elements 21 from the back side to be used for photoelectric conversion.
【００５５】この時、太陽電池素子２１…に背面側から
入射する光は一端太陽電池素子２１…を透過した光なの
で、約１０００ｎｍ以上の長波長領域の成分が多い。従
って、太陽電池素子２１の背面電極を構成する透光性導
電膜は、この波長での反射率が最小となるべく設定する
ことが必要であり、透光性導電膜の屈折率（ｎ）と膜厚
（ｄ）との積ｎｄを、２６００〜３６００Åの範囲とす
ることが好ましい。At this time, the light incident on the solar cell elements 21 from the back side is light that has once passed through the solar cell elements 21 and therefore has many components in the long wavelength region of about 1000 nm or more. Therefore, the translucent conductive film constituting the back electrode of the solar cell element 21 needs to be set so that the reflectance at this wavelength is minimized, and the refractive index (n) of the translucent conductive film and the film The product nd with the thickness (d) is preferably in the range of 2600 to 3600 °.
【００５６】さらに、上記反射膜２７は、透光性充填層
２５を介して背面部材２４側に設けることが好ましい。
斯かる如く構成することで、太陽電池素子２１…間に入
射した光も光電変換に利用することが可能となり、一層
の光電変換効率の向上を図ることができる。Further, it is preferable that the reflection film 27 is provided on the back member 24 via the translucent filling layer 25.
With such a configuration, light incident between the solar cell elements 21 can also be used for photoelectric conversion, and the photoelectric conversion efficiency can be further improved.
【００５７】尚、上記反射膜２７としてはＡｇ、Ａｌ等
の金属を用いても良いが、モジュール化の工程中で太陽
電池素子２１…と背面部材２４との間に挟持されて圧着
されることから、太陽電池素子２１…間での短絡を防止
するために、本実施形態の如く樹脂等の絶縁性を有する
ものから構成することが好ましい。The reflective film 27 may be made of a metal such as Ag or Al. However, the reflective film 27 is sandwiched and pressed between the solar cell elements 21 and the back member 24 during the module forming process. Therefore, in order to prevent a short circuit between the solar cell elements 21..., It is preferable that the solar cell elements 21 be made of an insulating material such as resin as in the present embodiment.
【００５８】また、本実施形態に於いては太陽電池素子
２１…の背面側に反射膜２７を設けることから、背面部
材２４は必ずしも透光性を有する必要はない。In the present embodiment, since the reflection film 27 is provided on the back surface side of the solar cell elements 21..., The back member 24 does not necessarily need to have translucency.
【００５９】或いは、背面部材２４自体を白色のＰＶ
Ｆ、ＰＥＴ、ＰＥＮ等の樹脂、或いはＡｇ，Ａｌ等の金
属のような反射性を有する材料から構成することで、上
記反射膜２７を備えずとも同様の効果を有することは言
うまでもない。Alternatively, the back member 24 itself may be made of white PV.
It is needless to say that the same effect can be obtained without the reflective film 27 by using a reflective material such as a resin such as F, PET, or PEN, or a metal such as Ag or Al.
【００６０】さらに、本発明太陽電池モジュールにおい
て使用する太陽電池素子は透光性を有する背面電極を備
えたものであれば良く、結晶系半導体以外にアモルファ
スシリコンに代表される非晶質半導体や、ＧａＡｓ，Ｉ
ｎＰなどの化合物半導体を用いたものであっても良い。Further, the solar cell element used in the solar cell module of the present invention only needs to have a light-transmitting back electrode, and may use an amorphous semiconductor typified by amorphous silicon other than a crystalline semiconductor, GaAs, I
A device using a compound semiconductor such as nP may be used.
【００６１】[0061]
【発明の効果】以上詳述した如く、本発明太陽電池素子
によれば、結晶系半導体基板を備えて成る太陽電池素子
の背面に透光性導電膜を備えたので、従来のように基板
の反りが発生することがなく歩留が向上する。As described above in detail, according to the solar cell element of the present invention, since the light-transmitting conductive film is provided on the back surface of the solar cell element provided with the crystalline semiconductor substrate, the conventional solar cell element has The yield is improved without warpage.
【００６２】また、本発明に係わる太陽電池素子のよう
に、透光性を有する背面電極を備えた太陽電池素子を用
いた本発明太陽電池モジュールによれば、従来は利用で
きなかったモジュール表面での反射光の利用が可能な太
陽光発電システムを構築でき、また一端太陽電池素子を
透過した光をも利用できるようになる。Further, according to the solar cell module of the present invention using a solar cell element having a translucent back electrode, such as the solar cell element according to the present invention, the surface of the module which could not be used conventionally is obtained. A solar power generation system that can use the reflected light of the solar cell element can be constructed, and the light that has passed through the solar cell element at one end can also be used.
【図１】本発明の実施形態に係わる太陽電池素子の素子
構造断面図である。FIG. 1 is a cross-sectional view of an element structure of a solar cell element according to an embodiment of the present invention.
【図２】本発明太陽電池素子の製造工程を説明するため
の、工程別素子構造図である。FIG. 2 is an element structure diagram for each step, for explaining a manufacturing step of the solar cell element of the present invention.
【図３】本発明の他の実施形態に係わる太陽電池素子の
素子構造断面図である。FIG. 3 is a cross-sectional view of an element structure of a solar cell element according to another embodiment of the present invention.
【図４】本発明のさらに別の実施形態に係わる太陽電池
素子の素子構造断面図である。FIG. 4 is a cross-sectional view of an element structure of a solar cell element according to still another embodiment of the present invention.
【図５】本発明太陽電池モジュールのモジュール構造断
面図である。FIG. 5 is a sectional view of the module structure of the solar cell module of the present invention.
【図６】本発明太陽電池モジュールを用いた太陽光発電
システムの側面図である。FIG. 6 is a side view of a solar power generation system using the solar cell module of the present invention.
【図７】本発明の他の実施形態に係わる太陽電池モジュ
ールのモジュール構造断面図である。FIG. 7 is a sectional view of a module structure of a solar cell module according to another embodiment of the present invention.
【図８】従来の太陽電池素子の素子構造断面図である。FIG. 8 is a cross-sectional view of an element structure of a conventional solar cell element.
【符号の従明】１…単結晶シリコン基板、２…ｎ型層、
３…反射防止膜、４…受光面電極 ５…ｐ型層、６…透光性導電膜、７…集電極 １１…単結晶シリクン基板、１２，１６…ｉ型非晶質シ
リコン層、１３…ｐ型非晶質シリコン層、１４…透光性
導電膜、１５…受光面電極 １７…ｎ型非晶質シリコン層、１８…透光性導電膜、１
９…集電極 ２１…太陽電池素子、２２…接続体、２３…透光性部
材、２４…背面部材 ２５…透光性充填材 １０１…単結晶シリコン基板、１０２…ｎ型層、１０３
…反射防止膜 １０４…受光面電極、１０５…ｐ型層、１０６…背面電
極[Sign Observation] 1 ... single-crystal silicon substrate, 2 ... n-type layer,
DESCRIPTION OF SYMBOLS 3 ... Anti-reflective film, 4 ... Light-receiving surface electrode 5 ... P-type layer, 6 ... Transparent conductive film, 7 ... Collecting electrode 11 ... Single-crystal silicon substrate, 12, 16 ... i-type amorphous silicon layer, 13 ... p-type amorphous silicon layer, 14: light-transmitting conductive film, 15: light-receiving surface electrode 17: n-type amorphous silicon layer, 18: light-transmitting conductive film, 1
DESCRIPTION OF SYMBOLS 9 ... Collector electrode 21 ... Solar cell element, 22 ... Connection body, 23 ... Translucent member, 24 ... Back member 25 ... Translucent filler 101 ... Single crystal silicon substrate, 102 ... N-type layer, 103
... Antireflection film 104... Light receiving surface electrode 105... P-type layer 106.
Claims (14)
であって、前記結晶系半導体の背面に、透光性導電膜を
備えたことを特徴とする太陽電池素子。1. A solar cell device comprising a crystalline semiconductor, wherein a transparent conductive film is provided on the back surface of the crystalline semiconductor.
ことを特徴とする請求項１記載の太陽電池素子。2. The solar cell element according to claim 1, wherein a collector electrode is provided on the translucent conductive film.
共に、該結晶系半導体と前記背面電極との間に、前記結
晶系半導体と同導電型の不純物が高濃度にドープされた
不純物層を備えたことを特徴とする請求項１または２記
載の太陽電池素子。3. The method according to claim 1, wherein the crystalline semiconductor has one conductivity type, and an impurity layer doped with an impurity of the same conductivity type as the crystalline semiconductor at a high concentration is provided between the crystalline semiconductor and the back electrode. The solar cell element according to claim 1, wherein the solar cell element is provided.
ことを特徴とする請求項３記載の太陽電池素子。4. The solar cell device according to claim 3, wherein said impurity layer is made of an amorphous semiconductor.
（ｄ）との積（ｎｄ）が、４２００〜５４００Åの範囲
にあることを特徴とする請求項１乃至４記載の太陽電池
素子。5. The light-transmitting conductive film according to claim 1, wherein a product (nd) of a refractive index (n) and a film thickness (d) is in a range of 4200 to 5400 °. Solar cell element.
背面部材との間に挟持されてなる太陽電池モジュールで
あって、前記太陽電池素子の背面電極が透光性を有する
ことを特徴とする太陽電池モジュール。6. A solar cell module in which a plurality of solar cell elements are sandwiched between a translucent member and a back member, wherein the back electrode of the solar cell element has translucency. Characteristic solar cell module.
極と、からなることを特徴とする請求項６記載の太陽電
池モジュール。7. The solar cell module according to claim 6, wherein the back electrode comprises a translucent conductive film and a collecting electrode.
徴とする請求項６または７記載の太陽電池モジュール。8. The solar cell module according to claim 6, wherein said back member has translucency.
（ｄ）との積（ｎｄ）が、１４００〜２４００Åの範囲
にあることを特徴とする請求項８記載の太陽電池素子。9. The solar cell according to claim 8, wherein a product (nd) of a refractive index (n) and a film thickness (d) of the light-transmitting conductive film is in a range of 1400 to 2400 °. element.
間に、反射膜を備えたことを特徴とする請求項６または
７記載の太陽電池モジュール。10. The solar cell module according to claim 6, wherein a reflection film is provided between the solar cell element and the back member.
間に透光性充填層を備えたことを特徴とする請求項１０
記載の太陽電池モジュール。11. A light-transmitting filling layer is provided between the solar cell element and the reflection film.
The solar cell module as described.
とを特徴とする請求項１０または１１記載の太陽電池モ
ジュール。12. The solar cell module according to claim 10, wherein the reflection film is made of a white resin.
らなることを特徴とする請求項６または７記載の太陽電
池モジュール。13. The solar cell module according to claim 6, wherein said back member is made of a material having reflectivity.
厚（ｄ）との積（ｎｄ）が、２６００〜３６００Åの範
囲にあることを特徴とする請求項１０乃至１３記載の太
陽電池モジュール。14. The light-transmitting conductive material according to claim 10, wherein a product (nd) of a refractive index (n) and a film thickness (d) is in a range of 2600 to 3600 °. Solar cell module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29070796A JP3469729B2 (en) | 1996-10-31 | 1996-10-31 | Solar cell element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29070796A JP3469729B2 (en) | 1996-10-31 | 1996-10-31 | Solar cell element |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002353538A Division JP2003197943A (en) | 2002-12-05 | 2002-12-05 | Solar cell device and solar cell module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10135497A true JPH10135497A (en) | 1998-05-22 |
| JP3469729B2 JP3469729B2 (en) | 2003-11-25 |
Family
ID=17759483
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29070796A Expired - Fee Related JP3469729B2 (en) | 1996-10-31 | 1996-10-31 | Solar cell element |
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